KR900015357A - 절연 게이트 트랜지스터용 mos 파일럿 구조체 - Google Patents
절연 게이트 트랜지스터용 mos 파일럿 구조체Info
- Publication number
- KR900015357A KR900015357A KR1019900004075A KR900004075A KR900015357A KR 900015357 A KR900015357 A KR 900015357A KR 1019900004075 A KR1019900004075 A KR 1019900004075A KR 900004075 A KR900004075 A KR 900004075A KR 900015357 A KR900015357 A KR 900015357A
- Authority
- KR
- South Korea
- Prior art keywords
- mos
- insulated gate
- gate transistor
- pilot structure
- pilot
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors having potential barriers
- H01L29/94—Metal-insulator-semiconductors, e.g. MOS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Thyristors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US329034 | 1989-03-27 | ||
| US07/329,034 US4980740A (en) | 1989-03-27 | 1989-03-27 | MOS-pilot structure for an insulated gate transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR900015357A true KR900015357A (ko) | 1990-10-26 |
| KR0155991B1 KR0155991B1 (ko) | 1998-10-15 |
Family
ID=23283585
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019900004075A KR0155991B1 (ko) | 1989-03-27 | 1990-03-27 | 절연 게이트 트랜지스터용 mos 파일럿 구조체 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4980740A (ko) |
| EP (1) | EP0390485B1 (ko) |
| JP (1) | JP3154480B2 (ko) |
| KR (1) | KR0155991B1 (ko) |
| DE (1) | DE69021915T2 (ko) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2833610B2 (ja) * | 1991-10-01 | 1998-12-09 | 株式会社デンソー | 絶縁ゲート型バイポーラトランジスタ |
| GB9207849D0 (en) * | 1992-04-09 | 1992-05-27 | Philips Electronics Uk Ltd | A semiconductor device |
| JPH06169089A (ja) * | 1992-05-07 | 1994-06-14 | Nec Corp | 縦型ｍｏｓｆｅｔの製造方法 |
| GB9222455D0 (en) * | 1992-10-26 | 1992-12-09 | Philips Electronics Uk Ltd | A current sensing circuit |
| DE4315178A1 (de) * | 1993-05-07 | 1994-11-10 | Abb Management Ag | IGBT mit selbstjustierender Kathodenstruktur sowie Verfahren zu dessen Herstellung |
| EP0704889A3 (de) | 1994-09-29 | 1998-10-21 | Siemens Aktiengesellschaft | Leistungshalbleiterbauelement mit monolithisch integriertem Messwiderstand und Verfahren zu dessen Herstellung |
| DE19500588A1 (de) * | 1995-01-11 | 1996-07-18 | Abb Management Ag | Bipolartransistor mit isolierter Steuerelektrode (IGBT) und dreidimensionaler MOS Struktur |
| KR100206555B1 (ko) * | 1995-12-30 | 1999-07-01 | 윤종용 | 전력용 트랜지스터 |
| US6180966B1 (en) | 1997-03-25 | 2001-01-30 | Hitachi, Ltd. | Trench gate type semiconductor device with current sensing cell |
| KR100256109B1 (ko) * | 1997-05-07 | 2000-05-01 | 김덕중 | 전력 반도체 장치 |
| US6121089A (en) * | 1997-10-17 | 2000-09-19 | Intersil Corporation | Methods of forming power semiconductor devices having merged split-well body regions therein |
| AU2001238081A1 (en) * | 2000-02-10 | 2001-08-20 | International Rectifier Corporation | Vertical conduction flip-chip device with bump contacts on single surface |
| DE102009028049B3 (de) * | 2009-07-28 | 2011-02-24 | Infineon Technologies Ag | Leistungshalbleiterbauelement mit Potenzialsonde, Leistungshalbleiteranordnung mit einem eine Potenzialsonde aufweisenden Leistungshalbleiterbauelement und Verfahren zum Betrieb eines Leistungshalbleiterbauelements mit einer Potenzialsonde |
| CN113097300A (zh) * | 2019-12-23 | 2021-07-09 | 华润微电子（重庆）有限公司 | 一种功率器件及其制作方法 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4705759B1 (en) * | 1978-10-13 | 1995-02-14 | Int Rectifier Corp | High power mosfet with low on-resistance and high breakdown voltage |
| US4816892A (en) * | 1982-02-03 | 1989-03-28 | General Electric Company | Semiconductor device having turn-on and turn-off capabilities |
| US4811072A (en) * | 1982-09-24 | 1989-03-07 | Risberg Robert L | Semiconductor device |
| IE55753B1 (en) * | 1983-09-06 | 1991-01-02 | Gen Electric | Power semiconductor device with main current section and emulation current section |
| JP2552880B2 (ja) * | 1986-11-12 | 1996-11-13 | シリコニックス・インコーポレイテッド | 垂直ｄｍｏｓセル構造 |
| JP2511018B2 (ja) * | 1987-02-26 | 1996-06-26 | 株式会社東芝 | 絶縁ゲ−ト型サイリスタの電極配線構造 |
| JP2513665B2 (ja) * | 1987-02-26 | 1996-07-03 | 株式会社東芝 | 絶縁ゲ−ト型サイリスタ |
| US4823176A (en) * | 1987-04-03 | 1989-04-18 | General Electric Company | Vertical double diffused metal oxide semiconductor (VDMOS) device including high voltage junction exhibiting increased safe operating area |
| US4857977A (en) * | 1987-08-24 | 1989-08-15 | General Electric Comapny | Lateral metal-oxide-semiconductor controlled triacs |
| JPH0777262B2 (ja) * | 1988-04-19 | 1995-08-16 | 日本電気株式会社 | 縦型電界効果トランジスタ |
-
1989
- 1989-03-27 US US07/329,034 patent/US4980740A/en not_active Expired - Lifetime
-
1990
- 1990-03-27 KR KR1019900004075A patent/KR0155991B1/ko not_active IP Right Cessation
- 1990-03-27 DE DE69021915T patent/DE69021915T2/de not_active Expired - Fee Related
- 1990-03-27 JP JP07578290A patent/JP3154480B2/ja not_active Expired - Fee Related
- 1990-03-27 EP EP90303234A patent/EP0390485B1/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| KR0155991B1 (ko) | 1998-10-15 |
| EP0390485A2 (en) | 1990-10-03 |
| EP0390485B1 (en) | 1995-08-30 |
| DE69021915T2 (de) | 1996-04-25 |
| US4980740A (en) | 1990-12-25 |
| JPH0316268A (ja) | 1991-01-24 |
| EP0390485A3 (en) | 1991-04-24 |
| JP3154480B2 (ja) | 2001-04-09 |
| DE69021915D1 (de) | 1995-10-05 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant | ||
| FPAY | Annual fee payment |
Payment date: 20010714 Year of fee payment: 4 |
|
| LAPS | Lapse due to unpaid annual fee |