KR900011035A - Ccd형 이미지 센서 - Google Patents

Ccd형 이미지 센서

Info

Publication number
KR900011035A
KR900011035A KR1019880018211A KR880018211A KR900011035A KR 900011035 A KR900011035 A KR 900011035A KR 1019880018211 A KR1019880018211 A KR 1019880018211A KR 880018211 A KR880018211 A KR 880018211A KR 900011035 A KR900011035 A KR 900011035A
Authority
KR
South Korea
Prior art keywords
image sensor
type image
ccd type
ccd
sensor
Prior art date
Application number
KR1019880018211A
Other languages
English (en)
Other versions
KR920001398B1 (ko
Inventor
이정형
Original Assignee
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 삼성전자 주식회사 filed Critical 삼성전자 주식회사
Priority to KR1019880018211A priority Critical patent/KR920001398B1/ko
Priority to JP1339912A priority patent/JPH02276277A/ja
Publication of KR900011035A publication Critical patent/KR900011035A/ko
Application granted granted Critical
Publication of KR920001398B1 publication Critical patent/KR920001398B1/ko

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/148Charge coupled imagers

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Electromagnetism (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
KR1019880018211A 1988-12-31 1988-12-31 Ccd형 이미지 센서 KR920001398B1 (ko)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1019880018211A KR920001398B1 (ko) 1988-12-31 1988-12-31 Ccd형 이미지 센서
JP1339912A JPH02276277A (ja) 1988-12-31 1989-12-27 Ccd型イメージセンサー

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019880018211A KR920001398B1 (ko) 1988-12-31 1988-12-31 Ccd형 이미지 센서

Publications (2)

Publication Number Publication Date
KR900011035A true KR900011035A (ko) 1990-07-11
KR920001398B1 KR920001398B1 (ko) 1992-02-13

Family

ID=19281218

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019880018211A KR920001398B1 (ko) 1988-12-31 1988-12-31 Ccd형 이미지 센서

Country Status (2)

Country Link
JP (1) JPH02276277A (ko)
KR (1) KR920001398B1 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100840990B1 (ko) * 2006-07-10 2008-06-24 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 반도체 디바이스 및 그것의 제조 방법

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS597226B2 (ja) * 1976-05-27 1984-02-17 日本電気株式会社 電荷結合素子への電荷注入法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100840990B1 (ko) * 2006-07-10 2008-06-24 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 반도체 디바이스 및 그것의 제조 방법

Also Published As

Publication number Publication date
KR920001398B1 (ko) 1992-02-13
JPH02276277A (ja) 1990-11-13

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Legal Events

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A201 Request for examination
E902 Notification of reason for refusal
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
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FPAY Annual fee payment

Payment date: 20080201

Year of fee payment: 17

EXPY Expiration of term