KR900011035A - Ccd형 이미지 센서 - Google Patents
Ccd형 이미지 센서Info
- Publication number
- KR900011035A KR900011035A KR1019880018211A KR880018211A KR900011035A KR 900011035 A KR900011035 A KR 900011035A KR 1019880018211 A KR1019880018211 A KR 1019880018211A KR 880018211 A KR880018211 A KR 880018211A KR 900011035 A KR900011035 A KR 900011035A
- Authority
- KR
- South Korea
- Prior art keywords
- image sensor
- type image
- ccd type
- ccd
- sensor
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Electromagnetism (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019880018211A KR920001398B1 (ko) | 1988-12-31 | 1988-12-31 | Ccd형 이미지 센서 |
JP1339912A JPH02276277A (ja) | 1988-12-31 | 1989-12-27 | Ccd型イメージセンサー |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019880018211A KR920001398B1 (ko) | 1988-12-31 | 1988-12-31 | Ccd형 이미지 센서 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR900011035A true KR900011035A (ko) | 1990-07-11 |
KR920001398B1 KR920001398B1 (ko) | 1992-02-13 |
Family
ID=19281218
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019880018211A KR920001398B1 (ko) | 1988-12-31 | 1988-12-31 | Ccd형 이미지 센서 |
Country Status (2)
Country | Link |
---|---|
JP (1) | JPH02276277A (ko) |
KR (1) | KR920001398B1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100840990B1 (ko) * | 2006-07-10 | 2008-06-24 | 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 | 반도체 디바이스 및 그것의 제조 방법 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS597226B2 (ja) * | 1976-05-27 | 1984-02-17 | 日本電気株式会社 | 電荷結合素子への電荷注入法 |
-
1988
- 1988-12-31 KR KR1019880018211A patent/KR920001398B1/ko not_active IP Right Cessation
-
1989
- 1989-12-27 JP JP1339912A patent/JPH02276277A/ja active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100840990B1 (ko) * | 2006-07-10 | 2008-06-24 | 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 | 반도체 디바이스 및 그것의 제조 방법 |
Also Published As
Publication number | Publication date |
---|---|
KR920001398B1 (ko) | 1992-02-13 |
JPH02276277A (ja) | 1990-11-13 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
G160 | Decision to publish patent application | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20080201 Year of fee payment: 17 |
|
EXPY | Expiration of term |