KR900007129A - 비정질 실리콘 태양전지의 제조방법 - Google Patents

비정질 실리콘 태양전지의 제조방법

Info

Publication number
KR900007129A
KR900007129A KR1019880014032A KR880014032A KR900007129A KR 900007129 A KR900007129 A KR 900007129A KR 1019880014032 A KR1019880014032 A KR 1019880014032A KR 880014032 A KR880014032 A KR 880014032A KR 900007129 A KR900007129 A KR 900007129A
Authority
KR
South Korea
Prior art keywords
manufacturing
solar cell
amorphous silicon
silicon solar
amorphous
Prior art date
Application number
KR1019880014032A
Other languages
English (en)
Other versions
KR910007465B1 (ko
Inventor
김강원
Original Assignee
삼성전관 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 삼성전관 주식회사 filed Critical 삼성전관 주식회사
Priority to KR1019880014032A priority Critical patent/KR910007465B1/ko
Priority to US07/427,192 priority patent/US5034333A/en
Priority to JP1281573A priority patent/JPH031578A/ja
Publication of KR900007129A publication Critical patent/KR900007129A/ko
Application granted granted Critical
Publication of KR910007465B1 publication Critical patent/KR910007465B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H01L31/022475—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of indium tin oxide [ITO]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0376—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors
    • H01L31/03762—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors including only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)
KR1019880014032A 1988-10-27 1988-10-27 비정질 실리콘 태양전지의 제조방법 KR910007465B1 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1019880014032A KR910007465B1 (ko) 1988-10-27 1988-10-27 비정질 실리콘 태양전지의 제조방법
US07/427,192 US5034333A (en) 1988-10-27 1989-10-26 Method of manufacturing an amorphous silicon solar cell
JP1281573A JPH031578A (ja) 1988-10-27 1989-10-27 アモルファスシリコン太陽電池の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019880014032A KR910007465B1 (ko) 1988-10-27 1988-10-27 비정질 실리콘 태양전지의 제조방법

Publications (2)

Publication Number Publication Date
KR900007129A true KR900007129A (ko) 1990-05-09
KR910007465B1 KR910007465B1 (ko) 1991-09-26

Family

ID=19278804

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019880014032A KR910007465B1 (ko) 1988-10-27 1988-10-27 비정질 실리콘 태양전지의 제조방법

Country Status (3)

Country Link
US (1) US5034333A (ko)
JP (1) JPH031578A (ko)
KR (1) KR910007465B1 (ko)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3262232B2 (ja) * 1990-09-25 2002-03-04 株式会社半導体エネルギー研究所 半導体装置の作製方法
US5256887A (en) * 1991-07-19 1993-10-26 Solarex Corporation Photovoltaic device including a boron doping profile in an i-type layer
US5256576A (en) * 1992-02-14 1993-10-26 United Solar Systems Corporation Method of making pin junction semiconductor device with RF deposited intrinsic buffer layer
US5298086A (en) * 1992-05-15 1994-03-29 United Solar Systems Corporation Method for the manufacture of improved efficiency tandem photovoltaic device and device manufactured thereby
US5476798A (en) * 1992-06-29 1995-12-19 United Solar Systems Corporation Plasma deposition process with substrate temperature control
JP2984537B2 (ja) * 1994-03-25 1999-11-29 キヤノン株式会社 光起電力素子
US6468829B2 (en) 2000-05-16 2002-10-22 United Solar Systems Corporation Method for manufacturing high efficiency photovoltaic devices at enhanced depositions rates
JP2001332749A (ja) * 2000-05-23 2001-11-30 Canon Inc 半導体薄膜の形成方法およびアモルファスシリコン太陽電池素子
WO2007026480A1 (ja) * 2005-08-30 2007-03-08 Kaneka Corporation シリコン系薄膜光電変換装置、及びその製造方法
WO2008046058A2 (en) * 2006-10-12 2008-04-17 Cambrios Technologies Corporation Nanowire-based transparent conductors and applications thereof
CN101355109A (zh) * 2007-07-26 2009-01-28 鸿富锦精密工业（深圳）有限公司 太阳能电池组件及其制造设备
US20100147369A1 (en) * 2008-12-12 2010-06-17 Chien-Min Sung Solar cell having nanodiamond quantum wells
CN103238219A (zh) * 2010-11-16 2013-08-07 东电电子太阳能股份公司 用于a-Si单结和多结薄膜硅太阳能电池的改进的a-Si:H吸收层

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5815231A (ja) * 1981-07-20 1983-01-28 Matsushita Electric Ind Co Ltd 非晶質半導体の製造方法
JPS59107574A (ja) * 1982-12-13 1984-06-21 Agency Of Ind Science & Technol アモルフアスシリコン太陽電池の製造方法
JPS60192374A (ja) * 1984-03-13 1985-09-30 Sanyo Electric Co Ltd 光起電力装置の製造方法
JPS6193675A (ja) * 1984-10-12 1986-05-12 Sanyo Electric Co Ltd 光起電力装置の製造方法
JPS61160979A (ja) * 1985-01-08 1986-07-21 Sharp Corp 非晶質太陽電池の製造方法
JPS62101083A (ja) * 1985-10-28 1987-05-11 Kanegafuchi Chem Ind Co Ltd 半導体装置の製造方法
JPH0799776B2 (ja) * 1986-02-14 1995-10-25 住友電気工業株式会社 アモルフアスシリコン太陽電池の製造方法

Also Published As

Publication number Publication date
KR910007465B1 (ko) 1991-09-26
JPH031578A (ja) 1991-01-08
US5034333A (en) 1991-07-23

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