KR900006817A - Resist composition - Google Patents
Resist compositionInfo
- Publication number
- KR900006817A KR900006817A KR1019890014661A KR890014661A KR900006817A KR 900006817 A KR900006817 A KR 900006817A KR 1019890014661 A KR1019890014661 A KR 1019890014661A KR 890014661 A KR890014661 A KR 890014661A KR 900006817 A KR900006817 A KR 900006817A
- Authority
- KR
- South Korea
- Prior art keywords
- resist composition
- resist
- composition
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Materials For Photolithography (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63258937A JP2715480B2 (en) | 1988-10-13 | 1988-10-13 | Composition for positive resist |
JP258937/1988 | 1988-10-13 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR900006817A true KR900006817A (en) | 1990-05-08 |
KR0159500B1 KR0159500B1 (en) | 1998-12-15 |
Family
ID=17327114
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019890014661A KR0159500B1 (en) | 1988-10-13 | 1989-10-13 | Resist composition |
Country Status (6)
Country | Link |
---|---|
US (1) | US5378586A (en) |
EP (1) | EP0363978A3 (en) |
JP (1) | JP2715480B2 (en) |
KR (1) | KR0159500B1 (en) |
CA (1) | CA2000552A1 (en) |
MX (1) | MX170146B (en) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2761786B2 (en) * | 1990-02-01 | 1998-06-04 | 富士写真フイルム株式会社 | Positive photoresist composition |
JP3070116B2 (en) * | 1991-03-25 | 2000-07-24 | 住友化学工業株式会社 | Polyhydric phenol compound and positive resist composition using the same |
JP2976597B2 (en) * | 1991-04-17 | 1999-11-10 | 住友化学工業株式会社 | Method for producing quinonediazidesulfonic acid ester |
JP3094652B2 (en) * | 1992-05-18 | 2000-10-03 | 住友化学工業株式会社 | Positive resist composition |
KR100277365B1 (en) * | 1992-11-11 | 2001-09-17 | 고사이 아끼오 | Positive type resist composition |
US5609982A (en) * | 1993-12-17 | 1997-03-11 | Fuji Photo Film Co., Ltd. | Positive-working photoresist composition |
US5700620A (en) * | 1993-12-24 | 1997-12-23 | Fuji Photo Film Co., Ltd. | Radiation ray sensitive resin compostion containing at least two different naphthoquinonediazide sulfonic acid esters and an alkali-soluble low-molecular compound |
DE69519455T2 (en) | 1994-08-05 | 2001-06-28 | Sumitomo Chemical Co | Quinonediazide sulfonic acid esters and positive working photoresist compositions containing them |
JP3278306B2 (en) | 1994-10-31 | 2002-04-30 | 富士写真フイルム株式会社 | Positive photoresist composition |
US5541033A (en) * | 1995-02-01 | 1996-07-30 | Ocg Microelectronic Materials, Inc. | Selected o-quinonediazide sulfonic acid esters of phenolic compounds and their use in radiation-sensitive compositions |
US5821345A (en) * | 1996-03-12 | 1998-10-13 | Shipley Company, L.L.C. | Thermodynamically stable photoactive compound |
US5919597A (en) * | 1997-10-30 | 1999-07-06 | Ibm Corporation Of Armonk | Methods for preparing photoresist compositions |
KR100323831B1 (en) * | 1999-03-30 | 2002-02-07 | 윤종용 | Photoresist composition, preparation method thereof and method for forming pattern in semiconductor processing using the same |
KR102060012B1 (en) * | 2013-02-15 | 2019-12-30 | 삼성디스플레이 주식회사 | Photosensitive resin composition and method of forming pattern using the same |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2767092A (en) * | 1951-12-06 | 1956-10-16 | Azoplate Corp | Light sensitive material for lithographic printing |
DE938233C (en) * | 1953-03-11 | 1956-01-26 | Kalle & Co Ag | Photosensitive material for the photomechanical production of printing forms |
NL130248C (en) * | 1959-01-21 | |||
US4059449A (en) * | 1976-09-30 | 1977-11-22 | Rca Corporation | Photoresist containing a thiodipropionate compound |
DE3100077A1 (en) * | 1981-01-03 | 1982-08-05 | Hoechst Ag, 6000 Frankfurt | LIGHT SENSITIVE MIXTURE CONTAINING A NAPHTHOCHINONDIAZIDESULPHONIC ACID ESTER, AND METHOD FOR PRODUCING THE NAPHTHOCHINONDIAZIDESULPHONIC ACID ESTER |
JPS58150948A (en) * | 1982-03-03 | 1983-09-07 | Dainippon Ink & Chem Inc | Photosensitive composition |
US4439516A (en) * | 1982-03-15 | 1984-03-27 | Shipley Company Inc. | High temperature positive diazo photoresist processing using polyvinyl phenol |
US4499171A (en) * | 1982-04-20 | 1985-02-12 | Japan Synthetic Rubber Co., Ltd. | Positive type photosensitive resin composition with at least two o-quinone diazides |
JPS59165053A (en) * | 1983-03-11 | 1984-09-18 | Japan Synthetic Rubber Co Ltd | Positive type photosensitive resin composition |
JPS60121445A (en) * | 1983-12-06 | 1985-06-28 | Japan Synthetic Rubber Co Ltd | Positive type photosensitive resin composition |
JPS61185741A (en) * | 1985-02-13 | 1986-08-19 | Mitsubishi Chem Ind Ltd | Positive type photoresist composition |
US4588670A (en) * | 1985-02-28 | 1986-05-13 | American Hoechst Corporation | Light-sensitive trisester of O-quinone diazide containing composition for the preparation of a positive-acting photoresist |
JPS61257525A (en) * | 1985-05-10 | 1986-11-15 | Mitsubishi Heavy Ind Ltd | Floating oil-preventive dam device |
JP2568827B2 (en) * | 1986-10-29 | 1997-01-08 | 富士写真フイルム株式会社 | Positive photoresist composition |
JPS63249152A (en) * | 1987-04-06 | 1988-10-17 | Canon Inc | Electrophotographic sensitive body |
US4837121A (en) * | 1987-11-23 | 1989-06-06 | Olin Hunt Specialty Products Inc. | Thermally stable light-sensitive compositions with o-quinone diazide and phenolic resin |
DE3842896C2 (en) * | 1988-04-22 | 1998-07-02 | Tokyo Ohka Kogyo Co Ltd | Positive working photosensitive composition |
JPH01283556A (en) * | 1988-05-11 | 1989-11-15 | Chisso Corp | Positive type photoresist composition |
DE68927140T2 (en) * | 1988-06-13 | 1997-04-30 | Sumitomo Chemical Co | Photoresist composition |
JP2800186B2 (en) * | 1988-07-07 | 1998-09-21 | 住友化学工業株式会社 | Method for producing positive resist composition for producing integrated circuits |
US4959292A (en) * | 1988-07-11 | 1990-09-25 | Olin Hunt Specialty Products Inc. | Light-sensitive o-quinone diazide composition and product with phenolic novolak prepared by condensation with haloacetoaldehyde |
JP2636348B2 (en) * | 1988-07-20 | 1997-07-30 | 住友化学工業株式会社 | Composition for positive resist |
US4943511A (en) * | 1988-08-05 | 1990-07-24 | Morton Thiokol, Inc. | High sensitivity mid and deep UV resist |
-
1988
- 1988-10-13 JP JP63258937A patent/JP2715480B2/en not_active Expired - Fee Related
-
1989
- 1989-10-11 MX MX017936A patent/MX170146B/en unknown
- 1989-10-12 CA CA002000552A patent/CA2000552A1/en not_active Abandoned
- 1989-10-13 EP EP19890119055 patent/EP0363978A3/en not_active Withdrawn
- 1989-10-13 KR KR1019890014661A patent/KR0159500B1/en not_active IP Right Cessation
-
1993
- 1993-11-16 US US08/152,891 patent/US5378586A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
KR0159500B1 (en) | 1998-12-15 |
MX170146B (en) | 1993-08-09 |
JP2715480B2 (en) | 1998-02-18 |
US5378586A (en) | 1995-01-03 |
EP0363978A2 (en) | 1990-04-18 |
CA2000552A1 (en) | 1990-04-13 |
EP0363978A3 (en) | 1991-06-05 |
JPH02103543A (en) | 1990-04-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20120727 Year of fee payment: 15 |
|
EXPY | Expiration of term |