KR900006817A - Resist composition - Google Patents

Resist composition

Info

Publication number
KR900006817A
KR900006817A KR1019890014661A KR890014661A KR900006817A KR 900006817 A KR900006817 A KR 900006817A KR 1019890014661 A KR1019890014661 A KR 1019890014661A KR 890014661 A KR890014661 A KR 890014661A KR 900006817 A KR900006817 A KR 900006817A
Authority
KR
South Korea
Prior art keywords
resist composition
resist
composition
Prior art date
Application number
KR1019890014661A
Other languages
Korean (ko)
Other versions
KR0159500B1 (en
Inventor
야스노리 우에따니
마꼬또 하나바따
히로또시 나까니시
고지 구와나
후미오 오이
Original Assignee
스미또모 가가꾸 고오교 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 스미또모 가가꾸 고오교 가부시끼가이샤 filed Critical 스미또모 가가꾸 고오교 가부시끼가이샤
Publication of KR900006817A publication Critical patent/KR900006817A/en
Application granted granted Critical
Publication of KR0159500B1 publication Critical patent/KR0159500B1/en

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/022Quinonediazides
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/022Quinonediazides
    • G03F7/0226Quinonediazides characterised by the non-macromolecular additives

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Materials For Photolithography (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
KR1019890014661A 1988-10-13 1989-10-13 Resist composition KR0159500B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP63258937A JP2715480B2 (en) 1988-10-13 1988-10-13 Composition for positive resist
JP258937/1988 1988-10-13

Publications (2)

Publication Number Publication Date
KR900006817A true KR900006817A (en) 1990-05-08
KR0159500B1 KR0159500B1 (en) 1998-12-15

Family

ID=17327114

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890014661A KR0159500B1 (en) 1988-10-13 1989-10-13 Resist composition

Country Status (6)

Country Link
US (1) US5378586A (en)
EP (1) EP0363978A3 (en)
JP (1) JP2715480B2 (en)
KR (1) KR0159500B1 (en)
CA (1) CA2000552A1 (en)
MX (1) MX170146B (en)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2761786B2 (en) * 1990-02-01 1998-06-04 富士写真フイルム株式会社 Positive photoresist composition
JP3070116B2 (en) * 1991-03-25 2000-07-24 住友化学工業株式会社 Polyhydric phenol compound and positive resist composition using the same
JP2976597B2 (en) * 1991-04-17 1999-11-10 住友化学工業株式会社 Method for producing quinonediazidesulfonic acid ester
JP3094652B2 (en) * 1992-05-18 2000-10-03 住友化学工業株式会社 Positive resist composition
KR100277365B1 (en) * 1992-11-11 2001-09-17 고사이 아끼오 Positive type resist composition
US5609982A (en) * 1993-12-17 1997-03-11 Fuji Photo Film Co., Ltd. Positive-working photoresist composition
US5700620A (en) * 1993-12-24 1997-12-23 Fuji Photo Film Co., Ltd. Radiation ray sensitive resin compostion containing at least two different naphthoquinonediazide sulfonic acid esters and an alkali-soluble low-molecular compound
DE69519455T2 (en) 1994-08-05 2001-06-28 Sumitomo Chemical Co Quinonediazide sulfonic acid esters and positive working photoresist compositions containing them
JP3278306B2 (en) 1994-10-31 2002-04-30 富士写真フイルム株式会社 Positive photoresist composition
US5541033A (en) * 1995-02-01 1996-07-30 Ocg Microelectronic Materials, Inc. Selected o-quinonediazide sulfonic acid esters of phenolic compounds and their use in radiation-sensitive compositions
US5821345A (en) * 1996-03-12 1998-10-13 Shipley Company, L.L.C. Thermodynamically stable photoactive compound
US5919597A (en) * 1997-10-30 1999-07-06 Ibm Corporation Of Armonk Methods for preparing photoresist compositions
KR100323831B1 (en) * 1999-03-30 2002-02-07 윤종용 Photoresist composition, preparation method thereof and method for forming pattern in semiconductor processing using the same
KR102060012B1 (en) * 2013-02-15 2019-12-30 삼성디스플레이 주식회사 Photosensitive resin composition and method of forming pattern using the same

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2767092A (en) * 1951-12-06 1956-10-16 Azoplate Corp Light sensitive material for lithographic printing
DE938233C (en) * 1953-03-11 1956-01-26 Kalle & Co Ag Photosensitive material for the photomechanical production of printing forms
NL130248C (en) * 1959-01-21
US4059449A (en) * 1976-09-30 1977-11-22 Rca Corporation Photoresist containing a thiodipropionate compound
DE3100077A1 (en) * 1981-01-03 1982-08-05 Hoechst Ag, 6000 Frankfurt LIGHT SENSITIVE MIXTURE CONTAINING A NAPHTHOCHINONDIAZIDESULPHONIC ACID ESTER, AND METHOD FOR PRODUCING THE NAPHTHOCHINONDIAZIDESULPHONIC ACID ESTER
JPS58150948A (en) * 1982-03-03 1983-09-07 Dainippon Ink & Chem Inc Photosensitive composition
US4439516A (en) * 1982-03-15 1984-03-27 Shipley Company Inc. High temperature positive diazo photoresist processing using polyvinyl phenol
US4499171A (en) * 1982-04-20 1985-02-12 Japan Synthetic Rubber Co., Ltd. Positive type photosensitive resin composition with at least two o-quinone diazides
JPS59165053A (en) * 1983-03-11 1984-09-18 Japan Synthetic Rubber Co Ltd Positive type photosensitive resin composition
JPS60121445A (en) * 1983-12-06 1985-06-28 Japan Synthetic Rubber Co Ltd Positive type photosensitive resin composition
JPS61185741A (en) * 1985-02-13 1986-08-19 Mitsubishi Chem Ind Ltd Positive type photoresist composition
US4588670A (en) * 1985-02-28 1986-05-13 American Hoechst Corporation Light-sensitive trisester of O-quinone diazide containing composition for the preparation of a positive-acting photoresist
JPS61257525A (en) * 1985-05-10 1986-11-15 Mitsubishi Heavy Ind Ltd Floating oil-preventive dam device
JP2568827B2 (en) * 1986-10-29 1997-01-08 富士写真フイルム株式会社 Positive photoresist composition
JPS63249152A (en) * 1987-04-06 1988-10-17 Canon Inc Electrophotographic sensitive body
US4837121A (en) * 1987-11-23 1989-06-06 Olin Hunt Specialty Products Inc. Thermally stable light-sensitive compositions with o-quinone diazide and phenolic resin
DE3842896C2 (en) * 1988-04-22 1998-07-02 Tokyo Ohka Kogyo Co Ltd Positive working photosensitive composition
JPH01283556A (en) * 1988-05-11 1989-11-15 Chisso Corp Positive type photoresist composition
DE68927140T2 (en) * 1988-06-13 1997-04-30 Sumitomo Chemical Co Photoresist composition
JP2800186B2 (en) * 1988-07-07 1998-09-21 住友化学工業株式会社 Method for producing positive resist composition for producing integrated circuits
US4959292A (en) * 1988-07-11 1990-09-25 Olin Hunt Specialty Products Inc. Light-sensitive o-quinone diazide composition and product with phenolic novolak prepared by condensation with haloacetoaldehyde
JP2636348B2 (en) * 1988-07-20 1997-07-30 住友化学工業株式会社 Composition for positive resist
US4943511A (en) * 1988-08-05 1990-07-24 Morton Thiokol, Inc. High sensitivity mid and deep UV resist

Also Published As

Publication number Publication date
KR0159500B1 (en) 1998-12-15
MX170146B (en) 1993-08-09
JP2715480B2 (en) 1998-02-18
US5378586A (en) 1995-01-03
EP0363978A2 (en) 1990-04-18
CA2000552A1 (en) 1990-04-13
EP0363978A3 (en) 1991-06-05
JPH02103543A (en) 1990-04-16

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Payment date: 20120727

Year of fee payment: 15

EXPY Expiration of term