KR890011018A - 진공장치 - Google Patents
진공장치 Download PDFInfo
- Publication number
- KR890011018A KR890011018A KR1019880017147A KR880017147A KR890011018A KR 890011018 A KR890011018 A KR 890011018A KR 1019880017147 A KR1019880017147 A KR 1019880017147A KR 880017147 A KR880017147 A KR 880017147A KR 890011018 A KR890011018 A KR 890011018A
- Authority
- KR
- South Korea
- Prior art keywords
- vacuum
- working chamber
- prechamber
- sample
- connecting portions
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/18—Vacuum locks ; Means for obtaining or maintaining the desired pressure within the vessel
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S414/00—Material or article handling
- Y10S414/135—Associated with semiconductor wafer handling
- Y10S414/139—Associated with semiconductor wafer handling including wafer charging or discharging means for vacuum chamber
Landscapes
- Engineering & Computer Science (AREA)
- Analytical Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electron Beam Exposure (AREA)
- Sampling And Sample Adjustment (AREA)
- Physical Vapour Deposition (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 1도는 진공워킹챔버와 진공프리챔버를 분리시킨 상태를 나타낸 측면도.
제 2도는 진공워킹챔버와 진공프리챔버를 연결시킨 상태를 나타낸 측면도.
제 3도는 진공프리챔버의 시료공급부에 대한 확대 사시도.
Claims (8)
- 시료(A)에 대해 일정한 프로세스를 수행하는 진공워킹챔버(1)와, 진공상태에서 상기 진공워킹챔버(1)내부의 시료를 교환하는 진공프리챔버(2)로 이루어진 진공장치에 있어서, 상기 진공워킹챔버(1)와 진공프리챔버(2)가 각각 별개로 형성되어 연결 및 분리가 자유롭게 되도록 구성됨과 더불어, 양 챔버(1,2)의 연결부(10,11)나 이 연결부(10,11)의 하단부에는 그 연결부(10,11)를 개폐시키는 게이트밸브(12,13)가 설치된 것을 특징으로 하는 진공장치.
- 제 1 항에 있어서, 상기 진공워킹챔버(1)와 진공프리챔버(2)중 최소한 어느 한쪽을 다른쪽 방향으로 자유롭게 평행이동시켜 양 챔버(1,2)를 연결시키거나 분리시키도록 구성된 것을 특징으로 하는 진공장치.
- 제 1 항에 있어서, 상기 진공워킹챔버(1)와 진공프리챔버(2)중 최소한 한쪽을 다른쪽 방향으로 자유롭게 회전시켜 양 챔버(1,2)를 연결시키거나 분리시키도록 구성된 것을 특징으로 하는 진공장치.
- 제 1 항에 있어서, 상기 진공워킹챔버(1)와 진공프리챔버(2)는 그 연결부(10,11)가 대치.고정되고, 양 연결부(10,11)사이에 게이트밸브(12,13)가 수납된 중간분리체(16)가 자유롭게 끼워져 장착되도록 설치된 것을 특징으로 하는 진공장치.
- 제 1 항 내지 제 4 항중 어느 한항에 있어서, 상기 진공워킹챔버(1)에서의 프로세스는 에너지비임으로 시료(A)에 묘사패턴을 형성시키는 것임을 특징으로 하는 진공장치.
- 제 5 항에 있어서, 상기 에너지비임이 전자선인 것을 특징으로 하는 진공장치.
- 제 1 항 내지 제 4 항중 어느 한항에 있어서, 상기 진공워킹챔버(1)에서의 프로세스는 에너지비임으로 시료(A)를 측정하거나 관찰하는 것임을 특징으로 하는 진공장치.
- 제 7 항에 있어서, 상기 에너지비임이 전자선인 것을 특징으로 하는 진공장치.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62-323334 | 1987-12-21 | ||
JP87-323334 | 1987-12-21 | ||
JP62323334A JPH0668962B2 (ja) | 1987-12-21 | 1987-12-21 | 真空装置及びそれを用いてプロセスを行う方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR890011018A true KR890011018A (ko) | 1989-08-12 |
KR930000598B1 KR930000598B1 (ko) | 1993-01-25 |
Family
ID=18153638
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019880017147A KR930000598B1 (ko) | 1987-12-21 | 1988-12-21 | 진공장치 |
Country Status (3)
Country | Link |
---|---|
US (1) | US4948979A (ko) |
JP (1) | JPH0668962B2 (ko) |
KR (1) | KR930000598B1 (ko) |
Families Citing this family (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2525284B2 (ja) * | 1990-10-22 | 1996-08-14 | ティーディーケイ株式会社 | クリ―ン搬送方法及び装置 |
US5332013A (en) * | 1991-03-15 | 1994-07-26 | Shinko Electric Co., Ltd. | Unmanned conveying device in clean room |
JPH081923B2 (ja) * | 1991-06-24 | 1996-01-10 | ティーディーケイ株式会社 | クリーン搬送方法及び装置 |
US5364225A (en) * | 1992-06-19 | 1994-11-15 | Ibm | Method of printed circuit panel manufacture |
JP2555973B2 (ja) * | 1994-04-08 | 1996-11-20 | 日本電気株式会社 | 超高真空搬送装置 |
DE4425208C2 (de) * | 1994-07-16 | 1996-05-09 | Jenoptik Technologie Gmbh | Einrichtung zur Kopplung von Be- und Entladegeräten mit Halbleiterbearbeitungsmaschinen |
TW499696B (en) * | 1999-04-27 | 2002-08-21 | Tokyo Electron Ltd | Processing apparatus and processing method |
US6414328B1 (en) | 1999-11-05 | 2002-07-02 | Kair Nussupov | Method and apparatus for the conveying and positioning of ion implantation targets |
US6800172B2 (en) * | 2002-02-22 | 2004-10-05 | Micron Technology, Inc. | Interfacial structure for semiconductor substrate processing chambers and substrate transfer chambers and for semiconductor substrate processing chambers and accessory attachments, and semiconductor substrate processor |
US6814813B2 (en) * | 2002-04-24 | 2004-11-09 | Micron Technology, Inc. | Chemical vapor deposition apparatus |
US6858264B2 (en) * | 2002-04-24 | 2005-02-22 | Micron Technology, Inc. | Chemical vapor deposition methods |
US6838114B2 (en) | 2002-05-24 | 2005-01-04 | Micron Technology, Inc. | Methods for controlling gas pulsing in processes for depositing materials onto micro-device workpieces |
US6821347B2 (en) | 2002-07-08 | 2004-11-23 | Micron Technology, Inc. | Apparatus and method for depositing materials onto microelectronic workpieces |
US6955725B2 (en) | 2002-08-15 | 2005-10-18 | Micron Technology, Inc. | Reactors with isolated gas connectors and methods for depositing materials onto micro-device workpieces |
JP4182539B2 (ja) * | 2002-09-30 | 2008-11-19 | 日本精工株式会社 | 位置決め装置 |
US6926775B2 (en) | 2003-02-11 | 2005-08-09 | Micron Technology, Inc. | Reactors with isolated gas connectors and methods for depositing materials onto micro-device workpieces |
US6818249B2 (en) * | 2003-03-03 | 2004-11-16 | Micron Technology, Inc. | Reactors, systems with reaction chambers, and methods for depositing materials onto micro-device workpieces |
US7335396B2 (en) | 2003-04-24 | 2008-02-26 | Micron Technology, Inc. | Methods for controlling mass flow rates and pressures in passageways coupled to reaction chambers and systems for depositing material onto microfeature workpieces in reaction chambers |
US7235138B2 (en) | 2003-08-21 | 2007-06-26 | Micron Technology, Inc. | Microfeature workpiece processing apparatus and methods for batch deposition of materials on microfeature workpieces |
US7344755B2 (en) | 2003-08-21 | 2008-03-18 | Micron Technology, Inc. | Methods and apparatus for processing microfeature workpieces; methods for conditioning ALD reaction chambers |
US7422635B2 (en) | 2003-08-28 | 2008-09-09 | Micron Technology, Inc. | Methods and apparatus for processing microfeature workpieces, e.g., for depositing materials on microfeature workpieces |
US7056806B2 (en) | 2003-09-17 | 2006-06-06 | Micron Technology, Inc. | Microfeature workpiece processing apparatus and methods for controlling deposition of materials on microfeature workpieces |
US7282239B2 (en) | 2003-09-18 | 2007-10-16 | Micron Technology, Inc. | Systems and methods for depositing material onto microfeature workpieces in reaction chambers |
US7323231B2 (en) | 2003-10-09 | 2008-01-29 | Micron Technology, Inc. | Apparatus and methods for plasma vapor deposition processes |
US7581511B2 (en) | 2003-10-10 | 2009-09-01 | Micron Technology, Inc. | Apparatus and methods for manufacturing microfeatures on workpieces using plasma vapor processes |
US7647886B2 (en) | 2003-10-15 | 2010-01-19 | Micron Technology, Inc. | Systems for depositing material onto workpieces in reaction chambers and methods for removing byproducts from reaction chambers |
US7258892B2 (en) | 2003-12-10 | 2007-08-21 | Micron Technology, Inc. | Methods and systems for controlling temperature during microfeature workpiece processing, e.g., CVD deposition |
US7906393B2 (en) | 2004-01-28 | 2011-03-15 | Micron Technology, Inc. | Methods for forming small-scale capacitor structures |
US7584942B2 (en) * | 2004-03-31 | 2009-09-08 | Micron Technology, Inc. | Ampoules for producing a reaction gas and systems for depositing materials onto microfeature workpieces in reaction chambers |
US8133554B2 (en) | 2004-05-06 | 2012-03-13 | Micron Technology, Inc. | Methods for depositing material onto microfeature workpieces in reaction chambers and systems for depositing materials onto microfeature workpieces |
US7699932B2 (en) | 2004-06-02 | 2010-04-20 | Micron Technology, Inc. | Reactors, systems and methods for depositing thin films onto microfeature workpieces |
JP4406666B2 (ja) * | 2008-02-20 | 2010-02-03 | シャープ株式会社 | 真空処理装置および真空処理工場 |
JP4766500B2 (ja) * | 2009-08-26 | 2011-09-07 | シャープ株式会社 | 真空処理装置、および真空処理工場 |
JP5669514B2 (ja) * | 2010-10-14 | 2015-02-12 | キヤノン株式会社 | 処理設備、保守装置、および物品の製造方法 |
JP2017520015A (ja) * | 2014-05-07 | 2017-07-20 | マッパー・リソグラフィー・アイピー・ビー.ブイ. | ターゲット処理マシン用囲い |
DK178352B1 (da) * | 2015-02-27 | 2016-01-04 | Intelligent Systems As | Transport- og lagersystem til servicering af et antal behandlings og plejeområder på et hospital, samt fremgangsmåde til drift heraf. |
USD848830S1 (en) | 2016-02-06 | 2019-05-21 | Harry P. Nouhan, JR. | Box structure |
CN117121160A (zh) * | 2021-03-31 | 2023-11-24 | 邦德科技股份有限公司 | 接合***以及接合方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3761709A (en) * | 1971-03-16 | 1973-09-25 | Jeol Ltd | Method and apparatus for observing biological specimens using a scanning electron microscope |
US3874525A (en) * | 1973-06-29 | 1975-04-01 | Ibm | Method and apparatus for handling workpieces |
US3958124A (en) * | 1973-09-17 | 1976-05-18 | Etec Corporation | Method and apparatus for sem specimen coating and transfer |
JPS5478076A (en) * | 1977-12-05 | 1979-06-21 | Hitachi Ltd | Frozen sample observation device of scanning electron microscope and similar unit |
JPS58167438U (ja) * | 1982-04-30 | 1983-11-08 | 株式会社島津製作所 | 試料導入装置 |
JPS58210161A (ja) * | 1982-05-24 | 1983-12-07 | バリアン・アソシエイツ・インコ−ポレイテツド | 高真空処理のための高速排気システム |
JPS6285840A (ja) * | 1985-10-11 | 1987-04-20 | Kureha Chem Ind Co Ltd | 走査型電子顕微鏡を用いた試料処理方法および装置 |
US4763005A (en) * | 1986-08-06 | 1988-08-09 | Schumer Steven E | Rotating field electron beam apparatus and method |
-
1987
- 1987-12-21 JP JP62323334A patent/JPH0668962B2/ja not_active Expired - Lifetime
-
1988
- 1988-12-21 US US07/287,166 patent/US4948979A/en not_active Expired - Lifetime
- 1988-12-21 KR KR1019880017147A patent/KR930000598B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JPH0668962B2 (ja) | 1994-08-31 |
KR930000598B1 (ko) | 1993-01-25 |
JPH01163951A (ja) | 1989-06-28 |
US4948979A (en) | 1990-08-14 |
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G160 | Decision to publish patent application | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20021231 Year of fee payment: 11 |
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LAPS | Lapse due to unpaid annual fee |