KR880001524A - 다이아몬드의 합성방법 및 장치 - Google Patents
다이아몬드의 합성방법 및 장치Info
- Publication number
- KR880001524A KR880001524A KR1019870008023A KR870008023A KR880001524A KR 880001524 A KR880001524 A KR 880001524A KR 1019870008023 A KR1019870008023 A KR 1019870008023A KR 870008023 A KR870008023 A KR 870008023A KR 880001524 A KR880001524 A KR 880001524A
- Authority
- KR
- South Korea
- Prior art keywords
- synthesizing diamonds
- diamonds
- synthesizing
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/04—Diamond
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61-173366 | 1986-07-23 | ||
JP17336686A JPH0649635B2 (ja) | 1986-07-23 | 1986-07-23 | ダイヤモンドの合成方法 |
JP62-75282 | 1987-03-27 | ||
JP62075282A JPS63241323A (ja) | 1987-03-27 | 1987-03-27 | 表面温度測定方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR880001524A true KR880001524A (ko) | 1988-04-23 |
KR910001359B1 KR910001359B1 (ko) | 1991-03-04 |
Family
ID=26416433
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019870008023A KR910001359B1 (ko) | 1986-07-23 | 1987-07-23 | 다이아몬드의 합성방법 및 장치 |
Country Status (4)
Country | Link |
---|---|
US (1) | US4859490A (ko) |
EP (1) | EP0254312B1 (ko) |
KR (1) | KR910001359B1 (ko) |
DE (1) | DE3766029D1 (ko) |
Families Citing this family (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5270028A (en) * | 1988-02-01 | 1993-12-14 | Sumitomo Electric Industries, Ltd. | Diamond and its preparation by chemical vapor deposition method |
DE68908729T3 (de) * | 1988-02-01 | 1998-02-12 | Sumitomo Electric Industries | Diamant und seine Darstellung durch ein Verfahren mittels Abscheidung aus der Gasphase. |
US5079031A (en) * | 1988-03-22 | 1992-01-07 | Semiconductor Energy Laboratory Co., Ltd. | Apparatus and method for forming thin films |
US5006203A (en) * | 1988-08-12 | 1991-04-09 | Texas Instruments Incorporated | Diamond growth method |
US4958592A (en) * | 1988-08-22 | 1990-09-25 | General Electric Company | Resistance heater for diamond production by CVD |
JPH02199099A (ja) * | 1988-10-21 | 1990-08-07 | Crystallume | 連続ダイヤモンド薄膜およびその製法 |
US5258206A (en) * | 1989-01-13 | 1993-11-02 | Idemitsu Petrochemical Co., Ltd. | Method and apparatus for producing diamond thin films |
US4953499A (en) * | 1989-08-03 | 1990-09-04 | General Electric Company | Apparatus for synthetic diamond deposition including curved filaments and substrate cooling means |
JPH0780718B2 (ja) * | 1989-08-04 | 1995-08-30 | トヨタ自動車株式会社 | ダイヤモンドの合成方法および合成装置 |
US5075094A (en) * | 1990-04-30 | 1991-12-24 | The United States Of America As Represented By The Secretary Of The Navy | Method of growing diamond film on substrates |
DE4029270C1 (ko) * | 1990-09-14 | 1992-04-09 | Balzers Ag, Balzers, Li | |
DE4029268C2 (de) * | 1990-09-14 | 1995-07-06 | Balzers Hochvakuum | Verfahren zur gleichspannungs-bogenentladungs-unterstützten, reaktiven Behandlung von Gut und Vakuumbehandlungsanlage zur Durchführung |
US5147687A (en) * | 1991-05-22 | 1992-09-15 | Diamonex, Inc. | Hot filament CVD of thick, adherent and coherent polycrystalline diamond films |
US5146481A (en) * | 1991-06-25 | 1992-09-08 | Diwakar Garg | Diamond membranes for X-ray lithography |
CA2077773A1 (en) * | 1991-10-25 | 1993-04-26 | Thomas R. Anthony | Microwave, rf, or ac/dc discharge assisted flame deposition of cvd diamond |
EP0549207A1 (en) * | 1991-12-26 | 1993-06-30 | General Electric Company | Diamond films |
EP0549187A1 (en) * | 1991-12-26 | 1993-06-30 | General Electric Company | Diamond films |
US5290610A (en) * | 1992-02-13 | 1994-03-01 | Motorola, Inc. | Forming a diamond material layer on an electron emitter using hydrocarbon reactant gases ionized by emitted electrons |
US5359170A (en) * | 1992-02-18 | 1994-10-25 | At&T Global Information Solutions Company | Apparatus for bonding external leads of an integrated circuit |
JP3041133B2 (ja) * | 1992-06-01 | 2000-05-15 | 松下電器産業株式会社 | イオン化蒸着装置 |
US5439492A (en) * | 1992-06-11 | 1995-08-08 | General Electric Company | Fine grain diamond workpieces |
CA2112308C (en) * | 1993-01-22 | 2000-08-15 | Louis K. Bigelow | Method of making white diamond film |
US5431963A (en) * | 1993-02-01 | 1995-07-11 | General Electric Company | Method for adhering diamondlike carbon to a substrate |
US5909879A (en) * | 1993-03-09 | 1999-06-08 | Norton Company | Diamond film coating for mating parts |
US5441013A (en) * | 1993-03-23 | 1995-08-15 | At&T Bell Laboratories | Method for growing continuous diamond films |
JP2595894B2 (ja) * | 1994-04-26 | 1997-04-02 | 日本電気株式会社 | 水素ラジカル発生装置 |
US5711773A (en) * | 1994-11-17 | 1998-01-27 | Plasmoteg Engineering Center | Abrasive material for precision surface treatment and a method for the manufacturing thereof |
US5976206A (en) * | 1995-05-19 | 1999-11-02 | Saint-Gobain/Norton Industrial Ceramics Corporation | Method of making white diamond film |
US6126793A (en) * | 1995-10-17 | 2000-10-03 | Citizen Watch Co., Ltd. | Method of forming films over inner surface of cylindrical member |
US5776553A (en) * | 1996-02-23 | 1998-07-07 | Saint Gobain/Norton Industrial Ceramics Corp. | Method for depositing diamond films by dielectric barrier discharge |
JP3861346B2 (ja) * | 1996-12-04 | 2006-12-20 | 住友電気工業株式会社 | ダイヤモンド合成方法 |
US6161499A (en) * | 1997-07-07 | 2000-12-19 | Cvd Diamond Corporation | Apparatus and method for nucleation and deposition of diamond using hot-filament DC plasma |
US20080241413A1 (en) * | 2007-03-26 | 2008-10-02 | Ravi Kramadhati V | Plasma tool for forming porous diamond films for semiconductor applications |
GB0813490D0 (en) | 2008-07-23 | 2008-08-27 | Element Six Ltd | Solid state material |
GB0813491D0 (en) | 2008-07-23 | 2008-08-27 | Element Six Ltd | Diamond Material |
BE1019439A3 (fr) * | 2010-07-30 | 2012-07-03 | Diarotech | Procede pour synthetiser par depot chimique en phase vapeur une matiere solide, en particulier du diamant, ainsi qu'un dispositif pour l'application du procede. |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4434188A (en) * | 1981-12-17 | 1984-02-28 | National Institute For Researches In Inorganic Materials | Method for synthesizing diamond |
JPS60122794A (ja) * | 1983-12-01 | 1985-07-01 | Mitsubishi Metal Corp | ダイヤモンドの低圧気相合成法 |
JPS60221395A (ja) * | 1984-04-19 | 1985-11-06 | Yoshio Imai | ダイヤモンド薄膜の製造方法 |
EP0183254B1 (en) * | 1984-11-29 | 1994-07-13 | Matsushita Electric Industrial Co., Ltd. | Plasma CVD apparatus and method for forming a diamond-like carbon film |
JP3196906B2 (ja) * | 1992-08-21 | 2001-08-06 | 富士ゼロックス株式会社 | 画像信号の符号化装置 |
-
1987
- 1987-07-20 US US07/075,470 patent/US4859490A/en not_active Expired - Fee Related
- 1987-07-23 KR KR1019870008023A patent/KR910001359B1/ko not_active IP Right Cessation
- 1987-07-23 DE DE8787110686T patent/DE3766029D1/de not_active Expired - Fee Related
- 1987-07-23 EP EP87110686A patent/EP0254312B1/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US4859490A (en) | 1989-08-22 |
KR910001359B1 (ko) | 1991-03-04 |
EP0254312B1 (en) | 1990-11-07 |
EP0254312A1 (en) | 1988-01-27 |
DE3766029D1 (de) | 1990-12-13 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
G160 | Decision to publish patent application | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 19960302 Year of fee payment: 6 |
|
LAPS | Lapse due to unpaid annual fee |