KR870007576A - 광전 변환장치 및 제조방법 - Google Patents
광전 변환장치 및 제조방법Info
- Publication number
- KR870007576A KR870007576A KR1019870000015A KR870000015A KR870007576A KR 870007576 A KR870007576 A KR 870007576A KR 1019870000015 A KR1019870000015 A KR 1019870000015A KR 870000015 A KR870000015 A KR 870000015A KR 870007576 A KR870007576 A KR 870007576A
- Authority
- KR
- South Korea
- Prior art keywords
- manufacturing
- photoelectric conversion
- conversion device
- photoelectric
- conversion
- Prior art date
Links
- 238000006243 chemical reaction Methods 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14623—Optical shielding
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1007 | 1986-01-06 | ||
JP61001006A JPS62158360A (ja) | 1986-01-06 | 1986-01-06 | 光電変換装置 |
JP61001007A JPS62158361A (ja) | 1986-01-06 | 1986-01-06 | 光電変換装置の作成方法 |
JP1006 | 1986-01-06 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR870007576A true KR870007576A (ko) | 1987-08-20 |
KR900003842B1 KR900003842B1 (ko) | 1990-06-02 |
Family
ID=26334159
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019870000015A KR900003842B1 (ko) | 1986-01-06 | 1987-01-06 | 광전 변환장치 및 제조방법 |
Country Status (5)
Country | Link |
---|---|
US (1) | US4810661A (ko) |
EP (1) | EP0229397B1 (ko) |
KR (1) | KR900003842B1 (ko) |
CN (1) | CN1008783B (ko) |
DE (1) | DE3650363T2 (ko) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0228712B1 (en) * | 1986-01-06 | 1995-08-09 | Sel Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device with a high response speed and method for manufacturing the same |
US5317796A (en) * | 1989-04-18 | 1994-06-07 | Hunter Robert M | Technique for rendering packaging child resistant |
FR2737045B1 (fr) * | 1995-07-21 | 1997-08-29 | Commissariat Energie Atomique | Structure photosensible durcie aux rayonnements electromagnetiques durs et son application aux cameras video |
US20060180198A1 (en) * | 2005-02-16 | 2006-08-17 | Sharp Kabushiki Kaisha | Solar cell, solar cell string and method of manufacturing solar cell string |
JP4290747B2 (ja) * | 2006-06-23 | 2009-07-08 | シャープ株式会社 | 光電変換素子およびインターコネクタ付き光電変換素子 |
CN105043423B (zh) * | 2015-07-24 | 2018-06-05 | 宋金会 | 位置传感器 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4281208A (en) * | 1979-02-09 | 1981-07-28 | Sanyo Electric Co., Ltd. | Photovoltaic device and method of manufacturing thereof |
US4290844A (en) * | 1979-02-26 | 1981-09-22 | Carson Alexiou Corporation | Focal plane photo-detector mosaic array fabrication |
US4316049A (en) * | 1979-08-28 | 1982-02-16 | Rca Corporation | High voltage series connected tandem junction solar battery |
US4292092A (en) * | 1980-06-02 | 1981-09-29 | Rca Corporation | Laser processing technique for fabricating series-connected and tandem junction series-connected solar cells into a solar battery |
JPS5715476A (en) * | 1980-07-02 | 1982-01-26 | Canon Inc | Photosensor |
JPS581878A (ja) * | 1981-06-26 | 1983-01-07 | Fujitsu Ltd | 磁気バブルメモリ素子の製造方法 |
JPS59147469A (ja) * | 1983-02-14 | 1984-08-23 | Hitachi Ltd | 非晶質シリコン太陽電池 |
JPS59172274A (ja) * | 1983-03-18 | 1984-09-28 | Sanyo Electric Co Ltd | 光起電力装置の製造方法 |
-
1986
- 1986-12-30 DE DE3650363T patent/DE3650363T2/de not_active Expired - Fee Related
- 1986-12-30 EP EP86118154A patent/EP0229397B1/en not_active Expired - Lifetime
-
1987
- 1987-01-06 CN CN87100057A patent/CN1008783B/zh not_active Expired
- 1987-01-06 KR KR1019870000015A patent/KR900003842B1/ko not_active IP Right Cessation
- 1987-11-24 US US07/124,565 patent/US4810661A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR900003842B1 (ko) | 1990-06-02 |
CN1008783B (zh) | 1990-07-11 |
DE3650363T2 (de) | 1996-01-25 |
EP0229397A2 (en) | 1987-07-22 |
CN87100057A (zh) | 1987-07-22 |
DE3650363D1 (de) | 1995-09-14 |
EP0229397A3 (en) | 1989-01-25 |
US4810661A (en) | 1989-03-07 |
EP0229397B1 (en) | 1995-08-09 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
G160 | Decision to publish patent application | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 19960531 Year of fee payment: 7 |
|
LAPS | Lapse due to unpaid annual fee |