KR860009058A - 지지 광개시제 및 그것을 함유한 조성물 - Google Patents

지지 광개시제 및 그것을 함유한 조성물 Download PDF

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KR860009058A
KR860009058A KR1019860004216A KR860004216A KR860009058A KR 860009058 A KR860009058 A KR 860009058A KR 1019860004216 A KR1019860004216 A KR 1019860004216A KR 860004216 A KR860004216 A KR 860004216A KR 860009058 A KR860009058 A KR 860009058A
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KR910009110B1 (ko
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더블유. 배니 스테펜
이. 우드 라이
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미네소타 마이닝 앤드 매뉴팩츄어링 컴패니
도날드 밀러 셀
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    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/68Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the catalysts used
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G03F7/029Inorganic compounds; Onium compounds; Organic compounds having hetero atoms other than oxygen, nitrogen or sulfur
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F4/00Polymerisation catalysts
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S502/00Catalyst, solid sorbent, or support therefor: product or process of making
    • Y10S502/522Radiant or wave energy activated

Abstract

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Description

지지 광개시제 및 그것을 함유한 조성물
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (12)

  1. 금속 또는 준금속의 할로겐 함유 착화물 음이온과 오늄 또는 오르가노메탈 착화물 양이온의 광촉매성 이온 염 및 분산성 입자 캐리어로 구성된, 방사선-활성에 의해 양이온-중합성 화하물을 중합화 하기 위한 지지 개시제.
  2. 제1항에 있어서, 10중량부의 상기 입자 캐리어가 90중량부의 에폭시폴리실록산으로 교반될 때 1중량부 미만의 입자 캐리어만이 30분 경과후에 에폭시폴리실록산에 침착되는 것을 특징으로 하는 지지 개시제.
  3. 제1항 또는 제2항에 있어서, 상기 키리어는 실리카, 규조토, 셀룰로오스, 클레이, 유리 또는 전분인 것을 특징으로 하는 지지 개시제.
  4. 제1항 내지 제3항중 어느 한항에 있어서, 1중량부의 입자 캐리어당 상기 이온염 0.005 내지 5중량부로 구성되는 것을 특징으로 하는 지지 개시제.
  5. 제1항 내지 제4항중 어느 한 항에 있어서, 상기 이온염의 오늄 양이온은 주기율 표 제VA족, 제ⅥⅤ족 또는 제ⅦA족 원자의 방향족 유기원자 양이온인 것을 특징으로 하는 지지 개시제.
  6. 제1항 내지 제5항중 어느 한항에 있엇, 상기 이온염은 하기 구조식을 갖는 것을 특징으로 하는 지지 개시제.
    상기식에서, R은 벤젠에 대해 전자 끄는 성질을 갖는 방향족 기이며, R'은 R과 서로 동일하거나 상이한 방향족 기이거나, 1-18개의 탄소 원자를 갖는 직쇄, 측쇄 또는 시클릭 알킬 또는 알케닐 기이며, A는 주기율표 제VA족, 제ⅥA족, 또는 ⅦA족의 언자이며, a는 0 또는 A의 원자가 이하의 양의 정수이며, n는 A의 원자가 +1까지의 적어도 1의 양의 정수인데, 단 a와 n의 합은 A의 원자가 +1과 같음을 조건으로 하며, X는 금속 또는 준금속의 할로겐-함유 착화물 음이온이다.
  7. 제1항 내지 제4항중 어느 한항에 있어서, 광촉매성 이온 염은 오르가노메탈 착화물 양이온 및 금속 또는 준금속의 할로겐-함유 착화물 음이온을 지니는데, 상기 양이온은 중간 세기의 친핵제를 부가할 수 있으며, 상기 양이온의 금속은 주기율 표 제ⅣB족, 제ⅤB족, 제ⅥB족, 제ⅦB족 및 제ⅧB족의 원소로부터 선택되는 것을 특징으로 하는 지지 개시제.
  8. 제1항 내지 제4항 및 제7항중 어느 한 항항에 있어서, 이온 염은 하기 구조식을 갖는 것을 특징으로 하는 지지 개시제.
    [(L9) (L10)Mp]+qYn
    상기 식에서, Mp는 Cr,Mo,W,Mn,Re,Fe 및 Co로 부터 선택된 금속이며, L9는 π-전자를 제공할 수 있는 서로 상이하거나 동일한 1 또는 2의 리간드로서, 치환 및 비치환된 η3-알릴, η5-시클로펜타디에닐 및 η5-시클로헵타트리에닐과, η6-벤젠 및 치환된 η6-벤젠화합물, Mp전자가 껍질에 3 내지 8의 π-전자를 제공할 수 있는 2 내지 4의 융합링을 지닌 화합물로 부터 선택된 η6-방향족 화합물로 구성된 그룹으로부터 선택되며, L10은 일산화탄소 또는 니트로소늄으로 부터 선택된 서로 동일하거나 상이한 우수의 γ-전자를 제공하는 0 또는 1-3의 리간드인데, L9및 L10에 의해 Mp에 제공된 총 전자 전하와 Mp금속상의 이온 전하의 합은 그 착화물에 대해 q의 양의 유효 잔류 전하를 주는 것을 조건으로 하며, q는 1 또는 2의 정소, 즉 착화물 양이온의 잔류 전기 전하이며, Y는 AsF6-, SbF6- 및 SbF5OH로 부터 선택된 할로겐-함유 착화물 음이온이며, n은 1 또는 2의 정수, 즉 착화물 양이온상에 전하 q를 중성화시키기 위해 필요한 착화물 음이온의 수이다.
  9. 양이온-중합성 화합물 및 제1항 내지 제8항중 어느 한 항에 따른 방사선-활성화 지지개시제로 구성된 화학 방사선-경화성 조성물.
  10. 제9항에 있어서, 상기 양이온-중합성 화합물은 중합성 에폭사이드기-함유 화합물인 것을 특징으로 하는 조성물.
  11. (a) 양이온-중합성 화합물로 구성된 화학 방사선-경화성 조성물 및 (b) 제1항 내지 제10항 중 어느 한 항에 따른 방사선-활성화 지지 개시제로 구성되는 조성물의경화 피복물을 적어도 하나의 표면에 품는 기재로 구성된 제품.
  12. 적어도 하나의 양이온-민감 단량체를 제조하고, 제1항 내지 제8항중 어느 한항에 따른 지지 개시제와 상기 단량체를 접촉시키고, 상기 개시제를 상기 단량체에 분산시키고, 상기 단량체를 중합화하기 위해 충분한 시간 동안 결과의 분산액에 화학 방사선 광원을 조사하는 것으로 구성되는 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019860004216A 1985-05-31 1986-05-29 지지 광개시제 및 그것을 함유한 조성물 KR910009110B1 (ko)

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US06/740,231 US4677137A (en) 1985-05-31 1985-05-31 Supported photoinitiator
US740,231 1985-05-31
US740231 1991-08-05

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KR860009058A true KR860009058A (ko) 1986-12-19
KR910009110B1 KR910009110B1 (ko) 1991-10-31

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US (1) US4677137A (ko)
EP (1) EP0203829B1 (ko)
JP (1) JPH0768292B2 (ko)
KR (1) KR910009110B1 (ko)
AR (1) AR244707A1 (ko)
AU (1) AU584193B2 (ko)
BR (1) BR8602234A (ko)
CA (1) CA1262122A (ko)
DE (1) DE3676347D1 (ko)
DK (1) DK249886A (ko)

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Also Published As

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EP0203829A3 (en) 1988-08-17
EP0203829B1 (en) 1991-01-02
AU5711786A (en) 1986-12-04
CA1262122A (en) 1989-10-03
DE3676347D1 (de) 1991-02-07
BR8602234A (pt) 1987-01-13
JPH0768292B2 (ja) 1995-07-26
KR910009110B1 (ko) 1991-10-31
AR244707A1 (es) 1993-11-30
EP0203829A2 (en) 1986-12-03
JPS61278507A (ja) 1986-12-09
US4677137A (en) 1987-06-30
AU584193B2 (en) 1989-05-18
DK249886D0 (da) 1986-05-28
DK249886A (da) 1986-12-01

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