KR860002864A - 패턴 형성 방법 - Google Patents
패턴 형성 방법Info
- Publication number
- KR860002864A KR860002864A KR1019850006265A KR850006265A KR860002864A KR 860002864 A KR860002864 A KR 860002864A KR 1019850006265 A KR1019850006265 A KR 1019850006265A KR 850006265 A KR850006265 A KR 850006265A KR 860002864 A KR860002864 A KR 860002864A
- Authority
- KR
- South Korea
- Prior art keywords
- formation method
- pattern formation
- pattern
- formation
- Prior art date
Links
- 230000007261 regionalization Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59191448A JPS6170720A (ja) | 1984-09-14 | 1984-09-14 | パタ−ン形成方法 |
JP191448 | 1984-09-14 | ||
JP19920 | 1985-02-06 | ||
JP60019920A JPH0727216B2 (ja) | 1985-02-06 | 1985-02-06 | パタ−ン形成方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR860002864A true KR860002864A (ko) | 1986-04-30 |
KR930010248B1 KR930010248B1 (ko) | 1993-10-15 |
Family
ID=26356803
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019850006265A KR930010248B1 (ko) | 1984-09-14 | 1985-08-29 | 패턴 형성 방법 |
Country Status (2)
Country | Link |
---|---|
US (1) | US4835089A (ko) |
KR (1) | KR930010248B1 (ko) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5275920A (en) * | 1989-04-24 | 1994-01-04 | Siemens Aktiengesellschaft | Method of dry development utilizing quinone diazide and basic polymer resist with latent image intensification through treatment with silicon-organic compound in water |
DE69002295T2 (de) | 1989-09-25 | 1993-11-04 | Schneider Usa Inc | Mehrschichtextrusion als verfahren zur herstellung von ballons zur gefaessplastik. |
US5275913A (en) * | 1990-05-08 | 1994-01-04 | Industrial Technology Research Institute | Method for preparing resist patterns utilizing solvent development with subsequent resist pattern transfer, via a photo-hardening liquid adhesive, to a receiver substrate and oxygen reactive ion etching |
US5472488A (en) * | 1990-09-14 | 1995-12-05 | Hyundai Electronics America | Coating solution for forming glassy layers |
US5527872A (en) * | 1990-09-14 | 1996-06-18 | At&T Global Information Solutions Company | Electronic device with a spin-on glass dielectric layer |
US5100503A (en) * | 1990-09-14 | 1992-03-31 | Ncr Corporation | Silica-based anti-reflective planarizing layer |
US5304453A (en) * | 1991-07-11 | 1994-04-19 | Industrial Technology Research Institute | Method for preparing resist patterns through image layer transfer to a receiver substrate, via a photo-hardening organic liquid adhesive, with subsequent oxygen reactive ion etching |
DE19623891A1 (de) | 1996-06-06 | 1997-12-11 | Micro Resist Technology Ges Fu | Lichtempfindlicher, wäßrig-alkalisch entwickelbarer, negativ arbeitender Resist |
JP3093720B2 (ja) * | 1998-04-08 | 2000-10-03 | 松下電子工業株式会社 | パターン形成方法 |
JP4654544B2 (ja) * | 2000-07-12 | 2011-03-23 | 日産化学工業株式会社 | リソグラフィー用ギャップフィル材形成組成物 |
US20040126766A1 (en) * | 2002-12-26 | 2004-07-01 | Amorese Douglas A. | Breakaway seal for processing a subarray of an array |
EP1586945B1 (en) * | 2002-12-26 | 2015-07-29 | Nissan Chemical Industries, Ltd. | Alkali-soluble gap filling material forming composition for lithography |
JP6404757B2 (ja) | 2015-03-27 | 2018-10-17 | 信越化学工業株式会社 | レジスト下層膜材料用重合体、レジスト下層膜材料、及びパターン形成方法 |
WO2020014026A1 (en) * | 2018-07-09 | 2020-01-16 | Applied Materials, Inc. | Photoresist composition for line doubling |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2937085A (en) * | 1954-01-11 | 1960-05-17 | Ditto Inc | Composite photosensitive plate, and method of making printing plate therefrom |
US2852379A (en) * | 1955-05-04 | 1958-09-16 | Eastman Kodak Co | Azide resin photolithographic composition |
US3873313A (en) * | 1973-05-21 | 1975-03-25 | Ibm | Process for forming a resist mask |
US4125650A (en) * | 1977-08-08 | 1978-11-14 | International Business Machines Corporation | Resist image hardening process |
DE2948324C2 (de) * | 1978-12-01 | 1993-01-14 | Hitachi, Ltd., Tokio/Tokyo | Lichtempfindliches Gemisch, enthaltend eine Bisazidverbindung, und Verfahren zur Bildung von Mustern |
US4554237A (en) * | 1981-12-25 | 1985-11-19 | Hitach, Ltd. | Photosensitive resin composition and method for forming fine patterns with said composition |
US4407850A (en) * | 1982-01-11 | 1983-10-04 | The Perkin-Elmer Corporation | Profile control photoresist |
US4427713A (en) * | 1983-01-17 | 1984-01-24 | Rca Corporation | Planarization technique |
US4551409A (en) * | 1983-11-07 | 1985-11-05 | Shipley Company Inc. | Photoresist composition of cocondensed naphthol and phenol with formaldehyde in admixture with positive o-quinone diazide or negative azide |
JPS60115222A (ja) * | 1983-11-28 | 1985-06-21 | Tokyo Ohka Kogyo Co Ltd | 微細パタ−ン形成方法 |
US4631249A (en) * | 1984-01-16 | 1986-12-23 | Rohm & Haas Company | Process for forming thermally stable negative images on surfaces utilizing polyglutarimide polymer in photoresist composition |
US4532005A (en) * | 1984-05-21 | 1985-07-30 | At&T Bell Laboratories | Device lithography using multi-level resist systems |
-
1985
- 1985-08-29 KR KR1019850006265A patent/KR930010248B1/ko not_active IP Right Cessation
-
1987
- 1987-06-10 US US07/060,323 patent/US4835089A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US4835089A (en) | 1989-05-30 |
KR930010248B1 (ko) | 1993-10-15 |
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Legal Events
Date | Code | Title | Description |
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A201 | Request for examination | ||
G160 | Decision to publish patent application | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20011004 Year of fee payment: 9 |
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LAPS | Lapse due to unpaid annual fee |