KR860002741A - 광 센서 - Google Patents

광 센서 Download PDF

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Publication number
KR860002741A
KR860002741A KR1019850007015A KR850007015A KR860002741A KR 860002741 A KR860002741 A KR 860002741A KR 1019850007015 A KR1019850007015 A KR 1019850007015A KR 850007015 A KR850007015 A KR 850007015A KR 860002741 A KR860002741 A KR 860002741A
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KR
South Korea
Prior art keywords
electrode
photodiode
thin film
film transistor
charging
Prior art date
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KR1019850007015A
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English (en)
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KR900006952B1 (ko
Inventor
요시유끼 수다
Original Assignee
사바 쇼오이찌
가부시끼가이샤 도오시바
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Publication of KR860002741A publication Critical patent/KR860002741A/ko
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Publication of KR900006952B1 publication Critical patent/KR900006952B1/ko

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Thin Film Transistor (AREA)

Abstract

내용 없음

Description

광 센서
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명을 구체화시킨 광 센서의 구성을 나타내는 평면도.
제2도는 제1도의 광 센서회로도.
제7도는 박막트랜지스터의 다른 구성을 나타내는 평면도이다.
1:기판, 2:포토다이오드, 3:박막트랜지스터, 4:충전용트랜지스터, 5:검출용트랜지스터, 6:캐패시터, 11:드레인전극, 12:소오스전극, 13,25:활성층, 14,23:절연층, 15,26:게이트전극층, 16:캐소우드전극, 17,22:a-Si:H막, 18:애노우드전극, 20:빛, 21,24:전극층, 28:출력증폭기, 41,42:온도의존성.

Claims (6)

  1. 회로기판(1)위에 형성된 무정형의 실리콘포토다이오드(2)로 구성되어지는 광 센서에 있어서, 상기 회로기판위에 전극사이의 용량(C)을 갖는 상기포토다이오드(2)와 일체적으로 형성되고, 게이트전극(15)과 이 게이트전극에 인가되는 제어전압에 응답하여 그 사이에 챈널(이챈널에는 제어전압에 의해 제어되는 챈널전류가 흐름)을 형성하는 드레인 전극(11)과 소오스전극(12)을 갖추며, 상기 드레인전극과 소오스전극 한쪽과 게이트전극 사이에 형성되는 무정형의 실리콘포토 다이오드(2)를 갖는 박막트랜지스터(3)와; 상기 포토다이오드(2)전극사이의 용량을 충전하는 충전수단(4,27);충전후 입사광(20)에 응답하여 변화하는 포토다이오드(2)전극사이의 용량전압에 의해 제어되는 박막트랜지스터(3)의 챈널전류를 검출하는 검출수단(5,6,28)을 구비한 것을 특징으로 하는 광 센서.
  2. 제1항에 있어서, 포토트랜지스터(2)는 캐소우드 전극(16)과, 투광성도전막으로 이루어진 애노우드전극(18), 캐소우드전극 및 애노우드전극에 의합 샌드위치되는 수소화무정형의 실리콘막(17)을 갖고서 캐소우드전극과 애노우드 전극이 각각 박막트랜지스터의 드레인전극(11)과 게이트 전극(12)에 전기적으로 접속된 것을 특징으로 하는 광 센서.
  3. 제1항에 있어서, 포토다이오드(2)는 캐소우드전극(16)과, 투광성도전막으로 이루어진 애노우드전극, 캐소우드 전극과 애노우드전극에 의해 샌드위치되는 수소화무정형의 실리콘막(17)을 갖고서 캐소우드전극과 애노우드전극이 각각 박막트랜지스터의 게이트전극(12)과 소오스전극(11)에 전기적으로 접속된 것을 특징으로 하는 광 센서.
  4. 제1항에 있어서, 충전수단은 직류전원(27)과 이 직류전원을 포토다이오드(2)에 결합시켜 그 전극사이의 용량(C)을 충전시킨 충전스위치소자(4)를 갖고, 상기 충전스위치소자는 외부에서 제공되는 제어신호에 의해 온.오프상태로 되는 회로기판위에 박막트랜지스터(3)와 포토다이오드(2)에 인접하여 형성되는 다른 박막 트랜지스터에서 형성된 것을 특징으로 하는 광 센서.
  5. 제1항에 있어서, 검출수단은 박막트랜지스터(3)에 결합되어 그 챈널전류에 의해 충전되는 전한축적용 캐패시터(6)와, 출력증폭기(28), 외부제어신호에 의해 온.오프상태로 되고 전하축적용캐패시터를 출력증폭기에 결합하기 위한 검출스위치(5)를 구비한 것을 특징으로 하는 광 센서.
  6. 제1항에 있어서, 검출수단은 박막트랜지스터(3)에 결합되고 그 챈널전류에 의해 충전되는 전하축적용 캐패시터(6); 광 센서의 출력신호를 취출하기 위한 출력증폭기(28); 외부제어신호에 의해 온.오프상태로 되어 전하축적용 캐패시터를 출력증폭기에 결합하기 위한 검출스위치 소자(5)를 구비하고, 검출스위치소자가 박막트랜지스터에서 형성되면서 전하축적용 캐패시터(6)와 검출스위치소자(5)가 회로기판(1)위에 형성된 것을 특징으로 하는 광 센서.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019850007015A 1984-09-29 1985-09-24 광센서 KR900006952B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP59204806A JPS6182466A (ja) 1984-09-29 1984-09-29 光センサ
JP59-204806 1984-09-29
JP204806 1984-09-29

Publications (2)

Publication Number Publication Date
KR860002741A true KR860002741A (ko) 1986-04-28
KR900006952B1 KR900006952B1 (ko) 1990-09-25

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Application Number Title Priority Date Filing Date
KR1019850007015A KR900006952B1 (ko) 1984-09-29 1985-09-24 광센서

Country Status (5)

Country Link
US (1) US4823178A (ko)
EP (1) EP0177275B1 (ko)
JP (1) JPS6182466A (ko)
KR (1) KR900006952B1 (ko)
DE (1) DE3578269D1 (ko)

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Also Published As

Publication number Publication date
EP0177275A2 (en) 1986-04-09
EP0177275B1 (en) 1990-06-13
DE3578269D1 (de) 1990-07-19
US4823178A (en) 1989-04-18
EP0177275A3 (en) 1988-09-07
JPS6182466A (ja) 1986-04-26
KR900006952B1 (ko) 1990-09-25

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