KR850001610A - Semiconductor memory - Google Patents

Semiconductor memory Download PDF

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Publication number
KR850001610A
KR850001610A KR1019840003760A KR840003760A KR850001610A KR 850001610 A KR850001610 A KR 850001610A KR 1019840003760 A KR1019840003760 A KR 1019840003760A KR 840003760 A KR840003760 A KR 840003760A KR 850001610 A KR850001610 A KR 850001610A
Authority
KR
South Korea
Prior art keywords
memory cell
selecting
fuse element
semiconductor
selection circuit
Prior art date
Application number
KR1019840003760A
Other languages
Korean (ko)
Inventor
미쯔오 이소베 (외 5)
Original Assignee
사바 쇼오이찌
가부시기 가이샤 도오시바
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 사바 쇼오이찌, 가부시기 가이샤 도오시바 filed Critical 사바 쇼오이찌
Publication of KR850001610A publication Critical patent/KR850001610A/en
Priority to KR2019890021522U priority Critical patent/KR900002517Y1/en

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/84—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/83—Masking faults in memories by using spares or by reconfiguring using programmable devices with reduced power consumption
    • G11C29/832—Masking faults in memories by using spares or by reconfiguring using programmable devices with reduced power consumption with disconnection of faulty elements

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)

Abstract

내용 없음No content

Description

반도체 메모리Semiconductor memory

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제1도는 종래의 반도체 메모리회로도, 제2도는 본 발명의 일실시예를 나타내는 회로도이다.1 is a conventional semiconductor memory circuit diagram, and FIG. 2 is a circuit diagram showing an embodiment of the present invention.

Claims (3)

반도체 기판상에 형성된 통상적인 정보보존용 메모리셀, 그 메모리셀을 선택하는 통상적인 선택회로 상기의 메모리셀 및 상기의 선택회로와 별도로 설치되어 상기의 메모리셀에 불량이 발생된 경우 불량을 구제하기 위한 용장용(冗長用)의 불량구제용 메모리셀, 그 불량구제용 메모리셀을 선택하는 불량구제용 선택회로를 구비한 반도체 메모리에다 상기의 통상적인 메모리셀을 선택하는 선택선과 상기의 통상적인 선택회로 사이에 끼워넣어진 휴즈소자를 구비한 것을 특징으로 하는 반도체 메모리.A conventional information storage memory cell formed on a semiconductor substrate, a conventional selection circuit for selecting the memory cell is provided separately from the memory cell and the selection circuit to remedy the failure when the memory cell occurs. A selection line for selecting the above-mentioned conventional memory cell to a semiconductor memory having a redundancy-repairing memory cell for redundancy, and a selection circuit for failing-out for selecting the memory cell for defective repair; And a fuse element sandwiched between circuits. 제1항에 있어서, 상기의 휴즈소자는 상기의 반도체기판에 형성된 트랜지스터의 게이트 전극과 동일 재질, 동일공정으로 형성되어 진 것을 특징으로 하는 반도체 메모리.The semiconductor memory according to claim 1, wherein the fuse element is formed of the same material and in the same process as the gate electrode of the transistor formed on the semiconductor substrate. 제1항에 있어서, 상기의 휴즈소자는 상기의 반도체기판에 형성된 선재료와 동일재질, 동일공정으로 형성되어 진 것을 특징으로 하는 반도체 메모리.The semiconductor memory according to claim 1, wherein the fuse element is formed of the same material and the same process as the wire material formed on the semiconductor substrate. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019840003760A 1983-07-13 1984-06-29 Semiconductor memory KR850001610A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR2019890021522U KR900002517Y1 (en) 1983-07-13 1989-12-28 The semiconductor memory device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP58126233A JPS6018899A (en) 1983-07-13 1983-07-13 Semiconductor memory
JP58-126233 1983-07-13

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR2019890021522U Division KR900002517Y1 (en) 1983-07-13 1989-12-28 The semiconductor memory device

Publications (1)

Publication Number Publication Date
KR850001610A true KR850001610A (en) 1985-03-30

Family

ID=14930075

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019840003760A KR850001610A (en) 1983-07-13 1984-06-29 Semiconductor memory

Country Status (2)

Country Link
JP (1) JPS6018899A (en)
KR (1) KR850001610A (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4752914A (en) * 1984-05-31 1988-06-21 Fujitsu Limited Semiconductor integrated circuit with redundant circuit replacement
JPS61185114A (en) * 1985-02-13 1986-08-18 三菱農機株式会社 Fertilizer feeder in fertilizing machine
JP2629957B2 (en) * 1989-05-12 1997-07-16 松下電器産業株式会社 Storage device
JPH0599484A (en) * 1991-07-12 1993-04-20 Mitsubishi Electric Corp Operation controller for air-conditioning machine
US7130931B2 (en) * 2003-06-18 2006-10-31 International Business Machines Corporation Method, system, and article of manufacture for selecting replication volumes

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5671900A (en) * 1979-11-12 1981-06-15 Mitsubishi Electric Corp Random access memory
JPS57210500A (en) * 1981-06-19 1982-12-24 Mitsubishi Electric Corp Semiconductor storage device
JPS58105496A (en) * 1981-12-17 1983-06-23 Toshiba Corp Semiconductor integrated circuit

Also Published As

Publication number Publication date
JPS6018899A (en) 1985-01-30

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Legal Events

Date Code Title Description
E902 Notification of reason for refusal
E601 Decision to refuse application
WICV Withdrawal of application forming a basis of a converted application