KR840004986A - 반도체 광전 변환장치 및 그 제조방법 - Google Patents

반도체 광전 변환장치 및 그 제조방법 Download PDF

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KR840004986A
KR840004986A KR1019830002325A KR830002325A KR840004986A KR 840004986 A KR840004986 A KR 840004986A KR 1019830002325 A KR1019830002325 A KR 1019830002325A KR 830002325 A KR830002325 A KR 830002325A KR 840004986 A KR840004986 A KR 840004986A
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crystal semiconductor
photoelectric conversion
conversion device
semiconductor layer
thin film
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슌페이 야마자끼
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아마자끼 슌페이
가부시끼가사샤 한도다이 에네르기 겐뀨소
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Abstract

내용 없음

Description

반도체 광전 변환장치 및 그 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 PIN형 반도체 광전변환장치의 제1실시예를 개략 도시한 단면확대도.
제2a도는 제1도에 도시된 본 발명의 PIN형 반도체 광전 변환장치에 있어서 섬유상구조의 비 단결정 반도체층의 구성을 도시한 도면.
제2b도는 제1도에 도시된 본 발명의 PIN형 반도체 광전 변환장치에 있어서 섬유상 구조의 비 단결정 반도체층의 전자회절영상을 도시한 도면.
제3a도 및 제3b도는 본 발명에 의한 섬유상 구조의 비 단결정 반도체층과 비교되는 미정질의 비 단결정 반도체층의 전자회절영상 및 구성을 각각 도시한 도면.

Claims (18)

  1. PIN형 반도체 광전변환장치로서, 제1도전형의 제1비 단결정반도체층과 제1도전형과는 반대인 제2도전형의 I형 제2비 단결정반도체층과 제3비단 결정반도체층을 포함하고 있는 비 단결정 반도체 박막부재 및 ; 각각 비 단결정반도체 박막부재의 제1 및 제3비 단결정 반도체층과 오믹 접촉을 이루는 제1 및 제2전극을 구비하고 있는 광전변환장치에 있어서, 비 단결정 반도체 박막부재의 제1 및 제3비 단결정 반도체층의 한쪽 또는 양쪽모두가 동일 반도체 재질의 무정질 및 미정질 구조의 흡광계수보다 작은 흡광계수를 가진 섬유상 구조를 가지는 것을 특징으로 하는 반도체 광전 변환장치.
  2. 제1항에 의한 PIN형 반도체 광전 변환 장치에 있어서, 섬유성 구조를 가진 제1 및 제2비 단결정 반도체층의 한쪽 또는 양쪽을 형성하는 결정이 각각 면(110)과 제1 및 제3비 단결정반도체층이 형성되는 면에 수직인 선을 따라 각각 연장되거나 또는 수직선에 ±30°의 각도로 경사진 선을 따라 각각 연장되는 축(110)을 가진 장치.
  3. 제1항에 의한 PIN형 반도체 광전변환 장치에 있어서, 섬유상구조를 가진 제1 및 제3비 단결정 반도체층의 한쪽 또는 양쪽이 재결합 중심 중화재로서 수소 또는 할로겐을 함유하고 있는 장치.
  4. 제1항에 의한 PIN형 반도체 광전변환 장치에 있어서, 비 단결정 반도체 박막부재의 제1, 제2 및 제3비 단결정 반도체층이 실리콘으로 형성되거나 또는 주로 실리콘으로 구성된 반도체를 형성되는 장치.
  5. 제1항에 의한 PIN형 반도체 광전변환 장치에 있어서, 비 단결정 반도체 박막부재의 제1비 단결정 반도체층이 입사광측상에서 섬유상 구조의 비 단결정 반도체층으로 형성되고, 제1비 단결정 반도체층이 제2비 단결정 반도체층에서의 에너지 대역갭 보다 큰 에너지 대역갭을 갖는 장치.
  6. 제5항에 의한 PIN형 반도체 광전변환 장치에 있어서, 비 단결정 반도체 박막부재의 제2비 단결정 반도체층이 실리콘으로 형성되고, 제1비 단결정 반도체 층이 실리콘 카바이드 SixC1-x(0〈X〈1)로 형성되는 장치.
  7. 제1항에 의한 PIN형 반도체 광전변환 장치에 있어서, 비 단결정 반도체 박막부재의 제2비 단결정 반도체층이 미정질 및 무정질 구조중의 한 구조를 가지는 장치.
  8. 제1항에 의한 PIN형 반도체 광전변환 장치에 있어서, 비 단결정 반도체 박막부재의 제1비 단결정 반도체층이 입사광측상에서 섬유상 구조의 비 단결정 반도체층으로 형성되며, 제3비 단결정 반도체층이 동일한 반도체 재질의 무정질 구조의 흡광계수보다 작은 흡광계수를 가진 섬유상 구조를 가지며, 제2전극이 반사전극에 의해 형성되는 장치.
  9. 제8항에 의한 PIN형 반도체 광전변환 장치에 있어서, 제2전극을 형성하는 반사전극이 비 단결정 반도체층의 제3비 단결정 반도체층상에 형성된 투광도전층과 이 투광도전층상에 형성된 반사도전층을 구비하고 있는 장치.
  10. 제9항에 의한 PIN형 반도체 광전변환 장치에 있어서, 제2전극을 형성하는 반사전극의 투광도전층이 금속산화물상에 형성되고, 반사도전층이 금속으로 형성된 장치.
  11. 제10항에 의한 PIN형 반도체 광전변환 장치에 있어서, 비 단결정 반도체 박막부재의 제3비 단결정 반도체층이 N형이고, 제2전극을 이루는 반사 전극의 투광도전층을 형성하는 금속산화물이 주로 인듐 산화물로 구성된 금속산화물인 장치.
  12. 제11항에 의한 PIN형 반도체 광전변환 장치에 있어서, 제2전극을 형성하는 반사전극의 반사도전층이 알루미늄 또는 은으로 형성된 장치.
  13. 제10항에 의한 PIN형 반도체 광전변환 장치에 있어서, 비 단결정 반도체 박막부재의 제3비 단결정 반도체층이 P형이고, 제2전극을 이루는 반사전극의 투광도전층이 주석 산화물로 구성된 금속산화물로 형성된 장치.
  14. 제13항에 의한 PIN형 반도체 광전변환 장치에 있어서, 제2전극을 이루는 반사전극의 반사도전층이 알루미늄 또는 은으로 형성된 장치.
  15. 제1항에 의한 PIN형 반도체 광전변환 장치에 있어서, 비 단결정 반도체 박막부재의 제1비 단결정 반도체층이 입사광측상에서 비 단결정 반도체층으로 형성되고 제1 및 제2비 단결정 반도체층은 동일 반도체 재질의 미정질 및 무정질의 흡광계수보다 작은 흡광계수를 가진 섬유상 구조를 가지며, 제2비 단결정 반도체층은 마이크로 결정 또는 무정질 구조중의 한 구조를 가지며, 제2전극은 반사전극에 의해 형성되는 장치.
  16. PIN형 반도체 광전변환장치의 제조방법으로서, 반도체 재질가스의 가스혼합물과 재결합 중심 중화재가스 및 P형 또는 N형 불순물 재질 가사를 기판이 배치된 반응실내로 주입하는 단계와, 가스혼합물을 화학중착반응에 의해 기판에 피착시켜 P형 또는 N형 비 단결정반도체층을 형성하도록 하는 단계단계를 구비하고 있는 방법에 있어서, 기판의 주표면은 가스혼합물의 유통 방향으로 연신되어 배치되고, 화학증착반응은 반응실내에서 0.001 내지 10트로의 압력과 100°내지 400℃의 온도범위내에서 기판에 실행되어 섬유상 구조를 가진 비 단결정 반도체층인 P형 또는 N형 비 단결정 반도체층을 형성하는 방법.
  17. 제16항에 의한 PIN형 반도체 광전변환 장치의 제조방법에 있어서, 반응실내로 수소가스를 주입하여 반응실내의 나머지 산소가 제거된 후 수소가스가 화학 증착반응을 실행하도록 하는 방법.
  18. 제16항에 의한 PIN형 반도체 광전변환 장치의 제조방법에 있어서, 가스 혼합물에 전기에너지 및 광학에너지는 한쪽 또는 양쪽 모두를 공급하는데 의해 화학 증착 반응이 실행되도록 한 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019830002325A 1982-05-24 1983-05-24 반도체 광전 변환장치 및 그 제조방법 KR890003148B1 (ko)

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JPS58204527A (ja) 1983-11-29
KR890003148B1 (ko) 1989-08-23
AU559629B2 (en) 1987-03-19
US4591893A (en) 1986-05-27

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