KR840004986A - 반도체 광전 변환장치 및 그 제조방법 - Google Patents
반도체 광전 변환장치 및 그 제조방법 Download PDFInfo
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- KR840004986A KR840004986A KR1019830002325A KR830002325A KR840004986A KR 840004986 A KR840004986 A KR 840004986A KR 1019830002325 A KR1019830002325 A KR 1019830002325A KR 830002325 A KR830002325 A KR 830002325A KR 840004986 A KR840004986 A KR 840004986A
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- crystal semiconductor
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- 239000004065 semiconductor Substances 0.000 title claims description 72
- 238000006243 chemical reaction Methods 0.000 title claims description 30
- 238000004519 manufacturing process Methods 0.000 title claims 4
- 239000013078 crystal Substances 0.000 claims description 44
- 239000010409 thin film Substances 0.000 claims 11
- 239000000463 material Substances 0.000 claims 6
- 239000007789 gas Substances 0.000 claims 5
- 238000010521 absorption reaction Methods 0.000 claims 4
- 229910044991 metal oxide Inorganic materials 0.000 claims 4
- 150000004706 metal oxides Chemical class 0.000 claims 4
- 239000000758 substrate Substances 0.000 claims 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 3
- 238000005229 chemical vapour deposition Methods 0.000 claims 3
- 239000000203 mixture Substances 0.000 claims 3
- 229910052710 silicon Inorganic materials 0.000 claims 3
- 239000010703 silicon Substances 0.000 claims 3
- 229910052782 aluminium Inorganic materials 0.000 claims 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 2
- 238000000034 method Methods 0.000 claims 2
- 230000003472 neutralizing effect Effects 0.000 claims 2
- 230000006798 recombination Effects 0.000 claims 2
- 229910052709 silver Inorganic materials 0.000 claims 2
- 239000004332 silver Substances 0.000 claims 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 238000000151 deposition Methods 0.000 claims 1
- 229910052736 halogen Inorganic materials 0.000 claims 1
- 150000002367 halogens Chemical class 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 239000012535 impurity Substances 0.000 claims 1
- 229910003437 indium oxide Inorganic materials 0.000 claims 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 230000003287 optical effect Effects 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical group [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 1
- 229910010271 silicon carbide Inorganic materials 0.000 claims 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims 1
- 229910001887 tin oxide Inorganic materials 0.000 claims 1
- 238000002003 electron diffraction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
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Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 PIN형 반도체 광전변환장치의 제1실시예를 개략 도시한 단면확대도.
제2a도는 제1도에 도시된 본 발명의 PIN형 반도체 광전 변환장치에 있어서 섬유상구조의 비 단결정 반도체층의 구성을 도시한 도면.
제2b도는 제1도에 도시된 본 발명의 PIN형 반도체 광전 변환장치에 있어서 섬유상 구조의 비 단결정 반도체층의 전자회절영상을 도시한 도면.
제3a도 및 제3b도는 본 발명에 의한 섬유상 구조의 비 단결정 반도체층과 비교되는 미정질의 비 단결정 반도체층의 전자회절영상 및 구성을 각각 도시한 도면.
Claims (18)
- PIN형 반도체 광전변환장치로서, 제1도전형의 제1비 단결정반도체층과 제1도전형과는 반대인 제2도전형의 I형 제2비 단결정반도체층과 제3비단 결정반도체층을 포함하고 있는 비 단결정 반도체 박막부재 및 ; 각각 비 단결정반도체 박막부재의 제1 및 제3비 단결정 반도체층과 오믹 접촉을 이루는 제1 및 제2전극을 구비하고 있는 광전변환장치에 있어서, 비 단결정 반도체 박막부재의 제1 및 제3비 단결정 반도체층의 한쪽 또는 양쪽모두가 동일 반도체 재질의 무정질 및 미정질 구조의 흡광계수보다 작은 흡광계수를 가진 섬유상 구조를 가지는 것을 특징으로 하는 반도체 광전 변환장치.
- 제1항에 의한 PIN형 반도체 광전 변환 장치에 있어서, 섬유성 구조를 가진 제1 및 제2비 단결정 반도체층의 한쪽 또는 양쪽을 형성하는 결정이 각각 면(110)과 제1 및 제3비 단결정반도체층이 형성되는 면에 수직인 선을 따라 각각 연장되거나 또는 수직선에 ±30°의 각도로 경사진 선을 따라 각각 연장되는 축(110)을 가진 장치.
- 제1항에 의한 PIN형 반도체 광전변환 장치에 있어서, 섬유상구조를 가진 제1 및 제3비 단결정 반도체층의 한쪽 또는 양쪽이 재결합 중심 중화재로서 수소 또는 할로겐을 함유하고 있는 장치.
- 제1항에 의한 PIN형 반도체 광전변환 장치에 있어서, 비 단결정 반도체 박막부재의 제1, 제2 및 제3비 단결정 반도체층이 실리콘으로 형성되거나 또는 주로 실리콘으로 구성된 반도체를 형성되는 장치.
- 제1항에 의한 PIN형 반도체 광전변환 장치에 있어서, 비 단결정 반도체 박막부재의 제1비 단결정 반도체층이 입사광측상에서 섬유상 구조의 비 단결정 반도체층으로 형성되고, 제1비 단결정 반도체층이 제2비 단결정 반도체층에서의 에너지 대역갭 보다 큰 에너지 대역갭을 갖는 장치.
- 제5항에 의한 PIN형 반도체 광전변환 장치에 있어서, 비 단결정 반도체 박막부재의 제2비 단결정 반도체층이 실리콘으로 형성되고, 제1비 단결정 반도체 층이 실리콘 카바이드 SixC1-x(0〈X〈1)로 형성되는 장치.
- 제1항에 의한 PIN형 반도체 광전변환 장치에 있어서, 비 단결정 반도체 박막부재의 제2비 단결정 반도체층이 미정질 및 무정질 구조중의 한 구조를 가지는 장치.
- 제1항에 의한 PIN형 반도체 광전변환 장치에 있어서, 비 단결정 반도체 박막부재의 제1비 단결정 반도체층이 입사광측상에서 섬유상 구조의 비 단결정 반도체층으로 형성되며, 제3비 단결정 반도체층이 동일한 반도체 재질의 무정질 구조의 흡광계수보다 작은 흡광계수를 가진 섬유상 구조를 가지며, 제2전극이 반사전극에 의해 형성되는 장치.
- 제8항에 의한 PIN형 반도체 광전변환 장치에 있어서, 제2전극을 형성하는 반사전극이 비 단결정 반도체층의 제3비 단결정 반도체층상에 형성된 투광도전층과 이 투광도전층상에 형성된 반사도전층을 구비하고 있는 장치.
- 제9항에 의한 PIN형 반도체 광전변환 장치에 있어서, 제2전극을 형성하는 반사전극의 투광도전층이 금속산화물상에 형성되고, 반사도전층이 금속으로 형성된 장치.
- 제10항에 의한 PIN형 반도체 광전변환 장치에 있어서, 비 단결정 반도체 박막부재의 제3비 단결정 반도체층이 N형이고, 제2전극을 이루는 반사 전극의 투광도전층을 형성하는 금속산화물이 주로 인듐 산화물로 구성된 금속산화물인 장치.
- 제11항에 의한 PIN형 반도체 광전변환 장치에 있어서, 제2전극을 형성하는 반사전극의 반사도전층이 알루미늄 또는 은으로 형성된 장치.
- 제10항에 의한 PIN형 반도체 광전변환 장치에 있어서, 비 단결정 반도체 박막부재의 제3비 단결정 반도체층이 P형이고, 제2전극을 이루는 반사전극의 투광도전층이 주석 산화물로 구성된 금속산화물로 형성된 장치.
- 제13항에 의한 PIN형 반도체 광전변환 장치에 있어서, 제2전극을 이루는 반사전극의 반사도전층이 알루미늄 또는 은으로 형성된 장치.
- 제1항에 의한 PIN형 반도체 광전변환 장치에 있어서, 비 단결정 반도체 박막부재의 제1비 단결정 반도체층이 입사광측상에서 비 단결정 반도체층으로 형성되고 제1 및 제2비 단결정 반도체층은 동일 반도체 재질의 미정질 및 무정질의 흡광계수보다 작은 흡광계수를 가진 섬유상 구조를 가지며, 제2비 단결정 반도체층은 마이크로 결정 또는 무정질 구조중의 한 구조를 가지며, 제2전극은 반사전극에 의해 형성되는 장치.
- PIN형 반도체 광전변환장치의 제조방법으로서, 반도체 재질가스의 가스혼합물과 재결합 중심 중화재가스 및 P형 또는 N형 불순물 재질 가사를 기판이 배치된 반응실내로 주입하는 단계와, 가스혼합물을 화학중착반응에 의해 기판에 피착시켜 P형 또는 N형 비 단결정반도체층을 형성하도록 하는 단계단계를 구비하고 있는 방법에 있어서, 기판의 주표면은 가스혼합물의 유통 방향으로 연신되어 배치되고, 화학증착반응은 반응실내에서 0.001 내지 10트로의 압력과 100°내지 400℃의 온도범위내에서 기판에 실행되어 섬유상 구조를 가진 비 단결정 반도체층인 P형 또는 N형 비 단결정 반도체층을 형성하는 방법.
- 제16항에 의한 PIN형 반도체 광전변환 장치의 제조방법에 있어서, 반응실내로 수소가스를 주입하여 반응실내의 나머지 산소가 제거된 후 수소가스가 화학 증착반응을 실행하도록 하는 방법.
- 제16항에 의한 PIN형 반도체 광전변환 장치의 제조방법에 있어서, 가스 혼합물에 전기에너지 및 광학에너지는 한쪽 또는 양쪽 모두를 공급하는데 의해 화학 증착 반응이 실행되도록 한 방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP87801 | 1982-05-24 | ||
JP57087801A JPS58204527A (ja) | 1982-05-24 | 1982-05-24 | 繊維構造を有する半導体およびその作製方法 |
JP57-87801 | 1982-05-24 |
Publications (2)
Publication Number | Publication Date |
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KR840004986A true KR840004986A (ko) | 1984-10-31 |
KR890003148B1 KR890003148B1 (ko) | 1989-08-23 |
Family
ID=13925079
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019830002325A KR890003148B1 (ko) | 1982-05-24 | 1983-05-24 | 반도체 광전 변환장치 및 그 제조방법 |
Country Status (5)
Country | Link |
---|---|
US (2) | US4591893A (ko) |
JP (1) | JPS58204527A (ko) |
KR (1) | KR890003148B1 (ko) |
AU (1) | AU559629B2 (ko) |
GB (1) | GB2123606B (ko) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60222831A (ja) * | 1984-04-20 | 1985-11-07 | Nippon Kogaku Kk <Nikon> | アルバダ式カメラフアインダ−の視野内表示装置 |
US4950614A (en) * | 1984-05-15 | 1990-08-21 | Semiconductor Energy Laboratory Co., Ltd. | Method of making a tandem type semiconductor photoelectric conversion device |
DE3441922C2 (de) * | 1984-11-16 | 1986-10-02 | Messerschmitt-Bölkow-Blohm GmbH, 8012 Ottobrunn | Fotokathode für den Infrarotbereich |
US5753542A (en) | 1985-08-02 | 1998-05-19 | Semiconductor Energy Laboratory Co., Ltd. | Method for crystallizing semiconductor material without exposing it to air |
US5296405A (en) * | 1985-08-02 | 1994-03-22 | Semiconductor Energy Laboratory Co.., Ltd. | Method for photo annealing non-single crystalline semiconductor films |
US4695859A (en) * | 1986-10-20 | 1987-09-22 | Energy Conversion Devices, Inc. | Thin film light emitting diode, photonic circuit employing said diode imager employing said circuits |
DE3850157T2 (de) * | 1987-03-23 | 1995-02-09 | Hitachi Ltd | Photoelektrische Umwandlungsanordnung. |
JP2616929B2 (ja) * | 1987-08-22 | 1997-06-04 | 株式会社日本自動車部品総合研究所 | 微結晶炭化ケイ素半導体膜の製造方法 |
JPH0697683B2 (ja) * | 1989-11-10 | 1994-11-30 | 株式会社東芝 | 半導体装置の製造方法 |
US5578520A (en) | 1991-05-28 | 1996-11-26 | Semiconductor Energy Laboratory Co., Ltd. | Method for annealing a semiconductor |
US5766344A (en) * | 1991-09-21 | 1998-06-16 | Semiconductor Energy Laboratory Co., Ltd. | Method for forming a semiconductor |
US7097712B1 (en) | 1992-12-04 | 2006-08-29 | Semiconductor Energy Laboratory Co., Ltd. | Apparatus for processing a semiconductor |
KR100250020B1 (ko) * | 1993-03-02 | 2000-03-15 | 가네꼬 히사시 | 반도체 소자용 다결정 실리콘 박막 형성 방법(method of forming polycrystalline silicon thin films for semiconductor devices) |
US6897100B2 (en) | 1993-11-05 | 2005-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Method for processing semiconductor device apparatus for processing a semiconductor and apparatus for processing semiconductor device |
CN1052566C (zh) | 1993-11-05 | 2000-05-17 | 株式会社半导体能源研究所 | 制造半导体器件的方法 |
KR100652909B1 (ko) * | 1998-03-06 | 2006-12-01 | 에이에스엠 아메리카, 인코포레이티드 | 하이 스텝 커버리지를 갖는 실리콘 증착 방법 |
US7396563B2 (en) * | 2002-05-23 | 2008-07-08 | Sixtron Advanced Materials, Inc. | Ceramic thin film on various substrates, and process for producing same |
WO2011001842A1 (en) * | 2009-07-03 | 2011-01-06 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and manufacturing method thereof |
US9443730B2 (en) | 2014-07-18 | 2016-09-13 | Asm Ip Holding B.V. | Process for forming silicon-filled openings with a reduced occurrence of voids |
US9837271B2 (en) | 2014-07-18 | 2017-12-05 | Asm Ip Holding B.V. | Process for forming silicon-filled openings with a reduced occurrence of voids |
US10460932B2 (en) | 2017-03-31 | 2019-10-29 | Asm Ip Holding B.V. | Semiconductor device with amorphous silicon filled gaps and methods for forming |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4196438A (en) * | 1976-09-29 | 1980-04-01 | Rca Corporation | Article and device having an amorphous silicon containing a halogen and method of fabrication |
US4270018A (en) * | 1979-12-26 | 1981-05-26 | Gibbons James F | Amorphous solar cells |
JPS5710920A (en) * | 1980-06-23 | 1982-01-20 | Canon Inc | Film forming process |
KR900005566B1 (ko) * | 1980-09-09 | 1990-07-31 | 에너지 컨버션 디바이시즈, 인코포레이티드 | 광응답 비정질 게르마늄합금 제조방법 및 그 합금으로 만든 디바이스 |
US4339470A (en) * | 1981-02-13 | 1982-07-13 | Rca Corporation | Fabricating amorphous silicon solar cells by varying the temperature _of the substrate during deposition of the amorphous silicon layer |
JPS57160174A (en) * | 1981-03-30 | 1982-10-02 | Hitachi Ltd | Thin film solar battery |
US4401840A (en) * | 1981-07-22 | 1983-08-30 | Photowatt International, Inc. | Semicrystalline solar cell |
-
1982
- 1982-05-24 JP JP57087801A patent/JPS58204527A/ja active Pending
-
1983
- 1983-05-23 AU AU14883/83A patent/AU559629B2/en not_active Ceased
- 1983-05-24 US US06/497,702 patent/US4591893A/en not_active Expired - Fee Related
- 1983-05-24 GB GB08314366A patent/GB2123606B/en not_active Expired
- 1983-05-24 KR KR1019830002325A patent/KR890003148B1/ko not_active IP Right Cessation
-
1987
- 1987-05-18 US US07/051,170 patent/US4843022A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
GB8314366D0 (en) | 1983-06-29 |
AU1488383A (en) | 1983-12-01 |
US4843022A (en) | 1989-06-27 |
GB2123606A (en) | 1984-02-01 |
GB2123606B (en) | 1985-12-24 |
JPS58204527A (ja) | 1983-11-29 |
KR890003148B1 (ko) | 1989-08-23 |
AU559629B2 (en) | 1987-03-19 |
US4591893A (en) | 1986-05-27 |
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