KR20240085514A - Discharge stabilization nozzle for semiconductor wafer cleaning equipment - Google Patents

Discharge stabilization nozzle for semiconductor wafer cleaning equipment Download PDF

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Publication number
KR20240085514A
KR20240085514A KR1020220170448A KR20220170448A KR20240085514A KR 20240085514 A KR20240085514 A KR 20240085514A KR 1020220170448 A KR1020220170448 A KR 1020220170448A KR 20220170448 A KR20220170448 A KR 20220170448A KR 20240085514 A KR20240085514 A KR 20240085514A
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South Korea
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spm
compound solution
nozzle
spraying
force
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KR1020220170448A
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Korean (ko)
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박기환
정영주
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주식회사 앤아이윈
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Publication of KR20240085514A publication Critical patent/KR20240085514A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B1/00—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means
    • B05B1/34—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means designed to influence the nature of flow of the liquid or other fluent material, e.g. to produce swirl
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B12/00—Arrangements for controlling delivery; Arrangements for controlling the spray area
    • B05B12/08—Arrangements for controlling delivery; Arrangements for controlling the spray area responsive to condition of liquid or other fluent material to be discharged, of ambient medium or of target ; responsive to condition of spray devices or of supply means, e.g. pipes, pumps or their drive means
    • B05B12/085—Arrangements for controlling delivery; Arrangements for controlling the spray area responsive to condition of liquid or other fluent material to be discharged, of ambient medium or of target ; responsive to condition of spray devices or of supply means, e.g. pipes, pumps or their drive means responsive to flow or pressure of liquid or other fluent material to be discharged
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B7/00—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas
    • B05B7/02—Spray pistols; Apparatus for discharge
    • B05B7/04—Spray pistols; Apparatus for discharge with arrangements for mixing liquids or other fluent materials before discharge
    • B05B7/0408—Spray pistols; Apparatus for discharge with arrangements for mixing liquids or other fluent materials before discharge with arrangements for mixing two or more liquids

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

본 발명은 반도체 웨이퍼 세정장치용 토출 안정화 노즐에 관한 것으로서, 보다 상세하게는 반도체 웨이퍼 세정장치에서 사용되는 분사용 노즐로서, 황산(A)과 과산화수소를 혼합시켜 SPM 화합용액을 웨이퍼에 분사하는 경우, 황산과 과산화수소가 노즐 내에서 혼합되면서 승온되고 압력이 증가되어, 분사시 강한 토출력과 타력을 외부로 분사되게 되고, 이로써 웨이퍼 표면에 패턴손상을 야기하기에, 노즐 내부에 홀 형상 및 크기를 변경적용하여, 증기의 힘과 타력을 분사시켜 균일하고 일정하게 분사가 가능토록 하는 반도체 웨이퍼 세정장치용 토출 안정화 노즐에 관한 것이다.The present invention relates to a discharge stabilization nozzle for a semiconductor wafer cleaning device, and more specifically, to a spraying nozzle used in a semiconductor wafer cleaning device, where sulfuric acid (A) and hydrogen peroxide are mixed to spray the SPM compound solution onto the wafer, As sulfuric acid and hydrogen peroxide are mixed in the nozzle, the temperature rises and the pressure increases, causing strong discharge force and force to be sprayed outward, which causes pattern damage on the wafer surface, changing the shape and size of the hole inside the nozzle. This relates to a discharge stabilization nozzle for a semiconductor wafer cleaning device that enables uniform and constant spraying by spraying the force and thrust of steam.

Description

반도체 웨이퍼 세정장치용 토출 안정화 노즐{Discharge stabilization nozzle for semiconductor wafer cleaning equipment}Discharge stabilization nozzle for semiconductor wafer cleaning equipment}

본 발명은 반도체 웨이퍼 세정장치에서 SPM 화합용액을 분사시, 웨이퍼 표면에 패턴을 손상시키지 않도록, 토출시 타력 및 압력이 해소되어 균일하고 일정하게 분사가 가능토록 하는 반도체 웨이퍼 세정장치용 토출 안정화 노즐에 관한 것이다.The present invention is a discharge stabilizing nozzle for a semiconductor wafer cleaning device that enables uniform and constant spraying by relieving the force and pressure during discharge so as not to damage the pattern on the wafer surface when spraying the SPM compound solution in the semiconductor wafer cleaning device. It's about.

반도체 장치를 제조하기 위한 기판의 세정 공정은 기판 표면에 잔류하는 미립자를 비롯한 금속 불순물, 유기 오염물, 자연 산화막과 같은 표면 피막 등의 다양한 대상물을 제거하기 위하여 실시한다.The cleaning process of a substrate for manufacturing a semiconductor device is performed to remove various objects such as fine particles remaining on the surface of the substrate, metal impurities, organic contaminants, and surface films such as natural oxide films.

통상적으로 세정 공정은 SC1(Standard Cleaning 1; APM-NH4OH와 H2O2 및 H2O가 1:1:5 ∼ 1:4:20의 비로 혼합된 유기물) 용액과 DHF(Diluted HF) 용액을 이용한 화학 세정 공정을 포함한다. 세정 공정은 반도체 장치를 제조하는 총 공정의 약 1／4 ∼ 1／3을 차지하고 있으며, 이것은 세정 횟수뿐만 아니라 각 공정에 적합한 다양한 세정 공정이 요구되고 있다는 것을 의미한다.Typically, the cleaning process is a chemical cleaning process using SC1 (Standard Cleaning 1; APM-NH4OH, organic matter mixed with H2O2 and H2O in a ratio of 1:1:5 to 1:4:20) and DHF (Diluted HF) solution. Includes. The cleaning process accounts for approximately 1/4 to 1/3 of the total process for manufacturing semiconductor devices, which means that not only the number of cleanings but also various cleaning processes suitable for each process are required.

일반적으로 반도체 기판의 습식 세정 장치는, 화학용액이 채워진 세정조(Bath) 내에 복수의 기판을 침지하여 처리하는 방식의 배치식(Batch type)과, 한 장의 기판을 수평으로 배치하여 회전시키면서 처리하는 매엽식(single type)으로 구분된다.In general, wet cleaning devices for semiconductor substrates are of the batch type, which processes multiple substrates by immersing them in a cleaning bath filled with a chemical solution, and the batch type, which processes a single substrate by placing it horizontally and rotating it. It is classified as a single type.

한편, 매엽식 세정 장치는 고속으로 회전하는 기판의 표면에 세정제를 분사하여 원심력으로 기판 표면을 세정하고, 기판 표면에 액상의 이소프로필 알코올(IPA: Isopropyl Alcohol)과 같은 건조액을 이용하여 기판을 건조시키게 된다. 또한, 매엽식 세정장치에서 세정 공정은, RCA 공정, 즉, SC1, SC2(Standard Cleaning 2; (HPMHCl, H2O2 및 H2O가 혼합된 세정제), Piranha(SPM, Sulphuric Peroxide Mixture), DHF(Dilute HF) 약액을 이용하여 기판 표면에서 박막을 제거하고, 파티클을 제거한 후 초순수(DI)로 린스 처리 한 다음 건조 공정을 거치게 된다. 그리고 건조 공정은 일반적으로 고RPM(예를 들어, 1500~2500RPM)으로 기판을 회전시키면서 건조하는 스핀(Spin) 방식과 동시에 기판 표면에 불활성 가스(예를 들어, N2 가스)를 공급하여 건조시키는 방식이 있다.On the other hand, the single-wafer cleaning device sprays a cleaner on the surface of a substrate rotating at high speed, cleans the substrate surface with centrifugal force, and uses a drying liquid such as liquid isopropyl alcohol (IPA) to clean the substrate surface. It is dried. In addition, the cleaning process in the single-wafer cleaning device is the RCA process, that is, SC1, SC2 (Standard Cleaning 2; (cleaning agent mixed with HPMHCl, H2O2, and H2O), Piranha (SPM, Sulfuric Peroxide Mixture), and DHF (Dilute HF) The thin film is removed from the surface of the substrate using a chemical solution, the particles are rinsed with ultrapure water (DI), and then the drying process is performed at a high RPM (for example, 1500 to 2500 RPM). There is a spin method that dries while rotating and a method of drying by simultaneously supplying an inert gas (for example, N2 gas) to the surface of the substrate.

특히, 황산과 과산화수소의 화합용액인 SPM 약액을 사용하는 경우, 고온의 황산에 과산화수소가 혼합되면서 온도가 상승되어 기체화가 되는데, 이로 인해 외부로 토출 및 분사시 큰소리와 함께 강한 타력으로 배출이 되게 된다. 이처럼 배관 또는 노즐에서 혼합이 이루어지면서 발생되는 증기의 타력이 기존의 노즐 내에서는 해소되지 않아, 이러한 SPM 화합용액의 토출 또는 분사시의 타력에 의해 웨이퍼 표면에 패턴손상을 발생시키는 문제가 있었다.In particular, when using SPM chemical solution, which is a combined solution of sulfuric acid and hydrogen peroxide, the temperature rises as hydrogen peroxide is mixed with high-temperature sulfuric acid and vaporizes. As a result, when discharged or sprayed to the outside, it is discharged with a loud noise and strong force. . As such, the coercive force of the steam generated as mixing occurs in the pipe or nozzle is not resolved within the existing nozzle, so there is a problem of pattern damage occurring on the wafer surface due to the coercive force during the discharge or injection of the SPM compound solution.

대한민국 공개특허공보 10-2008-0099625호(2008.11.13.공개)Republic of Korea Patent Publication No. 10-2008-0099625 (published on November 13, 2008) 대한민국 등록특허공보 10-0454637호(2004.10.19.등록)Republic of Korea Patent Publication No. 10-0454637 (registered on October 19, 2004)

본 발명은 상기와 같은 문제점을 해결하기 위해 안출된 것으로서, 본 발명의 목적은 반도체 웨이퍼 세정장치에서 SPM 화합용액을 웨이퍼에 분사하는 분사노즐로서, 노즐 내에서 황산과 과산화수소가 혼합되어 SPM 화합용액으로 분사될때, 상호간 혼합되면서 온도 및 압력이 증가됨에 따라, 분사시 강한 압력, 타력, 소음을 내며 분사됨에 따라, 웨이퍼 표면에 이러한 타력이 그대로 전달되는 직접 토출로 패턴에 손상을 발생시킬 수 있기에, 노즐 내에서 증기홀 확대, SPM홀 확대, 토출홀 확대 등의 다수 부분에서의 구조 변경을 통해, 혼합 후 증기 및 용액의 힘을 분산함으로써, 타력을 분산시킬수 있도록 하는 반도체 웨이퍼 세정장치용 토출 안정화 노즐을 제공하는데 있다.The present invention was created to solve the above problems. The object of the present invention is a spray nozzle for spraying a SPM compound solution onto a wafer in a semiconductor wafer cleaning device. In the nozzle, sulfuric acid and hydrogen peroxide are mixed to form an SPM compound solution. When spraying, as the temperature and pressure increase as they mix with each other, the spray generates strong pressure, force, and noise. As this force is transmitted directly to the wafer surface, damage to the pattern may occur, causing damage to the nozzle pattern. By changing the structure in many parts such as enlarging the vapor hole, enlarging the SPM hole, and enlarging the discharge hole, we have created a discharge stabilization nozzle for a semiconductor wafer cleaning device that disperses the force by dispersing the force of the vapor and solution after mixing. It is provided.

본 발명의 다른 목적 및 장점들은 하기에 설명될 것이며, 본 발명의 실시예에 의해 알게 될 것이다. 또한, 본 발명의 목적 및 장점들은 특허청구범위에 나타낸 수단 및 조합에 의해 실현될 수 있다.Other objects and advantages of the present invention will be explained below and will be learned by practice of the present invention. Additionally, the objects and advantages of the present invention can be realized by the means and combinations indicated in the claims.

본 발명은 상기와 같은 문제점을 해결하기 위한 수단으로서, The present invention is a means to solve the above problems,

반도체 웨이퍼 세정장치에서 SPM 화합용액(C)을 웨이퍼에 분사하는 노즐로서,As a nozzle for spraying SPM compound solution (C) onto the wafer in a semiconductor wafer cleaning device,

상, 하부가 개구되어 있으며, 중단에 격벽(14)이 형성되는 제 1몸체(10);A first body (10) that is open at the top and bottom and has a partition wall (14) formed in the middle;

상기 제 1몸체(10)의 개구된 상부에 끼움결합되어, 격벽(14) 상부에 중공부(11)가 형성되도록 하는 공급커버(20);A supply cover (20) fitted into the open upper part of the first body (10) to form a hollow portion (11) in the upper part of the partition wall (14);

상기 제 1몸체(10)와 공급커버(20) 접촉면에 형성된 공급라인을 따라 회전되면서, 제 1몸체(10) 내부의 중공부(11)로 공급되는 과산화수소(B);Hydrogen peroxide (B) supplied to the hollow portion 11 inside the first body 10 while rotating along the supply line formed on the contact surface of the first body 10 and the supply cover 20;

상기 중공부(11) 내에서 과산화수소(B) 공급방향과 동일한 수평으로 공급되어, 과산화수소(B)와 혼합되면서 SPM 화합용액(C)이 되는 황산(A); Sulfuric acid (A) is supplied horizontally in the same direction as the hydrogen peroxide (B) supply direction within the hollow portion 11 and mixes with hydrogen peroxide (B) to become the SPM compound solution (C);

상기 격벽(14)의 중앙에 수직으로 천공형성되어 SPM 화합용액(C)의 증기가 하부로 토출되도록 하되, 수직 중단부터는 직경이 점차 넓어지며 상협하광(上狹下廣)의 형태로 공간이 확대되어, 증기의 압력이 분산되며 토출시 타력이 감소되도록 하는 증기홀(12);A perforation is formed vertically in the center of the partition wall 14 so that the vapor of the SPM compound solution (C) is discharged to the lower part, and the diameter gradually widens from the vertical stop, expanding the space in the form of an upper and lower beam. a steam hole (12) that distributes the pressure of the steam and reduces the force when discharging;

상기 격벽(14)의 증기홀(12) 주변에 원을 이루며 다수개 수직천공되어 SPM 화합용액(C)이 하부로 토출되도록 하되, 상단에서부터 하단을 향해 직경이 천공길이전체에 걸쳐 직경이 점차 넓어지며 공간이 확대되어, SPM 화합용액(C)의 압력이 분산되며 토출시 타력이 감소되도록 하는 SPM홀(13);A plurality of vertical perforations are formed in a circle around the vapor hole 12 of the partition 14 so that the SPM compound solution (C) is discharged to the bottom, and the diameter gradually widens from the top to the bottom throughout the perforation length. The SPM hole (13) expands the space and distributes the pressure of the SPM compound solution (C) and reduces the force when discharging;

상기 제 1몸체(10)의 하부에 연통연결되며, SPM 화합용액(C)과 증기를 내부에 길이방향으로 형성된 분사라인(32)을 통해 웨이퍼로 분사하는 제 2몸체(30); 로 이루어져,A second body (30) connected to the lower part of the first body (10) and spraying the SPM compound solution (C) and steam onto the wafer through a spray line (32) formed longitudinally therein; Consisting of

SPM 화합용액(C) 분사시, 웨이퍼 표면에 패턴을 손상시키지 않도록, 토출시 타력 및 압력이 해소되어 균일하고 일정하게 분사가 가능토록 하는 것을 특징으로 한다.When spraying the SPM compound solution (C), it is characterized in that the coercive force and pressure are relieved during discharge to prevent damage to the pattern on the wafer surface, thereby enabling uniform and constant spraying.

이상에서 살펴본 바와 같이, 본 발명은 반도체 웨이퍼 세정장치에 사용되는 노즐로서, SPM 화합용액 분사시 직접토출로 인한 웨이퍼 패턴 손상을 사전에 방지할 수 있는 효과가 있다.As discussed above, the present invention is a nozzle used in a semiconductor wafer cleaning device, and has the effect of preventing damage to the wafer pattern due to direct discharge when spraying the SPM compound solution.

또한, 본 발명은 노즐 내부의 여러홀의 형상을 개선하고 크기를 확대함에 따라, 혼합용액 기체의 압력이 풀리면서, 웨이퍼에 손상을 주지 않게 균일하고 일정하게 분사가 가능해지는 효과가 있다.In addition, the present invention has the effect of improving the shape of the various holes inside the nozzle and enlarging the size, thereby releasing the pressure of the mixed solution gas and enabling uniform and constant spraying without damaging the wafer.

반도체 웨이퍼 세정장치에서 SPM 화합용액(C)을 웨이퍼에 분사하는 노즐로서,
상, 하부가 개구되어 있으며, 중단에 격벽(14)이 형성되는 제 1몸체(10);
상기 제 1몸체(10)의 개구된 상부에 끼움결합되어, 격벽(14) 상부에 중공부(11)가 형성되도록 하는 공급커버(20);
상기 제 1몸체(10)와 공급커버(20) 접촉면에 형성된 공급라인을 따라 회전되면서, 제 1몸체(10) 내부의 중공부(11)로 공급되는 과산화수소(B);
상기 중공부(11) 내에서 과산화수소(B) 공급방향과 동일한 수평으로 공급되어, 과산화수소(B)와 혼합되면서 SPM 화합용액(C)이 되는 황산(A);
상기 격벽(14)의 중앙에 수직으로 천공형성되어 SPM 화합용액(C)의 증기가 하부로 토출되도록 하되, 수직 중단부터는 직경이 점차 넓어지며 상협하광(上狹下廣)의 형태로 공간이 확대되어, 증기의 압력이 분산되며 토출시 타력이 감소되도록 하는 증기홀(12);
상기 격벽(14)의 증기홀(12) 주변에 원을 이루며 다수개 수직천공되어 SPM 화합용액(C)이 하부로 토출되도록 하되, 상단에서부터 하단을 향해 직경이 천공길이전체에 걸쳐 직경이 점차 넓어지며 공간이 확대되어, SPM 화합용액(C)의 압력이 분산되며 토출시 타력이 감소되도록 하는 SPM홀(13);
상기 제 1몸체(10)의 하부에 연통연결되며, SPM 화합용액(C)과 증기를 내부에 길이방향으로 형성된 분사라인(32)을 통해 웨이퍼로 분사하는 제 2몸체(30); 로 이루어져,
SPM 화합용액(C) 분사시, 웨이퍼 표면에 패턴을 손상시키지 않도록, 토출시 타력 및 압력이 해소되어 균일하고 일정하게 분사가 가능토록 하는 것을 특징으로 한다.As a nozzle for spraying SPM compound solution (C) onto the wafer in a semiconductor wafer cleaning device,
A first body (10) that is open at the top and bottom and has a partition wall (14) formed in the middle;
A supply cover (20) fitted into the open upper part of the first body (10) to form a hollow portion (11) in the upper part of the partition wall (14);
Hydrogen peroxide (B) supplied to the hollow portion 11 inside the first body 10 while rotating along the supply line formed on the contact surface of the first body 10 and the supply cover 20;
Sulfuric acid (A) is supplied horizontally in the same direction as the hydrogen peroxide (B) supply direction within the hollow portion 11 and mixes with hydrogen peroxide (B) to become the SPM compound solution (C);
A perforation is formed vertically in the center of the partition wall 14 so that the vapor of the SPM compound solution (C) is discharged to the lower part, and the diameter gradually widens from the vertical stop, expanding the space in the form of an upper and lower beam. a steam hole (12) that distributes the pressure of the steam and reduces the force when discharging;
A plurality of vertical perforations are formed in a circle around the vapor hole 12 of the partition 14 so that the SPM compound solution (C) is discharged to the bottom, and the diameter gradually widens from the top to the bottom throughout the perforation length. The SPM hole (13) expands the space and distributes the pressure of the SPM compound solution (C) and reduces the force when discharging;
A second body (30) connected to the lower part of the first body (10) and spraying the SPM compound solution (C) and steam onto the wafer through a spray line (32) formed longitudinally therein; Consists of,
When spraying the SPM compound solution (C), it is characterized in that the coercive force and pressure are relieved during discharge to prevent damage to the pattern on the wafer surface, thereby enabling uniform and constant spraying.

본 발명의 여러 실시예들을 상세히 설명하기 전에, 다음의 상세한 설명에 기재되거나 도면에 도시된 구성요소들의 구성 및 배열들의 상세로 그 응용이 제한되는 것이 아니라는 것을 알 수 있을 것이다. 본 발명은 다른 실시예들로 구현되고 실시될 수 있고 다양한 방법으로 수행될 수 있다. 또, 장치 또는 요소 방향(예를 들어 "전(front)", "후(back)", "위(up)", "아래(down)", "상(top)", "하(bottom)", "좌(left)", "우(right)", "횡(lateral)")등과 같은 용어들에 관하여 본원에 사용된 표현 및 술어는 단지 본 발명의 설명을 단순화하기 위해 사용되고, 관련된 장치 또는 요소가 단순히 특정 방향을 가져야 함을 나타내거나 의미하지 않는다는 것을 알 수 있을 것이다. 또한, "제 1(first)", "제 2(second)"와 같은 용어는 설명을 위해 본원 및 첨부 청구항들에 사용되고 상대적인 중요성 또는 취지를 나타내거나 의미하는 것으로 의도되지 않는다.Before describing the various embodiments of the present invention in detail, it will be appreciated that its application is not limited to the details of the configuration and arrangement of components described in the following detailed description or shown in the drawings. The invention may be embodied and practiced in different embodiments and carried out in various ways. Additionally, device or element orientation (e.g. “front”, “back”, “up”, “down”, “top”, “bottom”). The expressions and predicates used herein with respect to terms such as ", "left", "right", "lateral", etc. are merely used to simplify the description of the invention and related devices. Alternatively, you may notice that it does not simply indicate or imply that an element should have a particular orientation. Additionally, terms such as “first,” “second,” and the like are used herein and in the appended claims for purposes of description and are not intended to indicate or imply relative importance or intent.

본 발명은 상기의 목적을 달성하기 위해 아래의 특징을 갖는다.The present invention has the following features to achieve the above object.

이하 첨부된 도면을 참조로 본 발명의 바람직한 실시예를 상세히 설명하도록 한다. 이에 앞서, 본 명세서 및 청구범위에 사용된 용어나 단어는 통상적이거나 사전적인 의미로 한정해서 해석되어서는 아니되며, 발명자는 그 자신의 발명을 가장 최선의 방법으로 설명하기 위해 용어의 개념을 적절하게 정의할 수 있다는 원칙에 입각하여 본 발명의 기술적 사상에 부합하는 의미와 개념으로 해석되어야만 한다.Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the attached drawings. Prior to this, the terms or words used in this specification and claims should not be construed as limited to their usual or dictionary meanings, and the inventor should appropriately use the concept of terms to explain his or her invention in the best way. It must be interpreted as meaning and concept consistent with the technical idea of the present invention based on the principle of definability.

따라서, 본 명세서에 기재된 실시예와 도면에 도시된 구성은 본 발명의 가장 바람직한 일 실시예에 불과할 뿐이고 본 발명의 기술적 사상을 모두 대변하는 것은 아니므로, 본 출원시점에 있어서 이들을 대체할 수 있는 다양한 균등물과 변형 예들이 있을 수 있음을 이해하여야 한다.Accordingly, the embodiments described in this specification and the configurations shown in the drawings are only one of the most preferred embodiments of the present invention and do not represent the entire technical idea of the present invention, so at the time of filing this application, various alternatives are available to replace them. It should be understood that equivalents and variations may exist.

이하, 도 1 내지 도 3을 참조하여 본 발명의 바람직한 실시예에 따른 반도체 웨이퍼 세정장치용 토출 안정화 노즐을 상세히 설명하도록 한다. Hereinafter, a discharge stabilizing nozzle for a semiconductor wafer cleaning device according to a preferred embodiment of the present invention will be described in detail with reference to FIGS. 1 to 3.

본 발명에 따른 반도체 웨이퍼 세정장치용 토출 안정화 노즐은, 반도체 웨이퍼 세정장치에서 SPM 화합용액(혼합용액, C)을 웨이퍼에 분사하는 노즐로서, 노즐에서 황산(A)(H2O2)과 과산화수소(B)(H2SO4)가 혼합되어 SPM 화합용액(C)으로 분사시, 웨이퍼 표면에 패턴을 손상시키지 않도록, 증기홀(12), SPM홀(13), 토출홀(41)을 통해, 토출시 타력 및 압력이 해소되어 균일하고 일정하게 분사가 가능토록 하는 것으로, 제 1몸체(10), 공급커버(20), SPM(Sulphuric Peroxide Mixture, 황산(A)과 과산화수소(B)의 화합물로써, 반응시 발생되는 액상과 증기로 이루어진다.) 화합용액(C), 증기홀(12), SPM홀(13), 제 2몸체(30)를 포함한다.The discharge stabilizing nozzle for a semiconductor wafer cleaning device according to the present invention is a nozzle that sprays an SPM compound solution (mixed solution, C) onto a wafer in a semiconductor wafer cleaning device. Sulfuric acid (A) (H 2 O 2 ) and hydrogen peroxide are discharged from the nozzle. (B) When (H 2 SO 4 ) is mixed and sprayed with the SPM compound solution (C), it is sprayed through the vapor hole (12), SPM hole (13), and discharge hole (41) to avoid damaging the pattern on the wafer surface. , The coercive force and pressure are relieved during discharge to enable uniform and constant spraying, and the first body 10, supply cover 20, SPM (Sulfuric Peroxide Mixture, a compound of sulfuric acid (A) and hydrogen peroxide (B) (It consists of a liquid phase and vapor generated during reaction.) It includes a compound solution (C), a vapor hole (12), an SPM hole (13), and a second body (30).

상기 제 1몸체(10)는 원형 단면의 몸체이며, 상, 하부가 개구되어 있으며, 중단에 수평으로 격벽(14)이 형성되어, 내부의 공간이 상, 하로 구획되면서 상기 격벽(14)에 형성되는 후술될 증기홀(12)과 SPM홀(13)을 통해 SPM 화합용액(C)이 하부로 이동될 수 있도록 한다.The first body 10 is a body with a circular cross-section and is open at the top and bottom, and a partition wall 14 is formed horizontally in the middle, dividing the internal space into upper and lower parts, which is formed on the partition wall 14. The SPM compound solution (C) is allowed to move downward through the vapor hole 12 and the SPM hole 13, which will be described later.

상기 공급커버(20)는 전술된 제 1몸체(10)의 개구된 상부에 대응되며 끼움결합되어, 상기 공급커버(20)의 상부를 밀폐하면서, 제 1몸체(10)의 격벽(14) 상부에 빈공간인 중공부(11)가 형성되도록 하는 것이다.The supply cover 20 corresponds to and is fitted with the opened upper part of the above-described first body 10, sealing the upper part of the supply cover 20 and forming an upper portion of the partition wall 14 of the first body 10. This is to form a hollow part 11, which is an empty space.

더불어, 제 1몸체(10)와 공급커버(20) 상호간의 접촉면, 즉 제 1몸체(10)의 내주연과 공급커버(20)의 외주연 상호간에는 나사산형태를 가지며 제 1몸체(10)의 상부에서 빈공간인 중공부(11)까지 연결되는 공급라인이 사전에 파여져 형성되어 있도록 한다.In addition, the contact surface between the first body 10 and the supply cover 20, that is, the inner periphery of the first body 10 and the outer periphery of the supply cover 20, has a thread shape and a A supply line connecting from the upper part to the hollow part 11, which is an empty space, is formed by being dug in advance.

이로써, 상기 제 1몸체(10)와 공급커버(20) 접촉면에 형성된 공급라인을 따라 회전되면서, 제 1몸체(10) 내부의 중공부(11)로 과산화수소(B)가 공급되고, 상기 중공부(11) 내에서 과산화수소(B) 공급방향과 동일한 수평(과산화수소(B)가 원형을 이루면서 하단방향으로 회전되면서 중공부(11) 내에서 공급되기에, 중공부(11) 내에서 회오리 형태로 공급됨)으로 황산(A)이 공급되어, 황산(A)과 과산화수소(B)의 혼합물인 SPM 화합용액(C)이 중공부(11) 내에서 만들어지게 된다.Accordingly, hydrogen peroxide (B) is supplied to the hollow portion 11 inside the first body 10 while rotating along the supply line formed on the contact surface of the first body 10 and the supply cover 20, and the hollow portion Horizontal in the same direction as the supply direction of hydrogen peroxide (B) within (11) (since hydrogen peroxide (B) forms a circle and rotates toward the bottom and is supplied within the hollow part (11), it is supplied in the form of a whirlwind within the hollow part (11) ), sulfuric acid (A) is supplied, and the SPM compound solution (C), which is a mixture of sulfuric acid (A) and hydrogen peroxide (B), is created in the hollow portion (11).

물론, 사용자의 다양한 실시예에 따라, 외부로부터 유입되는 황산(A) 및 과산화수소(B)는 공급커버(20)를 관통하여 공급되거나, 제 1몸체(10)를 관통하여 공급되는 등 다양한 형태를 통해 외부로부터 제 1몸체(10)의 중공부(11) 내부로 공급이 되어지도록 할 수 있음이다.Of course, depending on the user's various embodiments, sulfuric acid (A) and hydrogen peroxide (B) flowing in from the outside take various forms, such as being supplied through the supply cover 20 or supplied through the first body 10. This means that supply can be supplied from the outside into the hollow portion 11 of the first body 10.

상기 증기홀(12)은 전술된 제 1몸체(10)의 내부에 수평으로 형성된 격벽(14)의 중앙에, 원형단면의 홀이 수직으로 천공형성되어, SPM 화합용액(C)의 증기가 하부로 토출되도록 하되, 이러한 원형 단면의 홀은 수직 중단부터는 깔때기처럼 직경이 점차 넓어지며 상협하광(上狹下廣)의 형태로 공간이 확대되어, 증기의 압력이 분산되며 토출시 타력이 감소되도록 하는 홀이다.The vapor hole 12 is a circular cross-section hole formed vertically in the center of the partition wall 14 formed horizontally inside the above-described first body 10, so that the vapor of the SPM compound solution (C) flows to the lower part. The hole of this circular cross-section gradually widens in diameter like a funnel from the vertical middle, and the space expands in the form of an upper and lower beam, dispersing the pressure of the steam and reducing the force when discharging. It's a hall.

더불어, 이러한 증기홀(12)의 최하단 직경(D1)은 후술될 SPM홀(13)의 최하단 직경(D2)보다 상대적으로 더 큰 직경이 되도록 형성된다.In addition, the bottom diameter D1 of the steam hole 12 is formed to be relatively larger than the bottom diameter D2 of the SPM hole 13, which will be described later.

상기 SPM홀(13)은 전술된 격벽(14)의 증기홀(12) 주변에 원을 이루며 다수개 수직천공되어 SPM 화합용액(C)이 하부로 토출되도록 하되, 상단에서부터 하단을 향해 직경이 천공길이전체에 걸쳐 직경이 점차 넓어지며 공간이 확대되어, SPM 화합용액(C)의 압력이 분산되며 토출시 타력이 감소되도록 하는 홀이다.The SPM hole 13 forms a circle around the vapor hole 12 of the above-mentioned partition wall 14 and has a plurality of vertical perforations so that the SPM compound solution (C) is discharged to the bottom, and the diameter of the perforation is from the top to the bottom. This hole gradually widens in diameter throughout its length and expands the space, dispersing the pressure of the SPM compound solution (C) and reducing the force when discharging.

상기 제 2몸체(30)는 전술된 제 1몸체(10)의 하부에 연통연결되며, SPM 화합용액(C)과 증기를 내부에 길이방향으로 형성된 분사라인(32)을 통해 웨이퍼로 분사되도록 하는 부분이다. 제 2몸체(30)는 제 1몸체(10)의 하부에 탁탈가능하게 결합되어 일체를 이루며 노즐을 형성하는 것이다.The second body 30 is connected in communication with the lower part of the above-described first body 10, and allows the SPM compound solution (C) and steam to be sprayed onto the wafer through a spray line 32 formed in the longitudinal direction therein. It's part. The second body 30 is detachably coupled to the lower part of the first body 10 and forms an integrated nozzle.

이를 위한 제 2몸체(30)는 상부공간(31), 타력방지 가이드(40), 토출홀(41)을 포함한다.The second body 30 for this includes an upper space 31, an anti-force guide 40, and a discharge hole 41.

상기 상부공간(31)은 제 2몸체(30)의 최상단에서 제 1몸체(10) 개구된 하부와 연통되어지는 홈부분으로서, 상기 제 2몸체(30)의 중앙에 길이방향으로 천공형성된 분사라인(32)과 하부가 연통되며 제 2몸체(30) 최상부에 개구된 공간이다.The upper space 31 is a groove portion that communicates with the opened lower part of the first body 10 at the uppermost end of the second body 30, and is a spray line perforated in the longitudinal direction in the center of the second body 30. (32) and the lower part are in communication with each other and are an open space at the top of the second body (30).

상기 타력방지 가이드(40)는 상부공간(31) 내에, '┖┙' 자 형태로 내설되어, 제 1몸체(10)에서 하부로 토출되는 SPM 화합용액(C)과 증기의 타력을 감소시키는 판이다.The anti-coercive force guide 40 is installed in the upper space 31 in the shape of a '┖┙' shape, and is a plate that reduces the coercive force of the SPM compound solution (C) and steam discharged from the first body 10 to the lower part. am.

상기 토출홀(41)은 전술된 타력방지 가이드(40)에 수직으로 다수 천공형성되어, SPM 화합용액(C)과 증기가 분사라인(32)을 통해 외부로 분사되도록 하되, 수직하방을 향해 직경이 점차 직경이 커지며 천공되어, SPM 화합용액(C)과 증기의 압력이 분산되며 토출시 타력이 감소되도록 하는 홀이다.The discharge holes 41 are formed with a plurality of perforations perpendicular to the above-mentioned anti-force guide 40, so that the SPM compound solution (C) and steam are sprayed to the outside through the spray line 32, and the diameter is directed vertically downward. This hole gradually increases in diameter and is perforated to distribute the pressure of the SPM compound solution (C) and steam and reduce the force when discharging.

이상과 같이, 본 발명은 비록 한정된 실시예와 도면에 의해 설명되었으나, 본 발명은 이것에 의해 한정되지 않으며 본 발명이 속하는 기술 분야에서 통상의 지식을 가진 자에 의해 본 발명의 기술 사상과 아래에 기재될 특허청구범위의 균등범위 내에서 다양한 수정 및 변경이 가능함은 물론이다.As described above, although the present invention has been described with limited examples and drawings, the present invention is not limited thereto, and the technical idea of the present invention and the following will be understood by those skilled in the art to which the present invention pertains. Of course, various modifications and changes are possible within the scope of equivalence of the patent claims to be described.

10: 제 1몸체 11: 중공부
12: 증기홀 13: SPM홀
14: 격벽 20: 공급커버
30: 제 2몸체 31: 상부공간
32: 분사라인 40: 타력방지 가이드
41: 토출홀
A: 황산 B: 과산화수소
C: SPM 화합용액10: First body 11: Hollow part
12: Steam Hall 13: SPM Hall
14: Bulkhead 20: Supply cover
30: second body 31: upper space
32: Spray line 40: Anti-force guide
41: discharge hole
A: Sulfuric acid B: Hydrogen peroxide
C: SPM compound solution

Claims (2)

반도체 웨이퍼 세정장치에서 SPM 화합용액(C)을 웨이퍼에 분사하는 노즐로서,
상, 하부가 개구되어 있으며, 중단에 격벽(14)이 형성되는 제 1몸체(10);
상기 제 1몸체(10)의 개구된 상부에 끼움결합되어, 격벽(14) 상부에 중공부(11)가 형성되도록 하는 공급커버(20);
상기 제 1몸체(10)와 공급커버(20) 접촉면에 형성된 공급라인을 따라 회전되면서, 제 1몸체(10) 내부의 중공부(11)로 공급되는 과산화수소(B);
상기 중공부(11) 내에서 과산화수소(B) 공급방향과 동일한 수평으로 공급되어, 과산화수소(B)와 혼합되면서 SPM 화합용액(C)이 되는 황산(A);
상기 격벽(14)의 중앙에 수직으로 천공형성되어 SPM 화합용액(C)의 증기가 하부로 토출되도록 하되, 수직 중단부터는 직경이 점차 넓어지며 상협하광(上狹下廣)의 형태로 공간이 확대되어, 증기의 압력이 분산되며 토출시 타력이 감소되도록 하는 증기홀(12);
상기 격벽(14)의 증기홀(12) 주변에 원을 이루며 다수개 수직천공되어 SPM 화합용액(C)이 하부로 토출되도록 하되, 상단에서부터 하단을 향해 직경이 천공길이전체에 걸쳐 직경이 점차 넓어지며 공간이 확대되어, SPM 화합용액(C)의 압력이 분산되며 토출시 타력이 감소되도록 하는 SPM홀(13);
상기 제 1몸체(10)의 하부에 연통연결되며, SPM 화합용액(C)과 증기를 내부에 길이방향으로 형성된 분사라인(32)을 통해 웨이퍼로 분사하는 제 2몸체(30); 로 이루어져,
SPM 화합용액(C) 분사시, 웨이퍼 표면에 패턴을 손상시키지 않도록, 토출시 타력 및 압력이 해소되어 균일하고 일정하게 분사가 가능토록 하는 것을 특징으로 하는 반도체 웨이퍼 세정장치용 토출 안정화 노즐.
As a nozzle for spraying SPM compound solution (C) onto the wafer in a semiconductor wafer cleaning device,
A first body (10) that is open at the top and bottom and has a partition wall (14) formed in the middle;
A supply cover (20) fitted into the open upper part of the first body (10) to form a hollow portion (11) in the upper part of the partition wall (14);
Hydrogen peroxide (B) supplied to the hollow portion 11 inside the first body 10 while rotating along the supply line formed on the contact surface of the first body 10 and the supply cover 20;
Sulfuric acid (A) is supplied horizontally in the same direction as the hydrogen peroxide (B) supply direction within the hollow portion 11 and mixes with hydrogen peroxide (B) to become the SPM compound solution (C);
A perforation is formed vertically in the center of the partition wall 14 so that the vapor of the SPM compound solution (C) is discharged to the lower part, and the diameter gradually widens from the vertical stop, expanding the space in the form of an upper and lower beam. a steam hole (12) that distributes the pressure of the steam and reduces the force when discharging;
A plurality of vertical perforations are formed in a circle around the vapor hole 12 of the partition 14 so that the SPM compound solution (C) is discharged to the bottom, and the diameter gradually widens from the top to the bottom throughout the perforation length. The SPM hole (13) expands the space and distributes the pressure of the SPM compound solution (C) and reduces the force when discharging;
A second body (30) connected to the lower part of the first body (10) and spraying the SPM compound solution (C) and steam onto the wafer through a spray line (32) formed longitudinally therein; Consists of,
A discharge stabilizing nozzle for a semiconductor wafer cleaning device, characterized in that when spraying SPM compound solution (C), the coercive force and pressure during discharge are relieved to prevent damage to the pattern on the wafer surface, thereby enabling uniform and constant spraying.
 제 1항에 있어서,
상기 제 2몸체(30)의 분사라인(32)과 연통되며 제 2몸체(30) 최상부에 개구된 형태로 형성되는 상부공간(31);
상기 상부공간(31) 내에, '┖┙' 자 형태로 내설되어, 제 1몸체(10)에서 하부로 토출되는 SPM 화합용액(C)과 SPM 화합용액(C) 증기의 타력을 감소시키는 타력방지 가이드(40);
상기 타력방지 가이드(40)에 수직으로 다수 천공형성되어, SPM 화합용액(C)과 증기가 분사라인(32)을 통해 외부로 분사되도록 하되, 수직하방을 향해 직경이 점차 직경이 커지며 천공되어, SPM 화합용액(C)과 증기의 압력이 분산되며 토출시 타력이 감소되도록 하는 토출홀(41);
이 더 구비되는 것을 특징으로 하는 반도체 웨이퍼 세정장치용 토출 안정화 노즐.
According to clause 1,
an upper space (31) that communicates with the spray line (32) of the second body (30) and is formed in an open shape at the uppermost part of the second body (30);
In the upper space 31, it is installed in the shape of '┖┙', and prevents the thrust to reduce the thrust of the SPM compound solution (C) and the SPM compound solution (C) vapor discharged from the first body 10 to the lower part. guide (40);
A plurality of perforations are formed vertically in the anti-force guide 40, so that the SPM compound solution (C) and steam are sprayed to the outside through the injection line 32, and the diameter gradually increases in the vertical downward direction, A discharge hole (41) that distributes the pressure of the SPM compound solution (C) and steam and reduces the coercive force during discharge;
A discharge stabilizing nozzle for a semiconductor wafer cleaning device further comprising:
KR1020220170448A 2022-12-08 2022-12-08 Discharge stabilization nozzle for semiconductor wafer cleaning equipment KR20240085514A (en)

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100454637B1 (en) 2001-05-18 2004-11-03 주식회사 라셈텍 A Chemical Dispense Nozzle Of A Single Semiconductor Wafer Processor Type
KR20080099625A (en) 2007-05-10 2008-11-13 삼성전자주식회사 A nozzle for supplying solution at semiconductor wafer manufacturing, and apparatus for cleaning wafers

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100454637B1 (en) 2001-05-18 2004-11-03 주식회사 라셈텍 A Chemical Dispense Nozzle Of A Single Semiconductor Wafer Processor Type
KR20080099625A (en) 2007-05-10 2008-11-13 삼성전자주식회사 A nozzle for supplying solution at semiconductor wafer manufacturing, and apparatus for cleaning wafers

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