KR20230046334A - Dental implant fixure and dental implant comprising the same - Google Patents
Dental implant fixure and dental implant comprising the same Download PDFInfo
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- KR20230046334A KR20230046334A KR1020210128507A KR20210128507A KR20230046334A KR 20230046334 A KR20230046334 A KR 20230046334A KR 1020210128507 A KR1020210128507 A KR 1020210128507A KR 20210128507 A KR20210128507 A KR 20210128507A KR 20230046334 A KR20230046334 A KR 20230046334A
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- fixture
- dental implant
- titanium
- semiconductor
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Images
Classifications
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- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61C—DENTISTRY; APPARATUS OR METHODS FOR ORAL OR DENTAL HYGIENE
- A61C8/00—Means to be fixed to the jaw-bone for consolidating natural teeth or for fixing dental prostheses thereon; Dental implants; Implanting tools
- A61C8/0012—Means to be fixed to the jaw-bone for consolidating natural teeth or for fixing dental prostheses thereon; Dental implants; Implanting tools characterised by the material or composition, e.g. ceramics, surface layer, metal alloy
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- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61C—DENTISTRY; APPARATUS OR METHODS FOR ORAL OR DENTAL HYGIENE
- A61C8/00—Means to be fixed to the jaw-bone for consolidating natural teeth or for fixing dental prostheses thereon; Dental implants; Implanting tools
- A61C8/0012—Means to be fixed to the jaw-bone for consolidating natural teeth or for fixing dental prostheses thereon; Dental implants; Implanting tools characterised by the material or composition, e.g. ceramics, surface layer, metal alloy
- A61C8/0013—Means to be fixed to the jaw-bone for consolidating natural teeth or for fixing dental prostheses thereon; Dental implants; Implanting tools characterised by the material or composition, e.g. ceramics, surface layer, metal alloy with a surface layer, coating
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- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61C—DENTISTRY; APPARATUS OR METHODS FOR ORAL OR DENTAL HYGIENE
- A61C8/00—Means to be fixed to the jaw-bone for consolidating natural teeth or for fixing dental prostheses thereon; Dental implants; Implanting tools
- A61C8/0012—Means to be fixed to the jaw-bone for consolidating natural teeth or for fixing dental prostheses thereon; Dental implants; Implanting tools characterised by the material or composition, e.g. ceramics, surface layer, metal alloy
- A61C8/0013—Means to be fixed to the jaw-bone for consolidating natural teeth or for fixing dental prostheses thereon; Dental implants; Implanting tools characterised by the material or composition, e.g. ceramics, surface layer, metal alloy with a surface layer, coating
- A61C8/0015—Means to be fixed to the jaw-bone for consolidating natural teeth or for fixing dental prostheses thereon; Dental implants; Implanting tools characterised by the material or composition, e.g. ceramics, surface layer, metal alloy with a surface layer, coating being a conversion layer, e.g. oxide layer
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- A61C8/0018—Means to be fixed to the jaw-bone for consolidating natural teeth or for fixing dental prostheses thereon; Dental implants; Implanting tools characterised by the shape
- A61C8/0022—Self-screwing
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- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61C—DENTISTRY; APPARATUS OR METHODS FOR ORAL OR DENTAL HYGIENE
- A61C8/00—Means to be fixed to the jaw-bone for consolidating natural teeth or for fixing dental prostheses thereon; Dental implants; Implanting tools
- A61C8/0018—Means to be fixed to the jaw-bone for consolidating natural teeth or for fixing dental prostheses thereon; Dental implants; Implanting tools characterised by the shape
- A61C8/0036—Tooth replica
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- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61L—METHODS OR APPARATUS FOR STERILISING MATERIALS OR OBJECTS IN GENERAL; DISINFECTION, STERILISATION OR DEODORISATION OF AIR; CHEMICAL ASPECTS OF BANDAGES, DRESSINGS, ABSORBENT PADS OR SURGICAL ARTICLES; MATERIALS FOR BANDAGES, DRESSINGS, ABSORBENT PADS OR SURGICAL ARTICLES
- A61L27/00—Materials for grafts or prostheses or for coating grafts or prostheses
- A61L27/02—Inorganic materials
- A61L27/04—Metals or alloys
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Abstract
Description
본 발명은 치과용 임플란트 고정체 및 이를 포함하는 치과용 임플란트에 관한 것이다.The present invention relates to a dental implant fixture and a dental implant comprising the same.
치아용 임플란트(dental implant)는 부분적 또는 전체적으로 치아가 상실된 부분에 식립되어 치아를 대신하는 인공치아 구조 또는 시술 방법을 의미한다. 일반적으로 치과용 임플란트는 인공치근인 임플란트 고정체(fixture)와 지대주(abutment) 및 인공치아인 크라운(crown) 또는 보철물(prosthesis)로 구성된다. 임플란트 고정체는 환자의 치조골에 식립되어 치근의 역할을 하고, 보철물은 누락된 치아의 형상 및 색상과 동일 또는 유사하도록 형성되며 인공치아의 외형을 이루며, 지대주는 보철물을 임플란트 고정체에 고정시키며 보철물에서 작용하는 하중을 임플란트 고정체 및 치조골에 전달하는 역할을 한다.Dental implant (dental implant) refers to an artificial tooth structure or treatment method that is placed in a portion where teeth are partially or wholly lost to replace teeth. In general, dental implants are composed of an implant fixture, which is an artificial tooth root, an abutment, and a crown or prosthesis, which is an artificial tooth. The implant fixture is placed in the alveolar bone of the patient and serves as a root, the prosthesis is formed to be the same or similar to the shape and color of the missing tooth and forms the appearance of the artificial tooth, and the abutment fixes the prosthesis to the implant fixture It plays a role in transmitting the load acting on the implant fixture and alveolar bone.
일반적으로 임플란트 고정체는 인체 내에 삽입 시술되는 관계로 생체적합성이 우수하고 내식성이 뛰어나 부작용, 기타 화학적/생화학적 반응성이 없는 것이어야 하며, 특히, 치과용 임플란트 고정체의 경우 반복되는 하중 및 순간적인 압력의 부과에도 변형 및 파괴되지 않도록 기계적 강도가 매우 높아야 하기 때문에 적당한 소재를 선택하는 것이 매우 중요하다. 현재 널리 사용되는 치과용 임플란트 고정체의 소재로는 가공이 용이할 뿐만 아니라 인간의 생체조직에 대한 높은 생체친화성, 높은 기계적 강도 및 생체 불활성을 갖는 티타늄 또는 티타늄 합금이 있다.In general, implant fixtures are inserted into the human body, so they have excellent biocompatibility and excellent corrosion resistance, so they must have no side effects or other chemical/biochemical reactions. In particular, in the case of dental implant fixtures, repeated loads and instantaneous It is very important to select an appropriate material because the mechanical strength must be very high so that it does not deform or break even when pressure is applied. Currently, materials for dental implant fixtures widely used include titanium or titanium alloys, which are easy to process and have high biocompatibility, high mechanical strength, and bioinertness to human tissues.
그러나 기존의 티타늄 또는 티타늄 합금 등으로 형성된 임플란트 고정체만으로는 치조골에의 결합력이 부족한 문제가 있어 임플란트 고정체의 결합력을 증대시키기 위해서 임플란트 고정체의 표면적을 넓히는 방법이 주로 연구되고 있는데, 티타늄 또는 티타늄 합금 소재의 임플란트 고정체의 경우 임플란트 고정체 표면을 블라스팅(blasting) 및 산 부식처리를 이용하여 거친 표면으로 가공하는 공정이 널리 사용되고 있다. 그러나 이러한 공정은 표면결함에 의해 임플란트 고정체의 파괴강도와 인성이 크게 떨어지는 단점이 있는 바, 임플란트 고정체의 표면 결함을 일으키지 않으면서 치조골과의 결합력을 향상시키는 연구가 필요하다.However, there is a problem in that the bonding force to the alveolar bone is insufficient only with the existing implant fixture formed of titanium or titanium alloy, so a method of increasing the surface area of the implant fixture is mainly studied to increase the bonding force of the implant fixture, titanium or titanium alloy. In the case of an implant fixture made of a material, a process of processing the surface of the implant fixture into a rough surface using blasting and acid corrosion treatment is widely used. However, this process has a disadvantage in that the fracture strength and toughness of the implant fixture are greatly reduced due to surface defects. Therefore, research on improving the bonding force with the alveolar bone without causing surface defects of the implant fixture is needed.
본 발명은 치과용 임플란트 고정체를 제공하는 것을 목적으로 한다.The present invention aims to provide a dental implant fixture.
본 발명은 상기 고정체를 포함하는 치과용 임플란트를 제공하는 것을 목적으로 한다.An object of the present invention is to provide a dental implant comprising the fixture.
1. 외주면에 나사산이 형성된 바디부; 및 상기 바디부의 외주면 상에 위치한 복수층의 반도체층;을 포함하고, 상기 반도체층은 내층이 외층 대비 전도대의 에너지 준위가 낮고, 가전자대의 에너지 준위는 높은 것인, 치과용 임플란트 고정체.1. Body portion with threads formed on the outer circumferential surface; and a plurality of semiconductor layers positioned on an outer circumferential surface of the body, wherein the inner layer of the semiconductor layer has a lower conduction band energy level than the outer layer, and a higher valence band energy level than the outer layer.
2. 위 1에 있어서, 상기 바디부는 티타늄, 티타늄 복합체, 티타늄 합금, 스테인레스 스틸 합금, 코발트-크롬 합금, 알루미나, 지르코니아 및 수산화아파타이트 중 어느 하나의 재질인, 치과용 임플란트 고정체.2. The dental implant fixture according to 1 above, wherein the body is made of any one of titanium, titanium composite, titanium alloy, stainless steel alloy, cobalt-chromium alloy, alumina, zirconia, and hydroxyapatite.
3. 위 1에 있어서, 상기 반도체층의 각 반도체는 티타늄(Ti)과 산소(O), 질소(N), 탄탈럼(Ta), 니오븀(Nb) 또는 하프늄(Hf)의 복합체; 또는 몰리브덴(Mo), 텅스텐(W) 또는 티타늄(Ti)과 황(S) 또는 셀레늄(Se)의 복합체인, 치과용 임플란트 고정체.3. In the above 1, each semiconductor of the semiconductor layer is a composite of titanium (Ti), oxygen (O), nitrogen (N), tantalum (Ta), niobium (Nb), or hafnium (Hf); or a composite of molybdenum (Mo), tungsten (W) or titanium (Ti) and sulfur (S) or selenium (Se), a dental implant fixture.
4. 위 1에 있어서, 상기 반도체층은 내층 및 외층으로 구성되고, 내층은 이산화티타늄 층이고, 외층은 이황화몰리브덴 층인, 치과용 임플란트 고정체.4. The dental implant fixture according to 1 above, wherein the semiconductor layer is composed of an inner layer and an outer layer, the inner layer is a titanium dioxide layer, and the outer layer is a molybdenum disulfide layer.
5. 위 1 내지 4 중 어느 한 항의 고정체; 및 상기 고정체 상에 위치한 인공치아;를 포함하는 치과용 임플란트.5. The fixture of any one of 1 to 4 above; and an artificial tooth positioned on the fixture.
본 발명은 치과용 임플란트 고정체 및 이를 포함하는 치과용 임플란트에 관한 것으로, 상기 고정체는 서로 다른 물질의 반도체가 적층되어, 반도체 간 전하이동으로 고정체 표면이 양전하를 띠므로 음전하를 띠는 치조골세포와의 부착성이 우수하다.The present invention relates to a dental implant fixture and a dental implant including the same, in which semiconductors of different materials are stacked, and the surface of the fixture is positively charged due to charge transfer between the semiconductors, resulting in negatively charged alveolar bone. Excellent adhesion to cells.
도 1은 화학기상증착법에 의한 MoS2 박막 합성과정을 나타낸 것이다.
도 2는 제조예 2에서 합성된 MoS2 박막이다.
도 3은 기판 위에 성장된 MoS2를 볼트에 전사하는 공정을 나타낸 것이다.
도 4는 볼트에 전사된 MoS2를 확인한 것이다.
도 5는 MoS2층이 형성된 볼트에서 세포의 흡착 및 성장 촉진효과를 확인한 것이다.
도 6은 본 발명의 일 실시예에 따른 임플란트 고정체의 반도체층 간 전하 이동 및 이에 따른 효과를 간략하게 나타낸 것이다.Figure 1 shows the MoS 2 thin film synthesis process by chemical vapor deposition.
2 is a MoS 2 thin film synthesized in Preparation Example 2.
3 shows a process of transferring MoS 2 grown on a substrate to a bolt.
4 confirms the MoS 2 transferred to the bolt.
5 confirms the effect of cell adsorption and growth promotion on the bolt where the MoS 2 layer is formed.
6 schematically illustrates charge transfer between semiconductor layers of an implant fixture according to an embodiment of the present invention and effects thereof.
이하, 본 발명을 상세히 설명한다.Hereinafter, the present invention will be described in detail.
본 발명은 치과용 임플란트 고정체에 관한 것이다.The present invention relates to a dental implant fixture.
본 발명은 외주면에 나사산이 형성된 바디부를 포함한다.The present invention includes a body portion with threads formed on an outer circumferential surface.
상기 나사산은 바디부의 외주면에 대해 수직하게 형성되거나 소정 각도로 경사지게 형성될 수 있다.The screw thread may be formed perpendicular to the outer circumferential surface of the body or inclined at a predetermined angle.
상기 나사산의 형태는 다양하게 변경될 수 있다. 예를 들어, 상기 나사산은 한 줄 또는 다줄 형태일 수 있다. 또한, 상기 나사산의 종단면은 예를 들어, 삼각형, 사다리꼴 또는 반원형 형태일 수 있으나, 이에 제한되지 않는다.The shape of the screw thread may be variously changed. For example, the thread may be single or multi-threaded. In addition, the longitudinal section of the screw thread may be, for example, a triangular, trapezoidal or semicircular shape, but is not limited thereto.
상기 바디부의 형태는 이에 제한되지 않으나, 예를 들어, 치조골에 식립되기 용이하도록 하는 측면에서 원추 형태를 가지는 것일 수 있다. The shape of the body portion is not limited thereto, but may have, for example, a conical shape on the side to facilitate insertion into the alveolar bone.
상기 바디부는 예를 들어, 티타늄, 티타늄 복합체, 티타늄 합금, 스테인레스 스틸 합금, 코발트-크롬 합금, 알루미나, 지르코니아 및 수산화아파타이트 중 어느 하나의 재질일 수 있으나 이에 제한되지 않고, 임플란트 소재로 공지된 금속, 세라믹 등의 재질일 수 있다.The body part may be, for example, any one of titanium, titanium composite, titanium alloy, stainless steel alloy, cobalt-chromium alloy, alumina, zirconia, and hydroxyapatite, but is not limited thereto, and metal known as an implant material, It may be a material such as ceramic.
본 발명은 상기 바디부의 외주면에 나사산이 형성되어 바디부의 표면적이 증가되므로 치조골과의 결합력이 향상될 수 있다.In the present invention, since a screw thread is formed on the outer circumferential surface of the body portion to increase the surface area of the body portion, bonding force with the alveolar bone can be improved.
본 발명은 상기 바디부의 외주면 상에 위치한 복수층의 반도체층을 포함한다.The present invention includes a plurality of semiconductor layers positioned on the outer circumferential surface of the body portion.
상기 반도체층은 내층이 외층 대비 전도대의 에너지 준위가 낮고, 가전자대의 에너지 준위는 높다.In the semiconductor layer, the inner layer has a lower conduction band energy level than the outer layer, and a higher valence band energy level.
내층과 외층은 상대적으로 바디부에 근접했는지, 고정체의 표면에 근접했는지 여부를 기준으로 나뉘는 것으로서, 복수층이 있는 경우 바디부에 근접한 층이 그보다는 표면에 근접한 층에 비해 상대적으로 내층에 해당하고, 그 반대의 경우는 상대적으로 외층에 해당한다.The inner layer and the outer layer are classified based on whether they are relatively close to the body or to the surface of the fixture. In the case of multiple layers, the layer closer to the body corresponds to the inner layer relative to the layer closer to the surface. and the opposite case corresponds to the relatively outer layer.
내층이 외층보다 전도대의 에너지 준위가 낮아, 전자가 외층으로부터 내층으로 이동하고, 가전자대의 에너지 준위가 높아, 양성자는 내층으로부터 외층으로 이동하므로, 내층은 음전하를 띠고, 외층은 양전하를 띠게 된다. 치조골과 접하는 외층이 양전하를 띠게 되면서 음전하를 띠는 치조골세포와의 접착력이 향상될 수 있다(도 6).The inner layer has a lower conduction band energy level than the outer layer, so electrons move from the outer layer to the inner layer, and the energy level of the valence band is higher, so protons move from the inner layer to the outer layer, so the inner layer is negatively charged and the outer layer is positively charged. As the outer layer in contact with the alveolar bone becomes positively charged, the adhesion with the negatively charged alveolar bone cells can be improved (FIG. 6).
상기 각 에너지 준위간 갭이 작을수록 전자가 원활하게 이동할 수 있으므로, 반도체층은 2개층인 경우 보다는 각 층간 에너지 준위의 갭이 작아져 그 갭이 계단식으로 되도록 3개 이상의 층인 것이 바람직하다. 이에, 반도체층의 적층 수는 2층 이상, 3층 이상, 4층 이상, 5층 이상 등일 수 있다. 임플란트 고정체로서 환자에 적용하기에 무리가 없다면 그 상한은 제한되지 않으며, 예를 들면 10층, 9층, 8층, 7층, 6층 등일 수 있다.Since electrons can move more smoothly as the gap between each energy level is smaller, it is preferable that the semiconductor layer has three or more layers so that the gap between the energy levels between each layer becomes smaller and the gap becomes cascaded than in the case of two layers. Accordingly, the number of stacked semiconductor layers may be two or more layers, three or more layers, four or more layers, five or more layers, and the like. The upper limit is not limited as long as it is not unreasonable to apply to a patient as an implant fixture, and may be, for example, 10 layers, 9 layers, 8 layers, 7 layers, 6 layers, and the like.
상기 반도체층의 각 반도체는 상기 에너지 준위 차이를 만족할 수 있는 것이라면 그 종류는 제한되지 않으며, 티타늄(Ti)과 산소(O), 질소(N), 탄탈럼(Ta), 니오븀(Nb) 또는 하프늄(Hf)의 복합체; 또는 몰리브덴(Mo), 텅스텐(W) 또는 티타늄(Ti)과 황(S) 또는 셀레늄(Se)의 복합체 등을 사용할 수 있으나 이에 제한되는 것은 아니다.The type of each semiconductor of the semiconductor layer is not limited as long as it can satisfy the energy level difference, and titanium (Ti), oxygen (O), nitrogen (N), tantalum (Ta), niobium (Nb) or hafnium complex of (Hf); Alternatively, a composite of molybdenum (Mo), tungsten (W), or titanium (Ti) and sulfur (S) or selenium (Se) may be used, but is not limited thereto.
상기 반도체는 예를 들어, 이산화티타늄, 질화티타늄, 이황화몰리브덴, 이황화텅스텐, 몰리브덴셀레니엄, 이셀렌화몰리브덴, 이황화티타늄, 이셀렌텅스텐 및 이셀렌티타늄 중 2개 이상의 반도체 조합일 수 있다. 구체적인 예를 들어, 반도체층은 내층 및 외층으로 구성되고 내층은 이산화티타늄 층이고, 외층은 이황화몰리브덴 층일 수 있다.The semiconductor may be, for example, a combination of two or more of titanium dioxide, titanium nitride, molybdenum disulfide, tungsten disulfide, molybdenum selenium, molybdenum diselenide, titanium disulfide, tungsten disulfide, and titanium disulfide. For example, the semiconductor layer may be composed of an inner layer and an outer layer, the inner layer may be a titanium dioxide layer, and the outer layer may be a molybdenum disulfide layer.
상기 반도체층은 당 분야에 공지된 방법으로 형성된 것일 수 있으며, 예를 들어, 진공 증착 공정 또는 반도체 용액 공정으로 형성된 것일 수 있다. 구체적으로 양극산화, 수열 합성법, 스퍼터링, 화학기상증착법, 열증착법, 전자빔증착법으로 형성된 것일 수 있다.The semiconductor layer may be formed by a method known in the art, and may be formed by, for example, a vacuum deposition process or a semiconductor solution process. Specifically, it may be formed by anodic oxidation, hydrothermal synthesis, sputtering, chemical vapor deposition, thermal deposition, or electron beam deposition.
예를 들어, 반도체 층이 이산화티타늄 층이라면 이는 양극산화 또는 스퍼터링 등에 의해 형성될 수 있고, 이때, 반도체층의 표면은 다공성이거나 나노튜브 구조일 수 있다.For example, if the semiconductor layer is a titanium dioxide layer, it may be formed by anodic oxidation or sputtering, and at this time, the surface of the semiconductor layer may be porous or have a nanotube structure.
상기 반도체층의 두께는 예를 들어, 각 층의 두께가 예를 들면 1 nm 내지 10 ㎛ 일 수 있다. 반도체층의 두께는 이에 제한되는 것은 아니나, 상기 범위인 경우, 바디부와 반도체층 및 반도체층 간의 접착성이 좋고, 전하 이동성이 향상되어 세포 접착력이 우수하며, 바디부 원재료의 생체적합성 및 내구성이 저하되지 않을 수 있다. The thickness of the semiconductor layer may be, for example, 1 nm to 10 μm. The thickness of the semiconductor layer is not limited thereto, but in the case of the above range, the adhesion between the body part and the semiconductor layer and the semiconductor layer is good, charge mobility is improved and cell adhesion is excellent, and the biocompatibility and durability of the raw material of the body part are improved. may not deteriorate.
본 발명은 치과용 임플란트에 관한 것이다.The present invention relates to dental implants.
본 발명은 상기 고정체를 포함한다. 고정체는 전술한 바와 같다.The present invention includes the above fixture. The fixture is as described above.
본 발명은 상기 고정체 상에 위치한 인공치아를 포함한다. 상기 인공치아는 부분적 또는 전체적으로 상실된 치아를 대신하는 것으로 예를 들어, 크라운일 수 있으나 이에 제한되는 것은 아니다.The present invention includes an artificial tooth positioned on the fixture. The artificial tooth may be a crown, for example, as a substitute for a partially or entirely lost tooth, but is not limited thereto.
인공치아는 고정체 상에 결합되는 것일 수 있다. 예를 들어, 고정체의 상부 내측에 길이 방향을 따라 암나사부가 형성되고, 인공치아의 하단부에 고정체 내측으로 삽입 결합 가능한 수나사부가 형성되어 결합되는 것일 수 있으나, 이에 제한되는 것은 아니다.The artificial tooth may be coupled to a fixture. For example, a female screw part may be formed along the lengthwise direction on the inside of the upper part of the fixture, and a male screw part may be formed and coupled to the lower end of the artificial tooth to be inserted into the fixture, but is not limited thereto.
본 발명은 지대주를 더 포함할 수 있다.The present invention may further include an abutment.
지대주는 고정체 및 인공치아를 연결하는 것으로, 예를 들어, 지대주는 일부가 고정체 상부 내측 및 인공치아의 하부 내측으로 각각 삽입되어 고정되거나, 고정체 상에 일체로 형성되어 인공치아의 하부 내측에 삽입되는 것일 수 있으나, 이에 제한되는 것은 아니다.The abutment connects the fixture and the artificial tooth. For example, a portion of the abutment is inserted and fixed into the upper inner side of the fixture and the lower inner side of the artificial tooth, respectively, or is integrally formed on the fixture and is integrally formed on the lower inner side of the artificial tooth. It may be inserted into, but is not limited thereto.
이하, 본 발명을 구체적으로 설명하기 위해 실시예를 들어 상세하게 설명하기로 한다. Hereinafter, examples will be described in detail to explain the present invention in detail.
제조예manufacturing example
1. TiO1. TiO 22 층 형성layer formation
Ti-6Al-4V합금으로 볼트를 가공한 후 표면에 플라즈마 전해 산화공정(PEO)을 수행하였다. 에틸-알코올 및 증류수로 초음파 세척하여 시편을 준비하였다. DC 전원을 사용하여 세척된 시편은 양극, 탄소봉은 음극으로 사용하였다. 인가전압 및 처리시간은 280V에서 3분으로 설정하였으며, 실험이 끝난 시편은 에틸-알코올 및 증류수로 세척 후 공기 중에서 건조하였다. PEO 공정에 사용된 전해질은 0.15 M의 calcium acetate monohydrate(Ca(CH3COO)2·H2O)와 0.02 M의 calcium glycerophosphate (C3H7CaO6P)를 혼합하여 제조하였다. After processing the bolts with the Ti-6Al-4V alloy, a plasma electrolytic oxidation process (PEO) was performed on the surface. Specimens were prepared by ultrasonic cleaning with ethyl-alcohol and distilled water. The specimen washed with DC power was used as the anode and the carbon rod as the cathode. The applied voltage and treatment time were set to 3 minutes at 280V, and the tested specimen was washed with ethyl-alcohol and distilled water and dried in the air. The electrolyte used in the PEO process was prepared by mixing 0.15 M calcium acetate monohydrate (Ca(CH3COO)2·H2O) and 0.02 M calcium glycerophosphate (C3H7CaO6P).
2. MoS2.MoS 22 층 형성layer formation
2-1. 화학기상증착법에 의한 MoS2 합성2-1. Synthesis of MoS 2 by chemical vapor deposition
선택적 위치에 MoS2 박막을 성장시키기 위해서 포토리소그라피 공정을 통해 포토레지트로로 패터닝 후 사파이어 기판 위에 Mo를 전자빔증착방법으로 1~10 nm 정도 증착한 후 포토레지스트를 제거하였다. 이후, 직사각형 모양의 Mo 패턴들을 600~800 ℃의 고온에서 유황처리(Sulferiziation)하여 MoS2 박막을 합성하였다(도 1 및 2).In order to grow a MoS 2 thin film at a selective location, after patterning with a photoresist through a photolithography process, Mo was deposited on a sapphire substrate by electron beam deposition to a thickness of about 1 to 10 nm, and then the photoresist was removed. Thereafter, MoS 2 thin films were synthesized by sulfurization of the rectangular Mo patterns at a high temperature of 600 to 800 °C (FIGS. 1 and 2).
2-2. MoS2 전사2-2. MoS 2 transcription
사파이어 기판위에 성장된 MoS2를 폴리머인 폴리메틸 메타크릴레이트 (PMMA)를 이용하여 홀딩하고 BOE에 담아 기판을 제거하였다. 이후, PMMA와 MoS2 박막은 유연한 특성을 가지므로 이를 Di water로 이송하고 TiO2층이 형성된 볼트 위에 용액 상에서 MoS2 박막을 전사하였다(도 3). 볼트에 전사 후 MoS2의 라만 피크를 확인하여 전사가 잘된 것을 알 수 있었다(도 4). 광학 현미경, SEM, 라만 피크를 보면 볼트에 전사후에도 박막이 찢어지거나 또는 광학적 특성이 변하지 않음을 확인할 수 있다. MoS 2 grown on a sapphire substrate was held using a polymer, polymethyl methacrylate (PMMA), and the substrate was removed by placing it in BOE. Thereafter, since the PMMA and MoS 2 thin films have flexible properties, they were transferred to Di water, and the MoS 2 thin films were transferred on the solution on the bolts on which the TiO 2 layer was formed (FIG. 3). After transferring to the bolt, it was confirmed that the transfer was successful by checking the Raman peak of MoS 2 (FIG. 4). Looking at the optical microscope, SEM, and Raman peaks, it can be confirmed that the thin film is not torn or the optical properties are not changed even after transferring to the bolt.
실험예Experimental example
세포 성장 및 흡착 분석 Cell growth and adsorption assays
조골세포와 유사한 MC3T3-E1 세포주는 생쥐의 두개골로부터 추출한 세포주로서 1x105 세포/well 농도로 적절히 분배하였다. 세포를 10% 소태아혈청(Fetal Bovine Serum) 및 10 U/㎖의 페니실린/스트랩토마이신이 보충된 α-MEM (Alpha - minimun essential medium, without L-ascorbic acid)에서 배양하였다. 세포 단층을 phosphate buffered saline(PBS)으로 세척하고, trypsin-DTA용액(0.05% trypsin, 0.53 mM EDTA·4Na, phenol red in HBSS)에서 37 ℃를 유지하며 10분간 배양하여 세포를 분리하였다. 세포를 12-well 플레이트 상에 1.5x105 cells/well의 농도로 반도체층이 형성된 Ti합금(TiO2층+MoS2층 vs TiO2층(비교예)) 표면에 뿌리고 24시간 동안 성장시켰다. 처리된 시편을 PBS로 세척하고 4 ℃에서 12시간 동안 10% 포름알데히드로 고정하였다. 고정된 시편은 50%, 60%, 70%, 80%, 90%, 및 95% 에틸-알코올로 단계적 탈수시켰으며, 고정된 세포의 형태를 알아보기 위해 FE-SEM을 이용하여 관찰하여 세포의 성장을 관찰하였다. 도 5는 24시간 동한 세포를 성장시킨 후 측정한 FE-SEM 이미지로 빨간색 동그라미 부분이 세포로 MoS2층이 없는 시편(비교예)에 비해 MoS2층이 있는 시편 위에 성장된 세포가 현저하게 세포의 흡착 및 성장이 촉진된 것을 확인할 수 있었다.The MC3T3-E1 cell line, which is similar to osteoblasts, is a cell line extracted from the skull of a mouse and appropriately distributed at a concentration of 1x10 5 cells/well. Cells were cultured in α-MEM (Alpha-minimun essential medium, without L-ascorbic acid) supplemented with 10% Fetal Bovine Serum and 10 U/ml penicillin/streptomycin. The cell monolayer was washed with phosphate buffered saline (PBS), and the cells were isolated by culturing in a trypsin-DTA solution (0.05% trypsin, 0.53 mM EDTA 4Na, phenol red in HBSS) at 37 ° C for 10 minutes. The cells were spread on the surface of a Ti alloy (TiO 2 layer + MoS 2 layer vs. TiO 2 layer (Comparative Example)) having a semiconductor layer at a concentration of 1.5x10 5 cells/well on a 12-well plate and grown for 24 hours. The treated specimens were washed with PBS and fixed with 10% formaldehyde at 4 °C for 12 hours. The fixed specimens were dehydrated step by step with 50%, 60%, 70%, 80%, 90%, and 95% ethyl-alcohol, and observed using FE-SEM to determine the morphology of the fixed cells. Growth was observed. Figure 5 is a FE-SEM image measured after growing cells for 24 hours. The red circled area is a cell, and the cells grown on the specimen with the MoS 2 layer are significantly cell compared to the specimen without the MoS 2 layer (Comparative Example). It was confirmed that the adsorption and growth of
Claims (5)
상기 반도체층은 내층이 외층 대비 전도대의 에너지 준위가 낮고, 가전자대의 에너지 준위는 높은 것인, 치과용 임플란트 고정체.
A body portion having threads formed on an outer circumferential surface thereof; And a plurality of semiconductor layers located on the outer circumferential surface of the body portion; includes,
In the semiconductor layer, the inner layer has a lower conduction band energy level than the outer layer, and a higher valence band energy level.
The dental implant fixture of claim 1, wherein the body is made of any one of titanium, titanium composite, titanium alloy, stainless steel alloy, cobalt-chromium alloy, alumina, zirconia, and hydroxyapatite.
The method according to claim 1, wherein each semiconductor of the semiconductor layer is a composite of titanium (Ti) and oxygen (O), nitrogen (N), tantalum (Ta), niobium (Nb) or hafnium (Hf); or a composite of molybdenum (Mo), tungsten (W) or titanium (Ti) and sulfur (S) or selenium (Se), a dental implant fixture.
The dental implant fixture according to claim 1, wherein the semiconductor layer is composed of an inner layer and an outer layer, wherein the inner layer is a titanium dioxide layer and the outer layer is a molybdenum disulfide layer.
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