KR20200001507A - Etchant composition for silver thin layer and ehting method and mehtod for fabrication metal pattern using the same - Google Patents
Etchant composition for silver thin layer and ehting method and mehtod for fabrication metal pattern using the same Download PDFInfo
- Publication number
- KR20200001507A KR20200001507A KR1020190073477A KR20190073477A KR20200001507A KR 20200001507 A KR20200001507 A KR 20200001507A KR 1020190073477 A KR1020190073477 A KR 1020190073477A KR 20190073477 A KR20190073477 A KR 20190073477A KR 20200001507 A KR20200001507 A KR 20200001507A
- Authority
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- South Korea
- Prior art keywords
- acid
- silver
- thin film
- film
- etchant composition
- Prior art date
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- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 title claims abstract description 115
- 229910052709 silver Inorganic materials 0.000 title claims abstract description 103
- 239000004332 silver Substances 0.000 title claims abstract description 103
- 239000000203 mixture Substances 0.000 title claims abstract description 71
- 238000000034 method Methods 0.000 title claims description 38
- 229910052751 metal Inorganic materials 0.000 title claims description 16
- 239000002184 metal Substances 0.000 title claims description 16
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000010409 thin film Substances 0.000 claims abstract description 66
- 150000007524 organic acids Chemical class 0.000 claims abstract description 36
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 claims abstract description 16
- 150000003839 salts Chemical class 0.000 claims abstract description 16
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 12
- CSNNHWWHGAXBCP-UHFFFAOYSA-L Magnesium sulfate Chemical compound [Mg+2].[O-][S+2]([O-])([O-])[O-] CSNNHWWHGAXBCP-UHFFFAOYSA-L 0.000 claims abstract description 10
- 125000004432 carbon atom Chemical group C* 0.000 claims abstract description 10
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910017604 nitric acid Inorganic materials 0.000 claims abstract description 9
- JTNCEQNHURODLX-UHFFFAOYSA-N 2-phenylethanimidamide Chemical compound NC(=N)CC1=CC=CC=C1 JTNCEQNHURODLX-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910000343 potassium bisulfate Inorganic materials 0.000 claims abstract description 6
- 229910052943 magnesium sulfate Inorganic materials 0.000 claims abstract description 5
- 235000019341 magnesium sulphate Nutrition 0.000 claims abstract description 5
- WBHQBSYUUJJSRZ-UHFFFAOYSA-M sodium bisulfate Chemical compound [Na+].OS([O-])(=O)=O WBHQBSYUUJJSRZ-UHFFFAOYSA-M 0.000 claims abstract description 5
- 229910000342 sodium bisulfate Inorganic materials 0.000 claims abstract description 5
- 239000010408 film Substances 0.000 claims description 83
- 238000005530 etching Methods 0.000 claims description 59
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 18
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 16
- 229910001316 Ag alloy Inorganic materials 0.000 claims description 15
- -1 alkyl sulfonic acid Chemical compound 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 15
- 239000010410 layer Substances 0.000 claims description 10
- 239000002253 acid Substances 0.000 claims description 9
- AFVFQIVMOAPDHO-UHFFFAOYSA-N Methanesulfonic acid Chemical compound CS(O)(=O)=O AFVFQIVMOAPDHO-UHFFFAOYSA-N 0.000 claims description 8
- 235000005985 organic acids Nutrition 0.000 claims description 7
- AEMRFAOFKBGASW-UHFFFAOYSA-N Glycolic acid Chemical compound OCC(O)=O AEMRFAOFKBGASW-UHFFFAOYSA-N 0.000 claims description 6
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims description 6
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 6
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 claims description 6
- 239000002356 single layer Substances 0.000 claims description 6
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 5
- NIXOWILDQLNWCW-UHFFFAOYSA-N Acrylic acid Chemical compound OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 4
- FERIUCNNQQJTOY-UHFFFAOYSA-N Butyric acid Chemical compound CCCC(O)=O FERIUCNNQQJTOY-UHFFFAOYSA-N 0.000 claims description 4
- RGHNJXZEOKUKBD-SQOUGZDYSA-N D-gluconic acid Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C(O)=O RGHNJXZEOKUKBD-SQOUGZDYSA-N 0.000 claims description 4
- NQPDZGIKBAWPEJ-UHFFFAOYSA-N Valeric acid Natural products CCCCC(O)=O NQPDZGIKBAWPEJ-UHFFFAOYSA-N 0.000 claims description 4
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 claims description 4
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 4
- 229940098779 methanesulfonic acid Drugs 0.000 claims description 4
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 claims description 4
- YGSDEFSMJLZEOE-UHFFFAOYSA-N salicylic acid Chemical compound OC(=O)C1=CC=CC=C1O YGSDEFSMJLZEOE-UHFFFAOYSA-N 0.000 claims description 4
- KRKNYBCHXYNGOX-UHFFFAOYSA-K Citrate Chemical compound [O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O KRKNYBCHXYNGOX-UHFFFAOYSA-K 0.000 claims description 3
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 claims description 3
- 239000004310 lactic acid Substances 0.000 claims description 3
- 235000014655 lactic acid Nutrition 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims description 3
- 239000011975 tartaric acid Substances 0.000 claims description 3
- 235000002906 tartaric acid Nutrition 0.000 claims description 3
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 claims description 2
- RBNPOMFGQQGHHO-UHFFFAOYSA-N -2,3-Dihydroxypropanoic acid Natural products OCC(O)C(O)=O RBNPOMFGQQGHHO-UHFFFAOYSA-N 0.000 claims description 2
- WXHLLJAMBQLULT-UHFFFAOYSA-N 2-[[6-[4-(2-hydroxyethyl)piperazin-1-yl]-2-methylpyrimidin-4-yl]amino]-n-(2-methyl-6-sulfanylphenyl)-1,3-thiazole-5-carboxamide;hydrate Chemical compound O.C=1C(N2CCN(CCO)CC2)=NC(C)=NC=1NC(S1)=NC=C1C(=O)NC1=C(C)C=CC=C1S WXHLLJAMBQLULT-UHFFFAOYSA-N 0.000 claims description 2
- ZMPRRFPMMJQXPP-UHFFFAOYSA-N 2-sulfobenzoic acid Chemical compound OC(=O)C1=CC=CC=C1S(O)(=O)=O ZMPRRFPMMJQXPP-UHFFFAOYSA-N 0.000 claims description 2
- SDGNNLQZAPXALR-UHFFFAOYSA-N 3-sulfophthalic acid Chemical compound OC(=O)C1=CC=CC(S(O)(=O)=O)=C1C(O)=O SDGNNLQZAPXALR-UHFFFAOYSA-N 0.000 claims description 2
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 claims description 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 claims description 2
- 239000005711 Benzoic acid Substances 0.000 claims description 2
- RGHNJXZEOKUKBD-UHFFFAOYSA-N D-gluconic acid Natural products OCC(O)C(O)C(O)C(O)C(O)=O RGHNJXZEOKUKBD-UHFFFAOYSA-N 0.000 claims description 2
- RBNPOMFGQQGHHO-UWTATZPHSA-N D-glyceric acid Chemical compound OC[C@@H](O)C(O)=O RBNPOMFGQQGHHO-UWTATZPHSA-N 0.000 claims description 2
- ODBLHEXUDAPZAU-ZAFYKAAXSA-N D-threo-isocitric acid Chemical compound OC(=O)[C@H](O)[C@@H](C(O)=O)CC(O)=O ODBLHEXUDAPZAU-ZAFYKAAXSA-N 0.000 claims description 2
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 claims description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 2
- AEMRFAOFKBGASW-UHFFFAOYSA-M Glycolate Chemical compound OCC([O-])=O AEMRFAOFKBGASW-UHFFFAOYSA-M 0.000 claims description 2
- ODBLHEXUDAPZAU-FONMRSAGSA-N Isocitric acid Natural products OC(=O)[C@@H](O)[C@H](C(O)=O)CC(O)=O ODBLHEXUDAPZAU-FONMRSAGSA-N 0.000 claims description 2
- JVTAAEKCZFNVCJ-UHFFFAOYSA-M Lactate Chemical compound CC(O)C([O-])=O JVTAAEKCZFNVCJ-UHFFFAOYSA-M 0.000 claims description 2
- OFOBLEOULBTSOW-UHFFFAOYSA-L Malonate Chemical compound [O-]C(=O)CC([O-])=O OFOBLEOULBTSOW-UHFFFAOYSA-L 0.000 claims description 2
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 claims description 2
- ULUAUXLGCMPNKK-UHFFFAOYSA-N Sulfobutanedioic acid Chemical compound OC(=O)CC(C(O)=O)S(O)(=O)=O ULUAUXLGCMPNKK-UHFFFAOYSA-N 0.000 claims description 2
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 claims description 2
- 235000010233 benzoic acid Nutrition 0.000 claims description 2
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 claims description 2
- 235000019253 formic acid Nutrition 0.000 claims description 2
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- 239000000174 gluconic acid Substances 0.000 claims description 2
- 235000012208 gluconic acid Nutrition 0.000 claims description 2
- NBZBKCUXIYYUSX-UHFFFAOYSA-N iminodiacetic acid Chemical compound OC(=O)CNCC(O)=O NBZBKCUXIYYUSX-UHFFFAOYSA-N 0.000 claims description 2
- 159000000003 magnesium salts Chemical class 0.000 claims description 2
- 239000001630 malic acid Substances 0.000 claims description 2
- 235000011090 malic acid Nutrition 0.000 claims description 2
- 235000006408 oxalic acid Nutrition 0.000 claims description 2
- FJKROLUGYXJWQN-UHFFFAOYSA-N papa-hydroxy-benzoic acid Natural products OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 claims description 2
- XAEFZNCEHLXOMS-UHFFFAOYSA-M potassium benzoate Chemical compound [K+].[O-]C(=O)C1=CC=CC=C1 XAEFZNCEHLXOMS-UHFFFAOYSA-M 0.000 claims description 2
- 229960004889 salicylic acid Drugs 0.000 claims description 2
- 159000000000 sodium salts Chemical class 0.000 claims description 2
- ODBLHEXUDAPZAU-UHFFFAOYSA-N threo-D-isocitric acid Natural products OC(=O)C(O)C(C(O)=O)CC(O)=O ODBLHEXUDAPZAU-UHFFFAOYSA-N 0.000 claims description 2
- TYHJXGDMRRJCRY-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) tin(4+) Chemical compound [O-2].[Zn+2].[Sn+4].[In+3] TYHJXGDMRRJCRY-UHFFFAOYSA-N 0.000 claims description 2
- RRXWRHLYVPTSIF-UHFFFAOYSA-N 2-hydroxypropane-1,2,3-tricarboxylic acid;silver Chemical compound [Ag].OC(=O)CC(O)(C(O)=O)CC(O)=O RRXWRHLYVPTSIF-UHFFFAOYSA-N 0.000 claims 1
- 229910021653 sulphate ion Inorganic materials 0.000 abstract description 3
- 150000008052 alkyl sulfonates Chemical class 0.000 abstract 2
- 230000000052 comparative effect Effects 0.000 description 27
- 229920002120 photoresistant polymer Polymers 0.000 description 10
- 230000001965 increasing effect Effects 0.000 description 6
- 238000011282 treatment Methods 0.000 description 6
- 239000008367 deionised water Substances 0.000 description 5
- 229910021641 deionized water Inorganic materials 0.000 description 5
- 230000007547 defect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 238000005259 measurement Methods 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 239000004148 curcumin Substances 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 description 2
- 239000011343 solid material Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 1
- VCUFZILGIRCDQQ-KRWDZBQOSA-N N-[[(5S)-2-oxo-3-(2-oxo-3H-1,3-benzoxazol-6-yl)-1,3-oxazolidin-5-yl]methyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C1O[C@H](CN1C1=CC2=C(NC(O2)=O)C=C1)CNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F VCUFZILGIRCDQQ-KRWDZBQOSA-N 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229910052774 Proactinium Inorganic materials 0.000 description 1
- JAWMENYCRQKKJY-UHFFFAOYSA-N [3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-ylmethyl)-1-oxa-2,8-diazaspiro[4.5]dec-2-en-8-yl]-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]methanone Chemical compound N1N=NC=2CN(CCC=21)CC1=NOC2(C1)CCN(CC2)C(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F JAWMENYCRQKKJY-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- VNDFJLWORZGXBJ-UHFFFAOYSA-L disodium 3-carboxy-3-hydroxypentanedioate propanedioic acid Chemical compound C(CC(O)(C(=O)O)CC(=O)[O-])(=O)[O-].[Na+].C(CC(=O)O)(=O)O.[Na+] VNDFJLWORZGXBJ-UHFFFAOYSA-L 0.000 description 1
- CCIVGXIOQKPBKL-UHFFFAOYSA-M ethanesulfonate Chemical compound CCS([O-])(=O)=O CCIVGXIOQKPBKL-UHFFFAOYSA-M 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000002070 nanowire Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- KCXFHTAICRTXLI-UHFFFAOYSA-N propane-1-sulfonic acid Chemical compound CCCS(O)(=O)=O KCXFHTAICRTXLI-UHFFFAOYSA-N 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- 229910001961 silver nitrate Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/30—Acidic compositions for etching other metallic material
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/02—Local etching
Abstract
Description
본 발명은 은 박막 식각액 조성물, 이를 이용한 식각 방법 및 금속 패턴의 형성 방법에 관한 것이다.The present invention relates to a silver thin film etchant composition, an etching method using the same and a method of forming a metal pattern.
본격적인 정보화 시대로 접어들게 됨에 따라 대량의 정보를 처리 및 표시하는 디스플레이 분야가 급속도로 발전해 왔으며, 이에 부응하여 다양한 평판 디스플레이가 개발되어 각광받고 있다.As the information age enters a full-fledged period, the display field for processing and displaying a large amount of information has been rapidly developed, and various flat panel displays have been developed and attracted the spotlight.
이러한 평판디스플레이 장치의 예로는 액정디스플레이장치(Liquid crystal display device: LCD), 플라즈마디스플레이장치(Plasma Display Panel device: PDP), 전계방출디스플레이장치(Field Emission Display device: FED), 전기발광디스플레이장치(Electroluminescence Display device: ELD), 유기발광디스플레이(Organic Light Emitting Diodes: OLED) 등을 들 수 있으며, 이러한 평판디스플레이 장치는 텔레비전이나 비디오 등의 가전분야뿐만 아니라 노트북과 같은 컴퓨터 및 핸드폰 등에 다양한 용도로 사용되고 있다. 이들 평판디스플레이 장치는 박형화, 경량화, 및 저소비전력화 등의 우수한 성능으로 인하여 기존에 사용되었던 브라운관(Cathode Ray Tube: NIT)을 빠르게 대체하고 있는 실정이다. Examples of such a flat panel display device include a liquid crystal display device (LCD), a plasma display panel device (PDP), a field emission display device (FED), and an electroluminescence display device (Electroluminescence). Display device (ELD), Organic Light Emitting Diodes (OLED), and the like, and such a flat panel display device is used for various purposes such as a computer and a mobile phone as well as a home appliance field such as a television or a video. These flat panel display devices are rapidly replacing conventional cathode ray tubes (NITs) due to their excellent performance such as thinning, weight reduction, and low power consumption.
특히 OLED는 소자 자체적으로 빛을 발광하며 저전압에서도 구동될 수 있기 때문에 최근 휴대기기 등의 소형 디스플레이 시장에 빠르게 적용되고 있다. 또한 OLED는 소형 디스플레이를 넘어서 대형 TV의 상용화를 목전에 둔 상태이다.In particular, since OLEDs emit light by themselves and can be driven at low voltages, OLEDs are rapidly being applied to small display markets such as mobile devices. OLED is also expected to commercialize large TV beyond small display.
한편, 산화주석인듐(Indium Tin Oxide, ITO)과 산화아연인듐(Indium Zinc Oxide, IZO)과 같은 도전성 금속은 빛에 대한 투과율이 비교적 뛰어나고, 도전성을 가지므로 평판디스플레이장치에 사용되는 칼라필터의 전극으로 널리 쓰이고 있다. 그러나 이들 금속들 또한 높은 저항을 가져 응답속도의 개선을 통한 평판표시장치의 대형화 및 고해상도 실현에 장애가 되고 있다.On the other hand, conductive metals such as indium tin oxide (ITO) and indium zinc oxide (IZO) have relatively high transmittance to light and have conductivity, so that the color filter electrodes used in flat panel display devices It is widely used. However, these metals also have high resistance, which hinders the enlargement of the flat panel display device and the high resolution.
또한, 반사판의 경우 과거 알루미늄(Al) 반사판을 주로 제품에 이용해왔으나, 휘도 향상을 통한 저전력 소비실현을 위해서는 반사율이 더 높은 금속으로의 재료변경을 모색하고 있는 상태이다. 이를 위해 평판디스플레이장치에 적용되고 있는 금속들에 비해 낮은 비저항과 높은 휘도를 가지고 있는 은(Ag: 비저항 약 1.59μΩ㎝)막, 은합금 또는 이를 포함한 다층막을 칼라필터의 전극, LCD 또는 OLED 배선 및 반사판에 적용, 평판표시장치의 대형화와 고 해상도 및 저전력 소비 등을 실현하고자 하여, 이 재료의 적용을 위한 식각액의 개발이 요구되었다.In addition, in the case of the reflector, aluminum (Al) reflector has been mainly used in products in the past, but in order to realize low power consumption through improved brightness, the state of seeking a material change to a metal having a higher reflectance is being sought. To this end, silver (Ag: 1.59 μΩcm resistivity) film, silver alloy, or a multilayer film including the same, which has a lower resistivity and higher brightness than metals applied to a flat panel display device, may be used as a color filter electrode, LCD or OLED wiring, In order to realize a large-sized flat panel display device, high resolution, and low power consumption, it is required to develop an etching solution for the application of the material.
그러나, 은(Ag)은 유리 등의 절연 기판 또는 진성 비정질 규소나 도핑된 비정질 규소 등으로 이루어진 반도체 기판 등의 하부 기판에 대해 접착성(adhesion)이 극히 불량하여 증착이 용이하지 않고, 배선의 들뜸(lifting) 또는 벗겨짐(Peeling)이 쉽게 유발된다. 또한, 은(Ag)도전층이 기판에 증착된 경우에도 이를 패터닝하기 위해 식각액을 사용하게 된다. 이러한 식각액으로서 종래의 식각액을 사용하는 경우 은(Ag)이 과도하게 식각되거나, 불균일하게 식각되어 배선의 들뜸 또는 벗겨짐 현상이 발생하고, 배선의 측면 프로파일이 불량하게 된다.However, silver (Ag) is extremely poor in adhesion to an insulating substrate such as glass or a lower substrate such as a semiconductor substrate made of intrinsic amorphous silicon, doped amorphous silicon, or the like, so that deposition is not easy and the wiring is lifted. Lifting or peeling is easily caused. In addition, even when a silver (Ag) conductive layer is deposited on a substrate, an etchant is used to pattern it. When a conventional etchant is used as such an etchant, silver (Ag) may be excessively etched or etched unevenly to cause lifting or peeling of the wiring, resulting in poor side profile of the wiring.
또한 고해상도 구현을 위한 낮은 스큐(LOW Skew)구현이 공정을 하는데 있어 어려움이 있다.In addition, a low skew for high resolution is difficult to process.
특히, 은(Ag)은 쉽게 환원이 되는 금속으로 식각 속도가 빨라야 잔사 유발 없이 식각이 되게 되는데 이때 식각 속도가 빨라 상하부 간 식각 속도의 차이가 발생하지 않아 식각 후 테이퍼 각(taper angle) 형성이 어렵고 식각 패턴의 직진성 확보에 어려움이 있어서, 배선 및 패턴 형성 시 많은 한계점을 가지고 있다. Particularly, silver (Ag) is a metal that can be easily reduced, so that the etching speed is faster without inducing residue, but the etching speed is high, so the difference in the etching speed between upper and lower parts does not occur, making it difficult to form a taper angle after etching. Since it is difficult to secure the straightness of the etching pattern, there are many limitations in wiring and pattern formation.
금속막이 테이퍼 각(taper angle) 없이 수직으로 서 있는 경우, 후속 공정에서 절연막 또는 후속 배선 형성 시 은(Ag)과 절연막 또는 배선 사이에 공극이 발생 할 수 있으며, 이러한 공극 발생은 전기적 쇼트 등 불량 발생의 원인이 된다.If the metal film is standing vertically without a taper angle, voids may occur between silver (Ag) and the insulating film or wiring during the formation of the insulating film or the subsequent wiring in a subsequent process, and such voids may cause defects such as an electrical short. Cause.
대한민국 공개특허 제10-2013-0130515호는 은 함유 패턴의 식각액에 관한 것으로, 은(Ag) 또는 은 합금으로 이루어진 단일막, 및 상기 단일막과 투명전도막으로 구성되는 다층막을 동시에 식각할 수 있는 식각액 조성물을 개시하고 있으나, 당해 기술분야의 주요한 문제점인 잔사 및 은 재흡착 문제와 처리매수 증가에 따른 식각액 조성물의 성능 저하 문제를 완전히 해결하고 있지 못한 실정이다.Republic of Korea Patent Publication No. 10-2013-0130515 relates to the etching liquid of the silver-containing pattern, it is possible to simultaneously etch a single film made of silver (Ag) or a silver alloy, and a multilayer film composed of the single film and the transparent conductive film. Although an etchant composition has been disclosed, it is a situation that does not completely solve the problem of deterioration of the etchant composition due to the resorption of residues and silver and the number of treatments, which are major problems in the art.
본 발명은 상술한 종래 기술의 문제점을 개선하기 위한 것으로, 은(Ag) 또는 은 합금으로 이루어진 단일막 및 상기 단일막과 투명전도막으로 구성되는 다층막의 식각에 사용되며, 잔사(예를 들어, 은 잔사 및/또는 투명전도막 잔사 등) 및 은 재흡착 문제가 발생하지 않는 것을 특징으로 하는 은 박막 식각액 조성물을 제공하는 것을 목적으로 한다.The present invention is to improve the above-described problems of the prior art, is used for etching a single film made of silver (Ag) or a silver alloy and a multilayer film composed of the single film and the transparent conductive film, and the residue (for example, It is an object of the present invention to provide a silver thin film etchant composition characterized in that no silver residue and / or transparent conductive film residue, etc.) and silver resorption problems occur.
또한, 본 발명은 상기 단일막 및 상기 다층막을 동시에 식각할 수 있는 은 박막 식각액 조성물을 제공하는 것을 목적으로 한다.Another object of the present invention is to provide a silver thin film etchant composition capable of simultaneously etching the single film and the multilayer film.
또한, 본 발명은 식각 속도의 제어를 통해 side etch를 조절할 수 있는 은 박막 식각액 조성물을 제공하는 것을 목적으로 한다.In addition, an object of the present invention is to provide a silver thin film etchant composition that can adjust the side etch through the control of the etching rate.
또한, 본 발명은 하부막의 손상 없이 식각 균일성을 나타내는 습식 식각에 유용하게 사용될 수 있는 은 박막 식각액 조성물을 제공하는 것을 목적으로 한다.In addition, an object of the present invention is to provide a silver thin film etchant composition that can be usefully used for wet etching showing etching uniformity without damaging the underlying film.
또한, 본 발명은 처리매수 증가에도 식각 성능이 유지되어 side etch 조절이 용이한 은 박막 식각액 조성물을 제공하는 것을 목적으로 한다.In addition, an object of the present invention is to provide a silver thin film etchant composition that is easy to control the side etch by the etching performance is maintained even with increasing the number of treatment.
또한, 본 발명은 상기 은 박막 식각액 조성물을 이용하는 식각 방법을 제공하는 것을 목적으로 한다.In addition, an object of the present invention is to provide an etching method using the silver thin film etchant composition.
또한, 본 발명은 상기 은 박막 식각액 조성물을 이용하는 금속 패턴의 형성 방법을 제공하는 것을 목적으로 한다.In addition, an object of the present invention is to provide a method of forming a metal pattern using the silver thin film etchant composition.
상기 목적을 달성하기 위해, 본 발명은, 조성물 총 중량에 대하여, (A) 질산 7 내지 15 중량%; (B-1) 탄소수 1 내지 3의 알킬술폰산 3 내지 8 중량%; (B-2) 알킬술폰산 외 유기산 25 내지 65 중량%; (C) 유기산의 염 0.1 내지 7 중량%; (D) 황산염 5 내지 25 중량%; 및 (E) 물 잔량을 포함하고, 상기 (D) 황산염은 중황산칼륨, 중황산나트륨 및 황산마그네슘으로 이루어진 군으로부터 선택되는 1종 이상을 포함하는 것을 특징으로 하는 은 박막 식각액 조성물을 제공한다.In order to achieve the above object, the present invention, the total weight of the composition, (A) 7 to 15% by weight nitric acid; (B-1) 3 to 8% by weight of alkyl sulfonic acid having 1 to 3 carbon atoms; (B-2) 25 to 65% by weight of an organic acid other than alkylsulfonic acid; (C) 0.1 to 7% by weight of salt of organic acid; (D) 5-25 wt% sulfate; And (E) water residual amount, wherein (D) sulfate provides at least one selected from the group consisting of potassium bisulfate, sodium bisulfate and magnesium sulfate.
또한, 본 발명은, 상기 은 박막 식각액 조성물을 사용하는 식각 방법을 제공한다.In addition, the present invention provides an etching method using the silver thin film etchant composition.
또한, 본 발명은 상기 은 박막 식각액 조성물을 사용하는 금속 패턴의 형성 방법을 제공한다.In addition, the present invention provides a method of forming a metal pattern using the silver thin film etchant composition.
본 발명의 은 박막 식각액 조성물은 은(Ag) 또는 은 합금으로 이루어진 단일막 및 상기 단일막과 투명전도막으로 구성되는 다층막의 식각에 사용되어, 잔사(예를 들어, 은 잔사 및/또는 투명전도막 잔사 등) 및 은 재흡착 문제가 발생하지 않는 효과를 제공한다.The silver thin film etchant composition of the present invention is used for etching a single film made of silver (Ag) or a silver alloy and a multilayer film composed of the single film and the transparent conductive film, thereby providing a residue (for example, silver residue and / or transparent conductivity). Membrane residues, etc.) and silver resorption problems.
또한, 본 발명의 은 박막 식각액 조성물은 상기 단일막 및 상기 다층막을 동시에 식각하여, 식각 효율을 향상시키는 효과를 제공한다.In addition, the silver thin film etchant composition of the present invention provides an effect of improving the etching efficiency by simultaneously etching the single film and the multilayer film.
또한, 본 발명의 은 박막 식각액 조성물은 etch stop 현상을 발생시켜, 식각 속도를 제어하고, side etch를 조절할 수 있는 효과를 제공한다.In addition, the silver thin film etchant composition of the present invention generates an etch stop phenomenon, thereby providing an effect of controlling the etching rate and adjusting the side etch.
또한, 본 발명의 은 박막 식각액 조성물은 하부막의 손상 없이 식각 균일성을 나타내는 습식 식각에 유용하게 사용될 수 있다.In addition, the silver thin film etchant composition of the present invention may be usefully used for wet etching showing etching uniformity without damaging the underlying film.
본 발명은, 조성물 총 중량에 대하여, (A) 질산 7 내지 15 중량%; (B-1) 탄소수 1 내지 3의 알킬술폰산 3 내지 8 중량%; (B-2) 알킬술폰산 외 유기산 25 내지 65 중량%; (C) 유기산의 염 0.1 내지 7 중량%; (D) 황산염 5 내지 25 중량%; 및 (E) 물 잔량을 포함하고, 상기 (D) 황산염은 중황산칼륨, 중황산나트륨 및 황산마그네슘으로 이루어진 군으로부터 선택되는 1종 이상을 포함하는 것을 특징으로 하는 은 박막 식각액 조성물을 제공한다.The present invention, based on the total weight of the composition, (A) 7 to 15% by weight nitric acid; (B-1) 3 to 8% by weight of alkyl sulfonic acid having 1 to 3 carbon atoms; (B-2) 25 to 65% by weight of an organic acid other than alkylsulfonic acid; (C) 0.1 to 7% by weight of salt of organic acid; (D) 5-25 wt% sulfate; And (E) water residual amount, wherein (D) sulfate provides at least one selected from the group consisting of potassium bisulfate, sodium bisulfate and magnesium sulfate.
본 발명의 은 박막 식각액 조성물은 은(Ag) 또는 은 합금으로 이루어진 단일막 및 상기 단일막과 투명전도막으로 구성되는 다층막의 식각에 사용될 수 있으며, 잔사(예를 들어, 은 잔사 및/또는 투명전도막 잔사 등) 및 은 재흡착 문제가 발생하지 않는 것을 특징으로 한다.The silver thin film etchant composition of the present invention may be used for etching a single film made of silver (Ag) or a silver alloy and a multilayer film made of the single film and the transparent conductive film, and the residue (for example, silver residue and / or transparent) Conductive film residues, etc.) and silver resorption problems do not occur.
본 발명의 은 박막 식각액 조성물은 상기 단일막 및 상기 다층막을 동시에 식각할 수 있다.The silver thin film etchant composition of the present invention may simultaneously etch the single layer and the multilayer layer.
본 발명의 은 박막 식각액 조성물은 etch stop 현상을 발생시켜, 식각 속도를 제어하고, side etch를 조절할 수 있는 효과를 제공할 수 있다.The silver thin film etchant composition of the present invention may generate an etch stop phenomenon, thereby providing an effect of controlling the etching rate and adjusting the side etch.
본 발명의 은 박막 식각액 조성물은 하부막 손상이 없어 식각 균일성을 나타내는 습식 식각에 유용하게 사용될 수 있다.The silver thin film etchant composition of the present invention may be usefully used for wet etching because there is no damage to the lower layer and thus exhibits etching uniformity.
본 발명의 은 박막 식각액 조성물은 처리매수 증가에도 식각 성능이 유지되어 side etch 조절이 용이한 효과를 제공할 수 있다.The silver thin film etchant composition of the present invention may maintain the etching performance even when the number of treatments is increased, thereby providing an effect of easily controlling the side etch.
구체적으로, 식각 공정이 수행되어 은 박막 식각액 조성물에 용해된 은의 농도가 1,000ppm 내지 1,500 ppm까지 증가하더라도 상기 은 박막 식각액 조성물의 제조 직후와 실질적으로 동등한 수준의 우수한 식각 성능을 제공할 수 있다.Specifically, even if the concentration of silver dissolved in the silver thin film etchant composition is increased to 1,000 ppm to 1,500 ppm, the etching process may provide excellent etching performance substantially equivalent to that immediately after the silver thin film etchant composition is prepared.
상기 은 합금은 은을 주성분으로 하여 Nd, Cu, Pd, Nb, Ni, Mo, Ni, Cr, Mg, W, Pa 및 Ti 등의 다른 금속을 포함하는 합금 형태와; 은의 질화물, 규화물, 탄화물, 산화물 등을 포함할 수 있으며, 이에 한정되지 않는다.The silver alloy is in the form of an alloy containing other metals such as Nd, Cu, Pd, Nb, Ni, Mo, Ni, Cr, Mg, W, Pa and Ti, based on silver; It may include, but is not limited to, nitrides, silicides, carbides, oxides, and the like of silver.
상기 투명전도막은 산화주석인듐(ITO), 산화아연인듐(IZO), 산화주석아연인듐(ITZO) 및 산화갈륨아연인듐(IGZO)으로 이루어진 군으로부터 선택되는 1종 이상을 포함할 수 있다.The transparent conductive film may include at least one selected from the group consisting of indium tin oxide (ITO), indium zinc oxide (IZO), indium tin zinc oxide (ITZO), and indium gallium zinc indium oxide (IGZO).
상기 다층막은 투명전도막/은, 투명전도막/은 합금, 투명전도막/은/투명전도막 또는 투명전도막/은 합금/투명전도막으로 형성되는 것을 포함할 수 있다.The multilayer film may include a transparent conductive film / silver, a transparent conductive film / silver alloy, a transparent conductive film / silver / transparent conductive film, or a transparent conductive film / silver alloy / transparent conductive film.
본 발명의 은 박막 식각액 조성물은 반사막용 OLED TFT 어레이 기판, 터치스크린 패널용 trace 배선 또는 나노와이어(nanowire) 배선의 형성에 사용될 수 있으며, 이에 한정되지 않고 상기 단일막 및 상기 다층막을 포함하는 전자 부품 소재에 사용될 수 있다.The silver thin film etchant composition of the present invention may be used for forming an OLED TFT array substrate for a reflective film, a trace wiring for a touch screen panel, or a nanowire wiring, but is not limited thereto. An electronic component including the single layer and the multilayer film. It can be used for materials.
(A) 질산(A) nitric acid
본 발명의 은 박막 식각액 조성물에 포함되는 상기 질산은 산화제로서, 상기 은 박막과 상기 투명전도막을 산화시키는 데 사용될 수 있다.The silver nitrate included in the silver thin film etchant composition of the present invention may be used to oxidize the silver thin film and the transparent conductive film.
상기 질산의 함량은 조성물 총 중량에 대하여, 7 내지 15 중량%로 포함되며, 8 내지 12 중량%가 바람직하다. 상기 질산이 상기 함량 범위 내로 포함되는 경우, 식각 속도의 제어가 용이하여, 상기 은 박막과 상기 투명전도막을 균일하게 식각할 수 있다.The content of nitric acid is included in 7 to 15% by weight, based on the total weight of the composition, 8 to 12% by weight is preferred. When the nitric acid is included in the content range, it is easy to control the etching rate, it is possible to uniformly etch the silver thin film and the transparent conductive film.
(B) 유기산(B) organic acid
본 발명의 은 박막 식각액 조성물에 포함되는 상기 유기산은 상기 은 박막에 대한 식각제로서, 상기 질산에 의해 산화된 상기 은 박막을 식각하는 데 사용될 수 있다.The organic acid included in the silver thin film etchant composition of the present invention may be used as an etchant for the silver thin film to etch the silver thin film oxidized by nitric acid.
상기 유기산은 (B-1) 탄소수 1 내지 3의 알킬술폰산 및 (B-2) 알킬술폰산 외 유기산을 포함할 수 있다.The organic acid may include an organic acid other than (B-1) alkylsulfonic acid having 1 to 3 carbon atoms and (B-2) alkylsulfonic acid.
(B-1) 탄소수 1 내지 3의 알킬술폰산(B-1) alkyl sulfonic acid having 1 to 3 carbon atoms
상기 탄소수 1 내지 3의 알킬술폰산은, 예를 들어, 메탄술폰산, 에탄술폰산 또는 프로판술폰산일 수 있으며, 바람직하게는 메탄술폰산일 수 있다.The alkyl sulfonic acid having 1 to 3 carbon atoms may be, for example, methanesulfonic acid, ethanesulfonic acid, or propanesulfonic acid, and preferably methanesulfonic acid.
상기 탄소수 1 내지 3의 알킬술폰산의 함량은 조성물 총 중량에 대하여, 3 내지 8 중량%로 포함될 수 있다. 상기 탄소수 1 내지 3의 알킬술폰산이 상기 함량 범위 내로 포함되는 경우, 상기 은 박막의 식각 속도의 제어가 용이하여, 은 잔사 및 은 재흡착 발생에 따른 불량을 방지할 수 있다.The content of the alkyl sulfonic acid having 1 to 3 carbon atoms may be included in an amount of 3 to 8 wt% based on the total weight of the composition. When the alkyl sulfonic acid having 1 to 3 carbon atoms is included in the content range, it is easy to control the etching rate of the silver thin film, thereby preventing a defect due to silver residue and silver resorption.
(B-2) 알킬술폰산 외 유기산(B-2) alkyl sulfonic acid and other organic acids
상기 알킬술폰산 외 유기산은, 예를 들어, 아세트산, 구연산, 글리콜산, 말론산, 락트산, 타르타르산, 부탄산, 포름산, 글루콘산, 옥살산, 펜탄산, 설포벤조산, 설포석신산, 설포프탈산, 살리실산, 설포살리실산, 벤조산, 글리세르산, 석신산, 말산, 이소시트르산, 프로펜산, 이미노디아세트산 및 에틸렌디아민테트라아세트산으로 이루어진 군으로부터 선택되는 1종 이상, 바람직하게는 2종 이상을 포함할 수 있다. 일 구체예로는, 상기 알킬술폰산 외 유기산은 아세트산, 구연산, 글리콜산, 말론산, 락트산 및 타르타르산으로 이루어진 군으로부터 선택되는 1종 이상, 바람직하게는 2종 이상을 포함하고, 가장 바람직하게는 아세트산 및 구연산을 포함할 수 있다The alkyl sulfonic acid and other organic acids may be, for example, acetic acid, citric acid, glycolic acid, malonic acid, lactic acid, tartaric acid, butanoic acid, formic acid, gluconic acid, oxalic acid, pentanic acid, sulfobenzoic acid, sulfosuccinic acid, sulfophthalic acid, salicylic acid, It may include one or more, preferably two or more selected from the group consisting of sulfosalicylic acid, benzoic acid, glyceric acid, succinic acid, malic acid, isocitric acid, propenoic acid, iminodiacetic acid and ethylenediaminetetraacetic acid. In one embodiment, the alkylsulfonic acid and other organic acids include one or more, preferably two or more, selected from the group consisting of acetic acid, citric acid, glycolic acid, malonic acid, lactic acid and tartaric acid, most preferably acetic acid And citric acid
상기 알킬술폰산 외 유기산의 함량은 조성물 총 중량에 대하여, 25 내지 65 중량%로 포함되며, 45 내지 60 중량%가 바람직하다. 상기 알킬술폰산 외 유기산이 상기 함량 범위 내로 포함되는 경우, 상기 은 박막의 식각 속도의 제어가 용이하여, 은 잔사 및 은 재흡착 발생에 따른 불량을 방지할 수 있다.The content of the organic acid other than the alkylsulfonic acid is included in an amount of 25 to 65% by weight, and preferably 45 to 60% by weight based on the total weight of the composition. When the organic sulfonic acid other than the alkyl sulfonic acid is included in the content range, it is easy to control the etching rate of the silver thin film, thereby preventing defects due to silver residue and silver resorption.
(C) 유기산의 염(C) salts of organic acids
본 발명의 은 박막 식각액 조성물에 포함되는 상기 유기산의 염은, 은 박막에 대한 보조 식각제로서 처리매수에 따른 side etch를 제어하는 데 사용될 수 있다.The salt of the organic acid included in the silver thin film etchant composition of the present invention may be used as an auxiliary etchant for the silver thin film to control side etch according to the number of treatments.
상기 유기산의 염은, 예를 들어, 아세트산염, 구연산염, 글리콜산염, 말론산염, 락트산염 및 타르타르산염으로 이루어진 군으로부터 선택되는 1종 이상인 것이 바람직하며, 구연산염인 것이 더욱 바람직하다.The salt of the organic acid is preferably at least one selected from the group consisting of, for example, acetate, citrate, glycolate, malonate, lactate and tartarate, and more preferably citrate.
또한, 상기 유기산의 염은 유기산의 금속염인 것이 바람직하며, 유기산의 칼륨염, 마그네슘염 및 나트륨염으로 이루어진 군으로부터 선택되는 1종 이상인 것이 더욱 바람직하다.In addition, the salt of the organic acid is preferably a metal salt of the organic acid, more preferably at least one selected from the group consisting of potassium salt, magnesium salt and sodium salt of the organic acid.
상기 유기산의 염의 함량은 조성물 총 중량에 대하여, 0.1 내지 7 중량%로 포함되며, 0.5 내지 5 중량%가 바람직하다. 상기 유기산의 염이 상기 함량 범위 내로 포함되는 경우, 상기 은 박막 식각액의 지속적인 사용에도 식각 속도 제어가 유지되며, 은 잔사 및 은 재흡착 발생에 따른 불량을 방지할 수 있다.The content of the salt of the organic acid is included in 0.1 to 7% by weight based on the total weight of the composition, 0.5 to 5% by weight is preferred. When the salt of the organic acid is included in the content range, the etching rate control is maintained even with continuous use of the silver thin film etchant, and it is possible to prevent defects due to silver residue and silver resorption.
(D) 황산염(D) sulfate
본 발명의 은 박막 식각액 조성물에 포함되는 상기 황산염은, 상기 투명전도막에 대한 식각제로서 상기 투명전도막을 식각하는 데 사용될 수 있다.The sulfate contained in the silver thin film etchant composition of the present invention may be used to etch the transparent conductive film as an etchant for the transparent conductive film.
또한, 본 발명의 은 박막 식각액 조성물에 포함되는 상기 황산염은, 상기 은 박막의 etch stop 현상을 발생시키고, 따라서 식각 공정 상에서 식각 시간(etching time)이 증가하더라도 side etch가 증가하는 것을 방지할 수 있다.In addition, the sulphate included in the silver thin film etchant composition of the present invention generates an etch stop phenomenon of the silver thin film, thereby preventing side etch from increasing even if the etching time is increased in the etching process. .
다시 말하면, 본 발명의 은 박막 식각액 조성물은 상기 황산염을 포함함으로써, etch stop 현상의 발생을 제어하고, 이에 따라 식각 속도가 제어되어, side etch가 조절될 수 있다.In other words, the silver thin film etchant composition of the present invention includes the sulfate, thereby controlling the occurrence of the etch stop phenomenon, thereby controlling the etching rate, so that the side etch can be controlled.
상기 황산염의 함량은 조성물 총 중량에 대하여, 5 내지 25 중량%로 포함되며, 7 내지 12 중량%가 바람직하다. 상기 황산염이 상기 함량 범위 내로 포함되는 경우, 식각 속도의 제어, 즉, 식각 공정 상에서 식각 시간의 제어가 용이하며, etch stop 현상이 규칙적으로 발현되어, 상기 은 박막과 상기 투명전도막을 균일하게 식각할 수 있다.The amount of the sulfate is included in 5 to 25% by weight, preferably 7 to 12% by weight, based on the total weight of the composition. When the sulfate is included in the content range, it is easy to control the etching rate, that is, the control of the etching time in the etching process, and the etch stop phenomenon is regularly expressed, so that the silver thin film and the transparent conductive film may be uniformly etched. Can be.
상기 황산염은 중황산칼륨, 중황산나트륨 및 황산마그네슘으로 이루어진 군으로부터 선택되는 1종 이상을 포함할 수 있으며, 바람직하게는 중황산칼륨을 포함할 수 있다The sulfate may include one or more selected from the group consisting of potassium bisulfate, sodium bisulfate and magnesium sulfate, and may preferably include potassium bisulfate.
(E) 물(E) water
본 발명의 은 박막 식각액 조성물에 포함되는 상기 물은 반도체 공정용 탈이온수일 수 있으며, 바람직하게는 18㏁/㎝ 이상의 상기 탈이온수를 사용할 수 있다.The water included in the silver thin film etchant composition of the present invention may be deionized water for a semiconductor process, and preferably 18 deg./cm or more of the deionized water may be used.
상기 물의 함량은 조성물 총 중량이 100 중량%가 되도록 하는 잔량으로 포함될 수 있다.The amount of water may be included in the remaining amount such that the total weight of the composition is 100% by weight.
또한, 본 발명은, 본 발명에 따른 은 박막 식각액 조성물을 이용하는 식각 방법을 제공한다.In addition, the present invention provides an etching method using the silver thin film etchant composition according to the present invention.
상기 식각 방법은, i) 기판 상에, 은 또는 은 합금으로 이루어진 단일막, 또는 상기 단일막과 투명전도막으로 구성되는 다층막을 형성하는 단계; ii) 상기 단일막 또는 상기 다층막 위에 선택적으로 광 반응 물질을 남기는 단계; 및 iii) 본 발명에 따른 은 박막 식각액 조성물을 사용하여, 상기 단일막 또는 상기 다층막을 식각하는 단계를 포함한다.The etching method comprises the steps of: i) forming a single film made of silver or silver alloy or a multilayer film made of the single film and the transparent conductive film; ii) optionally leaving a photoreactive material over the single layer or the multilayer layer; And iii) etching the single film or the multilayer film using the silver thin film etchant composition according to the present invention.
또한, 본 발명은, 본 발명에 따른 은 박막 식각액 조성물을 이용하는 금속 패턴의 형성 방법을 제공한다.The present invention also provides a method of forming a metal pattern using the silver thin film etchant composition according to the present invention.
상기 금속 패턴의 형성 방법은, i) 기판 상에, 은 또는 은 합금으로 이루어진 단일막, 또는 상기 단일막과 투명전도막으로 구성되는 다층막을 형성하는 단계; 및 ii) 본 발명에 따른 은 박막 식각액 조성물을 사용하여, 상기 단일막 또는 상기 다층막을 식각하는 단계를 포함한다.The method of forming the metal pattern comprises the steps of: i) forming a single film made of silver or silver alloy, or a multilayer film made of the single film and the transparent conductive film; And ii) etching the single layer or the multilayer layer using the silver thin film etchant composition according to the present invention.
이하, 실시예를 통하여 본 발명을 보다 상세히 설명한다. 그러나 하기의 실시예는 본 발명을 더욱 구체적으로 설명하기 위한 것으로서, 본 발명의 범위가 하기의 실시예에 의하여 한정되는 것은 아니다. 본 발명의 범위는 특허청구범위에 표시되었고, 더욱이 특허 청구범위 기록과 균등한 의미 및 범위 내에서의 모든 변경을 함유하고 있다. 또한, 이하의 실시예, 비교예에서 함유량을 나타내는 "%" 및 "부"는 특별히 언급하지 않는 한 질량 기준이다.Hereinafter, the present invention will be described in more detail with reference to Examples. However, the following examples are intended to illustrate the present invention in more detail, and the scope of the present invention is not limited by the following examples. The scope of the invention is indicated in the appended claims, and moreover contains all modifications within the meaning and range equivalent to the claims. In addition, "%" and "part" which show content in a following example and a comparative example are a mass reference | standard unless there is particular notice.
실시예 1 내지 7 및 비교예 1 내지 10에 따른 은 박막 식각액 조성물의 제조Preparation of silver thin film etchant composition according to Examples 1 to 7 and Comparative Examples 1 to 10
하기 [표 1]을 참조하여, 실시예 및 비교예에 따른 은 박막 식각액 조성물을 제조하였다.Referring to Table 1 below, silver thin film etchant compositions according to Examples and Comparative Examples were prepared.
탈이온수(E)
Deionized water
메탄
술폰산(B-1)
methane
Sulfonic acid
아세트산(B-2)
Acetic acid
구연산(B-2)
Citric acid
옥살산(B-2)
Oxalic acid
나트륨염Citric acid
Sodium salt
나트륨염Malonic acid
Sodium salt
칼륨Bisulfuric acid
potassium
마그네슘Sulfuric acid
magnesium
시험예 1: Side Etch 측정Test Example 1: Side Etch Measurement
기판 상에 ITO(산화주석인듐)/은/ITO 삼중막을 형성한 뒤, 상기 삼중막 상에 포토레지스트를 패터닝하였다. 상기 기판을 실시예 및 비교예에 따른 은 박막 식각액 조성물을 이용하여 식각 공정을 수행하였다.After forming an ITO (indium tin oxide) / silver / ITO triple film on the substrate, the photoresist was patterned on the triple film. The substrate was etched using the silver thin film etchant composition according to Examples and Comparative Examples.
상기 삼중막의 전체 영역 중, 상기 포토레지스트가 패터닝되지 않은 영역의 식각이 종료된 시점을 기준으로, Over Etch(O/E)를 40%, 70%, 100%로 수행하였다. 상기 포토레지스트의 끝단으로부터 상기 삼중막 중 은 박막까지의 거리를 전자주사현미경(SEM; 모델명: SU-8010, HITACHI)을 이용하여 측정하고, 하기 [표 2]에 나타내었다.Over etching (O / E) was performed at 40%, 70%, and 100% of the entire region of the triple layer based on the time point at which the photoresist was not etched. The distance from the end of the photoresist to the silver thin film in the triple layer was measured using an electron scanning microscope (SEM; model name: SU-8010, HITACHI), and is shown in the following [Table 2].
시험예 2: 은(Ag) 잔사 측정Test Example 2: Silver (Ag) residue measurement
기판 상에 ITO/은/ITO 삼중막을 형성한 뒤, 상기 삼중막 상에 포토레지스트를 패터닝하였다.After forming an ITO / silver / ITO triple film on the substrate, the photoresist was patterned on the triple film.
분사식 식각 방식의 실험장비(모델명: ETCHER(TFT), SEMES사) 내에 실시예 및 비교예에 따른 은 박막 식각액 조성물을 각각 넣고, 온도를 40℃로 설정하여 가온한 후, 온도가 40±0.1℃에 도달하였을 때, 85초 동안 상기 기판의 식각 공정을 수행하였다.The silver thin film etchant compositions according to Examples and Comparative Examples were respectively placed in an experimental equipment of a spray etching method (model name: ETCHER (TFT), SEMES), and the temperature was set to 40 ° C. and heated, and then the temperature was 40 ± 0.1 ° C. When reached, the substrate was etched for 85 seconds.
식각 공정이 종료된 후, 탈이온수로 세정하고, 열풍건조장치를 이용하여 건조한 뒤, 포토레지스트 박리기(PR stripper)를 이용하여 포토레지스트를 제거하였다. 세정 및 건조 후 전자주사현미경(SEM; 모델명: SU-8010, HITACHI사 제조)을 이용하여, 상기 삼중막의 전체 영역 중, 상기 포토레지스트가 패터닝되지 않은 영역에 은이 식각 되지 않고 남아 있는 현상인 은 잔사를 측정하고, 하기 기준으로 평가하여, 하기 [표 2]에 나타내었다.After the etching process was completed, washed with deionized water, dried using a hot air dryer, and then removed a photoresist using a photoresist stripper (PR stripper). Silver residue, which is a phenomenon in which silver is not etched in the region where the photoresist is not patterned in the entire region of the triple layer using an electron scanning microscope (SEM; model name: SU-8010, manufactured by Hitachi) after washing and drying Was measured, evaluated according to the following criteria, and shown in the following [Table 2].
<잔사 측정 평가 기준><Residual measurement evaluation standard>
O: 양호(잔사 미발생)O: Good (no residue)
X: 불량(잔사 발생)X: Poor (residue)
시험예 3: 은(Ag) 재흡착 측정Test Example 3: Determination of Silver (Ag) Resorption
기판 상에 ITO/은/ITO 삼중막을 형성한 뒤, 상기 삼중막 상에 포토레지스트를 패터닝하였다.After forming an ITO / silver / ITO triple film on the substrate, the photoresist was patterned on the triple film.
분사식 식각 방식의 실험장비(모델명: ETCHER(TFT), SEMES사) 내에 실시예 및 비교예에 따른 은 박막 식각액 조성물을 각각 넣고, 온도를 40℃로 설정하여 가온한 후, 온도가 40±0.1℃에 도달하였을 때, 85초 동안 상기 기판의 식각 공정을 수행하였다.The silver thin film etchant compositions according to Examples and Comparative Examples were respectively placed in an experimental equipment of a spray etching method (model name: ETCHER (TFT), SEMES), and the temperature was set to 40 ° C. and heated, and then the temperature was 40 ± 0.1 ° C. When reached, the substrate was etched for 85 seconds.
식각 공정이 종료된 후, 탈이온수로 세정하고, 열풍건조장치를 이용하여 건조한 뒤, 포토레지스트 박리기(PR stripper)를 이용하여 포토레지스트를 제거하였다. 세정 및 건조 후 상기 기판을 절단하고, 그 단면을 전자주사현미경(SEM; 모델명: SU-8010, HITACHI사 제조)을 이용하여 측정하였다. 상기 식각 공정으로 인해, 상기 기판 내 노출된 S/D 부의 Ti/Al/Ti 삼중막의 상부 Ti에 흡착된 은 입자의 개수를 측정하고, 하기의 기준으로 평가하여, 하기 [표 2]에 나타내었다.After the etching process was completed, washed with deionized water, dried using a hot air dryer, and then removed a photoresist using a photoresist stripper (PR stripper). After washing and drying, the substrate was cut, and its cross section was measured using an electron scanning microscope (SEM; model name: SU-8010, manufactured by HITACHI). Due to the etching process, the number of silver particles adsorbed on the upper Ti of the Ti / Al / Ti triple layer of the S / D part exposed in the substrate was measured and evaluated according to the following criteria, and is shown in the following [Table 2]. .
<은 재흡착 평가 기준><Silver Resorption Evaluation Criteria>
양호: (5개 미만)Good: (less than 5)
보통: (5개 이상 50개 미만)Medium: (more than 5 and less than 50)
불량: (50개 이상)Poor: (over 50)
상기 표 2에서, Ag 농도가 0ppm인 경우는 은 박막 식각액 조성물의 제조 직후 상태에 해당하며, Ag 농도가 1,000ppm인 경우는 식각 공정이 수행되어 은 박막 식각액 조성물 내에 Ag가 용해되어 있는 상태에 해당한다.In Table 2, when the Ag concentration is 0 ppm, it corresponds to a state immediately after preparation of the silver thin film etchant composition, and when the Ag concentration is 1,000 ppm, an etching process is performed to correspond to a state where Ag is dissolved in the silver thin film etchant composition. do.
실시예에 따른 은 박막 식각액 조성물을 사용하여 식각 공정을 수행하는 경우, over etch 수행 시, 50 내지 100% 전체 범위에서 side etch가 0.2μm 내외로 측정되어, 본 발명에서 목적하는 수준의 side etch가 유지되며, 은 잔사 및 은 재흡착 문제가 발생하지 않는 것을 알 수 있다. 또한 조성물 제조 직후(Ag 0ppm)와 비교하여, 처리매수가 증가되어 조성물 내 은의 농도가 증가된 후(Ag 1,000ppm)에도, side etch가 유지되고, 은 잔사 및 재흡착 문제가 발생하지 않는 것을 알 수 있다.When the etching process is performed using the silver thin film etchant composition according to the embodiment, when the over etch is performed, the side etch is measured within 0.2 μm in the entire range of 50 to 100%, so that the side etch of the level desired in the present invention is achieved. It can be seen that the silver residue and silver resorption problems do not occur. Also, as compared with immediately after the preparation of the composition (Ag 0 ppm), even after the increase in the number of treatments and the concentration of silver in the composition (Ag 1,000 ppm), the side etch was maintained, and no silver residue and resorption problems occurred. Can be.
반면, 비교예에 따른 은 박막 식각액 조성물을 사용하여 식각 공정을 수행하는 경우, 너무 많이 식각되거나, 전혀 식각되지 않는 등 side etch의 조절이 용이하지 않고, 은 잔사 및 은 재흡착 문제가 발생하는 것을 알 수 있으며, 처리매수 증가에 따라 side etch 조절이 더욱 어렵고, 은 잔사 및 은 재흡착 문제가 더욱 불량해지는 것을 확인할 수 있다.On the other hand, when the etching process is performed using the silver thin film etchant composition according to the comparative example, it is not easy to control the side etch, such as too much etching or not etching at all, and the problem of silver residue and silver resorption occurs. It can be seen that the side etch is more difficult to control as the number of treated sheets increases, and the problem of silver residue and silver resorption becomes worse.
이와 같이, 본 발명에 따른 은 박막 식각액 조성물을 사용하여 식각 공정을 수행하는 경우, side etch 조절이 용이하고, 은 잔사 및 은 재흡착 문제가 발생하지 않으며, 처리매수가 증가하여도 우수한 식각 성능이 제공된다는 것을 알 수 있다.As such, when the etching process is performed using the silver thin film etchant composition according to the present invention, side etch control is easy, no problem of silver residue and silver resorption occurs, and an excellent etching performance is obtained even if the number of treatments is increased. It can be seen that.
Claims (13)
(A) 질산 7 내지 15 중량%;
(B-1) 탄소수 1 내지 3의 알킬술폰산 3 내지 8 중량%;
(B-2) 알킬술폰산 외 유기산 25 내지 65 중량%;
(C) 유기산의 염 0.1 내지 7 중량%;
(D) 황산염 5 내지 25 중량%; 및
(E) 물 잔량을 포함하고,
상기 (D) 황산염은 중황산칼륨, 중황산나트륨 및 황산마그네슘으로 이루어진 군으로부터 선택되는 1종 이상을 포함하는 것을 특징으로 하는 은 박막 식각액 조성물.
Regarding the total weight of the composition,
(A) 7-15 weight percent nitric acid;
(B-1) 3 to 8% by weight of alkyl sulfonic acid having 1 to 3 carbon atoms;
(B-2) 25 to 65% by weight of organic acid other than alkylsulfonic acid;
(C) 0.1 to 7% by weight of salt of organic acid;
(D) 5-25 wt% sulfate; And
(E) includes residual water,
The (D) sulfate is a thin film etching liquid composition, characterized in that it comprises one or more selected from the group consisting of potassium bisulfate, sodium bisulfate and magnesium sulfate.
상기 (B-1) 탄소수 1 내지 3의 알킬술폰산은 메탄술폰산인 것을 특징으로 하는 은 박막 식각액 조성물.
The method according to claim 1,
The alkyl sulfonic acid having 1 to 3 carbon atoms (B-1) is methanesulfonic acid.
상기 (B-2) 알킬술폰산 외 유기산은, 아세트산, 구연산, 말론산, 부탄산, 포름산, 글루콘산, 글리콜산, 옥살산, 펜탄산, 설포벤조산, 설포석신산, 설포프탈산, 살리실산, 설포살리실산, 벤조산, 락트산, 글리세르산, 석신산, 말산, 타르타르산, 이소시트르산, 프로펜산, 이미노디아세트산 및 에틸렌디아민테트라아세트산으로 이루어진 군으로부터 선택되는 2종 이상을 포함하는 것을 특징으로 하는 은 박막 식각액 조성물.
The method according to claim 1,
The organic acids other than alkylsulfonic acid (B-2) include acetic acid, citric acid, malonic acid, butanoic acid, formic acid, gluconic acid, glycolic acid, oxalic acid, pentanic acid, sulfobenzoic acid, sulfosuccinic acid, sulfophthalic acid, salicylic acid, sulfosalicylic acid, A silver thin film etchant composition comprising at least two selected from the group consisting of benzoic acid, lactic acid, glyceric acid, succinic acid, malic acid, tartaric acid, isocitric acid, propenoic acid, iminodiacetic acid and ethylenediaminetetraacetic acid.
상기 (B-2) 알킬술폰산 외 유기산은 아세트산 및 구연산을 포함하는 것을 특징으로 하는 은 박막 식각액 조성물.
The method according to claim 1,
The (B-2) alkyl sulfonic acid and other organic acids include acetic acid and citric acid silver thin film etchant composition, characterized in that.
상기 (B-2) 알킬술폰산 외 유기산은 45 내지 60 중량%로 포함되는 것을 특징으로 하는 은 박막 식각액 조성물.
The method according to claim 1,
The organic thin film (B-2) alkyl sulfonic acid other organic acid is a thin film etchant composition, characterized in that it comprises 45 to 60% by weight.
상기 (C) 유기산의 염은 유기산의 금속염인 것을 특징으로 하는 은 박막 식각액 조성물.
The method according to claim 1,
The salt of the organic acid (C) is a thin film etching liquid composition, characterized in that the metal salt of the organic acid.
상기 (C) 유기산의 염은 유기산의 칼륨염, 유기산의 마그네슘염 및 유기산의 나트륨염으로 이루어진 군으로부터 선택되는 1종 이상인 것을 특징으로 하는 은 박막 식각액 조성물.
The method according to claim 6,
The salt of the organic acid (C) is silver thin film etchant composition, characterized in that at least one selected from the group consisting of potassium salt of organic acid, magnesium salt of organic acid and sodium salt of organic acid.
상기 (C) 유기산의 염은 아세트산염, 구연산염, 글리콜산염, 말론산염, 락트산염 및 타르타르산염으로 이루어진 군으로부터 선택되는 1종 이상을 포함하는 것을 특징으로 하는 은 박막 식각액 조성물.
The method according to claim 1,
The salt of the organic acid (C) is a thin film etchant composition, characterized in that it comprises one or more selected from the group consisting of acetate, citrate, glycolate, malonate, lactate and tartarate.
상기 은 박막 식각액 조성물은 은 또는 은 합금으로 이루어진 단일막, 또는 상기 단일막과 투명전도막으로 구성되는 다층막을 동시에 식각할 수 있는 것을 특징으로 하는 은 박막 식각액 조성물.
The method according to claim 1,
The silver thin film etchant composition is capable of simultaneously etching a single film made of silver or a silver alloy, or a multilayer film composed of the single film and the transparent conductive film.
상기 투명전도막은 산화주석인듐(ITO), 산화아연인듐(IZO), 산화주석아연인듐(ITZO) 및 산화갈륨아연인듐(IGZO)으로 이루어진 군으로부터 선택되는 1종 이상인 것을 특징으로 하는 은 박막 식각액 조성물.
The method according to claim 9,
The transparent conductive film is a silver thin film etchant composition, characterized in that at least one selected from the group consisting of indium tin oxide (ITO), zinc indium oxide (IZO), tin zinc indium oxide (ITZO) and gallium zinc indium oxide (IGZO). .
상기 다층막은 투명전도막/은, 투명전도막/은 합금, 투명전도막/은/투명전도막 또는 투명전도막/은 합금/투명전도막으로 형성되는 것을 포함하는 은 박막 식각액 조성물.
The method according to claim 9,
The multilayer film is a thin film etchant composition comprising a transparent conductive film / silver, transparent conductive film / silver alloy, transparent conductive film / silver / transparent conductive film or transparent conductive film / silver alloy / transparent conductive film.
상기 단일막 또는 상기 다층막 위에 선택적으로 광 반응 물질을 남기는 단계; 및
청구항 1의 조성물을 사용하여, 상기 단일막 또는 상기 다층막을 식각하는 단계를 포함하는 식각 방법.
Forming a single film made of silver or silver alloy or a multilayer film made of the single film and the transparent conductive film on the substrate;
Selectively leaving a photoreactive material on the single layer or the multilayer layer; And
Etching method comprising etching the single layer or the multilayer film using the composition of claim 1.
청구항 1의 조성물을 사용하여, 상기 단일막 또는 상기 다층막을 식각하는 단계를 포함하는 금속 패턴의 형성 방법.
Forming a single film made of silver or silver alloy or a multilayer film made of the single film and the transparent conductive film on the substrate; And
Using the composition of claim 1, the method of forming a metal pattern comprising the step of etching the single film or the multilayer film.
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| KR20160100591A (en) * | 2015-02-16 | 2016-08-24 | 동우 화인켐 주식회사 | Etchant composition for ag thin layer and method for fabricating metal pattern using the same |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20210138412A (en) * | 2020-05-12 | 2021-11-19 | 동우 화인켐 주식회사 | Etchant composition for silver thin layer and etching method and method for fabrication metal pattern using the same |
| US11639470B2 (en) | 2020-12-28 | 2023-05-02 | Samsung Display Co., Ltd. | Etching composition for thin film containing silver, method for forming pattern and method for manufacturing a display device using the same |
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| KR102599939B1 (en) | 2023-11-09 |
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