KR20190141549A - Solar cell panel integrated with diplay device - Google Patents

Solar cell panel integrated with diplay device Download PDF

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KR20190141549A
KR20190141549A KR1020180068477A KR20180068477A KR20190141549A KR 20190141549 A KR20190141549 A KR 20190141549A KR 1020180068477 A KR1020180068477 A KR 1020180068477A KR 20180068477 A KR20180068477 A KR 20180068477A KR 20190141549 A KR20190141549 A KR 20190141549A
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solar cell
layer
front cover
display
led array
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박기주
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(주)솔라플렉스
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    • H—ELECTRICITY
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03923—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIBIIICVI compound materials, e.g. CIS, CIGS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
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    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
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    • Y02E10/541—CuInSe2 material PV cells

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  • Engineering & Computer Science (AREA)
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Abstract

The present invention relates to a solar cell panel integrated with a back display. The solar cell panel adopts a single crystal silicon solar cell or CIGS thin film solar cell as a power generation element, implements a function for power generation at the front surface, and has a display for expressing information, advertisement, etc. on the rear surface to supply electric power generated in a solar cell of the front surface as power consumed in a display. The solar cell panel integrated with a back display comprises: a front cover layer; a solar cell layer disposed at the bottom of the front cover layer; an LED array layer disposed at the bottom of the solar cell layer; and a back sheet layer disposed at the bottom of the LED array layer.

Description

배면 디스플레이 일체형 솔라셀 패널{Solar cell panel integrated with diplay device}Solar cell panel integrated with diplay device

본 발명은 배면 디스플레이 일체형 솔라셀 패널에 관한 것으로, 단결정 실리콘 태양전지 또는 CIGS 박막형 태양전지를 발전소자로 채택하여, 전면에는 발전을 위한 기능을 구현하며, 배면에는 정보, 광고 등을 표현하는 디스플레이를 구비하여 전면의 솔라셀에서 발전된 전기에너지를 디스플레이에서 소비되는 전력을 공급할 수 있도록 솔라셀과 디스플레이를 일체화한 배면 디스플레이 일체형 솔라셀 패널에 관한 것이다.The present invention relates to a back panel integrated solar panel, which adopts a single crystal silicon solar cell or CIGS thin film solar cell as a power generator, implements a function for power generation on the front, and has a display for displaying information, advertising, etc. on the back The present invention relates to a rear display integrated solar panel in which a solar cell and a display are integrated to supply electric energy consumed in the display.

최근 석유나 석탄과 같은 기존 에너지 자원의 고갈이 예상되면서 이들을 대체할 대체 에너지에 대한 관심이 높아지고 있다. 그 중에서도 태양전지는 반도체의 성질을 이용하여 빛 에너지를 전기에너지로 변환하는 장치로서 다른 신재생 에너지원에 비하여 그 에너지원을 장소에 구애받지 않고 사용할 수 있다는 장점이 있다.Recently, with the anticipation of depletion of existing energy sources such as oil and coal, there is increasing interest in alternative energy to replace them. Among them, the solar cell is a device that converts light energy into electrical energy using the properties of a semiconductor, and has the advantage that the energy source can be used regardless of the place, compared to other renewable energy sources.

태양전지의 구조 및 원리에 대해서 간단히 설명하면, 태양전지는 P(Positive)형 반도체와 N(Negative)형 반도체를 접합시킨 PN 접합 구조를 하고 있으며, 이러한 구조의 태양전지에 태양광이 입사되면, 입사된 태양광이 가지고 있는 에너지에 의해 상기 반도체 내에서 정공(Hole)과 전자(Electron)가 발생하고, 이때, PN접합에서 발생한 전기장에 의해서 상기 정공(+)는 P형 반도체쪽으로 이동하고 상기 전자(-)는 N형 반도체쪽으로 이동하게 되어 전위가 발생하게 됨으로써 전력을 생산할 수 있게 된다.The structure and principle of the solar cell will be described briefly. The solar cell has a PN junction structure in which a P (positive) type semiconductor and an N (Negative) type semiconductor are bonded to each other. Holes and electrons are generated in the semiconductor by the energy of the incident solar light. At this time, the holes (+) are moved toward the P-type semiconductor by the electric field generated in the PN junction. Negative (-) is moved toward the N-type semiconductor to generate a potential to produce power.

특히, 광흡수층으로 실리콘을 사용하는 태양전지는 결정질 기판형 태양전지와, 비정질의 박막형 태양전지로 구분된다.In particular, solar cells using silicon as the light absorption layer are classified into crystalline substrate type solar cells and amorphous thin film type solar cells.

근래에는 다양한 산업분야에서 엘이디를 응용한 다양한 제품이 개발되어 적용되고 있는데, 특히 고휘도의 엘이디 램프는 수명이 반영구적이면서도 소비전력이 매우 낮은 장점이 있으므로, 기존의 형광등이나 백열등, 나트륨등 및 수은등을 비롯한 다양한 전등을 대체할 수 있다.In recent years, various products using LEDs have been developed and applied in various industrial fields. In particular, high brightness LED lamps have the advantages of being semi-permanent and having very low power consumption. Can replace various lights.

즉, LED 램프를 통해 각종 유해물질이 포함되고 수명이 짧은 기존의 전등을 대체함에 따라 환경오염을 줄일 수 있는 효과가 있음과 더불어, LED 램프의 낮은 전력소모를 통해 에너지 절감 효과도 얻을 수 있을 뿐만 아니라, 광소자의 종류에 따라 적색, 녹색, 청색의 광 출력을 얻을 수 있어, 광통신을 비롯하여 전자광고판 등에 문자나 숫자 등의 영상을 표시하는데 많이 이용되고 있다.In other words, the LED lamp contains various harmful substances and replaces the existing lamps with short lifespan, which can reduce environmental pollution. In addition, energy saving effect can be obtained through low power consumption of the LED lamp. In addition, red, green, and blue light outputs can be obtained depending on the type of optical device, and are widely used for displaying images such as letters and numbers in optical communication and electronic billboards.

또한, 문자나 숫자 등의 영상을 여러 가지 색상으로 표시하기 위해서 서로 다른 색(빛의 3원색)의 엘이디 칩들을 근접 배치함으로써 색의 간섭을 통해 자연의 색을 표현하도록 하고 있다.In addition, in order to display images such as letters and numbers in various colors, LED chips of different colors (three primary colors of light) are disposed close to each other to express natural colors through color interference.

이러한 장점을 이용한 기술로서는 대한민국 등록특허 제1225980호의 "발광장치"가 제안되었으며, 이를 도 1을 참조하여 설명하면, 태양광이 입사하는 전면기판(110)과 전면기판(110)과 대향하는 후면기판(120) 사이에 복수의 태양전지(150)가 배열되는 태양전지모듈(100), 후면기판(120)상에 위치하는 발광부(200) 및 태양전지모듈(100)과 발광부(200)를 체결하는 체결부(11)를 포함하고, 발광부(200)는 후면기판(120)상의 도광판(210)과 도광판(210)의 적어도 일 측면에 위치하는 발광소자모듈(220)을 포함함으로써 발광부와 태양전지모듈의 일체화되지 않아 정보 표시 장치의 구현에 대한 디자인 룰에 제한이 존재한다.As a technology using this advantage, a "light emitting device" of Korean Patent No. 1225980 has been proposed. Referring to FIG. 1, the front substrate 110 and the rear substrate facing the front substrate 110 are exposed to sunlight. The solar cell module 100 having the plurality of solar cells 150 arranged therebetween, the light emitting unit 200 and the solar cell module 100 and the light emitting unit 200 disposed on the rear substrate 120. And a fastening part 11 to be fastened, and the light emitting part 200 includes a light guide plate 210 on the rear substrate 120 and a light emitting device module 220 disposed on at least one side of the light guide plate 210. Since there is no integration of the solar cell module, there is a limitation in the design rule for the implementation of the information display device.

이러한 문제점을 개선하기 위한 종래의 기술로서는 본 출원인에 의해 출원된 대한민국 특허출원 제2017-0175588호의 "플렉시블 태양전지를 이용한 정보 표시 장치"가 제안되었다.As a conventional technique for improving such a problem, a "information display apparatus using a flexible solar cell" of Korean Patent Application No. 2017-0175588 filed by the present applicant has been proposed.

이를 도 2를 참조하여 설명하면, 광 수집 능력을 증대시키기 위한 광 수집층(310)과 광 수집층(310)의 하부에 위치하는 제1 접착제층(320), 제1 접착제층(320)의 하부에 위치하며 엘이디 광원을 수용하기 위한 펀칭 홈이 형성된 태양광 발전을 위한 플렉시블 CIGS 태양전지층(330), 플렉시블 CIGS 태양전지층 하부에 위치하는 제2 접착제층(340), 제2 접착제층(340) 하부에 위치하는 절연체층; 상기 플렉시블 CIGS 태양전지층, 제2 접착제층 및 절연체층(350)을 관통하여 배치되는 엘이디 발광소자(360), 엘이디 발광소자(360)의 하부에 배치되며 엘이디 발광소자의 전기적인 접속을 위하여 배치되는 플렉시블 엘이디 기판층을 주요한 구성으로 하여, 디스플레이층인 엘이디 발광소자(360) 및 플렉시블 엘이디 기판층(370)을 플렉시블 CIGS 태양전지층(330)과 일체화하였으나, 엘이디 광원을 수용하기 위하여 플렉시블 CIGS 태양전지층(330)에 펀칭홈을 형성하는 과정에서 버(burr)가 발생되어 가공상에 어려움이 존재하였다.Referring to FIG. 2, the light collecting layer 310 and the first adhesive layer 320 and the first adhesive layer 320 disposed under the light collecting layer 310 to increase the light collecting capability are provided. A flexible CIGS solar cell layer 330 for photovoltaic power generation, a second adhesive layer 340 and a second adhesive layer disposed below the flexible CIGS solar cell layer. 340) an insulator layer disposed below; The LED light emitting device 360 and the LED light emitting device 360 disposed through the flexible CIGS solar cell layer, the second adhesive layer, and the insulator layer 350 are disposed below the LED light emitting device 360 to be electrically connected. The flexible LED substrate layer, which is a main structure, is integrated with the LED light emitting device 360 and the flexible LED substrate layer 370 as the display layer with the flexible CIGS solar cell layer 330. Burr was generated in the process of forming the punching groove in the battery layer 330, there was a difficulty in processing.

상기와 같은 종래 기술의 문제점을 해결하기 위하여 안출된 본 발명은 단결정 실리콘 태양전지 또는 CIGS 박막형 태양전지를 발전소자로 채택하여, 전면에는 발전을 위한 기능을 구현하며, 배면에는 정보, 광고 등을 표현하는 디스플레이를 구비하여 전면의 솔라셀에서 발전된 전기에너지를 디스플레이에서 소비되는 전력을 공급할 수 있도록 솔라셀과 디스플레이를 일체화하기 위한 목적이 있다.The present invention devised to solve the problems of the prior art as described above adopts a single crystal silicon solar cell or a CIGS thin-film solar cell as a power generator, implements a function for power generation on the front, the back to express information, advertising, etc. The purpose of the display unit is to integrate the solar cell with the display so that the electric energy generated by the solar cell on the front side can supply power consumed by the display.

또한, 본 발명은 솔라셀과 디스플레이를 일체화하는 경우에 태양전지층에 LED 소자를 수용하기 위한 천공홈을 별도로 형성하지 아니하여 공정상의 간략화를 이루기 위한 또 다른 목적이 있다.In addition, the present invention has another object to achieve a simplified process by not forming a perforated groove for accommodating the LED device in the solar cell layer when the solar cell and the display are integrated.

본 발명의 상기 목적은 배면 디스플레이 일체형 솔라셀 패널에 있어서, 전면 커버층; 상기 전면 커버층 하단에 배치되는 솔라셀 층; 상기 솔라셀 층 하단에 배치되는 LED 배열층; 및 상기 LED 배열층 하단에 배치되는 후면 시트층으로 구성되는 것을 특징으로 하는 배면 디스플레이 일체형 솔라셀 패널에 의해 달성된다.An object of the present invention is a rear display integrated solar panel, comprising: a front cover layer; A solar cell layer disposed under the front cover layer; An LED array layer disposed below the solar cell layer; And a back sheet layer disposed under the LED array layer.

따라서, 본 발명의 배면 디스플레이 일체형 솔라셀 패널은 단결정 실리콘 태양전지 또는 CIGS 박막형 태양전지를 발전소자로 채택하여, 전면에는 발전을 위한 기능을 구현하며, 배면에는 정보, 광고 등을 표현하는 디스플레이를 구비하여 전면의 솔라셀에서 발전된 전기에너지를 디스플레이에서 소비되는 전력을 공급할 수 있도록 솔라셀과 디스플레이를 일체화하기 위한 효과가 있다.Accordingly, the rear display integrated solar panel of the present invention adopts a single crystal silicon solar cell or a CIGS thin film solar cell as a power generator, implements a function for power generation on the front side, and has a display for displaying information, advertisement, etc. on the back side. There is an effect of integrating the solar cell and the display so that the electric energy generated by the solar cell on the front side can supply power consumed by the display.

또한, 본 발명은 솔라셀과 디스플레이를 일체화하는 경우에 태양전지층에 LED 소자를 수용하기 위한 천공홈을 별도로 형성하지 아니하여 공정상의 간략화를 이룰 수 있는 또 다른 효과가 있다.In addition, when the solar cell and the display are integrated, the present invention has another effect of simplifying the process by not forming a perforation groove for accommodating the LED device in the solar cell layer.

도 1은 종래의 기술에 따른 발광장치의 구성도,
도 2는 종래의 기술에 따른 플렉시블 태양전지를 이용한 정보 표시 장치의 단면 개략도,
도 3은 본 발명에 따른 배면 디스플레이 일체형 솔라셀 패널 단면 개략도이다.1 is a block diagram of a light emitting device according to the related art;
2 is a schematic cross-sectional view of an information display apparatus using a flexible solar cell according to the related art;
3 is a cross-sectional schematic view of the back display integrated solar panel according to the present invention.

본 명세서 및 청구범위에 사용된 용어나 단어는 통상적이거나 사전적인 의미로 한정해서 해석되어서는 아니되며, 발명자는 그 자신의 발명을 가장 최선의 방법으로 설명하기 위해 용어의 개념을 적절하게 정의할 수 있다는 원칙에 입각하여 본 발명의 기술적 사상에 부합하는 의미와 개념으로 해석되어야만 한다.The terms or words used in this specification and claims are not to be construed as being limited to their ordinary or dictionary meanings, and the inventors may appropriately define the concept of terms in order to best describe their invention. It should be interpreted as meaning and concept corresponding to the technical idea of the present invention based on the principle that the present invention.

따라서, 본 명세서에 기재된 실시예와 도면에 도시된 구성은 본 발명의 가장 바람직한 일 실시예에 불과할 뿐이고 본 발명의 기술적 사상을 모두 대변하는 것은 아니므로, 본 출원시점에 있어서 이들을 대체할 수 있는 다양한 균등물과 변형예들이 있을 수 있음을 이해하여야 한다.Therefore, the embodiments described in the specification and the drawings shown in the drawings are only the most preferred embodiment of the present invention and do not represent all of the technical idea of the present invention, various modifications that can be replaced at the time of the present application It should be understood that there may be equivalents and variations.

이하 첨부된 도면을 참조하여 본 발명의 바람직한 실시예를 상세히 설명하기로 한다. Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

도 3은 본 발명에 따른 배면 디스플레이 일체형 솔라셀 패널 단면 개략도이다. 도 3을 예시하여 설명하면 다음과 같다.3 is a cross-sectional schematic view of the back display integrated solar panel according to the present invention. Referring to Figure 3 by way of example.

본 발명의 배면 디스플레이 일체형 솔라셀 패널에 있어서, 전면 커버층(510), 전면 커버층(510) 하단에 배치되는 솔라셀 층(550), 솔라셀 층(550) 하단에 배치되는 LED 배열층(570, 580) 및 LED 배열층(570, 580) 하단에 배치되는 후면 시트층(600)으로 구성된다.In the back panel integrated solar panel of the present invention, the front cover layer 510, the solar cell layer 550 disposed on the bottom of the front cover layer 510, the LED array layer disposed on the solar cell layer 550 ( 570 and 580 and a rear sheet layer 600 disposed under the LED array layers 570 and 580.

여기서, 전면 커버층(510)은 일반적으로 강화유리를 사용하는 것이 일반적이나, 추가적으로 PMMA(Poly Meta Metyl Acrylate), PC(Poly Carbonate), 강화 플라스틱 등을 사용하며, 강도의 보강을 위하여 다아이몬드 나노 파우더층 또는 상압 플라즈마 코팅에 의하여 실리콘 산화물층을 추가로 형성하는 것도 가능하다.Here, the front cover layer 510 generally uses tempered glass, but additionally uses PMMA (Poly Meta Metyl Acrylate), PC (Poly Carbonate), reinforced plastics, and the like for reinforcing strength. It is also possible to further form a silicon oxide layer by nano powder layer or atmospheric pressure plasma coating.

여기서, LED 배열층(570, 580)은 LED 소자(580)를 투명 LED 기판(570)에 장착한 것으로, 투명 LED 기판(570)을 채택함으로써 전면 커버층(510)으로 입사되는 태양광뿐만 아니라 배면으로 입사되는 태양광이 모두 솔라셀 층(550)으로 입사되도록 함으로서 태양광 발전의 효율을 제고할 수 있도록 한다.Here, the LED array layers 570 and 580 are mounted to the transparent LED substrate 570, the LED element 580, the adoption of the transparent LED substrate 570 as well as the sunlight incident on the front cover layer 510 The solar light incident on the back surface is incident on the solar cell layer 550 to improve the efficiency of photovoltaic power generation.

또한, 전면 커버층(510)과 솔라셀 층(550) 사이에는 특정 주파수의 광을 반사 또는 투과시키는 대역통과 광 필터층(Band Pass Optical Filter, 530)을 형성함으로써 솔라셀 층(550)으로 태양광이 효율적으로 전달되도록 하여 솔라셀 층(550)에서의 발전 효율을 높이도록 하는 것이 더욱 바람직하다.In addition, a band pass optical filter 530 is formed between the front cover layer 510 and the solar cell layer 550 to reflect or transmit light having a specific frequency, thereby forming solar light as the solar cell layer 550. It is more preferable to increase the power generation efficiency in the solar cell layer 550 by allowing this to be efficiently delivered.

여기서, 대역통과 광 필터층(530) 양면에는 점착제인 EVA(Ethylene Vinyl Acetate) 또는 PVB(Poly Vinyl Butyral)중 어느 하나에 의해 상기 전면 커버층(510) 및 솔라셀 층(550)과 점착되도록 하며, LED 배열층(570, 580) 양면에는 점착제인 EVA 또는 PVB중 어느 하나에 의해 솔라셀 층(550) 및 후면 시트층(600)과 점착되도록 한다.Here, both surfaces of the band pass optical filter layer 530 are attached to the front cover layer 510 and the solar cell layer 550 by any one of an adhesive (Ethylene Vinyl Acetate) or PVB (Poly Vinyl Butyral). Both sides of the LED array layers 570 and 580 are adhered to the solar cell layer 550 and the back sheet layer 600 by either EVA or PVB as an adhesive.

여기서, 솔라셀 층(550)은 결정질 실리콘(Crystaline Silicone) 또는 CIGS(Copper Indium Gallium Selenide) 박막으로 형성되여 태양광에 의한 발전을 하여 축전지(미도시)에 충전하여 LED 배열층(570, 580)에 전기에너지를 공급하여 정보표시가 가능하도록 한다.Here, the solar cell layer 550 is formed of a crystalline silicon (Crystaline Silicone) or CIGS (Copper Indium Gallium Selenide) thin film to generate power by solar light to charge the battery (not shown) LED array layer (570, 580) Supply electric energy to the system so that the information can be displayed.

여기서, 후면 시트층(600)은 솔라셀 층(550)의 지지/보호체 역할 뿐만 아니라 솔라셀 층(550)을 외부 환경으로부터 보호하기 위한 내구·내후·절연·투습 방지 등의 특성을 위한 것으로 유리, PC 또는 강화 플라스틱 등으로 구성된다.Here, the back sheet layer 600 not only serves as a support / protector of the solar cell layer 550 but also for durability, weather resistance, insulation, moisture barrier, etc. to protect the solar cell layer 550 from the external environment. It consists of glass, PC or reinforced plastics.

본 발명은 이상에서 살펴본 바와 같이 바람직한 실시예를 들어 도시하고 설명하였으나, 상기한 실시예에 한정되지 아니하며 본 발명의 정신을 벗어나지 않는 범위 내에서 당해 발명이 속하는 기술분야에서 통상의 지식을 가진 자에 의해 다양한 변경과 수정이 가능할 것이다.Although the present invention has been shown and described with reference to the preferred embodiments as described above, it is not limited to the above embodiments and those skilled in the art without departing from the spirit of the present invention. Various changes and modifications will be possible.

510 : 전면 커버층 520, 540, 560, 590 : 점착제 층
530 : 대역통과 광 필터 층 550 : 솔라셀 층
570 : 투명 LED 기판 580 : LED 소자
600 : 후면 시트층 510: front cover layer 520, 540, 560, 590: adhesive layer
530: bandpass optical filter layer 550: solar cell layer
570: transparent LED substrate 580: LED device
600: back sheet layer

Claims (6)

배면 디스플레이 일체형 솔라셀 패널에 있어서,
전면 커버층;
상기 전면 커버층 하단에 배치되는 솔라셀 층;
상기 솔라셀 층 하단에 배치되는 LED 배열층; 및
상기 LED 배열층 하단에 배치되는 후면 시트층으로 구성되는 것을 특징으로 하는 배면 디스플레이 일체형 솔라셀 패널.
In the back display integrated solar panel,
Front cover layer;
A solar cell layer disposed under the front cover layer;
An LED array layer disposed below the solar cell layer; And
A back panel integrated solar panel, characterized in that consisting of a back sheet layer disposed below the LED array layer.
제1항에 있어서,
상기 LED 배열층은 LED 소자를 투명 LED 기판에 장착한 것을 특징으로 하는 배면 디스플레이 일체형 솔라셀 패널.
The method of claim 1,
The LED array layer is a back panel integrated solar panel, characterized in that the LED element mounted on a transparent LED substrate.
제1항에 있어서,
상기 전면 커버층과 상기 솔라셀 층 사이에는 특정 주파수의 광을 반사 또는 투과시키는 대역통과 광 필터층이 형성되는 것을 특징으로 하는 배면 디스플레이 일체형 솔라셀 패널.
The method of claim 1,
And a band pass optical filter layer for reflecting or transmitting light of a specific frequency between the front cover layer and the solar cell layer.
제3항에 있어서,
상기 대역통과 광 필터층 양면에는 점착제인 EVA 또는 PVB중 어느 하나에 의해 상기 전면 커버층 및 상기 솔라셀 층과 점착되는 것을 특징으로 하는 배면 디스플레이 일체형 솔라셀 패널.
The method of claim 3,
Both sides of the band pass optical filter layer are attached to the front cover layer and the solar cell layer by any one of EVA or PVB as an adhesive.
제1항에 있어서,
상기 LED 배열층 양면에는 점착제인 EVA 또는 PVB중 어느 하나에 의해 상기 솔라셀 층 및 상기 후면 시트층과 점착되는 것을 특징으로 하는 배면 디스플레이 일체형 솔라셀 패널.
The method of claim 1,
Both sides of the LED array layer back panel integrated solar panel, characterized in that the adhesive with the solar cell layer and the back sheet layer by any one of the adhesive EVA or PVB.
제1항에 있어서,
상기 솔라셀 층은 결정질 실리콘 또는 CIGS 박막으로 형성되는 것을 특징으로 하는 배면 디스플레이 일체형 솔라셀 패널.The method of claim 1,
And the solar cell layer is formed of crystalline silicon or CIGS thin film.
KR1020180068477A 2018-06-14 2018-06-14 Solar cell panel integrated with diplay device KR20190141549A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210143408A (en) * 2020-05-20 2021-11-29 고려대학교 산학협력단 Solar cell module with micro led and manufacturing method thereof
KR20220005336A (en) * 2020-07-06 2022-01-13 이세현 Media building integrated photo voltaic module and image contents display system using the same
KR20230067997A (en) 2021-11-10 2023-05-17 한솔테크닉스(주) Solar system for possible of front image display

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210143408A (en) * 2020-05-20 2021-11-29 고려대학교 산학협력단 Solar cell module with micro led and manufacturing method thereof
KR20220005336A (en) * 2020-07-06 2022-01-13 이세현 Media building integrated photo voltaic module and image contents display system using the same
KR20220113318A (en) * 2020-07-06 2022-08-12 이세현 Media building integrated photo voltaic module
KR20230067997A (en) 2021-11-10 2023-05-17 한솔테크닉스(주) Solar system for possible of front image display

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