KR20170133722A - Semiconductor package sliming apparatus and method of the same - Google Patents
Semiconductor package sliming apparatus and method of the same Download PDFInfo
- Publication number
- KR20170133722A KR20170133722A KR1020160064862A KR20160064862A KR20170133722A KR 20170133722 A KR20170133722 A KR 20170133722A KR 1020160064862 A KR1020160064862 A KR 1020160064862A KR 20160064862 A KR20160064862 A KR 20160064862A KR 20170133722 A KR20170133722 A KR 20170133722A
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- South Korea
- Prior art keywords
- semiconductor package
- unit
- package
- polishing
- spindle
- Prior art date
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 63
- 238000000034 method Methods 0.000 title claims abstract description 23
- 238000005498 polishing Methods 0.000 claims abstract description 40
- 238000000465 moulding Methods 0.000 claims abstract description 12
- 239000004575 stone Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 3
- 229920006336 epoxy molding compound Polymers 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/565—Moulds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
- H01L21/67712—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations the substrate being handled substantially vertically
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The present invention relates to an apparatus and method for reducing the thickness of a semiconductor package, and more particularly, to an apparatus and a method for reducing the thickness of a semiconductor package, in which even if warpage is severe in a strip state, And more particularly, to a semiconductor package slimming device and method.
A semiconductor package slimming apparatus according to the present invention comprises: a table for sucking unit packages cut in chip units in a strip-shaped semiconductor package; A spindle disposed above the table; Polishing means for polishing the molding surface of the unit package, which is rotated by the spindle and is seated on the table, to reduce the thickness of the unit package; And conveying means for relatively moving the table or the spindle horizontally.
Description
The present invention relates to an apparatus and method for reducing the thickness of a semiconductor package, and more particularly, to an apparatus and a method for reducing the thickness of a semiconductor package, in which even if warpage is severe in a strip state, And more particularly, to a semiconductor package slimming device and method.
In recent years, with the development of semiconductor device manufacturing technology, semiconductor packages having semiconductor devices suitable for processing more data in a short time have been developed.
A semiconductor package is manufactured by die bonding a semiconductor chip on a pad of a substrate material such as a lead frame or a printed circuit board and wire bonding the lead of the lead frame or the terminal of the printed circuit board and the semiconductor chip, And an epoxy molding compound (EMC) around the wire to protect the connection part of the wire.
Figures 1 and 2 illustrate a
However, the use of the printed
In recent years, there has been a problem in that it is difficult to cope with the trend of miniaturization of electronic devices and slimness of information communication devices.
In order to solve such a problem, the present applicant has filed a patent application No. 1347026. [
3 and 4, a
The table 10 is a component for vacuum-adsorbing the
The polishing means 20 includes a
5 and 6 show another
A
The rotation axis of the
And a rotating
Further, the
Further, a transfer means (not shown) for relatively moving the
On the other hand, the semiconductor package may be deformed during the manufacturing process. Warpage occurs as shown in Fig. 7 or 8 (a).
In this case, even if the
SUMMARY OF THE INVENTION It is an object of the present invention to provide a semiconductor package which can be flatly and firmly adsorbed even when a warpage phenomenon is severe in a strip state, And a package slimming apparatus and method.
According to an aspect of the present invention, there is provided a semiconductor package slimming apparatus comprising: a table for sucking unit packages cut in chip units in a strip-shaped semiconductor package; A spindle disposed above the table; Polishing means for polishing the molding surface of the unit package, which is rotated by the spindle and is seated on the table, to reduce the thickness of the unit package; And conveying means for relatively moving the table or the spindle horizontally.
In addition, it is preferable that a plurality of seating grooves on which the unit packages are seated are formed on the table.
Preferably, the polishing means is formed in a cylindrical shape, and the direction of the rotation axis is parallel to the unit package.
It is preferable that the polishing means is formed in a ring shape, and the direction of the rotation axis is perpendicular to the unit package.
A semiconductor package slimming method according to the present invention comprises the steps of: 1) cutting a semiconductor package in a strip state into chips; 2) adsorbing each of the unit packages cut in a chip unit to a table; And 3) reducing the thickness by polishing the molding surface of the unit package while moving the table or the polishing means relative to each other.
Particularly, the semiconductor package in the strip state is preferably a semiconductor package having a warpage phenomenon.
Preferably, the polishing means is formed in a cylindrical shape having a rotation axis direction parallel to the unit package, and the molding surface of the unit package is polished using a circumferential surface.
It is preferable that the polishing means is formed in a ring shape in which the direction of the axis of rotation is orthogonal to the unit package.
According to the present invention, even when the semiconductor package has a severe warpage phenomenon in a strip state, the semiconductor package can be flatly and strongly adsorbed.
Accordingly, the thickness of the semiconductor package can be uniformly slimmed.
1 shows a semiconductor package in a strip state.
2 shows a cross-sectional view of a semiconductor package.
3 and 4 show a conventional slimming apparatus.
5 and 6 show other conventional slimming apparatuses.
FIGS. 7 and 8 show a slimming method of a semiconductor package in a strip state in which a conventional warpage is severe.
9 to 11 show the configuration of a slimming apparatus according to the present invention.
12 and 13 show a slimming method according to the present invention.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a configuration and an operation of an embodiment of the present invention will be described in detail with reference to the accompanying drawings.
A semiconductor slimming apparatus according to the present invention includes a table, a spindle, a polishing means, and a transfer means.
Referring to FIG. 9, the table 400 includes a plurality of
In the meantime, the unit packages separated in units of chips are seated in the
10 shows a
11 shows a state in which the
Hereinafter, an operation state of the semiconductor package slimming apparatus according to the present invention and a slimming method using the same will be described.
12 shows an embodiment of a slimming method according to the present invention. As shown in the figure, the table 400 vacuum-adsorbs the unit packages 101 cut in chip units using the pneumatic pressure applied through the vacuum holes 412 in a state in which the unit packages 101 are seated in the
On the other hand, on the upper part of the table 400, a polishing
Fig. 13 shows another embodiment of the slimming method according to the present invention. As in the previous embodiment, the table 400 vacuum-adsorbs the unit packages 101, which are cut in chip units, by using air pressure applied through the vacuum holes 412 in a state where the unit packages 101 are seated in the respective seating grooves.
On the other hand, a polishing
In the present embodiment, an apparatus and a method for slimming a semiconductor package mounted with a semiconductor chip on a printed circuit board have been described. However, the slimming apparatus and method according to the present invention are also applicable to slimming of a semiconductor package mounted on a lead frame It is natural that it can be applied to. It is of course also possible to apply not only to semiconductor packages but also to reduce the thickness of various substrates.
10: Polishing means
21: abrasive wheel
200: polishing means
211: Abrasive tip
220: spindle
400: Table
411: seat groove
412: Vacuum hole
Claims (8)
A spindle disposed above the table;
Polishing means for polishing the molding surface of the unit package, which is rotated by the spindle and is seated on the table, to reduce the thickness of the unit package; And
And transport means for relatively moving the table or the spindle horizontally.
Wherein a plurality of seating grooves on which the unit packages are seated are formed on the table.
Wherein the polishing means is formed in a cylindrical shape and the direction of rotation axis is parallel to the unit package.
Wherein the polishing means is formed in a ring shape and the direction of rotation axis is orthogonal to the unit package.
2) adsorbing each of the unit packages cut in a chip unit to a table; And
And 3) polishing the molding surface of the unit package while reducing the thickness by relatively moving the table or the polishing means.
Wherein the semiconductor package in the strip state is a semiconductor package having a warpage phenomenon.
Wherein the polishing means is formed in a cylindrical shape having a rotation axis direction parallel to the unit package, and polishes a molding surface of the unit package using a circumferential surface.
Wherein the polishing means is formed in a ring shape so that the direction of the axis of rotation is orthogonal to the unit package.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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KR1020160064862A KR101971059B1 (en) | 2016-05-26 | 2016-05-26 | Semiconductor package sliming apparatus and method of the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020160064862A KR101971059B1 (en) | 2016-05-26 | 2016-05-26 | Semiconductor package sliming apparatus and method of the same |
Publications (2)
Publication Number | Publication Date |
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KR20170133722A true KR20170133722A (en) | 2017-12-06 |
KR101971059B1 KR101971059B1 (en) | 2019-04-23 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1020160064862A KR101971059B1 (en) | 2016-05-26 | 2016-05-26 | Semiconductor package sliming apparatus and method of the same |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114291571A (en) * | 2022-01-11 | 2022-04-08 | 业成科技(成都)有限公司 | Adsorption device |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07299700A (en) * | 1994-05-11 | 1995-11-14 | Yotaro Hatamura | Attitude control system for machine tool and tool, and grinding system |
JPH09174398A (en) * | 1995-12-26 | 1997-07-08 | Toshiba Corp | Grinding device and grinding wheel |
JPH10315103A (en) * | 1997-05-16 | 1998-12-02 | Okamoto Kosaku Kikai Seisakusho:Kk | Grinding/polishing method and device therefor |
JP2003236735A (en) * | 2002-02-20 | 2003-08-26 | Sumitomo Electric Ind Ltd | Wafer grinding method |
JP2007005366A (en) * | 2005-06-21 | 2007-01-11 | Toshiba Corp | Method of manufacturing semiconductor device |
JP2011258789A (en) * | 2010-06-10 | 2011-12-22 | Lapis Semiconductor Co Ltd | Grinding method and grinder |
JP2014024136A (en) * | 2012-07-25 | 2014-02-06 | Disco Abrasive Syst Ltd | Method of processing package substrate |
KR20150136993A (en) * | 2014-05-28 | 2015-12-08 | 가부시기가이샤 디스코 | Grinding apparatus and method for grinding rectangular substrate |
-
2016
- 2016-05-26 KR KR1020160064862A patent/KR101971059B1/en active IP Right Grant
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07299700A (en) * | 1994-05-11 | 1995-11-14 | Yotaro Hatamura | Attitude control system for machine tool and tool, and grinding system |
JPH09174398A (en) * | 1995-12-26 | 1997-07-08 | Toshiba Corp | Grinding device and grinding wheel |
JPH10315103A (en) * | 1997-05-16 | 1998-12-02 | Okamoto Kosaku Kikai Seisakusho:Kk | Grinding/polishing method and device therefor |
JP2003236735A (en) * | 2002-02-20 | 2003-08-26 | Sumitomo Electric Ind Ltd | Wafer grinding method |
JP2007005366A (en) * | 2005-06-21 | 2007-01-11 | Toshiba Corp | Method of manufacturing semiconductor device |
JP2011258789A (en) * | 2010-06-10 | 2011-12-22 | Lapis Semiconductor Co Ltd | Grinding method and grinder |
JP2014024136A (en) * | 2012-07-25 | 2014-02-06 | Disco Abrasive Syst Ltd | Method of processing package substrate |
KR20150136993A (en) * | 2014-05-28 | 2015-12-08 | 가부시기가이샤 디스코 | Grinding apparatus and method for grinding rectangular substrate |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114291571A (en) * | 2022-01-11 | 2022-04-08 | 业成科技(成都)有限公司 | Adsorption device |
CN114291571B (en) * | 2022-01-11 | 2023-09-22 | 业成科技(成都)有限公司 | Adsorption device |
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KR101971059B1 (en) | 2019-04-23 |
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