KR20170103204A - Method for manufacturing semiconductor device - Google Patents
Method for manufacturing semiconductor device Download PDFInfo
- Publication number
- KR20170103204A KR20170103204A KR1020160025668A KR20160025668A KR20170103204A KR 20170103204 A KR20170103204 A KR 20170103204A KR 1020160025668 A KR1020160025668 A KR 1020160025668A KR 20160025668 A KR20160025668 A KR 20160025668A KR 20170103204 A KR20170103204 A KR 20170103204A
- Authority
- KR
- South Korea
- Prior art keywords
- layer
- plug
- forming
- hydrogen annealing
- opening
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 74
- 239000004065 semiconductor Substances 0.000 title abstract description 22
- 238000004519 manufacturing process Methods 0.000 title abstract description 11
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 79
- 239000001257 hydrogen Substances 0.000 claims abstract description 75
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 75
- 238000000137 annealing Methods 0.000 claims abstract description 67
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 36
- 229920005591 polysilicon Polymers 0.000 claims abstract description 36
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 238000005530 etching Methods 0.000 claims abstract description 25
- 238000011049 filling Methods 0.000 claims abstract description 22
- 238000000926 separation method Methods 0.000 claims abstract description 18
- 229910052751 metal Inorganic materials 0.000 claims description 46
- 239000002184 metal Substances 0.000 claims description 46
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 24
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 22
- 229910052710 silicon Inorganic materials 0.000 claims description 22
- 239000010703 silicon Substances 0.000 claims description 22
- 238000002955 isolation Methods 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 18
- 229910021332 silicide Inorganic materials 0.000 claims description 18
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 18
- 238000011065 in-situ storage Methods 0.000 claims description 15
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 8
- 238000011066 ex-situ storage Methods 0.000 claims description 5
- 230000008569 process Effects 0.000 description 48
- 125000006850 spacer group Chemical group 0.000 description 36
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 14
- 230000005012 migration Effects 0.000 description 14
- 238000013508 migration Methods 0.000 description 14
- 229910052814 silicon oxide Inorganic materials 0.000 description 14
- 230000008021 deposition Effects 0.000 description 10
- 238000003860 storage Methods 0.000 description 7
- 230000004888 barrier function Effects 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 5
- 238000001312 dry etching Methods 0.000 description 4
- 230000006872 improvement Effects 0.000 description 4
- 239000011810 insulating material Substances 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- 238000009413 insulation Methods 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- 206010010144 Completed suicide Diseases 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 125000004433 nitrogen atom Chemical group N* 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000006187 pill Substances 0.000 description 1
- 238000005389 semiconductor device fabrication Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76837—Filling up the space between adjacent conductive structures; Gap-filling properties of dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
- H01L21/28044—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer
- H01L21/28052—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer the conductor comprising a silicide layer formed by the silicidation reaction of silicon with a metal layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/32051—Deposition of metallic or metal-silicide layers
- H01L21/32053—Deposition of metallic or metal-silicide layers of metal-silicide layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/32055—Deposition of semiconductive layers, e.g. poly - or amorphous silicon layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/477—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76885—By forming conductive members before deposition of protective insulating material, e.g. pillars, studs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
-
- H01L27/10885—
-
- H01L27/10891—
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Semiconductor Memories (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
The present invention relates to a method of manufacturing a semiconductor device capable of filling openings of high aspect ratio without padding or voids, and a method of manufacturing a semiconductor device according to the present invention includes forming a plurality of bit line structures on a substrate; Forming a sacrificial layer between the bit line structures; Etching the sacrificial layer to form a plurality of sacrificial pillars and a plurality of openings located between the sacrificial pillars; Forming a plurality of plug separating portions filling each of the openings; Removing the sacrificial pillars to form contact holes between the plurality of plug separators; Performing hydrogen annealing to deform the sidewall profile of the plug separation portion and the contact hole; And filling the polysilicon layer in the contact hole in which the hydrogen annealing has been performed.
Description
The present invention relates to a semiconductor device, and more particularly, to a method of manufacturing a semiconductor device using a high aspect ratio capping method.
The sidewall profile of high aspect ratio openings (e.g., gaps, contact holes) in the semiconductor device fabrication process is an important variable in the subsequent gap fill process.
Embodiments of the present invention provide a method of manufacturing a semiconductor device that can fill openings with high aspect ratios without shims or voids.
A method of fabricating a semiconductor device according to an embodiment of the present invention includes forming a plurality of bit line structures on a substrate; Forming a sacrificial layer between the bit line structures; Etching the sacrificial layer to form a plurality of sacrificial pillars and a plurality of openings located between the sacrificial pillars; Forming a plurality of plug separating portions filling each of the openings; Removing the sacrificial pillars to form contact holes between the plurality of plug separators; Performing hydrogen annealing to deform the sidewall profile of the plug separation portion and the contact hole; And filling the polysilicon layer in the contact hole in which the hydrogen annealing has been performed.
A method for fabricating a semiconductor device according to an embodiment of the present invention includes: forming a nitrogen-containing structure including an opening on a substrate; Performing hydrogen annealing to deform the top portion profile of the opening; And filling the conductive layer in the opening in which the hydrogen annealing is performed.
A method of fabricating a semiconductor device according to an embodiment of the present invention includes: forming a first insulating layer on a substrate; Forming a first opening in the first insulating layer; Forming a sacrificial layer to fill the first opening; Etching a portion of the sacrificial layer to form a second opening; Filling a second insulating layer within the second opening; Removing the sacrificial layer to form a third opening between the second insulating layers; Performing hydrogen annealing to deform the sidewall profile of the third opening and the second insulating layer; And filling the conductive layer within the third opening in which the hydrogen annealing has been performed.
The technique can perform a gap fill without shims or voids in a subsequent capping process by implementing hydrogen annealing to induce migration after forming a high aspect ratio opening.
1A to 1K are plan views showing a method of manufacturing a semiconductor device according to the first embodiment.
2A to 2K are cross-sectional views taken along lines A-A 'and B-B' in FIGS. 1A to 1K.
3A illustrates a semiconductor device according to the second embodiment.
3B is a cross-sectional view taken along line A-A 'and line B-B' in FIG. 3A.
3C is a cross-sectional view taken along the line C-C 'in FIG. 3A.
4A to 4K illustrate an example of a method for forming a semiconductor device according to the second embodiment.
Hereinafter, the most preferred embodiment of the present invention will be described. In the drawings, the thickness and the spacing are expressed for convenience of explanation, and can be exaggerated relative to the actual physical thickness. In describing the present invention, known configurations irrespective of the gist of the present invention may be omitted. It should be noted that, in the case of adding the reference numerals to the constituent elements of the drawings, the same constituent elements have the same number as much as possible even if they are displayed on different drawings.
The following embodiments can describe semiconductor processing for high aspect ratio gap fill.
1A to 1K are plan views showing a method of manufacturing a semiconductor device according to the first embodiment. 2A to 2K are cross-sectional views showing a method of manufacturing a semiconductor device according to the first embodiment. 2A to 2K are cross-sectional views taken along lines A-A 'and B-B' in FIGS. 1A to 1K.
As shown in Figs. 1A and 2A, a plurality of
As shown in Figs. 1B and 2B, a
As shown in Figs. 1C and 2C, the
As described above, the
As shown in Figs. 1D and 2D, a
Next, a part of the
As shown in Figs. 1E and 2E, the
After the
A
The method of forming the
As described above, the
As shown in Figs. 1H and 2H, the residual
The process of forming the series of
The
The sidewall of the
The
This embodiment can deform the
After forming the
Hydrogen annealing can proceed in-situ or ex-situ. In situ hydrogen annealing can be performed in the deposition equipment of the subsequent
In situ hydrogen annealing can be performed at a low pressure of 3 Torr or less and at a temperature of 700 to 850 占 폚 for 30 minutes to 1 hour. In situ hydrogen annealing can be performed while flowing hydrogen gas (H 2 ) at a flow rate of 1 to 10 l. The pressure can be optimized according to the degree of improvement of the top portion profile of the
Exhaust hydrogen annealing can be performed at a low pressure of 3 Torr or less and a temperature of 700 to 850 占 폚 for 30 minutes to 1 hour. Exhaust hydrogen annealing can be performed while flowing hydrogen gas (H 2 ) at a flow rate of 1 to 10 l. The pressure can be optimized according to the degree of improvement of the top portion profile of the
As shown in FIGS. 1J and 2J, the
As shown in FIGS. 1K and 2K, the
In accordance with the foregoing, it is possible to induce migration through hydrogen annealing and thus to adjust the physical threshold number of the
3A illustrates a semiconductor device according to the second embodiment. The second embodiment describes an example in which hydrogen annealing is applied in a semiconductor device having a memory cell such as a DRAM or the like. 3B is a cross-sectional view taken along line A-A 'and line B-B' in FIG. 3A. 3C is a cross-sectional view taken along the line C-C 'in FIG. 3A.
The
The
The
A
A pair of first and second
A bit
A bit line structure (BL) is formed on the bit line contact plug (112). The bit line structure BL includes a
A cell contact structure may be formed between neighboring bit line structures BL. The cell contact structure is formed in the
The cell contact structure may include a
A
As described above, when viewed in a direction parallel to the bit line structure BL (direction B-B '), the
4A to 4K illustrate an example of a method for forming a semiconductor device according to the second embodiment. 4A to 4K are cross-sectional views taken along line A-A 'and line B-B' in FIG. 3A.
As shown in Fig. 4A, a
A
The
A buried word line structure including a
Next, the first and second
Next, a
Next, a
As shown in FIG. 4B, the second
As shown in FIG. 4C, a bit line structure BL and a bit
The
Subsequently, the
As described above, the gap G is formed in the
As shown in FIG. 4D, a
The
Next, a
Subsequently, the
As described above, the bit line structure BL and the
As shown in FIG. 4E, a
Next, a part of the
As shown in FIG. 4F, the
Next, a
A method of forming the
As described above, the
As shown in Fig. 4G, the
Next, the bottom portion of the
The
The side wall of the
This embodiment can deform the
The
The
In situ hydrogen annealing can be performed at a low pressure of 3 Torr or less and at a temperature of 700 to 850 占 폚 for 30 minutes to 1 hour. In situ hydrogen annealing can be performed while flowing hydrogen gas (H 2 ) at a flow rate of 1 to 10 l. The pressure can be optimized according to the degree of improvement of the top portion profile of the
Exhaust hydrogen annealing can be performed at a low pressure of 3 Torr or less and a temperature of 700 to 850 占 폚 for 30 minutes to 1 hour. Exhaust hydrogen annealing can be performed while flowing hydrogen gas (H 2 ) at a flow rate of 1 to 10 l. The pressure can be optimized according to the degree of improvement of the top portion profile of the
In the case where the
Under 750 ℃ / 30 bun / H 2 / 1Torr conditions when performing the
When performing the
As described above, the
In another embodiment, the hydrogen annealing may be performed after removing the
As shown in FIG. 4I, the
As shown in FIG. 4J, a
As described above, migration can be induced through the
As shown in FIG. 4K, a metal silicide 53 may be formed. The metal silicide 53 may be formed by a deposition of a silicidable metal layer and a thermal process. The metal silicide 53 may be formed on the
A metal plug 54 may be formed and a metal plug 54 may be formed in the
Next, a memory element 55 may be formed on the metal plug 54. The memory element 55 may comprise a capacitor.
The semiconductor device according to the above-described embodiments may be applied to a dynamic random access memory (DRAM), and the present invention is not limited thereto. For example, a static random access memory (SRAM), a flash memory, a ferroelectric random access memory (FeRAM) (Magnetic Random Access Memory), and a PRAM (Phase Change Random Access Memory).
For example, the annealing for inducing the migration can be applied to the STI process for forming the device isolation layer (32 in FIG. 4A). After the
Also, the hydrogen annealing can be applied after formation of the word line trench (35 in FIG. 4A). As a result, the void can be imaged without being voided during the step of forming the conductive layer for the buried
In addition, the hydrogen annealing may be applied before forming the gate insulating film of the peripheral circuit region.
The hydrogen annealing can also be applied after the recess etch for the recess gate.
The hydrogen annealing may also be applied prior to forming the gate insulating film in the HKMG (High-k Metal Gate) process of the logic device.
It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the invention as defined by the appended claims. Will be clear to those who have knowledge of.
31: substrate 32: element isolation layer
33: active region 34: hard mask layer
35: word line trench 36: gate insulating layer
37: buried word line 38: sealing layer
39: first doped region 40: second doped region
41: first contact hole 42: bit line contact plug
43: bit line 44: bit line cap layer
45: spacer element 46: sacrificial layer
48: opening 49, 49M: plug separating portion
50, 50M: second contact hole 51: hydrogen annealing
52A: polysilicon layer 52: silicon plug
53: metal silicide 54: metal plug
55: memory element
Claims (20)
Forming a sacrificial layer between the bit line structures;
Etching the sacrificial layer to form a plurality of sacrificial pillars and a plurality of openings located between the sacrificial pillars;
Forming a plurality of plug separating portions filling each of the openings;
Removing the sacrificial pillars to form contact holes between the plurality of plug separators;
Performing hydrogen annealing to deform the sidewall profile of the plug separation portion and the contact hole; And
Filling the polysilicon layer in the contact hole in which the hydrogen annealing is performed
≪ / RTI >
Wherein performing the hydrogen anneal and filling the polysilicon layer comprises:
In-situ or ex situ.
And the plug separation portion is formed of a nitrogen-containing material.
Wherein the plug separating portion is formed of silicon nitride.
Wherein the performing the hydrogen annealing comprises:
And a hydrogen flow rate is set to 1 to 10 l at a low pressure of 3 Torr or less and a temperature of 700 to 850 占 폚 for 30 minutes to 1 hour.
After filling the polysilicon layer,
Forming a silicon plug that partially recesses the polysilicon layer to partially fill the contact hole;
Forming a metal silicide on the silicon plug;
Forming a metal plug on the metal silicide; And
Forming a memory element on the metal plug
≪ / RTI >
Prior to forming the bit line structure,
Etching the substrate to form a trench;
Performing hydrogen annealing to deform the sidewall profile of the trench; And
Forming a device isolation layer in the hydrogen annealed trench;
≪ / RTI >
After the step of forming the device isolation layer,
Etching the substrate on which the device isolation layer is formed to form a word line trench;
Performing hydrogen annealing to modify the sidewall profile of the wordline trench; And
Forming a buried word line located in the word line trench where the hydrogen annealing is performed and extending in a direction crossing the bit line structure
≪ / RTI >
Performing hydrogen annealing to deform the top portion profile of the opening; And
Filling the conductive layer in the opening in which the hydrogen annealing is performed
≪ / RTI >
The step of performing the hydrogen annealing and the step of filling the conductive layer,
In-situ or ex situ.
Wherein the conductive layer comprises polysilicon.
Wherein the nitrogen-containing structure comprises silicon nitride.
Wherein the performing the hydrogen annealing comprises:
And a hydrogen flow rate is set to 1 to 10 l at a low pressure of 3 Torr or less and a temperature of 700 to 850 占 폚 for 30 minutes to 1 hour.
Forming a first opening in the first insulating layer;
Forming a sacrificial layer to fill the first opening;
Etching a portion of the sacrificial layer to form a second opening;
Filling a second insulating layer within the second opening;
Removing the sacrificial layer to form a third opening between the second insulating layers;
Performing hydrogen annealing to deform the sidewall profile of the third opening and the second insulating layer; And
Filling the conductive layer in a third opening in which the hydrogen annealing has been performed
≪ / RTI >
Wherein the second insulating layer is formed of a material including an element migrated by the hydrogen annealing.
Wherein the second insulating layer is formed of a nitrogen-containing material.
The step of performing the hydrogen annealing and the step of filling the conductive layer,
In-situ or ex situ.
Wherein the conductive layer comprises polysilicon.
Wherein the first insulating layer and the second insulating layer each include silicon nitride.
Wherein the performing the hydrogen annealing comprises:
And a hydrogen flow rate is set to 1 to 10 l at a low pressure of 3 Torr or less and a temperature of 700 to 850 占 폚 for 30 minutes to 1 hour.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020160025668A KR20170103204A (en) | 2016-03-03 | 2016-03-03 | Method for manufacturing semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020160025668A KR20170103204A (en) | 2016-03-03 | 2016-03-03 | Method for manufacturing semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
KR20170103204A true KR20170103204A (en) | 2017-09-13 |
Family
ID=59968125
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020160025668A KR20170103204A (en) | 2016-03-03 | 2016-03-03 | Method for manufacturing semiconductor device |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR20170103204A (en) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110534515A (en) * | 2018-05-24 | 2019-12-03 | 长鑫存储技术有限公司 | Reduce the manufacturing method and semiconductor memory of unit contact deficiency |
KR20200073817A (en) * | 2018-12-14 | 2020-06-24 | 삼성전자주식회사 | Semiconductor device including spacer and method of manufacturing the same |
CN113540091A (en) * | 2021-07-08 | 2021-10-22 | 长鑫存储技术有限公司 | Semiconductor device structure and preparation method |
CN114725018A (en) * | 2021-01-04 | 2022-07-08 | 长鑫存储技术有限公司 | Memory and preparation method thereof |
US11557596B2 (en) | 2020-07-17 | 2023-01-17 | Samsung Electronics Co., Ltd. | Semiconductor memory device |
WO2023035739A1 (en) * | 2021-09-10 | 2023-03-16 | International Business Machines Corporation | Subtractive patterning of interconnect structures |
WO2024027332A1 (en) * | 2022-08-02 | 2024-02-08 | 长鑫存储技术有限公司 | Preparation method for semiconductor structure and semiconductor structure |
US11980025B2 (en) | 2021-09-23 | 2024-05-07 | Samsung Electronics Co., Ltd. | Semiconductor device including carbon-containing contact fence |
US12020949B2 (en) | 2021-09-10 | 2024-06-25 | International Business Machines Corporation | Subtractive patterning of interconnect structures |
-
2016
- 2016-03-03 KR KR1020160025668A patent/KR20170103204A/en unknown
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110534515A (en) * | 2018-05-24 | 2019-12-03 | 长鑫存储技术有限公司 | Reduce the manufacturing method and semiconductor memory of unit contact deficiency |
KR20200073817A (en) * | 2018-12-14 | 2020-06-24 | 삼성전자주식회사 | Semiconductor device including spacer and method of manufacturing the same |
US10825819B2 (en) | 2018-12-14 | 2020-11-03 | Samsung Electronics Co., Ltd. | Semiconductor device including spacer and method of manufacturing the same |
US11282841B2 (en) | 2018-12-14 | 2022-03-22 | Samsung Electronics Co., Ltd. | Method of manufacturing semiconductor device including spacer |
US11557596B2 (en) | 2020-07-17 | 2023-01-17 | Samsung Electronics Co., Ltd. | Semiconductor memory device |
CN114725018A (en) * | 2021-01-04 | 2022-07-08 | 长鑫存储技术有限公司 | Memory and preparation method thereof |
CN113540091A (en) * | 2021-07-08 | 2021-10-22 | 长鑫存储技术有限公司 | Semiconductor device structure and preparation method |
CN113540091B (en) * | 2021-07-08 | 2024-02-09 | 长鑫存储技术有限公司 | Semiconductor device structure and preparation method |
WO2023035739A1 (en) * | 2021-09-10 | 2023-03-16 | International Business Machines Corporation | Subtractive patterning of interconnect structures |
US12020949B2 (en) | 2021-09-10 | 2024-06-25 | International Business Machines Corporation | Subtractive patterning of interconnect structures |
US11980025B2 (en) | 2021-09-23 | 2024-05-07 | Samsung Electronics Co., Ltd. | Semiconductor device including carbon-containing contact fence |
WO2024027332A1 (en) * | 2022-08-02 | 2024-02-08 | 长鑫存储技术有限公司 | Preparation method for semiconductor structure and semiconductor structure |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7795620B2 (en) | Transistor structure and dynamic random access memory structure including the same | |
US9997534B2 (en) | Vertical memory devices | |
KR102238951B1 (en) | Semiconductor device with air gap and method for fabricating the same | |
KR101986145B1 (en) | Semiconductor device with buried bitline and method for manufacturing the same | |
TWI493657B (en) | Semiconductor device with buried bit lines interconnected to one-side-contact and fabrication method thereof | |
US8120101B2 (en) | Semiconductor constructions and transistors, and methods of forming semiconductor constructions and transistors | |
KR20170103204A (en) | Method for manufacturing semiconductor device | |
KR20190037845A (en) | Semiconductor device with air gap and method for fabricating the same | |
KR20190058079A (en) | Vertical memory devices and methods of manufacturing the same | |
CN108735744B (en) | Semiconductor memory device and method of manufacturing the same | |
KR20180030967A (en) | A three-dimensional memory device having metal and silicide control gates | |
CN105374826A (en) | Three-dimensional semiconductor device and manufacture method thereof | |
US6432774B2 (en) | Method of fabricating memory cell with trench capacitor and vertical transistor | |
US20120112269A1 (en) | Semiconductor device and method of manufacturing the same | |
US20180166529A1 (en) | Semiconductor memory devices and methods of fabricating the same | |
KR20150137224A (en) | Semiconductor device with air gap and method for fabricating the same | |
KR20140082147A (en) | Semiconductor device having buried metal silicide layer and method of fabricating the same | |
KR20120078917A (en) | Semiconductor device and method for forming the same | |
US20210320008A1 (en) | Method for fabricating semiconductor device | |
US20060003536A1 (en) | Method for fabricating a trench capacitor with an insulation collar which is electrically connected to a substrate on one side via a buried contact, in particular for a semiconductor memory cell | |
US20230422470A1 (en) | Method of fabricating semiconductor device | |
US20230253318A1 (en) | Semiconductor device | |
US20240162281A1 (en) | Semiconductor device | |
WO2023236284A1 (en) | Semiconductor structure and manufacturing method therefor | |
US20220352198A1 (en) | Three-dimensional memory device with intermetallic barrier liner and methods for forming the same |