KR20170072687A - UV Light Emitting Device - Google Patents

UV Light Emitting Device Download PDF

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Publication number
KR20170072687A
KR20170072687A KR1020150181169A KR20150181169A KR20170072687A KR 20170072687 A KR20170072687 A KR 20170072687A KR 1020150181169 A KR1020150181169 A KR 1020150181169A KR 20150181169 A KR20150181169 A KR 20150181169A KR 20170072687 A KR20170072687 A KR 20170072687A
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KR
South Korea
Prior art keywords
light emitting
substrate
electrode
emitting device
area
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Application number
KR1020150181169A
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Korean (ko)
Inventor
장성규
이규호
채종현
조홍석
Original Assignee
서울바이오시스 주식회사
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Priority to KR1020150181169A priority Critical patent/KR20170072687A/en
Priority to PCT/KR2016/012460 priority patent/WO2017078368A1/en
Priority to TW105135399A priority patent/TWI613836B/en
Publication of KR20170072687A publication Critical patent/KR20170072687A/en
Priority to US15/971,974 priority patent/US20180261723A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/405—Reflective materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)

Abstract

One embodiment of the present invention is a semiconductor device comprising: a substrate; And a light emitting diode provided on one surface of the substrate, the light emitting diode including a first type semiconductor layer, an active layer and a second type semiconductor layer, wherein the area of the substrate / the light emitting area of the light emitting diode is 6.5 A light emitting device is provided.

Description

[0002] UV light emitting devices

The present invention relates to an ultraviolet light emitting device, and more particularly, to an ultraviolet light emitting device capable of improving light extraction efficiency.

In the ultraviolet light emitting device, a large amount of ultraviolet light can not be outputted to the outside, and ultraviolet light is absorbed or extinguished inside the ultraviolet light emitting device, resulting in a problem of low light extraction efficiency.

In order to solve such a problem, there has been studied a technique for improving the extraction efficiency of light extracted to the outside of the substrate by forming the substrate to have a thickness exceeding 120 탆.

However, if the thickness of the substrate is increased excessively, it is not easy to divide from the wafer into individual chips, and due to the increased thickness, there may be restrictions on lens attachment when packaged.

The present invention provides an ultraviolet light emitting device capable of improving light extraction efficiency by increasing or optimizing an area of a substrate with respect to the same light emitting area.

The objects of the present invention are not limited to those described above, and other objects and advantages of the present invention which are not mentioned can be understood by the following description.

An ultraviolet light-emitting device according to an embodiment of the present invention includes: a substrate having a first surface and a second surface opposite to the first surface; And a light emitting diode formed on a first surface of the substrate and including a first semiconductor layer, an active layer for emitting ultraviolet light, and a second semiconductor layer, wherein the area of the substrate / the light emitting area of the light emitting diode is 6.5 Lt; / RTI >

In one embodiment, the thickness of the substrate may be 200 [mu] m to 400 [mu] m.

In one embodiment, the area of the substrate may be 350 μm * 410 μm to 550 μm * 550 μm.

In one embodiment, the substrate may be at least one substrate selected from the group consisting of sapphire (Al 2 O 3 ), SiC, Si, GaAs, GaN, ZnO, Si, GaP, InP, Ge and AlN.

In one embodiment, a plurality of modified regions may be formed on the second surface or side surface of the substrate.

In one embodiment, the light emitting area of the LED can be 35,000㎛ 2~ 40,000㎛ 2.

In one embodiment, the light emitting area of the light emitting diode may be the area of the active layer.

In one embodiment, the semiconductor device further includes a first contact electrode formed on the first-type semiconductor layer, and the first contact electrode may include a reflective material.

In one embodiment, the light emitting device may further include a submount in which the light emitting device is bonded in a flip chip form.

According to the embodiment of the present invention, by increasing the planar area of the substrate, the side area of the substrate from which light is extracted also increases without increasing the thickness of the substrate, so that the light extracting effect can be enhanced.

It should be understood that the effects of the present invention are not limited to the above effects and include all effects that can be deduced from the detailed description of the present invention or the configuration of the invention described in the claims.

1 is a plan view showing a light emitting device according to an embodiment of the present invention.
2 is a cross-sectional view taken along the line "A-A '" in FIG.
3 is a cross-sectional view illustrating a state in which a light emitting device according to an embodiment of the present invention is mounted on a submount.
4 is a cross-sectional view illustrating a light emitting device according to another embodiment of the present invention.
5 is a perspective view illustrating a light emitting device package manufactured using a light emitting device according to an embodiment of the present invention.
6 is a graph showing emission power Po according to a thickness of a substrate of a light emitting device assembly according to an embodiment of the present invention.
7A to 7D are photographs showing plan and cross-sectional views of light emitting devices of various sizes, respectively, applied to the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described with reference to the accompanying drawings. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. In order to clearly illustrate the present invention in the drawings, portions not related to the description are omitted, and like reference numerals are assigned to similar components throughout the specification.

Throughout the specification, when a part is referred to as being "connected" to another part, it includes not only "directly connected" but also "indirectly connected" . Also, when an element is referred to as "comprising ", it means that it can include other elements, not excluding other elements unless specifically stated otherwise.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 is a plan view showing a light emitting device according to an embodiment of the present invention.

Referring to FIG. 1, the light emitting device 100 according to an embodiment of the present invention may include a first bump electrode 151 and a second bump electrode 152 spaced from one surface of a substrate.

The first bump electrode 151 may be formed on the first pad electrode 131 and the first pad electrode 131 may be formed on the first contact electrode 131. The first contact electrode 141 is an electrode for forming an ohmic contact property with the first-type semiconductor layer. In order to improve the current dispersion of the ultraviolet light-emitting device, the first contact electrode 141 may include an exposed region . The first contact electrode 141 may include a reflective material.

The reflective material reflects ultraviolet light reflected from the substrate 110 toward the first contact electrode 141 side toward the substrate 110 side, thereby improving light extraction efficiency.

The reflective material may be formed of a metal material having excellent conductivity. The reflective material may include, for example, Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, In particular, in one embodiment of the present invention, the reflective material may be Al with high reflectance in the ultraviolet wavelength band, and the reflective material may be formed of a matrix structure of the islands, a plurality of lines or a mesh structure.

The second bump electrode 152 may be formed on the second pad electrode 132 and the second pad electrode 132 may be formed on the second contact electrode 142. The second contact electrode 142 may be formed on the second-type semiconductor layer.

On both sides of the second bump electrode 152, the second pad electrode 132, and the second contact electrode 142, concave portions may be formed concavely inwardly. That is, the concave portion may be formed symmetrically with the first bump electrode 151, the first pad electrode 131, and the first contact electrode 141 adjacent to the first bump electrode 151 and the opposite side.

2 is a cross-sectional view of a light emitting device according to an embodiment of the present invention, taken along line A-A '' of FIG.

Referring to FIG. 2, the light emitting device 100 according to an embodiment of the present invention may be an ultraviolet light emitting device capable of emitting light in an ultraviolet region. For example, the ultraviolet light emitting device according to one embodiment may emit deep ultraviolet light of 360 nm or less.

The ultraviolet light emitting device according to an embodiment of the present invention may include a substrate 110 and a light emitting diode 120.

The substrate 110 is for growing a semiconductor single crystal and may have a first surface 110a and a second surface 110b opposite to the first surface 110a.

The substrate 110 may be made of zinc oxide (ZnO), gallium nitride (GaN), silicon carbide (SiC), aluminum nitride (AlN) or the like. However, since the degree of orientation is high, Transparent materials including sapphire without sapphire may be mainly used.

A buffer layer (not shown) for relieving lattice mismatch between the substrate 110 and the first-type semiconductor layer 121 may be further provided on the first surface 110a of the substrate 110. [ The buffer layer may be composed of a single layer or a plurality of layers, and may consist of a low-temperature buffer layer and a high-temperature buffer layer when the layer is composed of a plurality of layers.

The light emitting diode 120 is a light emitting structure that converts energy resulting from the recombination of electrons and holes into light. The light emitting diode 120 processes the surface of the substrate 110 through a wet or dry process, and forms a semiconductor thin film .

The light emitting diode 120 may include a first type semiconductor layer 121, an active layer 122 and a second type semiconductor layer 123 which are sequentially stacked on a first surface 110a of the substrate 110.

The first type semiconductor layer 121 may be provided on the first surface 110a of the substrate 110 and may be partially exposed as shown in FIG. And a part of the second-type semiconductor layer 123 may be exposed by mesa etching. A portion of the first-type semiconductor layer 121 may also be etched during the mesa etching.

The first-type semiconductor layer 121 is formed of In x Al y Ga 1 -xy N (0? X? 1, 0? Y? 1, 0? X + y? 1) doped with a first type impurity, ) Group III-V compound semiconductors, and may be a single layer or a plurality of layers. As the N-type conductive impurity, Si, Ge, Sn or the like can be used.

The active layer 122 may be provided on the first type semiconductor layer 121 and the active layer 122 may be formed on the first type semiconductor layer 121 and the second type semiconductor layer 123, To generate light. According to one embodiment, the active layer 122 may have a multi-quantum well structure to enhance coupling efficiency of electron-holes. The compositional element and the composition ratio can be determined so that the active layer 122 emits ultraviolet light having a desired wavelength of light, for example, a peak wavelength of 200 nm to 360 nm.

The ultraviolet light generated in the active layer 122 may be composed of TE polarized light and TM polarized light. The TM polarized light can proceed in a direction parallel to the plane of the active layer 122, while the TE polarized light proceeds in the direction perpendicular to the plane of the active layer 122. [

However, most of ultraviolet light is TM polarized light. However, since the side surface of the light emitting diode 120, particularly, the active layer 122 has a very small size compared to the upper surface or the back surface of the active layer 122, the amount of ultraviolet light extracted to the outside through the side surface of the active layer 122 is very small . Therefore, the amount of ultraviolet light emitted to the outside through the substrate 110 is much lower than that of visible light.

One embodiment of the present invention maximizes the side volume of the substrate 110 from which ultraviolet light is extracted by maximizing the area of the substrate 110 within an allowable range. The allowable range will be described later in detail.

The second-type semiconductor layer 123 may be formed on the active layer 122 and the second-type semiconductor layer 123 may include a second-type impurity such as In x Al y Ga 1 -x- y N (0? x? 1, 0? y? 1, 0? x + y? 1) The second-type semiconductor layer 123 may be a single layer or a plurality of layers.

A first pad electrode 131 and a second pad electrode 132 may be provided on the surfaces of the first and second semiconductor layers 121 and 123. The first pad electrode 131 and the second pad electrode 132 may include Ni, Cr, Ti, Al, Ag, or Au. The first pad electrode 131 may be electrically connected to the exposed portion of the first semiconductor layer 121 and the second pad electrode 132 may be electrically connected to the exposed portion of the second semiconductor layer 123. [ Can be connected.

A step pad layer 133 may be further formed between the first type semiconductor layer 121 and the first pad electrode 131. The step pad layer 133 compensates the step so that the phase of the first pad electrode 131 corresponds to the phase of the second pad electrode 132. That is, the first pad electrode 131 may be formed at a lower position than the second pad electrode 132 due to the mesa etching of the first type semiconductor layer 121, The first pad electrode 131 and the second pad electrode 132 may be in phase with each other through the stepped pad layer 133 formed on the first pad electrode 131. [ The step pad layer 133 may include, for example, Ti and Au.

The first contact electrode 141 and the second contact electrode 142 are formed between the first type semiconductor layer 121 and the stepped pad layer 133 and between the second type semiconductor layer 123 and the second pad electrode 132, 2 contact electrodes 142 may be further included. The first contact electrode 141 may include, for example, Cr, Ti, Al, and Au, and the second contact electrode 142 may include, for example, Ni and Au.

In an embodiment of the present invention, the light emitting device 100 may further include a passivation layer 160 that protects the lower light emitting diode 120 from the external environment.

The passivation layer 160 may be formed of an insulating film including a silicon oxide film or a silicon nitride film. The passivation layer 160 may have openings exposing the surface of the first pad electrode 131 and a portion of the surface of the second pad electrode 132. [

3, the light emitting device 100 may be mounted on the submount 200 in the form of a flip chip. In this case, the light emitting device 100 may be electrically connected to the submount 200, And may further include a bump electrode 151 and a second bump electrode 152.

The first bump electrode 151 may be provided on the first pad electrode 131 and the second bump electrode 152 may be provided on the second pad electrode 132. The first bump electrode 151 and the second bump electrode 152 may include, for example, Ti and Au Cr.

The submount 200 includes a first electrode layer 210 and a second electrode layer 220 on one surface of the first electrode layer 210 and the second electrode layer 220. The submount 200 has a first electrode layer 210 and a second electrode layer 220, The electrode 151 and the second bump electrode 152 may be electrically and physically connected.

At this time, the bump electrodes 151 and 152 may be formed to cover the surfaces of the pad electrodes 131 and 132 and a part of the surface of the passivation layer 160. A part of the passivation layer 160 is sandwiched between the pad electrodes 131 and 132 and the bump electrodes 151 and 152 and the bump electrodes 151 and 152 are connected to the pad electrodes 131 and 152, 132 and a portion of the surface of the passivation layer 160.

Meanwhile, the substrate 110 may be formed as a hexahedron having a predetermined length, width, and thickness. For example, the thickness of the substrate 110 may be 200 mu m to 400 mu m.

As the area of one side surface of the substrate 110 increases, the side surface area of the substrate from which light is extracted also increases, so that the increase of the light amount can be induced without increasing the thickness of the substrate. Can be minimized. Therefore, the larger the area of the substrate within the allowable range, the better.

However, even if the total area of the substrate 110 is increased, light loss may occur when the side of the substrate from which the light is extracted increases beyond the critical point. Therefore, within the range satisfying the substrate area / light emitting area of the light emitting diode 6.5, The extraction efficiency can be optimized.

In this case, the area of the substrate may be the area of the first surface 110a of the substrate 110, and the area of the light emitting diode 120 may be the area of the active layer 122. For example, the substrate 110 may have an area of 350 μm * 410 μm to 650 μm * 650 μm, and the light emitting diode 120 may have a light emitting area of 35,000 μm 2 to 40,000 μm 2 .

That is, in one embodiment of the present invention, when the thickness of the substrate 110 is in the range of 200 to 400 占 퐉 and the light emitting area of the light emitting diode 120 is fixed, the substrate area / light emitting area of the light emitting diode is 6.5 or less It is possible to provide a light emitting device having a higher luminous efficiency than a conventional light emitting device. This will be described again with reference to FIG.

On the other hand, when the area of the substrate increases, the distance between the first bump electrode (or the first pad electrode) and the second bump electrode (or the second pad electrode) formed on the first surface 110a of the substrate 110 The distance between each bump electrode and the rim of the substrate may be increased. In this case, the current concentration may occur between the bump electrodes, and the current dispersion may not be uniformly distributed over the entire substrate. Therefore, it is necessary to maintain the same interval between the bump electrodes.

In addition, in the embodiment of the present invention, the first contact electrode 141 may include a reflective material. The reflective material reflects ultraviolet light reflected from the substrate 110 toward the first contact electrode 141 side toward the substrate 110 side, thereby improving light extraction efficiency.

The reflective material may be formed of a metal material having excellent conductivity. The reflective material may include, for example, Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, In particular, in one embodiment of the present invention, the reflective material may be Al with high reflectance in the ultraviolet wavelength band, and the reflective material may be formed of a matrix structure of the islands, a plurality of lines or a mesh structure.

A method of manufacturing a light emitting device according to an embodiment of the present invention will be described with reference to FIGS. 2 and 3. FIG.

First, a substrate 110 is prepared, and a plurality of semiconductor layers including a first type semiconductor layer 121, an active layer 122, and a second type semiconductor layer 123 are sequentially formed on one surface of a substrate 110 . The substrate 110 can be prepared as a sapphire substrate having a thickness of 200 mu m to 400 mu m. At this time, the substrate 110 may be patterned using a mask so that light emitting devices of various sizes such as 350 * 410, 450 * 450, 550 * 550, 650 * 650 are realized on one wafer.

A plurality of semiconductor layers such as the first type semiconductor layer 121, the active layer 122 and the second type semiconductor layer 123 may be formed by a method of forming known semiconductor layers such as MOCVD, molecular beam growth, epitaxial growth Method or the like.

Next, the first-type semiconductor layer 121, the active layer 122, and the second-type semiconductor layer 123 are etched to form a plurality of light emitting diodes 120.

A mesa etching is performed so that a part of the separated first type semiconductor layer 121 is exposed to form a plurality of light emitting diodes including the first type semiconductor layer 121, the active layer 122 and the second type semiconductor layer 123 120).

Thereafter, the first pad electrode 131 may be formed on the surface of the first-type semiconductor layer 121, and the second pad electrode 132 may be formed on the surface of the second-type semiconductor layer 123.

The first contact electrode 141 and the second contact electrode 142 which are in contact with the semiconductor layers 121 and 123 through the openings are formed before forming the pad electrodes 131 and 132, The first pad electrode 131 and the second pad electrode 132 may be formed on the first contact electrode 141 and the second contact electrode 142, respectively.

Next, a first type semiconductor layer 121, a second type semiconductor layer 123, a first pad electrode 131 and a second pad electrode 132 of the light emitting diodes 120 are formed on the entire surface of the substrate 110 A passivation layer 160 is formed. At this time, the passivation layer 160 may be formed with openings exposing a part of the surface of the first pad electrode 131 and the second pad electrode 132.

A first bump electrode 151 and a second bump electrode 152 are formed on the first pad electrode 131 and the second pad electrode 132 to form a plurality of The light emitting device 100 as shown in FIG. 2 is manufactured by forming the light emitting diodes 120 and dividing the substrate 110 to separate the light emitting diodes 120 individually.

In addition to the step of dividing the substrate 110 to manufacture the light emitting device 100, a submount 200 having a first electrode 210 and a second electrode 220 on one surface thereof is prepared.

The first bump electrode 151 of the light emitting device 100 and the first electrode layer 210 of the submount 200 correspond to each other and the second bump electrode 152 of the light emitting device 100 and the submount The electrode layers 210 and 220 and the bump electrodes 151 and 152 are flip-bonded after aligning the submount 200 and the light emitting device 100 so that the second electrode layers 220 of the first electrode layers 200 correspond to each other The light emitting device assembly as shown in FIG. At this time, the flip bonding can be performed by a thermal ultrasound method or a thermocompression bonding method.

4 is a cross-sectional view illustrating a light emitting device according to another embodiment of the present invention.

Referring to FIG. 4, the light emitting device 100 according to another embodiment of the present invention includes a substrate 110 and a second surface 110b on which a plurality of modifications Region 111. [0033]

That is, the light emitting device 100 according to another embodiment of the present invention includes the modified regions 111 such as protrusions on the side surface and the second surface 110b of the substrate 110, There is an effect of providing a light emitting device having higher light emitting efficiency by increasing light extraction efficiency of light.

The modified regions 111 may be formed on the side surface and the second surface 110b of the substrate 110 in advance or may be formed by using a blast or a laser beam during or after the step of dividing the substrate 110 You may.

The height of the modified regions 111 may be 100 nm to 1 탆. The modified regions 111 may be arranged at regular intervals or irregularly on the side surface and the second surface 110b of the substrate 110 and may be provided in the same shape or in various shapes, Size.

5 is a perspective view illustrating a light emitting device package manufactured using a light emitting device according to an embodiment of the present invention.

Referring to FIG. 5, a light emitting device package 1000 according to an embodiment of the present invention may include a package body 1100 and a light emitting device 100 mounted on the package body 1100.

The cavity 1110 may be formed on one side surface of the package body 1100 so that the inclined surface 1111 is formed around the light emitting device 100. The inclined plane 1111 can increase the light extraction efficiency of the light emitting device package.

The package body 1100 may be divided into the first electrode unit 1200 and the second electrode unit 1300 by the insulating unit 1400 and electrically separated from each other.

For example, when the light emitting device 100 emits ultraviolet light, the package body 1100 may be formed of aluminum (Al), aluminum (Al), aluminum And can be implemented as a material. Accordingly, the first electrode unit 1200 and the second electrode unit 1300 can increase the light efficiency by reflecting the light generated from the light emitting device 100, It can play a role of discharging.

The light emitting device 100 may be electrically connected to the first electrode unit 1200 and the second electrode unit 1300 through a connection member 1600 such as a metal wire to receive power.

The light emitting device 100 may be mounted on the cavity 1110 of the package body 1100 while being mounted on the submount and electrically connected to the first electrode layer 1200 and the second electrode layer 1300 by a metal wire Can be connected. Reference numeral 1500 denotes a zener diode, which may also be referred to as a constant voltage diode.

FIG. 6 is a graph showing the light emitting power Po according to the substrate area of the light emitting device according to the embodiment of the present invention, and FIGS. 7A to 7D are photographs showing plan and cross-sectional views of the light emitting device applied to the present invention, respectively.

6 to 7D, a light emitting device according to an embodiment of the present invention is prepared, a current of 20 mA is applied to the light emitting device to measure the light emitting power Po emitted from the light emitting device, 1000), and then the emission power was measured under the same conditions.

At this time, the thickness of the substrate of the light emitting device and the light emitting device package was 250 m, and the results are shown in Table 1 below.

Substrate area 350 탆 * 410 탆 450 탆 * 450 탆 550 탆 * 550 탆 650 μm * 650 μm 143,500 μm 2 202, 520 μm 2 302, 500 μm 2 422, 500 μm 2 Light emitting area 38, 380 탆 2 38, 380 탆 2 38, 380 탆 2 38, 380 탆 2 Substrate area /
Light emitting area 3.74 5.28 7.88 11.01

When a current of 20 mA is applied to the light emitting device package 1000, the light emitting power is 0.857 mW when the area of the substrate 110 is 350 μm * 410 μm as shown in FIG. 7A, and 450 μm * 450 μm The area of the substrate is 450 mu m * 450 mu m and 550 mu m * 550 mu m in the case of 650 mu m * 650 mu m as shown in Fig. 7D, Lt; 2 > / [mu] m. At this time, it is assumed that the light emitting area of the light emitting diode is maintained at 38,380 탆 2 .

These results show that when the area of the substrate is larger than necessary, the amount of light extracted to the side of the substrate is lost.

At this time, the contact point of the slope and the light emitting power, which represents the ratio of the substrate area / light emitting area of the light emitting diode, is 6.5. In the light emitting device and the light emitting device package according to the embodiment of the present invention, It can be seen that the light emitting power is further increased as the area of the substrate is increased as the area of the light emitting device package is increased. Therefore, a substrate satisfying the above conditions is applied to the light emitting device, So that the light extraction efficiency can be further improved.

At this time, in the embodiment of the present invention, experiments were performed using a light emitting device and a light emitting device package having a minimum substrate area of 350 μm * 410 μm to 650 μm * 650 μm, but this is only one embodiment, For example, a substrate having an area of 350 mu m * 410 mu m or less is also applicable. Therefore, in the embodiment of the present invention, the minimum value of the substrate area / light emitting area of the light emitting diode does not mean 3.74.

It will be understood by those skilled in the art that the foregoing description of the present invention is for illustrative purposes only and that those of ordinary skill in the art can readily understand that various changes and modifications may be made without departing from the spirit or essential characteristics of the present invention. will be.

That is, it should be understood that the embodiments described above are illustrative in all aspects and not restrictive. For example, each component described as a single entity may be distributed and implemented, and components described as being distributed may also be implemented in a combined form.

Accordingly, the scope of the present invention is defined by the appended claims, and all changes or modifications derived from the meaning and scope of the claims and their equivalents should be construed as being included within the scope of the present invention.

100: Light emitting element
110; Substrate 111: modified region
120: light emitting diode 121: first type semiconductor layer
122: active layer 123: second-type semiconductor layer
131: first pad electrode 132: second pad electrode
141: first contact electrode 142: second contact electrode
151: first bump electrode 152: second bump electrode
160: Passivation layer
200: Submount 210: First electrode layer
220: second electrode layer

Claims (9)

A substrate having a first surface and a second surface opposite the first surface;
And a light emitting diode formed on a first surface of the substrate, the light emitting diode including a first semiconductor layer, an active layer emitting ultraviolet light, and a second semiconductor layer,
Wherein the area of the substrate / the light emitting area of the light emitting diode is 6.5.
The method according to claim 1,
Wherein the thickness of the substrate is 200 mu m to 400 mu m.
The method according to claim 1,
Wherein an area of the substrate is 350 占 퐉 * 410 占 퐉 to 550 占 퐉 * 550 占 퐉.
The method according to claim 1,
Wherein the substrate is at least one substrate selected from the group consisting of sapphire (Al 2 O 3 ), SiC, Si, GaAs, GaN, ZnO, Si, GaP, InP, Ge and AlN.
The method according to claim 1,
Wherein a plurality of modified regions are formed on the second surface or the side surface of the substrate.
The method according to claim 1,
Wherein the light emitting area of the light emitting diode is 35,000 mu m 2 to 40,000 mu m 2 .
The method according to claim 1,
Wherein an emission area of the light emitting diode is an area of the active layer.
The method according to claim 1,
And a first contact electrode formed on the first-type semiconductor layer, wherein the first contact electrode comprises a reflective material.
The method according to claim 1,
And a sub-mount on which the light emitting device is bonded in a flip chip form.
KR1020150181169A 2015-11-05 2015-12-17 UV Light Emitting Device KR20170072687A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020150181169A KR20170072687A (en) 2015-12-17 2015-12-17 UV Light Emitting Device
PCT/KR2016/012460 WO2017078368A1 (en) 2015-11-05 2016-11-01 Ultraviolet light emitting device and method for manufacturing same
TW105135399A TWI613836B (en) 2015-11-05 2016-11-02 A uv light emitting device and method of manufacturing the same
US15/971,974 US20180261723A1 (en) 2015-11-05 2018-05-04 Ultraviolet light emitting device and method for manufacturing same

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