KR20170056236A - Metal welding solar cell - Google Patents
Metal welding solar cell Download PDFInfo
- Publication number
- KR20170056236A KR20170056236A KR1020150159649A KR20150159649A KR20170056236A KR 20170056236 A KR20170056236 A KR 20170056236A KR 1020150159649 A KR1020150159649 A KR 1020150159649A KR 20150159649 A KR20150159649 A KR 20150159649A KR 20170056236 A KR20170056236 A KR 20170056236A
- Authority
- KR
- South Korea
- Prior art keywords
- solar cell
- electrode
- semiconductor layer
- silver paste
- present
- Prior art date
Links
- 238000004021 metal welding Methods 0.000 title abstract description 10
- 239000004065 semiconductor Substances 0.000 claims abstract description 23
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910052709 silver Inorganic materials 0.000 claims abstract description 17
- 239000004332 silver Substances 0.000 claims abstract description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 22
- 229910052710 silicon Inorganic materials 0.000 claims description 22
- 239000010703 silicon Substances 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 238000003466 welding Methods 0.000 abstract 2
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 239000004020 conductor Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000002835 absorbance Methods 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 239000004566 building material Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 239000003208 petroleum Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02016—Circuit arrangements of general character for the devices
- H01L31/02019—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02021—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
본 발명은 태양전지 제조에 관한 것으로, 와인딩 와이어를 이용한 태양전지에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solar cell manufacturing method, and more particularly, to a solar cell using a winding wire.
태양전지 세계시장은 벌크실리콘 기반의 태양전지가 95% 이상을 차지하고 있으며, 주로 대규모 태양광 발전시설에 이용되고 있다. 하지만, 태양전지가 사용될 수 있는 제품의 범위는 대규모 태양광 발전에서부터 소형 전자기기에 이르기까지 매우 다양하기 때문에, 건물 외벽 또는 유리창호와 같은 건자재 용도 및 이동발전 용도 등에도 적합한 태양전지까지 용도 맞춤형 태양전지 기술개발이 필요하다. The global market for solar cells accounts for more than 95% of bulk silicon-based solar cells and is mainly used in large-scale PV facilities. However, since the range of products in which solar cells can be used is very diverse, ranging from large-scale solar power generation to small-sized electronic equipment, solar cells suitable for use in building materials such as exterior walls or glass windows, Battery technology development is needed.
태양 에너지와 같은 무공해 청정 에너지를 석탄, 석유 등의 화학 연료 대신 새로운 에너지원으로 이용하려는 연구는 전세계적으로 활발히 진행되고 있다. 이 중 태양전지는 태양 에너지를 직접 전기 에너지로 전환시키는 장치이다. 태양전지의 원리를 설명하자면, p형과 n형의 반도체를 접합시킨 구조를 갖는 pn접합형 반도체인 태양 전지를 광에 노출시키면 전자와 정공이 생성되고, 이렇게 생성된 전자와 정공이 전극으로 이동하며 기전력이 발생되어 광발전이 일어나게 된다. 이러한 태양전지는 그 소재에 따라 크게 실리콘계 태양전지 및 화합물 반도체계 태양전지로 나눌 수 있다. Research to utilize pollution-free clean energy such as solar energy as a new energy source instead of chemical fuel such as coal and petroleum is being actively carried out all over the world. Among them, solar cells are devices that convert solar energy directly into electrical energy. To explain the principle of solar cells, when a solar cell, which is a pn junction type semiconductor having a structure of p-type and n-type semiconductor, is exposed to light, electrons and holes are generated, And an electromotive force is generated and photovoltaic generation occurs. Such a solar cell can be divided into a silicon-based solar cell and a compound semiconductive solar cell depending on the material thereof.
실리콘계 태양전지는 주로 건식 태양전지라 불리우는 단결정 실리콘이 주로 사용되고 있는데, 가장 큰 장점은 박막형 태양전지로 제조될 수 있다는 것이다. 그러나 가격면에서 항공, 우주산업 같은 경우가 아니면 경쟁력을 갖추지 못한면이 있다. 따라서 상대적으로 제조원가가 저렴한 비정질 실리콘계 태양전지 또는 다결정질 실리콘계 태양전지의 사용이 증가하고 있는 실정이지만, 단결정 실리콘에 비하여 광전환효율이 낮은 단점이 있다. 또한, 장시간 빛에 노출되면 특성열화현상이 나타나서 시간이 갈수록 효율이 저하되며 고밀도 태양전지 모듈을 제조하는데 용이하지 않은 문제점이 있다.Silicon-based solar cells are mainly made of monocrystalline silicon, which is called a dry solar cell. The biggest advantage is that it can be made of thin-film solar cells. However, in terms of price, it is not competitive such as aviation, space industry. Accordingly, the use of amorphous silicon solar cells or polycrystalline silicon solar cells relatively low in manufacturing cost has been increasing, but there is a disadvantage in that the light conversion efficiency is lower than that of single crystal silicon. Also, when exposed to light for a long time, characteristic deterioration phenomenon appears, and the efficiency is lowered with time, and it is not easy to manufacture a high density solar cell module.
또한, 태양전지를 제조하기 위해서는 제 1 및 제 2 전극과 각각의 전극이 연결된 반도체층, 태양전지의 반사율을 낮추기 위한 반사방지막층(passivation)이 필요하다. 태양광 수광량을 높이기 위하여 상부에 형성하는 제 2 전극은 주로 투명전극인 ITO를 사용하는데, 투명전극은 금속에 비하여 저항이 높고 제조원가가 비싸다. 따라서 태양전지의 제조원가를 상승시키는 요인이다. 또한, 반사 방지막 형성 공정은 태양전지의 반사율을 낮추기 위한 방법으로 텍스쳐된 웨이퍼 표면에 얇은 막을 증착하는 공정으로, 반사방지막의 재료의 굴절률(n)과 두께에 따라서 빛의 반사도나 흡수도가 달라지므로 적절한 두께로 증착하는 공정 기술이 필요하다. In addition, in order to manufacture a solar cell, a semiconductor layer to which the first and second electrodes and electrodes are connected, and an antireflective layer (passivation) for lowering the reflectance of the solar cell are required. ITO, which is a transparent electrode, is mainly used as the second electrode formed on the upper part in order to increase the amount of sunlight received, and the transparent electrode has a higher resistance and a higher manufacturing cost than the metal. Therefore, the manufacturing cost of the solar cell is increased. In addition, the anti-reflection film forming process is a process for lowering the reflectance of the solar cell, and is a process for depositing a thin film on the surface of the textured wafer. Since the reflectance or absorbance of light varies depending on the refractive index (n) A process technique for depositing an appropriate thickness is required.
본 발명은 상기한 종래 기술의 문제점을 해결하기 위한 것으로, 면상구조에 한정되지 않는 태양전지를 제조함으로써 방향에 따른 광량의 제약과 상부전극을 투명전극으로 사용하는 제약을 극복할 수 있어 제조원가가 낮으면서도 고효율의 태양전지를 제공한다.SUMMARY OF THE INVENTION The present invention has been made in order to solve the problems of the prior art described above, and it is an object of the present invention to provide a solar cell which is not limited to a planar structure, While providing a highly efficient solar cell.
본 발명은 메탈 웰딩 태양전지에 관한 것이다. 본 발명의 메탈 웰딩 태양전지는 일렬횡대로 늘어선 다수의 와이어 형상의 제 1 전극; 상기 제 1 전극의 표면을 둘러싼 제 1 반도체층; 상기 제 1 반도체층 상부에 적층된 제 2 반도체층; 상기 제 2 반도체층을 접합하는 실버페이스트; 및 상기 제 1 전극과 가로지르는 방향이며 상기 제 2 반도체층 및 상기 실버패이스트와 접합하는 것을 특징으로 한다. The present invention relates to a metal-welding solar cell. The metal-welding solar cell of the present invention comprises a plurality of wire-shaped first electrodes arranged in a line-by-line manner; A first semiconductor layer surrounding a surface of the first electrode; A second semiconductor layer stacked on the first semiconductor layer; A silver paste joining the second semiconductor layer; And a direction crossing the first electrode, and is bonded to the second semiconductor layer and the silver paste.
그리고, 상기 제 1 반도체층의 상부에 위치하는 인트린직 실리콘층을 포함한다. And an intrinsic silicon layer disposed on the first semiconductor layer.
또한, 상기 제 2 전극은 실버페이스트인 것을 특징으로 한다.The second electrode may be a silver paste.
본 발명에 따른 메탈 웰딩 태양전지는 면상형태의 기판을 사용하지 않고, 와이어를 사용하여 반사 방지막 및 투명전극을 사용하지 않아도 되는 효과가 있다. The metal-welding solar cell according to the present invention does not use a substrate in the form of a plane, and does not use an antireflection film and a transparent electrode by using a wire.
도 1은 본 발명에 따른 메탈 웰딩 태양전지 기본셀을 도시한 사시도이다.
도 2내지 도 3은 본 발명에 따른 메탈 웰딩 태양전지 단면도이다.1 is a perspective view showing a basic cell of a metal-welding solar cell according to the present invention.
2 to 3 are sectional views of a metal-welding solar cell according to the present invention.
본 발명을 충분히 이해하기 위해서 본 발명의 바람직한 실시예를 첨부 도면을 참조하여 설명한다. 본 발명의 실시예는 여러 가지 형태로 변형될 수 있으며, 본 발명의 범위가 아래에서 상세히 설명하는 실시예로 한정되는 것으로 해석되어서는 안 된다. 본 실시예는 당업계에서 평균적인 지식을 가진 자에게 본 발명을 보다 완전하게 설명하기 위해서 제공되는 것이다. 따라서 도면에서의 요소의 형상 등은 보다 명확한 설명을 강조하기 위해서 과장되어 표현될 수 있다. 각 도면에서 동일한 구성은 동일한 참조부호로 도시한 경우가 있음을 유의하여야 한다. 본 발명의 요지를 불필요하게 흐릴 수 있다고 판단되는 공지 기능 및 구성에 대한 상세한 기술은 생략된다.For a better understanding of the present invention, a preferred embodiment of the present invention will be described with reference to the accompanying drawings. The embodiments of the present invention may be modified into various forms, and the scope of the present invention should not be construed as being limited to the embodiments described in detail below. The present embodiments are provided to enable those skilled in the art to more fully understand the present invention. Therefore, the shapes and the like of the elements in the drawings can be exaggeratedly expressed to emphasize a clearer description. It should be noted that the same components are denoted by the same reference numerals in the drawings. Detailed descriptions of well-known functions and constructions which may be unnecessarily obscured by the gist of the present invention are omitted.
이하 첨부된 도면들을 참조하여 메탈 웰딩 태양전지에 대하여 설명한다.Hereinafter, a metal-welding solar cell will be described with reference to the accompanying drawings.
도 1은 본 발명에 따른 메탈 웰딩 태양전지 기본셀을 도시한 사시도이다.1 is a perspective view showing a basic cell of a metal-welding solar cell according to the present invention.
롤러에 감긴 메탈 와이어를 제 1 전극(112)으로 사용한 태양전지 기본셀은 다수의 메탈와이어로 이루어진다. 메탈와이어는 구리(Cu) 또는 티타늄(Ti)을 사용할 수 있다. 다음으로, 제 1 전극(112)의 표면에 증착된 다수의 반도체층이 형성된다. 다수의 반도체층은 도시된 바와 같이 P타입 실리콘층(120), N타입 실리콘층(124)으로 적층될 수 있고, 도시되지는 않았으나 P타입 실리콘층(120), 인트린직 실리콘층(122), N타입 실리콘층(124)이 차례로 적층될 수 도 있다. 다음으로, 각각의 반도체층이 적층된 메탈와이어를 이어붙여 태양전지 기본셀을 형성하는데, 각각의 N타입 실리콘층(124)은 실버페이스트(126)로 용접한다. 용접된 실버페이스트(126)는 제 1 전극(122)과 평행하며, 이러한 실버페이스트(126)와 접촉되고 제 1 전극(122)과 수직인 방향으로 제 2 전극(128)이 적층된다. A solar cell basic cell using a metal wire wound around a roller as a
도 2내지 도 3은 본 발명에 따른 메탈 웰딩 태양전지 단면도이다.2 to 3 are sectional views of a metal-welding solar cell according to the present invention.
도시된 바와 같이, 전도성 물질이며, 와이어 형태의 제 1 전극(112)은 P타입 실리콘층(120)과 접촉하며 P타입 실리콘층(120)은 상부에 인트린직 실리콘층(122)을 포함하거나 또는 바로 N타입 실리콘층(124)을 적층할 수 있다. N타입 실리콘층(124)은 제 2 전극(128)과 접촉한다. 도시된 바와 같이 각각의 제 1 전극(112)의 둘레를 따라 적층된 N타입 실리콘층(124)은 각각 실버페이스트(126)로 용접된다. 따라서 사용되는 환경에 제약 없이 원하는 태양전지 사이즈를 제작할 수 있는 장점이 있다. 다음으로, 제 1 전극(112)의 방향을 가로지르는 방향으로 실버페이스트(126) 및 실버페이스트(126)로 각각 접합된 N타입 실리콘층(124)과 접촉하는 제 2 전극(128)이 상부에 적층된다. 제 1 전극(112)과 제 2 전극(128)이 서로 가로지르는 형상이므로, 본 발명에 따른 와이어 형상의 태양전지 집합체를 고정하는 역할을 함과 동시에 태양광을 흡수하는 개구부를 넓힐 수 있는 장점도 있다. 제 2 전극(128)은 전도성 물질로 제 1 전극(112)과 동일한 메탈와이어를 사용할 수 있으며, 또는 스크린 프린팅 방법으로 적층된 메탈층일 수도 있다. 상술한 바와 같이 제 2 전극(128)을 메탈와이어로 사용할 시에는 N타입 실리콘층(124)에 접촉하도록 실버페이스트(126) 웰딩하는 방법을 이용할 수 있다. 또는 실버페이스트(126)도 도전성을 갖기 때문에, 제 2 전극(128)을 실버페이스트(126)로 사용할 수 도 있다. As shown, the
이상에서 설명된 본 발명의 실시예는 예시적인 것에 불과하며, 본 발명이 속한 기술 분야의 통상의 지식을 가진 자라면 이로부터 다양한 변형 및 균등한 타 실시예가 가능하다는 점을 잘 알 수 있을 것이다. 그럼으로 본 발명은 상기의 상세한 설명에서 언급되는 형태로만 한정되는 것은 아님을 잘 이해할 수 있을 것이다. 따라서 본 발명의 진정한 기술적 보호 범위는 첨부된 특허청구범위의 기술적 사상에 의해 정해져야 할 것이다. 또한, 본 발명은 첨부된 청구범위에 의해 정의되는 본 발명의 정신과 그 범위 내에 있는 모든 변형물과 균등물 및 대체물을 포함하는 것으로 이해되어야 한다.It will be apparent to those skilled in the art that various modifications and equivalent arrangements may be made therein without departing from the spirit and scope of the invention as defined by the appended claims. Accordingly, it is to be understood that the present invention is not limited to the above-described embodiments. Accordingly, the true scope of the present invention should be determined by the technical idea of the appended claims. It is also to be understood that the invention includes all modifications, equivalents, and alternatives falling within the spirit and scope of the invention as defined by the appended claims.
112 : 제 1 전극
120 : P 타입 실리콘층
122 : 인트린직 실리콘층
124 : N 타입 실리콘층
126 : 실버 페이스트
128 : 제 2 전극112: first electrode 120: P-type silicon layer
122: Intrinsic silicon layer 124: N-type silicon layer
126: Silver paste 128: Second electrode
Claims (4)
상기 제 1 전극의 표면을 둘러싼 제 1 반도체층;
상기 제 1 반도체층 상부에 적층된 제 2 반도체층;
상기 제 2 반도체층을 접합하는 접합체; 및
상기 제 1 전극과 가로지르는 방향이며 상기 제 2 반도체층 및 상기 접합체와 접합하는 것을 특징으로 하는 메탈 웰딩 태양전지.A plurality of wire-shaped first electrodes arranged in a row in a row;
A first semiconductor layer surrounding a surface of the first electrode;
A second semiconductor layer stacked on the first semiconductor layer;
A junction body for bonding the second semiconductor layer; And
Wherein the first electrode and the second electrode are in a direction crossing the first electrode and are bonded to the second semiconductor layer and the junction body.
상기 제 1 반도체층의 상부에 위치하는 인트린직 실리콘층을 포함하는 것을 특징으로 하는 메탈 웰딩 태양전지.The method according to claim 1,
And an intrinsic silicon layer located on top of the first semiconductor layer.
상기 제 2 전극은 실버페이스트인 것을 특징으로 하는 실버페이스트 웰딩 태양전지.The method according to claim 1,
Wherein the second electrode is a silver paste.
상기 접합체는 실버페이스트 웰딩하는 것을 특징으로 하는 메탈웰딩 태양전지.The method according to claim 1,
Lt; RTI ID = 0.0 > 1, < / RTI > wherein the bonding body is silver paste-wired.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020150159649A KR101866309B1 (en) | 2015-11-13 | 2015-11-13 | Metal welding solar cell |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020150159649A KR101866309B1 (en) | 2015-11-13 | 2015-11-13 | Metal welding solar cell |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20170056236A true KR20170056236A (en) | 2017-05-23 |
KR101866309B1 KR101866309B1 (en) | 2018-06-11 |
Family
ID=59050563
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020150159649A KR101866309B1 (en) | 2015-11-13 | 2015-11-13 | Metal welding solar cell |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR101866309B1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110788447A (en) * | 2019-11-12 | 2020-02-14 | 南京引力工业焊接技术研究院有限公司 | Multi-power-supply parallel multi-wire efficient arc welding device and application thereof |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07221335A (en) * | 1993-12-09 | 1995-08-18 | Tonen Corp | Solar battery module |
JPH07221336A (en) * | 1993-12-09 | 1995-08-18 | Tonen Corp | Solar battery module |
JPH07297438A (en) * | 1994-04-27 | 1995-11-10 | Tonen Corp | Solar battery module |
JP2007250856A (en) * | 2006-03-16 | 2007-09-27 | Seiko Epson Corp | Photoelectric conversion element and photoelectric conversion device |
-
2015
- 2015-11-13 KR KR1020150159649A patent/KR101866309B1/en active IP Right Grant
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07221335A (en) * | 1993-12-09 | 1995-08-18 | Tonen Corp | Solar battery module |
JPH07221336A (en) * | 1993-12-09 | 1995-08-18 | Tonen Corp | Solar battery module |
JPH07297438A (en) * | 1994-04-27 | 1995-11-10 | Tonen Corp | Solar battery module |
JP2007250856A (en) * | 2006-03-16 | 2007-09-27 | Seiko Epson Corp | Photoelectric conversion element and photoelectric conversion device |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110788447A (en) * | 2019-11-12 | 2020-02-14 | 南京引力工业焊接技术研究院有限公司 | Multi-power-supply parallel multi-wire efficient arc welding device and application thereof |
Also Published As
Publication number | Publication date |
---|---|
KR101866309B1 (en) | 2018-06-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN107210368B (en) | Perovskite solar cell module | |
KR101890324B1 (en) | Solar cell module and ribbon assembly | |
US8158878B2 (en) | Thin film solar cell module | |
KR101091372B1 (en) | Solar cell apparatus | |
JP2012156459A (en) | Solar cell and solar cell module | |
KR101923658B1 (en) | Solar cell module | |
US20230144536A1 (en) | Designable shingled photovoltaic module and manufacturing method therefor | |
JP5420109B2 (en) | Multiple solar cell having PN junction and Schottky junction and manufacturing method thereof | |
KR20140095658A (en) | Solar cell | |
KR20090122728A (en) | Non-linear solar cell module | |
US20170323986A1 (en) | Photovoltaic module | |
KR101626929B1 (en) | Manufacturing method for multiple junction solar cell using compound thin film and multiple junction solar cell | |
KR20110080663A (en) | Solar cell apparatus | |
KR101411996B1 (en) | High efficiency solar cells | |
KR101866309B1 (en) | Metal welding solar cell | |
US20110303270A1 (en) | Solar cell structure having high photoelectric conversion efficiency and method of manufacturing the same | |
KR20160135408A (en) | Perovskite photovoltaic cell module | |
KR101502208B1 (en) | Solar cell array and thin-film solar module and production method therefor | |
JP3198451U (en) | 4 busbar solar cells | |
US20120145218A1 (en) | Thin film solar cell module | |
JP2006013173A (en) | Solar cell module | |
KR102000063B1 (en) | Solar cell module | |
KR102243640B1 (en) | Solar cell module | |
KR20100021540A (en) | High efficiency solar cells | |
KR101127054B1 (en) | Thin film solar cell |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
N231 | Notification of change of applicant | ||
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
AMND | Amendment | ||
E601 | Decision to refuse application | ||
AMND | Amendment | ||
X701 | Decision to grant (after re-examination) | ||
GRNT | Written decision to grant |