KR20170052309A - Crucible for evaporation of effusion cell - Google Patents
Crucible for evaporation of effusion cell Download PDFInfo
- Publication number
- KR20170052309A KR20170052309A KR1020150154606A KR20150154606A KR20170052309A KR 20170052309 A KR20170052309 A KR 20170052309A KR 1020150154606 A KR1020150154606 A KR 1020150154606A KR 20150154606 A KR20150154606 A KR 20150154606A KR 20170052309 A KR20170052309 A KR 20170052309A
- Authority
- KR
- South Korea
- Prior art keywords
- crucible
- crucible body
- evaporation source
- vacuum evaporation
- inlet
- Prior art date
Links
- 238000001704 evaporation Methods 0.000 title claims abstract description 10
- 230000008020 evaporation Effects 0.000 title claims abstract description 8
- 238000007738 vacuum evaporation Methods 0.000 claims abstract description 47
- 239000000463 material Substances 0.000 claims abstract description 30
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 26
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 26
- 239000010409 thin film Substances 0.000 claims abstract description 25
- 239000000919 ceramic Substances 0.000 claims abstract description 6
- 229910052751 metal Inorganic materials 0.000 claims description 26
- 239000002184 metal Substances 0.000 claims description 26
- 238000010438 heat treatment Methods 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 8
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 238000010521 absorption reaction Methods 0.000 abstract description 6
- 238000001816 cooling Methods 0.000 description 4
- 230000003247 decreasing effect Effects 0.000 description 4
- 239000000758 substrate Substances 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- 239000000470 constituent Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
-
- H01L21/203—
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4803—Insulating or insulated parts, e.g. mountings, containers, diamond heatsinks
- H01L21/4807—Ceramic parts
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The present invention relates to a crucible for a vacuum evaporation source, and more particularly, to a crucible for evaporation used in a vacuum evaporation source, in which a ceramic is used as a material of a crucible body containing a thin film forming material, It forms the crucible body in the same shape as an hourglass with a narrow inner diameter. By the open structure of the upper entrance of the crucible body as in the upper part of the hourglass, heat absorption is minimized and the temperature of the inlet is lowered. It is possible to prevent the aluminum from flowing over the inlet of the crucible body.
Description
The present invention relates to a crucible for a vacuum evaporation source, and more particularly, to a crucible for evaporating a thin film forming material such as aluminum, comprising a ceramic body and an upper part of the crucible body having an opening like an hourglass To a crucible for a vacuum evaporation source.
In general, a vacuum deposition apparatus is used to form a thin film made of a specific material on a wafer surface in a semiconductor manufacturing process, or to form a thin film of a desired substance on a surface of a glass substrate or the like in the manufacture of a large flat panel display device.
Such a vacuum deposition apparatus is a technique for heating and evaporating a thin film forming material in order to form a predetermined thin film on a substrate disposed in a chamber of high vacuum, and applying a vaporized thin film forming material to the surface of a relatively cold substrate to condense Respectively. Particularly, the material for forming a thin film is heated by using a vacuum evaporation source which is a core component of a vacuum deposition apparatus. The vacuum evaporation source includes a crucible for evaporation containing a substance for forming a thin film and a heater for heating the crucible for evaporation.
However, Al 2 O 3 , PBN, AlN and the like are used as a crucible of an aluminum vacuum evaporation source using aluminum as a thin film forming material in a conventional vacuum evaporation source. However, in the conventional crucible for vacuum evaporation source using such a crucible material, a phenomenon occurs that when aluminum as a thin film forming material evaporates, it flows over the inlet of the crucible, and the crucible materials react well with aluminum as a thin film forming material There is a problem that the aluminum is lost.
Further, when the temperature of the crucible inlet is lowered to prevent the aluminum from overflowing, there is a problem that aluminum is adhered to the upper inlet of the crucible.
SUMMARY OF THE INVENTION The present invention has been made in order to solve all of the above problems, and it is an object of the present invention to provide an aluminum vacuum evaporation source in which a ceramic such as TiB 2 BN is used as a material of a crucible body, And an inlet at an upper portion of the crucible body is opened to minimize heat absorption, thereby dripping down the temperature of the inlet, thereby preventing the aluminum from overflowing.
Another object of the present invention is to provide a crucible for a vacuum evaporation source in which a metal band is attached to an outer circumference of an upper end of a crucible body or a metal is protruded over a coating or an upper surface of an inlet to drip the temperature of an inlet of the crucible body.
Another object of the present invention is to provide a crucible for a vacuum evaporation source in which a heater for heating a crucible body is separated into an upper heater at an upper portion of the crucible body and a lower heater at a lower portion to maintain the upper portion of the crucible body at a proper temperature by the upper heater .
In order to achieve the above object, a crucible for a vacuum evaporation source of the present invention is a crucible for evaporation used in a vacuum evaporation source, wherein the crucible is a material of a crucible body containing a material for forming a thin film, And the crucible body is formed in the shape of an hourglass whose inner diameter becomes narrower toward the middle portion in the upper region.
Further, it is preferable to further include a metal band attached to the outer periphery of the upper end of the crucible body for the purpose of heat reflection, or to coat the metal on the outer circumference of the upper end of the crucible body for heat reflection.
And a protruding portion protruding upward from an upper surface of the crucible body inlet.
In addition, it is preferable that the metal of the metal band attached for the use of the heat reflector or the metal coated for heat reflection is tantalum (Ta) or tungsten (W).
The thin film forming material is preferably aluminum (Al).
The ceramic of the crucible is preferably TiB 2 BN.
Further, it is preferable that the heater further comprises a heater for heating the crucible body, wherein the heater is divided into an upper heater for heating the upper portion of the crucible body and a lower heater for heating the lower portion.
According to the crucible for vacuum evaporation source of the present invention, as the upper part of the crucible body has an open structure such as the upper part of the hourglass, heat absorption is minimized and the temperature of the inlet is lowered so that aluminum as a thin film- It is possible to prevent the phenomenon of overflowing out of the inlet.
Also, the metal band attached to the outer circumference of the upper part of the crucible body or the protruding structure of the coated metal or the upper surface of the inlet has the effect of dropping the temperature of the inlet together with the open structure of the inlet.
Further, the upper heater is heated at an appropriate temperature by heating only the upper part of the crucible body, so that aluminum, which is a thin film forming material, flows down into the crucible body below without being buried in the inlet.
1 is a partial cross-sectional view schematically showing a vacuum evaporation source including a crucible for a vacuum evaporation source according to a first embodiment of the present invention.
2 is a cross-sectional view showing the structure of a crucible for a vacuum evaporation source according to a second embodiment of the present invention.
3 is a cross-sectional view showing the structure of a crucible for a vacuum evaporation source according to a third embodiment of the present invention.
4 is a cross-sectional view showing the structure of a crucible for a vacuum evaporation source according to a fourth embodiment of the present invention.
Hereinafter, preferred embodiments of a crucible for a vacuum evaporation source according to the present invention will be described in detail with reference to the accompanying drawings. It is to be understood that the present invention is not limited to the disclosed embodiments, but may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, It is provided to inform.
1 is a partial cross-sectional view schematically showing a vacuum evaporation source including a crucible for a vacuum evaporation source according to a first embodiment of the present invention.
1, a
The
The
The
When the first and
In addition, the
Hereinafter, the specific structure and function of the crucible for vacuum evaporation source of the present invention included in the above-described
FIG. 1 shows the structure of a crucible for a
Since the
Therefore, the internal structure of the
FIG. 2 is a cross-sectional view illustrating the structure of a crucible for a vacuum evaporation source according to a second embodiment of the present invention.
2, the crucible for vacuum evaporation source according to the second embodiment of the present invention includes an
3 is a cross-sectional view illustrating the structure of a crucible for a vacuum evaporation source according to a third embodiment of the present invention.
3, the crucible for a vacuum evaporation source according to the third embodiment of the present invention includes an
Tantalum (Ta) or tungsten (W) is used as the metal of the metal band (6) or the coated metal (7).
4 is a cross-sectional view illustrating the structure of a crucible for a vacuum evaporation source according to a fourth embodiment of the present invention.
4, the crucible for vacuum evaporation source according to the fourth embodiment of the present invention is constituted by a protruding
On the other hand, the temperature of the
As shown in FIGS. 2 to 4, the temperature gradient of the crucible for the vacuum evaporation source according to the internal structure of the crucible for a
As described above, the crucible for a vacuum evaporation source according to the present invention has been described with reference to the drawings. However, the present invention is not limited to the embodiments and drawings disclosed in the present specification, It should be understood that various modifications may be made by those skilled in the art.
1: crucible of the present invention 2:
3: crucible body lower part 4: crucible body upper part
4a: Crucible inlet 5: Middle part
6: metal band 7: coated metal
8: protrusion 20: heater
20a:
30: cooling unit 40: first case
50: second case 70: support rod
80: Support 90: Power supply
100: vacuum evaporation source
Claims (8)
The crucible for a vacuum evaporation source according to any one of the preceding claims, wherein the crucible body is made of a material such as an hourglass whose inner diameter becomes narrower toward an intermediate portion in an upper region inside the crucible body, .
And a metal band attached to the outer circumference of the upper end of the crucible body for use as a heat reflector.
And a metal is coated on the outer periphery of the upper end of the crucible body for the purpose of heat reflection.
And a protruding portion protruding upward from an upper surface of an inlet of the crucible body.
Wherein the metal of the metal band attached for the use of the heat reflecting plate or the metal coated for heat reflection is tantalum (Ta) or tungsten (W).
Wherein the thin film forming material is aluminum (Al).
Wherein the ceramic of the crucible is TiB 2 BN.
Further comprising a heater for heating the crucible body, wherein the heater is divided into an upper heater for heating the upper portion of the crucible body and a lower heater for heating the lower portion of the crucible body.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020150154606A KR20170052309A (en) | 2015-11-04 | 2015-11-04 | Crucible for evaporation of effusion cell |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020150154606A KR20170052309A (en) | 2015-11-04 | 2015-11-04 | Crucible for evaporation of effusion cell |
Publications (1)
Publication Number | Publication Date |
---|---|
KR20170052309A true KR20170052309A (en) | 2017-05-12 |
Family
ID=58740584
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020150154606A KR20170052309A (en) | 2015-11-04 | 2015-11-04 | Crucible for evaporation of effusion cell |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR20170052309A (en) |
-
2015
- 2015-11-04 KR KR1020150154606A patent/KR20170052309A/en not_active Application Discontinuation
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A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E601 | Decision to refuse application |