KR20170049212A - Apparatus for controlling temperature of substrate, and apparatus for treating substrate comprising the same - Google Patents

Apparatus for controlling temperature of substrate, and apparatus for treating substrate comprising the same Download PDF

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Publication number
KR20170049212A
KR20170049212A KR1020150150305A KR20150150305A KR20170049212A KR 20170049212 A KR20170049212 A KR 20170049212A KR 1020150150305 A KR1020150150305 A KR 1020150150305A KR 20150150305 A KR20150150305 A KR 20150150305A KR 20170049212 A KR20170049212 A KR 20170049212A
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frequency
substrate
band
signal
temperature
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KR1020150150305A
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Korean (ko)
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KR101870652B1 (en
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원정민
최익진
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세메스 주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring

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  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)
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  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

The present invention relates to an apparatus for controlling the temperature of a substrate, and a substrate treating apparatus comprising the same. The apparatus for controlling the temperature of a substrate according to an embodiment of the present invention includes a support plate for supporting a substrate; a plurality of heating units installed in different regions of the support plate and adjusting the temperature of the substrate for each region; a control part for outputting a first signal for controlling the temperature of the substrate; and a plurality of band-pass filters which passes a plurality of second signals of different frequency bands from the first signal and outputs the second signals to the plurality of heating units.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a substrate temperature control apparatus and a substrate processing apparatus including the substrate temperature control apparatus.

The present invention relates to a substrate temperature control apparatus and a substrate processing apparatus including the substrate temperature control apparatus.

There is a need for a substrate temperature control device for controlling the temperature of the substrate during the semiconductor manufacturing process. The conventional substrate temperature control device controls each of the heating units by a plurality of control units corresponding to a plurality of heating units that adjust the temperature for each region of the substrate.

However, in the case of a substrate having a multi-zone of recent attention, if more than 100 heating units are required and a corresponding control unit is provided, at least 30 times larger equipment than the existing equipment is required. Increasing the volume of such equipment can be a result of contradicting recent trends in reducing the volume of equipment.

Therefore, there is a need for a technique capable of controlling the temperature of a substrate having a multi-zone without increasing the volume of the equipment.

It is an object of the present invention to provide an apparatus and method for controlling a substrate temperature that can control the temperature of a substrate by region without increasing the volume of equipment for controlling the temperature of the substrate.

The problems to be solved by the present invention are not limited to the above-mentioned problems. Other technical subjects not mentioned will be apparent to those skilled in the art from the description below.

A substrate temperature control apparatus according to an embodiment of the present invention includes: a support plate for supporting a substrate; A plurality of heating units installed in different regions of the support plate to adjust the temperature of the substrate by region; A controller for outputting a first signal for controlling a temperature of the substrate; And a plurality of band pass filters that pass a plurality of second signals of different frequency bands from the first signal and output the second signals to the plurality of heating units.

In one embodiment, the plurality of heating units can regulate the temperature of the substrate according to the plurality of second signals.

In one embodiment, the apparatus further includes a sensor unit for measuring temperature distribution information of the substrate, and the controller may adjust the frequency of the first signal according to the temperature distribution information.

In one embodiment, the controller may adjust at least one of the frequency variation pattern and the power of the first signal according to the temperature distribution information.

In one embodiment, the control unit may include: a determination unit that determines a first heating unit among the plurality of heating units based on the temperature distribution information; And a frequency of the first signal to a frequency belonging to a frequency band of a band pass filter corresponding to the first heating unit.

In one embodiment, the plurality of band pass filters may include: a first bandpass filter that passes a predetermined first frequency band from the first signal; And a second band-pass filter for passing a predetermined second frequency band from the first signal, wherein the controller adjusts the first signal to have a frequency of a first frequency band or a frequency of a second frequency band, And can be applied to a plurality of band-pass filters.

A substrate processing apparatus according to an embodiment of the present invention includes: a chamber having a processing space therein; A gas supply unit for supplying gas to the chamber; And a plasma power source for applying an RF power for generating a plasma from the gas supplied to the chamber; A support plate positioned within the chamber and supporting the substrate; A plurality of heating units installed in different regions of the support plate to adjust the temperature of the substrate by region; A controller for outputting a first signal for controlling a temperature of the substrate; And a plurality of band pass filters that pass a plurality of second signals of different frequency bands from the first signal and output the second signals to the plurality of heating units.

In one embodiment, the plurality of heating units can regulate the temperature of the substrate in each region according to the plurality of second signals.

In one embodiment, the apparatus further includes a sensor unit for measuring temperature distribution information of the substrate, and the controller may adjust the frequency of the first signal according to the temperature distribution information.

In one embodiment, the controller may adjust at least one of the frequency variation pattern and the power of the first signal according to the temperature distribution information.

In one embodiment, the control unit may include: a determination unit that determines a first heating unit among the plurality of heating units based on the temperature distribution information; And a frequency of the first signal to a frequency belonging to a frequency band of a band pass filter corresponding to the first heating unit.

In one embodiment, the plurality of band pass filters may include: a first bandpass filter that passes a predetermined first frequency band from the first signal; And a second band-pass filter for passing a predetermined second frequency band from the first signal, wherein the controller adjusts the first signal to have a frequency of a first frequency band or a frequency of a second frequency band, And can be applied to a plurality of band-pass filters.

A method of controlling a substrate temperature according to an embodiment of the present invention includes: calculating a temperature control value for a plurality of heating units for controlling a temperature of the substrate by a region by comparing a temperature distribution of the substrate with a target temperature distribution; And calculating a frequency of a first signal to be applied to a plurality of band pass filters outputting signals of different frequency bands to the plurality of heating units according to the temperature control value for the plurality of heating units .

In one embodiment, the plurality of band pass filters may pass a plurality of second signals of different frequency bands in the first signal.

In one embodiment, the method may further include adjusting at least one of the frequency-dependent application time and the frequency-dependent power of the first signal according to the temperature distribution of the substrate.

In one embodiment, the method further comprises determining a first heating unit of the plurality of heating units based on a temperature distribution of the substrate, wherein calculating the frequency of the first signal comprises: And calculating a frequency at a frequency belonging to a pass band of the band pass filter corresponding to the first heating unit.

A substrate temperature control method according to an embodiment of the present invention can be recorded in a computer-readable recording medium on which a program for executing a substrate temperature control method is recorded.

According to an embodiment of the present invention, the temperature of the substrate can be controlled region by region without increasing the volume of the apparatus for temperature control of the substrate.

The effects of the present invention are not limited to the effects described above. Unless stated, the effects will be apparent to those skilled in the art from the description and the accompanying drawings.

1 is a cross-sectional view showing a substrate processing apparatus according to an embodiment of the present invention.
2 is an exemplary schematic diagram illustrating a temperature control apparatus according to an embodiment of the present invention.
3 is an exemplary block diagram illustrating the operation of the controller according to an embodiment of the present invention.
4 is a view for explaining a temperature control method of a substrate W having a plurality of regions according to an embodiment of the present invention.
5 is an exemplary diagram illustrating a plurality of regions of a substrate in accordance with another embodiment of the present invention.
6 is an exemplary diagram illustrating a first signal output from a control unit according to an embodiment of the present invention.
7 is an exemplary diagram showing a first signal output from a control unit according to another embodiment of the present invention.
8 is a flowchart illustrating a substrate temperature control method according to an embodiment of the present invention.

Other advantages and features of the present invention and methods of achieving them will become apparent with reference to the embodiments described below in detail with reference to the accompanying drawings. The present invention may, however, be embodied in many different forms and should not be construed as being limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of the invention to those skilled in the art. Is provided to fully convey the scope of the invention to those skilled in the art, and the invention is only defined by the scope of the claims.

Although not defined, all terms (including technical or scientific terms) used herein have the same meaning as commonly accepted by the generic art in the prior art to which this invention belongs. Terms defined by generic dictionaries may be interpreted to have the same meaning as in the related art and / or in the text of this application, and may be conceptualized or overly formalized, even if not expressly defined herein I will not. The terminology used herein is for the purpose of illustrating embodiments and is not intended to be limiting of the present invention.

In the present specification, the singular form includes plural forms unless otherwise specified in the specification. As used herein, the terms' comprise 'and / or various forms of use of the verb include, for example,' including, '' including, '' including, '' including, Steps, operations, and / or elements do not preclude the presence or addition of one or more other compositions, components, components, steps, operations, and / or components. Also, 'equipped' and 'possessed' should be interpreted in the same way.

The present invention relates to a substrate temperature control apparatus and a substrate processing apparatus including the substrate temperature control apparatus, and an apparatus and a method for controlling the temperature of a substrate by regions without increasing the volume of the apparatus. The apparatus for controlling a substrate temperature according to an embodiment of the present invention includes a plurality of heating units installed in different regions of a support plate for supporting a substrate and controlling the temperature of the substrate by regions, And a plurality of band pass filters for passing a plurality of second signals of different frequency bands from the first signal and outputting the second signals to the plurality of heating units. That is, in the substrate temperature control apparatus according to an embodiment of the present invention, a plurality of band pass filters that pass signals of different frequency bands are connected to each of the plurality of heating units, By controlling the plurality of heating units, it is possible to control the temperature of the substrate having multi-zones without increasing the volume of the apparatus.

1 is a cross-sectional view showing a substrate processing apparatus according to an embodiment of the present invention.

Referring to Fig. 1, a substrate processing apparatus 10 processes a substrate W using a plasma. For example, the substrate processing apparatus 10 may perform an etching process on the substrate W. [ The substrate processing apparatus 10 may include a chamber 100, a substrate support assembly 200, a showerhead 300, and a gas supply unit 400.

The chamber 100 may provide a processing space in which a substrate processing process is performed. The chamber 100 has a processing space therein and can be provided in a closed configuration. The chamber 100 may be made of a metal material. According to one embodiment, the chamber 100 may be provided with an aluminum material. The chamber 100 may be grounded. An exhaust hole 102 may be formed in the bottom surface of the chamber 100. The exhaust hole 102 may be connected to the exhaust line 151. The reaction byproducts generated in the process and the gas staying in the inner space of the chamber can be discharged to the outside through the exhaust line 151. The interior of the chamber 100 may be depressurized to a predetermined pressure by an evacuation process.

According to one example, a liner 130 may be provided within the chamber 100. The liner 130 may have a cylindrical shape with open top and bottom surfaces. The liner 130 may be provided to contact the inner surface of the chamber 100. The liner 130 protects the inner wall of the chamber 100 to prevent the inner wall of the chamber 100 from being damaged by the arc discharge. It is also possible to prevent impurities generated during the substrate processing step from being deposited on the inner wall of the chamber 100. Optionally, the liner 130 may not be provided.

The substrate support plate 200 may be positioned inside the chamber 100. The support plate 200 can support the substrate W. The substrate support plate 200 may include an electrostatic chuck 210 for attracting the substrate W using an electrostatic force. Alternatively, the substrate support plate 200 may support the substrate W in a variety of ways, such as mechanical clamping. Hereinafter, the substrate supporting plate 200 including the electrostatic chuck 210 will be described.

The substrate support assembly 200 may include an electrostatic chuck 210, a bottom cover 250 and a plate 270. The substrate support assembly 200 is spaced upwardly from the bottom surface of the chamber 100 within the chamber 100.

The electrostatic chuck 210 may include a dielectric plate 220, a body 230, and a focus ring 240. The electrostatic chuck 210 can support the substrate W. [

The dielectric plate 220 may be positioned at the top of the electrostatic chuck 210. The dielectric plate 220 may be provided as a disk-shaped dielectric substance. The substrate W may be placed on the upper surface of the dielectric plate 220. The upper surface of the dielectric plate 220 may have a smaller radius than the substrate W. [ The edge region of the substrate W may be located outside the dielectric plate 220.

The dielectric plate 220 may include a first electrode 223, a heater 225, and a first supply path 221 therein. The first supply passage 221 may be provided from the upper surface to the lower surface of the dielectric plate 210. A plurality of the first supply passages 221 may be spaced apart from each other and may be provided as a passage through which the heat transfer medium is supplied to the bottom surface of the substrate W.

The first electrode 223 may be electrically connected to the first power source 223a. The first power source 223a may include a DC power source. A switch 223b may be provided between the first electrode 223 and the first power source 223a. The first electrode 223 may be electrically connected to the first power source 223a by turning on / off the switch 223b. When the switch 223b is turned on, a direct current can be applied to the first electrode 223. An electrostatic force acts between the first electrode 223 and the substrate W by the current applied to the first electrode 223 and the substrate W can be attracted to the dielectric plate 220 by the electrostatic force.

The heating unit 225 may be positioned below the first electrode 223. The heating unit 225 may be electrically connected to the second power source 225a. The heating unit 225 can generate heat by resisting the current applied from the power source. The generated heat can be transferred to the substrate W through the dielectric plate 220. The substrate W can be maintained at a predetermined temperature by the heat generated in the heating unit 225. The heating unit 225 may include a helical coil.

The body 230 may be positioned below the dielectric plate 220. The bottom surface of the dielectric plate 220 and the top surface of the body 230 may be bonded together by a bonding unit 236. The body 230 may be made of aluminum. The upper surface of the body 230 may be stepped so that the central region is located higher than the edge region. The top center region of the body 230 may have an area corresponding to the bottom surface of the dielectric plate 220 and be adhered to the bottom surface of the dielectric plate 220. The body 230 may have a first circulation channel 231, a second circulation channel 232, and a second supply channel 233 formed therein.

The first circulation channel 231 may be provided as a passage through which the heat transfer medium circulates. The first circulation flow path 231 may be formed in a spiral shape inside the body 230. Alternatively, the first circulation flow path 231 may be arranged so that the ring-shaped flow paths having different radii have the same center. Each of the first circulation flow paths 231 can communicate with each other. The first circulation flow paths 231 may be formed at the same height.

The second circulation flow passage 232 may be provided as a passage through which the cooling fluid circulates. The second circulation flow path 232 may be formed in a spiral shape inside the body 230. Alternatively, the second circulation flow path 232 may be arranged so that the ring-shaped flow paths having different radii have the same center. Each of the second circulation flow paths 232 can communicate with each other. The second circulation channel 232 may have a larger cross-sectional area than the first circulation channel 231. The second circulation flow paths 232 may be formed at the same height. The second circulation flow passage 232 may be positioned below the first circulation flow passage 231.

The second supply passage 233 may extend upward from the first circulation passage 231 and may be provided on the upper surface of the body 230. The second supply passage 243 may be provided in a number corresponding to the first supply passage 221 and may be connected to the first circulation passage 231 and the first supply passage 221.

The first circulation channel 231 may be connected to the heat transfer medium storage unit 231a through the heat transfer medium supply line 231b. The heat transfer medium storage unit 231a may store the heat transfer medium. The heat transfer medium may include an inert gas. According to an embodiment, the heat transfer medium may comprise helium (He) gas. Helium gas can be supplied to the first circulation channel 231 through the supply line 231b and supplied to the bottom surface of the substrate W through the second supply channel 233 and the first supply channel 221 in order . The helium gas serves as a medium for transferring the heat transferred from the plasma to the substrate W to the electrostatic chuck 210.

The second circulation channel 232 may be connected to the cooling fluid storage 232a through the cooling fluid supply line 232c. The cooling fluid may be stored in the cooling fluid storage portion 232a. A cooler 232b may be provided in the cooling fluid storage portion 232a. The cooler 232b may cool the cooling fluid to a predetermined temperature. Alternatively, the cooler 232b may be installed on the cooling fluid supply line 232c. The cooling fluid supplied to the second circulation channel 232 through the cooling fluid supply line 232c circulates along the second circulation channel 232 and can cool the body 230. [ The body 230 is cooled and the dielectric plate 220 and the substrate W are cooled together to maintain the substrate W at a predetermined temperature.

The body 230 may include a metal plate. According to one example, the entire body 230 may be provided as a metal plate. The body 230 may be electrically connected to the third power source 235a. The first power source 235a may be provided as a high frequency power source for generating high frequency power. The high frequency power source can be provided by an RF power source. The body 230 can receive high frequency power from the first power source 235a. This allows the body 230 to function as an electrode.

The showerhead unit 300 includes a shower head 310, a gas injection plate 320, and a support portion 330. The showerhead 310 is spaced apart from the upper surface of the chamber 100 by a predetermined distance. A predetermined space is formed between the gas injection plate 310 and the upper surface of the chamber 100. The showerhead 310 may be provided in a plate shape having a constant thickness. The bottom surface of the showerhead 310 may be polarized on its surface to prevent arcing by plasma. The end face of the shower head 310 may be provided to have the same shape and cross-sectional area as the support plate 200. The shower head 310 includes a plurality of injection holes 311. The spray hole 311 penetrates the upper surface and the lower surface of the shower head 310 in the vertical direction. The shower head 310 includes a metal material.

The showerhead 310 may be electrically connected to the fourth power source 351. The fourth power source 351 may be provided as a high frequency power source. Alternatively, the showerhead 310 may be electrically grounded. The showerhead 310 may be electrically connected to the second power source 351 or may be grounded to function as an electrode.

A gas supply unit (400) supplies a process gas into the chamber (100). The gas supply unit 400 includes a gas feeder 410, a gas supply pipe 420, and a gas storage unit 430. The gas feeder 410 is installed at the center of the upper surface of the chamber 100. A process gas is supplied from the gas feeder 410 into the chamber 100.

2 is an exemplary schematic diagram illustrating a temperature control apparatus according to an embodiment of the present invention.

2, the temperature control device 700 according to an embodiment of the present invention includes a support plate 200 for supporting a substrate W, A control unit 730 for outputting a first signal for adjusting the temperature of the substrate, a plurality of second signals having different frequency bands from the first signal, And a sensor unit (not shown) for measuring temperature distribution information of the substrate.

The heating unit 225 may adjust the temperature of the substrate according to the plurality of second signals. That is, the temperature of the substrate can be adjusted according to the second signal that has passed through at least one of the plurality of band-pass filters from the first signal output from the controller 710.

In one embodiment, the heating unit 225 may include a heating line 225b and a heating plate 225a, which are heated to a band-pass filter 710. [ 2, the heating units 225 may be spaced apart from each other in the supporting plate 200, but may be installed as a heating plate 225a as one unit, The case of including a plurality of heating lines 225b may also be included.

The heating unit 225 may heat or cool the substrate to regulate the temperature of the substrate.

The plurality of bandpass filters 710 may be band pass filters that pass different frequency bands. In one embodiment, the plurality of bandpass filters 710 may each be a bandpass filter that passes a different frequency band.

As shown in FIG. 2, the controller 730 may be a controller for controlling signals applied to a plurality of band pass filters.

In one embodiment, the controller 730 may adjust the frequency of the first signal applied to the band-pass filter according to the temperature distribution information of the substrate measured by the sensor unit. In addition, the frequency variation pattern and power of the first signal may be adjusted and output according to the temperature distribution information.

3 is an exemplary block diagram illustrating the operation of the controller according to an embodiment of the present invention.

3, the control unit 730 may include a determination unit 731, a control module 733, and a signal generation unit 735, and may include a sensor unit 720, The signal can be controlled based on the temperature distribution information measured from the temperature distribution information.

The sensor unit 720 may be a thermal sensor that is disposed on the support plate and measures the temperature of the substrate. However, the sensor unit 720 is not limited thereto.

The determination unit 731 can determine the first heating unit among the plurality of heating units based on the temperature distribution information measured by the sensor unit 720. [ In one embodiment, when there is an error between a temperature of the substrate and a predetermined target temperature value on the basis of the temperature distribution information, the heating unit for adjusting the temperature of the error region may be determined as the first heating unit. For example, the determination unit 731 can determine the plurality of heating units.

The control module 733 controls the frequency of the signal applied to the band-pass filter based on the temperature distribution information measured by the sensor unit 720 or the information about the first heating unit determined by the determination unit 731 Can be adjusted. In one embodiment, the control module 733 can adjust the frequency of the signal so that the control module 733 belongs to the frequency band passed by the band-pass filter corresponding to the heating unit that regulates the region requiring temperature regulation based on the temperature distribution information . In one embodiment, when the information about the first heating unit is received from the determining unit 731, the frequency of the signal can be adjusted to a frequency belonging to the frequency band of the band-pass filter corresponding to the first heating unit. For example, in the case where the first heating unit is a heating unit provided in a region where the error is the largest with respect to the target temperature value in the temperature distribution information, and the frequency band is 10 to 30 MHz through which the band-pass filter corresponding to the heating unit passes, The frequency of the first signal can be adjusted to 20 MHz. The control module 733 can adjust not only the frequency of the signal but also the application time or power of the signal. This will be described below with reference to Figs. 6 and 7.

The signal generator 735 may generate a first signal controlled by the control module 733 and output it to a plurality of bandpass filters 735.

That is, the plurality of band pass filters 710 may include a first band pass filter for passing a predetermined first frequency band from the first signal, and a second band pass filter for passing a predetermined second frequency band from the first signal. And the controller 730 may apply the first signal to the plurality of bandpass filters 710 by adjusting the frequency of the first frequency band or the frequency of the second frequency band.

4 is a view for explaining a temperature control method of a substrate W having a plurality of regions according to an embodiment of the present invention.

As shown in FIG. 4, the substrate may include a plurality of regions divided into a grid pattern. In this case, the heating unit may be disposed on each of the support plates for supporting the substrate. In one embodiment, the substrate may include a first region A1, a second region A2, and a third region A3. For example, the first region A1> the second region A2> the third region A3, and the third region A3 (the second region A2) ), The control unit controls the first region heating unit for adjusting the temperatures of the first region (A1) and the second region (A2), and the frequency band passing through the band-pass filter connected to the second region heating unit And outputs the first area signal and the second area signal. In addition, the application time of the signal of the first area A1 having a larger error can be adjusted to be long.

5 is an exemplary diagram illustrating a plurality of regions of a substrate in accordance with another embodiment of the present invention. The plurality of regions of the substrate of the present invention may include a plurality of regions B1, B2, and B3 that are divided in the circumferential direction, as shown in Fig. When a plurality of regions divided in the circumferential direction are adjusted as described above, the area of each region increases as the distance from the center increases (B1 <B3 <B2). Can be adjusted so that the signal having the output signal is outputted. A plurality of other temperature control methods for each region are the same as those described above in Fig.

6 is an exemplary diagram illustrating a first signal output from a control unit according to an embodiment of the present invention.

As shown in FIG. 6, the first signal output from the control unit may be adjusted and output at a frequency having a different frequency f1 or f2, and the application time T1 or T2 of the signal may be adjusted and output have. 4, the first signal may be applied for a time T1 for a time period f1 belonging to the pass band of the band-pass filter connected to the second zone heating unit, May be applied for a time T2 for a frequency f2 belonging to the pass band of the band-pass filter connected to the unit.

7 is an exemplary diagram showing a first signal output from a control unit according to another embodiment of the present invention.

As shown in FIG. 7, the first signal output from the control unit may be applied with a signal having a different power for each of different application times (T1, T2, and T3). In one embodiment, a heating unit to which a band-pass filter is connected to pass a second frequency f2 is slightly lower than the average temperature of the region controlled by the heating unit to which the band-pass filter passing the first frequency f1 is connected The temperature of the region to be adjusted is somewhat higher than the average and the region is controlled by the average temperature when the temperature of the region controlled by the heating unit to which the bandpass filter passing the third frequency f3 is connected is much lower than the average. A first signal having a different power (P2 < P1 < P3) as shown in Fig. 7 can be output.

A method for controlling a substrate temperature according to an embodiment of the present invention includes the steps of: calculating a temperature control value for a plurality of heating units for controlling a temperature of the substrate by a region by comparing a temperature distribution of the substrate with a target temperature distribution; And calculating a frequency of a first signal to be applied to a plurality of band-pass filters that output signals of different frequency bands to the plurality of heating units in accordance with the temperature adjustment value for the plurality of heating units .

In one embodiment, the plurality of band pass filters may pass a plurality of second signals of different frequency bands in the first signal.

In one embodiment, the method may further include adjusting at least one of the frequency-dependent application time and the frequency-dependent power of the first signal according to the temperature distribution of the substrate.

In one embodiment, the method further comprises determining a first heating unit of the plurality of heating units based on a temperature distribution of the substrate, wherein the step of calculating the frequency of the first signal comprises: And calculating a frequency belonging to a pass band of the band pass filter corresponding to the first heating unit.

In another embodiment, the substrate temperature control method includes reading temperature distribution information of a substrate including a plurality of regions, reading a plurality of band passages corresponding to a plurality of heating units provided on the substrate in accordance with the temperature distribution information, And adjusting the frequency of the signal applied to the filter.

In one embodiment, the plurality of bandpass filters may pass different frequency bands.

In one embodiment, the method may further include adjusting at least one of a frequency variation pattern and a power of a signal applied to the plurality of band pass filters according to the temperature distribution information.

8 is a flowchart illustrating a substrate temperature control method according to an embodiment of the present invention.

As shown in FIG. 8, the substrate temperature control method according to an embodiment of the present invention includes a step S610 of reading temperature distribution information of a substrate including a plurality of regions (S610) (S620) of the first heating unit of the first heating unit and adjusting (S630) the frequency belonging to the frequency band of the band-pass filter corresponding to the first heating unit.

The substrate temperature control method may be implemented by a computer-executable program, an application program, or a computer-readable recording medium.

The computer readable recording medium may be a volatile memory such as a static RAM (SRAM), a dynamic RAM (DRAM), or a synchronous DRAM (SDRAM), a read only memory (ROM), a programmable ROM (PROM), an electrically programmable ROM (EPROM) A floppy disk, a hard disk, or the like, such as an electrically erasable and programmable ROM (EEPROM), a flash memory device, a phase-change RAM (PRAM), a magnetic RAM (MRAM), a resistive RAM (RRAM) But are not limited to, optical storage media such as CD ROMs, DVDs, and the like.

It is to be understood that the above-described embodiments are provided to facilitate understanding of the present invention, and do not limit the scope of the present invention, and it is to be understood that various modifications are possible within the scope of the present invention. It is to be understood that the technical scope of the present invention should be determined by the technical idea of the claims and the technical scope of protection of the present invention is not limited to the literary description of the claims, To the invention of the invention.

10: substrate processing apparatus
100: chamber
200: Support plate
400: gas supply unit
225: Heating unit
700: substrate temperature control device
710: Bandpass filter
730:

Claims (17)

A support plate for supporting the substrate;
A plurality of heating units installed in different regions of the support plate to adjust the temperature of the substrate by region;
A controller for outputting a first signal for controlling a temperature of the substrate; And
And a plurality of band-pass filters that pass a plurality of second signals of different frequency bands from the first signal and output the second signals to the plurality of heating units. The method according to claim 1,
Wherein the plurality of heating units regulate the temperature of the substrate in each region according to the plurality of second signals. The method according to claim 1,
Further comprising a sensor unit for measuring temperature distribution information of the substrate,
And the controller adjusts the frequency of the first signal according to the temperature distribution information. The method of claim 3,
Wherein the controller adjusts at least one of a frequency variation pattern and a power of the first signal according to the temperature distribution information. The method of claim 3,
Wherein,
A determination unit that determines a first heating unit among the plurality of heating units based on the temperature distribution information; And
And adjusts the frequency of the first signal to a frequency belonging to a frequency band of a band-pass filter corresponding to the first heating unit. The method of claim 3,
Wherein the plurality of band-
A first band-pass filter for passing a predetermined first frequency band from the first signal; And
And a second band-pass filter for passing a predetermined second frequency band from the first signal,
Wherein the controller adjusts the first signal to have a frequency of a first frequency band or a frequency of a second frequency band, and applies the adjusted first signal to the plurality of band-pass filters. A chamber having a processing space therein;
A gas supply unit for supplying gas to the chamber; And
A plasma power source for applying RF power for generating a plasma from a gas supplied to the chamber;
A support plate positioned within the chamber and supporting the substrate;
A plurality of heating units installed in different regions of the support plate to adjust the temperature of the substrate by region;
A controller for outputting a first signal for controlling a temperature of the substrate; And
And a plurality of band-pass filters that pass a plurality of second signals of different frequency bands from the first signal and output the second signals to the plurality of heating units. 8. The method of claim 7,
Wherein the plurality of heating units adjust the temperature of the substrate in each region according to the plurality of second signals. 8. The method of claim 7,
Further comprising a sensor unit for measuring temperature distribution information of the substrate,
Wherein the control unit adjusts the frequency of the first signal according to the temperature distribution information. 10. The method of claim 9,
Wherein the controller adjusts at least one of the frequency variation pattern and the power of the first signal according to the temperature distribution information. 10. The method of claim 9,
Wherein,
A determination unit that determines a first heating unit among the plurality of heating units based on the temperature distribution information; And
And adjusts the frequency of the first signal to a frequency belonging to a frequency band of a band-pass filter corresponding to the first heating unit. 10. The method of claim 9,
Wherein the plurality of band-
A first band-pass filter for passing a predetermined first frequency band from the first signal; And
And a second band-pass filter for passing a predetermined second frequency band from the first signal,
Wherein the controller adjusts the first signal to have a frequency of a first frequency band or a frequency of a second frequency band, and applies the adjusted signal to the plurality of band-pass filters. Comparing the temperature distribution of the substrate with the target temperature distribution to calculate a temperature adjustment value for a plurality of heating units for adjusting the temperature of the substrate by region; And
Calculating a frequency of a first signal to be applied to a plurality of band-pass filters for outputting signals of different frequency bands to the plurality of heating units according to a temperature control value for the plurality of heating units; Temperature control method. 14. The method of claim 13,
Wherein the plurality of band-pass filters pass a plurality of second signals of different frequency bands in the first signal. 14. The method of claim 13,
And adjusting at least one of the frequency-dependent application time and the frequency-dependent power of the first signal according to the temperature distribution of the substrate. 14. The method of claim 13,
Further comprising determining a first one of the plurality of heating units based on a temperature distribution of the substrate,
Wherein the step of calculating the frequency of the first signal comprises:
And calculating the frequency of the first signal at a frequency belonging to a pass band of a band-pass filter corresponding to the first heating unit. A computer-readable recording medium having recorded thereon a program for executing the method of controlling a substrate temperature according to any one of claims 13 to 16.
KR1020150150305A 2015-10-28 2015-10-28 Apparatus for controlling temperature of substrate, and apparatus for treating substrate comprising the same KR101870652B1 (en)

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KR20220166601A (en) * 2021-06-10 2022-12-19 경희대학교 산학협력단 Apparatus and method for controlling temperature uniformity of substrate

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KR20050047989A (en) * 2003-11-18 2005-05-24 이삼현 Method for individual control of multiple circuit-units using single cable
KR20080020720A (en) * 2006-08-24 2008-03-06 세메스 주식회사 Apparatus and method for treating substrate
JP2010183037A (en) * 2009-02-09 2010-08-19 Toshiba Corp Semiconductor manufacturing apparatus

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Publication number Priority date Publication date Assignee Title
KR20050047989A (en) * 2003-11-18 2005-05-24 이삼현 Method for individual control of multiple circuit-units using single cable
KR20080020720A (en) * 2006-08-24 2008-03-06 세메스 주식회사 Apparatus and method for treating substrate
JP2010183037A (en) * 2009-02-09 2010-08-19 Toshiba Corp Semiconductor manufacturing apparatus

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* Cited by examiner, † Cited by third party
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KR20220166601A (en) * 2021-06-10 2022-12-19 경희대학교 산학협력단 Apparatus and method for controlling temperature uniformity of substrate

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