KR20170039798A - Bake unit and Method for treating substrate - Google Patents

Bake unit and Method for treating substrate Download PDF

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Publication number
KR20170039798A
KR20170039798A KR1020150138569A KR20150138569A KR20170039798A KR 20170039798 A KR20170039798 A KR 20170039798A KR 1020150138569 A KR1020150138569 A KR 1020150138569A KR 20150138569 A KR20150138569 A KR 20150138569A KR 20170039798 A KR20170039798 A KR 20170039798A
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South Korea
Prior art keywords
substrate
heating
buffer
heating plate
module
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KR1020150138569A
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Korean (ko)
Inventor
정영헌
조수현
이기승
이현희
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세메스 주식회사
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Priority to KR1020150138569A priority Critical patent/KR20170039798A/en
Publication of KR20170039798A publication Critical patent/KR20170039798A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67712—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations the substrate being handled substantially vertically
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67742—Mechanical parts of transfer devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Robotics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

Embodiments of the present invention provide an apparatus and method for heat treating a substrate. The substrate processing apparatus includes a support plate having a seating surface on which an upper surface of the substrate is seated and an upper heating member for heating the substrate that is seated on the seating surface above the seating surface, And a moving member for moving the heating plate, wherein the heating plate has a smaller area than the seating surface. As a result, the temperature of each region of the substrate can be uniformly controlled.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a bake unit,

The present invention relates to an apparatus and a method for heat-treating a substrate.

Various processes such as cleaning, deposition, photolithography, etching, and ion implantation are performed to manufacture semiconductor devices. Among these processes, the photolithography process is largely performed by a coating process, an exposure process, and a developing process. The coating step is a step of applying a photosensitive liquid such as a resist to the surface of the substrate. The exposure process is a process for exposing a circuit pattern on a substrate having a photosensitive film formed thereon. The developing step is a step of selectively developing the exposed region of the substrate. Among them, the coating step includes a baking step of baking the photoresist film applied on the substrate.

BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a cross-sectional view of a device that generally performs a bake process. Referring to Fig. 1, the bake unit includes a housing 2, a support plate 4, a heater 6, and a cooling plate (not shown). The housing 2 includes an upper body 2a and a lower body 2b, and the bodies 2 are combined with each other to form a processing space therein. The support plate 4 supports the substrate in the processing space. The heater 6 is placed in the support plate 4, and heat-treats the substrate supported by the support plate 4. A downward flow is formed in the processing space, and the volatile material generated in the processing space is exhausted to the outside of the housing 2 together with the downward flow. When the heat treatment process of the substrate is completed, the upper body 2a or the lower body 2b is moved to open the processing space, and the substrate is moved to a cooling plate (not shown) to perform a cooling process.

During the heating process of the substrate, the downward flow is exhausted through the exhaust hole formed in the bottom surface of the lower body. The exhaust holes are arranged so as to surround the support plate 4. As a result, the downward flow is concentrated in the side region of the support plate 4, which lowers the edge region temperature of the substrate. As a result, the edge region of the substrate has a lower temperature than the center, and the thickness of the photosensitive film is different. As shown in Fig. 2, the edge region of the photosensitive liquid film has a larger thickness than the center.

Korean Patent Application No. 2008-0020037

An object of the present invention is to provide an apparatus and a method for uniformly controlling the thickness of a liquid film in a bake process of a liquid film.

It is another object of the present invention to provide an apparatus and a method that can prevent a portion of a liquid film from being uneven in temperature compared to other regions due to an airflow.

It is another object of the present invention to provide an apparatus and a method for preventing a part of a liquid film from being uneven in thickness compared to other regions due to a temperature difference in each region of a substrate.

Embodiments of the present invention provide an apparatus and method for heat treating a substrate. The substrate processing apparatus includes a support plate having a seating surface on which an upper surface of the substrate is seated and an upper heating member for heating the substrate that is seated on the seating surface above the seating surface, And a moving member for moving the heating plate, wherein the heating plate has a smaller area than the seating surface.

The bake unit further includes a lower heating member provided on the support plate for heating the seating surface, the moving member supporting the arm supporting the heating plate and the arm, And an elevation shaft that can be elevated and lowered. The bake unit further includes a chamber having a processing space in which the support plate is disposed and an exhaust line connected to an exhaust hole formed in a bottom surface of the chamber and exhausting the atmosphere of the processing space, And the exhaust hole may be arranged to surround the support plate when viewed from above. Wherein the bake unit further comprises a controller for controlling the moving member, wherein the controller controls the heating plate to heat a center region of the substrate and an edge region excluding the center, respectively, wherein a first distance between the center and the heating plate, The moving member may be controlled such that the second distance between the edge region and the heating plate is different from each other. The second distance may be longer than the first distance. The bake unit further includes a controller for controlling the movable member, wherein the controller can control the movable member such that the heating plate selectively heats a portion of the substrate. The portion of the region may include an edge region that is spaced from the central region of the substrate.

A method of baking a substrate is characterized in that a heater located below the substrate heats the entire area of the substrate and a heating plate with a smaller area than the substrate heats a portion of the substrate above the substrate.

The heating of a portion of the substrate may be performed by adjusting a height of the heating plate according to an area of the substrate, wherein the heating plate is moved to a first height toward a center of the substrate, And may be moved to a second height lower than the first height. Also, heating a portion of the substrate may be moved so that the heating plate heats the edge region of the substrate.

According to an embodiment of the present invention, the heating plate compensates for the temperature of a portion of the substrate that is lower in temperature than other regions above the substrate. As a result, the temperature of each region of the substrate can be uniformly controlled.

According to the embodiment of the present invention, since the heating plate heats a part of the region so that the temperature of each region of the substrate is uniform, the thickness of the region of the photosensitive film can be uniformly adjusted.

1 is a sectional view showing a general bake unit.
Fig. 2 is a cross-sectional view showing the liquid film thickness of the substrate baked by the baking unit of Fig. 1; Fig.
3 is a top view of the substrate processing apparatus.
Fig. 4 is a view of the facility of Fig. 3 viewed from the direction AA. Fig.
5 is a view of the equipment of Fig. 3 viewed from the BB direction.
FIG. 6 is a view of the equipment of FIG. 3 viewed from the CC direction.
7 is a cross-sectional view showing the bake unit of Fig.
8 is a plan view showing the bake unit of Fig. 7;
9 is a plan view showing the heating plate and substrate of FIG.
FIG. 10 is a plan view showing a moving path of the heating plate of FIG. 9; FIG.
11 is a cross-sectional view showing the height of the heating plate substrate in FIG.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The embodiments of the present invention may be modified in various forms, and the scope of the present invention should not be construed as being limited to the following embodiments. This embodiment is provided to more fully describe the present invention to those skilled in the art. Thus, the shape of the elements in the figures has been exaggerated to emphasize a clearer description.

The facilities of this embodiment can be used to perform a photolithography process on a substrate such as a semiconductor wafer or a flat panel display panel. In particular, the apparatus of this embodiment can be used to perform a coating process and a developing process on a substrate, which is connected to an exposure apparatus. Hereinafter, a case where a wafer is used as a substrate will be described as an example.

3 to 11 are schematic views of a substrate processing apparatus according to an embodiment of the present invention. 3 is a view of the apparatus of FIG. 3 viewed from the direction AA, FIG. 5 is a view of the apparatus of FIG. 3 viewed from the BB direction, FIG. 6 is a view of the apparatus of FIG. 3 In the CC direction.

3 to 6, the substrate processing apparatus 1 includes a load port 100, an index module 200, a first buffer module 300, a coating and developing module 400, a second buffer module 500 An exposure pre- and post-processing module 600, and an interface module 700. The load port 100, the index module 200, the first buffer module 300, the application and development module 400, the second buffer module 500, the pre-exposure processing module 600, and the interface module 700, Are sequentially arranged in one direction in a single direction.

Hereinafter, the load port 100, the index module 200, the first buffer module 300, the coating and developing module 400, the second buffer module 500, the pre-exposure processing module 600, 700 are referred to as a first direction 12 and a direction perpendicular to the first direction 12 as viewed from above is referred to as a second direction 14 and a direction in which the first direction 12 and the second And a direction perpendicular to the direction 14 is referred to as a third direction 16.

The substrate W is moved in a state accommodated in the cassette 20. At this time, the cassette 20 has a structure that can be sealed from the outside. For example, as the cassette 20, a front open unified pod (FOUP) having a door at the front can be used.

Hereinafter, the load port 100, the index module 200, the first buffer module 300, the application and development module 400, the second buffer module 500, the pre-exposure processing module 600, 700 will be described in detail.

The load port 100 has a mounting table 120 on which the cassette 20 accommodating the substrates W is placed. A plurality of mounts 120 are provided, and the mounts 200 are arranged in a line along the second direction 14. [ In Fig. 2, four placement tables 120 are provided.

The index module 200 transfers the substrate W between the cassette 20 placed on the table 120 of the load port 100 and the first buffer module 300. The index module 200 has a frame 210, an index robot 220, and a guide rail 230. The frame 210 is provided generally in the shape of an inner rectangular parallelepiped and is disposed between the load port 100 and the first buffer module 300. The frame 210 of the index module 200 may be provided at a lower height than the frame 310 of the first buffer module 300 described later. The index robot 220 and the guide rail 230 are disposed within the frame 210. The index robot 220 is moved in the first direction 12, the second direction 14 and the third direction 16 so that the hand 221 that directly handles the substrate W can be moved and rotated in the first direction 12, the second direction 14, . The index robot 220 has a hand 221, an arm 222, a support 223, and a pedestal 224. The hand 221 is fixed to the arm 222. The arm 222 is provided with a stretchable structure and a rotatable structure. The support base 223 is disposed along the third direction 16 in the longitudinal direction. The arm 222 is coupled to the support 223 to be movable along the support 223. The support 223 is fixedly coupled to the pedestal 224. The guide rails 230 are provided so that their longitudinal direction is arranged along the second direction 14. The pedestal 224 is coupled to the guide rail 230 so as to be linearly movable along the guide rail 230. Further, although not shown, the frame 210 is further provided with a door opener for opening and closing the door of the cassette 20.

The first buffer module 300 has a frame 310, a first buffer 320, a second buffer 330, a cooling chamber 350, and a first buffer robot 360. The frame 310 is provided in the shape of an inner rectangular parallelepiped and is disposed between the index module 200 and the application and development module 400. The first buffer 320, the second buffer 330, the cooling chamber 350, and the first buffer robot 360 are located within the frame 310. The cooling chamber 350, the second buffer 330, and the first buffer 320 are sequentially disposed in the third direction 16 from below. The second buffer 330 and the cooling chamber 350 are located at a height corresponding to the coating module 401 of the coating and developing module 400 described later and the coating and developing module 400 at a height corresponding to the developing module 402. [ The first buffer robot 360 is spaced apart from the second buffer 330, the cooling chamber 350 and the first buffer 320 by a predetermined distance in the second direction 14.

The first buffer 320 and the second buffer 330 temporarily store a plurality of substrates W, respectively. The second buffer 330 has a housing 331 and a plurality of supports 332. The supports 332 are disposed within the housing 331 and are provided spaced apart from each other in the third direction 16. One substrate W is placed on each support 332. The housing 331 is constructed so that the index robot 220, the first buffer robot 360 and the developing robot 482 of the developing module 402 described later mount the substrate W on the support 332 in the housing 331 (Not shown) in the direction in which the index robot 220 is provided, in the direction in which the first buffer robot 360 is provided, and in the direction in which the developing robot 482 is provided, so that the developing robot 482 can carry it in or out. The first buffer 320 has a structure substantially similar to that of the second buffer 330. The housing 321 of the first buffer 320 has an opening in a direction in which the first buffer robot 360 is provided and in a direction in which the application unit robot 432 located in the application module 401 described later is provided. The number of supports 322 provided in the first buffer 320 and the number of supports 332 provided in the second buffer 330 may be the same or different. According to one example, the number of supports 332 provided in the second buffer 330 may be greater than the number of supports 322 provided in the first buffer 320.

The first buffer robot 360 transfers the substrate W between the first buffer 320 and the second buffer 330. The first buffer robot 360 has a hand 361, an arm 362, and a support base 363. The hand 361 is fixed to the arm 362. The arm 362 is provided in a stretchable configuration so that the hand 361 is movable along the second direction 14. The arm 362 is coupled to the support 363 so as to be linearly movable along the support 363 in the third direction 16. The support base 363 has a length extending from a position corresponding to the second buffer 330 to a position corresponding to the first buffer 320. The support member 363 may be provided longer in the upward or downward direction. The first buffer robot 360 may be provided so that the hand 361 is simply driven in two directions along the second direction 14 and the third direction 16.

The cooling chamber 350 cools the substrate W, respectively. The cooling chamber 350 has a housing 351 and a cooling plate 352. The cooling plate 352 has an upper surface on which the substrate W is placed and a cooling means 353 for cooling the substrate W. [ As the cooling means 353, various methods such as cooling with cooling water and cooling using a thermoelectric element can be used. In addition, the cooling chamber 350 may be provided with a lift pin assembly (not shown) for positioning the substrate W on the cooling plate 352. The housing 351 is provided with an index robot 220 so that the developing robot 482 provided in the index robot 220 and a developing module 402 to be described later can carry the substrate W into or out of the cooling plate 352 (Not shown) in the direction provided and the direction in which the developing robot 482 is provided. Further, the cooling chamber 350 may be provided with doors (not shown) for opening and closing the above-described opening.

The application and development module 400 performs a process of applying a photoresist on the substrate W before the exposure process and a process of developing the substrate W after the exposure process. The application and development module 400 has a generally rectangular parallelepiped shape. The coating and developing module 400 has a coating module 401 and a developing module 402. The application module 401 and the development module 402 are arranged so as to be partitioned into layers with respect to each other. According to one example, the application module 401 is located on top of the development module 402.

The application module 401 includes a process of applying a photosensitive liquid such as a photoresist to the substrate W and a heat treatment process such as heating and cooling for the substrate W before and after the resist application process. The application module 401 has a resist application unit 410, a bake unit 420, and a transfer chamber 430. The resist application unit 410, the bake unit 420, and the transfer chamber 430 are sequentially disposed along the second direction 14. [ The resist coating unit 410 and the bake unit 420 are positioned apart from each other in the second direction 14 with the transfer chamber 430 therebetween. A plurality of resist coating units 410 are provided, and a plurality of resist coating units 410 are provided in the first direction 12 and the third direction 16, respectively. In the drawing, an example in which six resist application units 410 are provided is shown. A plurality of bake units 420 are provided in the first direction 12 and the third direction 16, respectively. In the drawing, an example in which six bake units 420 are provided is shown. Alternatively, however, the bake unit 420 may be provided in more or less numbers.

The transfer chamber 430 is positioned in parallel with the first buffer 320 of the first buffer module 300 in the first direction 12. In the transfer chamber 430, a dispenser robot 432 and a guide rail 433 are positioned. The transfer chamber 430 has a generally rectangular shape. The application unit robot 432 is connected to the bake units 420, the resist application units 400, the first buffer 320 of the first buffer module 300 and the first buffer unit 500 of the second buffer module 500 And transfers the substrate W between the cooling chambers 520. The guide rails 433 are arranged so that their longitudinal directions are parallel to the first direction 12. The guide rails 433 guide the applying robot 432 to move linearly in the first direction 12. The applicator robot 432 has a hand 434, an arm 435, a support 436, and a pedestal 437. The hand 434 is fixed to the arm 435. The arm 435 is provided in a stretchable configuration so that the hand 434 is movable in the horizontal direction. The support 436 is provided so that its longitudinal direction is disposed along the third direction 16. The arm 435 is coupled to the support 436 so as to be linearly movable in the third direction 16 along the support 436. The support 436 is fixedly coupled to the pedestal 437 and the pedestal 437 is coupled to the guide rail 433 so as to be movable along the guide rail 433.

The resist coating units 410 all have the same structure. However, the types of the sensitizing solution used in the respective resist coating units 410 may be different from each other. For example, a chemical amplification resist may be used as the sensitizing solution. The resist coating unit 410 applies the photosensitive liquid onto the substrate W. [ The resist coating unit 410 has a housing 411, a support plate 412, and a nozzle 413. The housing 411 has a cup shape with an open top. The support plate 412 is located in the housing 411 and supports the substrate W. [ The support plate 412 is rotatably provided. The nozzle 413 supplies the sensitizing solution onto the substrate W placed on the support plate 412. The nozzle 413 has a circular tube shape and can supply the photosensitive liquid to the center of the substrate W. [ Alternatively, the nozzle 413 may have a length corresponding to the diameter of the substrate W, and the discharge port of the nozzle 413 may be provided as a slit. In addition, the resist coating unit 410 may further be provided with a nozzle 414 for supplying a cleaning liquid such as deionized water to clean the surface of the substrate W on which the photosensitive liquid is applied.

The bake unit 800 heat-treats the substrate W. The bake unit 800 heat-treats the substrate W before and after applying the photosensitive liquid. The bake unit 800 can heat the substrate W to a predetermined temperature so as to change the surface properties of the substrate W before applying the photosensitive liquid and form a process liquid film such as an adhesive on the substrate W have. The bake unit 800 can heat-treat the photosensitive liquid film in a reduced-pressure atmosphere on the substrate W coated with the photosensitive liquid. The volatile substance contained in the photosensitive liquid film can be volatilized. In this embodiment, the bake unit 800 is described as a unit for performing the heat treatment on the photosensitive liquid film.

The bake unit 800 includes a bake chamber 810, a cooling plate 820, and a heating unit 830. The bake chamber 810 has a processing space for baking the substrate W therein. In the processing space, a cooling plate 820 and a heating unit 830 are located. The bake chamber 810 may have a rectangular parallelepiped shape facing the second direction. An exhaust hole 818 for exhausting the atmosphere of the processing space is formed on the bottom surface of the bake chamber 810. An opening 814 is formed on one side of the bake chamber 810. The opening 814 can be opened and closed by a door 816. When the opening 814 is blocked by the door 816, the processing space is provided in an enclosed space.

The cooling plate 820 cools the substrate W heated by the heating unit 830. The cooling plate 820 is provided in the shape of a circular plate. Inside the cooling plate 820 is provided a cooling means such as a cooling water or a passive element. For example, the cooling plate 820 can cool the heated substrate W to room temperature.

The heating unit 830 heats the substrate W in a reduced-pressure atmosphere. Alternatively, the heating unit 830 may heat-treat the substrate W in an atmospheric pressure atmosphere. Fig. 7 is a cross-sectional view showing the heating unit of the bake unit of Fig. 3, and Fig. 8 is a plan view showing the heating unit of the bake unit of Fig. 7 and 8, the heating unit 830 includes a support plate 840, a gas supply line 850, a lower heating member 860, an upper heating member 900, and a controller 990 . The support plate 840 supports the substrate W. The support plate 840 is located on one side of the cooling plate 820. The support plate 840 and the cooling plate 820 are positioned in a line along the second direction. The support plate 840 is positioned closer to the opening 814 than the cooling plate 820. The support plate 840 has a circular plate shape. The upper surface of the support plate 840 is provided with a seating surface on which the substrate W is seated. For example, the seating surface has a diameter equal to or larger than that of the substrate W. A plurality of lift pins (not shown) are provided on the seating surface. The lift pins (not shown) may be lifted and moved to load the substrate W. For example, there may be three lift pins.

The gas supply line 850 supplies the atmospheric gas to the supply holes 817 formed in the bake chamber 810. The atmospheric gas is supplied to the processing space through the supply hole 817. According to one example, the supply hole 817 may be formed at the upper end of the bake chamber 810. Alternatively, a supply hole 817 may be formed in the inner surface of the bake chamber 810. The supply hole 817 can be positioned higher than the support plate 840. For example, the atmospheric gas may be an inert gas. The atmospheric gas may be nitrogen gas (N 2 ).

The lower heating member 860 heats the substrate W placed on the seating surface to a preset temperature. The lower heating member 860 heats the entire area of the seating surface. The temperature of the substrate W is raised together with the temperature of the seating surface. The lower heating member 860 includes a plurality of heaters 860. The heaters 860 are located inside the support plate 840. Each heater 860 is positioned on the same plane. Each of the heaters 860 heat-treats different areas of the seating surface. The areas of the support plate 840 corresponding to the respective heaters 860 are provided to the heating zones. For example, there can be 15 histones. The heater 860 may be a thermoelectric element or a hot wire.

The upper heating member 900 selectively heat-treats a part of the area of the substrate W. [ The upper heating member 900 heats the region where the temperature deviation has occurred. According to one example, some regions may include regions having lower temperatures than other regions. Some of the regions may include an edge region that is spaced from the center of the substrate W. [ The upper heating member 900 includes a heating plate 910 and moving members 920 and 930.

9 is a plan view showing the heating plate and substrate of FIG. The heating plate 910 has a circular plate shape. Optionally, the heating plate 910 may be provided in the form of a multiple plate. The heating plate 910 has a smaller diameter D 1 than the substrate W. [ For example, the diameter (D 1) of the heating plate 910 can be not more than 100 mm. A heater 860 is provided inside the heating plate 910. For example, the heater 860 may be a thermoelectric element or a hot wire. The heating plate 910 is movable by the moving members 920 and 930 to the process position and the standby position. Here, the process position is a position where the bottom surface of the heating plate 910 faces the substrate W, and a standby position is defined as a position out of the process position. The process position is higher than the substrate W. The process position may be such that a portion or all of the area of the heating plate 910 is opposed to the substrate W. [

7 and 8, the moving members 920 and 930 move the heating plate 910 to the process position and the standby position. The movable members 920 and 930 include an arm 920, an elevation shaft 930, and a guide rail 940. The arm 920 has a bar shape directed toward the first direction. A heating plate 910 is fixedly coupled to an end of the arm 920. The arm 920 is adjustable in length in the first direction. The arm 920 includes a first arm 922 and a second arm 924. Each of the first arm 922 and the second arm 924 has a longitudinal direction toward the first direction. The first arm 922 has a bar shape, and the second arm 924 has a tubular shape into which the first arm 922 can be inserted. A heating plate 910 is fixedly coupled to the first arm 922. As the first arm 922 is moved in the first direction, the length of the arm 920 is adjusted and the heating plate 910 is movable in the first direction.

The lifting shaft 930 supports the arm 920. The elevating shaft 930 is movable up and down to adjust the height of the arm 920 and the heating plate 910. The elevating shaft 930 has a bar shape directed toward the third direction. The lifting shaft 930 is adjustable in length in the third direction. The lifting shaft 930 includes a first shaft 932 and a second shaft 934. Each of the first axis 932 and the second axis 934 has a longitudinal direction toward the third direction. The first shaft 932 has a bar shape and the second shaft 934 has a tubular shape into which the first shaft 932 can be inserted. A second arm 924 is fixedly coupled to the first shaft 932. As the first shaft 932 moves in the third direction, the length of the lifting shaft 930 is adjusted and the height of the arm 920 and the heating plate 910 supported thereby is adjusted.

The guide rail 940 is positioned on one side of the support plate 840. The support plate 840 has a longitudinal direction toward the second direction. The guide rail 940 is provided with a second shaft 934 of the elevation shaft 930. The elevating shaft 930 is movable in the second direction by a driver provided on the guide rail 940. As the lifting shaft 930 moves in the second direction, the arm 920 and the heating plate 910 supported thereon are movable in the second direction. The heating plate 910 is moved in the second direction and is movable to the process position and the standby position.

The exhaust hole 818 described above will be described in more detail below. A plurality of exhaust holes 818 are formed in the bottom surface of the bake chamber 810. The exhaust holes 818 are arranged so as to surround the periphery of the support plate 840 when viewed from above. The respective exhaust holes 818 are spaced apart from each other at equal intervals. An exhaust line 950 is connected to each exhaust hole 818. A pressure reducing member 952 is connected to the exhaust line 950. The pressure-reducing member 952 can decompress the processing space to exhaust the atmosphere of the processing space.

The controller 990 controls the moving members 920 and 930 of the upper heating member 900. The movable members 920 and 930 move the heating plate 910 so as to heat a part of the area of the substrate W. [ Referring to FIG. 10, the movement path of the heating plate 910 may have an annular ring shape when viewed from above. According to one example, the heating plate 910 can heat a region of the substrate W other than the center thereof.

Alternatively, the moving members 920 and 930 can adjust the height of the heating plate 910 according to the area where the heating plate 910 faces the substrate W. [ 11, the heating plate 910 is moved to a first height at a position opposite the first area of the substrate W and is lower than the first height at a position opposite the second area of the substrate W And can be moved to a second height. The first region may be a region including the center of the substrate W and the second region may be a region including an edge region excluding the center of the substrate W. [

Next, a method of heating the substrate W using the above-described bake unit 800 will be described. When the substrate W is placed on the support plate 840, the entire area of the substrate W is heat-treated by the lower heating member 860. The heating plate 910 is moved from the standby position to the process position to heat the edge region of the substrate W. [ The heating plate 910 is moved along the side of the substrate W when viewed from above. Alternatively, the heating plate 910 may be scanned relative to the entire area of the substrate W. [ The heating plate 910 is located at a first height in an area including the center of the substrate W while scanning the entire area and is located at a second height lower than the first height in the edge area of the substrate W .

Referring again to FIGS. 3 to 6, the developing module 402 includes a developing process for supplying a developing solution to obtain a pattern on the substrate W to remove a part of the photoresist, And a heat treatment process such as heating and cooling performed on the substrate. The development module 402 has a development unit 460, a bake unit 470, and a transfer chamber 480. [ The developing unit 460, the bake unit 470, and the transfer chamber 480 are sequentially disposed along the second direction 14. The developing unit 460 and the bake unit 470 are positioned apart from each other in the second direction 14 with the transfer chamber 480 therebetween. A plurality of developing units 460 are provided, and a plurality of developing units 460 are provided in the first direction 12 and the third direction 16, respectively. In the drawing, an example in which six developing units 460 are provided is shown. A plurality of bake units 470 are provided in the first direction 12 and the third direction 16, respectively. In the drawing, an example in which six bake units 470 are provided is shown. Alternatively, however, the bake unit 470 may be provided in a greater number.

The transfer chamber 480 is positioned in parallel with the second buffer 330 of the first buffer module 300 in the first direction 12. In the transfer chamber 480, the developing robot 482 and the guide rail 483 are positioned. The delivery chamber 480 has a generally rectangular shape. The developing robot 482 includes bake units 470, developing units 460, a second buffer 330 and a cooling chamber 350 of the first buffer module 300 and a second buffer module 500, And the second cooling chamber 540 of the second cooling chamber 540. The guide rail 483 is arranged such that its longitudinal direction is parallel to the first direction 12. The guide rail 483 guides the developing robot 482 to linearly move in the first direction 12. The developing sub-robot 482 has a hand 484, an arm 485, a supporting stand 486, and a pedestal 487. The hand 484 is fixed to the arm 485. The arm 485 is provided in a stretchable configuration to allow the hand 484 to move in a horizontal direction. The support 486 is provided so that its longitudinal direction is disposed along the third direction 16. The arm 485 is coupled to the support 486 such that it is linearly movable along the support 486 in the third direction 16. The support table 486 is fixedly coupled to the pedestal 487. The pedestal 487 is coupled to the guide rail 483 so as to be movable along the guide rail 483.

The developing units 460 all have the same structure. However, the types of developers used in the respective developing units 460 may be different from each other. The developing unit 460 removes a region of the photoresist on the substrate W irradiated with light. At this time, the area of the protective film irradiated with the light is also removed. Depending on the type of selectively used photoresist, only the areas of the photoresist and protective film that are not irradiated with light can be removed.

The developing unit 460 has a housing 461, a support plate 462, and a nozzle 463. The housing 461 has a cup shape with an open top. The support plate 462 is located in the housing 461 and supports the substrate W. [ The support plate 462 is rotatably provided. The nozzle 463 supplies the developer onto the substrate W placed on the support plate 462. The nozzle 463 has a circular tube shape and can supply developer to the center of the substrate W. [ Alternatively, the nozzle 463 may have a length corresponding to the diameter of the substrate W, and the discharge port of the nozzle 463 may be provided with a slit. Further, the developing unit 460 may further be provided with a nozzle 464 for supplying a cleaning liquid such as deionized water to clean the surface of the substrate W to which the developer is supplied.

The bake unit 470 of the developing module 402 heat-treats the substrate W. [ For example, the bake units 470 may include a post bake process in which the substrate W is heated before the development process is performed, a hard bake process in which the substrate W is heated after the development process is performed, And a cooling step for cooling the substrate W is performed. The bake unit 470 has a cooling plate 471 or a heating plate 472. The cooling plate 471 is provided with a cooling means 473 such as a cooling water or a thermoelectric element. Or the heating plate 472 is provided with a heating means 474 such as a hot wire or a thermoelectric element. The cooling plate 471 and the heating plate 472 may be provided in a single bake unit 470, respectively. Optionally, some of the bake units 470 may include only the cooling plate 471, while others may only have the heating plate 472. [ Since the bake unit 470 of the developing module 402 has the same configuration as that of the bake unit of the application module 401, detailed description thereof will be omitted. However, unlike the first heating unit of the application module 401, the bake unit 470 of the developing module 402 can change the surface properties of the substrate.

The second buffer module 500 is provided as a path through which the substrate W is transferred between the coating and developing module 400 and the pre- and post-exposure processing module 600. The second buffer module 500 performs a predetermined process on the substrate W such as a cooling process or an edge exposure process. The second buffer module 500 includes a frame 510, a buffer 520, a first cooling chamber 530, a second cooling chamber 540, an edge exposure chamber 550, and a second buffer robot 560 I have. The frame 510 has a rectangular parallelepiped shape. The buffer 520, the first cooling chamber 530, the second cooling chamber 540, the edge exposure chamber 550, and the second buffer robot 560 are located within the frame 510. The buffer 520, the first cooling chamber 530, and the edge exposure chamber 550 are disposed at a height corresponding to the application module 401. The second cooling chamber 540 is disposed at a height corresponding to the development module 402. The buffer 520, the first cooling chamber 530, and the second cooling chamber 540 are sequentially arranged in a row along the third direction 16. The buffer 520 is disposed along the first direction 12 with the transfer chamber 430 of the application module 401. [ The edge exposure chamber 550 is spaced a certain distance in the second direction 14 from the buffer 520 or the first cooling chamber 530.

The second buffer robot 560 carries the substrate W between the buffer 520, the first cooling chamber 530, and the edge exposure chamber 550. A second buffer robot 560 is positioned between the edge exposure chamber 550 and the buffer 520. The second buffer robot 560 may be provided in a structure similar to that of the first buffer robot 360. The first cooling chamber 530 and the edge exposure chamber 550 perform a subsequent process on the substrates W that have been processed in the application module 401. The first cooling chamber 530 cools the substrate W processed in the application module 401. The first cooling chamber 530 has a structure similar to the cooling chamber 350 of the first buffer module 300. The edge exposure chamber 550 exposes its edge to the substrates W that have undergone the cooling process in the first cooling chamber 530. [ The buffer 520 temporarily stores the substrate W before the substrates W processed in the edge exposure chamber 550 are transported to a preprocessing module 601 described later. The second cooling chamber 540 cools the substrates W before the processed substrates W are transferred to the developing module 402 in the post-processing module 602 described later. The second buffer module 500 may further have a buffer added to the height corresponding to the development module 402. In this case, the substrates W processed in the post-processing module 602 may be temporarily stored in the added buffer and then conveyed to the developing module 402.

The pre- and post-exposure processing module 600 may process a process of applying a protective film for protecting the photoresist film applied to the substrate W during liquid immersion exposure, when the exposure apparatus 900 performs the liquid immersion exposure process. In addition, the pre- and post-exposure processing module 600 may perform a process of cleaning the substrate W after exposure. In addition, when the coating process is performed using the chemically amplified resist, the pre- and post-exposure processing module 600 can process the post-exposure bake process.

The pre-exposure post-processing module 600 has a pre-processing module 601 and a post-processing module 602. The pre-processing module 601 performs a process of processing the substrate W before the exposure process, and the post-process module 602 performs a process of processing the substrate W after the exposure process. The pre-processing module 601 and the post-processing module 602 are arranged so as to be partitioned into layers with respect to each other. According to one example, the preprocessing module 601 is located on top of the post-processing module 602. The preprocessing module 601 is provided at the same height as the application module 401. The post-processing module 602 is provided at the same height as the developing module 402. The preprocessing module 601 has a protective film application unit 610, a bake unit 620, and a transfer chamber 630. The protective film application unit 610, the transfer chamber 630, and the bake unit 620 are sequentially disposed along the second direction 14. [ The protective film applying unit 610 and the bake unit 620 are positioned apart from each other in the second direction 14 with the transfer chamber 630 therebetween. A plurality of protective film application units 610 are provided, and are arranged along the third direction 16 to form a layer with each other. Alternatively, a plurality of protective film application units 610 may be provided in the first direction 12 and the third direction 16, respectively. A plurality of bake units 620 are provided and are disposed along the third direction 16 to form layers. Alternatively, the plurality of bake units 620 may be provided in the first direction 12 and the third direction 16, respectively.

The transfer chamber 630 is positioned in parallel with the first cooling chamber 530 of the second buffer module 500 in the first direction 12. In the transfer chamber 630, a pre-processing robot 632 is located. The transfer chamber 630 has a generally square or rectangular shape. The preprocessing robot 632 is connected between the protective film application units 610, the bake units 620, the buffer 520 of the second buffer module 500 and the first buffer 720 of the interface module 700, The substrate W is transferred. The preprocessing robot 632 has a hand 633, an arm 634, and a support 635. The hand 633 is fixed to the arm 634. The arm 634 is provided with a retractable structure and a rotatable structure. The arm 634 is coupled to the support 635 so as to be linearly movable along the support 635 in the third direction 16.

The protective film coating unit 610 applies a protective film for protecting the resist film on the substrate W during liquid immersion exposure. The protective film application unit 610 has a housing 611, a support plate 612, and a nozzle 613. The housing 611 has a cup shape with its top opened. The support plate 612 is located in the housing 611 and supports the substrate W. [ The support plate 612 is rotatably provided. The nozzle 613 supplies a protective liquid for forming a protective film onto the substrate W placed on the supporting plate 612. The nozzle 613 has a circular tube shape and can supply the protective liquid to the center of the substrate W. [ Alternatively, the nozzle 613 may have a length corresponding to the diameter of the substrate W, and the discharge port of the nozzle 613 may be provided with a slit. In this case, the support plate 612 may be provided in a fixed state. The protective liquid includes a foamable material. The protective liquid may be a photoresist and a material having a low affinity for water. For example, the protective liquid may contain a fluorine-based solvent. The protective film applying unit 610 supplies the protective liquid to the central region of the substrate W while rotating the substrate W placed on the supporting plate 612. [

The bake unit 620 heat-treats the substrate W coated with the protective film. The bake unit 620 has a cooling plate 621 or a heating plate 622. The cooling plate 621 is provided with a cooling means 623 such as a cooling water or a thermoelectric element. Or heating plate 622 is provided with a heating means 624, such as a hot wire or a thermoelectric element. The heating plate 622 and the cooling plate 621 may be provided in a single bake unit 620, respectively. Optionally, some of the bake units 620 may include only the heating plate 622, while others may only include the cooling plate 621.

The post-processing module 602 has a cleaning chamber 660, a post-exposure bake unit 670, and a delivery chamber 680. The cleaning chamber 660, the transfer chamber 680, and the post-exposure bake unit 670 are sequentially disposed along the second direction 14. Therefore, the cleaning chamber 660 and the post-exposure bake unit 670 are positioned apart from each other in the second direction 14 with the transfer chamber 680 therebetween. A plurality of cleaning chambers 660 are provided and may be disposed along the third direction 16 to form layers. Alternatively, a plurality of cleaning chambers 660 may be provided in the first direction 12 and the third direction 16, respectively. A plurality of post-exposure bake units 670 are provided, and may be disposed along the third direction 16 to form layers. Alternatively, a plurality of post-exposure bake units 670 may be provided in the first direction 12 and the third direction 16, respectively.

The transfer chamber 680 is positioned in parallel with the second cooling chamber 540 of the second buffer module 500 in the first direction 12 as viewed from above. The transfer chamber 680 has a generally square or rectangular shape. A post processing robot 682 is located in the transfer chamber 680. The post-processing robot 682 is connected to the cleaning chambers 660, the post-exposure bake units 670, the second cooling chamber 540 of the second buffer module 500, and the second And transfers the substrate W between the buffers 730. The postprocessing robot 682 provided in the postprocessing module 602 may be provided with the same structure as the preprocessing robot 632 provided in the preprocessing module 601. [

The cleaning chamber 660 cleans the substrate W after the exposure process. The cleaning chamber 660 has a housing 661, a support plate 662, and a nozzle 663. The housing 661 has a cup shape with an open top. The support plate 662 is located in the housing 661 and supports the substrate W. [ The support plate 662 is rotatably provided. The nozzle 663 supplies the cleaning liquid onto the substrate W placed on the support plate 662. As the cleaning liquid, water such as deionized water may be used. The cleaning chamber 660 supplies the cleaning liquid to the central region of the substrate W while rotating the substrate W placed on the support plate 662. Optionally, while the substrate W is rotating, the nozzle 663 may move linearly or rotationally from the central region of the substrate W to the edge region.

The post-exposure bake unit 670 uses the deep ultraviolet light to heat the substrate W subjected to the exposure process. The post-exposure baking step heats the substrate W and amplifies the acid generated in the photoresist by exposure to complete the property change of the photoresist. The post-exposure bake unit 670 has a heating plate 672. The heating plate 672 is provided with a heating means 674 such as a hot wire or a thermoelectric element. The post-exposure bake unit 670 may further include a cooling plate 671 therein. The cooling plate 671 is provided with a cooling means 673 such as a cooling water or a thermoelectric element. Further, a bake unit having only a cooling plate 671 may be further provided.

As described above, the pre-processing module 601 and the post-processing module 602 in the pre-exposure processing module 600 are provided to be completely separated from each other. The transfer chamber 630 of the preprocessing module 601 and the transfer chamber 680 of the postprocessing module 602 are provided in the same size and can be provided so as to completely overlap each other when viewed from above. In addition, the protective film application unit 610 and the cleaning chamber 660 may be provided to have the same size as each other and be provided so as to completely overlap each other when viewed from above. In addition, the bake unit 620 and the post-exposure bake unit 670 are provided in the same size and can be provided so as to completely overlap each other when viewed from above.

The interface module 700 transfers the substrate W between the exposure pre- and post-processing module 600 and the exposure apparatus 900. The interface module 700 has a frame 710, a first buffer 720, a second buffer 730, and an interface robot 740. The first buffer 720, the second buffer 730, and the interface robot 740 are located within the frame 710. The first buffer 720 and the second buffer 730 are spaced apart from each other by a predetermined distance and are stacked on each other. The first buffer 720 is disposed higher than the second buffer 730. The first buffer 720 is positioned at a height corresponding to the preprocessing module 601 and the second buffer 730 is positioned at a height corresponding to the postprocessing module 602. The first buffer 720 is arranged in a line along the first direction 12 with the transfer chamber 630 of the preprocessing module 601 while the second buffer 730 is arranged in the postprocessing module 602, Are arranged in a line along the first direction 12 with the transfer chamber 630 of the transfer chamber 630. [

The interface robot 740 is spaced apart from the first buffer 720 and the second buffer 730 in the second direction 14. The interface robot 740 carries the substrate W between the first buffer 720, the second buffer 730 and the exposure apparatus 900. The interface robot 740 has a structure substantially similar to that of the second buffer robot 560.

The first buffer 720 temporarily stores the substrates W processed in the preprocessing module 601 before they are transferred to the exposure apparatus 900. The second buffer 730 temporarily stores the processed substrates W in the exposure apparatus 900 before they are transferred to the post-processing module 602. The first buffer 720 has a housing 721 and a plurality of supports 722. The supports 722 are disposed within the housing 721 and are provided spaced apart from each other in the third direction 16. One substrate W is placed on each support 722. The housing 721 is movable in the direction in which the interface robot 740 is provided and in the direction in which the interface robot 740 and the preprocessing robot 632 transfer the substrate W to and from the support table 722, 632 are provided with openings (not shown) in the direction in which they are provided. The second buffer 730 has a structure substantially similar to that of the first buffer 720. However, the housing 4531 of the second buffer 730 has an opening (not shown) in the direction in which the interface robot 740 is provided and in a direction in which the postprocessing robot 682 is provided. The interface module may be provided with only the buffers and robots as described above without providing a chamber for performing a predetermined process on the substrate.

800: Bake unit 840: Support play
900: upper heating member 910: heating plate
920: arm 930: lifting shaft
960: lower heating member 990: controller

Claims (11)

A support plate having a seating surface on which an upper surface of the substrate is seated;
And an upper heating member for heating the substrate placed on the seating surface above the seating surface,
The upper heating member
A heating plate for heating the substrate above the seating surface;
And a moving member for moving the heating plate,
Wherein the heating plate has a smaller area than the seating surface. The method according to claim 1,
The bake unit
And a lower heating member provided on the support plate for heating the seating surface. 3. The method of claim 2,
The moving member includes:
An arm for supporting the heating plate;
And a lift shaft supporting the arm and being movable up and down to adjust a height of the arm. The method according to claim 1,
The bake unit may include:
A chamber having a processing space in which the support plate is located;
Further comprising an exhaust line connected to an exhaust hole formed in a bottom surface of the chamber and exhausting the atmosphere of the processing space,
Wherein a plurality of the exhaust holes are provided, and the exhaust holes are arranged to surround the support plate when viewed from above. The method according to claim 3 or 4,
The bake unit may include:
Further comprising a controller for controlling said moving member,
Wherein the controller controls the heating plate to heat the center of the substrate and the edge region excluding the center,
Wherein the moving member is controlled such that a first distance between the center and the heating plate and a second distance between the edge area and the heating plate are different from each other. 6. The method of claim 5,
Wherein the second distance is longer than the first distance. The method according to claim 3 or 4,
The bake unit may include:
Further comprising a controller for controlling said moving member,
Wherein the controller controls the moving member so that the heating plate selectively heats a partial area of the substrate. 8. The method of claim 7,
Wherein the portion comprises an edge region spaced from a central region of the substrate. A method for baking a substrate,
Wherein a heater located below the substrate heats the entire area of the substrate and a heating plate with a smaller area than the substrate heats a portion of the substrate above the substrate. 10. The method of claim 9,
Heating a portion of the substrate,
Adjusting a height of the heating plate according to an area of the substrate,
Wherein the heating plate is moved to a first height as it is closer to the center of the substrate and is moved to a second height lower than the first height as it is closer to an edge area of the substrate. 10. The method of claim 9,
Heating a portion of the substrate,
Wherein the heating plate is moved to heat an edge region of the substrate.


KR1020150138569A 2015-10-01 2015-10-01 Bake unit and Method for treating substrate KR20170039798A (en)

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Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20080020037A (en) 2006-08-30 2008-03-05 세메스 주식회사 Spinner local facility and method for coating photo-resist of the spinner local facility

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20080020037A (en) 2006-08-30 2008-03-05 세메스 주식회사 Spinner local facility and method for coating photo-resist of the spinner local facility

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