KR20170025964A - Electrostatic chuck and substrate treating apparatus including the same - Google Patents

Electrostatic chuck and substrate treating apparatus including the same Download PDF

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Publication number
KR20170025964A
KR20170025964A KR1020150123134A KR20150123134A KR20170025964A KR 20170025964 A KR20170025964 A KR 20170025964A KR 1020150123134 A KR1020150123134 A KR 1020150123134A KR 20150123134 A KR20150123134 A KR 20150123134A KR 20170025964 A KR20170025964 A KR 20170025964A
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KR
South Korea
Prior art keywords
adhesive layer
filler
adhesive
dielectric plate
substrate
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Application number
KR1020150123134A
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Korean (ko)
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KR101791871B1 (en
Inventor
이상기
Original Assignee
세메스 주식회사
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Priority to KR1020150123134A priority Critical patent/KR101791871B1/en
Publication of KR20170025964A publication Critical patent/KR20170025964A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Abstract

The present invention relates to an electrostatic chuck provided in a substrate processing apparatus. An electrostatic chuck according to an embodiment of the present invention includes a dielectric plate including an electrode for attracting the substrate with an electrostatic force; A body located below the dielectric plate and provided with a cooling member for cooling the electrostatic chuck therein; And an adhesive layer disposed between the dielectric plate and the body and fixing the dielectric plate and the body, wherein the adhesive layer includes a first adhesive and a plurality of And a first adhesive layer comprising a first filler.

Description

TECHNICAL FIELD [0001] The present invention relates to an electrostatic chuck and a substrate processing apparatus including the electrostatic chuck.

The present invention relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus using plasma.

In order to manufacture a semiconductor device, a substrate is subjected to various processes such as photolithography, etching, ashing, ion implantation, thin film deposition, and cleaning to form a desired pattern on the substrate. Among them, the wet etching and the dry etching are used for removing the selected heating region from the film formed on the substrate.

Among them, an etching apparatus using a plasma is used for dry etching. Generally, in order to form a plasma, an electromagnetic field is formed in an inner space of a chamber, and an electromagnetic field excites a process gas provided in the chamber into a plasma state.

Plasma is an ionized gas state composed of ions, electrons, radicals, and so on. Plasma is generated by very high temperatures, strong electric fields, or RF electromagnetic fields. The semiconductor device fabrication process employs a plasma to perform the etching process. The etching process is performed by colliding the ion particles contained in the plasma with the substrate.

1 is a cross-sectional view showing a general substrate processing apparatus 1. 1, the electrostatic chuck 4 supporting the substrate 3 in the chamber 2 is provided on the body 6 on which the cooling channel 5 is formed and on the body 6, and the electrostatic chuck 4 7 includes a dielectric plate 8 provided therein. In general, a high-elasticity insulating adhesive 9 is used to fix the body 6 and the dielectric plate 8 provided with different materials to each other.

In this case, it is easy to overcome the structural reliability problem of the joint surface due to the difference in thermal expansion coefficient between the body 6 and the dielectric plate 8, as the thicker the high-elasticity adhesive 9 is provided. However, since the general insulating adhesive 9 has a low thermal conductivity, it can not be provided over a certain thickness for easy heat transfer of the body 6 and the dielectric plate 8. Therefore, the temperature difference between the substrate 3 and the cooling passage 5 can not be provided at a predetermined temperature or more due to the structural reliability problem of the joint surface due to the difference in thermal expansion coefficient between the body 6 and the dielectric plate 8.

In general, it is also possible to adjust the width and height of the cooling passage 5 differently for each region in order to control the heat distribution by region in the upper portion of the electrostatic chuck 4 for uniform substrate processing. .

The present invention is to provide an apparatus which can thickly provide an adhesive layer for bonding a body and a dielectric plate.

It is another object of the present invention to provide a device capable of preventing a structural reliability problem of a joint surface due to a difference in thermal expansion coefficient between a body and a dielectric plate.

Further, the present invention is to provide a device capable of setting a large temperature difference between the substrate and the cooling channel.

It is another object of the present invention to provide an apparatus capable of easily controlling the heat distribution in each region when viewed from the top of the electrostatic chuck.

The present invention also provides a device capable of uniformly treating a substrate.

The present invention provides an electrostatic chuck. An electrostatic chuck according to an embodiment of the present invention includes a dielectric plate including a substrate and an electrostatic electrode for attracting the substrate by electrostatic force; A body located below the dielectric plate and provided with a cooling member for cooling the electrostatic chuck therein; And an adhesive layer disposed between the dielectric plate and the body and fixing the dielectric plate and the body, wherein the adhesive layer includes a first adhesive and a plurality of And a first adhesive layer comprising a first filler.

The first pillar is provided in a polygonal plate shape. The first filler is provided as a graphite material in the shape of a hexagonal plate. The first filler is provided so as to be polygonal when viewed from the front.

The first filler may be provided in a cylindrical shape. The first filler may be provided as a carbon nanotube material. The first filler may be provided in the vertical direction in the longitudinal direction.

The first filler may be provided at different densities for each region of the first adhesive layer when viewed from above.

The first filler may be provided at an edge area of the first adhesive layer at a density higher than a central area of the first adhesive layer.

The adhesive layer may be provided to be laminated on the first adhesive layer, and may further include a second adhesive layer having a thermal conductivity lower than that of the first adhesive layer.

Wherein the second adhesive layer comprises: a second adhesive; And a plurality of second pillars in the second adhesive, wherein the second pillars have a lower thermal conductivity in the vertical direction than the first pillars.

The adhesive layer is differently provided for each region when the ratio of the thickness between the first adhesive layer and the second adhesive layer is viewed from the top.

The first adhesive layer is provided thicker in the edge region of the adhesive layer than in the central region of the adhesive layer when viewed from above.

The adhesive layer may be provided with the same thickness as a whole when viewed from the front.

The present invention also provides a substrate processing apparatus. A substrate processing apparatus according to an embodiment of the present invention includes a chamber for processing a substrate and having a processing space therein; A support unit disposed in the processing space and having an electrostatic chuck on which a substrate is placed; A gas supply unit for supplying a process gas into the process space; A plasma source for generating a plasma from the process gas in the processing space, the electrostatic chuck comprising: a dielectric plate comprising an electrostatic electrode for adsorbing the substrate with an electrostatic force; A body located below the dielectric plate and provided with a cooling member for cooling the electrostatic chuck therein; And an adhesive layer disposed between the dielectric plate and the body and fixing the dielectric plate and the body, wherein the adhesive layer includes a first adhesive and a plurality of And a first adhesive layer comprising a first filler.

The first pillar is provided in a polygonal plate shape. The first filler is provided as a graphite material in the shape of a hexagonal plate. The first filler is provided so as to be polygonal when viewed from the front.

The first filler may be provided in a cylindrical shape. The first filler may be provided as a carbon nanotube material. The first filler may be provided in the vertical direction in the longitudinal direction.

The first filler is provided at different densities for each region of the first adhesive layer when viewed from above.

The first filler is provided at an edge region of the first adhesive layer at a higher density than the central region of the first adhesive layer.

The adhesive layer is provided to be laminated on the first adhesive layer, and further includes a second adhesive layer having a thermal conductivity lower than that of the first adhesive layer.

Wherein the second adhesive layer comprises: a second adhesive; And a plurality of second pillars in the second adhesive, wherein the second pillars have a lower thermal conductivity in the vertical direction than the first pillars.

The adhesive layer is differently provided for each region when the ratio of the thickness between the first adhesive layer and the second adhesive layer is viewed from the top.

The first adhesive layer is provided thicker in the edge region of the adhesive layer than in the central region of the adhesive layer when viewed from above.

An apparatus according to an embodiment of the present invention can provide a thick adhesive layer for bonding the body and the dielectric plate.

In addition, the apparatus according to an embodiment of the present invention can prevent the reliability problem of the joint surface due to the difference in thermal expansion coefficient between the body and the dielectric plate.

Further, the apparatus according to an embodiment of the present invention can set a large temperature difference between the substrate and the cooling channel.

In addition, the apparatus according to an embodiment of the present invention can easily control heat distribution by region when viewed from the top of the electrostatic chuck.

Further, an apparatus according to an embodiment of the present invention can uniformly process a substrate.

1 is a sectional view showing a general substrate processing apparatus.
2 is a cross-sectional view illustrating a substrate processing apparatus according to an embodiment of the present invention.
Figure 3 is a cross-sectional view showing the adhesive layer of Figure 2;
4 is a view showing a part of the adhesive layer of Fig.
5 is a view showing a part of the adhesive layer of Fig. 3 according to another embodiment.
6 is a view showing the adhesive layer of FIG. 2 according to another embodiment.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The embodiments of the present invention can be modified in various forms, and the scope of the present invention should not be construed as being limited to the following embodiments. This embodiment is provided to more fully describe the present invention to those skilled in the art. Thus, the shape of the elements in the figures has been exaggerated to emphasize a clearer description.

In an embodiment of the present invention, a substrate processing apparatus for etching a substrate using plasma will be described. However, the present invention is not limited to this, but can be applied to various kinds of apparatuses required to fix the body and the dielectric plate provided with mutually different materials to each other using an adhesive.

Further, in the embodiment of the present invention, a substrate processing apparatus for etching a substrate by generating a plasma by an inductively coupled plasma (ICP) method will be described. However, the present invention is not limited to this, and can be applied to various types of apparatuses that process substrates using a plasma, such as a capacitively coupled plasma (CCP) method or a remote plasma method.

2 is a cross-sectional view illustrating a substrate processing apparatus according to an embodiment of the present invention. Referring to FIG. 2, the substrate processing apparatus 10 processes the substrate W using a plasma. For example, the substrate processing apparatus 10 may perform an etching process on the substrate W. [ The substrate processing apparatus 10 includes a chamber 100, a support unit 200, a gas supply unit 300, a plasma source 400, and an exhaust unit 500.

The chamber 100 has a processing space for processing the substrate. The chamber 100 includes a housing 110, a cover 120, and a liner 130.

The housing 110 has a space in which an upper surface is opened. The inner space of the housing 110 is provided to the processing space where the substrate processing process is performed. The housing 110 is made of a metal material. The housing 110 may be made of aluminum. The housing 110 may be grounded. An exhaust hole 102 is formed in the bottom surface of the housing 110. The exhaust hole 102 is connected to the exhaust line 151. The reaction by-products generated in the process and the gas staying in the inner space of the housing can be discharged to the outside through the exhaust line 151. The inside of the housing 110 is decompressed to a predetermined pressure by the exhaust process.

The cover 120 covers the open upper surface of the housing 110. The cover 120 is provided in a plate shape to seal the inner space of the housing 110. The cover 120 may include a dielectric substance window.

The liner 130 is provided inside the housing 110. The liner 130 has an inner space with open top and bottom surfaces. The liner 130 may be provided in a cylindrical shape. The liner 130 may have a radius corresponding to the inner surface of the housing 110. The liner 130 is provided along the inner surface of the housing 110. At the upper end of the liner 130, a support ring 131 is formed. The support ring 131 is provided in the form of a ring and projects outwardly of the liner 130 along the periphery of the liner 130. The support ring 131 rests on the top of the housing 110 and supports the liner 130. The liner 130 may be provided in the same material as the housing 110. The liner 130 may be made of aluminum. The liner 130 protects the inside surface of the housing 110. An arc discharge may be generated in the chamber 100 during the process gas excitation. Arc discharge damages peripheral devices. The liner 130 protects the inner surface of the housing 110 to prevent the inner surface of the housing 110 from being damaged by the arc discharge. In addition, reaction byproducts generated during the substrate processing process are prevented from being deposited on the inner wall of the housing 110. The liner 130 is less expensive than the housing 110 and is easier to replace. Thus, if the liner 130 is damaged by an arc discharge, the operator can replace the new liner 130.

The support unit 200 supports the substrate within the processing space inside the chamber 100. For example, the support unit 200 is disposed inside the housing 110. The support unit 200 supports the substrate W. [ The supporting unit 200 includes an electrostatic chuck 201 that sucks the substrate W using an electrostatic force. The support unit 200 includes an electrostatic chuck 201 and a lower cover 270. The support unit 200 may be provided to be spaced apart from the bottom surface of the housing 110 inside the chamber 100.

The electrostatic chuck 201 includes a dielectric plate 220, a body 230, a focus ring 240, an insulating plate 250 and an adhesive layer 280.

The dielectric plate (200) is provided with a substrate (W). The dielectric plate 220 is located at the upper end of the electrostatic chuck 201. The dielectric plate 220 is provided as a disk-shaped dielectric substance. A substrate W is placed on the upper surface of the dielectric plate 220. The upper surface of the dielectric plate 220 has a smaller radius than the substrate W. [ The dielectric plate 220 is formed with a supply passage 221 used as a passage through which a heat transfer gas is supplied to the bottom surface of the substrate W. The dielectric plate 220 includes an electrostatic electrode 223 and a heater 225 therein.

The electrostatic electrode 223 is located on the top of the heater 225. The electrostatic electrode 223 is electrically connected to the first lower power source 223a. An electrostatic force is applied between the electrostatic electrode 223 and the substrate W by the current applied to the electrostatic electrode 223 and the substrate W is attracted to the dielectric plate 220 by the electrostatic force.

The heater 225 is electrically connected to the second lower power source 225a. The heater 225 generates heat by resisting the current applied from the second lower power supply 225a. The generated heat is transferred to the substrate W through the dielectric plate 220. The substrate W is maintained at a predetermined temperature by the heat generated in the heater 225. The heater 225 includes a helical coil. The body 230 is positioned below the dielectric plate 220. The bottom surface of the dielectric plate 220 and the top surface of the body 230 are bonded together by an adhesive layer 280.

The body 230 is located below the dielectric plate 220. The body 230 is provided with a cooling member for cooling the electrostatic chuck 201 therein. The cooling member can be provided as a cooling flow passage through which the cooling fluid flows. For example, a first circulation channel 231, a second circulation channel 232, and a second supply channel 233 are formed in the body 230. The first circulation passage 231 is provided as a passage through which the heat transfer gas circulates. The second circulating flow path 232 is provided as a cooling member for cooling the electrostatic chuck 201. The second circulation flow passage 232 is provided as a passage through which the cooling fluid circulates. The second supply passage 233 connects the first circulation passage 231 with the supply passage 221. The first circulation passage 231 is provided as a passage through which the heat transfer gas circulates. The first circulation flow path 231 may be formed in a spiral shape inside the body 230. Alternatively, the first circulation flow path 231 may be arranged so that the ring-shaped flow paths having different radii have the same center. Each of the first circulation flow paths 231 can communicate with each other. The first circulation flow paths 231 are formed at the same height.

The first circulation channel 231 is connected to the heat transfer medium storage unit 231a through the heat transfer medium supply line 231b. The heat transfer medium is stored in the heat transfer medium storage unit 231a. The heat transfer medium includes an inert gas. According to an embodiment, the heat transfer medium comprises helium (He) gas. The helium gas is supplied to the first circulation channel 231 through the supply line 231b and is supplied to the bottom surface of the substrate W through the second supply channel 233 and the supply channel 221 in sequence. The helium gas serves as a medium for assisting heat exchange between the substrate W and the electrostatic chuck 210. Therefore, the temperature of the substrate W becomes uniform throughout.

The second circulation channel 232 is connected to the cooling fluid storage 232a through the cooling fluid supply line 232c. The cooling fluid is stored in the cooling fluid storage part 232a. A cooler 232b may be provided in the cooling fluid storage portion 232a. The cooler 232b cools the cooling fluid to a predetermined temperature. Alternatively, the cooler 232b may be installed on the cooling fluid supply line 232c. The cooling fluid supplied to the second circulation channel 232 through the cooling fluid supply line 232c circulates along the second circulation channel 232 to cool the body 230. The body 230 is cooled and the dielectric plate 220 and the substrate W are cooled together to maintain the substrate W at a predetermined temperature.

The focus ring 240 is disposed in the edge region of the electrostatic chuck 201. The focus ring 240 has a ring shape and is provided to surround the dielectric plate 220. For example, the focus ring 240 is disposed along the periphery of the dielectric plate 220 to support the edge region of the substrate W. The focus ring 240 is provided so that the upper edge region protrudes in a ring shape, thereby inducing the plasma to be concentrated onto the substrate W. [ An insulating plate 250 is disposed under the body 230. The insulating plate 250 is made of an insulating material and electrically insulates the body 230 from the lower cover 270.

The lower cover 270 is located at the lower end of the support unit 200. The lower cover 270 is spaced upwardly from the bottom surface of the housing 110. The lower cover 270 has a space in which an upper surface is opened. The upper surface of the lower cover 270 is covered with an insulating plate 250. The outer radius of the cross section of the lower cover 270 may be provided with a length equal to the outer radius of the insulating plate 250. [ A lift pin module for receiving the substrate W to be conveyed and receiving the substrate W from an external conveying member and placing the substrate W thereon as a supporting plate may be disposed in the inner space of the lower cover 270.

The lower cover 270 has a connecting member 273. The connecting member 273 connects the outer side surface of the lower cover 270 and the inner side wall of the housing 110. A plurality of connecting members 273 may be provided on the outer surface of the lower cover 270 at regular intervals. The connecting member 273 supports the support unit 200 inside the chamber 100. Further, the connecting member 273 is connected to the inner wall of the housing 110, so that the lower cover 270 is electrically grounded. A first power supply line 223c connected to the first lower power supply 223a, a second power supply line 225c connected to the second lower power supply 225a, a heat transfer medium supply line 233b connected to the heat transfer medium storage 231a And a cooling fluid supply line 232c connected to the cooling fluid reservoir 232a extend into the lower cover 270 through the inner space of the connection member 273. [

3 is a cross-sectional view showing the adhesive layer 280 of FIG. 2 and 3, the adhesive layer 280 is positioned between the dielectric plate 220 and the body 230. The adhesive layer 280 fixes the dielectric plate 220 and the body 230 to each other. The adhesive layer 280 includes a first adhesive layer 281 and a second adhesive layer 282.

Fig. 4 is a view showing a part of the adhesive layer 280 of Fig. Referring to FIG. 4, the first adhesive layer 281 includes a first adhesive 281a and a first filler 281b.

The first adhesive 281a is provided with a high-elasticity insulating material. For example, the first adhesive 281a may be provided with silicon (Si).

A plurality of first pillar 281b are provided in the first adhesive 281a. The first filler 281b is provided with a material having a higher thermal conductivity than the first adhesive 281a. The first filler 281b is provided in a shape other than the sphere. According to one embodiment, the first pillar 281b is provided in the shape of a polygonal plate. The first filler 281b is provided so as to be polygonal when viewed from the front. For example, the first filler 281b is provided as a graphite material in the shape of a hexagonal plate. In this case, the first filler 281b is provided to be hexagonal when viewed from the front. The graphite is provided in a hexagonal plate shape as a crystal shape. Graphite shows that the thermal conductivity of heat transmitted along both sides of the hexagonal plate is higher than the thermal conductivity of heat flowing along the direction passing through both surfaces and the thermal conductivity of heat transmitted through the first adhesive 281a. 3, when the first pillar 281b provided with a graphite is arranged, the thermal conductivity of the heat transmitted through the first adhesive 281a in the vertical direction is lower than that of the upper and lower pillar 281b through the first pillar 281b The heat conductivity of the heat transmitted in the direction of high temperature is high.

5 is a view showing a part of the adhesive layer of Fig. 3 according to another embodiment. Referring to FIG. 5, unlike the case of FIG. 4, the first filler 281b may be provided in a cylindrical shape. For example, the first filler 281b is provided as a carbon nanotube material. The first pillar 281b is provided in the vertical direction in the longitudinal direction. Carbon nanotubes (Carbon Nano Tube) are provided in the shape of a cylinder. Carbon Nano Tube has a higher thermal conductivity of heat transmitted along the longitudinal direction than that of heat transmitted along the direction perpendicular to the longitudinal direction and a thermal conductivity of heat transmitted through the first adhesive 281a. Therefore, when the first pillar 281b provided with the carbon nanotube is arranged as shown in FIG. 4, the thermal conductivity of the first pillar 281b is higher than the thermal conductivity of the heat transmitted through the first adhesive 281a in the vertical direction The heat conductivity of the heat transmitted in the vertical direction is high.

The first filler 281b may be provided at different densities for each region of the first adhesive layer 281 when viewed from above. For example, the first filler 281b may be provided at a higher density than the central area of the first adhesive layer 281 in the edge area of the first adhesive layer 281. [ In this case, the first adhesive layer 281 is provided such that the thermal conductivity of the edge region in the up-and-down direction is higher than the thermal conductivity of the central region in the up-and-down direction. Accordingly, it is possible to perform a uniform treatment on the substrate by controlling the thermal conductivity of each region when viewed from the top of the electrostatic chuck 201.

The second adhesive layer 282 is provided so as to be laminated on the first adhesive layer 281. For example, a second adhesive layer 282 may be provided on top of the first adhesive layer 281. The second adhesive layer 282 is provided with a thermal conductivity lower than that of the first adhesive layer 281. [ According to one embodiment, the second adhesive layer 282 includes a second adhesive 282a and a second filler 282b.

The second adhesive 282a is provided with a high-elasticity insulating material. For example, the second adhesive 282a may be provided as silicon (Si).

The second pillar 282b is provided in plurality in the second adhesive 282a. The second pillar 282b is provided with a thermal conductivity lower than that of the first pillar 281b in the vertical direction. For example, the second pillar 282b may be provided as a spherical filler made of a material having a lower thermal conductivity in the up-and-down direction than the first pillar 281b.

Referring again to FIG. 3, the adhesive layer 280 may be provided differently for each region when the ratio of the thickness between the first adhesive layer 281 and the second adhesive layer 282 is viewed from the top. Accordingly, the thermal conductivity of the adhesive layer 280 can be controlled by controlling the ratio of the thickness of the adhesive layer 280 when viewed from above. For example, the first adhesive layer 281 may be provided thicker in the edge region of the adhesive layer 280 than in the central region of the adhesive layer 280, as viewed from above. In this case, the thermal conductivity of the edge region in the up-and-down direction is higher than the central region of the adhesive layer 280. [

6 is a view showing the adhesive layer of FIG. 2 according to another embodiment. Referring to FIG. 6, only the first adhesive layer 281 may be provided in the edge region of the adhesive layer 280. In this case, the thermal conductivity of the edge region in the up-and-down direction is higher than the central region of the adhesive layer 280. [ Alternatively, the central region of the adhesive layer 280 may be provided only in the first adhesive layer 281, and the edge regions may be provided with the first adhesive layer 281 and the second adhesive layer 282 stacked. In this case, the thermal conductivity of the central region in the up-and-down direction is higher than the edge region of the adhesive layer 280. [

When the ratio of the thicknesses between the first adhesive layer 281 and the second adhesive layer 282 is different from region to region as seen from the top, as shown in Fig. 3 or Fig. 4, The density in view can be uniformly provided.

Alternatively, the adhesive layer 280 may be provided uniformly for each region when viewed from the top, the ratio of the thickness between the first adhesive layer 281 and the second adhesive layer 282. In this case, the thermal conductivity of each region viewed from above the adhesive layer 280 can be controlled by the density of the first filler 281b.

Also, unlike the above, the adhesive layer 280 may not be provided with the second adhesive layer 282. [ In this case, the first adhesive layer 281 is provided with the same overall thickness, and the heat transfer rate control for each region, as viewed from above the adhesive layer 280, is controlled by the density of the first filler 281b .

As described above, the adhesive layer 280 is provided in such a manner that the first pillars 281b are provided with a high thermal conductivity along the vertical direction as compared with the materials provided with general adhesives, thereby bonding the body 230 and the dielectric plate 220 The adhesive layer 280 can be thickly provided. Therefore, since the adhesive layer 280 having a higher elasticity than the body 230 and the dielectric plate 220 is provided thicker, the structural reliability problem of the joint surface due to the difference in thermal expansion coefficient between the body 230 and the dielectric plate 220 . Further, since the adhesive layer 280 is provided with a high thermal conductivity, the temperature difference between the substrate W and the cooling member 232 can be set to a large value, thereby improving the cooling efficiency. In addition, by controlling the density of the first filler 281b and / or the ratio of the thickness between the first adhesive layer 281 and the second adhesive layer 282, it is possible to facilitate the heat distribution by region when viewed from above the electrostatic chuck Can be adjusted. Therefore, the substrate processing apparatus according to an embodiment of the present invention can uniformly process the substrate.

The gas supply unit 300 supplies the process gas into the processing space inside the chamber 100. The gas supply unit 300 includes a gas supply nozzle 310, a gas supply line 320, and a gas storage unit 330. The gas supply nozzle 310 is installed at the center of the cover 120. A jetting port is formed on the bottom surface of the gas supply nozzle 310. The injection port is located at the bottom of the cover 120 and supplies the process gas into the chamber 100. The gas supply line 320 connects the gas supply nozzle 310 and the gas storage unit 330. The gas supply line 320 supplies the process gas stored in the gas storage unit 330 to the gas supply nozzle 310. A valve 321 is installed in the gas supply line 320. The valve 321 opens and closes the gas supply line 320 and regulates the flow rate of the process gas supplied through the gas supply line 320.

The plasma source 400 generates a plasma from the process gas supplied in the process space inside the chamber 100. The plasma source 400 is provided outside the processing space of the chamber 100. According to one embodiment, an inductively coupled plasma (ICP) source may be used as the plasma source 400. The plasma source 400 includes an antenna chamber 410, an antenna 420, and a plasma power source 430. The antenna chamber 410 is provided in a cylindrical shape with its bottom opened. The antenna chamber 410 is provided with a space therein. The antenna chamber 410 is provided so as to have a diameter corresponding to the chamber 100. The lower end of the antenna chamber 410 is detachably attached to the cover 120. The antenna 420 is disposed inside the antenna chamber 410. The antenna 420 is provided with a plurality of turns of helical coil, and is connected to the plasma power source 430. The antenna 420 receives power from the plasma power supply 430. The plasma power source 430 may be located outside the chamber 100. The powered antenna 420 may form an electromagnetic field in the processing space of the chamber 100. The process gas is excited into a plasma state by an electromagnetic field.

The exhaust unit 500 is positioned between the inner wall of the housing 110 and the support unit 200. The exhaust unit 500 includes an exhaust plate 510 having a through-hole 511 formed therein. The exhaust plate 510 is provided in an annular ring shape. A plurality of through holes 511 are formed in the exhaust plate 510. The process gas provided in the housing 110 passes through the through holes 511 of the exhaust plate 510 and is exhausted to the exhaust hole 102. The flow of the process gas can be controlled according to the shape of the exhaust plate 510 and the shape of the through holes 511. [

10: substrate processing apparatus W: substrate
100: chamber 200: support unit
201: electrostatic chuck 220: dielectric plate
223: electrostatic electrode 230: body
232: cooling member 280: adhesive layer
281: first adhesive layer 281a: first adhesive
281b: first filler 282: second adhesive layer
282a: second adhesive 282b: second filler
300: gas supply unit 400: plasma source
500: Exhaust unit

Claims (27)

An electrostatic chuck on which a substrate is placed,
A dielectric plate including an electrostatic electrode that adsorbs the substrate with an electrostatic force;
A body located below the dielectric plate and provided with a cooling member for cooling the electrostatic chuck therein; And
And an adhesive layer disposed between the dielectric plate and the body and fixing the dielectric plate and the body,
Wherein the adhesive layer comprises:
And a first adhesive layer including a first adhesive and a plurality of first fillers provided in a shape other than a sphere in the first adhesive. The method according to claim 1,
Wherein the first filler is provided in the shape of a polygonal plate. 3. The method of claim 2,
Wherein the first filler is provided in a hexagonal plate-like graphite material. 3. The method of claim 2,
Wherein the first filler is provided so as to be polygonal when viewed from the front side. The method according to claim 1,
Wherein the first filler is provided in a cylindrical shape. 6. The method of claim 5,
Wherein the first filler is provided as a carbon nanotube material. 6. The method of claim 5,
Wherein the first filler is provided in the longitudinal direction in a vertical direction. 8. The method according to any one of claims 1 to 7,
Wherein the first filler is provided at different densities for each region of the first adhesive layer when viewed from above. 9. The method of claim 8,
Wherein the first filler is provided at an edge area of the first adhesive layer at a density higher than a central area of the first adhesive layer. 8. The method according to any one of claims 1 to 7,
Wherein the adhesive layer is provided so as to be laminated on the first adhesive layer and further comprises a second adhesive layer having a thermal conductivity lower than that of the first adhesive layer. 11. The method of claim 10,
Wherein the second adhesive layer
A second adhesive; And
And a plurality of second fillers in the second adhesive,
Wherein the second filler has a lower thermal conductivity with respect to the vertical direction than the first filler. 12. The method of claim 11,
Wherein the adhesive layer is differently provided for each region when the ratio of the thickness between the first adhesive layer and the second adhesive layer is viewed from the top. 13. The method of claim 12,
Wherein the first adhesive layer is provided thicker in an edge region of the adhesive layer than in a central region of the adhesive layer when viewed from above. 13. The method of claim 12,
Wherein the adhesive layer is provided with a uniform thickness as a whole when viewed from the front side. An apparatus for processing a substrate,
A chamber having a processing space therein;
A support unit disposed in the processing space and having an electrostatic chuck on which a substrate is placed;
A gas supply unit for supplying a process gas into the process space;
And a plasma source for generating a plasma from the process gas in the processing space,
Wherein the electrostatic chuck comprises:
A dielectric plate including an electrostatic electrode that adsorbs the substrate with an electrostatic force;
A body located below the dielectric plate and provided with a cooling member for cooling the electrostatic chuck therein; And
And an adhesive layer disposed between the dielectric plate and the body and fixing the dielectric plate and the body,
Wherein the adhesive layer comprises:
And a first adhesive layer including a first adhesive and a plurality of first fillers provided in a shape other than a sphere in the first adhesive. 16. The method of claim 15,
Wherein the first filler is provided in the shape of a polygonal plate. 17. The method of claim 16,
Wherein the first filler is provided as a hexagonal plate-shaped graphite material. 17. The method of claim 16,
Wherein the first filler is provided so as to be polygonal when viewed from the front side. 16. The method of claim 15,
Wherein the first filler is provided in a cylindrical shape. 20. The method of claim 19,
Wherein the first filler is provided as a carbon nanotube material. 20. The method of claim 19,
Wherein the first filler is provided in the longitudinal direction in a vertical direction. 22. The method according to any one of claims 15 to 21,
Wherein the first filler is provided at different densities for each region of the first adhesive layer when viewed from above. 23. The method of claim 22,
Wherein the first filler is provided at an edge area of the first adhesive layer at a higher density than the central area of the first adhesive layer. 22. The method according to any one of claims 15 to 21,
Wherein the adhesive layer is provided so as to be laminated on the first adhesive layer, and further comprises a second adhesive layer having a thermal conductivity lower than that of the first adhesive layer. 25. The method of claim 24,
Wherein the second adhesive layer
A second adhesive; And
And a plurality of second fillers in the second adhesive,
Wherein the second pillars have lower thermal conductivities with respect to the vertical direction than the first pillars. 16. The method of claim 15,
Wherein the adhesive layer is provided differently for each region when the ratio of the thickness between the first adhesive layer and the second adhesive layer is viewed from the top. 27. The method of claim 26,
Wherein the first adhesive layer is provided thicker in an edge area of the adhesive layer than in a central area of the adhesive layer when viewed from above.
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Family Cites Families (5)

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