KR20170022234A - Apparatus for controlling semiconductor device, and master module thereof - Google Patents

Apparatus for controlling semiconductor device, and master module thereof Download PDF

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Publication number
KR20170022234A
KR20170022234A KR1020150116974A KR20150116974A KR20170022234A KR 20170022234 A KR20170022234 A KR 20170022234A KR 1020150116974 A KR1020150116974 A KR 1020150116974A KR 20150116974 A KR20150116974 A KR 20150116974A KR 20170022234 A KR20170022234 A KR 20170022234A
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South Korea
Prior art keywords
module
signal
band
control signal
control
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KR1020150116974A
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Korean (ko)
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황규한
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(주)와이솔
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Priority to KR1020150116974A priority Critical patent/KR20170022234A/en
Publication of KR20170022234A publication Critical patent/KR20170022234A/en

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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40—Circuits
    • H04B1/54—Circuits using the same frequency for two directions of communication
    • H04B1/58—Hybrid arrangements, i.e. arrangements for transition from single-path two-direction transmission to single-direction transmission on each of two paths or vice versa
    • H04B1/581—Hybrid arrangements, i.e. arrangements for transition from single-path two-direction transmission to single-direction transmission on each of two paths or vice versa using a transformer
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40—Circuits
    • H04B1/44—Transmit/receive switching

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  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
  • Transceivers (AREA)

Abstract

The present invention is connected to at least one band module, a band module, and a control module, which receives an antenna, a reception signal from the antenna, or a transmission signal from the control module and passes a signal corresponding to a predetermined band frequency At least one amplification module for amplifying the reception signal, a reception module for receiving a reception signal from the amplification module or transmitting a transmission signal to the band module, and transmitting the band module or the amplification module through a first control signal or a second control signal, And a master module for receiving the first control signal from the control module and converting the first control signal into a second control signal and controlling the amplification module with a second control signal, Master module.

Description

[0001] The present invention relates to a semiconductor device control apparatus and a master module,

The present invention relates to an antenna and at least one band module for receiving a reception signal from an antenna or receiving a transmission signal from a control module and passing data of a predetermined band frequency, At least one amplifying module for amplifying a credit signal, a receiving module for receiving a receiving signal from the amplifying module, transmitting a transmitting signal to the band module, and controlling the band module or the amplifying module through a first control signal or a second control signal And a master module for receiving the first control signal from the control module and converting the first control signal into the second control signal and controlling the amplification module with the second control signal, .

Smart terminals are becoming popular worldwide, and the proportion of using LTE (Long Term Evolution), a new mobile communication standard since 2011, and the nation are rapidly increasing. In the case of such LTE, various frequencies are allocated to each communication company, and each communication company uses a band that is a corresponding frequency band. For example, the frequency of the B1 band is 1920 to 2170 MHz, that of the B3 band is 1710 to 1880 MHz, the frequency of the B5 band is 814 to 894 MHz, the frequency of the B7 band is 2500 to 2690 MHz, and the frequency of the B8 band is 880 to 960 MHz.

Also, it can be divided into low band, middle band, and high band depending on the frequency. For example, B12 (699 to 746 MHz) is divided into low band, B4 (1710 to 2155 MHz) and B2 (1850 to 1990 MHz) are middle band and B7 A suitable filter or multiplexer may be used.

At this time, since the signal passing through the filter or the multiplexer is weakened in the receiving sensitivity and weakened in intensity, it is necessary to raise the signal to an appropriate size using an amplifying device such as a low noise amplifier (LNA). However, since the number of bands supported by the LTE smartphone continues to increase, the number of amplifiers used in the RF receiving terminal is also increasing, and a method of effectively controlling a plurality of amplifiers existing in the smart terminal has been studied .

In the case of a conventional smart terminal, a parallel type control signal (GPIO) is used to control a plurality of amplifiers. The control signal of the parallel type receives the control signal composed of 0 and 1 and controls the amplifiers in a state where the control module and the plurality of amplifiers are connected. This is the most widely used in amplifier control because it can issue different commands to each amplifier with simple data.

However, as the smart terminal continues to be miniaturized, the number of control signal terminals included in the control module for controlling the amplifiers in the parallel type control signal is limited, but the number of used bands is increased. Therefore, in order to control each of the amplifiers, the respective control signal lines must be connected from the control module to the RF stage, so that the wiring becomes very complicated and unnecessary parts (e.g., ground lines connected to the respective amplifiers) are increased .

On the other hand, in order to overcome the disadvantage of the parallel control signal system, a serial control signal (MIPI) has been researched. The serial control signal is that all the amplifiers are connected in series, so that each amplifier receives the same command. However, unlike the parallel control signal, each amplifier operation signal is stored in the waveform, so that it is possible to effectively control a plurality of amplifiers. However, such a serial-type control signal has a disadvantage in that it is wasted in terms of cost.

The present invention provides a semiconductor device control apparatus including a master module for converting a first control signal into a second control signal and controlling the plurality of amplification modules with the second control signal as described above do.

The technical problem to be solved by the present invention is not limited to the above-mentioned technical problems, and various technical problems can be included within the scope of what is well known to a person skilled in the art from the following description.

According to another aspect of the present invention, there is provided a semiconductor device control apparatus including an antenna, a reception signal received from the antenna, or a transmission signal received from the control module, At least one amplifying module connected between the band module and the control module for amplifying the receiving signal and for receiving the receiving signal from the amplifying module, A control module for transmitting the transmission signal to the band module or the amplification module through a first control signal or a second control signal and a control module for receiving the first control signal from the control module, And a master module for controlling the amplification module with the second control signal. It is gong.

Also, the semiconductor device control apparatus according to an embodiment of the present invention may be configured such that the band module includes at least one of a low band module, a middle band module, and a high band module And the master module is connected to the middle band module.

According to another aspect of the present invention, there is provided a semiconductor device control apparatus including a first switch for selecting a reception signal received from the antenna by the band module, a second switch for receiving the reception signal from the first switch, At least one duplexer for receiving a transmission signal from the control module and passing a signal corresponding to a preset band frequency, and a second switch for selecting a transmission signal received from the control module. In this case, the band module further includes at least one amplifier for amplifying a transmission signal received from the control module and transmitting the amplified transmission signal to the second switch.

The semiconductor device control apparatus according to an embodiment of the present invention may further include a low noise amplifier for amplifying the reception signal, and a filter connected between the low noise amplifier and the control module, . In this case, the filter is a SAW filter.

Also, the semiconductor device control apparatus according to an embodiment of the present invention may further include an RF transceiver for receiving the reception signal from the amplification module or transmitting the transmission signal to the band module, And a base band for controlling the band module or the amplification module through the first control signal or the second control signal. In addition, the control module controls the band module through the first control signal.

In addition, the semiconductor device control apparatus according to an embodiment of the present invention is characterized in that the first control signal is a serial signal and the second control signal is a parallel signal, The signal is a serial signal of a Mobile Industry Processor Interface (MIPI) scheme, and the second control signal is a GPIO (general purpose input / output pin) parallel signal.

Further, the semiconductor device control apparatus according to an embodiment of the present invention may further include: a conversion section for receiving the first control signal and converting the first control signal into a second control signal; Wherein the conversion unit and the amplification module are implemented as a single package.

The master module of the semiconductor device control apparatus according to an embodiment of the present invention is characterized in that the control module transmits the transmission signal to the band module via the amplification module.

Meanwhile, a master module of a semiconductor device control apparatus according to an embodiment of the present invention includes a converter for receiving a first control signal from a control module and converting the received first control signal into a second control signal, And at least one amplification module, and controls the amplification module through the second control signal, wherein the conversion unit and the amplification module are implemented as a single package.

In this case, the master module of the semiconductor device control apparatus according to an embodiment of the present invention is connected to a middle band module, wherein the first control signal is a serial signal of a mobile industry processor interface (MIPI) And the second control signal is a GPIO (general purpose input / output pin) parallel signal. In addition, the master module controls at least one amplification module connected to a band module other than the band module through the second control signal.

In the semiconductor device control apparatus of the present invention, the control module implements a master module separately packaged with an amplification module to control a plurality of amplifiers, and the master module controls each of the plurality of amplifiers through a parallel signal, It is possible to integrate and miniaturize the semiconductor elements without including unnecessary terminals.

In addition, the semiconductor device control apparatus of the present invention can connect the master module to the middle band module and connect the middle band to a middle band commonly used worldwide, so that the compatibility can be easily achieved even if a smart terminal is used in any country in the world .

The semiconductor device control apparatus of the present invention includes a master module for converting a first control signal into a second control signal and controlling the plurality of amplification modules with the converted second control signal so that the size, , It is possible to realize a semiconductor device that is cost-effective.

BRIEF DESCRIPTION OF DRAWINGS FIG. 1 is a configuration diagram showing a semiconductor device control apparatus according to an embodiment of the present invention; FIG.
2 is a circuit diagram showing a semiconductor device control apparatus according to an embodiment of the present invention.
3 is a circuit diagram showing a detailed configuration of a semiconductor device control apparatus according to an embodiment of the present invention.
FIGS. 4A, 4B, and 4C illustrate band and amplification modules of a semiconductor device control apparatus according to an embodiment of the present invention. FIG.
5 is a configuration diagram illustrating a converter included in a master module of a semiconductor device control apparatus according to an embodiment of the present invention.

Hereinafter, a semiconductor device control apparatus according to the present invention will be described in detail with reference to the accompanying drawings. The present invention is not limited to the above-described embodiments, and various changes and modifications may be made without departing from the scope of the present invention. In addition, the matters described in the attached drawings may be different from those actually implemented by the schematic drawings to easily describe the embodiments of the present invention.

In the meantime, each constituent unit described below is only an example for implementing the present invention. Thus, in other implementations of the present invention, other components may be used without departing from the spirit and scope of the present invention.

Also, the expression " comprising " is intended to merely denote that such elements are present as an expression of " open ", and should not be understood to exclude additional elements.

Also, the expressions such as 'first, second', etc. are used only to distinguish between plural configurations, and do not limit the order or other features among the configurations.

The 'power source' of the present invention may include all kinds of electric energy that can be used in a general electric circuit such as 'voltage', 'electric power', 'electric current' and the like.

BRIEF DESCRIPTION OF DRAWINGS FIG. 1 is a configuration diagram showing a semiconductor device control apparatus according to an embodiment of the present invention; FIG.

Referring to FIG. 1, in a conventional semiconductor device control apparatus, a base band 142 controls a plurality of band modules 120 through a serial signal, and controls a plurality of amplification modules 130 through a parallel signal. In this case, when a plurality of amplification modules are controlled, there is a disadvantage that additional terminals corresponding to each of the parallel signals must be added every time the amplification module is extended to the base band 142. In recent years, There has been a problem that the parallel signal terminal must also be increased accordingly.

Because of the problems of integration and miniaturization of the conventional semiconductor device, the maximum number of baseband parallel signal terminals is limited to 5 to 6, and there is a disadvantage that it can not cover all the frequency bands widely used around the world.

FIG. 2 is a circuit diagram showing a semiconductor device control apparatus according to an embodiment of the present invention, and FIG. 3 is a circuit diagram showing a detailed configuration of a semiconductor device control apparatus according to an embodiment of the present invention.

2 and 3, the semiconductor device control apparatus 200 of the present invention includes an antenna 210, a band module 220, an amplification module 230, a control module 240, and a master module 250 can do.

The antenna 210 is an apparatus for sending or receiving electromagnetic waves to / from a space for transmission and reception, and may be used for signal reception or signal transmission. In addition, the antenna may use one antenna or may use a plurality of antennas, such as a high frequency (212) frequency and a mid / low frequency (211) frequency, have.

The band module 220 passes a signal corresponding to a predetermined band frequency to a reception (Rx) signal received from the antenna or a transmission (Tx) signal received from the control module. In this case, the band module may include at least one of a low band module, a middle band module, and a high band module. The high band Modules 223 and 224 and middle / low band modules 221 and 222 connected to middle / low band antennas may be used as one antenna. The bandwidth of such a band module can be set by setting an appropriate bandwidth according to a country and a region where a terminal including a semiconductor device can be used.

In addition, the band module can be implemented using various devices. 4A, the band module 220 may be implemented as a first switch 261, a second switch 262, duplexers 263 and 264, and an amplifier 265, Of filters 266 and 267, respectively.

At this time, the first switch 261 can select a reception signal received from the antenna, and the first switch can operate by receiving a control signal for signal selection. Also, the first switch may be connected to at least one duplexer 263 and 264 to receive a reception signal from the first switch and to pass a signal of a predetermined band frequency. Then, the duplexer can transmit the receiving signal to the amplification module connected to the band module.

On the other hand, when transmitting the transmission signal transmitted from the control module to the outside of the terminal, at least one amplifier receives the transmission signal from the control module, amplifies it, and transmits it to the second switch. The second switch selects a transmission signal and transmits it to at least one duplexer, and can be transmitted to the outside via the antenna according to the selection of the first switch.

The amplification module 230 is connected between the band module 220 and the control module, and can amplify the received signal by low noise amplification or power amplification of the transmission signal. Referring to FIG. 4C, since the receiving signal passing through the duplexer or the filter included in the band module 220 is reduced in size or sensitivity, the receiving signal can be transmitted through the package module of the low noise amplifier (LNA) 271 and the filter 272 The credit signal can be corrected. Also, the amplification module 230 may include a power amplifier, and the power amplifier amplifies the power of a signal transmitted through the antenna.

In this case, when the control module receives the reception signal, the band module may receive the reception signal to the control module via the amplification module, or may receive the reception signal directly from the band module to the control module. Also, when transmitting a transmission signal, the control module may transmit the transmission signal to the band module via the amplification module, or may transmit the direct transmission signal to the band module from the control module. Therefore, the amplification module may be routed or directly connected according to the user's setting or design specification.

A Low Noise Amplifier is implemented to amplify a received signal, amplify a weak signal caught by the antenna in a communication system, and reduce the generated noise. At this time, the amplifier 139 preferably includes an LNA (low noise amplifier) 139. The LNA is a high-frequency amplifier (139) designed to lower the noise figure of the entire receiver, and is used for reception of input voltage such as a communication line with a large visible-wave propagation loss.

The filter 272 is connected between the low noise amplifier 271 and the control module 240 so as to pass only a predetermined frequency band. At this time, it is preferable to use a SAW (Surface Acoustic Wave) filter or a notch filter. The notch filter has characteristics that it is difficult to pass only a specific frequency point, and has a characteristic that it does not pass a very narrow region of the band reject filter (BRF).

Surface acoustic waves are acoustic waves propagating along the surface of an elastic substrate, and acoustic waves are generated from electrical signals as a result of the piezoelectric effect. At this time, the electric field of the acoustic wave is concentrated in the vicinity of the surface of the substrate and can interact with the conduction electrons of other semiconductors lying directly on the surface. In order to minimize the energy loss in the system by physically separating the semiconductor from the substrate, The medium can be selected. A surface acoustic wave filter is a surface acoustic wave filter in which an electronic circuit is replaced with an electromechanical element by utilizing interaction between a surface acoustic wave having such characteristics and a semiconductor conductive electron. The surface acoustic wave filter is applied as an RF or IF filter chip to provide frequency selectivity, and can perform a function of passing a desired frequency and filtering an unnecessary frequency.

The control module 240 may receive the receiving signal from the amplifying module or transmit the transmitting signal to the band module, and may control the band module or the amplifying module through the first control signal or the second control signal. At this time, the control module 240 may include an RF transceiver 241 and a baseband 242.

The RF transceiver 241 may receive a reception signal from the amplification module or transmit a transmission signal to the band module. The transceiver is a transceiver that combines a transmitter and a receiver, and is a module that commonly provides transmission and reception with one or more antennas.

The baseband 242 can control the band module or the amplification module through the first control signal or the second control signal. In this case, the first control signal is a serial signal and the second control signal is a parallel signal. In addition, the first control signal is a serial signal of a mobile industry processor interface (MIPI) method, and the second control signal is a parallel signal of a general purpose input / output pin (GPIO) method.

Meanwhile, the control module can control the band module through the first control signal or the serial MIPI signal, transmit the first control signal to the master module, and effectively control the plurality of amplification modules using the MIPI to GPIO converter .

The master module 250 receives the first control signal from the control module and converts it into a second control signal, and controls the amplification module with the second control signal. For example, when the first control signal is the MIPI signal and the second control signal is the GPIO signal, the control module transmits a MIPI signal including a plurality of amplifier control commands to the master module. Since a signal is stored in the waveform of the serial signal, all of the control commands of the plurality of amplification modules are included in one waveform.

The master module then converts the MIPI signal into a GPIO signal. Parallel signals consist of two signals, 0 and 1, and can be controlled by different parallel signals for each amplification module. Therefore, the master module is connected to all of the plurality of amplification modules as shown in FIG. 3, and each of the plurality of amplification modules can be controlled as a parallel signal through the GPIO signal.

Also, the master module may be implemented as one package including the conversion unit 251 and the amplification modules 233 and 234. At this time, the package size of the Master DBLM as the master module is preferably 2.5 mm x 2.0 mm.

The conversion unit 251 receives the first control signal and converts the first control signal into a second control signal, and may be a MIPI to GPIO converter. Referring to FIG. 5, a specific circuit diagram of the conversion unit of the present invention can be confirmed. Then, the second control signal converted by the conversion unit can control at least one amplification module 233, 234 included in the master module.

In addition, the master module may be connected to the middle band module of the band module, and the amplification module included in the master module may be implemented as the amplification modules 233 and 234 connected to the middle band module. In the case of the middle band, since it is commonly used worldwide, there is an advantage that the terminal can be manufactured most efficiently.

Meanwhile, the master module of the semiconductor device control apparatus of the present invention includes a conversion section for receiving a first control signal from a control module and converting the first control signal into a second control signal, at least one amplification And the amplification module is controlled by the second control signal, and the conversion unit and the amplification module are implemented as a single package.

In this case, the master module is connected to the middle band module. Also, the first control signal is a serial signal of a mobile industry processor interface (MIPI) method, and the second control signal is a parallel signal of a general purpose input / output pin (GPIO) method. In addition, the master module controls at least one amplification module connected to a band module other than the band module through the second control signal.

The embodiments of the present invention described above are disclosed for the purpose of illustration, and the present invention is not limited thereto. It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit and scope of the invention.

110, 210, 211, and 212: antennas
120, 220, 221, 222, 223, 224: a band module
130, 230, 231, 232, 233, 234, 235, 236, 237, 238:
240: Control module
141, 241: RF transceiver
142, 242: base band
250: Master module
251:
261: first switch
262: second switch
263, 263: Duplexer
265: Amplifier
271: Low-Noise Amplifier
272: Filter

Claims (17)

antenna;
At least one band module for passing a signal corresponding to a predetermined band frequency to a reception signal received from the antenna or a transmission signal received from the control module;
At least one amplification module connected between the band module and the control module to amplify the reception signal;
A control module that receives the reception signal from the amplification module, transmits the transmission signal to the band module, and controls the band module or the amplification module through a first control signal or a second control signal;
A master module for receiving the first control signal from the control module and converting the first control signal into the second control signal and controlling the amplification module with the second control signal;
And a semiconductor element.
The method according to claim 1,
The band module comprises:
A low band module, a middle band module, and a high band module.
3. The method of claim 2,
The master module comprises:
And the middle band module is connected to the middle band module.
The method according to claim 1,
The band module comprises:
A first switch for selecting a reception signal received from the antenna;
At least one duplexer for receiving the reception signal from the first switch or receiving a transmission signal from the second switch and passing a signal corresponding to a predetermined band frequency;
A second switch for selecting a transmission signal received from the control module;
And a semiconductor device.
5. The method of claim 4,
The band module comprises:
At least one amplifier for amplifying a transmission signal received from the control module and transmitting the amplified transmission signal to the second switch;
The semiconductor device further comprising:
The method according to claim 1,
Wherein the amplification module comprises:
A low noise amplifier for amplifying the reception signal;
A filter connected between the low noise amplifier and the control module;
And a semiconductor device.
The method according to claim 6,
The filter includes:
Wherein the SAW filter is a SAW filter.
The method according to claim 1,
The control module includes:
An RF transceiver for receiving the reception signal from the amplification module or transmitting the transmission signal to the band module;
A base band for controlling the band module or the amplification module through the first control signal or the second control signal;
And a semiconductor device.
The method according to claim 1,
The control module includes:
And controls the band module through the first control signal.
The method according to claim 1,
Wherein the first control signal is a serial signal and the second control signal is a parallel signal.
11. The method of claim 10,
Wherein the first control signal is a serial signal of a mobile industry processor interface (MIPI) method and the second control signal is a parallel signal of a general purpose input / output pin (GPIO) method.
The method according to claim 1,
The master module comprises:
A converter for receiving the first control signal and converting the first control signal into a second control signal;
At least one amplification module controllable by the converted second control signal;
/ RTI >
Wherein the conversion unit and the amplification module are implemented as a single package.
The method according to claim 1,
The control module includes:
And transmits the transmission signal to the band module via the amplification module.
A converter for receiving a first control signal from the control module and converting the first control signal into a second control signal;
At least one amplifying module for amplifying the receiving signal received from the band module;
/ RTI >
Controls the amplification module through the second control signal,
Wherein the conversion unit and the amplification module are implemented as a single package.
15. The method of claim 14,
The master module comprises:
And a middle band module connected to the middle band module.
15. The method of claim 14,
Wherein the first control signal is a serial signal of a mobile industry processor interface (MIPI) method and the second control signal is a parallel signal of a general purpose input / output pin (GPIO) method. .
15. The method of claim 14,
The master module comprises:
Wherein at least one amplification module connected to a band module other than the band module is controlled through the second control signal.
KR1020150116974A 2015-08-19 2015-08-19 Apparatus for controlling semiconductor device, and master module thereof KR20170022234A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020150116974A KR20170022234A (en) 2015-08-19 2015-08-19 Apparatus for controlling semiconductor device, and master module thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020150116974A KR20170022234A (en) 2015-08-19 2015-08-19 Apparatus for controlling semiconductor device, and master module thereof

Publications (1)

Publication Number Publication Date
KR20170022234A true KR20170022234A (en) 2017-03-02

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