KR20170007556A

KR20170007556A - Evaporation source for multiple deposition

Info

Publication number: KR20170007556A
Application number: KR1020150092900A
Authority: KR
Inventors: 이영종; 황인호
Original assignee: 주식회사 선익시스템
Priority date: 2015-06-30
Filing date: 2015-06-30
Publication date: 2017-01-19

Abstract

According to one aspect of the present invention, the present invention provides an evaporation source for multiple deposition, including: a plurality of dot-type evaporation units which contain a dopant deposition material so that dopant deposition particles are ejected toward a substrate according to heating, and which are arranged to be spaced apart from each other along the width of the substrate; and linear evaporation units which contain a host deposition material so that host evaporation particles are ejected toward the substrate according to heating, and which are arranged between the plurality of dot-type evaporation units so that linear injection nozzles are arranged along the width of the substrate.

Description

Evaporation source for multiple deposition < RTI ID = 0.0 >

The present invention relates to a multi-deposition evaporation source. More particularly, the present invention relates to a multi-deposition evaporation source that can homogenously mix a host deposition material and a dopant deposition material to be deposited on a substrate.

BACKGROUND ART Organic light emitting diodes (OLEDs) are self-light emitting devices that emit light by using an electroluminescent phenomenon that emits light when a current flows through a fluorescent organic compound. A backlight for applying light to a non- Therefore, a lightweight thin flat panel display device can be manufactured.

The organic electroluminescent device comprises an organic thin film such as a hole injecting layer, a hole transporting layer, a light emitting layer, an electron transporting layer, and an electron injecting layer which are the remaining constituent layers except for the anode and the cathode. Lt; / RTI >

In the vacuum thermal deposition method, a substrate is disposed in a vacuum chamber, a shadow mask having a predetermined pattern is aligned on a substrate, heat is applied to an evaporation source containing the organic material, and organic substances sublimated in the evaporation source are evaporated .

On the other hand, host organic materials and dopant organic materials may be simultaneously deposited on a substrate. This is because host organic materials deposited on the substrate emit light, and the emitted light is absorbed by the dopant organic material to emit light again, It is for this reason.

The host organics and the dopant organics are controlled to be deposited on the same area of the substrate while uniformly mixing the organics ejected from the evaporation sources for the host organic compounds and the evaporation sources for the dopant organic compounds. And the evaporation sources for dopant organic compounds are separated from each other, it is difficult to precisely mix the host organic material and the dopant organic material, and it is practically difficult to control the host organic material and the dopant organic material to reach the same region of the substrate.

Korean Patent Laid-Open Publication No. 2013-0010730 (2013.01.29)

The present invention can provide a multi-deposition evaporation source that can physically mix the host deposition material and the dopant deposition material to be deposited on the substrate.

According to an aspect of the present invention, there is provided a method of manufacturing a semiconductor device, comprising: a plurality of spot evaporation units arranged so that dopant deposition materials are accommodated therein and the dopant deposition particles are ejected toward the substrate as they are heated, A linear evaporation unit arranged between the plurality of point evaporation units so that the host deposition material is accommodated and the host deposition particles are ejected toward the substrate upon heating and the linear injection nozzles are arranged along the width of the substrate, A multiple deposition evaporation source is provided.

The plurality of viscous-evaporation units may be disposed at an inclination toward the center of the width of the substrate.

Each of the linear evaporating units may be constituted by a plurality of parallel units.

In each of the plurality of linear evaporation units, different host deposition materials may be accommodated.

The injection directions of the injection nozzles of the plurality of linear evaporating units which are parallel to each other may intersect with each other.

The multi-evaporation evaporation source may further include an angle regulating plate disposed between the linear evaporation units arranged in parallel with each other to define a deposition area of the host evaporation particles reaching the substrate.

Wherein the linear evaporating unit comprises: a transfer tube; a nozzle part coupled to the upper end of the transfer tube so as to communicate with the transfer tube and having a distribution tube having the linear injection nozzle formed along the lengthwise direction; And a crucible coupled to the transfer tube and containing the host deposition material.

The linear spray nozzles may include a plurality of nozzle holes arranged in a linear array, and the spray direction of the plurality of nozzle orifices may be the same as the spray direction of the transfer pipe And may be arranged radially around each of them.

A multi-deposition evaporation source according to an embodiment of the present invention physically mixes a host deposition material and a dopant deposition material homogeneously to be deposited on a substrate.

1 is a plan view of a multi-deposition evaporation source according to an embodiment of the present invention;
2 is a side view of a multi-deposition evaporation source according to an embodiment of the present invention;
3 illustrates deposition of a dopant deposition material in a multi-deposition evaporation source according to an embodiment of the present invention.
4 illustrates deposition of a host deposition material in a multi-deposition evaporation source according to an embodiment of the present invention.
5 is a plan view of a multiple deposition evaporation source according to another embodiment of the present invention.
6 is a side view of a multiple deposition evaporation source according to another embodiment of the present invention.
7 is a view for explaining deposition of a dopant deposition material in a multi-deposition evaporation source according to another embodiment of the present invention.

BRIEF DESCRIPTION OF THE DRAWINGS The present invention is capable of various modifications and various embodiments, and specific embodiments are illustrated in the drawings and described in detail in the detailed description. It is to be understood, however, that the invention is not to be limited to the specific embodiments, but includes all modifications, equivalents, and alternatives falling within the spirit and scope of the invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of a multi-deposition evaporation source according to the present invention will be described in detail with reference to the accompanying drawings, wherein like reference numerals refer to like or corresponding elements, A description thereof will be omitted.

FIG. 1 is a plan view of a multi-evaporation evaporation source according to one embodiment of the present invention, and FIG. 2 is a side view of a multi-evaporation evaporation source according to an embodiment of the present invention. FIG. 3 is a view for explaining deposition of a dopant deposition material in a multi-deposition evaporation source according to an embodiment of the present invention. FIG. 4 is a cross-sectional view illustrating deposition of a host deposition material in a multiple deposition evaporation source according to an embodiment of the present invention. Fig.

1 to 4 show an embodiment in which a substrate 12, a linear evaporation unit 14, a point evaporation unit 16, a transfer pipe 18, a distribution pipe 20, a spray nozzle 21, a nozzle hole 22, The nozzle portion 24, the crucible 26, the angle regulating plate 28, the evaporation particle density distribution 30, and the deposition use zone 32 are shown.

The multiple evaporation evaporation source according to this embodiment includes a plurality of point evaporation units arranged to be spaced apart from each other along the width of the substrate 12 by being filled with the dopant deposition material and spraying the dopant deposition particles toward the substrate 12 upon heating, (16); The host deposition material is accommodated and the host deposition particles are ejected toward the substrate 12 as the heating is carried out so that the linear injection nozzles 21 are arranged between the plurality of viscous evaporation units 16 so as to be arranged along the width of the substrate 12. [ And a linear evaporation unit (14) arranged respectively.

The multi-evaporation evaporation source according to this embodiment is disposed opposite to the substrate 12 and deposits the host deposition material and the dopant deposition material on the substrate 12 in accordance with the relative linear movement of the substrate 12 and the multiple evaporation evaporation sources. Here, 'relative linear movement of the substrate and the multiple evaporation evaporation sources' refers to linear movement of the multiple evaporation evaporation sources relative to the substrate 12, linear movement of the substrate 12 relative to multiple evaporation evaporation sources, ) And the multiple evaporation evaporation source simultaneously.

Hereinafter, the description will be focused on the deposition of the substrate 12 by linearly moving the substrate 12 in the longitudinal direction of the substrate 12 in a state where the multiple deposition evaporation sources are positioned below the substrate 12 do.

The point evaporation unit 16 receives the dopant deposition material and ejects the dopant deposition particles toward the substrate 12 upon heating. The point evaporation units 16 may be arranged to be spaced apart from each other along the width direction of the substrate 12 in pairs. In this embodiment, the two point evaporation units 16 are arranged apart from each other in the width direction of the substrate 12, but as shown in FIGS. 5 and 6, two or more point evaporation units 16 may be spaced apart from each other in the width direction of the substrate. Hereinafter, a multi-evaporation evaporation source including two point evaporation units 16 will be described.

The point evaporation unit 16 may include a crucible 26 in which the dopant deposition material is contained and when the crucible 26 is heated by a heater or the like disposed outside the crucible 26, The dopant-deposited particles generated as the material is vaporized or sublimated may be injected in a dotted pattern through openings or nozzles at the top of the crucible 26.

The density of the dopant deposition particles ejected from one spot evaporation unit 16 is high at the center of the crucible 26 and Gaussian distribution becomes lower toward the outskirts. In this embodiment, the two spot evaporation units 16, Are arranged so as to be spaced apart from each other in the width direction of the substrate 12, the overlapping of the dopant deposition particles ejected from each of the spot evaporation units 16 is made so that the density distribution 30 of "M" .

Thus, in a state in which the distance between the pair of point evaporation units 16 is adjusted so that the dopant-deposited particles ejected from the two point evaporation units 16 are ejected in a gentle "M" -shaped density distribution 30, The region where the density of the dopant deposition particles is relatively constant according to the superposition is set as the deposition use region 32 and the substrate 12 is linearly moved to pass through the predetermined deposition use region 32 so that the substrate 12 has a relatively constant density Lt; / RTI > can be deposited. At this time, the host deposition material ejected from the linear evaporation unit 14 disposed between the two point evaporation units 16 is deposited on the substrate 12 simultaneously with the dopant deposition material.

The linear evaporation unit 14 receives the host deposition material and ejects the host deposition particles towards the substrate 12 upon heating. The linear evaporation unit 14 is disposed between the two point evaporation units 16 so that the linear injection nozzles 21 are arranged along the width of the substrate 12. [

The linear evaporation unit 14 may have a crucible 26 in which the host deposition material is contained and when the crucible 26 is heated by a heater or the like disposed outside the crucible 26, The host deposition particles generated as the evaporation material is vaporized or sublimated are ejected through the linear injection nozzle 21.

The linear injection nozzle 21 is a concept including a linear slit-like shape or a shape in which a plurality of nozzle orifices 22 are linearly arranged. In this embodiment, a plurality of nozzle orifices 22 are linearly arranged in the width direction of the substrate 12.

The linear evaporation unit 14 is disposed opposite the substrate 12 so that the linear injection nozzles 21 formed in the linear evaporation unit 14 are arranged along the width of the substrate 12, The substrate 12 is linearly moved in the longitudinal direction of the substrate 12 to deposit the host deposition material on the entire surface of the substrate 12. [

As described above, a linear evaporation unit 14 is disposed between a pair of point evaporation units 16 spaced apart so that the dopant-deposited particles are ejected in a gentle "M" -shaped density distribution 30, Thereby forming a multi-evaporation evaporation source. When the substrate 12 is linearly moved with respect to the multi-deposition evaporation source configured as described above, the deposition region of the dopant deposition material overlaps the deposition region of the host deposition material in the width direction of the substrate 12, The dopant deposition material and the host deposition material can be deposited while uniformly mixing the deposition particles and the host deposition particles at a predetermined ratio.

When the distance between the two spot evaporation units 16 is long, the dopant-deposited particles have a sharp "M" -shaped density distribution 30, which causes a large deviation in the density distribution 30 of the deposition zone, The separation distance of the evaporation unit 16 may be determined according to the design in consideration of deposition uniformity or mixing ratio of the host deposition material and the dopant deposition material.

As shown in Fig. 2, the two point evaporation units 16 are arranged at the center of the width of the substrate 12 in order to control the density of the dopant deposition particles ejected and mixed in the two point evaporation units 16. [ As shown in Fig.

On the other hand, as shown in Fig. 1, the linear evaporating unit 14 may be constituted by a plurality of units arranged in parallel with each other. It is necessary to simultaneously deposit one dopant deposition material and a plurality of host deposition materials on the substrate 12 as needed, and a plurality of linear evaporation units 14, in which different host deposition materials are accommodated, And two point evaporation units 16 each containing a dopant deposition material are disposed at both ends of the linear evaporation unit 14 in the longitudinal direction of the substrate 12 12) may be moved to simultaneously deposit one dopant deposition material and a plurality of host deposition materials.

In this embodiment, as shown in Fig. 1, two linear evaporation units 14 are arranged in parallel and two point evaporation units 16 are disposed at both ends thereof, respectively, so that one dopant deposition material and two host deposition materials The evaporation source is a multi-deposition evaporation source.

When a plurality of linear evaporation units 14 are arranged, the injection directions of the linear injection nozzles 21 of the respective linear evaporation units 14 are configured to intersect with each other. 4, the injection directions of the injection nozzles 21 cross each other so that the host deposition particles ejected respectively by the two linear evaporation units 14 reach a certain region of the substrate 12. [ Accordingly, the host evaporated particles ejected from the respective linear evaporation units 14 can be deposited on the substrate 12 at a uniform rate while being mixed with each other in the process of reaching the substrate 12.

The angle regulating plate 28 may be disposed between the linear evaporating units 14 so that the host deposition particles ejected respectively from the plurality of linear evaporating units 14 can reach the same area of the substrate 12 at a constant rate. An angle regulating plate 28 is disposed between the linear evaporating units 14 so that the host deposition particles ejected from the plurality of linear evaporating units 14 can reach a certain region at a constant rate, To define the deposition area of the particles.

The linear evaporating unit 14 according to the present embodiment includes a transfer tube 18 and a transfer tube 18 connected to the upper end of the transfer tube 18 so as to communicate with the transfer tube 18, A nozzle unit (24) having a distribution pipe (20) in which a nozzle (21) is formed; And a crucible 26 coupled to the transfer tube 18 and containing the host deposition material.

The transfer pipe 18 is connected to the upper end of the crucible 26 so that the lower end thereof is communicated with the crucible 26 and the transfer pipe 18 is connected to the upper end of the transfer pipe 18 in the lateral direction . On the upper side of the distribution pipe 20, a linear injection nozzle 21 is formed in the longitudinal direction.

The transfer pipe 18 is in the form of a tube having a penetrating portion in the longitudinal direction and can be coupled so that the lower end thereof communicates with the open upper end of the crucible 26. The host deposition particles ejected from the crucible 26 are guided to the distribution pipe 20 through the transfer pipe 18. [

The distribution pipe 20 is in the form of a tube having both ends closed and a hollow portion provided therein and is laterally coupled to the upper end of the transfer pipe 18 so as to communicate with the transfer pipe 18. At the upper end of the distribution pipe 20, a linear injection nozzle 21 is formed in the longitudinal direction.

The crucible 26 is coupled to a transfer tube 18, and a host deposition material is accommodated therein. When the crucible 26 is heated by a heater or the like disposed outside the crucible 26, the host deposition particles generated by vaporization or sublimation of the host deposition material in the crucible 26 are discharged through the delivery pipe 18 And the host deposition particles transferred to the distribution pipe 20 are linearly discharged through the injection nozzle 21 while being diffused into the distribution pipe 20.

2, the conveyance pipes 18 may be coupled to the distribution pipe 20 in pairs, and the crucibles 26 may be coupled to the conveyance pipe 18 in pairs. The evaporated particles ejected from the crucible 26 are diffused over the entire length of the distribution pipe 20 through the transfer pipe 18 and the dispersed evaporated particles must be linearly discharged through the injection nozzle 21. However, When the length of the distribution pipe 20 is increased, the deposition particles are not diffused over the entire length of the distribution pipe 20, so that the deposition particles ejected along the longitudinal direction of the distribution pipe 20 can be ejected unevenly.

Accordingly, a pair of conveyance pipes 18 spaced apart from each other by a predetermined distance is connected to the lower end of the distribution pipe 20, and two conveyance pipes 18 separated from each other by coupling the crucible 26 to each conveyance pipe 18 The host deposition particles can be uniformly diffused in the interior of the distribution pipe 20 by introducing the host deposition particles into the distribution pipe 20. [ At this time, the plurality of nozzle orifices 22 located at the upper portion of each conveyance pipe 18 may be arranged to be inclined radially with respect to the conveyance pipe 18.

FIG. 5 is a plan view of a multi-evaporation evaporation source according to another embodiment of the present invention, and FIG. 6 is a side view of a multi-evaporation evaporation source according to another embodiment of the present invention. 7 is a view for explaining deposition of a dopant deposition material in a multi-deposition evaporation source according to another embodiment of the present invention.

5 to 7 show an embodiment in which the substrate 12, the linear evaporation unit 14, the point evaporation unit 16, the transfer pipe 18, the distribution pipe 20, the injection nozzle 21, the nozzle port 22, A nozzle portion 24, a crucible 26, an evaporation particle density distribution 30, and a deposition utilizing zone 32 are shown.

The width of the substrate 12 is increased as the size of the substrate 12 is increased. In the case where two point evaporation units 16 are arranged in the width direction of the substrate 12 The separation distance of the point evaporation unit 16 is increased.

When the distance of the spot evaporation unit 16 is increased, the dopant-deposited particles have a sharp "M" -shaped density distribution 30, which causes a large deviation in the density distribution 30 of the deposition zone, It is impossible to deposit a uniform dopant deposition material.

In this embodiment, as shown in FIG. 7, in correspondence with the increase in the width of the substrate 12 due to the increase in the size of the substrate 12, the dopant-deposited particles ejected from the adjacent point deposition units are arranged in a gentle "M & A plurality of point evaporation sources are arranged in the width direction of the substrate 12 so as to have the linear evaporation units 14 and 30, respectively. Referring to Figs. 5 and 6, the present embodiment shows a configuration in which two linear evaporation units 14 are disposed in a state in which three point evaporation units 16 are disposed apart from each other.

Each of the linear evaporation units 14 disposed between the point evaporation units 16 may be constituted by a plurality of parallel structures. As described above, it is necessary to simultaneously deposit a plurality of host deposition materials together with a dopant material on the substrate 12, if necessary. A plurality of linear evaporation units 14 containing different host deposition materials are deposited on the substrate 12, The substrate 12 may be moved along the longitudinal direction of the substrate 12 in parallel with the longitudinal direction of the substrate 12 to simultaneously deposit a plurality of host deposition materials together with the dopant deposition material.

5, linear evaporation units 14, which are linearly spaced apart from each other in the width direction of the substrate 12, are provided with the same host deposition material, and linear evaporation units 14 arranged in parallel in the longitudinal direction of the substrate 12 The unit 14 contains different host deposition materials and can simultaneously deposit a plurality of host deposition materials as the substrate 12 is linearly moved in the longitudinal direction of the substrate 12. [

The other constituent elements are the same as those described above, and the description thereof will be omitted.

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the present invention as set forth in the following claims It will be understood that the invention may be modified and varied without departing from the scope of the invention.

Many embodiments other than the above-described embodiments are within the scope of the claims of the present invention.

12: substrate 14: linear evaporation unit
16: point evaporation unit 18: transfer pipe
20: distribution pipe 21: injection nozzle
22: nozzle hole 24: nozzle part
26: Crucible 28: Angle adjustment plate
30: density distribution 32: deposition use zone

Claims

A plurality of point evaporation units arranged so that the dopant evaporation material is accommodated and the dopant evaporation particles are ejected toward the substrate upon heating and are spaced apart from each other along the width of the substrate;
And a linear evaporation unit disposed between the plurality of point evaporation units so that the host deposition material is accommodated and the host deposition particles are ejected toward the substrate upon heating and the linear injection nozzles are disposed along the width of the substrate, Multiple evaporation sources.

The method according to claim 1,
The plurality of point evaporation units may include:
And is disposed at an inclination toward the center of the width of the substrate.

The method according to claim 1,
Wherein each of the linear evaporation units is constituted by a plurality of units arranged in parallel with each other.

The method of claim 3,
Characterized in that in each of said plurality of linear evaporation units which are in parallel to one another, different host deposition materials are accommodated.

The method of claim 3,
Wherein the spraying directions of the spraying nozzles of the plurality of linear evaporating units which are in parallel with each other intersect each other.

The method of claim 3,
Further comprising an angle regulating plate disposed between said linear evaporation units in parallel with each other to define a deposition area of said host evaporation particles reaching said substrate.

The method according to claim 1,
The linear evaporating unit includes:
A nozzle unit having a transfer pipe and a distribution pipe horizontally coupled to an upper end of the transfer pipe so as to communicate with the transfer pipe and having a linear injection nozzle formed along a longitudinal direction thereof;
And a crucible coupled to the transfer tube and containing the host deposition material.

8. The method of claim 7,
Wherein the transfer tubes are coupled to the distribution pipe in pairs,
Wherein the linear injection nozzle includes a plurality of nozzle holes linearly arranged,
Wherein the plurality of nozzle orifices are arranged radially with respect to each of the transfer tubes.