KR20160149402A - Self-Powered Sensor Using Triboelectrification - Google Patents

Self-Powered Sensor Using Triboelectrification Download PDF

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Publication number
KR20160149402A
KR20160149402A KR1020150086296A KR20150086296A KR20160149402A KR 20160149402 A KR20160149402 A KR 20160149402A KR 1020150086296 A KR1020150086296 A KR 1020150086296A KR 20150086296 A KR20150086296 A KR 20150086296A KR 20160149402 A KR20160149402 A KR 20160149402A
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South Korea
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oxide semiconductor
polymer dielectric
self
dielectric layer
substrate
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KR1020150086296A
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Korean (ko)
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백정민
김지현
천진성
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울산과학기술원
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/406—Cells and probes with solid electrolytes
    • G01N27/407—Cells and probes with solid electrolytes for investigating or analysing gases
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/18—Measuring force or stress, in general using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/406—Cells and probes with solid electrolytes
    • G01N27/407—Cells and probes with solid electrolytes for investigating or analysing gases
    • G01N27/4073—Composition or fabrication of the solid electrolyte
    • G01N27/4074—Composition or fabrication of the solid electrolyte for detection of gases other than oxygen
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N1/00—Electrostatic generators or motors using a solid moving electrostatic charge carrier
    • H02N1/04—Friction generators

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  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Molecular Biology (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)

Abstract

A self-powered sensor using static electricity according to the present invention comprises a substrate, which is a lower electrode; A first oxide semiconductor formed in a standing state on a substrate; A second oxide semiconductor which is formed by being heterojunctionally bonded to the terminal portion of the first oxide semiconductor; And an upper electrode in which the first polymer dielectric layer and the second polymer dielectric layer are arranged downward to be in contact with the first oxide semiconductor or the second oxide semiconductor so that a sensor array having various characteristics can be produced by a relatively simple process It is effective.

Description

[0001] Self-Powered Sensor Using Triboelectrification [0002]

The present invention relates to a self-powered sensor using static electricity, and more particularly, to an electrostatic-based small-sized generator using an oxide-based semiconductor material and a non-conductive material such as a polymer dielectric, And a self-powered sensor using the static electricity.

One of the main challenges of wireless sensor networks is the power required for continuous and unpaid operation. Wireless devices need to be self-powered without a battery to greatly improve the adaptability and mobility of the device. Since the sensor can be driven with a small power, energy can be obtained from the environment to supply the self-power. Energy Harvesting Technology from the Environment Technology such as the production of electricity by using solar energy, wind, temperature change, etc. as an energy source. However, most of these technologies are irregular energy sources and are very influenced by the surrounding environment.

For example, the energy hubbing method using sunlight is affected by the weather and the apparatus must be exposed to light, which causes heat due to light exposure.

The problem with the method of harvesting energy using temperature changes is that the effect can only be achieved if the temperature difference between the inside and outside of the energy harvesting device is large. However, since the temperature difference is not large, it is not utilized efficiently.

Korean Registered Patent No. 10-1046985 (June 30, 2011)

In order to solve the above-mentioned problems, the present invention provides a self-powered system using triboelectricity caused by friction or contact generated from contact of an oxide semiconductor with a nonconductor such as a polymer dielectric layer in driving a chemical sensor It is an object of the present invention to provide a self-powered sensor element using a static sensor having high sensitivity and selectivity by implementing a gas sensor array and a polymer dielectric layer array having multiple junctions and catalyst layers using metal oxide nanowires having excellent electrical and chemical sensing characteristics .

According to an aspect of the present invention, there is provided a self-powered sensor using static electricity, comprising: a substrate which is a lower electrode; A first oxide semiconductor formed in a standing state on the substrate; A second oxide semiconductor which is formed at a terminal portion of the first oxide semiconductor by being heterojunctionally formed in a small purchaser shape; And an upper electrode in which the first polymer dielectric layer and the second polymer dielectric layer are arranged downward to be in contact with the first oxide semiconductor or the second oxide semiconductor.

The self-power sensor using the static electricity according to the present invention has an effect of producing a sensor array having various characteristics by manufacturing a junction sensor array and a polymer dielectric layer array using a metal oxide nanowire and performing a relatively simple process.

Further, the self-power source sensor using the static electricity according to the present invention realizes various kinds of junctions by controlling the surface energy of the semiconductor material and the polymer dielectric layer, thereby enabling the use of the gas sensor element having excellent sensitivity and selectivity.

The self-powered sensor using the static electricity according to the present invention can detect not only the toxic gas present in the air but also the stoichiometry such as the kind and the concentration of the chemical such as the volatile organic compound at the room temperature, There is an effect that can be made.

1 is a perspective view of a self-powered sensor using static electricity according to the present invention,
FIG. 2 is a schematic view of an electrostatic self-powered sensor arrangement according to the present invention implemented through control of multiple metal oxide junctions and polymer dielectric layers; FIG.
3 is a scanning electron micrograph of a ZnO nanowire structure and NiO nanoparticle structure according to an embodiment of the present invention,
4 is a result of sensing volatile organic compounds using PTFE as a polymer dielectric layer of a self-powered sensor using static electricity according to the present invention, and FIG.
FIGS. 5 and 6 are views illustrating the sensing of ethanol using a polymer dielectric layer and an oxide semiconductor of a self-powered sensor using static electricity according to the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. Prior to this, terms and words used in the present specification and claims should not be construed to be limited to ordinary or dictionary meanings, and the inventor should properly interpret the concept of the term to describe its own invention in the best way. The present invention should be construed in accordance with the meaning and concept consistent with the technical idea of the present invention.

Therefore, the embodiments described in this specification and the configurations shown in the drawings are merely the most preferred embodiments of the present invention and do not represent all the technical ideas of the present invention. Therefore, It is to be understood that equivalents and modifications are possible.

1 is a perspective view of a self-powered sensor using static electricity according to the present invention.

2 is a schematic diagram of an electrostatic self-powered sensor arrangement in accordance with the present invention implemented through the control of multiple metal oxide junctions and polymer dielectric layers.

1 and 2, a self-powered sensor using static electricity according to the present invention includes a substrate 100 as a lower electrode, a first oxide semiconductor 200, a second oxide semiconductor 300, (400), a second polymer dielectric layer (500), and an upper electrode (600).

The first oxide semiconductor 200, which is formed upright from the substrate 100, is an N-type oxide semiconductor and forms a nanowire array of the self-powered sensor using the static electricity according to the present invention.

The second oxide semiconductor 300 is a p-type oxide semiconductor, and is formed by a heterojunction of the first oxide semiconductor 200 at a terminal portion.

The first oxide semiconductor 200 may be a material such as ZnO, WO 3 , TiO 2 , SnO 2 , ITO, SiO 2 , MgO, etc. The second oxide semiconductor 300 may be NiO, CuO, Cr 2 O 3 , Co 3 O, and the like, but is not limited thereto.

For example, when the first oxide semiconductor 200 is formed of ZnO, the second oxide semiconductor 300 may be formed of NiO, but the present invention is not limited thereto. For example, The combination of the ZnO, WO 3 , TiO 2 , SnO 2 , ITO, SiO 2 and MgO materials of the oxide semiconductor 200 with the NiO, CuO, Cr 2 O 3 and Co 3 O materials of the second oxide semiconductor 300 .

 In addition, the positions of the N-type first oxide semiconductor 200 and the P-type second oxide semiconductor 300 can be changed, and the structure of the N-type oxide semiconductor 200 can be changed variously by using nanoparticles, nanorods, can do.

The first polymer dielectric layer 400 and the second polymer dielectric layer 500 formed below the upper electrode 600 so as to abut the first oxide semiconductor 200 and the second oxide semiconductor 300 are formed by polyformaldehyde Polymeric dielectric layers such as polyamide, wool, silk polymethyl methacrylate, polyvinyl alcohol, polyester, polyisobutylene, polyvinyl butyral, rubber, polystyrene, polystyrene, polyvinyl chloride, polydimethylsiloxane (PDMS) and polytetrafluoroethylene Loses.

The first polymer dielectric layer 400 and the second polymer dielectric layer 500 are formed on the first oxide semiconductor layer 200 and the second oxide semiconductor layer 300 so that current and / Thereby generating a voltage.

In this case, the first polymer dielectric layer 400 and the second polymer dielectric layer 500 are formed by forming a polymeric polymer non-conductive material such as PTFE, Kapton, and PDMS into a film and then attaching a conductive film.

The conductive film may be formed of one layer or a plurality of layers including at least one of Al, Ni, Cr, Pt, Au, Ag, and ITO.

In addition, the first polymer dielectric layer 400 and the second polymer dielectric layer 500 may be formed by attaching a double-sided adhesive tape made of Kapton.

In order to smoothly flow the organic solvent and gas into and out from the interface between the first and second oxide semiconductor layers 200 and 300 and the first and second polymer dielectric layers 400 and 500, And the upper electrode (600).

3 is a scanning electron micrograph of the first oxide semiconductor 200 of the ZnO nanowire structure and the second oxide semiconductor 300 of the NiO nanoparticle structure according to an embodiment of the present invention.

After the ZnO thin film was deposited on the substrate 100 using an RF sputtering method, the substrate 100 on which the ZnO thin film was deposited was placed in an autoclave and an aqueous solution for ZnO formation was formed by hydrothermally synthesizing ZnO The nanowires are synthesized to form the first oxide semiconductor 200.

At this time, the synthesis temperature of ZnO can be performed at 60 to 200 ° C. The aqueous solution for zinc oxide formation may contain a zinc salt and hexamethylenetetramine. The molar ratio of the zinc salt to hexamethylenetetramine may be preferably 2: 1 to 1: 2, and the zinc salt And the hexamethylenetetramine aqueous solution may preferably be maintained at 0.0001M to 1M.

ZnO nanowire was prepared by dissolving 1.4874 g of zinc nitrate powder and 0.7009 g of hexamethylenetetraamine powder in 200 mL of deionized water and adding the solution to the autoclave equipped with a light emitting diode at a molar ratio of 1: Heat treatment was carried out by heat treatment, and then the light emitting diode was taken out and washed with deionized water.

After the ZnO nanorods are formed through the above process, they can be deposited on the surface of the substrate 100 using an e-beam deposition method, and a hetero-junction type nanostructure is formed through a heat treatment process.

Meanwhile, FIG. 4 is a result of sensing a volatile organic compound using PTFE as a polymer dielectric layer of a self-powered sensor using the static electricity according to the present invention.

The change of the open circuit voltage (Voc) due to the inflow of the organic solvent was measured using triboelectricity caused by friction or contact. As shown in FIG. 4, When organic solvent was present, Voc tended to decrease. It can be seen that this tendency is different according to the different surface tension characteristics of the volatile organic compound and the change of the conductivity of the oxide semiconductor.

5 and 6 are views showing the sensing of ethanol using the polymer dielectric layer and the oxide semiconductor of the self-powered sensor using the static electricity according to the present invention.

As shown in FIG. 5 and FIG. 6, most of the organic solvent was used as the solvent, as compared with the case where there was no organic solvent. The decrease of Isc and Voc in the presence of the polymer decreases with the surface energy of the different polymer dielectric layers and the change of the conductivity of the oxide semiconductor.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, It is to be understood that various modifications and changes may be made without departing from the scope of the appended claims.

100: substrate
200: First oxide semiconductor
300: second oxide semiconductor
400: first polymer dielectric layer
500: second polymer dielectric layer
600: upper electrode

Claims (7)

A substrate 100 which is a lower electrode;
A first oxide semiconductor (200) formed on the substrate (100);
A second oxide semiconductor (300) formed at a terminal portion of the first oxide semiconductor (200) by a heterojunction with a small thickness; And
And an upper electrode 600 in which a first polymer dielectric layer 400 and a second polymer dielectric layer 500 are arranged downwardly to contact the first oxide semiconductor 200 or the second oxide semiconductor 300 Wherein said electrostatic sensor is a self-powered sensor.
The method according to claim 1,
The first and second oxide semiconductors (200, 300)
Wherein a difference in current or voltage is generated when an external stimulus or load is applied to the surface.
3. The method of claim 2,
Wherein when a toxic gas or a volatile organic compound is input, the difference between the current or the voltage is changed to detect the toxic gas and the volatile organic compound.
The method of claim 3,
Wherein an empty space is formed between the substrate (100) and the upper electrode (600) for smooth inflow and outflow of toxic gas and volatile organic compounds.
The method according to claim 1,
Wherein the first oxide semiconductor (200) comprises at least one of ZnO, WO 3 , TiO 2 , SnO 2 , ITO, SiO 2 , and MgO.
The method according to claim 1,
Wherein the second oxide semiconductor (300) comprises at least one of NiO, CuO, Cr 2 O 3 , and Co 3 O.
The method according to claim 1,
The first and second polymer dielectric layers (400, 500)
one or more of polytetrafluoroethylene (Teflon), polyvinyl chloride (PVC), polydimethylsiloxane (PDMS), polytetrafluoroethylene (Teflon), polyurethane, Wherein the electrostatic sensor is a self-powered sensor.


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CN108429482A (en) * 2017-02-15 2018-08-21 北京纳米能源与***研究所 Friction nanometer power generator, micro-mechanic sensor and sensor-based system
CN108667339A (en) * 2018-04-25 2018-10-16 东华大学 A kind of fiber base friction nanometer power generator of in-situ polymerization surface modification and its preparation
CN109254039A (en) * 2018-09-14 2019-01-22 青岛农业大学 Self energizing bacterium living beings sensor and its application based on EBFC
CN109264709A (en) * 2018-09-03 2019-01-25 浙江理工大学 A kind of preparation method of the implantable biosensor of graphene oxide modification
CN109540999A (en) * 2018-11-29 2019-03-29 电子科技大学 Wireless and passive self energizing atmospheric environment sensor array and preparation method thereof
CN109540998A (en) * 2018-11-29 2019-03-29 电子科技大学 Gas sensor array and preparation method thereof based on wireless power transmission
CN109540997A (en) * 2018-11-29 2019-03-29 电子科技大学 Self energizing automobile exhaust sensor array based on displacement current and preparation method thereof
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CN110864827A (en) * 2018-08-27 2020-03-06 重庆大学 Friction nanometer power generation sensor array with fabric structure
CN111208170A (en) * 2018-11-21 2020-05-29 中国科学院大连化学物理研究所 Passive ammonia gas sensor based on electron-withdrawing polymer film
CN113395011A (en) * 2021-01-07 2021-09-14 湖州师范学院 Array interweaving type friction nano generator and preparation method thereof
CN114354696A (en) * 2021-11-25 2022-04-15 中国科学院海洋研究所 DNA biosensor driven by friction nano generator and application thereof

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KR101046985B1 (en) 2009-10-20 2011-07-07 국민대학교산학협력단 Method for manufacturing nanocomposite, nanocomposite prepared thereby, multilayer film comprising same and electrochemical sensor using same

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101046985B1 (en) 2009-10-20 2011-07-07 국민대학교산학협력단 Method for manufacturing nanocomposite, nanocomposite prepared thereby, multilayer film comprising same and electrochemical sensor using same

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CN108429482A (en) * 2017-02-15 2018-08-21 北京纳米能源与***研究所 Friction nanometer power generator, micro-mechanic sensor and sensor-based system
CN110174196B (en) * 2018-04-10 2021-05-14 北京纳米能源与***研究所 Self-driven composite sensor for multi-stress sensing
CN110174196A (en) * 2018-04-10 2019-08-27 北京纳米能源与***研究所 The driving compound sensor certainly of more stress sensings
CN108667339A (en) * 2018-04-25 2018-10-16 东华大学 A kind of fiber base friction nanometer power generator of in-situ polymerization surface modification and its preparation
CN110864827A (en) * 2018-08-27 2020-03-06 重庆大学 Friction nanometer power generation sensor array with fabric structure
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CN109264709A (en) * 2018-09-03 2019-01-25 浙江理工大学 A kind of preparation method of the implantable biosensor of graphene oxide modification
CN109264709B (en) * 2018-09-03 2021-08-31 浙江理工大学 Preparation method of graphene oxide modified implantable biosensor
CN109254039A (en) * 2018-09-14 2019-01-22 青岛农业大学 Self energizing bacterium living beings sensor and its application based on EBFC
CN111208170A (en) * 2018-11-21 2020-05-29 中国科学院大连化学物理研究所 Passive ammonia gas sensor based on electron-withdrawing polymer film
CN109540998A (en) * 2018-11-29 2019-03-29 电子科技大学 Gas sensor array and preparation method thereof based on wireless power transmission
CN109567808A (en) * 2018-11-29 2019-04-05 电子科技大学 Self energizing tidal air sensor array and preparation method thereof
CN109540997A (en) * 2018-11-29 2019-03-29 电子科技大学 Self energizing automobile exhaust sensor array based on displacement current and preparation method thereof
CN109567808B (en) * 2018-11-29 2021-07-09 电子科技大学 Self-powered respiratory gas sensor array and preparation method thereof
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CN110057476A (en) * 2019-05-28 2019-07-26 中国科学院上海高等研究院 A kind of multi signal response flexible electronic skin and preparation method thereof
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