KR20160142168A - Solar cell and solar cell panel including the same, and paste composition for electrode of solar cell - Google Patents

Solar cell and solar cell panel including the same, and paste composition for electrode of solar cell Download PDF

Info

Publication number
KR20160142168A
KR20160142168A KR1020150078168A KR20150078168A KR20160142168A KR 20160142168 A KR20160142168 A KR 20160142168A KR 1020150078168 A KR1020150078168 A KR 1020150078168A KR 20150078168 A KR20150078168 A KR 20150078168A KR 20160142168 A KR20160142168 A KR 20160142168A
Authority
KR
South Korea
Prior art keywords
weight
parts
glass frit
solar cell
electrode
Prior art date
Application number
KR1020150078168A
Other languages
Korean (ko)
Inventor
김현종
박상환
조해종
김병수
Original Assignee
엘지전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엘지전자 주식회사 filed Critical 엘지전자 주식회사
Priority to KR1020150078168A priority Critical patent/KR20160142168A/en
Publication of KR20160142168A publication Critical patent/KR20160142168A/en

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/048—Encapsulation of modules
    • H01L31/0481—Encapsulation of modules characterised by the composition of the encapsulation material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)

Abstract

A solar cell according to an embodiment of the present invention comprises: a semiconductor substrate; a conductive region formed on the semiconductor substrate; and an electrode connected to the conductive region. The electrode includes silver (Ag) as a main component and a glass frit. The glass frit contains a main network forming material selected from a group consisting of PbO, Bi2O3, TeO2, and a mixture thereof as a main component that is most abundant in the glass frit, and contains 6 to 12 parts by weight of SiO2, 5 to 12 parts by weight of Al2O3, 3 to 5 parts by weight of ZnO, 2 to 5 parts by weight of an alkali metal oxide, 0 to 2 parts by weight of P2O5 and 0 to 1 part by weight of B2O3.

Description

TECHNICAL FIELD [0001] The present invention relates to a solar cell, a solar cell panel including the same, and a paste composition for an electrode of a solar cell. BACKGROUND ART < RTI ID = 0.0 >

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solar cell, a solar cell panel including the same, and a paste composition for an electrode of a solar cell. More particularly, the present invention relates to a solar cell having improved electrode composition, Soluble paste composition.

With the recent depletion of existing energy sources such as oil and coal, interest in alternative energy to replace them is increasing. Among them, solar cells are attracting attention as a next-generation battery that converts solar energy into electric energy.

In such solar cells, various layers and electrodes can be fabricated by design. However, solar cell efficiency can be determined by the design of these various layers and electrodes. The solar cell is required to be designed to have a high reliability since the photoelectric conversion should be performed in the exposed state for a long period of time in the external environment.

The present invention provides a solar cell capable of improving reliability, a solar cell panel including the same, and an electrode paste composition for a solar cell.

A solar cell according to an embodiment of the present invention includes: a semiconductor substrate; A conductive type region formed in the semiconductor substrate; And an electrode connected to the conductive region. The electrode includes silver (Ag) as a main component and a glass frit. Wherein the glass frit contains as main component the main metal component selected from the group consisting of PbO, Bi 2 O 3 , TeO 2 and mixtures thereof as the main component contained most in the glass frit, and 6 to 12 parts by weight of SiO 2 , 12 parts by weight of Al 2 O 3 , 3 to 5 parts by weight of ZnO, 2 to 5 parts by weight of an alkali metal oxide, 0 to 2 parts by weight of P 2 O 5 and 0 to 1 part by weight of B 2 O 3 .

A solar cell panel according to an embodiment of the present invention includes a solar cell including a photoelectric conversion unit and an electrode connected to the photoelectric conversion unit; A sealing layer surrounding and sealing the solar cell; A front substrate located on the front surface of the solar cell on the sealing layer; And a rear substrate located on the sealing layer and on the rear surface of the solar cell and containing resin as a main component. The electrode includes silver (Ag) as a main component and a glass frit. Wherein the glass frit contains as main component the main metal component selected from the group consisting of PbO, Bi 2 O 3 , TeO 2 and mixtures thereof as the main component contained most in the glass frit, and 6 to 12 parts by weight of SiO 2 , 12 parts by weight of Al 2 O 3 , 3 to 5 parts by weight of ZnO, 2 to 5 parts by weight of an alkali metal oxide, 0 to 2 parts by weight of P 2 O 5 and 0 to 1 part by weight of B 2 O 3 .

The electrode paste composition for a solar cell according to an embodiment of the present invention includes a conductive powder containing silver (Ag); Glass frit; And organic vehicles. Wherein the glass frit contains as main component the main metal component selected from the group consisting of PbO, Bi 2 O 3 , TeO 2 and mixtures thereof as the main component contained most in the glass frit, and 6 to 12 parts by weight of SiO 2 , 12 parts by weight of Al 2 O 3 , 3 to 5 parts by weight of ZnO, 2 to 5 parts by weight of an alkali metal oxide, 0 to 2 parts by weight of P 2 O 5 and 0 to 1 part by weight of B 2 O 3 .

In the present embodiment, the paste composition or the glass frit of the electrode formed therefrom is mainly composed of PbO, Bi 2 O 3 , TeO 2 , or a mixture thereof, which does not increase the firing temperature to a high degree and can be fired. Also, it is possible to improve the moisture resistance, acid resistance and corrosion resistance of the paste composition and the electrode formed thereby by including a material capable of improving moisture resistance, acid resistance, and corrosion resistance and a material capable of degrading. The electrode thus manufactured can be applied to a solar cell and a solar cell panel to improve long-term reliability. In particular, the first and / or second sealing layers comprising a resin as a main component) and / or an ethylene-vinyl acetate copolymer resin are used to significantly improve long-term reliability in a solar cell panel, can do.

1 is an exploded perspective view of a solar cell panel according to an embodiment of the present invention.
2 is a sectional view cut along the line II-II in Fig.
3 is a cross-sectional view of a solar cell according to an embodiment of the present invention.
4 is a plan view of the solar cell shown in Fig.
5 is an electroluminescent (EL) photograph of a solar cell according to an embodiment of the present invention.
6 is an EL photograph of the solar cell according to Comparative Example 1. Fig.
7 is an EL photograph of a solar cell according to Comparative Example 2. Fig.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, it is needless to say that the present invention is not limited to these embodiments and can be modified into various forms.

In the drawings, the same reference numerals are used for the same or similar parts throughout the specification. In the drawings, the thickness, the width, and the like are enlarged or reduced in order to make the description more clear, and the thickness, width, etc. of the present invention are not limited to those shown in the drawings.

Wherever certain parts of the specification are referred to as "comprising ", the description does not exclude other parts and may include other parts, unless specifically stated otherwise. Also, when a portion of a layer, film, region, plate, or the like is referred to as being "on" another portion, it also includes the case where another portion is located in the middle as well as the other portion. When a portion of a layer, film, region, plate, or the like is referred to as being "directly on" another portion, it means that no other portion is located in the middle.

Hereinafter, a solar cell according to an embodiment of the present invention, a solar cell panel including the solar cell, and an electrode paste composition for a solar cell are provided.

FIG. 1 is an exploded perspective view of a solar cell panel according to an embodiment of the present invention, and FIG. 2 is a sectional view cut along a line II-II in FIG.

1 and 2, a solar cell panel 100 according to an embodiment of the present invention includes at least one solar cell 150, a sealing layer 130 surrounding and sealing the solar cell 150, A rear substrate 120 disposed on the sealing layer 130 on the rear surface of the solar cell 150 and containing resin as a main component and a front substrate 120 disposed on the front surface of the solar cell 150 on the sealing layer 130. [ And may include a substrate 110. In this embodiment, the electrodes (reference numerals 42 and 44 in FIG. 3) included in the solar cell 150 have a specific composition, so that the reliability of the solar cell panel 100 can be improved. This will be explained in more detail.

First, the solar cell 150 includes a photoelectric conversion unit for converting solar energy into electric energy, and an electrode electrically connected to the photoelectric conversion unit. In this embodiment, a photoelectric conversion portion including a semiconductor substrate (for example, a silicon wafer) and a conductive type region can be applied as an example. The solar cell 150 according to this embodiment will be described later in detail with reference to FIGS. 3 and 4. FIG.

A plurality of solar cells 150 may be provided in the solar cell panel 100 and a plurality of solar cells 150 may be electrically connected in series, in parallel, or in series and in parallel by a ribbon 142. 3) formed on the rear surface of another solar cell 150 adjacent to the first electrode (reference numeral 42 in FIG. 3) formed on the front surface of the solar cell 150, 44 can be connected by a tabbing process. The tableting process is performed by applying a flux to the electrodes 42 and 44 of the solar cell 150 and positioning the ribbon 142 on the electrodes 42 and 44 to which the flux is applied and then performing a firing process . The flux is intended to remove the oxide film which interferes with the soldering, and is not necessarily included.

Alternatively, a conductive film (not shown) may be attached between the solar cell 150 and the ribbon 142, and then a plurality of solar cells 150 may be connected in series or in parallel by thermocompression bonding. The conductive film (not shown) may be formed by dispersing electrically conductive particles formed of gold, silver, nickel, copper or the like having excellent conductivity in a film formed of an epoxy resin, an acrylic resin, a polyimide resin, a polycarbonate resin or the like. When the conductive film is compressed while being heated, the conductive particles are exposed to the outside of the film, and the solar cell 150 and the ribbon 142 can be electrically connected by the exposed conductive particles. When a plurality of solar cells 150 are modularized by a conductive film (not shown), the process temperature can be lowered, and warping of the solar cell 150 can be prevented.

The bus ribbon 145 alternately connects both ends of the ribbon 142 of the solar cell 150 (i.e., the solar cell string) in one row connected by the ribbon 142. The bus ribbons 145 may be arranged in the direction intersecting the ends of the solar cells 150 forming one row. The bus ribbon 145 may be connected to a junction box (not shown) that collects electricity generated by the solar cell 150 and prevents electricity from flowing backward.

However, the present invention is not limited thereto, and the connection structure between the solar cells 150, the connection structure between the solar cell 150 and the outside may be variously modified. Also, it is possible that the solar cell panel 100 is composed of one solar cell 150 without a plurality of solar cells 150.

The sealing layer 130 may include a first sealing layer 131 positioned on the front surface of the solar cell 150 and a second sealing layer 132 positioned on the rear surface of the solar cell 150. The first sealing layer 131 and the second sealing layer 132 block water or oxygen which may adversely affect the solar cell 150 and allow the respective elements of the solar cell panel 100 to chemically bond do. A lamination process for applying heat and / or pressure while sequentially placing the rear substrate 120, the second sealing layer 132, the solar cell 150, the first sealing layer 131, and the front substrate 110 in this order The solar cell panel 100 can be integrated.

The first sealing layer 131 and the second sealing layer 132 may be made of a resin having optical transparency and capable of acting as described above. For example, the first sealing layer 131 or the second sealing layer 132 may be an ethylene-vinyl acetate copolymer resin (EVA), a polyvinyl butyral, a silicon resin, an ester resin, an olefin resin, or the like. In particular, the first sealing layer 131 or the second sealing layer 132 is composed of an ethylene-vinyl acetate copolymer resin, which can reduce material costs and have excellent properties. However, the present invention is not limited thereto. Accordingly, the first and second sealing layers 131 and 132 may be formed by a method other than lamination using various materials other than the above-described materials.

The front substrate 110 is positioned on the first sealing layer 131 to constitute a front surface of the solar cell panel 100. The front substrate 110 may be made of a material having a strength capable of protecting the solar cell 150 from an external impact or the like and a material having optical transparency capable of transmitting light such as sunlight. For example, the front substrate 110 may be formed of a glass substrate or the like. At this time, the front substrate 110 may be formed of a tempered glass substrate so as to improve the strength, or various other materials may be added to improve various other characteristics. Alternatively, the front substrate 110 may be a sheet or a film made of resin or the like. That is, the present invention is not limited to the material of the front substrate 110, and the front substrate 110 may be formed of various materials.

The rear substrate 120 protects the solar cell 150 from the rear surface of the solar cell 150 and can perform various functions such as waterproofing, insulation, and ultraviolet shielding.

The rear substrate 120 may have a strength to protect the solar cell 150 from an external shock or the like and may have a property of transmitting or reflecting light according to a desired structure of the solar cell panel 100. For example, in the structure in which light is incident through the rear substrate 120, the rear substrate 120 may have a light-transmitting material, and in the structure in which light is not incident through the rear substrate 120, Non-transmissive material or reflective material. For example, the rear substrate 120 may be formed in the form of a substrate or a film or a sheet. For example, the back substrate 120 may be a back sheet containing resin as a base material. When the resin is included as the base material, the material cost, weight, and the like can be reduced. For example, the rear substrate 120 may be a TPD (Tedlar / PET / Tedlar) type or a polyvinylidene fluoride (PVDF) resin formed on at least one side of a polyethylene terephthalate (PET). Poly (vinylidene fluoride) is a polymer having a structure of (CH 2 CF 2 ) n and has a double fluorine molecular structure, and therefore has excellent mechanical properties, weather resistance, and ultraviolet ray resistance. The present invention is not limited to the material of the rear substrate 120 and the like.

Hereinafter, a solar cell 150 according to an embodiment of the present invention will be described in detail with reference to FIGS. 3 and 4. FIG.

FIG. 3 is a cross-sectional view of a solar cell according to an embodiment of the present invention, and FIG. 4 is a plan view of the solar cell shown in FIG. In FIG. 4, the semiconductor substrate 152 and the first and second electrodes 42 and 44 are mainly shown.

3, a solar cell 150 according to the present embodiment includes a semiconductor substrate 152 including a base region 10, conductive regions 20 and 30, a base region 10 and / Or electrodes 42, 44 connected to the conductive regions 20, 30. The conductive regions 20 and 30 include a first conductive type region 20 having a first conductive type and a second conductive type region 30 having a second conductive type. The first electrode 42 is electrically connected to the first conductive type region 20 and the second electrode 44 is electrically connected to the base region 10 or the second conductive type region 30. Here, the terms first and second are used for distinguishing each other, and the present invention is not limited thereto. Further, the passivation films 22 and 32, the antireflection film 24, and the like may be further formed. This will be explained in more detail.

The semiconductor substrate 152 may include the conductive regions 20 and 30 and the base region 10 where the conductive regions 20 and 30 are not formed.

In this embodiment, the semiconductor substrate 152 may be composed of a crystalline semiconductor. In one example, the semiconductor substrate 152 may be composed of a single crystal or polycrystalline semiconductor (e.g., single crystal or polycrystalline silicon). In particular, the semiconductor substrate 152 may be comprised of a single crystal semiconductor (e.g., a single crystal semiconductor wafer, more specifically a semiconductor silicon wafer). When the semiconductor substrate 152 is included, the solar cell 150 constitutes a crystalline semiconductor (for example, a single crystal semiconductor, for example, a single crystal silicon) solar cell. Since the crystalline semiconductor solar cell is based on the semiconductor substrate 152 having high crystallinity and few defects, the electrical characteristics are excellent.

In this embodiment, the base region 10 and the conductive regions 20 and 30, which constitute part of the semiconductor substrate 152, can be defined by dopants included therein. For example, in a semiconductor substrate 152, a region including a first conductive type dopant and having a first conductivity type is defined as a first conductive type region 20, and a second conductive type dopant is included at a low doping concentration A region having a second conductivity type is defined as a base region 10 and a region having a second conductivity type is doped with a doping concentration higher than that of the base region 10 by a second conductivity type dopant ). ≪ / RTI > That is, the base region 10 and the conductive regions 20 and 30 are regions having a crystal structure of the semiconductor substrate 152 and different conductivity types and doping densities.

In the present embodiment, the conductive regions 20 and 30 are formed by doping the semiconductor substrate 152 with a dopant to form a doped region constituting a part of the semiconductor substrate 152. However, the present invention is not limited thereto. Therefore, at least one of the first conductive type region 20 and the second conductive type region 30 may be formed of an amorphous, microcrystalline or polycrystalline semiconductor layer formed of a separate layer on the semiconductor substrate 152, or the like. Other variations are possible.

The first conductivity type dopant included in the first conductivity type region 20 may be an n type or a p type dopant and the second conductivity type dopant included in the base region 10 and the second conductivity type region 30 May be a p-type or n-type dopant having a conductivity type opposite to the first conductivity type of the first conductivity type region 20. As the p-type dopant, a group III element such as boron (B), aluminum (Al), gallium (Ga), and indium (In), which are group III elements, Group 5 elements such as arsenic (As), bismuth (Bi), and antimony (Sb) may be used. The second conductive dopant in the base region 10 and the second conductive dopant in the second conductive type region 30 may be the same material or different materials.

For example, the first conductivity type region 20 may have a p-type, the base region 10 and the second conductivity type region 30 may have an n-type. When the pn junction formed by the first conductive type region 20 and the base region 10 is irradiated with light, electrons generated by the photoelectric effect move toward the rear side of the semiconductor substrate 152, And the holes move toward the front surface of the semiconductor substrate 152 and are collected by the first electrode 42. [ Thereby, electric energy is generated. Then, the hole having a slower moving speed than the electron moves to the front surface of the semiconductor substrate 152, not the rear surface, so that the conversion efficiency can be improved. However, the present invention is not limited thereto, and it is also possible that the base region 10 and the second conductivity type region 30 have a p-type and the first conductivity type region 20 has an n-type.

The front surface and / or the rear surface of the semiconductor substrate 152 may be textured to have irregularities having inclined surfaces (inclined surfaces to the front substrate 110 or the rear substrate 120) on the outer surface. At this time, the inclined surface of the concavo-convex can be made of a specific surface (for example, (111) surface of silicon) of the semiconductor substrate 152, and the surface irregularity can have a pyramid shape having (111) surface as the outer surface. When the irregularities due to texturing are positioned on the front surface of the semiconductor substrate 152 as described above, the reflectance of light incident through the front surface or the like of the semiconductor substrate 152 can be reduced. Accordingly, the amount of light reaching the pn junction formed at the interface between the base region 10 and the first conductive type region 20 can be increased, and the light loss can be minimized. However, the present invention is not limited to this, and it is also possible that the irregularities due to texturing are not formed on the front surface and the rear surface of the semiconductor substrate 152.

A first conductive type region 20 may be formed on the front side of the semiconductor substrate 152 and a second conductive type region 30 may be formed on the rear side of the semiconductor substrate 152. Thus, the first conductive type region 20 and the second conductive type region 30 can be positioned with the base region 30 therebetween. However, the present invention is not limited thereto, and the arrangement of the base region 10, the first conductivity type region 20, and the second conductivity type region 30 may be variously modified.

The first conductivity type region 20 may form an emitter region that forms a pn junction with the base region 10. [ The second conductive type region 30 may form a back electric field region forming a back surface field. The rear electric field area serves to prevent carriers from being lost by recombination on the surface of the semiconductor substrate 110 (more precisely, the rear surface of the semiconductor substrate 110).

In this embodiment, the first conductive type region 20 and the second conductive type region 30 have a homogeneous structure having a uniform doping concentration as a whole. However, the present invention is not limited thereto. Thus, in another embodiment, at least one of the first conductive type region 20 and the second conductive type region 30 may have a selective structure. In the selective structure, it is possible to have a high doping concentration and a low resistance in the portions adjacent to the electrodes 42 and 44 among the conductive type regions 20 and 30, and a low doping concentration and a high resistance in other portions. In yet another embodiment, the second conductivity type region 30 may have a local structure. In the local structure, the second conductivity type region 30 may be locally formed corresponding to the portion where the second electrode 44 is formed.

On the surface of the semiconductor substrate 152, an insulating film such as passivation films 22 and 32 and an antireflection film 24 may be formed. Such an insulating film may be composed of an undoped insulating film which does not contain a dopant separately.

More specifically, a passivation film 22 is formed (e.g., in contact) on the front surface of the semiconductor substrate 152, more precisely on the first conductive type region 20 formed on the semiconductor substrate 152, The antireflection film 24 may be formed (e.g., contacted) on the substrate 22. The passivation film 32 may be formed on the rear surface of the semiconductor substrate 152, more precisely on the second conductive type region 30 formed on the semiconductor substrate 152.

The passivation film 22 and the antireflection film 24 are formed on the entire front surface of the semiconductor substrate 152 except for the portion corresponding to the first electrode 42 (more precisely, the portion where the first opening portion 102 is formed) As shown in FIG. Similarly, the passivation film 32 is formed substantially on the entire rear surface of the semiconductor substrate 152 except for the portion corresponding to the second electrode 44 (more precisely, the portion where the second opening 104 is formed) .

Passivation films 22 and 32 are formed in contact with the second conductivity type regions 20 and 30 to passivate defects present in the surface or bulk of the conductive type regions 20 and 30. Accordingly, it is possible to increase the open-circuit voltage (Voc) of the solar cell 150 by removing recombination sites of the minority carriers. The antireflection film 24 reduces the reflectivity of light incident on the front surface of the semiconductor substrate 152. The amount of light reaching the pn junction formed at the interface between the base region 10 and the first conductivity type region 20 can be increased by lowering the reflectance of light incident through the entire surface of the semiconductor substrate 152. [ Accordingly, the short circuit current Isc of the solar cell 150 can be increased. In this way, the efficiency of the solar cell 150 can be improved by increasing the open-circuit voltage and the short-circuit current of the solar cell 150 by the passivation films 32 and 22 and the anti-reflection film 24.

For example, the passivation films 22 and 32 or the antireflection film 24 may be formed of any one selected from the group consisting of a silicon nitride film, a silicon nitride film including hydrogen, a silicon oxide film, a silicon oxynitride film, an aluminum oxide film, MgF2, ZnS, TiO2, Or a multilayer film structure in which two or more films are combined. For example, the passivation films 22 and 32 may include a silicon oxide film, a silicon nitride film, or the like having a fixed positive charge when the conductive type regions 20 and 30 have an n type, An aluminum oxide film having a negative charge, and the like. In one example, the antireflective film 24 may comprise silicon nitride.

However, the present invention is not limited thereto, and the passivation films 22 and 32 and the anti-reflection film 24 may include various materials. The laminated structure of the insulating film stacked on the front surface and / or the rear surface of the semiconductor substrate 152 can also be variously modified. For example, the insulating film may be stacked in a stacking order different from the stacking order described above. Alternatively, at least one of the passivation films 22 and 32 and the antireflection film 24 described above may not be provided, or an insulating film other than the passivation films 22 and 32 and the antireflection film 24 may be provided. Other variations are possible.

The first electrode 42 is electrically connected to the first conductive type region (not shown) through the first opening 102 formed in the insulating film (for example, the passivation film 22 and the antireflection film 24) 20, respectively. The second electrode 44 is electrically connected to the second conductive type region 30 through the second opening 104 formed in the insulating film (for example, the passivation film 32) located on the rear surface of the semiconductor substrate 152 do. For example, the first electrode 42 may contact the first conductivity type region 20 and the second electrode 44 may contact the second conductivity type region 30.

The first and second electrodes 42 and 44 may be formed of various materials (for example, a metal material) and may have various shapes. The shapes of the first and second electrodes 42 and 44 will be described with reference to FIG.

Referring to FIG. 4, the first and second electrodes 42 and 44 may include a plurality of finger electrodes 42a and 44a spaced apart from each other with a predetermined pitch. Although the finger electrodes 42a and 44a are parallel to each other and parallel to the edge of the semiconductor substrate 152, the present invention is not limited thereto. The first and second electrodes 42 and 44 may include bus bar electrodes 42b and 44b formed in a direction crossing the finger electrodes 42a and 44a to connect the finger electrodes 42a and 44a. have. Only one bus electrode 42b or 44b may be provided or a plurality of bus electrodes 42b and 44b may be provided with a larger pitch than the pitch of the finger electrodes 42a and 44a as shown in FIG. At this time, the width of the bus bar electrodes 42b and 44b may be larger than the width of the finger electrodes 42a and 44a, but the present invention is not limited thereto and may have the same or small width.

The finger electrode 42a and the bus bar electrode 42b of the first electrode 42 may all be formed through the passivation film 22 and the antireflection film 24 as viewed in cross section. That is, the opening 102 may be formed corresponding to both the finger electrode 42a of the first electrode 42 and the bus bar electrode 42b. The finger electrode 44a and the bus bar electrode 44b of the second electrode 44 may all be formed through the passivation film 32. [ That is, the opening 104 may be formed corresponding to both the finger electrode 44a and the bus bar electrode 44b of the second electrode 44. [ However, the present invention is not limited thereto. As another example, the finger electrode 42a of the first electrode 42 is formed to pass through the passivation film 22 and the antireflection film 24, and the bus bar electrode 42b is formed through the passivation film 22 and the antireflection film 24 As shown in FIG. A finger electrode 44a of the second electrode 44 may be formed through the passivation film 32 and a bus bar electrode 44b may be formed on the passivation film 32. [

Since the first and second electrodes 42 and 44 of the solar cell 150 have a certain pattern and the solar cell 150 can receive light from the front and back sides of the semiconductor substrate 152, Bi-facial structure. Accordingly, the amount of light used in the solar cell 150 can be increased to contribute to the efficiency improvement of the solar cell 150.

In the drawing, the first electrode 42 and the second electrode 44 have the same shape. The width and pitch of the finger electrode and the bus bar electrode of the first electrode 42 are not limited to the width and pitch of the finger electrode 44a and the bus bar electrode 44b of the second electrode 44, Pitch, and the like. The shapes of the first electrode 42 and the second electrode 44 may be different from each other, and various other modifications are possible. For example, the second electrode 44 may be formed entirely on the rear surface of the semiconductor substrate 152 without a pattern.

In the above description, an example of the solar cell 150 has been described with reference to Figs. 3 and 4. Fig. However, the present invention is not limited thereto, and the structure, mode, etc. of the solar cell 150 may be variously modified. For example, the solar cell 150 may be a photoelectric conversion unit having various structures such as using a compound semiconductor or using a dye sensitized material.

In this embodiment, the electrodes 42 and 44 of the solar cell 150 may include a metal (particularly, silver (Ag)) as a main component. Herein, the term 'main component' may mean a substance which is basically the most included in the whole, and may include, for example, a substance including 50 parts by weight or more based on 100 parts by weight of the total. By using the electrodes 42 and 44 mainly composed of metal (in particular, silver) as described above, it is possible to obtain excellent electrical conductivity and to improve the efficiency of the solar cell 150. However, when it is applied to the solar cell panel 100, it is possible to use a long time period (for example, a high temperature and a high humidity environment, for example, a temperature of 60 ° C or higher and a humidity of 60% If exposed, it can corrode by moisture. This may lower the filling density of the solar cell 150, thereby lowering the efficiency of the solar cell 150 and the output of the solar cell panel 100. Particularly, when the rear substrate 120 includes a resin as a main component, there is a limit in preventing moisture from moving to the solar cell 150 by the rear substrate 120 when the substrate is exposed to a high temperature and high humidity environment for a long time. Problems may appear. And the first or second sealing layers 131 and 132 are inexpensive and have excellent properties, an ethylene vinyl acetate copolymer resin may be used. In consideration of this, according to the present invention, the compositions of the electrodes (42, 44) are improved to improve the reliability in a long time exposure in an external environment such as a high temperature and high humidity environment. This will be explained in more detail.

The electrodes 42 and 44 according to the present embodiment may be formed by applying an electrode paste composition (hereinafter referred to as a paste composition) of the solar cell 150 containing silver, followed by firing. In particular, among the electrodes 42 and 44, the finger electrodes 42a and 44a, which directly contact the conductive regions 20 and 30 to collect carriers, can be formed using a paste composition to be described later. This improves the moisture resistance and corrosion resistance of the finger electrodes 42a and 44a, which are located entirely in the solar cell 150 and are in contact with the conductive regions 20 and 30 through the first and second openings 102 and 104 can do. In addition, the bus bar electrodes 42a and 44a of the electrodes 42 and 44 can be formed using a paste composition to be described later.

Hereinafter, a paste composition containing silver will be described, and electrodes 42 and 44 formed by applying and firing the same will be described in detail.

The paste composition according to this embodiment may further include a conductive powder, a glass frit, an organic vehicle, and other additives.

The conductive powder may comprise a metal, for example, silver. Silver has excellent electrical conductivity and is excellent in adhesion with the ribbon 142, thereby improving the efficiency of the solar cell 150 and improving the output of the solar cell panel 100.

In the present embodiment, the conductive powder may be contained in an amount of 70 to 90 parts by weight based on 100 parts by weight of the total paste composition. Thus, the electrodes 42 and 44 formed using the paste composition including the conductive powder as a main component can have excellent electrical conductivity. If the conductive powder contains less than 70 parts by weight, the electrical conductivity of the electrodes 42, 44 may not be sufficient. If the amount of the conductive powder exceeds 90 parts by weight, the content of other materials constituting the paste composition may be reduced, and the adhesion property with the semiconductor substrate 152 may be deteriorated. For example, the conductive powder may be included in an amount of 80 to 90 parts by weight based on 100 parts by weight of the paste composition, so that the electrodes 42 and 44 have sufficient electrical conductivity. However, the present invention is not limited thereto, and the content of the conductive powder may have a different value.

Such conductive powder may have various shapes such as spherical or non-spherical (plate, vertical or flake). As the conductive powder, single particles may be used, or particles having different particle diameters may be mixed and used.

In this embodiment, the glass frit may have a composition capable of improving corrosion resistance and moisture resistance.

The glass frit consists of an oxygen polyhedron with a random network structure containing oxygen. At this time, the glass frit includes a network former, and may include a network modifier, an intermediate, and other materials. The network forming material plays a role in forming a mesh structure. The network deformable material cuts the mesh structure and lowers the firing temperature. And the intermediate material sometimes acts as a network agent or a mesh tissue modification, but can not form glass frit alone.

More specifically, the glass frit may include a main networking material selected from the group consisting of PbO, Bi 2 O 3 , TeO 2 , and mixtures thereof. That is, the glass frit can contain the main networking material in the largest amount of the vitreous frit than other materials. Accordingly, the glass frit may be a PbO-based, Bi 2 O 3 -based, TeO 2 -based, PbO-Bi 2 O 3 -based, Bi 2 O 3 -TeO 2 -based, PbO-TeO 2 -based or PbO-Bi 2 O 3 -TeO 2 system or the like.

Such a main networking material is a kind of network forming material and can play a role of forming a network structure of glass frit. The mesh-forming material plays a role in forming the network structure, but it can increase the sintering temperature. PbO, Bi 2 O 3 and / or TeO 2 are included as main components because they increase the sintering temperature. Further, the above-mentioned material can penetrate the insulating film by fire-through during firing. Thereby, if the paste composition is applied on the insulating films (i.e., the passivation films 22 and 32 and the antireflection film 24) where the first and second openings 102 and 104 are not formed and then baked, The first and second openings 102 and 104 are formed. As a result, the electrodes 42 and 44 are fired in contact with the conductive regions 20 and 30. Accordingly, it is not necessary to provide a separate patterning process for forming the first and second openings 102 and 104, thereby simplifying the manufacturing process.

The glass frit may contain the above-mentioned main network forming material in the remainder (the remainder) in addition to other oxides to be described later. As one example, 40 to 80 parts by weight (for example, 50 to 70 parts by weight) of the main network forming material containing at least one of PbO, Bi 2 O 3 , and TeO 2 may be included in 100 parts by weight of the total glass frit . If the main network forming material is contained in an amount of less than 40 parts by weight based on 100 parts by weight of the total glass frit, the network structure may be difficult to form or the firing temperature may be increased by other network forming materials. If the main network forming material is contained in excess of 80 parts by weight with respect to 100 parts by weight of the total glass frit, the firing temperature may exceed a certain level by a large amount. The formation of the network structure, the firing temperature and the like, the main network forming material may be 50 to 70 parts by weight based on 100 parts by weight of the glass frit as a whole. However, the present invention is not limited thereto, and the content of the main network forming material may have different values.

6 to 12 parts by weight of SiO 2 , 5 to 12 parts by weight of Al 2 O 3 , 3 to 5 parts by weight of ZnO, 2 to 5 parts by weight of an alkali metal oxide, 0 to 2 parts by weight of P 2 O 5 , 0 to 1 part by weight of B 2 O 3 , 2 parts by weight or less of Co 3 O 4 , 1 part by weight of MnO 2 , 1 part by weight of TiO 2 , 5 parts by weight or less of V 2 O 5 And may include at least one. However, the present invention is not limited thereto, and it is also possible that Co 3 O 4 , MnO 2 , TiO 2 , and V 2 O 5 are not included.

SiO 2 is one of the network forming materials, which can effectively form a network structure, and is excellent in moisture resistance, acid resistance and corrosion resistance. Accordingly, the glass frit essentially contains SiO 2 , effectively forming a network structure, and can improve the moisture resistance, acid resistance, and corrosion resistance of the paste composition and electrodes 42 and 44 formed using the same.

At this time, if SiO 2 is contained in an amount of less than 6 parts by weight based on 100 parts by weight of the entire glass frit, formation of a network structure by SiO 2 and an effect of improving moisture resistance, acid resistance and corrosion resistance may not be sufficient. If SiO 2 is contained in an amount exceeding 12 parts by weight based on 100 parts by weight of the whole glass frit, the firing temperature of the paste composition may increase. This is because SiO 2 corresponds to a substance which greatly increases the firing temperature in the network forming material.

Al 2 O 3 acts as an intermediate to improve the moisture resistance, acid resistance and corrosion resistance while controlling the firing temperature. At this time, if Al 2 O 3 is contained in an amount of less than 5 parts by weight with respect to 100 parts by weight of the entire glass frit, the effect of controlling the firing temperature by Al 2 O 3 and improving the moisture resistance, acid resistance and corrosion resistance may not be sufficient. If Al 2 O 3 is contained in an amount exceeding 12 parts by weight based on 100 parts by weight of the glass frit as a whole, the content of the other materials may be reduced and the corresponding characteristics of the paste composition may be deteriorated.

ZnO is one of the deformed materials of the network, and has the effect of cutting the mesh structure and lowering the firing temperature. Particularly, ZnO has an excellent effect of lowering the firing temperature and is included in the glass frit, thereby effectively lowering the firing temperature of the paste composition. At this time, if ZnO is contained in an amount of less than 3 parts by weight based on 100 parts by weight of the glass frit as a whole, reduction in firing temperature due to ZnO may not be sufficient. If ZnO is contained in an amount exceeding 5 parts by weight based on 100 parts by weight of the glass frit as a whole, the formation of the mesh structure may not be smoothly performed.

Alkali metal oxide is one of the deformed materials of the network, and has the effect of lowering the firing temperature by cutting the mesh structure. In one example, the alkali metal oxide may include one of Na 2 O, Li 2 O, K 2 O, or a mixture thereof. If the alkali metal compound is contained in an amount of less than 2 parts by weight based on 100 parts by weight of the glass frit as a whole, the decrease in sintering temperature caused by the alkali metal compound may not be sufficient. If the alkali metal compound is contained in an amount of more than 5 parts by weight based on 100 parts by weight of the whole glass frit, formation of the network structure may not be smoothly performed. Since the alkali metal compound is a material which is not excellent in moisture resistance, acid resistance and corrosion resistance, if it is contained in large amounts, it may deteriorate the moisture resistance, acid resistance and corrosion resistance of the paste composition, so that it should not exceed 5 parts by weight.

As an example, 0 to 2 parts by weight of Na 2 O, 0 to 4 parts by weight of Li 2 O and 0 to 2 parts by weight of K 2 O may be included in 100 parts by weight of the glass frit as a whole. More specifically, 0 to 1 part by weight of Na 2 O, 0 to 2 parts by weight of Li 2 O and 0 to 1 part by weight of K 2 O may be contained. Within this range, the moisture resistance, acid resistance, corrosion resistance and the like of the paste composition can be excellent.

P 2 O 5 is one of the mesoporous materials and serves to form a network structure. Since the sintering temperature is not so high as that of SiO 2 , it can be included in the glass frit so as not to increase the sintering temperature significantly while including the network forming material. However, since it is vulnerable to moisture and is not excellent in moisture resistance, acid resistance and corrosion resistance, it is not a substance which is necessarily contained and is included in a maximum of 2 parts by weight, even if it is included. In this range, the moisture resistance, acid resistance and corrosion resistance of the electrodes (42, 44) can be kept excellent.

B 2 O 5 is one of the mesoporous materials and serves to form a network structure. Since the sintering temperature is not so high as that of SiO 2 , it can be included in the glass frit so as not to increase the sintering temperature significantly while including the network forming material. However, since it is vulnerable to moisture and is not excellent in moisture resistance, acid resistance and corrosion resistance, it is not a substance that is necessarily contained and is included in a maximum of 1 part by weight even if it is included. In this range, the moisture resistance, acid resistance and corrosion resistance of the electrodes (42, 44) can be kept excellent.

Co 3 O 4 , MnO 2 , and TiO 2 may be included to impart the desired color to the paste composition. For example, a paste composition comprising Co 3 O 4 may be blue, a paste composition comprising MnO 2 may be gray, and a paste composition comprising TiO 2 may be white. In addition, Co 3 O 4 , MnO 2 and TiO 2 can also prevent the viscosity from significantly lowering at high temperatures. However, since it is not an indispensable material, Co 3 O 4 is 0 to 2 parts by weight, MnO 2 and TiO 2 Each containing 0 to 1 part by weight.

V 2 O 5 is one of the network forming materials, and plays a role in forming a network structure. Since the sintering temperature is not so high as that of SiO 2 , it can be included in the glass frit so as not to increase the sintering temperature significantly while including the network forming material. However, the material cost is high, so it is not included in the material that is essential to be contained, and if it is included, it is included in a maximum of 5 parts by weight.

The glass frit may be contained in an amount of 2 to 5 parts by weight per 100 parts by weight of the entire paste composition. The glass frit can improve the adhesive strength, sintering ability, and post-processing process characteristics of the solar cell 150 within the range of 2 to 5 parts by weight.

The organic vehicle may be one in which the binder is dissolved in a solvent, and may further contain a defoaming agent, a dispersant, and the like. As the solvent, organic solvents such as terpineol and carbitol can be used. As the binder, a cellulose-based binder may be used.

The organic vehicle may contain 5 to 28 parts by weight of powder per 100 parts by weight of the total paste composition. Here, if the organic vehicle is contained in an amount exceeding 28 parts by weight, the electrical conductivity of the electrodes 42, 44 can be lowered. If the organic vehicle contains less than 5 parts by weight, the glass frit and the conductive powder may not be uniformly dispersed. In one example, the organic vehicle may be included in an amount of 8 to 15 parts by weight based on 100 parts by weight of the whole paste composition. However, the present invention is not limited thereto, and it goes without saying that the amount of the organic vehicle may vary depending on the amount of the glass frit and the conductive powder.

Other additives may further include a thixotropic agent, a leveling agent, an antifoaming agent, and the like. As the plasticizer, a polymer / organic material such as urea type, amide type or urethane type may be used, or inorganic type silica may be used.

Such a paste composition can be prepared by the following method.

The binder is dissolved in a solvent and then pre-mixed to form an organic vehicle. The conductive powder, glass frit and additives are added to the organic vehicle and aged for a period of time. The aged mixture is mechanically mixed and dispersed through a 3 roll mill or the like. The mixture is filtered and defoamed to prepare a paste composition. However, this method is merely an example, and the present invention is not limited thereto.

The electrodes 42 and 44 can be formed by applying the paste composition thus produced on the semiconductor substrate 152 by various methods (for example, screen printing or the like) and then firing. At this time, the organic vehicle, the additive, and the like are volatilized or removed by the heat applied at the time of firing, and the conductive powder is fired in the electrodes 42 and 44, and the formed metal (particularly, silver) and the glass frit are mainly left.

Accordingly, the metal (particularly, silver) may be contained in an amount of 93.3 to 97.8 parts by weight, and the glass frit may be included in an amount of 2.2 to 6.7 parts by weight based on 100 parts by weight of the whole of the electrodes 42 and 44. For example, the metal (particularly, silver) may be contained in an amount of 94.2 to 97.8 parts by weight, and the glass frit may be included in an amount of 2.2 to 5.8 parts by weight based on 100 parts by weight of the whole of the electrodes 42 and 44. And the weight portion for each material with respect to 100 parts by weight of the total glass frit mentioned above can be maintained as it is at the electrodes 42 and 44. [

By way of reference, various methods known for the method of analyzing the components in the electrodes 42 and 44 can be used.

As described above, in this embodiment, the paste composition or the glass frit of the electrodes 42 and 44 formed therefrom is made of PbO, Bi 2 O 3 , TeO 2 , do. And SiO 2 capable of improving moisture resistance, acid resistance and corrosion resistance And Al 2 O 3 in a relatively high content and can lower the moisture resistance, acid resistance and corrosion resistance, alkali metal oxides such as P 2 O 5 And B 2 O 3 as SiO 2 And Al 2 O 3 . This can improve the moisture resistance, acid resistance and corrosion resistance of the paste composition and the electrodes 42 and 44 formed by the paste composition. The electrodes 42 and 44 thus fabricated can be applied to the solar cell 150 and the solar cell panel 100 to improve long-term reliability. In particular, by using the first and / or second sealing layers 131 and 132 including the resin as the main component and the rear substrate 120 and / or the ethylene-vinyl acetate copolymer resin, The panel 100 can greatly improve the long-term reliability.

Hereinafter, the present invention will be described in more detail by way of examples. However, the present invention is not limited thereto.

Example

The organic vehicle was prepared by dissolving the binder in the solvent. Α-terpineol was used as a solvent, and cellulose was used as a binder. Conductive powder, glass frit and additives were added to the organic vehicle and then mixed. The glass frit in the SiO 2 11.4 parts by weight based on the total 100 parts by weight, 10.2 parts by weight of Al 2 O 3, 3.5 weight parts including ZnO, and 0.5 parts by weight of Na 2 O, 2 parts by weight of LiO 2, 1.75 parts by weight of P 2 O 5 , 0.88 parts by weight of B 2 O 3 , and the balance PbO.

This was aged for 12 hours and then mixed and dispersed in a second roll using a three roll mill. This was filtered and defoamed to form a paste composition. At this time, the paste composition contained 16 parts by weight of an organic vehicle, 80 parts by weight of conductive powder, and 4 parts by weight of glass frit.

This paste composition was coated on a semiconductor substrate having a conductive type region by a printing method and then fired to form an electrode.

Comparative Example  One

An electrode was formed in the same manner as in Example except for the composition of the glass frit. The glass frit contained 2.44 parts by weight of SiO 2 , 10.2 parts by weight of Al 2 O 3 and 3.5 parts by weight of ZnO, and 7.32 parts by weight of B 2 O 3 and the remainder of PbO relative to 100 parts by weight of the entire glass frit.

Comparative Example  2

An electrode was formed in the same manner as in Example except for the composition of the glass frit. The glass frit comprises 6.2 parts by weight of SiO 2, 10.2 parts by weight of Al 2 O 3, 3.5 parts by weight of ZnO based on the total 100 parts by weight, and contained 2.5 parts by weight of P 2 O 5, remainder PbO.

According to Examples and Comparative Examples, a damp heat test was performed on a solar cell including an electrode, and electroluminescence (EL) photographs of the solar cell were taken. The output value of the solar cell was measured before and after the damp heat test. Here, the damp heat test is to maintain the temperature at 85 ° C and 85% humidity for 1000 hours.

FIG. 5 shows an EL photograph of the solar cell according to the example, FIG. 6 shows the EL photograph of the solar cell according to the comparative example 1, and FIG. 7 shows the EL photograph of the solar cell according to the comparative example 2. The output changes after the damp heat test based on the damp heat test before and after the damp heat test in the solar cells according to Examples, Comparative Example 1 and Comparative Example 2 are shown in Table 1 as%.

Output change [%] Example 0.49 Comparative Example 1 -3.22 Comparative Example 2 -2.45

Referring to Table 1, the output voltage of the solar cell according to the embodiment did not decrease even after the damp heat test. However, the output voltage of the solar cell according to Comparative Examples 1 and 2 decreased by 3.22% and 2.45%, respectively. Referring to FIG. 5, the photovoltaic cell according to the embodiment has a bright light as a whole, indicating that photoelectric conversion is performed as a whole. Referring to FIG. 6 and FIG. 7, it can be seen that the photovoltaic cells according to Comparative Examples 1 and 2 are partially black, so that photoelectric conversion does not occur at this portion.

In the examples of the present invention, it is preferable that SiO 2 and Al 2 O 3 each capable of improving moisture resistance, acid resistance and corrosion resistance are contained in an amount of 6 parts by weight or more and 5 parts by weight or more, 2 to 5 parts by weight of oxide, 2 parts by weight of P 2 O 5 and 1 part by weight or less of B 2 O 3 are not expected to occur even when exposed for a long time in a high temperature and high humidity environment.

On the other hand, Example 1 contains more than 1 part by weight of B 2 O 3 which contains less than 6 parts by weight of SiO 2 which can improve moisture resistance, acid resistance and corrosion resistance, and which can lower the moisture resistance, acid resistance and corrosion resistance It is predicted that the output decrease phenomenon is caused by the long time exposure in a high temperature and high humidity environment. In Example 2, P 2 O 5 , which can lower the moisture resistance, acid resistance and corrosion resistance, is contained in an amount exceeding 2 parts by weight, and it is estimated that the output decrease phenomenon occurs due to prolonged exposure in a high temperature and high humidity environment

Features, structures, effects and the like according to the above-described embodiments are included in at least one embodiment of the present invention, and the present invention is not limited to only one embodiment. Further, the features, structures, effects, and the like illustrated in the embodiments may be combined or modified in other embodiments by those skilled in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

100: Solar panel
110: front substrate
120: rear substrate
130: sealing layer
150: Solar cell
152: semiconductor substrate
20: first conductivity type region
30: second conductivity type region
42: first electrode
44: Second electrode

Claims (15)

A semiconductor substrate;
A conductive type region formed in the semiconductor substrate; And
The electrode connected to the conductive region
/ RTI >
Wherein the electrode comprises silver (Ag) as a main component and a glass frit,
Wherein the glass frit contains as main component the main metal component selected from the group consisting of PbO, Bi 2 O 3 , TeO 2 and mixtures thereof as the main component contained most in the glass frit, and 6 to 12 parts by weight of SiO 2 , 12 parts by weight of Al 2 O 3 , 3 to 5 parts by weight of ZnO, 2 to 5 parts by weight of an alkali metal oxide, 0 to 2 parts by weight of P 2 O 5 and 0 to 1 part by weight of B 2 O 3 . The method according to claim 1,
The glass frit is 2, Co 3 O or less parts by weight of 4: 1 parts by weight of MnO 2 and 1 weight part or less TiO 2, and the solar cell further includes at least one of V 2 O 5 of less than 5 parts by weight. The method according to claim 1,
Wherein the silver is contained in an amount of 93.3 to 97.8 parts by weight based on 100 parts by weight of the electrode, and the glass frit is included in a range of 2.2 to 6.7 parts by weight. The method of claim 3,
Wherein the silver is contained in an amount of 94.2 to 97.8 parts by weight based on 100 parts by weight of the electrode, and the glass frit is included in an amount of 2.2 to 5.8 parts by weight. The method according to claim 1,
The electrodes comprising a plurality of finger electrodes formed in parallel with one another and contacting the conductive region,
Wherein the plurality of finger electrodes comprise the silver and the glass frit. A solar cell including a photoelectric conversion unit and an electrode connected to the photoelectric conversion unit;
A sealing layer surrounding and sealing the solar cell;
A front substrate located on the front surface of the solar cell on the sealing layer; And
And a sealing resin layer formed on the back surface of the solar cell,
/ RTI >
Wherein the electrode comprises silver (Ag) as a main component and a glass frit,
Wherein the glass frit contains as main component the main metal component selected from the group consisting of PbO, Bi 2 O 3 , TeO 2 and mixtures thereof as the main component contained most in the glass frit, and 6 to 12 parts by weight of SiO 2 , A solar cell panel comprising 12 parts by weight of Al 2 O 3 , 3 to 5 parts by weight of ZnO, 2 to 5 parts by weight of an alkali metal oxide, 0 to 2 parts by weight of P 2 O 5 and 0 to 1 part by weight of B 2 O 3 . The method according to claim 6,
Wherein the sealing layer comprises an ethylene-vinyl acetate copolymer resin. The method according to claim 6,
The glass frit is 2 parts by weight or less of Co 3 O 4, 1 parts by weight of MnO 2, a solar panel further includes at least one of a 1 part by weight or less of TiO 2, and the V 2 O 5 parts by weight or less 5 . The method according to claim 6,
Wherein the silver is contained in an amount of 93.3 to 97.8 parts by weight based on 100 parts by weight of the electrode, and the glass frit is included in a range of 2.2 to 6.7 parts by weight. 10. The method of claim 9,
Wherein the silver is contained in an amount of 94.2 to 97.8 parts by weight based on 100 parts by weight of the electrode, and the glass frit is included in a range of 2.2 to 5.8 parts by weight. The method according to claim 6,
Wherein the photoelectric conversion portion includes a semiconductor substrate and a conductive type region formed in the semiconductor substrate,
The electrodes comprising a plurality of finger electrodes formed in parallel with one another and contacting the conductive region,
Wherein the plurality of finger electrodes comprise the silver and the glass frit. A conductive powder comprising silver (Ag);
Glass frit; And
Organic vehicle
/ RTI >
Wherein the glass frit contains as main component the main metal component selected from the group consisting of PbO, Bi 2 O 3 , TeO 2 and mixtures thereof as the main component contained most in the glass frit, and 6 to 12 parts by weight of SiO 2 , A solar cell comprising 12 parts by weight of Al 2 O 3 , 3 to 5 parts by weight of ZnO, 2 to 5 parts by weight of an alkali metal oxide, 0 to 2 parts by weight of P 2 O 5 and 0 to 1 part by weight of B 2 O 3 Electrode paste composition. 13. The method of claim 12,
Wherein the glass frit further comprises at least one of Co 2 O 3 and CoO 4 , 1 or less parts by weight of MnO 2 , 1 or less parts by weight of TiO 2 , and 5 or less parts by weight of V 2 O 5 Electrode paste composition. 13. The method of claim 12,
With respect to 100 parts by weight of the entire paste composition,
The silver is included in an amount of 70 to 90 parts by weight,
The glass frit is contained in an amount of 2 to 5 parts by weight,
And 5 to 28 parts by weight of the organic vehicle. 15. The method of claim 14,
With respect to 100 parts by weight of the entire paste composition,
The silver is included in an amount of 80 to 90 parts by weight,
The glass frit is contained in an amount of 2 to 5 parts by weight,
And 8 to 15 parts by weight of the organic vehicle.
KR1020150078168A 2015-06-02 2015-06-02 Solar cell and solar cell panel including the same, and paste composition for electrode of solar cell KR20160142168A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020150078168A KR20160142168A (en) 2015-06-02 2015-06-02 Solar cell and solar cell panel including the same, and paste composition for electrode of solar cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020150078168A KR20160142168A (en) 2015-06-02 2015-06-02 Solar cell and solar cell panel including the same, and paste composition for electrode of solar cell

Publications (1)

Publication Number Publication Date
KR20160142168A true KR20160142168A (en) 2016-12-12

Family

ID=57574349

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020150078168A KR20160142168A (en) 2015-06-02 2015-06-02 Solar cell and solar cell panel including the same, and paste composition for electrode of solar cell

Country Status (1)

Country Link
KR (1) KR20160142168A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI647195B (en) * 2016-12-30 2019-01-11 大陸商無錫帝科電子材料股份有限公司 Paste composition for forming solar cell electrode, solar cell electrode, and solar cell

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI647195B (en) * 2016-12-30 2019-01-11 大陸商無錫帝科電子材料股份有限公司 Paste composition for forming solar cell electrode, solar cell electrode, and solar cell

Similar Documents

Publication Publication Date Title
KR102032280B1 (en) Paste composition for forming electrode of solar cell
KR101246686B1 (en) Paste for forming electrode of solar cell and solar cell with the same
US9608139B2 (en) Solar cell
JP4948876B2 (en) The conductive paste for solar cell elements, and the manufacturing method of a solar cell element using the same.
US9666731B2 (en) Composition for solar cell electrodes, electrode fabricated using the same, and solar cell having the electrode
US9263169B2 (en) Aluminum paste and solar cell
JP5219355B2 (en) Method for manufacturing solar cell element
US20160284892A1 (en) Glass frit composition, paste composition for solar cell electrodes including the same and solar cell module
KR20180116424A (en) Conductive paste and solar cell
KR20160014503A (en) Composition for forming solar cell electrode, electrode prepared using the same, and solar cell having the electrode
KR102398002B1 (en) Solar cell and soalr cell panel including the same
KR102367363B1 (en) Solar cell panel and method for manufacturing the same
KR102336219B1 (en) Solar cell and method for manufacturing the same
US9059357B2 (en) Bifacial solar cell
KR20160142168A (en) Solar cell and solar cell panel including the same, and paste composition for electrode of solar cell
KR102431078B1 (en) Solar cell panel and method for manufacturing the same
TWI740684B (en) Glass frit and electrode paste composition for solar cell comprising the same
KR102283727B1 (en) Glass frit and electrode paste composition for solar cell comprising the same
KR20190066158A (en) Composition for forming solar cell electrode and electrode prepared using the same
KR102298673B1 (en) Solar cell module and ribbon used for the same
KR102306435B1 (en) Paste composition for solar cell electrode and solar cell
KR102342518B1 (en) Conductive paste composition for electrode of solar cell and solar cell comprising electrode manufactured using the same
KR20130063264A (en) Metal paste composition for forming electrode and silicon solar cell using the same
JP2016115873A (en) Conductive paste for forming solar cell electrode, and solar cell element and solar cell module using the same
KR101162162B1 (en) Electrode paste for solar cell, solar cell using the paste, and manufacturing method of the solar cell