KR20160106869A

KR20160106869A - Manufacturing method of substrate graphene growth and substrate graphene growth

Info

Publication number: KR20160106869A
Application number: KR1020150029502A
Authority: KR
Inventors: 이윤택
Original assignee: 이윤택
Priority date: 2015-03-03
Filing date: 2015-03-03
Publication date: 2016-09-13

Abstract

According to the present invention,
a. Providing a metal layer on the substrate Thereafter,
b. An etching gas and a carbon-containing gas are supplied and plasma-enhanced chemical vapor deposition (PECVD) is performed,
c. Supplying an etchant gas of a metal together in the carbon-containing gas supply, growing graphene on the metal layer,
d. In the step c), plasma-enhanced chemical vapor deposition (PECVD) is continuously performed, and the metal of the metal layer is continuously removed entirely due to the etching gas, To grow graphene; The method comprising the steps of:
The present invention also provides a method for producing a substrate growth graphene.
In addition,
With substrate growth graphene,
The substrate growth graphene directly contacts the surface of the substrate,
The crystal grain size in the first direction parallel to the surface of the substrate growth graphene is larger than the crystal grain size in any other direction parallel to the surface of the substrate growth graphene,
The grain size of the grains in the first direction of the substrate growth grains is larger than that in a direction perpendicular to the surface of the grains; Lt; RTI ID = 0.0 > graphenes < / RTI >
In addition,
With substrate growth graphene,
The substrate growth graphene directly contacts the surface of the substrate,
Wherein the substrate growth graphene has a grain boundary along a first direction parallel to the surface,
The substrate growth graphene having a grain boundary along a second direction parallel to the surface; Lt; RTI ID = 0.0 > graphenes < / RTI >
In addition,
With substrate growth graphene,
The substrate growth graphene directly contacts the surface of the substrate,
Wherein the substrate growth graphene has a plurality of crystal grain boundaries along a first direction parallel to the surface,
The substrate growth graphene having a plurality of grain boundaries in a second direction parallel to the surface; Lt; RTI ID = 0.0 > graphenes < / RTI >

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a method of manufacturing graphene,

The present invention relates to a method of manufacturing a substrate growth graphene, a substrate growth graphene, and an electronic component including the same.

Graphene is a hexagonal material consisting of a single layer of carbon atoms, which transports electrons 100 times faster than silicon.

In addition, graphene has been extensively studied in the fields of electricity, electronics, etc. worldwide due to its unique properties such as high electron mobility.

For such a method of producing graphene (a method of growing graphene), a growth method using a catalyst layer is mainly used.

Graphene produced by the conventional technique becomes a heterogeneous polycrystalline film randomly growing crystal grains since crystals randomly grow from the catalyst metal. Therefore, there is a demand for a technique of producing a single crystal graphene as large as possible by limiting the growth of grain boundaries to desired positions by controlling the growth of graphene.

Further, since the graphene growth method using the catalytic metal once forms graphene, the metal of the catalyst is sandwiched between the graphene and the substrate. Therefore, the metal removal requires a lot of effort and is easy to remove completely It is not.

In addition, a method of transferring graphene rather than a method of growing graphene is likely to cause defects when transferring graphene.

Therefore, there is a need for a technique for producing graphene that directly contacts the surface of a substrate without leaving a catalyst metal on the substrate while generating less defects.

Further, there is a need for a technique for producing a single crystal graphene as large as possible while generating less defects.

SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and it is an object of the present invention to provide a method for manufacturing a substrate growth graphene, a substrate growth graphene and an electronic component including the same.

Therefore, in order to solve the above-described problems,

a. Providing a metal layer on the substrate Thereafter,

b. An etching gas and a carbon-containing gas are supplied and plasma-enhanced chemical vapor deposition (PECVD) is performed,

c. Supplying an etchant gas of a metal together in the carbon-containing gas supply, growing graphene on the metal layer,

d. In the step c), plasma-enhanced chemical vapor deposition (PECVD) is continuously performed, and the metal of the metal layer is continuously removed entirely due to the etching gas, To grow graphene; And a method for manufacturing a substrate growth graphene.

The present invention also provides a method for producing a substrate growth graphene.

In addition,

With substrate growth graphene,

The substrate growth graphene directly contacts the surface of the substrate,

The crystal grain size in the first direction parallel to the surface of the substrate growth graphene is larger than the crystal grain size in any other direction parallel to the surface of the substrate growth graphene,

The grain size of the grains in the first direction of the substrate growth grains is larger than that in a direction perpendicular to the surface of the grains; Lt; RTI ID = 0.0 > graphenes < / RTI >

In addition,

With substrate growth graphene,

The substrate growth graphene directly contacts the surface of the substrate,

Wherein the substrate growth graphene has a grain boundary along a first direction parallel to the surface,

The substrate growth graphene having a grain boundary along a second direction parallel to the surface; Lt; RTI ID = 0.0 > graphenes < / RTI >

In addition,

With substrate growth graphene,

The substrate growth graphene directly contacts the surface of the substrate,

Wherein the substrate growth graphene has a plurality of crystal grain boundaries along a first direction parallel to the surface,

The substrate growth graphene having a plurality of grain boundaries in a second direction parallel to the surface; Lt; RTI ID = 0.0 > graphenes < / RTI >

The present invention provides a method for producing a substrate growth graphene.

The present invention also provides substrate growth graphenes.

The present invention also provides a method for manufacturing a substrate growth graphene, a substrate growth graphene, and an electronic part including the same.

1
1,
(One). Substrate,
(2). Providing a metal layer on the substrate Thereafter,
(3). An etching gas and a carbon-containing gas are supplied and plasma-enhanced chemical vapor deposition (PECVD) is performed,
(4). Supplying an etchant gas of a metal together in the carbon-containing gas supply, growing graphene on the metal layer,
(5). In the step (4), the plasma-enhanced chemical vapor deposition (PECVD) is continuously performed, and the metal of the metal layer is continuously removed by the etching gas, Growing graphene on the substrate,
(1) to (5), which are constituted by the above-described grains.
2
In one embodiment of the present invention, it is a cross-sectional view schematically showing a first example of a substrate growth graphene provided with a method of manufacturing a substrate growth graphene to be proposed.
Fig. 3A
3A is a view schematically showing (1) or (2) described below.
(One). In the metal layer, if the concentration distribution of the carbon-containing gas is non-uniform, the growth of graphene starts from the point where the concentration of the carbon-containing gas is high and grows toward the point where the concentration of the carbon-containing gas is low.
Therefore, by appropriately setting the concentration distribution of the carbon-containing gas, it is possible to control the direction in which graphene crystals grow.
Of course, in one embodiment of the present invention, the starting point of graphene growth may be nucleation of graphene at undesired locations as well as at locations to be presented in the present invention, Can be understood as neglecting the nucleation of graphene generated in the graphene.
(2). The carbon-containing gas supply may include growing a graphene in a direction parallel to the surface of the substrate as the concentration distribution of the concentration distribution of the carbon-containing gas in the direction parallel to the surface of the substrate is uneven ; &Lt; / RTI >
Of course, in one embodiment of the present invention, the starting point of graphene growth may be nucleation of graphene at undesired locations as well as at locations to be presented in the present invention, Can be understood as neglecting the nucleation of graphene generated in the graphene.
3B
FIG. 3B is a view schematically showing (1) or (2) described below.
(One). With a rapid removal of the metal, the carbon that can not grow on the rapidly removed metal can grow into graphene on the metal layer where the concentration of the etching gas is low, while maintaining high mobility. In one embodiment of the present invention, nucleation of a new graphene can be inhibited, since carbon with high mobility is transferred to graphene nucleated for the first time by metal layer (metal) removal, The crystal grain size of the fin can be increased.
Therefore, even if the concentration distribution of the carbon-containing gas is uniform in the metal layer, the growth of graphene starts from the point where the concentration of the etching gas is low and grows toward the point where the concentration of the etching gas is high.
Of course, in one embodiment of the present invention, the starting point of graphene growth may be nucleation of graphene at undesired locations as well as at locations to be presented in the present invention, Can be understood as neglecting the nucleation of graphene generated in the graphene.
(2). Supplying the etching gas includes growing a graphene in a direction parallel to the surface of the substrate as the concentration distribution in the direction parallel to the surface of the substrate among the concentration distribution of the etching gas in the metal layer is made non-uniform; A method for producing a substrate growth graphene
Of course, in one embodiment of the present invention, the starting point of graphene growth may be nucleation of graphene at undesired locations as well as at locations to be presented in the present invention, Can be understood as neglecting the nucleation of graphene generated in the graphene.
3C
3C is a view schematically showing (1) or (2) described below.
(One). The method of manufacturing the substrate growth graphenes to be described in this figure can be described as follows.
a. The shape of the metal layer is formed to have a three-dimensional height. In one embodiment of the present invention, a resist mask or the like may be used to remove the metal layer from being formed at a portion other than the necessary portion.
b. The concentration of the etching gas is set so that the metal is quickly removed at a high level of the metal layer and the concentration of the etching gas is low at the low level of the metal layer.
c. In the metal layer, the concentration of the carbon-containing gas is raised at the lower part of the metal layer.
d. PECVD is performed.
e. Then, with the rapid removal of the metal, the carbon that can not grow on the rapidly removed metal is grown to the graphene at a low concentration of the etching gas while maintaining high mobility. Of course, in one embodiment of the present invention, the starting point of graphene growth may be nucleation of graphene at undesired locations as well as at locations to be presented in the present invention, Can be understood as neglecting the nucleation of graphene generated in the graphene.
f. If the etching is continued while maintaining the PECVD, the grown graphene grows further. Since the etching is performed while maintaining PECVD, carbon grows to have a crystal structure with the already-grown graphene. At this time, the growth direction of the graphene grows from the low to the high position of the metal layer.
g. And finally, the metal layer is completely removed and the graphene is brought into direct contact with the surface of the substrate.
(2). The carbon-containing gas supply causes the concentration distribution in the direction parallel to the surface of the substrate to be uneven in the concentration distribution of the carbon-containing gas in the metal layer,
The etching gas supply causes the concentration distribution in the direction parallel to the surface of the substrate among the concentration distribution of the etching gas to be uneven in the metal layer,
Growing graphene in a direction parallel to the surface of the substrate; &Lt; / RTI >
Of course, in one embodiment of the present invention, the starting point of graphene growth may be nucleation of graphene at undesired locations as well as at locations to be presented in the present invention, Can be understood as neglecting the nucleation of graphene generated in the graphene.
4
Fig. 4 is a view schematically showing the following description.
(One). A substrate is prepared. Then, a slit mask (for example, a slit provided on a metal foil or the like) is disposed at a predetermined distance from the substrate, and the metal is supplied by sputtering via the slit. In one embodiment of the present invention, a resist mask or the like may be used to remove the metal layer from being formed at a portion other than the necessary portion.
(2). Then, the metal layer is formed to be high in the vicinity of the slit, and the metal layer is formed to be low when the slit is moved away from the slit. In this embodiment, since the metal is supplied from the top to the bottom, the shape of the metal layer is symmetrical
5
5 is a view schematically showing the following description.
The metal layer 200 is provided on the substrate provided with the bend. The metal layer 200 may be formed into two small and large rectangular patterns. The metal layer 200 has a shape in which a first region spreading in parallel to the surface of the substrate and a second region spreading in parallel to the surface of the substrate are in contact with the curvature. Here, the width of the bending is made sufficiently small.
For example, (a). (B) a first region made up of a very small square extending in parallel to the surface of the substrate and a left vertex of the second region (the apex portion widening parallel to the surface of the substrate); The center point of the first region made up of a very small square is connected to the left vertex of the second region made up of a large square having a slope (the apex portion is widened in parallel to the surface of the substrate). The thickness of the metal layer is inclined so that the first region is thinner than the second region and thicker in the second region toward the right vertex.
In the figure, the metal layer 200 is shown by a shade, and the metal layer 200 is thicker as the shade is thicker as the metal layer 200 is thin and the shade is faint.

In the following description of the present invention, detailed description of known functions and configurations incorporated herein will be omitted when it may make the subject matter of the present invention rather unclear.

It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory and are intended to be exemplary only, and are not intended to limit the scope of the invention.

Substrate growth method of graphene and substrate growth graphene

In the conventional graphene growth method using a catalytic metal, once the graphene is formed, the metal of the catalyst is sandwiched between the graphene and the substrate. Therefore, a great deal of effort is required to remove the metal, It is not.

In order to solve the problems described above, according to the present invention,

(One). (Or deposition) of a metal layer on a substrate,

(2). An etching gas and a carbon-containing gas are supplied and plasma-enhanced chemical vapor deposition (PECVD) is performed,

(3). Supplying an etchant gas of a metal together in the carbon-containing gas supply, growing graphene on the metal layer,

(4). In the step (3), the plasma-enhanced chemical vapor deposition (PECVD) is continuously performed, and the metal of the metal layer continuously flows through the entire surface of the substrate Wherein the graphenes are directly contacted with the graphenes on the substrate.

In other words, there is provided a removing process for removing the metal layer with an etching gas while supplying an etching gas and a carbon-containing gas and maintaining the plasma enhanced chemical vapor deposition (PECVD). Growing pins; The method comprising the steps of:

"Plasma-Enhanced Chemical Vapor Deposition " (PECVD) proposed in the present invention can be expressed as" PECVD ". The PECVD process proposed in the present invention means a PECVD process as a method of manufacturing substrate growth grains, which is referred to as a new technique in the present invention, in which the etching process of the metal layer is included in the PECVD process to directly grow graphene on the substrate .

In one embodiment of the present invention, the method of manufacturing the substrate growth graphene is such that, with the removal of the metal layer while maintaining the PECVD, the carbon that can not grow on the metal to be removed remains graphened on the metal layer, It can grow. In one embodiment of the present invention, nucleation of a new graphene can be inhibited, since carbon with high mobility is transferred to graphene nucleated for the first time by metal layer (metal) removal, The crystal grain size of the fin can be increased.

In one embodiment of the present invention, in the metal layer removing process in the method of manufacturing the substrate growth graphene, an etching gas is supplied to remove the metal layer. When the substrate is etched for a sufficient time until all of the metal layer is removed according to the method of manufacturing the substrate grown graphene, the graphene is brought into contact with the substrate without interposing a metal layer therebetween.

In one embodiment of the present invention, the method of manufacturing the substrate growth graphenes is also described below. With the PECVD maintained, the metal layer is removed by an etching gas such as chlorine. Then, on the surface of the metal layer, carbon grows as graphene. If the etching is continued while maintaining the PECVD, the grown graphene grows further. Since the etching is performed while maintaining PECVD, carbon grows to have a crystal structure with the already-grown graphene. Finally, the metal layer is completely removed and the graphene comes into direct contact with the surface of the substrate.

Therefore, unlike a conventional method using a metal catalyst, graphene can be directly grown on a substrate without a metal layer. Further, in the conventional method of transferring the graphene beforehand, defects are easily generated in the graphene at the time of transferring. However, in the method of manufacturing a substrate growth graphene according to the present invention, after the shape of the metal layer is adjusted by performing selective etching, a method of manufacturing a substrate growth graphene may be performed to directly form graphene on the substrate .

In addition, in the conventional method of performing patterning of graphene after transferring the graphene to a large area of the substrate, there arises a problem that graphene is not accurately provided when applied to a substrate on which a structure is already formed. However, in the method of manufacturing a substrate growth graphene according to the present invention, after the shape of the metal layer is adjusted by performing selective etching, the graphene is directly formed on the substrate by performing the method of manufacturing the substrate growth graphene, The problem does not occur.

Therefore, a. Providing a metal layer on the substrate, and

b. Adjusting the shape of the metal layer by performing selective etching, and

c. Performing a method of manufacturing a substrate growth graphene to directly form graphene on a substrate, and thereafter performing patterning of graphene;

, The graphene can be provided more precisely than the conventional method even if it is applied to the substrate on which the structure has already been formed, and the number of defects can be reduced. Here, the selective etching described in one aspect means that the desired portion is left by performing the etching process. The etch process is known to those skilled in the art and is therefore not described further herein.

In one embodiment of the present invention, in addition to the method of performing the selective etching, the method of forming the metal layer may further include a step of forming a resist mask by dissolving the resist mask after deposition of the metal layer, And removing the metal layer formed on the surface of the metal layer and providing a metal layer having a desired pattern and shape.

In one embodiment of the present invention, in the method of manufacturing the substrate growth graphene, the metal of the metal layer is nickel and chlorine can be used as the etching gas. However, in one embodiment of the present invention, the method of manufacturing the substrate growth graphene may use any metal capable of growing carbon into graphene, and an etching gas for the metal. In one embodiment of the present invention, the arbitrary metal may mean a metal selected from a single crystal metal, a polycrystalline metal, and the like. In one embodiment of the present invention, the optional metal may refer to a metal in which the atoms are aligned.

In one embodiment of the present invention, in the method of manufacturing the substrate growth graphene, the metal layer may refer to a metal layer in which the atoms are aligned.

In one embodiment of the present invention, in the method of manufacturing the substrate growth graphene, the metal of the metal layer is made of a pure metal consisting of one metal element capable of being grown as graphene by carbon and being removable by an etching gas, May be used.

In one embodiment of the present invention, in the method of manufacturing the substrate growth graphene, the metal layer can be subjected to chemical mechanical polishing (CMP) as an additional option to adjust the thickness and flatness of the metal layer to a desired level have.

In one embodiment of the present invention, in the method of manufacturing the substrate growth graphene, the metal layer may mean a metal layer on which the metal layer is deposited and selectively etched.

In one embodiment of the present invention, in the method of manufacturing the substrate growth graphene, the metal layer may refer to a metal layer that has undergone the deposition of a metal layer and CMP, followed by selective etching.

In one embodiment of the present invention, in the method of manufacturing the substrate growth graphene, the metal layer may mean a metal layer subjected to at least one selected process of selective etching, CMP process.

In one embodiment of the present invention, in the method of manufacturing a substrate growth graphene, the substrate may be placed in a PECVD chamber with a metal layer provided to perform the method of manufacturing the substrate growth graphene.

In one embodiment of the invention, the method of manufacturing the substrate growth graphene may utilize a load-locked chamber.

In one embodiment of the invention, the method of manufacturing the substrate growth graphene can utilize a transfer system selected from an atmospheric pressure wafer transfer system, a vacuum wafer transfer system.

In one embodiment of the present invention, the method of manufacturing the substrate growth graphene can appropriately adjust the environment of the substrate in the process before and after the formation of the graphene by using the load-lock chamber.

In one embodiment of the invention, the method of manufacturing the substrate growth graphene can suitably control the graphene forming environment by using a load-lock chamber.

In one embodiment of the present invention, the method of making the substrate growth graphene can control the degree of graphene formation by appropriately controlling the graphene growth process. Therefore, in order to obtain the thickness of the desired graphene sheet, the temperature, the etching execution time, the degree of vacuum, the plasma power (plasma), and the like, as well as the etching gas and the type of the carbon- power, the temperature of the PECVD process, and the retention time can all be important factors. Those skilled in the art will appreciate that these important elements can be selectively and appropriately adjusted by one skilled in the art in an embodiment of the present invention. It will be easy to understand.

In an embodiment of the present invention, in the method of manufacturing the substrate growth graphene, the step of providing the metal layer provided on the substrate includes at least one of evaporation, electron beam evaporation, sputtering, atomic layer deposition (ALD) , Physical vapor deposition (PVD), or chemical vapor deposition (CVD), but the present invention is not limited thereto.

In one embodiment of the present invention, in the method of manufacturing a substrate growth graphene, the formation of graphene by PECVD is performed by etching the chamber of the PECVD apparatus while maintaining a low pressure, for example, a degree of vacuum of several to several tens of mTorr (Or supplying) a gas and a carbon-containing gas, and applying a plasma power of several tens W to several hundreds of W to form a plasma in the chamber, thereby forming a carbon - Graphene is formed by reaction of contained gas. In one embodiment of the present invention, the plasma power is not limited to several tens W to several hundreds W.

Therefore, the method of manufacturing the substrate growth graphene is performed by continuously performing the plasma enhanced chemical vapor deposition (PECVD) by using the etching gas (or by continuously supplying the etching gas) And a method of manufacturing a substrate growth graphene in which graphenes are directly in contact with a substrate. In the PECVD process, it is important that the carbon-containing gas is uniformly injected in the entire metal layer region to form a uniform plasma. In addition, it is important that the etching gas is uniformly injected to uniformly remove the metal layer. When the above process is performed, a substrate growth graphene directly contacting graphene on the substrate can be formed.

It is assumed that a certain concentration of etching gas contacts the surface of the metal layer and the metal is etched in the same manner.

In this case, when the concentration distribution of the carbon-containing gas in the metal layer is uniform, the starting point of graphene growth becomes random.

On the other hand, in the metal layer, if the concentration distribution of the carbon-containing gas is uneven, the growth of the graphene starts from the point where the concentration of the carbon-containing gas is high and grows toward the point where the concentration of the carbon- . Of course, in one embodiment of the present invention, the starting point of graphene growth may be nucleation of graphene at undesired locations as well as at locations to be presented in the present invention, Can be understood as neglecting the nucleation of graphene generated in the graphene.

Therefore, by appropriately setting the concentration distribution of the carbon-containing gas, it is possible to control the direction in which graphene crystals grow.

In addition, if the concentration distribution of the etching gas can be set non-uniformly, the removal of the metal becomes faster where the concentration of the etching gas is high.

Thus, with a rapid removal of the metal, the carbon that can not grow on the rapidly removed metal can grow into graphene on a metal layer at a low concentration of the etching gas, while maintaining high mobility. In one embodiment of the present invention, nucleation of a new graphene can be inhibited, since carbon with high mobility is transferred to graphene nucleated for the first time by metal layer (metal) removal, The crystal grain size of the fin can be increased.

Therefore, even if the concentration distribution of the carbon-containing gas is uniform in the metal layer, the growth of graphene starts from the point where the concentration of the etching gas is low and grows toward the point where the concentration of the etching gas is high. Of course, in one embodiment of the present invention, the starting point of graphene growth may be nucleation of graphene at undesired locations as well as at locations to be presented in the present invention, Can be understood as neglecting the nucleation of graphene generated in the graphene.

Thus, by appropriately setting the concentration distribution of the etching gas, it is possible to control the direction in which the grains grow.

By controlling the starting point and direction of graphene growth in this manner, the grain boundaries can be controlled to a predetermined position because grain boundaries of graphene are formed only at the growth start point and at the growth end point connected to the graphenes, By reducing the growth starting point of graphene, a large grain size can be realized. Of course, in one embodiment of the present invention, the starting point of graphene growth may be nucleation of graphene at undesired locations as well as at locations to be presented in the present invention, Can be understood as neglecting the nucleation of graphene generated in the graphene.

In the above-described metal layer, the concentration distribution of the carbon-containing gas and the concentration distribution of the etching gas may be appropriately combined to control the growth direction of graphene crystals.

In one embodiment of the present invention, a method of manufacturing a substrate growth graphene can be described as follows.

(One). The shape of the metal layer is formed to have a three-dimensional height. In one embodiment of the present invention, a resist mask or the like may be used to remove the metal layer from being formed at a portion other than the necessary portion.

(2). In the metal layer, the metal layer is formed such that the concentration of the etching gas is raised so that the metal is quickly removed, and the concentration of the etching gas is low in the metal layer.

(3). In the metal layer, the concentration of the carbon-containing gas is raised at the lower part of the metal layer.

(4). PECVD is performed.

(5). Then, with the rapid removal of the metal, the carbon that can not grow on the rapidly removed metal is grown to the graphene at a low concentration of the etching gas while maintaining high mobility. Of course, in one embodiment of the present invention, the starting point of graphene growth may be nucleation of graphene at undesired locations as well as at locations to be presented in the present invention, Can be understood as neglecting the nucleation of graphene generated in the graphene.

(6). If the etching is continued while maintaining the PECVD, the grown graphene grows further. Since the etching is performed while maintaining PECVD, carbon grows to have a crystal structure with the already-grown graphene. At this time, the growth direction of the graphene grows from the low to the high position of the metal layer.

(7). Finally, the metal layer is completely removed and the graphene comes into direct contact with the surface of the substrate. (1) to (7), wherein the graphene directly contacting the surface of the substrate can realize a large crystal grain diameter.

In one embodiment of the present invention, in order to prevent a metal layer from being formed on a portion other than the necessary portion, removal using a resist mask or the like can be carried out as described below. (One). Thereby forming a resist mask. Techniques for forming a resist mask are known to those skilled in the art and are therefore not described further herein, (2). A deposition process is performed to form a metal layer, (3). Next, the resist mask and the metal layer formed on the surface thereof are removed by dissolving the resist mask, and a metal layer having a desired pattern and shape is provided. The above process (1) to (3) is performed can do.

In one embodiment of the present invention, this embodiment is a method for manufacturing a substrate growth graphene in which graphenes are grown in a desired direction from a desired position as the thickness of the metal layer is unevenly formed. The method of manufacturing the substrate growth graphene is described below as <A>, , <C> .

<A>

(One). A substrate is prepared.

(2). Then, a slit mask (for example, a slit provided on a metal foil or the like) is disposed at a predetermined distance from the substrate, and the metal is supplied by sputtering via the slit. In one embodiment of the present invention, a resist mask or the like may be used to remove the metal layer from being formed at a portion other than the necessary portion.

(3). Then, the metal layer is formed to be high in the vicinity of the slit, and the metal layer is formed to be low when the slit is moved away from the slit. In this embodiment, since the metal is fed from the top to the bottom, the shape of the metal layer is symmetrical (points A and B).

(4). In the metal layer, the metal layer is formed so as to have a high concentration by increasing the concentration of the etching gas, and the lower portion (A point) on one side of the metal layer has a low concentration of the etching gas .

(5). In the metal layer, the concentration of the carbon-containing gas is raised at a low point (point A) on one side of the metal layer.

(6). PECVD is performed.

(7). Then, with the rapid removal of the metal, the carbon that can not grow on the rapidly removed metal is grown to the graphene at a low concentration of the etching gas while maintaining high mobility. That is, graphene grows at a low point (A point) on one side of the metal layer. Of course, in one embodiment of the present invention, the starting point of graphene growth may be nucleation of graphene at undesired locations as well as at locations to be presented in the present invention, Can be understood as neglecting the nucleation of graphene generated in the graphene.

(8). If the etching is continued while maintaining the PECVD, the grown graphene grows further. Since the etching is performed while maintaining PECVD, carbon grows to have a crystal structure with the already-grown graphene. At this time, the direction of growth of the graphene grows graphene from low to high in the metal layer (that is, it grows from left to right or from right to left in this embodiment)

(9). (1) to (9), wherein the metal layer is finally removed, and the graphene is brought into direct contact with the surface of the substrate.

(One). A substrate is prepared.

(4). In the metal layer, the metal layer is formed such that the concentration of the etching gas is increased so that the metal is removed quickly, and the concentration of the etching gas is low in the metal layer (points A and B).

(5). In the metal layer, the concentration of the carbon-containing gas is raised at the low points (points A and B) of the metal layer.

(6). PECVD is performed.

(7). Then, with the rapid removal of the metal, the carbon that can not grow on the rapidly removed metal is grown to the graphene at a low concentration of the etching gas while maintaining high mobility. In other words, graphenes grow at the low points (points A and B) of the metal layer. Of course, in one embodiment of the present invention, the starting point of graphene growth may be nucleation of graphene at undesired locations as well as at locations to be presented in the present invention, Can be understood as neglecting the nucleation of graphene generated in the graphene.

(8). If the etching is continued while maintaining the PECVD, the grown graphene grows further. Since the etching is performed while maintaining PECVD, carbon grows to have a crystal structure with the already-grown graphene. At this time, the direction of growth of the graphene grows graphene from the low to the high position of the metal layer (that is, it grows laterally in this embodiment)

<C>

This embodiment is a method for producing a substrate grafting grains by producing the plane grains by rotating the direction of the slit mask by 90 degrees when repeating the above embodiment twice.

(One). On the basis of the description of the embodiment B , a slit mask is provided so that the slit is located in the left-right direction. Incidentally, in one embodiment of the present invention, the slits are repeatedly arranged regularly (the width of the slit is narrower than the slit described below).

(2). Then, metal is supplied to form a metal layer in a line. Then, the height of the metal layer changes along the vertical direction. In one embodiment of the present invention, a resist mask or the like may be used to remove the metal layer from being formed at a portion other than the necessary portion.

(3). Based on the description of the above embodiment B , a method of manufacturing a substrate growth graphene is carried out. Then grapina grows.

(4). When all of the metal is removed, the line graphene (s) are formed.

(5). Is such that after, on top of the positions other than the linear graphene (s) formed in the substrate on the basis of the technique described in Example , the slit is linearly arranged yes arranged in parallel with the longitudinal direction of the pin (s), the slit Install a mask.

(6). Then, metal is supplied to form a metal layer. Then, the height of the metal layer changes along the lateral direction. In addition, a resist mask or the like may be suitably used to remove the metal layer from being formed on the line-shaped graphene (s). Further, a part of the line-shaped graphene (s) may remain in the metal layer by adjusting the amount of the supplied metal, the size of the slit of the slit mask, and the distance from the substrate.

(7). Thereafter, a method for manufacturing a substrate growth graphene is carried out based on the description of the above embodiment . Then, the remaining linear line graphene (s) is set as the starting position, and the plane graphene is moved in the direction orthogonal to the long direction of the slit of the slit mask, that is, perpendicular to the long direction of the linear graphene , &Lt; / RTI >

(8). (1) to (8), wherein the surface graphenes are formed when all of the metal is removed.

In one embodiment of the present invention, the method of manufacturing the substrate growth graphene is capable of controlling the starting point, direction, etc. of the growth of the graphene. Furthermore, the area of the graphene of the single crystal can be made larger than the conventional one. Of course, in one embodiment of the present invention, a small amount of polycrystals may remain with a small number of single crystals.

In one embodiment of the present invention, the beginning of the growth of graphene may occur not only at the position to be proposed in the present invention but also at an undesired position, It can be understood that the nucleation of graphene is neglected properly.

<A>

(One). The shape of the metal layer is formed so as to have a three-dimensional height in the vertical direction in a line. For example, the thickness of the metal layer is set from bottom to top, and the thickness gradually increases and rapidly returns to its original shape. That is, the metal layer is formed so as to have three-dimensional height in the vertical direction in a line. In one embodiment of the present invention, a resist mask or the like may be used to remove the metal layer from being formed at a portion other than the necessary portion.

(4). PECVD is performed.

(5). Then, with the rapid removal of the metal, the carbon that can not grow on the rapidly removed metal is grown to the graphene at a low concentration of the etching gas while maintaining high mobility. In other words, it grows as graphene in the lower part of the metal layer. Of course, in one embodiment of the present invention, the starting point of graphene growth may be nucleation of graphene at undesired locations as well as at locations to be presented in the present invention, Can be understood as neglecting the nucleation of graphene generated in the graphene.

(7). (1) to (7), wherein the metal layer is finally removed, and the line-like graphene is brought into direct contact with the surface of the substrate.

(One). After the description of the embodiment A , the shape of the metal layer is formed so as to have a three-dimensional height in the lateral direction. For example, the thickness of the metal layer is directed from right to left, and the thickness gradually increases to return to the original state. That is, the metal layer is formed so as to have a three-dimensional height in the lateral direction. In addition, a resist mask or the like may be suitably used to remove the metal layer from being formed on the line-shaped graphene. Further, by adjusting the amount of the metal to be supplied, the size of the slit of the slit mask, and the distance from the substrate, a part of the line-like graphene may remain in the metal layer.

(2). Then, on the basis of the technique described in Example <A>, growth substrate Yes performs the manufacturing method of the pin. Then, with the remaining linear graphene as the starting position, the plane graphen grows from right to left, which is perpendicular to the long direction of the linear graphene.

(3). And finally, the metal layer is completely removed and the surface graphenes are brought into direct contact with the surface of the substrate.

<C>

(One). A metal layer is provided on the substrate provided with the bend. The metal layer may be formed into two square patterns of small and large size. The two large and small square patterns can have a shape in which a first region made up of a very small square is connected to a left vertex of a second region made up of a large square.

For example, (a). (B) a first region made up of a very small square extending in parallel to the surface of the substrate and a left vertex of the second region (the apex portion widening parallel to the surface of the substrate); The center point of the first region made up of a very small square is connected to the left vertex of the second region made up of a large square having a slope (the apex portion is widened in parallel to the surface of the substrate). The thickness of the metal layer is inclined so that the first region is thinner than the second region and thicker in the second region toward the right vertex.

(2). Based on the description of the embodiment < RTI ID = 0.0 > A < / RTI > Then graphene grows in the first region, that is, near the left vertex of the large square pattern. The graphenes growing here can generally be polycrystalline. Of course, in one embodiment of the present invention, the starting point of graphene growth may be nucleation of graphene at undesired locations as well as at locations to be presented in the present invention, Can be understood as neglecting the nucleation of graphene generated in the graphene.

(3). Based on the description of Example A , at least one of the polycrystals is put into the crystal nucleus by bending near the left vertex of the large square pattern when the method of manufacturing the substrate growth graphene is continued. Therefore, the width of the bending is made sufficiently small. Then, the graphen that grows in the portion in contact with the curvature of the second region becomes a single crystal.

(4). In the present invention, graphene grows such that the single crystal is oriented as a nucleus toward the right vertex in the second region, that is, spreads in the right direction. Of course, in one embodiment of the present invention, the starting point of graphene growth may be nucleation of graphene at undesired locations as well as at locations to be presented in the present invention, Can be understood as neglecting the nucleation of graphene generated in the graphene.

(5). (1) to (5), which is composed of a graphene film and finally a plane graphene film.

In one embodiment of the present invention, the metal layer has a shape in which a first region spreading in parallel to the surface of the substrate and a second region spreading in parallel to the surface of the substrate are in contact with the curvature, The thickness of the metal layer may be thinner than the thickness of the second region and the second region may be inclined to the thickness of the metal layer so that the thickness of the metal layer becomes thicker when the second region is away from the bend. (For example, (1) a first region consisting of a very small square extending in parallel to the surface of the substrate and a left vertex of the second region (the apex portion widening parallel to the surface of the substrate) (2) The center point of the first area made up of a very small square is located at a left vertex of the second area made up of a large square having a slope (the apex part is widened in parallel to the surface of the substrate) Connected.)

<A>

(One). The metal layer is formed so as to have at least one line-shaped three-dimensional height in the vertical direction. For example, the thickness of the metal layer is set so that the thickness gradually increases from the bottom to the top, and repeats a sudden return to the original state. That is, the metal layer is formed so as to have at least one line-shaped three-dimensional height in the vertical direction. In one embodiment of the present invention, a resist mask or the like may be used to remove the metal layer from being formed at a portion other than the necessary portion.

(2). In one or more metal layers, the height of the at least one metal layer is configured to increase the concentration of the etching gas so that the metal is quickly removed, and the lower portion of the at least one metal layer is configured to have a low concentration of the etching gas.

(3). In one or more metal layers, the concentration of the carbon-containing gas is increased at the lower part of the one or more metal layers.

(4). PECVD is performed.

(5). Then, with rapid removal of the metal, the carbon that can not grow on the rapidly removed metal grows into graphene at a low concentration of at least one etching gas while maintaining high mobility. That is, grains grow from the bottom of one or more metal layers. Of course, in one embodiment of the present invention, the starting point of graphene growth may be nucleation of graphene at undesired locations as well as at locations to be presented in the present invention, Can be understood as neglecting the nucleation of graphene generated in the graphene.

(7). (1) to (7), wherein the metal layer is finally removed, and at least one linear graphene is brought into direct contact with the surface of the substrate.

(One). After the description of the embodiment A , the shape of the at least one metal layer is formed so as to have a three-dimensional height in the lateral direction. For example, the thickness of the metal layer is directed from right to left, and the thickness gradually increases to return to the original state. That is, the at least one metal layer is formed so as to have a three-dimensional height in the lateral direction. In addition, a resist mask or the like may be suitably used to remove the metal layer from being formed on the line-shaped graphene. Further, by adjusting the amount of the metal to be supplied, the size of the slit of the slit mask, and the distance from the substrate, a part of the line-like graphene may remain in the metal layer.

<C>

(One). The embodiments based on the techniques described in <A>, and one or more linearly arranged yes form the pin, and on the basis of the technique described in Example , may be one or more surfaces Yes form a pin.

(2). (1) to (2), wherein the grain boundary of the grown portion of the plane graphen grows to the side plane graphene (the portion where another linear graphene was disposed). Process can be provided.

<A>

(3). In one or more of the metal layers, the concentration distribution of the carbon-containing gas is uniformly configured.

(4). PECVD is performed.

<C>

(3). In the metal layer, the concentration distribution of the carbon-containing gas is uniformly formed.

(4). PECVD is performed.

(7). (1) to (7), wherein the metal layer is finally removed, and the graphene is brought into direct contact with the surface of the substrate.

<A>

(One). A substrate is prepared.

(5). In the metal layer, the concentration distribution of the carbon-containing gas is uniformly formed.

(6). PECVD is performed.

(One). A substrate is prepared.

(6). PECVD is performed.

<C>

(4). When all of the metal is removed, the line graphene (s) are formed.

<A>

(4). PECVD is performed.

<C>

(One). A metal layer is provided on the substrate provided with the bend. The metal layer may be formed into two square patterns of small and large size. The two large and small square patterns can have a first region composed of a very small square connected to a left vertex of a second region composed of a large square

In one embodiment of the present invention, in the process for producing a substrate growth graphene, while inert gas is not particularly described, during the process of manufacturing the substrate growth graphene, Methods can be carried out included.

In one embodiment of the present invention, in the method for producing a substrate growth graphene, hydrogen is not specifically described, but during the process for producing the substrate growth graphene, Can be performed.

In one embodiment of the present invention, setting the concentration distribution of the carbon-containing gas can be set to adjust the injection position of the carbon-containing gas.

In one embodiment of the present invention, setting the concentration distribution of the carbon-containing gas can be set to regulate the supply range of the carbon-containing gas.

In one embodiment of the present invention, setting the concentration distribution of the etching gas can be set by adjusting the injection position of the etching gas.

In one embodiment of the present invention, the setting of the concentration distribution of the etching gas can be set by adjusting the supply range of the etching gas.

In one embodiment of the present invention, the concentration distribution of the carbon-containing gas may be suitably varied (or adjusted) during the course of performing the method of manufacturing the substrate growth graphene.

In one embodiment of the present invention, the concentration distribution of the etching gas can be appropriately changed (or adjusted) during the process of manufacturing the substrate growth graphene.

In one embodiment of the present invention, the concentration distribution of the etching gas and the carbon-containing gas can be appropriately changed (or adjusted) during the process of manufacturing the substrate growth graphene.

In one embodiment of the present invention, the setting of the concentration distribution of the carbon-containing gas can be set by adjusting the partial pressure of the carbon-containing gas. Alternatively, in one embodiment of the present invention, the partial pressure of the carbon-containing gas can be adjusted by diluting the carbon-containing gas to the desired concentration in the argon gas. Alternatively, in one embodiment of the present invention, the partial pressure of the carbon-containing gas can be adjusted by diluting the carbon-containing gas to the desired concentration in the inert gas.

In one embodiment of the present invention, the carbon-containing gas may be supplied as argon.

In one embodiment of the present invention, the carbon-containing gas may be supplied as argon and hydrogen.

In one embodiment of the present invention, the concentration distribution of the etching gas is set by adjusting the partial pressure of the etching gas. In one embodiment of the present invention, the partial pressure of the etching gas can be adjusted by diluting the chlorine to a desired concentration, but is not limited thereto.

In one embodiment of the present invention, a process of forming the shape of the metal layer to have a three-dimensional height or a process of forming the thickness of the metal layer non-uniformly can be described as follows.

(One). One or more slits are formed on a metal foil or the like, and a slit mask is formed. Then, the slit mask is arranged apart from the substrate by a predetermined distance, and the metal is supplied by sputtering to reach the substrate via the slit mask. Then, the metal layer becomes thick at a portion opposed to the slit of the slit mask, and the metal layer becomes thinner as it moves away from the slit.

(2). A slit is provided on a metal foil or the like, and a slit mask is formed. When the slit mask is spaced apart from the substrate by a predetermined distance and the sputtering direction is horizontal with respect to the substrate surface, the metal layer is formed thick in the vicinity of the slit and the thickness of the metal layer Lt; / RTI >

(3). When the slit mask is spaced apart from the substrate by a predetermined distance and the sputtering direction is perpendicular to the surface of the substrate, the metal layer is formed thick in the vicinity of the slit and the thickness of the metal layer is thin Jima,

(4). It is also possible to use an obstacle instead of the slit mask by disposing the obstacle at a distance from the substrate by a predetermined distance. In this case, since the obstacle becomes an obstacle to sputtering, the metal layer becomes thinner in the vicinity of the obstacle, and the metal layer becomes thicker as it gets farther from the obstacle,

(5). In addition, when metal is supplied by sputtering, one or more movable shutters may be provided and the shutter may be closed gradually. (1) to (5), wherein the metal layer in the vicinity of the first closed portion of the shutter is thin and the metal layer in the vicinity of the closed portion at the end of the shutter is thickened. In one embodiment of the present invention, in performing the method selected from the above (1) to (5), in order to prevent a metal layer from being formed in a portion other than the necessary portion, It may be removed.

In one embodiment of the present invention, the method of manufacturing the substrate growth graphene can perform a cooling process on the formed graphene after performing the PECVD process. The cooling step is a method for uniformly growing the formed graphenes so that the graphenes can be uniformly arranged. Since rapid cooling may cause cracking of the graphene, it is preferable that the cooling step is gradually cooled at a constant speed. For example, it is possible to use a method such as natural cooling. The natural cooling is simply a removal of the heat source used for heating, and thus it is possible to obtain a sufficient cooling rate even by removing the heat source.

In one embodiment of the present invention, the method of manufacturing the substrate growth graphene may comprise further supplying a reducing gas with an etching gas and a carbon-containing gas. For example, the reducing gas may comprise hydrogen, helium, argon, or nitrogen.

In one embodiment of the present invention, in the method of manufacturing the substrate growth graphene, the etching gas may refer to an etching gas containing chlorine or chlorine. In one embodiment of the present invention, the etching gas is not limited to an etching gas containing chlorine or chlorine, and can be used as long as it is an etching gas of a metal layer capable of growing graphene.

In one embodiment of the present invention, in the method of manufacturing a substrate growth graphene, it may mean that the PECVD process and the metal layer removal (etching) process for providing graphene are performed one or more times.

In one embodiment of the present invention, in the method for producing substrate growth graphene, the carbon-containing gas may include, but is not limited to, a carbon-containing compound having from about 1 to about 10 carbon atoms. For example, the carbon-containing gas may include, but is not limited to, methane.

In an embodiment of the present invention, in the method of manufacturing the substrate growth graphene, the etching gas and the carbon-containing gas in the chamber of the PECVD apparatus are either only the etching gas and the carbon-containing gas, or an inert gas It is also possible to exist together with.

In one embodiment of the present invention, the carbon-containing gas may be meant to include an inert gas, such as argon, in addition to the compound comprising carbon. In addition, in one embodiment of the present invention, it is also possible to coexist with hydrogen gas.

In one embodiment of the present invention, the carbon-containing gas may be meant to include an inert gas, such as argon, in addition to the gas capable of forming activated carbon. In addition, in one embodiment of the present invention, it is also possible to coexist with hydrogen gas.

In one embodiment of the present invention, in the method of manufacturing a substrate growth graphene, the thickness of the metal layer may have a thickness selected from the range of from about several tens nanometers to several thousands of micrometers, but is not limited thereto.

In one embodiment of the present invention, the method of manufacturing the substrate growth graphene is performed by properly setting the supply environment of the etching gas and the carbon-containing gas and the growth environment of the graphene, Of single crystal graphene. Of course, in one embodiment of the present invention, a small amount of polycrystals may remain with a small number of single crystals.

In one embodiment of the present invention, a method of manufacturing a substrate growth graphene can be provided with a large area graphene by freely adjusting the size of the metal layer. In addition, various types of graphenes may be provided since the etching gas and the carbon-containing gas are supplied in a gaseous state (supplied in a gaseous state) and there is no restriction on the shape of the metal layer. For example, graphene having a three-dimensional solid shape may also be provided.

In one embodiment of the present invention, the method of manufacturing the substrate growth graphene can control the thickness of the graphene by appropriately adjusting the PECVD execution time, the etching execution time, and the graphen forming environment.

In one embodiment of the present invention, a method of fabricating a substrate growth graphene includes providing a metal layer on a substrate, thereafter supplying an etch gas and a carbon-containing gas, and performing a plasma enhanced chemical vapor deposition (PECVD) And removing the metal layer with an etching gas while maintaining the metal layer on the substrate; The method comprising the steps of:

In one embodiment of the present invention, in the method of manufacturing a substrate growth graphene, the substrate is provided with a thin film (or ultra thin film) after having selected one or more Piezo material, magnetic particle, Can mean one substrate. In one embodiment of the present invention, the ultra thin film may mean, but is not limited to, a thin film having a thickness of 10 micrometers or less.

In one embodiment of the invention, Piezo refers to the converse piezoelectric effect. That is, mechanical deformation occurs when an electric field is applied.

In one embodiment of the present invention, in the method for producing substrate growth graphene, the metal of the metal layer is nickel and the etching gas is chlorine; The method comprising the steps of:

In one embodiment of the present invention, a method of making a substrate growth graphene comprises

a. Loading a substrate into a deposition chamber to form a metal layer on the substrate; And

b. Loading the substrate into a PECVD chamber, providing etching gas and carbon-containing gas, and providing substrate growth graphene by PECVD; , &Lt; / RTI &

c. The substrate being sequentially loaded into the deposition chamber and the PECVD chamber using a load-locked chamber; The method comprising the steps of: Further, in one embodiment of the present invention, the method of manufacturing the substrate growth grains may further include cooling the formed substrate growth grains.

b. Selectively etching the metal layer formed on the substrate by sequentially loading the substrate into the chambers for performing selective etching; And

c. Loading the substrate into a PECVD chamber, providing etching gas and carbon-containing gas, and providing substrate growth graphene by PECVD; , &Lt; / RTI &

d. The substrate being sequentially loaded using a load-locked chamber; The method comprising the steps of: Further, in one embodiment of the present invention, the method of manufacturing the substrate growth grains may further include cooling the formed substrate growth grains.

b. Loading the substrate into a CMP chamber and performing a CMP process on the metal layer formed on the substrate; And

c. Selectively etching the metal layer formed on the substrate by sequentially loading the substrate into the chambers for performing selective etching; And

d. Loading the substrate into a PECVD chamber, providing etching gas and carbon-containing gas, and providing substrate growth graphene by PECVD; , &Lt; / RTI &

e. The substrate being sequentially loaded using a load-locked chamber; The method comprising the steps of: Further, in one embodiment of the present invention, the method of manufacturing the substrate growth grains may further include cooling the formed substrate growth grains.

In an embodiment of the present invention, in the method of manufacturing a substrate growth graphene, it is a principle that all of the metal layers are removed. However, those skilled in the art within the technical idea of the present invention, It can be said that not all of the remaining metal layer (or some metal) could be left. Therefore, in an embodiment of the present invention, it is meant that a little metal layer (or a little metal) can be left in the present invention in a broad sense in the meaning of 'all metal layers are removed'.

In one embodiment of the present invention, the method of manufacturing the substrate growth graphene may additionally comprise several steps, but basically comprises the steps of providing a metal layer, supplying an etching gas and a carbon-containing gas and maintaining a plasma chemical vapor deposition (PECVD) And a removing step of removing the metal layer with an etching gas while the metal layer is being formed on the substrate so as to grow the graphene on the substrate without the metal layer.

'' -

a. Providing a metal layer on the substrate Thereafter,

d. In the step c), plasma-enhanced chemical vapor deposition (PECVD) is continuously performed, and the metal of the metal layer is continuously removed entirely due to the etching gas, To grow graphene; of

And a method for manufacturing a substrate growth graphene.

a. Providing a metal layer on the substrate Thereafter,

d. In the step c), plasma-enhanced chemical vapor deposition (PECVD) is continuously performed, and the metal of the metal layer is continuously removed entirely due to the etching gas, Including growing graphene on the substrate; The method comprising the steps of:

In one embodiment of the present invention, in the method of manufacturing substrate growth graphene, the carbon-containing gas supply is controlled by controlling the growth direction of the graphene in the metal layer by making the concentration distribution of the carbon- ; . Of course, in one embodiment of the present invention, the starting point of graphene growth may be nucleation of graphene at undesired locations as well as at locations to be presented in the present invention, Can be understood as neglecting the nucleation of graphene generated in the graphene.

In one embodiment of the present invention, in the method of manufacturing the substrate growth graphene, the etching gas supply is performed by controlling the growth direction of the graphene by making the concentration distribution of the etching gas uneven in the metal layer; . Of course, in one embodiment of the present invention, the starting point of graphene growth may be nucleation of graphene at undesired locations as well as at locations to be presented in the present invention, Can be understood as neglecting the nucleation of graphene generated in the graphene.

In one embodiment of the present invention, in the method of manufacturing the substrate growth graphene, the metal layer has a slope in the thickness of the metal layer, and the etching gas is supplied at a higher portion of the metal layer by increasing the concentration of the etching gas, And the concentration of the etching gas is low in the lower portion of the metal layer, so that the graphene grows at a lower portion of the metal layer; . Of course, in one embodiment of the present invention, the starting point of graphene growth may be nucleation of graphene at undesired locations as well as at locations to be presented in the present invention, Can be understood as neglecting the nucleation of graphene generated in the graphene.

In one embodiment of the present invention, in the method of manufacturing a substrate growth graphene, the metal layer has a first region spreading in parallel to the surface of the substrate and a second region spreading in parallel to the surface of the substrate, The thickness of the metal layer is thinner than that of the second region and the thickness of the metal layer is inclined so that the thickness of the metal layer is increased when the second region is away from the bend that; .

In one embodiment of the invention, in the method of manufacturing substrate growth graphene, the metal layer has a slope in the thickness of the metal layer, and the carbon-containing gas supply is configured such that the concentration of the carbon- And the concentration of the carbon-containing gas in the lower portion of the metal layer is higher than that of the metal layer. The etching gas is supplied at a higher portion of the metal layer by increasing the concentration of the etching gas, The grains grow at a low level in the metal layer; . Of course, in one embodiment of the present invention, the starting point of graphene growth may be nucleation of graphene at undesired locations as well as at locations to be presented in the present invention, Can be understood as neglecting the nucleation of graphene generated in the graphene.

In one embodiment of the present invention, in the method of producing substrate growth graphene, the carbon-containing gas supply is performed in a manner such that, in the metal layer, the concentration distribution of the carbon- containing gas in the direction parallel to the surface of the substrate is uneven Thus, growing graphene in a direction parallel to the surface of the substrate; . Of course, in one embodiment of the present invention, the starting point of graphene growth may be nucleation of graphene at undesired locations as well as at locations to be presented in the present invention, Can be understood as neglecting the nucleation of graphene generated in the graphene.

In one embodiment of the present invention, in the method of manufacturing the substrate growth grains, the etching gas supply causes the concentration distribution in the direction parallel to the surface of the substrate to be uneven in the concentration distribution of the etching gas in the metal layer, Growing the graphene in a direction parallel to the surface of the graphene; . Of course, in one embodiment of the present invention, the starting point of graphene growth may be nucleation of graphene at undesired locations as well as at locations to be presented in the present invention, Can be understood as neglecting the nucleation of graphene generated in the graphene.

In one embodiment of the present invention, in the method of manufacturing the substrate growth graphene,

The carbon-containing gas supply causes the concentration distribution in the direction parallel to the surface of the substrate to be uneven in the concentration distribution of the carbon-containing gas in the metal layer,

The etching gas supply causes the concentration distribution in the direction parallel to the surface of the substrate among the concentration distribution of the etching gas to be uneven in the metal layer,

Growing graphene in a direction parallel to the surface of the substrate; . Of course, in one embodiment of the present invention, the starting point of graphene growth may be nucleation of graphene at undesired locations as well as at locations to be presented in the present invention, Can be understood as neglecting the nucleation of graphene generated in the graphene.

In one embodiment of the present invention, a method for producing a substrate growth graphene comprises the steps of <A>, , <C> &Lt; RTI ID = 0.0 > a < / RTI > substrate growth graphene.

<A>

The carbon-containing gas supply may include growing a graphene in a direction parallel to the surface of the substrate as the concentration distribution of the concentration distribution of the carbon-containing gas in the direction parallel to the surface of the substrate is uneven ; &Lt; / RTI >

Of course, in one embodiment of the present invention, the starting point of graphene growth may be nucleation of graphene at undesired locations as well as at locations to be presented in the present invention, Can be understood as neglecting the nucleation of graphene generated in the graphene.

Supplying the etching gas includes growing a graphene in a direction parallel to the surface of the substrate as the concentration distribution in the direction parallel to the surface of the substrate among the concentration distribution of the etching gas in the metal layer is made non-uniform; &Lt; / RTI >

<C>

Growing graphene in a direction parallel to the surface of the substrate; &Lt; / RTI >

Of course, in one embodiment of the present invention, the starting point of graphene growth may be nucleation of graphene at undesired locations as well as at locations to be presented in the present invention, A method of manufacturing a substrate growth graphene selected from among the above-described <A>, , and <C>, wherein the nucleation of graphene generated in the substrate is understood to be appropriately ignored Respectively. Further, in one embodiment of the present invention, the present invention provides a method for manufacturing a substrate growth graphene selected from the above-described <A>, , <C> CC < > >.

<A-A>

Linear graphenes which grow in a first direction parallel to the surface of the substrate and are in direct contact with the surface are produced by the method for producing a substrate growth graft described in the above described <A>,

Preparing surface graphenes growing in a second direction parallel to the surface from the line graphene and in direct contact with the surface by the method for producing a substrate growth graphene described in the above <A>; A method for producing a substrate growth graphene

<B-B>

Linear graphenes which grow in a first direction parallel to the surface of the substrate and are in direct contact with the surface are produced by the method for producing a substrate growth graft described in above,

Preparing plane grains that grow from the linear graphene in a second direction parallel to the surface and are in direct contact with the surface by the method of manufacturing the substrate growth graphenes described in above; A method for producing a substrate growth graphene

&Lt; C-C &

Linear graphenes which grow in a first direction parallel to the surface of the substrate and are in direct contact with the surface are produced by the method for producing a substrate growth graft described in <C>

Preparing surface graphenes growing in a second direction parallel to the surface from the linear graphenes and in direct contact with the surface by the method for producing substrate graphenes described in the above < C >; And a method for producing a substrate growth graphene comprising the steps of: (a) preparing a substrate growth graphene comprising the steps of: In an embodiment of the present invention, the present invention further comprises cooling the line graphene, further comprising cooling the plane graphene; The method comprising the steps of:

In an embodiment of the present invention, in the method for producing substrate growth graphene, the metal of the metal layer is iron, nickel, cobalt or an alloy containing them, and the etching gas is chlorine; .

In one embodiment of the present invention, a method of manufacturing a substrate growth graphene comprises:

c. The substrate being sequentially loaded into the deposition chamber and the PECVD chamber using a load-locked chamber; The method comprising the steps of: Further, in an embodiment of the present invention, the present invention further comprises cooling the substrate growth graphene provided on the substrate; The method comprising the steps of:

d. The substrate being sequentially loaded using a load-locked chamber; The method comprising the steps of: Further, in an embodiment of the present invention, the present invention further comprises cooling the substrate growth graphene provided on the substrate; The method comprising the steps of:

e. The substrate being sequentially loaded using a load-locked chamber; The method comprising the steps of: In one embodiment of the present invention, the present invention further comprises cooling the substrate growth graphene provided on the substrate; The method comprising the steps of:

In one embodiment of the present invention, a method of manufacturing substrate growth graphene further comprises cooling the graphene grown on the substrate; The method comprising the steps of:

a. Forming a metal layer on the substrate such that the shape of the metal layer formed on the substrate is inclined to the thickness of the metal layer;

b. Forming a metal layer on the upper portion of the metal layer so as to increase the concentration of the etching gas so as to rapidly remove the metal layer and lower the concentration of the etching gas in the metal layer;

c. In the metal layer, constituting a concentration distribution of the carbon-containing gas uniformly, and

d. Performing PECVD, and

e. With rapid removal of the metal, the carbon that can not grow on the rapidly removed metal is grown to graphene at a low concentration of the etching gas, i.e., at a low position of the metal layer, while maintaining high mobility , The starting point of graphene growth may be nucleation of graphene at an undesired position as well as at a position to be proposed in the present invention, It can be understood that the nucleation of the pin is properly ignored), and

f. Continuing the etching while maintaining PECVD, growing carbon so as to form a crystal structure with the already grown graphene, and

g. The growth direction of graphene is a step in which graphen grows from a low place to a high place in the metal layer, and

h. Finally removing all of the metal layer and bringing the graphene directly into contact with the surface of the substrate; To

The method of manufacturing a substrate growth grapnn comprises the steps of:

c. Increasing the concentration of the carbon-containing gas at a lower portion of the metal layer in the metal layer, and

d. Performing PECVD, and

The method of manufacturing a substrate growth grapnn comprises the steps of:

b. So that the etching gas is uniformly injected to uniformly remove the metal layer, and

d. Performing PECVD, and

e. With the removal of the metal, the carbon that can not grow on the metal to be removed is grown to graphene at a high concentration of carbon-containing gas, i.e., at a lower portion of the metal layer, while maintaining high mobility , The starting point of graphene growth may be nucleation of graphene at an undesired position as well as at a position to be proposed in the present invention, It can be understood that the nucleation of the pin is properly ignored), and

The method of manufacturing a substrate growth grapnn comprises the steps of:

In one embodiment of the present invention, in the method of manufacturing the substrate growth graphene, the etching gas supply of the metal may be performed prior to performing the PECVD, so that the present invention performs PECVD during the etching of the metal A method of manufacturing a substrate growth graphen may be provided.

In one embodiment of the present invention, in the method of manufacturing the substrate growth graphene, the etching gas supply of the metal may be performed before supplying the carbon-containing gas, and thus, And a method of manufacturing a substrate growth graphene for supplying a carbon-containing gas.

In one embodiment of the present invention, a method of manufacturing a substrate growth graphene further comprises cooling the graphene directly contacting the surface of the substrate; The method comprising the steps of:

Linear graphenes growing in a first direction parallel to the surface of the substrate and directly in contact with the surface are manufactured by a method for producing a substrate growth graphene,

Preparing surface graphenes growing in a second direction parallel to the surface from the linear graphenes and in direct contact with the surface by a method of manufacturing a substrate growth graphene; The method comprising the steps of:

In one embodiment of the present invention, a method of manufacturing a substrate growth graphene further comprises cooling the line graphene, further comprising cooling the plane graphene; The method comprising the steps of:

In one embodiment of the present invention, the present invention provides a method of fabricating a substrate having a substrate growth graphene,

The substrate growth graphene directly contacts the surface of the substrate,

The grain size of the grains in the first direction of the substrate growth grains is larger than that in a direction perpendicular to the surface of the grains; &Lt; / RTI >

The substrate growth graphene directly contacts the surface of the substrate,

The substrate growth graphene having a grain boundary along a second direction parallel to the surface; &Lt; / RTI > In one embodiment of the present invention, the present invention is characterized in that the first direction and the second direction are orthogonal; &Lt; / RTI >

The substrate growth graphene directly contacts the surface of the substrate,

The substrate growth graphene having a plurality of grain boundaries in a second direction parallel to the surface; &Lt; / RTI > In one embodiment of the present invention, the present invention is characterized in that the first direction and the second direction are orthogonal; &Lt; / RTI >

In one embodiment of the present invention,

a. Providing a metal layer on the substrate Thereafter,

d. In the step c), plasma-enhanced chemical vapor deposition (PECVD) is continuously performed, and the metal of the metal layer is continuously removed entirely due to the etching gas, Including growing graphene on the substrate; The method comprising the steps of: Further, in one embodiment of the present invention, the present invention includes graphene obtained by the above-described method for producing a substrate growth graphene.

In one embodiment of the present invention, a method of making a substrate growth graphene comprises the method of making a substrate growth graphene described as being selected from the following <A>, :

<A>

In one embodiment of the present invention,

Supplying and ejecting an etching gas and a carbon-containing gas, and

Performing Plasma-Enhanced Chemical Vapor Deposition (PECVD), and

Continuous plasma-enhanced chemical vapor deposition (PECVD) is performed, in which the metal of the metal layer is continuously removed entirely due to the etching gas to grow graphene on the substrate without the metal layer Including steps; The method comprising the steps of:

In one embodiment of the present invention,

a. Positioning a substrate provided with a metal layer,

d. In the step c), plasma-enhanced chemical vapor deposition (PECVD) is continuously performed, and the metal of the metal layer is continuously removed entirely due to the etching gas, Including growing graphene on the substrate; And a method of manufacturing a substrate growth graphen comprising the steps of: (a) preparing a substrate growth graphene comprising the steps of: Further, in one embodiment of the present invention, the present invention includes graphene obtained by the above-described method of producing substrate growth grains selected from <A> and .

In one embodiment of the present invention,

Providing a metal layer on a substrate; And

Positioning the substrate into a PECVD chamber; And

Supplying and ejecting an etching gas and a carbon-containing gas; And

Performing Plasma Enhanced Chemical Vapor Deposition (PECVD); And

Continuous plasma-enhanced chemical vapor deposition (PECVD) is performed, in which the metal of the metal layer is continuously removed entirely due to the etching gas to grow graphene on the substrate without the metal layer step; And

Cooling graphene grown on the substrate; The method of manufacturing a substrate growth grapnn comprises the steps of:

In one embodiment of the present invention,

Providing a metal layer on the substrate, and

Sequentially loading and selectively etching the metal layers into the chambers for selective etching, and

Positioning the substrate with the selectively etched metal layer into a PECVD chamber, and

Supplying and ejecting an etching gas and a carbon-containing gas, and

Performing Plasma-Enhanced Chemical Vapor Deposition (PECVD), and

Continuous plasma-enhanced chemical vapor deposition (PECVD) is performed, in which the metal of the metal layer is continuously removed entirely due to the etching gas to grow graphene on the substrate without the metal layer Step, and

Cooling the grown graphene on the substrate, and

Sequentially loading and patterning the chambers for patterning the graphene subjected to the cooling step; The method of manufacturing a substrate growth grapnn comprises the steps of:

In one embodiment of the present invention,

Providing a metal layer on the substrate, and

Selectively etching the metal layer, and

Supplying and ejecting an etching gas and a carbon-containing gas, and

Performing Plasma-Enhanced Chemical Vapor Deposition (PECVD), and

Cooling the grown graphene on the substrate, and

Patterning the graphene having undergone the cooling step; The method of manufacturing a substrate growth grapnn comprises the steps of:

In one embodiment of the present invention, the step of patterning the graphene

It is possible to use graphene, which is available and known in the prior art of applicants, which may be included in the step of patterning the graphene, without intention in the step of patterning the graphene presented herein as a method selected from among several methods of patterning graphene.

In one embodiment of the present invention, the present invention comprises a substrate comprising a metal layer and a graphene formed by the method of manufacturing a substrate growth graphene. Here, the substrate including the metal layer can be widely understood as a substrate having a metal layer.

In one embodiment of the present invention, the present invention includes an electronic component including the graphene disclosed in one embodiment of the present invention.

In one embodiment of the present invention, the present invention comprises graphene obtained by a process for producing a substrate growth graphene.

In one embodiment of the present invention, the present invention comprises an electronic component comprising graphene obtained by a method for producing a substrate growth graphene.

In one embodiment of the present invention, the present invention comprises a method of manufacturing an electronic component, characterized by comprising a method of manufacturing a substrate growth graphene.

In one embodiment of the present invention, a method of manufacturing an electronic component may mean a method of manufacturing a transistor, but the present invention is not limited thereto.

In one embodiment of the present invention, a manufacturing method of an electronic component may mean a manufacturing method of a central processing unit (CPU).

In one embodiment of the present invention, a method of manufacturing an electronic component may refer to a method of manufacturing a memory.

In one embodiment of the present invention, the present invention provides an electronic component comprising the method of manufacturing an electronic component, comprising the method of manufacturing a substrate growth graphene.

In one embodiment of the present invention, the present invention comprises an electronic component comprising a substrate growth graphene.

In one embodiment of the present invention, the electronic component may refer to a transistor, but is not limited thereto.

In one embodiment of the present invention, a transistor means a transistor including a graphen transistor.

In one embodiment of the present invention, the electronic component may mean a central processing unit (CPU).

In one embodiment of the present invention, the electronic component may refer to a memory.

''

Here, "to be described" means "to be enumerated or described and described as it is with the contents and features of the object or process".

The present invention has been described as an upper group, a group, a range of a group, a lower range of a group, and an inclusion range of a group.

Advantages and features of the present invention and methods for accomplishing the same will become apparent with reference to the embodiments described in detail in the foregoing. However, the present invention is not limited to the embodiments described in detail, but may be embodied in various forms.

In one embodiment of the present invention, generally known methods, generally known mathematical formulas, generally known laws, generally known descriptions, generally known sequences and generally known techniques, The present invention can be applied to an embodiment of the present invention which is widely disclosed without relying on the use of the present invention.

In one embodiment of the present invention, methods, orders, and techniques that are known in the art, such as those specifically known to those skilled in the art, are not intended to be applied to the embodiments of the present invention.

Those skilled in the art will readily appreciate that a person skilled in the art will be able to carry out the invention without departing from the scope of the present invention, It will be appreciated that the invention is feasible.

The terms and expressions which have been employed herein are used as terms of the detailed description of the invention but are not intended to be limiting and are not intended to limit the terms or expressions of the described or illustrated features. However, various modifications are possible within the scope of the present invention. It is, therefore, to be understood that the exemplary embodiments and optional features, as well as modifications and variations of the concepts described herein, may be resorted to by the prior art and the like, even though the invention has been described by some preferred embodiments, Variations may be considered within the scope of the invention as defined by the appended claims.

In one embodiment of the present invention, the specific embodiments provided are illustrative of useful embodiments of the present invention, and those of ordinary skill in the art should understand that changes may be made to the elements, As will be appreciated by those skilled in the art.

Those skilled in the art will appreciate that in one embodiment of the invention particular embodiments of the invention may be used including various optional configurations and methods and steps.

The specific nomenclature of the components described or illustrated herein may be resorted to as an example, insofar as those of ordinary skill in the art to which the invention pertains may specifically refer to the specific names of the same components. Accordingly, the specific names of the components described or illustrated herein should be understood based on the overall description of the invention as set forth.

In one embodiment of the present invention, it is contemplated that combinations of the described or described groups of the present invention may be used to practice the present invention, if not otherwise stated.

In one embodiment of the present invention, combinations of the groups described or described that may be included in a higher group of the present invention may be used within a higher group of the present invention, unless otherwise stated.

In an embodiment of the present invention, individual values that may be included in the scope of the group described or described above as well as when the scope of the group described or described is given in detail may be used in the scope of the above described or described group.

In an embodiment of the present invention, combinations of groups that can be included in the scope of the groups described or described above, as well as when the scope of the groups described or described is given in detail, may be used in the scope of the groups described or described above .

In an embodiment of the present invention, when a range of the described or described group is given in detail, a group which can be included in the range of the above described or described group can be used in the range of the above described or described group.

In one embodiment of the present invention, equivalently known components or variants of the components described or illustrated can be used to practice the invention without intending to be mentioned otherwise.

In one embodiment of the present invention, the contents of the present invention have been described at the level of those skilled in the art.

In one embodiment of the invention, the description set forth in the context of groups, ranges of groups, sub-ranges of groups, and ranges of groups can be realized within the scope of the description of a possible higher group of the invention.

Those skilled in the art will appreciate that the various ways of practicing the invention may be employed in the practice of the invention without undue experimentation.

Further, those skilled in the art will appreciate that those skilled in the art can make and use the embodiments of the present invention in the context of the present invention, which is fully capable of describing the group, the scope of the group, the sub-scope of the group, You can see that it can be.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, the invention is not limited to the disclosed exemplary embodiments. It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit and scope of the invention.

It is also to be understood that the present invention which is properly illustrated schematically is merely illustrative and that those skilled in the art will appreciate that various modifications and equivalent embodiments are possible without departing from the scope of the present invention . Accordingly, the true scope of the present invention should be determined by the technical idea of the appended claims.

In one embodiment of the present invention, methods known equivalently to the described methods may be used in an embodiment of the present invention without intending to do so. .............

100: substrate
200: metal layer
300: Carbon-containing gas
310: Etching gas of metal
500: Grain Pins
1001: Graphene device
1002: Graphene
1003: substrate
1600: Etching gas introduction direction
3001: Slit mask
3002: slit
3005: metal direction supplied by sputtering

Claims

a. Providing a metal layer on the substrate Thereafter,
b. An etching gas and a carbon-containing gas are supplied and plasma-enhanced chemical vapor deposition (PECVD) is performed,
c. Supplying an etchant gas of a metal together in the carbon-containing gas supply, growing graphene on the metal layer,
d. In the step c), plasma-enhanced chemical vapor deposition (PECVD) is continuously performed, and the metal of the metal layer is continuously removed entirely due to the etching gas, Including growing graphene on the substrate; of
Characterized by a method for producing a substrate grown graphene

The method according to claim 1,
The carbon-containing gas supply
In the metal layer, the concentration distribution of the carbon-containing gas is made non-uniform,
Controlling the growth direction of graphene; of
Characterized by a method for producing a substrate grown graphene

The method according to claim 1,
The etching gas supply
In the metal layer, the concentration distribution of the etching gas is made non-uniform,
Controlling the growth direction of graphene; of
Characterized by a method for producing a substrate grown graphene

The method according to claim 1,
Wherein the metal layer has a slope in the thickness of the metal layer,
The etching gas is supplied in such a manner that the metal is rapidly removed by raising the concentration of the etching gas at a high portion of the metal layer and the concentration of the etching gas is low at the low portion of the metal layer,
The growth of graphene at the bottom of the metal layer; of
Characterized by a method for producing a substrate grown graphene

The method of claim 4,
Wherein the metal layer has a shape in which a first region extending in parallel to the surface of the substrate and a second region extending in parallel to the surface of the substrate are in contact with the bend, The second region being sloped with respect to the thickness of the metal layer so that the thickness of the metal layer becomes thicker when the second region is away from the bend; of
Method of manufacturing substrate growth graphene by feature

The method according to claim 1,
Wherein the metal layer has a slope in the thickness of the metal layer,
The carbon-containing gas supply is configured such that the concentration of the carbon-containing gas is high at the upper portion of the metal layer, the concentration of the carbon-containing gas at the lower portion of the metal layer is high,
The etching gas is supplied in such a manner that the metal is rapidly removed by raising the concentration of the etching gas at a high portion of the metal layer and the concentration of the etching gas is low at the low portion of the metal layer,
The growth of graphene at the bottom of the metal layer; of
Characterized by a method for producing a substrate grown graphene

The method of claim 6,
Wherein the metal layer has a shape in which a first region extending in parallel to the surface of the substrate and a second region extending in parallel to the surface of the substrate are in contact with the bend, The second region being sloped with respect to the thickness of the metal layer so that the thickness of the metal layer becomes thicker when the second region is away from the bend; of
Method of manufacturing substrate growth graphene by feature

The method according to claim 1,
Wherein the carbon-containing gas supply is performed such that grains are grown in a direction parallel to the surface of the substrate as the concentration distribution of the carbon-containing gas in the direction parallel to the surface of the substrate among the concentration distribution of the carbon- To do; of
Characterized by a method for producing a substrate grown graphene

The method according to claim 1,
The etching gas supply may include growing a graphene in a direction parallel to a surface of the substrate in the metal layer by causing a concentration distribution in a direction parallel to the surface of the substrate among the concentration distribution of the etching gas to be uneven; of
Characterized by a method for producing a substrate grown graphene

The method according to claim 1,
Wherein the carbon-containing gas supply is performed such that the concentration distribution in the direction parallel to the surface of the substrate among the concentration distribution of the carbon-containing gas in the metal layer is uneven,
The etching gas supply may cause a concentration distribution in a direction parallel to the surface of the substrate among the concentration distribution of the etching gas to be uneven in the metal layer,
Growing graphene in a direction parallel to the surface of the substrate; of
Characterized by a method for producing a substrate grown graphene

The method according to claim 1,
The metal of the metal layer is iron, nickel, cobalt, or an alloy containing them,
The etching gas is chlorine; of
Characterized by a method for producing a substrate grown graphene

a. Loading a substrate into a deposition chamber to form a metal layer on the substrate; And
b. Loading the substrate into a PECVD chamber, providing etching gas and carbon-containing gas, and providing substrate growth graphene by PECVD; , &Lt; / RTI &
c. The substrate being sequentially loaded into the deposition chamber and the PECVD chamber using a load-locked chamber; of
Characterized by a method for producing a substrate grown graphene

a. Loading a substrate into a deposition chamber to form a metal layer on the substrate; And
b. Selectively etching the metal layer formed on the substrate by sequentially loading the substrate into the chambers for performing selective etching; And
c. Loading the substrate into a PECVD chamber, providing etching gas and carbon-containing gas, and providing substrate growth graphene by PECVD; , &Lt; / RTI &
d. The substrate being sequentially loaded using a load-locked chamber; of
Characterized by a method for producing a substrate grown graphene

a. Loading a substrate into a deposition chamber to form a metal layer on the substrate; And
b. Loading the substrate into a CMP chamber and performing a CMP process on the metal layer formed on the substrate; And
c. Loading the substrate into a PECVD chamber, providing etching gas and carbon-containing gas, and providing substrate growth graphene by PECVD; , &Lt; / RTI &
d. The substrate being sequentially loaded using a load-locked chamber; of
Characterized by a method for producing a substrate grown graphene

a. Loading a substrate into a deposition chamber to form a metal layer on the substrate; And
b. Loading the substrate into a CMP chamber and performing a CMP process on the metal layer formed on the substrate; And
c. Selectively etching the metal layer formed on the substrate by sequentially loading the substrate into the chambers for performing selective etching; And
d. Loading the substrate into a PECVD chamber, providing etching gas and carbon-containing gas, and providing substrate growth graphene by PECVD; , &Lt; / RTI &
e. The substrate being sequentially loaded using a load-locked chamber; of
Characterized by a method for producing a substrate grown graphene

The method according to claim 1,
Further comprising cooling the grown graphene on the substrate; of
Characterized by a method for producing a substrate grown graphene

a. Forming a metal layer on the substrate such that the shape of the metal layer formed on the substrate is inclined to the thickness of the metal layer;
b. Forming a metal layer on the upper portion of the metal layer so as to increase the concentration of the etching gas so as to rapidly remove the metal layer and lower the concentration of the etching gas in the metal layer;
c. In the metal layer, constituting a concentration distribution of the carbon-containing gas uniformly, and
d. Performing PECVD, and
e. A step of growing into graphene at a low concentration of the etching gas, that is, at a lower portion of the metal layer, while maintaining the high mobility of the carbon which can not grow on the rapidly removed metal,
f. Continuing the etching while maintaining PECVD, growing carbon so as to form a crystal structure with the already grown graphene, and
g. The growth direction of graphene is a step in which graphen grows from a low place to a high place in the metal layer, and
h. Finally removing all of the metal layer and bringing the graphene directly into contact with the surface of the substrate; To
A method for producing a substrate growth graphene comprising:

a. Forming a metal layer on the substrate such that the shape of the metal layer formed on the substrate is inclined to the thickness of the metal layer;
b. Forming a metal layer on the upper portion of the metal layer so as to increase the concentration of the etching gas so as to rapidly remove the metal layer and lower the concentration of the etching gas in the metal layer;
c. Increasing the concentration of the carbon-containing gas at a lower portion of the metal layer in the metal layer, and
d. Performing PECVD, and
e. A step of growing into graphene at a low concentration of the etching gas, that is, at a lower portion of the metal layer, while maintaining the high mobility of the carbon which can not grow on the rapidly removed metal,
f. Continuing the etching while maintaining PECVD, growing carbon so as to form a crystal structure with the already grown graphene, and
g. The growth direction of graphene is a step in which graphen grows from a low place to a high place in the metal layer, and
h. Finally removing all of the metal layer and bringing the graphene directly into contact with the surface of the substrate; To
A method for producing a substrate growth graphene comprising:

a. Forming a metal layer on the substrate such that the shape of the metal layer formed on the substrate is inclined to the thickness of the metal layer;
b. So that the etching gas is uniformly injected to uniformly remove the metal layer, and
c. Increasing the concentration of the carbon-containing gas at a lower portion of the metal layer in the metal layer, and
d. Performing PECVD, and
e. Growing the graphene at a high concentration of carbon-containing gas, that is, at a lower portion of the metal layer, while maintaining the high mobility of the carbon which can not grow on the metal to be removed by the removal of the metal; and
f. Continuing the etching while maintaining PECVD, growing carbon so as to form a crystal structure with the already grown graphene, and
g. The growth direction of graphene is a step in which graphen grows from a low place to a high place in the metal layer, and
h. Finally removing all of the metal layer and bringing the graphene directly into contact with the surface of the substrate; To
A method for producing a substrate growth graphene comprising:

The method according to any one of claims 17 to 19,
Wherein the metal layer has a shape in which a first region extending in parallel to the surface of the substrate and a second region extending in parallel to the surface of the substrate are in contact with the bend, The second region being sloped with respect to the thickness of the metal layer so that the thickness of the metal layer becomes thicker when the second region is away from the bend; of
Method of manufacturing substrate growth graphene by feature

A linear graphene growing in a first direction parallel to the surface of the substrate and directly in contact with the surface is produced by the method for producing a substrate growth graft according to claim 8,
Preparing surface graphenes growing in a second direction parallel to the surface from the line graphene and directly contacting the surface by the method for producing a substrate growth graphene according to claim 8; of
Characterized by a method for producing a substrate grown graphene

Linear graphenes growing in a first direction parallel to the surface of the substrate and directly in contact with the surface are produced by the method for producing a substrate growth graft according to claim 9,
Preparing surface graphenes growing in a second direction parallel to the surface from the line graphene and directly contacting the surface by the method of manufacturing the substrate growth graphenes according to claim 9; of
Characterized by a method for producing a substrate grown graphene

A linear graphene growing in a first direction parallel to the surface of the substrate and in direct contact with the surface is produced by the method for producing a substrate growth graft according to claim 10,
Preparing surface graphenes growing in a second direction parallel to the surface from the line graphene and directly contacting the surface by the method for producing a substrate growth graphene according to claim 10; of
Characterized by a method for producing a substrate grown graphene

The method according to any one of claims 21 to 23,
Further comprising the step of cooling said line graphene,
Further comprising cooling said planar graphene; of
Characterized by a method for producing a substrate grown graphene

With substrate growth graphene,
The substrate growth graphene directly contacts the surface of the substrate,
The crystal grain size in the first direction parallel to the surface of the substrate growth graphene is larger than the crystal grain size in any other direction parallel to the surface of the substrate growth graphene,
The grain size of the grains in the first direction of the substrate growth grains is larger than that in a direction perpendicular to the surface of the grains; of
A substrate growth graphene characterized

With substrate growth graphene,
The substrate growth graphene directly contacts the surface of the substrate,
Wherein the substrate growth graphene has a grain boundary along a first direction parallel to the surface,
The substrate growth graphene having a grain boundary along a second direction parallel to the surface; of
A substrate growth graphene characterized

26. The method of claim 26,
The first direction and the second direction being orthogonal; of
A substrate growth graphene characterized

With substrate growth graphene,
The substrate growth graphene directly contacts the surface of the substrate,
Wherein the substrate growth graphene has a plurality of crystal grain boundaries along a first direction parallel to the surface,
The substrate growth graphene having a plurality of grain boundaries in a second direction parallel to the surface; of
A substrate growth graphene characterized

29. The method of claim 28,
The first direction and the second direction being orthogonal; of
A substrate growth graphene characterized

The graphene obtained by the method for producing a substrate-grown graphene according to claim 1

An electronic device comprising the graphene according to claim 30

A method of manufacturing an electronic component characterized by comprising a method for manufacturing a substrate growth graphene according to claim 1, claim 17, claim 18, claim 19, claim 21, claim 22 or claim 23

A method of manufacturing an electronic component, comprising the method of manufacturing a substrate growth graphene according to claim 1, claim 17, claim 18, claim 19, claim 21, claim 22 or claim 23 An electronic component

Characterized in that it comprises a substrate growth graphene according to claim 25, claim 26 or claim 28

Supplying and ejecting an etching gas and a carbon-containing gas, and
Performing Plasma-Enhanced Chemical Vapor Deposition (PECVD), and
Continuous plasma-enhanced chemical vapor deposition (PECVD) is performed, in which the metal of the metal layer is continuously completely removed due to the etching gas, and graphene is grown on the substrate without the metal layer Including steps; of
Characterized by a method for producing a substrate grown graphene

a. Positioning a substrate provided with a metal layer,
b. An etching gas and a carbon-containing gas are supplied and plasma-enhanced chemical vapor deposition (PECVD) is performed,
c. Supplying an etchant gas of a metal together in the carbon-containing gas supply, growing graphene on the metal layer,
d. In the step c), plasma-enhanced chemical vapor deposition (PECVD) is continuously performed, and the metal of the metal layer is continuously removed entirely due to the etching gas, Including growing graphene on the substrate; of
Characterized by a method for producing a substrate grown graphene

A method for producing a substrate growth graphene according to any one of claims 35 to 36,

Substrate comprising a metal layer and graphene formed by the method of manufacturing a substrate growth graphene

A method of manufacturing an electronic component, characterized by comprising a method of manufacturing a substrate growth graphene according to any one of claims 35 to 36

An electronic device comprising the graphene according to any one of claims 37 to 38

Providing a metal layer on the substrate, and
Selectively etching the metal layer, and
Positioning the substrate with the selectively etched metal layer into a PECVD chamber, and
Supplying and ejecting an etching gas and a carbon-containing gas, and
Performing Plasma-Enhanced Chemical Vapor Deposition (PECVD), and
Continuous plasma-enhanced chemical vapor deposition (PECVD) is performed, in which the metal of the metal layer is continuously completely removed due to the etching gas, and graphene is grown on the substrate without the metal layer Step, and
Cooling the grown graphene on the substrate, and
Patterning the graphene having undergone the cooling step; To
&Lt; / RTI >