KR20160104853A - Manufacturing method of substrate graphene growth without using metal catalyst and substrate graphene growth without using metal catalyst - Google Patents
Manufacturing method of substrate graphene growth without using metal catalyst and substrate graphene growth without using metal catalyst Download PDFInfo
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- KR20160104853A KR20160104853A KR1020150027676A KR20150027676A KR20160104853A KR 20160104853 A KR20160104853 A KR 20160104853A KR 1020150027676 A KR1020150027676 A KR 1020150027676A KR 20150027676 A KR20150027676 A KR 20150027676A KR 20160104853 A KR20160104853 A KR 20160104853A
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- C01B32/00—Carbon; Compounds thereof
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- C01B32/182—Graphene
- C01B32/184—Preparation
- C01B32/186—Preparation by chemical vapour deposition [CVD]
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
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- C01B32/182—Graphene
- C01B32/184—Preparation
- C01B32/188—Preparation by epitaxial growth
Abstract
According to the present invention,
a. A substrate having a substrate layer formed thereon,
b. Supplying a carbon-containing gas and performing plasma-enhanced chemical vapor deposition (PECVD)
c. In a heteroepitaxial growth type of van der Waals type nucleated on the surface of the substrate layer, adsorbing, diffusing, and the like of hydrocarbon radicals, Including growing graphene on a substrate layer; The present invention also provides a method for producing graphene without catalyst.
Further, according to the present invention,
a. A substrate having a substrate layer formed thereon,
b. Supplying a carbon-containing gas and performing plasma-enhanced chemical vapor deposition (PECVD)
c. In the growth type of van der Waals type which is generated nuclei on the surface of the substrate layer by adsorbing, diffusing and the hydrocarbon radicals, graphene is deposited on the substrate layer without the catalyst layer Including growing; The present invention also provides a method for producing graphene without catalyst.
In addition, the present invention provides a method for producing graphene grown on a non-catalyst substrate ...
In addition,
With non-catalytic substrate growth graphene,
The non-catalyst substrate growth graphene directly contacts the surface of the substrate layer,
The crystal grain size in the first direction parallel to the surface of the non-catalyst substrate growth graphene is larger than the crystal grain size in any other direction parallel to the surface of the non-catalyst substrate growth graphene,
The grains in the first direction of the non-catalyst substrate growth grains are larger than the grains in the direction perpendicular to the surface of the grains; ≪ RTI ID = 0.0 > a < / RTI >
In addition,
With non-catalytic substrate growth graphene,
The noncatalytic substrate growth graphene directly contacts the surface of the substrate layer,
Wherein said non-catalytic substrate growth graphene has a grain boundary along a first direction parallel to said surface,
The corresponding noncatalytic substrate growth graphene having a grain boundary along a second direction parallel to the surface; ≪ RTI ID = 0.0 > a < / RTI >
In addition,
With non-catalytic substrate growth graphene,
The noncatalytic substrate growth graphene directly contacts the surface of the substrate layer,
The non-catalytic substrate-grown graphene has a plurality of grain boundaries along a first direction parallel to the surface,
The corresponding noncatalytic substrate growth graphene having a plurality of crystal grain boundaries along a second direction parallel to the surface; ≪ RTI ID = 0.0 > a < / RTI >
Description
TECHNICAL FIELD The present invention relates to a method for producing an uncatalyzed substrate-grown graphene, an uncatalyzed substrate-grown graphene, and an electronic component including the same.
Graphene is a hexagonal material consisting of a single layer of carbon atoms, which transports
In addition, graphene has been extensively studied in the fields of electricity, electronics, etc. worldwide due to its unique properties such as high electron mobility.
For such a method of producing graphene (a method of growing graphene), a growth method using a catalyst layer is mainly used.
Graphene produced by the conventional technique becomes a heterogeneous polycrystalline film randomly growing crystal grains since crystals randomly grow from the catalyst metal. Therefore, there is a demand for a technique of producing a single crystal graphene as large as possible by limiting the growth of grain boundaries to desired positions by controlling the growth of graphene.
Further, since the graphene growth method using the catalytic metal once forms graphene, the metal of the catalyst is sandwiched between the graphene and the substrate. Therefore, the metal removal requires a lot of effort and is easy to remove completely It is not.
In addition, a method of transferring graphene rather than a method of growing graphene is likely to cause defects when transferring graphene.
Therefore, there is a need for a technique for producing graphene directly on the surface of a substrate, without catalyst metal, on the substrate.
SUMMARY OF THE INVENTION The present invention has been devised to solve the problems as described above, and it is an object of the present invention to provide a method for manufacturing a non-catalyst substrate-grown graphene, a non-catalyst substrate-grown graphene and an electronic component including the same.
Therefore, in order to solve the above-described problem, the present invention requires a technique for manufacturing graphene that directly contacts the surface of a substrate without a catalyst metal on the substrate. For that reason,
a. A substrate having a substrate layer formed thereon,
b. Supplying a carbon-containing gas and performing plasma-enhanced chemical vapor deposition (PECVD)
c. In a heteroepitaxial growth type of van der Waals type nucleated on the surface of the substrate layer, adsorbing, diffusing, and the like of hydrocarbon radicals, Including growing graphene on a substrate layer; And a method for producing the graphene grains is disclosed.
Further, according to the present invention,
a. A substrate having a substrate layer formed thereon,
b. Supplying a carbon-containing gas and performing plasma-enhanced chemical vapor deposition (PECVD)
c. In the growth type of van der Waals type which is generated nuclei on the surface of the substrate layer by adsorbing, diffusing and the hydrocarbon radicals, graphene is deposited on the substrate layer without the catalyst layer Including growing; And a method for producing the graphene grains is disclosed.
The present invention also provides a method for producing graphene grown on a non-catalyst substrate.
In addition,
With non-catalytic substrate growth graphene,
The non-catalyst substrate growth graphene directly contacts the surface of the substrate layer,
The crystal grain size in the first direction parallel to the surface of the non-catalyst substrate growth graphene is larger than the crystal grain size in any other direction parallel to the surface of the non-catalyst substrate growth graphene,
The grains in the first direction of the non-catalyst substrate growth grains are larger than the grains in the direction perpendicular to the surface of the grains; The present invention relates to a non-catalytic substrate growth graphene.
In addition,
With non-catalytic substrate growth graphene,
The noncatalytic substrate growth graphene directly contacts the surface of the substrate layer,
Wherein said non-catalytic substrate growth graphene has a grain boundary along a first direction parallel to said surface,
The corresponding noncatalytic substrate growth graphene having a grain boundary along a second direction parallel to the surface; The present invention relates to a non-catalytic substrate growth graphene.
In addition,
With non-catalytic substrate growth graphene,
The noncatalytic substrate growth graphene directly contacts the surface of the substrate layer,
The non-catalytic substrate-grown graphene has a plurality of grain boundaries along a first direction parallel to the surface,
The corresponding noncatalytic substrate growth graphene having a plurality of crystal grain boundaries along a second direction parallel to the surface; The present invention relates to a non-catalytic substrate growth graphene.
The present invention provides a method for producing graphene without growth of a catalyst.
The present invention also provides a non-catalyst substrate grown graphene.
The present invention also provides a method for producing a non-catalyst substrate-grown graphene, a non-catalyst substrate-grown graphene, and an electronic component including the same.
1
1,
(One). A substrate having a substrate layer formed thereon,
(2). Supplying a carbon-containing gas and performing plasma-enhanced chemical vapor deposition (PECVD)
(3-4). In a heteroepitaxial growth type of van der Waals type nucleated on the surface of the substrate layer, adsorbing, diffusing, and the like of hydrocarbon radicals, Growing graphene on the substrate layer,
(1) to (3) to (4), each of which is constituted of a non-catalyst-substrate-grown graphene and a non-catalyst-substrate-grown graphene.
1,
(One). A substrate having a substrate layer formed thereon,
(2). Supplying a carbon-containing gas and performing plasma-enhanced chemical vapor deposition (PECVD)
(3-4). In the growth type of van der Waals type which is generated nuclei on the surface of the substrate layer by adsorbing, diffusing and the hydrocarbon radicals, graphene is deposited on the substrate layer without the catalyst layer Growing step,
(1) to (3) to (4), each of which is constituted of a non-catalyst-substrate-grown graphene and a non-catalyst-substrate-grown graphene.
2A,
2A is a view schematically showing (1) or (2) described below.
(One). If the concentration distribution of the carbon-containing gas in the substrate layer is nonuniform, the growth of graphene starts from the point where the concentration of the carbon-containing gas is high and grows toward the point where the concentration of the carbon-containing gas is low.
Therefore, by appropriately setting the concentration distribution of the carbon-containing gas, it is possible to control the direction in which graphene crystals grow.
Of course, in one embodiment of the present invention, the starting point of graphene growth may be nucleation of graphene at undesired locations as well as at locations to be presented in the present invention, Can be understood as neglecting the nucleation of graphene generated in the graphene.
(2). The carbon-containing gas supply is performed by growing the graphene in a direction parallel to the surface of the substrate as the concentration distribution in the direction parallel to the surface of the substrate becomes uneven in the concentration distribution of the carbon-containing gas in the substrate layer ; ≪ / RTI > wherein the graphene graphene is grown on a substrate.
Of course, in one embodiment of the present invention, the starting point of graphene growth may be nucleation of graphene at undesired locations as well as at locations to be presented in the present invention, Can be understood as neglecting the nucleation of graphene generated in the graphene.
2B
2B is a view schematically showing (1) or (2) described below.
(One). If the concentration distribution of the carbon-containing gas in the substrate layer is nonuniform, the growth of graphene starts from the point where the concentration of the carbon-containing gas is high and grows toward the point where the concentration of the carbon-containing gas is low.
Therefore, by appropriately setting the concentration distribution of the carbon-containing gas, it is possible to control the direction in which graphene crystals grow.
Of course, in one embodiment of the present invention, the starting point of graphene growth may be nucleation of graphene at undesired locations as well as at locations to be presented in the present invention, Can be understood as neglecting the nucleation of graphene generated in the graphene.
(2). The carbon-containing gas supply is performed by growing the graphene in a direction parallel to the surface of the substrate as the concentration distribution in the direction parallel to the surface of the substrate becomes uneven in the concentration distribution of the carbon-containing gas in the substrate layer ; ≪ / RTI > wherein the graphene graphene is grown on a substrate.
Of course, in one embodiment of the present invention, the starting point of graphene growth may be nucleation of graphene at undesired locations as well as at locations to be presented in the present invention, Can be understood as neglecting the nucleation of graphene generated in the graphene.
3
In one embodiment of the present invention, it is a cross-sectional view schematically showing a first example of graphene provided in the present invention for producing a noncatalytic substrate growth graphene.
4
In one embodiment of the present invention, it is a cross-sectional view schematically showing a first example of a substrate provided with a substrate layer to be presented.
5
In one embodiment of the present invention, is a cross-sectional view schematically illustrating a second example of a substrate provided with a substrate layer to be presented.
6
Sectional view schematically illustrating a first example that may be included in the carbon-containing gas supply performed in the method of manufacturing the non-catalyst substrate growth graphene in one embodiment of the present invention.
7
Sectional view schematically illustrating a second example that may be included in the carbon-containing gas supply performed in the method of manufacturing the non-catalyst substrate growth graphene in one embodiment of the present invention.
In the following description of the present invention, detailed description of known functions and configurations incorporated herein will be omitted when it may make the subject matter of the present invention rather unclear.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory and are intended to be exemplary only, and are not intended to limit the scope of the invention.
Non-catalytic substrate growth method of graphene growth and non-catalytic substrate growth Graphene
Graphene produced by the conventional technique becomes a heterogeneous polycrystalline film randomly growing crystal grains since crystals randomly grow from the catalyst metal. Therefore, there is a demand for a technique of producing a single crystal graphene as large as possible by limiting the growth of grain boundaries to desired positions by controlling the growth of graphene.
Further, since the graphene growth method using the catalytic metal once forms graphene, the metal of the catalyst is sandwiched between the graphene and the substrate. Therefore, the metal removal requires a lot of effort and is easy to remove completely It is not.
In addition, a method of transferring graphene rather than a method of growing graphene is likely to cause defects when transferring graphene.
Therefore, there is a need for a technique for producing graphene directly on the surface of a substrate, without catalyst metal, on the substrate.
Thus, in one embodiment of the present invention, the proposed method of manufacturing the non-
(One). A substrate having a substrate layer formed thereon,
(2). Supplying a carbon-containing gas and performing plasma-enhanced chemical vapor deposition (PECVD)
(3). In the heteroepitaxial growth type of Van der Waals type which is generated nuclei on the surface of the substrate layer by adsorbing, diffusing and the hydrocarbon radicals, A method of manufacturing a non-catalyst substrate grown graphene by growing graphene on a substrate layer.
Described again include supplying a carbon-containing gas and performing plasma chemical vapor deposition (PECVD) to grow the graphene on the substrate layer in the absence of a catalyst layer; The method comprising the steps of:
In one embodiment of the present invention, the substrate layer may refer to a substrate on which a substrate layer is formed, although not specifically described.
"Plasma-Enhanced Chemical Vapor Deposition " (PECVD) proposed in the present invention can be expressed as" PECVD ". In one embodiment of the present invention, the PECVD process presented in the present invention involves adsorbing, diffusing hydrocarbon radicals, and forming heterojunctions of the van der Waals type hetero The term " heteroepitaxial growth " refers to a PECVD process as a method for producing graphene on a substrate layer without a catalyst layer.
Alternatively, in one embodiment of the present invention, the PECVD process presented in the present invention is characterized by adsorbing, diffusing hydrocarbon radicals and forming a van der Waals type that is nucleated on the surface of the substrate layer , Which may be a PECVD process as a method for producing graphene on a substrate layer without a catalyst layer.
In one embodiment of the present invention, the method of making the non-catalytic substrate growth graphene comprises adsorbing, diffusing, and nucleating hydrocarbon radicals on the surface of the substrate layer, while maintaining PECVD. Heteroepitaxial growth type van der Waals type graphene grown on a substrate layer in the absence of a catalyst layer.
In one embodiment of the present invention, the method of making the non-catalytic substrate growth graphene comprises adsorbing, diffusing, and nucleating hydrocarbon radicals on the surface of the substrate layer, while maintaining PECVD. A growth type of Van der Waals type in which graphenes are grown on a substrate layer without a catalyst layer.
In one embodiment of the present invention, the initial hydrocarbon molecules in the method for preparing the non-catalyst substrate grown graphene may have a low sticking coefficient condition at the surface of the substrate layer together with hydrogen molecules.
In one embodiment of the present invention, in the process for the preparation of the non-catalytic substrate growth graphene, C x H y , CH x and C 2 radicals and hydrogen are diffused on the surface following adsorption.
In one embodiment of the present invention, in the method of making the non-catalyst substrate grown graphene, the shape and surface roughness of the substrate layer surface and the temperature of the surface have an important role in nucleation.
In one embodiment of the present invention, the method of making the non-catalyst substrate grown graphene is also described below.
(One). A substrate having a substrate layer formed thereon,
(2). Plasma-enhanced chemical vapor deposition (PECVD) is performed while the concentration of carbon-containing gas is kept unbalanced.
Then, on the surface of the substrate layer, carbon grows into graphene. If the PECVD is continuously carried out while keeping the concentration of the carbon-containing gas unbalanced, the grown graphene grows further.
Carbon continues to undergo PECVD with the concentration of carbon-containing gas unbalanced, so that carbon grows to form a crystal structure with already-grown graphene. Thus, finally graphene is formed. Of course, in one embodiment of the present invention, the starting point of graphene growth may be nucleation of graphene at undesired locations as well as at locations to be presented in the present invention, Can be understood as neglecting the nucleation of graphene generated in the graphene.
Therefore, unlike the conventional method using the metal catalyst, the graphene can be directly grown on the substrate without the catalyst layer.
In one embodiment of the invention, a method of providing a substrate layer may comprise a method of selectively etching the substrate layer to provide a substrate layer having a desired shape. Here, the selective etching means performing the etching process to leave only a desired portion. The etch process is known to those skilled in the art and is therefore not described further herein.
In one embodiment of the present invention, a method of forming a substrate layer may include, in addition to the method of performing the guest etching, a method of forming a resist mask by dissolving a resist mask after formation of a substrate layer, And a method of removing the substrate layer formed on the surface thereof, and thus, a substrate layer having a desired shape.
In one embodiment of the present invention, the substrate layer may be deformed (wholly or partially) during the process of manufacturing the noncatalyst substrate growth graphene, but is not limited thereto.
In one embodiment of the present invention, the substrate layer may be morphologically deformed (wholly or partially) during the process of manufacturing the noncatalyst substrate growth graphene, but is not limited thereto.
In one embodiment of the present invention, in the method of making the non-catalyst substrate grown graphene, the substrate layer may refer to a substrate layer on which the deposition of the substrate layer and selective etching have been performed.
In one embodiment of the present invention, in the method of manufacturing the non-catalytic substrate growth graphene, the substrate is placed into the PECVD chamber with the substrate layer thereon to perform the method of manufacturing the non-catalytic substrate growth graphene.
In one embodiment of the present invention, the method of making the non-catalyst substrate growth graphene may use a load-locked chamber, but is not limited thereto.
In one embodiment of the invention, the method of manufacturing the non-catalytic substrate growth graphene may utilize a transport system selected from an atmospheric pressure wafer transfer system, a vacuum wafer transfer system.
In one embodiment of the present invention, the method of manufacturing the non-catalyst substrate growth graphene can appropriately adjust the environment of the substrate in the process before and after the graphene formation by using the load-lock chamber.
In one embodiment of the present invention, the method of making the non-catalyst substrate grown graphene can appropriately adjust the graphene forming environment by using a rod-lock chamber.
In one embodiment of the present invention, the method of manufacturing the non-catalyst substrate grown graphene can control the degree of graphene formation by appropriately controlling the graphene growth process. Therefore, in order to obtain the desired thickness of the graphene sheet, the temperature, the degree of vacuum, the plasma power, the PECVD process, the type of the carbon-containing gas, the supply pressure, the supply range, Temperature and holding time can act as important factors. Those skilled in the art will appreciate that these important elements can be selectively and appropriately adjusted by one skilled in the art in an embodiment of the present invention. It will be easy to understand.
In one embodiment of the present invention, in the method for producing a non-catalytic substrate-grown graphene, while inert gas is not specifically described, while the method for producing the non-catalyst substrate-grown graphene is carried out, This may mean that the growth is carried out as part of the manufacturing process of graphene.
In one embodiment of the present invention, in the method of manufacturing the non-catalyst substrate grown graphene, hydrogen is not added to the non-catalyst substrate growth It may mean that it is included in the manufacturing method of the pin.
In an embodiment of the present invention, in the method of manufacturing the non-catalyst substrate grown graphene, the step of providing the substrate layer provided on the substrate may include a method selected from vapor deposition, coating, Do not.
In one embodiment of the present invention, in the method for the production of the non-catalytic substrate growth graphene, the formation of graphene by PECVD is performed by maintaining the chamber of the PECVD apparatus at a low pressure, for example, a vacuum degree of several to several tens of mTorr (Or supplying) a carbon-containing gas while applying a plasma power of several tens W to several hundreds W to form a plasma in the chamber, thereby forming hydrocarbon radicals (Heteroepitaxial growth) type of van der Waals type which is nucleated on the surface of the substrate layer, in the absence of a catalyst layer. The pins are grown. In one embodiment of the present invention, the plasma power is not limited to several tens W to several hundreds W.
Thus, the process for preparing the non-catalytic substrate grown graphene involves the adsorbing, diffusing of hydrocarbon radicals and the heteroepitaxial growth of Van der Waals type nucleation on the surface of the substrate layer heteroepitaxial growth type graphene graphene grown on a substrate layer in the absence of a catalyst layer. It is important that the PECVD process uniformly injects the carbon-containing gas across the substrate layer region so that a uniform plasma is formed. When the above process is performed, a non-catalyst substrate growth graphene directly contacting graphene on the substrate layer can be formed.
However, if the concentration distribution of the carbon-containing gas is uneven, the growth of the graphene starts from the point where the concentration of the carbon-containing gas is high, and grows toward the point where the concentration of the carbon-containing gas is low.
Therefore, by appropriately setting the concentration distribution of the carbon-containing gas, it is possible to control the direction in which graphene crystals grow.
By controlling the direction of graphene growth in this manner, the grain boundary can be controlled at a predetermined position, since the graphene grain boundary is formed only at the growth start point and at the growth end point connected to the graphenes, It is possible to realize a large crystal grain size by reducing the growth starting point. Of course, in one embodiment of the present invention, graphene nucleation may occur not only at a position to be proposed in the present invention but also at an undesired position, It can be understood that the nucleation of the generated graphenes is properly ignored.
In one embodiment of the present invention, in the method for the production of the non-catalytic substrate growth graphene, the formation of graphene by PECVD is performed by maintaining the chamber of the PECVD apparatus at a low pressure, for example, a vacuum degree of several to several tens of mTorr (Or supplying) a carbon-containing gas while applying a plasma power of several tens W to several hundreds W to form a plasma in the chamber, thereby forming hydrocarbon radicals Graphene is grown on the substrate layer without a catalyst layer, with a growth type of van der Waals type nucleated on the surface of the substrate layer. In one embodiment of the present invention, the plasma power is not limited to several tens W to several hundreds W.
Thus, the method of producing the non-catalytic substrate growth graphene is a growth type of van der Waals type which is nucleated on the surface of the substrate layer and adsorbs and diffuses hydrocarbon radicals, Wherein the graphene grains are grown on the substrate layer in the absence of the catalyst layer. It is important that the PECVD process uniformly injects the carbon-containing gas across the substrate layer region so that a uniform plasma is formed. When the above process is performed, a non-catalyst substrate growth graphene directly contacting graphene on the substrate layer can be formed.
However, if the concentration distribution of the carbon-containing gas is uneven, the growth of the graphene starts from the point where the concentration of the carbon-containing gas is high, and grows toward the point where the concentration of the carbon-containing gas is low.
Therefore, by appropriately setting the concentration distribution of the carbon-containing gas, it is possible to control the direction in which graphene crystals grow.
By controlling the direction of graphene growth in this manner, the grain boundary can be controlled at a predetermined position, since the graphene grain boundary is formed only at the growth start point and at the growth end point connected to the graphenes, It is possible to realize a large crystal grain size by reducing the growth starting point. Of course, in one embodiment of the present invention, graphene nucleation may occur not only at a position to be proposed in the present invention but also at an undesired position, It can be understood that the nucleation of the generated graphenes is properly ignored.
In one embodiment of the present invention, a method for producing an uncatalyzed substrate growth graphene can be described as follows.
(One). Thereby increasing the concentration of the carbon-containing gas in a specific region of the substrate layer in the substrate layer.
(2). PECVD is performed.
(3). Then, in the heteroepitaxial growth type of van der Waals type which is generated nuclei on the surface of the substrate layer, adsorbing, diffusing and the like of the hydrocarbon radicals, And grow to graphene in a specific region. Of course, in one embodiment of the present invention, graphene nucleation may occur not only at a position to be proposed in the present invention but also at an undesired position, It can be understood that the nucleation of the generated graphenes is properly ignored.
(4). If the PECVD is continuously performed in this way, the grown graphene grows further. Since the concentration of the carbon-containing gas is increased in a specific region of the substrate layer while maintaining the PECVD, the carbon grows to have a crystal structure with already grown graphene. At this time, graphenes grow in a direction parallel to the specific region of the substrate layer.
(5). And finally, graphene is formed on the surface of the substrate.
In one embodiment of the present invention, this embodiment is a method of manufacturing an uncatalyzed substrate growth graphene. The method for producing the non-catalyst substrate grown graphene is described as <A> or <B> below.
<A>
(One). Thereby increasing the concentration of the carbon-containing gas in a specific region of the substrate layer in the substrate layer.
(2). PECVD is performed.
(3). Then, in the heteroepitaxial growth type of van der Waals type which is generated nuclei on the surface of the substrate layer, adsorbing, diffusing and the like of the hydrocarbon radicals, And grow to graphene in a specific region. Of course, in one embodiment of the present invention, graphene nucleation may occur not only at a position to be proposed in the present invention but also at an undesired position, It can be understood that the nucleation of the generated graphenes is properly ignored.
(4). If the PECVD is continuously performed in this way, the grown graphene grows further. Since the concentration of the carbon-containing gas is increased in a specific region of the substrate layer while maintaining the PECVD, the carbon grows to have a crystal structure with already grown graphene. At this time, graphenes grow in a direction parallel to the specific region of the substrate layer.
(5). And finally, graphene is formed on the surface of the substrate.
<B>
This embodiment is a method for producing graphene without catalyst for growing graphene when carrying out the above embodiment <A> .
(One). Based on the techniques described in Example <A>, carbon in a specific area of the alignment layer of the substrate in the substrate layer, it increases the density of the contained gas.
(2). Based on the techniques described in Example <A>, non-catalytic substrate growth yes performs the manufacturing method of the pin. Then graphene grows in a certain region of the substrate layer. Of course, in one embodiment of the present invention, graphene nucleation may occur not only at a position to be proposed in the present invention but also at an undesired position, It can be understood that the nucleation of the generated graphenes is properly ignored.
(3). (1) to (3), in which graphene is formed when the production method of the non-catalyst substrate grown graphene is completed.
In one embodiment of the present invention, this embodiment is a method of manufacturing an uncatalyzed substrate growth graphene. The method for producing the non-catalyst substrate grown graphene is described as <A> or <B> below.
<A>
(One). Thereby increasing the concentration of the carbon-containing gas in a specific region of the substrate layer in the substrate layer.
(2). PECVD is performed.
(3). Then, in the heteroepitaxial growth type of van der Waals type which is generated nuclei on the surface of the substrate layer, adsorbing, diffusing and the like of the hydrocarbon radicals, And grow to graphene in a specific region. Of course, in one embodiment of the present invention, graphene nucleation may occur not only at a position to be proposed in the present invention but also at an undesired position, It can be understood that the nucleation of the generated graphenes is properly ignored.
(4). If the PECVD is continuously performed in this way, the grown graphene grows further. Since the concentration of the carbon-containing gas is increased in a specific region of the substrate layer while maintaining the PECVD, the carbon grows to have a crystal structure with already grown graphene. At this time, graphenes grow in a direction parallel to the specific region of the substrate layer.
(5). And finally, graphene is formed on the surface of the substrate.
<B>
This embodiment is a method for producing graphene on a non-catalyst substrate in which plane graphenes are produced when the above embodiment <A> is repeated twice.
(One). Based on the techniques described in Example <A>, carbon in a specific area of the alignment layer of the substrate in the substrate layer, it increases the density of the contained gas.
(2). Based on the techniques described in Example <A>, non-catalytic substrate growth yes performs the manufacturing method of the pin. Then graphene grows in a certain region of the substrate layer. Of course, in one embodiment of the present invention, graphene nucleation may occur not only at a position to be proposed in the present invention but also at an undesired position, It can be understood that the nucleation of the generated graphenes is properly ignored.
(3). Non-catalytic substrate growth When graphene production is completed, graphene is formed.
(4). Thereafter, the graphene on top of the substrate layer, based on the techniques described in Example <A>, well being parallel to the longitudinal direction of the pin, yes and the longitudinal direction of the fin is in a specific area of the side of the vertical direction Increases the concentration of carbon-containing gas.
(5). Then, on the basis of the techniques described in Example <A>, non-catalytic substrate growth yes performs the manufacturing method of the pin. Then, the remaining graphen is set as the starting position, and the plane graphen grows in the direction perpendicular to the long direction of graphene.
(6). (1) to (6), wherein the surface graphene is formed when the production method of the non-catalyst substrate-grown graphene is completed.
In one embodiment of the present invention, the method of manufacturing the non-catalyst substrate growth graphene can control the start point and direction of growth on the substrate layer of the graphene. Furthermore, the area of the graphene of the single crystal can be made larger than the conventional one. Of course, in one embodiment of the present invention, a small amount of polycrystals may remain with a small number of single crystals.
In one embodiment of the present invention, the beginning of the growth of graphene may occur not only at the position to be proposed in the present invention but also at an undesired position, It can be understood that the nucleation of graphene is neglected properly.
In one embodiment of the present invention, the method of manufacturing the non-catalytic substrate growth graphene can be carried out by appropriately setting the supply environment of the carbon-containing gas and the growth environment of the graphene, A small number of single crystal graphenes may be provided. Of course, in one embodiment of the present invention, a small amount of polycrystals may remain with a small number of single crystals.
In one embodiment of the present invention, this embodiment is a method of manufacturing an uncatalyzed substrate growth graphene. The method for producing the non-catalyst substrate grown graphene is described as <A> or <B> below.
<A>
(One). Thereby increasing the concentration of the carbon-containing gas in a specific region of the substrate layer in the substrate layer.
(2). PECVD is performed.
(3). Then, as a growth type of Van der Waals type that is nucleated on the surface of the substrate layer, adsorbing, diffusing of hydrocarbon radicals and growth of graphene in a specific region of the substrate layer . Of course, in one embodiment of the present invention, graphene nucleation may occur not only at a position to be proposed in the present invention but also at an undesired position, It can be understood that the nucleation of the generated graphenes is properly ignored.
(4). If the PECVD is continuously performed in this way, the grown graphene grows further. Since the concentration of the carbon-containing gas is increased in a specific region of the substrate layer while maintaining the PECVD, the carbon grows to have a crystal structure with already grown graphene. At this time, graphenes grow in a direction parallel to the specific region of the substrate layer.
(5). And finally, graphene is formed on the surface of the substrate.
<B>
This embodiment is a method for producing graphene without catalyst for growing graphene when carrying out the above embodiment <A> .
(One). Based on the techniques described in Example <A>, carbon in a specific area of the alignment layer of the substrate in the substrate layer, it increases the density of the contained gas.
(2). Based on the techniques described in Example <A>, non-catalytic substrate growth yes performs the manufacturing method of the pin. Then graphene grows in a certain region of the substrate layer. Of course, in one embodiment of the present invention, graphene nucleation may occur not only at a position to be proposed in the present invention but also at an undesired position, It can be understood that the nucleation of the generated graphenes is properly ignored.
(3). (1) to (3), in which graphene is formed when the production method of the non-catalyst substrate grown graphene is completed.
In one embodiment of the present invention, this embodiment is a method of manufacturing an uncatalyzed substrate growth graphene. The method for producing the non-catalyst substrate grown graphene is described as <A> or <B> below.
<A>
(One). Thereby increasing the concentration of the carbon-containing gas in a specific region of the substrate layer in the substrate layer.
(2). PECVD is performed.
(3). Then, as a growth type of Van der Waals type that is nucleated on the surface of the substrate layer, adsorbing, diffusing of hydrocarbon radicals and growth of graphene in a specific region of the substrate layer . Of course, in one embodiment of the present invention, graphene nucleation may occur not only at a position to be proposed in the present invention but also at an undesired position, It can be understood that the nucleation of the generated graphenes is properly ignored.
(4). If the PECVD is continuously performed in this way, the grown graphene grows further. Since the concentration of the carbon-containing gas is increased in a specific region of the substrate layer while maintaining the PECVD, the carbon grows to have a crystal structure with already grown graphene. At this time, graphenes grow in a direction parallel to the specific region of the substrate layer.
(5). And finally, graphene is formed on the surface of the substrate.
<B>
This embodiment is a method for producing graphene on a non-catalyst substrate in which plane graphenes are produced when the above embodiment <A> is repeated twice.
(One). Based on the techniques described in Example <A>, carbon in a specific area of the alignment layer of the substrate in the substrate layer, it increases the density of the contained gas.
(2). Based on the techniques described in Example <A>, non-catalytic substrate growth yes performs the manufacturing method of the pin. Then graphene grows in a certain region of the substrate layer. Of course, in one embodiment of the present invention, graphene nucleation may occur not only at a position to be proposed in the present invention but also at an undesired position, It can be understood that the nucleation of the generated graphenes is properly ignored.
(3). Non-catalytic substrate growth When graphene production is completed, graphene is formed.
(4). Thereafter, the graphene on top of the substrate layer, based on the techniques described in Example <A>, well being parallel to the longitudinal direction of the pin, yes and the longitudinal direction of the fin is in a specific area of the side of the vertical direction Increases the concentration of carbon-containing gas.
(5). Then, on the basis of the techniques described in Example <A>, non-catalytic substrate growth yes performs the manufacturing method of the pin. Then, the remaining graphen is set as the starting position, and the plane graphen grows in the direction perpendicular to the long direction of graphene.
(6). (1) to (6), wherein the surface graphene is formed when the production method of the non-catalyst substrate-grown graphene is completed.
In one embodiment of the present invention, this embodiment is a method of manufacturing an uncatalyzed substrate growth graphene. The method for producing the non-catalyst substrate grown graphene is described as <A> or <B> below.
<A>
(One). The concentration of the carbon-containing gas is increased in a certain region on the substrate layer in the substrate layer.
(2). PECVD is performed.
(3). Then, in the heteroepitaxial growth type of van der Waals type which is generated nuclei on the surface of the substrate layer, adsorbing, diffusing and the like of the hydrocarbon radicals, And grow to graphene in a specific region. Of course, in one embodiment of the present invention, graphene nucleation may occur not only at a position to be proposed in the present invention but also at an undesired position, It can be understood that the nucleation of the generated graphenes is properly ignored.
(4). If the PECVD is continuously performed in this way, the grown graphene grows further. The concentration of the carbon-containing gas is increased in a specific region on the substrate layer while maintaining the PECVD. Therefore, the carbon grows to have a crystal structure with the already-grown graphene. At this time, graphenes grow in a direction parallel to the line in a specific region of the substrate layer.
(5). And finally, graphene is formed on the surface of the substrate.
<B>
(One). After the description of the embodiment A , the concentration of the carbon-containing gas is increased in a specific region on the left side of the substrate layer which is perpendicular to the longitudinal direction of graphene.
(2). Then, on the basis of the description of the embodiment A , a method for manufacturing the non-catalyst substrate growth graphene is carried out. Then, with the graphene remaining as the starting position, the plane graphen grows from right to left, which is perpendicular to the long direction of graphene.
(3). And finally the surface graphenes are brought into direct contact with the surface of the substrate.
In one embodiment of the present invention, this embodiment is a method of manufacturing an uncatalyzed substrate growth graphene. The method for producing the non-catalyst substrate grown graphene is described as <A> or <B> below.
<A>
(One). The concentration of the carbon-containing gas is increased in a certain region on the substrate layer in the substrate layer.
(2). PECVD is performed.
(3). Then, as a growth type of Van der Waals type that is nucleated on the surface of the substrate layer, adsorbing, diffusing of hydrocarbon radicals and growth of graphene in a specific region of the substrate layer . Of course, in one embodiment of the present invention, graphene nucleation may occur not only at a position to be proposed in the present invention but also at an undesired position, It can be understood that the nucleation of the generated graphenes is properly ignored.
(4). If the PECVD is continuously performed in this way, the grown graphene grows further. The concentration of the carbon-containing gas is increased in a specific region on the substrate layer while maintaining the PECVD. Therefore, the carbon grows to have a crystal structure with the already-grown graphene. At this time, graphenes grow in a direction parallel to the line in a specific region of the substrate layer.
(5). And finally, graphene is formed on the surface of the substrate.
<B>
(One). After the description of the embodiment A , the concentration of the carbon-containing gas is increased in a specific region on the left side of the substrate layer which is perpendicular to the longitudinal direction of graphene.
(2). Then, on the basis of the description of the embodiment A , a method for manufacturing the non-catalyst substrate growth graphene is carried out. Then, with the graphene remaining as the starting position, the plane graphen grows from right to left, which is perpendicular to the long direction of graphene.
(3). And finally the surface graphenes are brought into direct contact with the surface of the substrate.
In one embodiment of the present invention, a method for producing an uncatalyzed substrate growth graphene can be described as follows.
(One). The shape of the substrate layer is formed to have a three-dimensional height. In one embodiment of the present invention, a resist mask or the like may be used to remove the substrate layer from being formed at a portion other than the necessary portion.
(2). Thereby increasing the concentration of the carbon-containing gas in a specific region of the substrate layer in the substrate layer.
(3). PECVD is performed.
(4). Then, in the heteroepitaxial growth type of van der Waals type which is generated nuclei on the surface of the substrate layer, adsorbing, diffusing and the like of the hydrocarbon radicals, And grow to graphene in a specific region. Of course, in one embodiment of the present invention, graphene nucleation may occur not only at a position to be proposed in the present invention but also at an undesired position, It can be understood that the nucleation of the generated graphenes is properly ignored.
(5). If the PECVD is continuously performed in this way, the grown graphene grows further. Since the concentration of the carbon-containing gas is increased in a specific region of the substrate layer while maintaining the PECVD, the carbon grows to have a crystal structure with already grown graphene. At this time, graphenes grow in a direction parallel to the specific region of the substrate layer.
(6). (1) to (6), wherein the graphene is finally provided with a three-dimensional height.
In one embodiment of the present invention, a method for producing an uncatalyzed substrate growth graphene can be described as follows.
(One). The shape of the substrate layer is formed to have a three-dimensional height. In one embodiment of the present invention, a resist mask or the like may be used to remove the substrate layer from being formed at a portion other than the necessary portion.
(2). Thereby increasing the concentration of the carbon-containing gas in a specific region of the substrate layer in the substrate layer.
(3). PECVD is performed.
(4). Then, as a growth type of Van der Waals type that is nucleated on the surface of the substrate layer, adsorbing, diffusing of hydrocarbon radicals and growth of graphene in a specific region of the substrate layer . Of course, in one embodiment of the present invention, graphene nucleation may occur not only at a position to be proposed in the present invention but also at an undesired position, It can be understood that the nucleation of the generated graphenes is properly ignored.
(5). If the PECVD is continuously performed in this way, the grown graphene grows further. Since the concentration of the carbon-containing gas is increased in a specific region of the substrate layer while maintaining the PECVD, the carbon grows to have a crystal structure with already grown graphene. At this time, graphenes grow in a direction parallel to the specific region of the substrate layer.
(6). (1) to (6), wherein the graphene is finally provided with a three-dimensional height.
In one embodiment of the present invention, setting the concentration distribution of the carbon-containing gas can be set to adjust the injection position of the carbon-containing gas.
In one embodiment of the present invention, setting the concentration distribution of the carbon-containing gas can be set to regulate the supply range of the carbon-containing gas.
In one embodiment of the present invention, the concentration distribution of the carbon-containing gas may be suitably varied (or adjusted) during the course of performing the method of manufacturing the non-catalyst substrate growth graphene.
In one embodiment of the present invention, the setting of the concentration distribution of the carbon-containing gas can be set by adjusting the partial pressure of the carbon-containing gas. In one embodiment of the invention, the partial pressure of the carbon-containing gas can be adjusted by diluting the carbon-containing gas to the desired concentration in the argon gas. Alternatively, in one embodiment of the present invention, the partial pressure of the carbon-containing gas can be adjusted by diluting the carbon-containing gas to the desired concentration in the inert gas.
In one embodiment of the present invention, the carbon-containing gas may be supplied, such as hydrogen and argon.
In one embodiment of the present invention, the method of manufacturing the non-catalytic substrate growth graphene can perform a cooling process on the formed graphene after the PECVD process. The cooling step is a method for uniformly growing the formed graphenes so that the graphenes can be uniformly arranged. Since rapid cooling may cause cracking of the graphene, it is preferable that the cooling step is gradually cooled at a constant speed. For example, it is possible to use a method such as natural cooling. The natural cooling is obtained by simply removing the heat source used for the heat treatment. Thus, it is possible to obtain a sufficient cooling rate even by removing the heat source.
In one embodiment of the present invention, the method of manufacturing the non-catalyst substrate grown graphene may comprise further supplying a reducing gas with the carbon-containing gas. For example, the reducing gas may comprise hydrogen, helium, argon, or nitrogen.
In one embodiment of the present invention, in the method of manufacturing the non-catalyst substrate grown graphene, the PECVD process for providing graphene may be performed more than once.
In one embodiment of the present invention, in the method of manufacturing the non-catalyst substrate grown graphene, the PECVD process and the cooling process for graphene may be performed more than once.
In one embodiment of the present invention, in the method of making the non-catalytic substrate grown graphene, the carbon-containing gas may be meant to include hydrocarbons.
In an embodiment of the present invention, non-catalytic substrate growth So, in the manufacturing method, the carbon of the pin-containing gas may be meant to include the CH 4 gas.
In one embodiment of the present invention, in the method of making the non-catalyst substrate grown graphene, the carbon-containing gas may mean a mixture of CH 4 and Ar gas.
In one embodiment of the present invention, the carbon-containing gas may be meant to include an inert gas, such as argon, in addition to the compound comprising carbon. In addition, in one embodiment of the present invention, the carbon-containing gas may be present with the hydrogen in the chamber of the PECVD apparatus.
In one embodiment of the present invention, the carbon-containing gas may be meant to include an inert gas, such as argon, in addition to the gas capable of forming activated carbon. In addition, in one embodiment of the present invention, the carbon-containing gas may be present with the hydrogen in the chamber of the PECVD apparatus.
In one embodiment of the invention, the carbon-containing gas may be meant to include an inert gas, such as argon, in addition to the hydrocarbon gas.
In one embodiment of the present invention, the method for producing the non-catalyst substrate growth graphene is such that, when the supply environment of the carbon-containing gas and the growth environment of the graphene are set appropriately and the growth of the graphene is performed, .
In one embodiment of the present invention, the method of manufacturing the non-catalyst substrate grown graphene can control the thickness of the graphene by appropriately adjusting the PECVD execution time and the graphen forming environment.
In one embodiment of the present invention, a method of manufacturing an uncatalyzed substrate growth graphene comprises: providing a substrate layer on a substrate; thereafter providing a carbon-containing gas and performing a plasma enhanced chemical vapor deposition (PECVD) ) Is carried out to form a heteroepitaxial growth type of Van der Waals type nucleated on the surface of the substrate layer by adsorbing and diffusing hydrocarbon radicals, The method comprising: growing graphene on a substrate layer without providing the substrate; The method comprising the steps of:
In one embodiment of the present invention, a method of manufacturing an uncatalyzed substrate growth graphene comprises: providing a substrate layer on a substrate; thereafter providing a carbon-containing gas and performing a plasma enhanced chemical vapor deposition (PECVD) ) Is carried out to form a van der Waals type growth type which is generated nuclei on the surface of the substrate layer by adsorbing and diffusing hydrocarbon radicals, Including growing graphene on a layer; The method comprising the steps of:
In one embodiment of the present invention, in the method of manufacturing the non-catalytic substrate growth graphene, the substrate layer is provided with one or more Piezo material, magnetic particles, particles having charge, May refer to a substrate layer. In one embodiment of the present invention, the thin film may mean, but is not limited to, a thin film having a thickness of several thousand micrometers or less.
In one embodiment of the invention, Piezo refers to the converse piezoelectric effect. That is, mechanical deformation occurs when an electric field is applied.
In one embodiment of the present invention, the method of making the non-catalyst substrate grown graphene comprises
a. Loading a substrate into a deposition chamber to form a substrate layer on the substrate; And
b. Loading the substrate into a PECVD chamber and supplying a carbon-containing gas to form an uncatalyzed substrate growth graphene by PECVD; , ≪ / RTI &
c. The substrate being sequentially loaded into the deposition chamber and the PECVD chamber using a load-locked chamber; The method comprising the steps of: In addition, in one embodiment of the present invention, the method for manufacturing the non-catalyst substrate growth graphene may further include cooling the non-catalyst substrate growth graphene.
In one embodiment of the present invention, the method of making the non-catalyst substrate grown graphene comprises
a. Loading a substrate into a deposition chamber to form a substrate layer on the substrate; And
b. Selectively etching the substrate layer formed on the substrate by sequentially loading the substrate into chambers for performing selective etching; And
c. Loading the substrate into a PECVD chamber and supplying a carbon-containing gas to form an uncatalyzed substrate growth graphene by PECVD; , ≪ / RTI &
d. The substrate being sequentially loaded using a load-locked chamber; The method comprising the steps of: In addition, in one embodiment of the present invention, the method for manufacturing the non-catalyst substrate growth graphene may further include cooling the non-catalyst substrate growth graphene.
In one embodiment of the present invention, the method of making the non-catalyst substrate grown graphene comprises
a. Loading a substrate into a deposition chamber to form a substrate layer on the substrate; And
b. Loading the substrate into a CMP chamber and performing a CMP process on the substrate layer formed on the substrate; And
c. Loading the substrate into a PECVD chamber and supplying a carbon-containing gas to form an uncatalyzed substrate growth graphene by PECVD; , ≪ / RTI &
d. The substrate being sequentially loaded using a load-locked chamber; The method comprising the steps of: In addition, in one embodiment of the present invention, the method for manufacturing the non-catalyst substrate growth graphene may further include cooling the non-catalyst substrate growth graphene.
In one embodiment of the present invention, the method of making the non-catalyst substrate grown graphene comprises
a. Loading a substrate into a deposition chamber to form a substrate layer on the substrate; And
b. Loading the substrate into a CMP chamber and performing a CMP process on the substrate layer formed on the substrate; And
c. Selectively etching the substrate layer formed on the substrate by sequentially loading the substrate into chambers for performing selective etching; And
d. Loading the substrate into a PECVD chamber and supplying a carbon-containing gas to form an uncatalyzed substrate growth graphene by PECVD; , ≪ / RTI &
e. The substrate being sequentially loaded using a load-locked chamber; The method comprising the steps of: In addition, in one embodiment of the present invention, the method for manufacturing the non-catalyst substrate growth graphene may further include cooling the non-catalyst substrate growth graphene.
In one embodiment of the present invention, the method of manufacturing the non-catalytic substrate growth graphene may additionally comprise several steps, but it may be carried out by supplying a carbon-containing gas and basically performing a plasma chemical vapor deposition (PECVD) A heteroepitaxial growth type of van der Waals type nucleated on the surface of a substrate layer and adsorbing and diffusing hydrocarbon radicals on the surface of the substrate layer, To grow the graphene on the substrate layer.
In one embodiment of the present invention, the method of manufacturing the non-catalytic substrate growth graphene may additionally comprise several steps, but it may be carried out by supplying a carbon-containing gas and basically performing a plasma chemical vapor deposition (PECVD) In a growing type of van der Waals type which is generated nuclei on the surface of the substrate layer by adsorbing and diffusing hydrocarbon radicals on the surface of the substrate layer, The step of growing the fin is performed.
'' -
In one embodiment of the present invention,
a. A substrate having a substrate layer formed thereon,
b. Supplying a carbon-containing gas and performing plasma-enhanced chemical vapor deposition (PECVD)
c. In a heteroepitaxial growth type of van der Waals type nucleated on the surface of the substrate layer, adsorbing, diffusing, and the like of hydrocarbon radicals, Including growing graphene on a substrate layer; of
The present invention also provides a manufacturing method of a non-catalyst substrate grown graphene.
In one embodiment of the present invention,
a. A substrate having a substrate layer formed thereon,
b. Supplying a carbon-containing gas and performing plasma-enhanced chemical vapor deposition (PECVD)
c. In a heteroepitaxial growth type of van der Waals type nucleated on the surface of the substrate layer, adsorbing, diffusing, and the like of hydrocarbon radicals, Including growing graphene on a substrate layer; The method comprising the steps of:
In one embodiment of the present invention, in the method for producing the non-catalytic substrate growth graphene, the carbon-containing gas supply is performed such that the concentration distribution of the carbon-containing gas in the substrate layer is unevenly distributed, Controlling; . Of course, in one embodiment of the present invention, the starting point of graphene growth may be nucleation of graphene at undesired locations as well as at locations to be presented in the present invention, Can be understood as neglecting the nucleation of graphene generated in the graphene.
In one embodiment of the present invention, in the method of manufacturing the non-catalytic substrate grown graphene, the carbon-containing gas supply is configured such that the specific area of the substrate layer is low in the concentration of the carbon-containing gas, The concentration of the carbon-containing gas is set to be high, thereby controlling the direction of growth of the graphene; . Of course, in one embodiment of the present invention, the starting point of graphene growth may be nucleation of graphene at undesired locations as well as at locations to be presented in the present invention, Can be understood as neglecting the nucleation of graphene generated in the graphene.
In one embodiment of the present invention, in the method of producing the non-catalyst substrate grown graphene, the carbon-containing gas supply is performed such that the concentration distribution in the direction parallel to the surface of the substrate, among the concentration distribution of the carbon- Growing the graphene in a direction parallel to the surface of the substrate; . Of course, in one embodiment of the present invention, the starting point of graphene growth may be nucleation of graphene at undesired locations as well as at locations to be presented in the present invention, Can be understood as neglecting the nucleation of graphene generated in the graphene.
In one embodiment of the present invention, a method of manufacturing an uncatalyzed substrate growth graphene comprises:
a. Loading a substrate into a deposition chamber to form a substrate layer on the substrate; And
b. Loading the substrate into a PECVD chamber and supplying a carbon-containing gas to form an uncatalyzed substrate growth graphene by PECVD; , ≪ / RTI &
c. The substrate being sequentially loaded into the deposition chamber and the PECVD chamber using a load-locked chamber; The method comprising the steps of: In one embodiment of the present invention, the method further comprises cooling the graphene grown on the substrate layer after performing the method of manufacturing the non-catalyst substrate growth graphene; The method comprising the steps of:
In one embodiment of the present invention, a method of manufacturing an uncatalyzed substrate growth graphene comprises:
a. Loading a substrate into a deposition chamber to form a substrate layer on the substrate; And
b. Selectively etching the substrate layer formed on the substrate by sequentially loading the substrate into chambers for performing selective etching; And
c. Loading the substrate into a PECVD chamber and supplying a carbon-containing gas to form an uncatalyzed substrate growth graphene by PECVD; , ≪ / RTI &
d. The substrate being sequentially loaded using a load-locked chamber; The method comprising the steps of: In one embodiment of the present invention, the method further comprises cooling the graphene grown on the substrate layer after performing the method of manufacturing the non-catalyst substrate growth graphene; The method comprising the steps of:
In one embodiment of the present invention, a method of manufacturing an uncatalyzed substrate growth graphene comprises:
a. Loading a substrate into a deposition chamber to form a substrate layer on the substrate; And
b. Loading the substrate into a CMP chamber and performing a CMP process on the substrate layer formed on the substrate; And
c. Loading the substrate into a PECVD chamber and supplying a carbon-containing gas to form an uncatalyzed substrate growth graphene by PECVD; , ≪ / RTI &
d. The substrate being sequentially loaded using a load-locked chamber; The method comprising the steps of: In one embodiment of the present invention, the method further comprises cooling the graphene grown on the substrate layer after performing the method of manufacturing the non-catalyst substrate growth graphene; The method comprising the steps of:
In one embodiment of the present invention, a method of manufacturing an uncatalyzed substrate growth graphene comprises:
a. Loading a substrate into a deposition chamber to form a substrate layer on the substrate; And
b. Loading the substrate into a CMP chamber and performing a CMP process on the substrate layer formed on the substrate; And
c. Selectively etching the substrate layer formed on the substrate by sequentially loading the substrate into chambers for performing selective etching; And
d. Loading the substrate into a PECVD chamber and supplying a carbon-containing gas to form an uncatalyzed substrate growth graphene by PECVD; , ≪ / RTI &
e. The substrate being sequentially loaded using a load-locked chamber; The method comprising the steps of: In one embodiment of the present invention, the method further comprises cooling the graphene grown on the substrate layer after performing the method of manufacturing the non-catalyst substrate growth graphene; The method comprising the steps of:
In one embodiment of the present invention, the method of manufacturing the non-catalytic substrate growth graphene further comprises cooling the graphenes grown on the substrate layer; The method comprising the steps of:
In one embodiment of the present invention, a method of manufacturing an uncatalyzed substrate growth graphene comprises:
a. Forming a substrate layer on the substrate, and
b. Uniformly configuring the concentration distribution of the carbon-containing gas in the substrate layer, and
c. Performing PECVD, and
d. In the heteroepitaxial growth type of Van der Waals type which is generated nuclei on the surface of the substrate layer by adsorbing, diffusing and the hydrocarbon radicals, And growing graphene on the substrate layer; The method comprising the steps of:
In one embodiment of the present invention, a method of manufacturing an uncatalyzed substrate growth graphene comprises:
a. Forming a substrate layer on the substrate, and
b. Increasing the concentration of the carbon-containing gas in a specific region of the substrate layer in the substrate layer, and
c. Performing PECVD, and
d. A heteroepitaxial growth type of Van der Waals type nucleated on the surface of a substrate layer and adsorbing and diffusing hydrocarbon radicals on the surface of the substrate layer, (Of course, in one embodiment of the present invention, the starting point of graphene growth is not only the position to be proposed in the present invention but also the nucleation of graphene occurs at an undesired position , But it can be understood that the nucleation of graphene occurring at such an unwanted position is properly ignored), and
e. The growth direction of graphene is such that graphene grows in a parallel direction in a specific region of the substrate layer, and
f. Finally including the step of forming graphene; of
The present invention also provides a manufacturing method of a non-catalyst substrate grown graphene.
In one embodiment of the present invention, a method of manufacturing an uncatalyzed substrate growth graphene comprises:
a. Forming a substrate layer on the substrate, and
b. Uniformly configuring the concentration distribution of the carbon-containing gas in the substrate layer, and
c. Performing PECVD, and
d. In the growth type of van der Waals type which is generated nuclei on the surface of the substrate layer by adsorbing, diffusing and the hydrocarbon radicals, graphene is deposited on the substrate layer without the catalyst layer Including the step of growing; The method comprising the steps of:
In one embodiment of the present invention, a method of manufacturing an uncatalyzed substrate growth graphene comprises:
a. Forming a substrate layer on the substrate, and
b. Increasing the concentration of the carbon-containing gas in a specific region of the substrate layer in the substrate layer, and
c. Performing PECVD, and
d. Growing into a graphene in a specific region of the substrate layer with a growth type of Van der Waals type nucleated on the surface of the substrate layer, adsorbing, diffusing and hydrocarbyl radicals (Of course, in one embodiment of the present invention, graphene nucleation may occur at undesired locations as well as at locations to be presented in the present invention at the beginning of graphene growth, Can be understood as neglecting the nucleation of graphene occurring in the substrate, and
e. The growth direction of graphene is such that graphene grows in a parallel direction in a specific region of the substrate layer, and
f. Finally including the step of forming graphene; of
The present invention also provides a manufacturing method of a non-catalyst substrate grown graphene.
In one embodiment of the present invention, in the method of manufacturing the non-catalytic substrate growth graphene, the supply of the carbon-containing gas may be performed prior to performing the PECVD, And a method of manufacturing the non-catalyst substrate growth graphene performing the PECVD during the operation.
In one embodiment of the present invention, in the method of manufacturing the non-catalytic substrate growth graphene, the supply of the carbon-containing gas may be performed after the operation of the PECVD apparatus and, therefore, And a method of manufacturing an uncatalysed substrate growth graphene for performing a supply of a carbon-containing gas.
In one embodiment of the present invention, the method of manufacturing the non-catalytic substrate growth graphene further comprises cooling the formed graphene; The method comprising the steps of:
In one embodiment of the present invention, a method of manufacturing an uncatalyzed substrate growth graphene comprises:
Graphene which grows in a first direction parallel to the surface of the substrate and which is in direct contact with the substrate layer is produced by a process for producing a noncatalyst substrate growth graphene,
Preparing surface graphenes growing in a second direction parallel to the surface from the graphenes and in direct contact with the substrate layer by a method of manufacturing a non-catalyst substrate growth graphene; The method comprising the steps of:
In one embodiment of the present invention, the method of manufacturing the non-catalytic substrate growth graphene further comprises the step of cooling the graphene, further comprising cooling the plane graphene; The method comprising the steps of:
In one embodiment of the present invention, the present invention provides a non-catalytic substrate growth graphene,
The non-catalyst substrate growth graphene directly contacts the surface of the substrate layer,
The crystal grain size in the first direction parallel to the surface of the non-catalyst substrate growth graphene is larger than the crystal grain size in any other direction parallel to the surface of the non-catalyst substrate growth graphene,
The grains in the first direction of the non-catalyst substrate growth grains are larger than the grains in the direction perpendicular to the surface of the grains; Free substrate growth graphene.
In one embodiment of the present invention, the present invention provides a non-catalytic substrate growth graphene,
The noncatalytic substrate growth graphene directly contacts the surface of the substrate layer,
Wherein said non-catalytic substrate growth graphene has a grain boundary along a first direction parallel to said surface,
The corresponding noncatalytic substrate growth graphene having a grain boundary along a second direction parallel to the surface; Free substrate growth graphene. In one embodiment of the present invention, the present invention is characterized in that the first direction and the second direction are orthogonal; Free substrate growth graphene.
In one embodiment of the present invention, the present invention provides a non-catalytic substrate growth graphene,
The noncatalytic substrate growth graphene directly contacts the surface of the substrate layer,
The non-catalytic substrate-grown graphene has a plurality of grain boundaries along a first direction parallel to the surface,
The corresponding noncatalytic substrate growth graphene having a plurality of crystal grain boundaries along a second direction parallel to the surface; Free substrate growth graphene. In one embodiment of the present invention, the present invention is characterized in that the first direction and the second direction are orthogonal; Free substrate growth graphene.
In one embodiment of the present invention, the present invention comprises a method of manufacturing an electronic component, characterized in that it comprises a method of manufacturing an uncatalyzed substrate growth graphene.
In one embodiment of the present invention, a method of manufacturing an electronic component may mean a method of manufacturing a transistor, but the present invention is not limited thereto.
In one embodiment of the present invention, a manufacturing method of an electronic component may mean a manufacturing method of a central processing unit (CPU).
In one embodiment of the present invention, a method of manufacturing an electronic component may refer to a method of manufacturing a memory.
In one embodiment of the present invention, the present invention comprises an electronic component, characterized by comprising a method of manufacturing an electronic component, characterized in that it comprises a method of manufacturing a non-catalytic substrate growth graphene.
In one embodiment of the present invention, the present invention comprises an electronic component characterized by comprising a non-catalytic substrate growth graphene.
In one embodiment of the present invention, the electronic component is a transistor; But is not limited thereto.
In one embodiment of the present invention, a transistor means a transistor including a graphen transistor.
In one embodiment of the present invention, the electronic component is a central processing unit (CPU); .
In one embodiment of the present invention, the electronic component is a memory; .
''
In one embodiment of the present invention,
a. A substrate having a substrate layer formed thereon,
b. Supplying a carbon-containing gas and performing plasma-enhanced chemical vapor deposition (PECVD)
c. In the heteroepitaxial growth type of Van der Waals type which is generated nuclei on the surface of the substrate layer by adsorbing, diffusing and the hydrocarbon radicals, Growing graphene on a substrate layer; The method comprising the steps of:
In one embodiment of the present invention,
a. A substrate having a substrate layer formed thereon,
b. Supplying a carbon-containing gas and performing plasma-enhanced chemical vapor deposition (PECVD)
c. In the growth type of van der Waals type which is generated nuclei on the surface of the substrate layer by adsorbing, diffusing and the hydrocarbon radicals, graphene is deposited on the substrate layer without the catalyst layer Growing; The method comprising the steps of:
In one embodiment of the present invention,
a. A substrate having a substrate layer formed thereon,
b. Supplying a carbon-containing gas and performing plasma-enhanced chemical vapor deposition (PECVD)
c. In a heteroepitaxial growth type of van der Waals type nucleated on the surface of the substrate layer, adsorbing, diffusing, and the like of hydrocarbon radicals, Including growing graphene on a substrate layer; The method comprising the steps of:
In one embodiment of the present invention,
a. A substrate having a substrate layer formed thereon,
b. Supplying a carbon-containing gas and performing plasma-enhanced chemical vapor deposition (PECVD)
c. In the growth type of van der Waals type which is generated nuclei on the surface of the substrate layer by adsorbing, diffusing and the hydrocarbon radicals, graphene is deposited on the substrate layer without the catalyst layer Including growing; The method comprising the steps of:
In one embodiment of the present invention, the carbon-containing gas supply
The concentration distribution of the carbon-containing gas in the substrate layer is made non-uniform,
Controlling the direction of growth of graphene; . Of course, in one embodiment of the present invention, the starting point of graphene growth may be nucleation of graphene at undesired locations as well as at locations to be presented in the present invention, Can be understood as neglecting the nucleation of graphene generated in the graphene.
In one embodiment of the present invention, the carbon-containing gas supply
The concentration of the carbon-containing gas is set to be high in a specific region of the substrate layer,
Grown to a graphene in a specific region of the substrate layer; . Of course, in one embodiment of the present invention, the starting point of graphene growth may be nucleation of graphene at undesired locations as well as at locations to be presented in the present invention, Can be understood as neglecting the nucleation of graphene generated in the graphene.
In one embodiment of the present invention,
The carbon-containing gas supply is performed by growing the graphene in a direction parallel to the surface of the substrate as the concentration distribution in the direction parallel to the surface of the substrate becomes uneven in the concentration distribution of the carbon-containing gas in the substrate layer ; . Of course, in one embodiment of the present invention, the starting point of graphene growth may be nucleation of graphene at undesired locations as well as at locations to be presented in the present invention, Can be understood as neglecting the nucleation of graphene generated in the graphene.
In one embodiment of the present invention,
a. Loading a substrate into a deposition chamber to form a substrate layer on the substrate; And
b. Loading the substrate into a PECVD chamber and supplying a carbon-containing gas to form an uncatalyzed substrate growth graphene by PECVD; , ≪ / RTI &
c. The substrate being sequentially loaded into the deposition chamber and the PECVD chamber using a load-locked chamber; The method comprising the steps of:
In one embodiment of the present invention,
a. Loading a substrate into a deposition chamber to form a substrate layer on the substrate; And
b. Selectively etching the substrate layer formed on the substrate by sequentially loading the substrate into chambers for performing selective etching; And
c. Loading the substrate into a PECVD chamber and supplying a carbon-containing gas to form an uncatalyzed substrate growth graphene by PECVD; , ≪ / RTI &
d. The substrate being sequentially loaded using a load-locked chamber; The method comprising the steps of:
In one embodiment of the present invention,
a. Loading a substrate into a deposition chamber to form a substrate layer on the substrate; And
b. Loading the substrate into a CMP chamber and performing a CMP process on the substrate layer formed on the substrate; And
c. Loading the substrate into a PECVD chamber and supplying a carbon-containing gas to form an uncatalyzed substrate growth graphene by PECVD; , ≪ / RTI &
d. The substrate being sequentially loaded using a load-locked chamber; The method comprising the steps of:
In one embodiment of the present invention,
a. Loading a substrate into a deposition chamber to form a substrate layer on the substrate; And
b. Loading the substrate into a CMP chamber and performing a CMP process on the substrate layer formed on the substrate; And
c. Selectively etching the substrate layer formed on the substrate by sequentially loading the substrate into chambers for performing selective etching; And
d. Loading the substrate into a PECVD chamber and supplying a carbon-containing gas to form an uncatalyzed substrate growth graphene by PECVD; , ≪ / RTI &
e. The substrate being sequentially loaded using a load-locked chamber; The method comprising the steps of:
In one embodiment of the present invention, the method of making the non-catalyst substrate grown graphene comprises
Further comprising cooling the graphene grown on the substrate layer; The method comprising the steps of:
In one embodiment of the present invention,
a. Forming a substrate layer on the substrate, and
b. Uniformly configuring the concentration distribution of the carbon-containing gas in the substrate layer, and
c. Performing PECVD, and
d. In the heteroepitaxial growth type of Van der Waals type which is generated nuclei on the surface of the substrate layer by adsorbing, diffusing and the hydrocarbon radicals, And growing graphene on the substrate layer; The method comprising the steps of:
In one embodiment of the present invention,
a. Forming a substrate layer on the substrate, and
b. Increasing the concentration of the carbon-containing gas in a specific region of the substrate layer in the substrate layer, and
c. Performing PECVD, and
d. A heteroepitaxial growth type of Van der Waals type nucleated on the surface of a substrate layer and adsorbing and diffusing hydrocarbon radicals on the surface of the substrate layer, (Of course, in one embodiment of the present invention, the starting point of graphene growth is not only the position to be proposed in the present invention, but also the nucleation of graphene occurs at an undesired position But it can be understood that the nucleation of graphene occurring at such an undesired position is properly ignored), and
e. The growth direction of graphene is such that graphene grows in a parallel direction in a specific region of the substrate layer, and
f. Finally including the step of forming graphene; The method comprising the steps of:
In one embodiment of the present invention,
a. Forming a substrate layer on the substrate, and
b. Uniformly configuring the concentration distribution of the carbon-containing gas in the substrate layer, and
c. Performing PECVD, and
d. In the growth type of van der Waals type which is generated nuclei on the surface of the substrate layer by adsorbing, diffusing and the hydrocarbon radicals, graphene is deposited on the substrate layer without the catalyst layer Including the step of growing; The method comprising the steps of:
In one embodiment of the present invention,
a. Forming a substrate layer on the substrate, and
b. Increasing the concentration of the carbon-containing gas in a specific region of the substrate layer in the substrate layer, and
c. Performing PECVD, and
d. Growing to a graphene in a specific region of the substrate layer with a growth type of van der Waals type nucleated on the surface of the substrate layer, adsorbing, diffusing, and hydrocarbyl radicals (Of course, in one embodiment of the present invention, at the beginning of the growth of graphene, nucleation of graphene may occur not only in the position to be proposed in the present invention but also in unwanted positions, It can be understood that the nucleation of graphene generated at the position is appropriately ignored), and
e. The growth direction of graphene is such that graphene grows in a parallel direction in a specific region of the substrate layer, and
f. Finally including the step of forming graphene; The method comprising the steps of:
In one embodiment of the present invention,
Graphene which grows in a first direction parallel to the surface of the substrate and which is in direct contact with the substrate layer is produced by a process for producing a noncatalyst substrate growth graphene,
Preparing surface graphenes growing in a second direction parallel to the surface from the graphenes and in direct contact with the substrate layer by a method of manufacturing a non-catalyst substrate growth graphene; The method comprising the steps of: In addition, in an embodiment of the present invention, the present invention further comprises cooling the graphene, further comprising cooling the plane graphene; The method comprising the steps of:
In one embodiment of the present invention,
With non-catalytic substrate growth graphene,
The non-catalyst substrate growth graphene directly contacts the surface of the substrate layer,
The crystal grain size in the first direction parallel to the surface of the non-catalyst substrate growth graphene is larger than the crystal grain size in any other direction parallel to the surface of the non-catalyst substrate growth graphene,
The grains in the first direction of the non-catalyst substrate growth grains are larger than the grains in the direction perpendicular to the surface of the grains; Free substrate growth graphene.
In one embodiment of the present invention,
With non-catalytic substrate growth graphene,
The noncatalytic substrate growth graphene directly contacts the surface of the substrate layer,
Wherein said non-catalytic substrate growth graphene has a grain boundary along a first direction parallel to said surface,
The corresponding noncatalytic substrate growth graphene having a grain boundary along a second direction parallel to the surface; Free substrate growth graphene. In addition, in an embodiment of the present invention, the present invention is characterized in that the first direction and the second direction are orthogonal; Free substrate growth graphene.
In one embodiment of the present invention,
With non-catalytic substrate growth graphene,
The noncatalytic substrate growth graphene directly contacts the surface of the substrate layer,
The non-catalytic substrate-grown graphene has a plurality of grain boundaries along a first direction parallel to the surface,
The corresponding noncatalytic substrate growth graphene having a plurality of crystal grain boundaries along a second direction parallel to the surface; Free substrate growth graphene. In addition, in an embodiment of the present invention, the present invention is characterized in that the first direction and the second direction are orthogonal; Free substrate growth graphene.
In one embodiment of the present invention, the present invention comprises a method of manufacturing an electronic component, characterized in that it comprises a method of manufacturing an uncatalyzed substrate growth graphene.
In one embodiment of the present invention, the present invention comprises an electronic component, characterized by comprising a method of manufacturing an electronic component, characterized in that it comprises a method of manufacturing a non-catalytic substrate growth graphene.
In one embodiment of the present invention, the present invention comprises an electronic component characterized by comprising a non-catalytic substrate growth graphene.
In one embodiment of the present invention,
a. A substrate having a substrate layer formed thereon,
b. Supplying a carbon-containing gas and performing plasma-enhanced chemical vapor deposition (PECVD)
c. A heteroepitaxial growth type of van der Waals type nucleated on the surface of a substrate layer and adsorbing and diffusing compound radicals containing carbon and a catalyst layer Including growing graphene on a substrate layer in the absence of the substrate; The method comprising the steps of:
In one embodiment of the present invention,
a. A substrate having a substrate layer formed thereon,
b. Supplying a carbon-containing gas and performing plasma-enhanced chemical vapor deposition (PECVD)
c. In a growing type of van der Waals type that occurs as a nucleus on the surface of a substrate layer, adsorbing, diffusing, and compound radicals containing carbon are formed on the substrate layer in the absence of a catalyst layer Including growing graphene; The method comprising the steps of:
In one embodiment of the present invention,
a. A substrate having a substrate layer formed thereon,
b. Supplying a carbon-containing gas and performing plasma-enhanced chemical vapor deposition (PECVD)
c. In the heteroepitaxial growth type of Van der Waals type nucleated on the surface of the substrate layer and adsorbing, diffusing and decomposing decomposition products of carbon-containing compounds, Including growing graphene on a substrate layer in the state of < RTI ID = 0.0 > The method comprising the steps of:
In one embodiment of the present invention,
a. A substrate having a substrate layer formed thereon,
b. Supplying a carbon-containing gas and performing plasma-enhanced chemical vapor deposition (PECVD)
c. In the growth type of Van der Waals type which is nucleated on the surface of the substrate layer, adsorption, diffuse and decomposition of the decomposition product of the carbon-containing compound, graphene ; ≪ / RTI > The method comprising the steps of:
In one embodiment of the present invention, the carbon-containing gas supply
The concentration distribution of the carbon-containing gas in the substrate layer is made non-uniform,
Controlling the direction of growth of graphene; . Of course, in one embodiment of the present invention, the starting point of graphene growth may be nucleation of graphene at undesired locations as well as at locations to be presented in the present invention, Can be understood as neglecting the nucleation of graphene,
In one embodiment of the present invention, the carbon-containing gas supply
The concentration of the carbon-containing gas is set to be high in a specific region of the substrate layer,
Grown to a graphene in a specific region of the substrate layer; . Of course, in one embodiment of the present invention, the starting point of graphene growth may be nucleation of graphene at undesired locations as well as at locations to be presented in the present invention, Can be understood as neglecting the nucleation of graphene,
In one embodiment of the present invention, the carbon-containing gas supply has a concentration distribution in the direction parallel to the surface of the substrate among the concentration distribution of the carbon-containing gas in the substrate layer, To grow graphene in the direction of; . Of course, in one embodiment of the present invention, the starting point of graphene growth may be nucleation of graphene at undesired locations as well as at locations to be presented in the present invention, Can be understood as neglecting the nucleation of graphene,
In one embodiment of the present invention,
Further comprising cooling the graphene grown on the substrate layer; The method comprising the steps of:
In one embodiment of the present invention,
A method of manufacturing an electronic component characterized by including a method of manufacturing a noncatalyst substrate grown graphene.
In one embodiment of the present invention,
A method for manufacturing an electronic component characterized by including a method of manufacturing a non-catalyst substrate-grown graphene.
In one embodiment of the present invention, a method for producing an uncatalyzed substrate growth graphene can be described as follows.
(One). Thereby increasing the concentration of the carbon-containing gas in a specific region of the substrate layer in the substrate layer.
(2). PECVD is performed.
(3). Then, in the type of heteroepitaxial growth of van der Waals type which is generated nuclei on the surface of the substrate layer by adsorbing, diffusing and adsorbing compound radicals containing carbon, And grow to graphene in a specific region of the substrate layer. Of course, in one embodiment of the present invention, graphene nucleation may occur not only at a position to be proposed in the present invention but also at an undesired position, It can be understood that the nucleation of the generated graphenes is properly ignored.
(4). If the PECVD is continuously performed in this way, the grown graphene grows further. Since the concentration of the carbon-containing gas is increased in a specific region of the substrate layer while maintaining the PECVD, the carbon grows to have a crystal structure with already grown graphene. At this time, graphenes grow in a direction parallel to the specific region of the substrate layer.
(5). And finally, graphene is formed on the surface of the substrate.
In one embodiment of the present invention, this embodiment is a method of manufacturing an uncatalyzed substrate growth graphene. The method for producing the non-catalyst substrate grown graphene is described as <A> or <B> below.
<A>
(One). Thereby increasing the concentration of the carbon-containing gas in a specific region of the substrate layer in the substrate layer.
(2). PECVD is performed.
(3). Then, in the type of heteroepitaxial growth of van der Waals type which is generated nuclei on the surface of the substrate layer by adsorbing, diffusing and adsorbing compound radicals containing carbon, And grow to graphene in a specific region of the substrate layer. Of course, in one embodiment of the present invention, graphene nucleation may occur not only at a position to be proposed in the present invention but also at an undesired position, It can be understood that the nucleation of the generated graphenes is properly ignored.
(4). If the PECVD is continuously performed in this way, the grown graphene grows further. Since the concentration of the carbon-containing gas is increased in a specific region of the substrate layer while maintaining the PECVD, the carbon grows to have a crystal structure with already grown graphene. At this time, graphenes grow in a direction parallel to the specific region of the substrate layer.
(5). And finally, graphene is formed on the surface of the substrate.
<B>
This embodiment is a method for producing graphene without catalyst for growing graphene when carrying out the above embodiment <A> .
(One). Based on the techniques described in Example <A>, carbon in a specific area of the alignment layer of the substrate in the substrate layer, it increases the density of the contained gas.
(2). Based on the techniques described in Example <A>, non-catalytic substrate growth yes performs the manufacturing method of the pin. Then graphene grows in a certain region of the substrate layer. Of course, in one embodiment of the present invention, the starting point of graphene growth may be nucleation of graphene at undesired locations as well as at locations to be presented in the present invention, Can be understood as neglecting the nucleation of graphene,
(3). (1) to (3), in which graphene is formed when the production method of the non-catalyst substrate grown graphene is completed.
In one embodiment of the present invention, this embodiment is a method of manufacturing an uncatalyzed substrate growth graphene. The method for producing the non-catalyst substrate grown graphene is described as <A> or <B> below.
<A>
(One). Thereby increasing the concentration of the carbon-containing gas in a specific region of the substrate layer in the substrate layer.
(2). PECVD is performed.
(3). Then, in the type of heteroepitaxial growth of van der Waals type which is generated nuclei on the surface of the substrate layer by adsorbing, diffusing and adsorbing compound radicals containing carbon, And grow to graphene in a specific region of the substrate layer. Of course, in one embodiment of the present invention, graphene nucleation may occur not only at a position to be proposed in the present invention but also at an undesired position, It can be understood that the nucleation of the generated graphenes is properly ignored.
(4). If the PECVD is continuously performed in this way, the grown graphene grows further. Since the concentration of the carbon-containing gas is increased in a specific region of the substrate layer while maintaining the PECVD, the carbon grows to have a crystal structure with already grown graphene. At this time, graphenes grow in a direction parallel to the specific region of the substrate layer.
(5). And finally, graphene is formed on the surface of the substrate.
<B>
This embodiment is a method for producing graphene on a non-catalyst substrate in which plane graphenes are produced when the above embodiment <A> is repeated twice.
(One). Based on the techniques described in Example <A>, carbon in a specific area of the alignment layer of the substrate in the substrate layer, it increases the density of the contained gas.
(2). Based on the techniques described in Example <A>, non-catalytic substrate growth yes performs the manufacturing method of the pin. Then graphene grows in a certain region of the substrate layer. Of course, in one embodiment of the present invention, the starting point of graphene growth may be nucleation of graphene at undesired locations as well as at locations to be presented in the present invention, Can be understood as neglecting the nucleation of graphene,
(3). Non-catalytic substrate growth When graphene production is completed, graphene is formed.
(4). Thereafter, on the graphene layer of the substrate layer, on the basis of the description of the embodiment described above, a specific region in the direction parallel to the long direction of the graphene and perpendicular to the long direction of the graphene Increases the concentration of carbon-containing gas.
(5). Then, on the basis of the techniques described in Example <A>, non-catalytic substrate growth yes performs the manufacturing method of the pin. Then, the remaining graphen is set as the starting position, and the plane graphen grows in the direction perpendicular to the long direction of graphene.
(6). (1) to (6), wherein the surface graphene is formed when the production method of the non-catalyst substrate-grown graphene is completed.
In one embodiment of the present invention, this embodiment is a method of manufacturing an uncatalyzed substrate growth graphene. The method for producing the non-catalyst substrate grown graphene is described as <A> or <B> below.
<A>
(One). Thereby increasing the concentration of the carbon-containing gas in a specific region of the substrate layer in the substrate layer.
(2). PECVD is performed.
(3). Then, in a growth type of Van der Waals type which is nucleated on the surface of the substrate layer, adsorption, diffusion of compound radicals containing carbon, And grow to a pin. Of course, in one embodiment of the present invention, graphene nucleation may occur not only at a position to be proposed in the present invention but also at an undesired position, It can be understood that the nucleation of the generated graphenes is properly ignored.
(4). If the PECVD is continuously performed in this way, the grown graphene grows further. Since the concentration of the carbon-containing gas is increased in a specific region of the substrate layer while maintaining the PECVD, the carbon grows to have a crystal structure with already grown graphene. At this time, graphenes grow in a direction parallel to the specific region of the substrate layer.
(5). And finally, graphene is formed on the surface of the substrate.
<B>
This embodiment is a method for producing graphene without catalyst for growing graphene when carrying out the above embodiment <A> .
(One). Based on the techniques described in Example <A>, carbon in a specific area of the alignment layer of the substrate in the substrate layer, it increases the density of the contained gas.
(2). Based on the techniques described in Example <A>, non-catalytic substrate growth yes performs the manufacturing method of the pin. Then graphene grows in a certain region of the substrate layer. Of course, in one embodiment of the present invention, the starting point of graphene growth may be nucleation of graphene at undesired locations as well as at locations to be presented in the present invention, Can be understood as neglecting the nucleation of graphene,
(3). (1) to (3), in which graphene is formed when the production method of the non-catalyst substrate grown graphene is completed.
In one embodiment of the present invention, this embodiment is a method of manufacturing an uncatalyzed substrate growth graphene. The method for producing the non-catalyst substrate grown graphene is described as <A> or <B> below.
<A>
(One). Thereby increasing the concentration of the carbon-containing gas in a specific region of the substrate layer in the substrate layer.
(2). PECVD is performed.
(3). Then, in a growth type of Van der Waals type which is nucleated on the surface of the substrate layer, adsorption, diffusion of compound radicals containing carbon, And grow to a pin. Of course, in one embodiment of the present invention, graphene nucleation may occur not only at a position to be proposed in the present invention but also at an undesired position, It can be understood that the nucleation of the generated graphenes is properly ignored.
(4). If the PECVD is continuously performed in this way, the grown graphene grows further. Since the concentration of the carbon-containing gas is increased in a specific region of the substrate layer while maintaining the PECVD, the carbon grows to have a crystal structure with already grown graphene. At this time, graphenes grow in a direction parallel to the specific region of the substrate layer.
(5). And finally, graphene is formed on the surface of the substrate.
<B>
This embodiment is a method for producing graphene on a non-catalyst substrate in which plane graphenes are produced when the above embodiment <A> is repeated twice.
(One). Based on the techniques described in Example <A>, carbon in a specific area of the alignment layer of the substrate in the substrate layer, it increases the density of the contained gas.
(2). Based on the techniques described in Example <A>, non-catalytic substrate growth yes performs the manufacturing method of the pin. Then graphene grows in a certain region of the substrate layer. Of course, in one embodiment of the present invention, the starting point of graphene growth may be nucleation of graphene at undesired locations as well as at locations to be presented in the present invention, Can be understood as neglecting the nucleation of graphene,
(3). Non-catalytic substrate growth When graphene production is completed, graphene is formed.
(4). Thereafter, on the graphene layer of the substrate layer, on the basis of the description of the embodiment described above, a specific region in the direction parallel to the long direction of the graphene and perpendicular to the long direction of the graphene Increases the concentration of carbon-containing gas.
(5). Then, on the basis of the techniques described in Example <A>, non-catalytic substrate growth yes performs the manufacturing method of the pin. Then, the remaining graphen is set as the starting position, and the plane graphen grows in the direction perpendicular to the long direction of graphene.
(6). (1) to (6), wherein the surface graphene is formed when the production method of the non-catalyst substrate-grown graphene is completed.
In one embodiment of the present invention, this embodiment is a method of manufacturing an uncatalyzed substrate growth graphene. The method for producing the non-catalyst substrate grown graphene is described as <A> or <B> below.
<A>
(One). The concentration of the carbon-containing gas is increased in a certain region on the substrate layer in the substrate layer.
(2). PECVD is performed.
(3). Then, in the type of heteroepitaxial growth of van der Waals type which is generated nuclei on the surface of the substrate layer by adsorbing, diffusing and adsorbing compound radicals containing carbon, And grow to graphene in a specific region of the substrate layer. Of course, in one embodiment of the present invention, graphene nucleation may occur not only at a position to be proposed in the present invention but also at an undesired position, It can be understood that the nucleation of the generated graphenes is properly ignored.
(4). If the PECVD is continuously performed in this way, the grown graphene grows further. The concentration of the carbon-containing gas is increased in a specific region on the substrate layer while maintaining the PECVD. Therefore, the carbon grows to have a crystal structure with the already-grown graphene. At this time, graphenes grow in a direction parallel to the line in a specific region of the substrate layer.
(5). And finally, graphene is formed on the surface of the substrate.
<B>
(One). After the description of the embodiment A , the concentration of the carbon-containing gas is increased in a specific region on the left side of the substrate layer which is perpendicular to the longitudinal direction of graphene.
(2). Then, on the basis of the description of the embodiment A , a method for manufacturing the non-catalyst substrate growth graphene is carried out. Then, with the graphene remaining as the starting position, the plane graphen grows from right to left, which is perpendicular to the long direction of graphene.
(3). And finally the surface graphenes are brought into direct contact with the surface of the substrate.
In one embodiment of the present invention, this embodiment is a method of manufacturing an uncatalyzed substrate growth graphene. The method for producing the non-catalyst substrate grown graphene is described as <A> or <B> below.
<A>
(One). The concentration of the carbon-containing gas is increased in a certain region on the substrate layer in the substrate layer.
(2). PECVD is performed.
(3). Then, in a growth type of Van der Waals type which is nucleated on the surface of the substrate layer, adsorption, diffusion of compound radicals containing carbon, And grow to a pin. Of course, in one embodiment of the present invention, graphene nucleation may occur not only at a position to be proposed in the present invention but also at an undesired position, It can be understood that the nucleation of the generated graphenes is properly ignored.
(4). If the PECVD is continuously performed in this way, the grown graphene grows further. The concentration of the carbon-containing gas is increased in a specific region on the substrate layer while maintaining the PECVD. Therefore, the carbon grows to have a crystal structure with the already-grown graphene. At this time, graphenes grow in a direction parallel to the line in a specific region of the substrate layer.
(5). And finally, graphene is formed on the surface of the substrate.
<B>
(One). After the description of the embodiment A , the concentration of the carbon-containing gas is increased in a specific region on the left side of the substrate layer which is perpendicular to the longitudinal direction of graphene.
(2). Then, on the basis of the description of the embodiment A , a method for manufacturing the non-catalyst substrate growth graphene is carried out. Then, with the graphene remaining as the starting position, the plane graphen grows from right to left, which is perpendicular to the long direction of graphene.
(3). And finally the surface graphenes are brought into direct contact with the surface of the substrate.
In one embodiment of the present invention, a method for producing an uncatalyzed substrate growth graphene can be described as follows.
(One). The shape of the substrate layer is formed to have a three-dimensional height. In one embodiment of the present invention, a resist mask or the like may be used to remove the substrate layer from being formed at a portion other than the necessary portion.
(2). Thereby increasing the concentration of the carbon-containing gas in a specific region of the substrate layer in the substrate layer.
(3). PECVD is performed.
(4). Then, in the type of heteroepitaxial growth of van der Waals type which is generated nuclei on the surface of the substrate layer by adsorbing, diffusing and adsorbing compound radicals containing carbon, And grow to graphene in a specific region of the substrate layer. Of course, in one embodiment of the present invention, graphene nucleation may occur not only at a position to be proposed in the present invention but also at an undesired position, It can be understood that the nucleation of the generated graphenes is properly ignored.
(5). If the PECVD is continuously performed in this way, the grown graphene grows further. Since the concentration of the carbon-containing gas is increased in a specific region of the substrate layer while maintaining the PECVD, the carbon grows to have a crystal structure with already grown graphene. At this time, graphenes grow in a direction parallel to the specific region of the substrate layer.
(6). (1) to (6), wherein the graphene is finally provided with a three-dimensional height.
In one embodiment of the present invention, a method for producing an uncatalyzed substrate growth graphene can be described as follows.
(One). The shape of the substrate layer is formed to have a three-dimensional height. In one embodiment of the present invention, a resist mask or the like may be used to remove the substrate layer from being formed at a portion other than the necessary portion.
(2). Thereby increasing the concentration of the carbon-containing gas in a specific region of the substrate layer in the substrate layer.
(3). PECVD is performed.
(4). Then, in a growth type of Van der Waals type which is nucleated on the surface of the substrate layer, adsorption, diffusion of compound radicals containing carbon, And grow to a pin. Of course, in one embodiment of the present invention, graphene nucleation may occur not only at a position to be proposed in the present invention but also at an undesired position, It can be understood that the nucleation of the generated graphenes is properly ignored.
(5). If the PECVD is continuously performed in this way, the grown graphene grows further. Since the concentration of the carbon-containing gas is increased in a specific region of the substrate layer while maintaining the PECVD, the carbon grows to have a crystal structure with already grown graphene. At this time, graphenes grow in a direction parallel to the specific region of the substrate layer.
(6). (1) to (6), wherein the graphene is finally provided with a three-dimensional height.
In one embodiment of the present invention, a method for producing an uncatalyzed substrate growth graphene can be described as follows.
(One). Thereby increasing the concentration of the carbon-containing gas in a specific region of the substrate layer in the substrate layer.
(2). PECVD is performed.
(3). Then, in a heteroepitaxial growth type of Van der Waals type nucleated on the surface of the substrate layer, adsorbing, diffusing and decomposing decomposition products of the carbon-containing compound, Gt; graphene < / RTI > Of course, in one embodiment of the present invention, graphene nucleation may occur not only at a position to be proposed in the present invention but also at an undesired position, It can be understood that the nucleation of the generated graphenes is properly ignored.
(4). If the PECVD is continuously performed in this way, the grown graphene grows further. Since the concentration of the carbon-containing gas is increased in a specific region of the substrate layer while maintaining the PECVD, the carbon grows to have a crystal structure with already grown graphene. At this time, graphenes grow in a direction parallel to the specific region of the substrate layer.
(5). And finally, graphene is formed on the surface of the substrate.
In one embodiment of the present invention, this embodiment is a method of manufacturing an uncatalyzed substrate growth graphene. The method for producing the non-catalyst substrate grown graphene is described as <A> or <B> below.
<A>
(One). Thereby increasing the concentration of the carbon-containing gas in a specific region of the substrate layer in the substrate layer.
(2). PECVD is performed.
(3). Then, in a heteroepitaxial growth type of Van der Waals type nucleated on the surface of the substrate layer, adsorbing, diffusing and decomposing decomposition products of the carbon-containing compound, Gt; graphene < / RTI > Of course, in one embodiment of the present invention, graphene nucleation may occur not only at a position to be proposed in the present invention but also at an undesired position, It can be understood that the nucleation of the generated graphenes is properly ignored.
(4). If the PECVD is continuously performed in this way, the grown graphene grows further. Since the concentration of the carbon-containing gas is increased in a specific region of the substrate layer while maintaining the PECVD, the carbon grows to have a crystal structure with already grown graphene. At this time, graphenes grow in a direction parallel to the specific region of the substrate layer.
(5). And finally, graphene is formed on the surface of the substrate.
<B>
This embodiment is a method for producing graphene without catalyst for growing graphene when carrying out the above embodiment <A> .
(One). Based on the techniques described in Example <A>, carbon in a specific area of the alignment layer of the substrate in the substrate layer, it increases the density of the contained gas.
(2). Based on the techniques described in Example <A>, non-catalytic substrate growth yes performs the manufacturing method of the pin. Then graphene grows in a certain region of the substrate layer. Of course, in one embodiment of the present invention, the starting point of graphene growth may be nucleation of graphene at undesired locations as well as at locations to be presented in the present invention, Can be understood as neglecting the nucleation of graphene,
(3). (1) to (3), in which graphene is formed when the production method of the non-catalyst substrate grown graphene is completed.
In one embodiment of the present invention, this embodiment is a method of manufacturing an uncatalyzed substrate growth graphene. The method for producing the non-catalyst substrate grown graphene is described as <A> or <B> below.
<A>
(One). Thereby increasing the concentration of the carbon-containing gas in a specific region of the substrate layer in the substrate layer.
(2). PECVD is performed.
(3). Then, in a heteroepitaxial growth type of Van der Waals type nucleated on the surface of the substrate layer, adsorbing, diffusing and decomposing decomposition products of the carbon-containing compound, Gt; graphene < / RTI > Of course, in one embodiment of the present invention, graphene nucleation may occur not only at a position to be proposed in the present invention but also at an undesired position, It can be understood that the nucleation of the generated graphenes is properly ignored.
(4). If the PECVD is continuously performed in this way, the grown graphene grows further. Since the concentration of the carbon-containing gas is increased in a specific region of the substrate layer while maintaining the PECVD, the carbon grows to have a crystal structure with already grown graphene. At this time, graphenes grow in a direction parallel to the specific region of the substrate layer.
(5). And finally, graphene is formed on the surface of the substrate.
<B>
This embodiment is a method for producing graphene on a non-catalyst substrate in which plane graphenes are produced when the above embodiment <A> is repeated twice.
(One). Based on the techniques described in Example <A>, carbon in a specific area of the alignment layer of the substrate in the substrate layer, it increases the density of the contained gas.
(2). Based on the techniques described in Example <A>, non-catalytic substrate growth yes performs the manufacturing method of the pin. Then graphene grows in a certain region of the substrate layer. Of course, in one embodiment of the present invention, the starting point of graphene growth may be nucleation of graphene at undesired locations as well as at locations to be presented in the present invention, Can be understood as neglecting the nucleation of graphene,
(3). Non-catalytic substrate growth When graphene production is completed, graphene is formed.
(4). Thereafter, the graphene on top of the substrate layer, based on the techniques described in Example <A>, well being parallel to the longitudinal direction of the pin, yes and the longitudinal direction of the fin is in a specific area of the side of the vertical direction Increases the concentration of carbon-containing gas.
(5). Then, on the basis of the techniques described in Example <A>, non-catalytic substrate growth yes performs the manufacturing method of the pin. Then, the remaining graphen is set as the starting position, and the plane graphen grows in the direction perpendicular to the long direction of graphene.
(6). (1) to (6), wherein the surface graphene is formed when the production method of the non-catalyst substrate-grown graphene is completed.
In one embodiment of the present invention, this embodiment is a method of manufacturing an uncatalyzed substrate growth graphene. The method for producing the non-catalyst substrate grown graphene is described as <A> or <B> below.
<A>
(One). Thereby increasing the concentration of the carbon-containing gas in a specific region of the substrate layer in the substrate layer.
(2). PECVD is performed.
(3). Then, as a growth type of van der Waals type which is generated nuclei on the surface of the substrate layer, adsorbing, diffusing and decomposing decomposition products of the carbon-containing compound, Growth. Of course, in one embodiment of the present invention, graphene nucleation may occur not only at a position to be proposed in the present invention but also at an undesired position, It can be understood that the nucleation of the generated graphenes is properly ignored.
(4). If the PECVD is continuously performed in this way, the grown graphene grows further. Since the concentration of the carbon-containing gas is increased in a specific region of the substrate layer while maintaining the PECVD, the carbon grows to have a crystal structure with already grown graphene. At this time, graphenes grow in a direction parallel to the specific region of the substrate layer.
(5). And finally, graphene is formed on the surface of the substrate.
<B>
This embodiment is a method for producing graphene without catalyst for growing graphene when carrying out the above embodiment <A> .
(One). Based on the techniques described in Example <A>, carbon in a specific area of the alignment layer of the substrate in the substrate layer, it increases the density of the contained gas.
(2). Based on the techniques described in Example <A>, non-catalytic substrate growth yes performs the manufacturing method of the pin. Then graphene grows in a certain region of the substrate layer. Of course, in one embodiment of the present invention, the starting point of graphene growth may be nucleation of graphene at undesired locations as well as at locations to be presented in the present invention, Can be understood as neglecting the nucleation of graphene generated in the graphene.
(3). (1) to (3), in which graphene is formed when the production method of the non-catalyst substrate grown graphene is completed.
In one embodiment of the present invention, this embodiment is a method of manufacturing an uncatalyzed substrate growth graphene. The method for producing the non-catalyst substrate grown graphene is described as <A> or <B> below.
<A>
(One). Thereby increasing the concentration of the carbon-containing gas in a specific region of the substrate layer in the substrate layer.
(2). PECVD is performed.
(3). Then, as a growth type of van der Waals type which is generated nuclei on the surface of the substrate layer, adsorbing, diffusing and decomposing decomposition products of the carbon-containing compound, Growth. Of course, in one embodiment of the present invention, graphene nucleation may occur not only at a position to be proposed in the present invention but also at an undesired position, It can be understood that the nucleation of the generated graphenes is properly ignored.
(4). If the PECVD is continuously performed in this way, the grown graphene grows further. Since the concentration of the carbon-containing gas is increased in a specific region of the substrate layer while maintaining the PECVD, the carbon grows to have a crystal structure with already grown graphene. At this time, graphenes grow in a direction parallel to the specific region of the substrate layer.
(5). And finally, graphene is formed on the surface of the substrate.
<B>
This embodiment is a method for producing graphene on a non-catalyst substrate in which plane graphenes are produced when the above embodiment <A> is repeated twice.
(One). Based on the techniques described in Example <A>, carbon in a specific area of the alignment layer of the substrate in the substrate layer, it increases the density of the contained gas.
(2). Based on the techniques described in Example <A>, non-catalytic substrate growth yes performs the manufacturing method of the pin. Then graphene grows in a certain region of the substrate layer. Of course, in one embodiment of the present invention, the starting point of graphene growth may be nucleation of graphene at undesired locations as well as at locations to be presented in the present invention, Can be understood as neglecting the nucleation of graphene generated in the graphene.
(3). Non-catalytic substrate growth When graphene production is completed, graphene is formed.
(4). Thereafter, on the graphene layer of the substrate layer, on the basis of the description of the embodiment described above, a specific region in the direction parallel to the long direction of the graphene and perpendicular to the long direction of the graphene Increases the concentration of carbon-containing gas.
(5). Then, on the basis of the techniques described in Example <A>, non-catalytic substrate growth yes performs the manufacturing method of the pin. Then, the remaining graphen is set as the starting position, and the plane graphen grows in the direction perpendicular to the long direction of graphene.
(6). (1) to (6), wherein the surface graphene is formed when the production method of the non-catalyst substrate-grown graphene is completed.
In one embodiment of the present invention, this embodiment is a method of manufacturing an uncatalyzed substrate growth graphene. The method for producing the non-catalyst substrate grown graphene is described as <A> or <B> below.
<A>
(One). The concentration of the carbon-containing gas is increased in a certain region on the substrate layer in the substrate layer.
(2). PECVD is performed.
(3). Then, in a heteroepitaxial growth type of Van der Waals type nucleated on the surface of the substrate layer, adsorbing, diffusing and decomposing decomposition products of the carbon-containing compound, Gt; graphene < / RTI > Of course, in one embodiment of the present invention, graphene nucleation may occur not only at a position to be proposed in the present invention but also at an undesired position, It can be understood that the nucleation of the generated graphenes is properly ignored.
(4). If the PECVD is continuously performed in this way, the grown graphene grows further. The concentration of the carbon-containing gas is increased in a specific region on the substrate layer while maintaining the PECVD. Therefore, the carbon grows to have a crystal structure with the already-grown graphene. At this time, graphenes grow in a direction parallel to the line in a specific region of the substrate layer.
(5). And finally, graphene is formed on the surface of the substrate.
<B>
(One). After the description of the embodiment A , the concentration of the carbon-containing gas is increased in a specific region on the left side of the substrate layer which is perpendicular to the longitudinal direction of graphene.
(2). Then, on the basis of the description of the embodiment A , a method for manufacturing the non-catalyst substrate growth graphene is carried out. Then, with the graphene remaining as the starting position, the plane graphen grows from right to left, which is perpendicular to the long direction of graphene.
(3). And finally the surface graphenes are brought into direct contact with the surface of the substrate.
In one embodiment of the present invention, this embodiment is a method of manufacturing an uncatalyzed substrate growth graphene. The method for producing the non-catalyst substrate grown graphene is described as <A> or <B> below.
<A>
(One). The concentration of the carbon-containing gas is increased in a certain region on the substrate layer in the substrate layer.
(2). PECVD is performed.
(3). Then, as a growth type of van der Waals type which is generated nuclei on the surface of the substrate layer, adsorbing, diffusing and decomposing decomposition products of the carbon-containing compound, Growth. Of course, in one embodiment of the present invention, graphene nucleation may occur not only at a position to be proposed in the present invention but also at an undesired position, It can be understood that the nucleation of the generated graphenes is properly ignored.
(4). If the PECVD is continuously performed in this way, the grown graphene grows further. The concentration of the carbon-containing gas is increased in a specific region on the substrate layer while maintaining the PECVD. Therefore, the carbon grows to have a crystal structure with the already-grown graphene. At this time, graphenes grow in a direction parallel to the line in a specific region of the substrate layer.
(5). And finally, graphene is formed on the surface of the substrate.
<B>
(One). After the description of the embodiment A , the concentration of the carbon-containing gas is increased in a specific region on the left side of the substrate layer which is perpendicular to the longitudinal direction of graphene.
(2). Then, on the basis of the description of the embodiment A , a method for manufacturing the non-catalyst substrate growth graphene is carried out. Then, with the graphene remaining as the starting position, the plane graphen grows from right to left, which is perpendicular to the long direction of graphene.
(3). And finally the surface graphenes are brought into direct contact with the surface of the substrate.
In one embodiment of the present invention, a method for producing an uncatalyzed substrate growth graphene can be described as follows.
(One). The shape of the substrate layer is formed to have a three-dimensional height. In one embodiment of the present invention, a resist mask or the like may be used to remove the substrate layer from being formed at a portion other than the necessary portion.
(2). Thereby increasing the concentration of the carbon-containing gas in a specific region of the substrate layer in the substrate layer.
(3). PECVD is performed.
(4). Then, in a heteroepitaxial growth type of Van der Waals type nucleated on the surface of the substrate layer, adsorbing, diffusing and decomposing decomposition products of the carbon-containing compound, Gt; graphene < / RTI > Of course, in one embodiment of the present invention, graphene nucleation may occur not only at a position to be proposed in the present invention but also at an undesired position, It can be understood that the nucleation of the generated graphenes is properly ignored.
(5). If the PECVD is continuously performed in this way, the grown graphene grows further. Since the concentration of the carbon-containing gas is increased in a specific region of the substrate layer while maintaining the PECVD, the carbon grows to have a crystal structure with already grown graphene. At this time, graphenes grow in a direction parallel to the specific region of the substrate layer.
(6). (1) to (6), wherein the graphene is finally provided with a three-dimensional height.
In one embodiment of the present invention, a method for producing an uncatalyzed substrate growth graphene can be described as follows.
(One). The shape of the substrate layer is formed to have a three-dimensional height. In one embodiment of the present invention, a resist mask or the like may be used to remove the substrate layer from being formed at a portion other than the necessary portion.
(2). Thereby increasing the concentration of the carbon-containing gas in a specific region of the substrate layer in the substrate layer.
(3). PECVD is performed.
(4). Then, as a growth type of van der Waals type which is generated nuclei on the surface of the substrate layer, adsorbing, diffusing and decomposing decomposition products of the carbon-containing compound, Growth. Of course, in one embodiment of the present invention, graphene nucleation may occur not only at a position to be proposed in the present invention but also at an undesired position, It can be understood that the nucleation of the generated graphenes is properly ignored.
(5). If the PECVD is continuously performed in this way, the grown graphene grows further. Since the concentration of the carbon-containing gas is increased in a specific region of the substrate layer while maintaining the PECVD, the carbon grows to have a crystal structure with already grown graphene. At this time, graphenes grow in a direction parallel to the specific region of the substrate layer.
(6). (1) to (6), wherein the graphene is finally provided with a three-dimensional height.
In one embodiment of the present invention, the carbon-containing gas may be meant to include an inert gas, such as argon, in addition to the compound comprising carbon.
In one embodiment of the present invention, a substrate may refer to a substrate on which a substrate layer is formed, although not specifically described.
In one embodiment of the present invention,
a. With the substrate, thereafter,
b. Supplying a carbon-containing gas and performing plasma-enhanced chemical vapor deposition (PECVD)
c. In the heteroepitaxial growth type of van der Waals type which is generated nuclei on the surface of the substrate by adsorbing and diffusing the hydrocarbon radicals, Including growing graphene on a substrate; The method comprising the steps of:
In one embodiment of the present invention,
a. With the substrate, thereafter,
b. Supplying a carbon-containing gas and performing plasma-enhanced chemical vapor deposition (PECVD)
c. Graphene is grown on a substrate in the form of van der Waals-type growth that occurs by adsorbing, diffusing and hydrocarbon nuclei on the surface of the substrate. Including; The method comprising the steps of:
In one embodiment of the present invention,
a. With the substrate, thereafter,
b. Supplying a carbon-containing gas and performing plasma-enhanced chemical vapor deposition (PECVD)
c. A heteroepitaxial growth type of van der Waals type nucleated on the surface of a substrate and adsorbing and diffusing compound radicals containing carbon, And growing the graphene on the substrate in the absence of the graphene; The method comprising the steps of:
In one embodiment of the present invention,
a. With the substrate, thereafter,
b. Supplying a carbon-containing gas and performing plasma-enhanced chemical vapor deposition (PECVD)
c. In a growth type of van der Waals type that occurs as a nucleus on the surface of a substrate, adsorption, diffusions of compound radicals containing carbon, and the like, Including growing pins; The method comprising the steps of:
In one embodiment of the present invention,
a. With the substrate, thereafter,
b. Supplying a carbon-containing gas and performing plasma-enhanced chemical vapor deposition (PECVD)
c. In the heteroepitaxial growth type of Van der Waals type which is generated nuclei on the surface of the substrate, adsorption, diffuse and decomposition of the decomposition product of the carbon-containing compound, Including growing graphene on a substrate; The method comprising the steps of:
In one embodiment of the present invention,
a. With the substrate, thereafter,
b. Supplying a carbon-containing gas and performing plasma-enhanced chemical vapor deposition (PECVD)
c. In the growth type of Van der Waals type which is nucleated on the surface of the substrate and adsorbs, diffuses and decomposes the decomposition product of the carbon-containing compound, graphene is formed on the substrate without the catalyst layer Including growing; The method comprising the steps of:
'' _ _
In one embodiment of the present invention,
a. A substrate having a substrate layer formed thereon,
b. Supplying a carbon-containing gas and performing plasma-enhanced chemical vapor deposition (PECVD)
c. In a heteroepitaxial growth type of van der Waals type nucleated on the surface of the substrate layer, adsorbing, diffusing, and the like of hydrocarbon radicals, Including growing graphene on a substrate layer; The method comprising the steps of:
In one embodiment of the present invention,
a. A substrate having a substrate layer formed thereon,
b. Supplying a carbon-containing gas and performing plasma-enhanced chemical vapor deposition (PECVD)
c. In the growth type of van der Waals type which is generated nuclei on the surface of the substrate layer by adsorbing, diffusing and the hydrocarbon radicals, graphene is deposited on the substrate layer without the catalyst layer Including growing; The method comprising the steps of:
In one embodiment of the present invention, the method of manufacturing the non-catalytic substrate growth graphene further comprises cooling the graphene grown on the substrate layer; .
In one embodiment of the present invention,
a. Loading a substrate into a deposition chamber to form a substrate layer on the substrate; And
b. Loading the substrate into a PECVD chamber and supplying a carbon-containing gas to form an uncatalyzed substrate growth graphene by PECVD; , ≪ / RTI &
c. The substrate being sequentially loaded into the deposition chamber and the PECVD chamber using a load-locked chamber; The method comprising the steps of:
In one embodiment of the present invention,
a. Loading a substrate into a deposition chamber to form a substrate layer on the substrate; And
b. Selectively etching the substrate layer formed on the substrate by sequentially loading the substrate into chambers for performing selective etching; And
c. Loading the substrate into a PECVD chamber and supplying a carbon-containing gas to form an uncatalyzed substrate growth graphene by PECVD; , ≪ / RTI &
d. The substrate being sequentially loaded using a load-locked chamber; The method comprising the steps of:
In one embodiment of the present invention,
a. Loading a substrate into a deposition chamber to form a substrate layer on the substrate; And
b. Loading the substrate into a CMP chamber and performing a CMP process on the substrate layer formed on the substrate; And
c. Loading the substrate into a PECVD chamber and supplying a carbon-containing gas to form an uncatalyzed substrate growth graphene by PECVD; , ≪ / RTI &
d. The substrate being sequentially loaded using a load-locked chamber; The method comprising the steps of:
In one embodiment of the present invention,
a. Loading a substrate into a deposition chamber to form a substrate layer on the substrate; And
b. Loading the substrate into a CMP chamber and performing a CMP process on the substrate layer formed on the substrate; And
c. Selectively etching the substrate layer formed on the substrate by sequentially loading the substrate into chambers for performing selective etching; And
d. Loading the substrate into a PECVD chamber and supplying a carbon-containing gas to form an uncatalyzed substrate growth graphene by PECVD; , ≪ / RTI &
e. The substrate being sequentially loaded using a load-locked chamber; The method comprising the steps of:
In one embodiment of the present invention,
a. Forming a substrate layer on the substrate, and
b. Uniformly configuring the concentration distribution of the carbon-containing gas in the substrate layer, and
c. Performing PECVD, and
d. In the heteroepitaxial growth type of Van der Waals type which is generated nuclei on the surface of the substrate layer by adsorbing, diffusing and the hydrocarbon radicals, And growing graphene on the substrate layer; The method comprising the steps of:
In one embodiment of the present invention,
a. Forming a substrate layer on the substrate, and
b. Increasing the concentration of the carbon-containing gas in a specific region of the substrate layer in the substrate layer, and
c. Performing PECVD, and
d. A heteroepitaxial growth type of Van der Waals type nucleated on the surface of a substrate layer and adsorbing and diffusing hydrocarbon radicals on the surface of the substrate layer, (Of course, in one embodiment of the present invention, the starting point of graphene growth is not only the position to be proposed in the present invention, but also the nucleation of graphene occurs at an undesired position But it can be understood that the nucleation of graphene occurring at such an undesired position is properly ignored), and
e. The growth direction of graphene is such that graphene grows in a parallel direction in a specific region of the substrate layer, and
f. Finally including the step of forming graphene; The method comprising the steps of:
In one embodiment of the present invention,
a. Forming a substrate layer on the substrate, and
b. Uniformly configuring the concentration distribution of the carbon-containing gas in the substrate layer, and
c. Performing PECVD, and
d. In the growth type of van der Waals type which is generated nuclei on the surface of the substrate layer by adsorbing, diffusing and the hydrocarbon radicals, graphene is deposited on the substrate layer without the catalyst layer Including the step of growing; The method comprising the steps of:
In one embodiment of the present invention,
a. Forming a substrate layer on the substrate, and
b. Increasing the concentration of the carbon-containing gas in a specific region of the substrate layer in the substrate layer, and
c. Performing PECVD, and
d. Growing to a graphene in a specific region of the substrate layer with a growth type of van der Waals type nucleated on the surface of the substrate layer, adsorbing, diffusing, and hydrocarbyl radicals (Of course, in one embodiment of the present invention, at the beginning of the growth of graphene, nucleation of graphene may occur not only in the position to be proposed in the present invention but also in unwanted positions, It can be understood that the nucleation of graphene generated at the position is appropriately ignored), and
e. The growth direction of graphene is such that graphene grows in a parallel direction in a specific region of the substrate layer, and
f. Finally including the step of forming graphene; The present invention also provides a method of manufacturing a non-catalytic substrate growth graphene.
In one embodiment of the present invention, the present invention comprises a method of producing an uncatalyzed substrate growth graphene selected from <A>, <B>, <C> described below.
<A>
The carbon-containing gas supply
The concentration distribution of the carbon-containing gas in the substrate layer is made non-uniform,
Controlling the direction of growth of graphene; ≪ / RTI > wherein the graphene graphene is grown on a substrate. Of course, in one embodiment of the present invention, the starting point of graphene growth may be nucleation of graphene at undesired locations as well as at locations to be presented in the present invention, Can be understood as neglecting the nucleation of graphene generated in the graphene.
<B>
The carbon-containing gas supply
The concentration of the carbon-containing gas is set to be high in a specific region of the substrate layer,
Grown to a graphene in a specific region of the substrate layer; ≪ / RTI > wherein the graphene graphene is grown on a substrate. Of course, in one embodiment of the present invention, the starting point of graphene growth may be nucleation of graphene at undesired locations as well as at locations to be presented in the present invention, Can be understood as neglecting the nucleation of graphene generated in the graphene.
<C>
The carbon-containing gas supply is performed by growing the graphene in a direction parallel to the surface of the substrate as the concentration distribution in the direction parallel to the surface of the substrate becomes uneven in the concentration distribution of the carbon-containing gas in the substrate layer ; ≪ / RTI > wherein the graphene graphene is grown on a substrate. Of course, in one embodiment of the present invention, the starting point of graphene growth may be nucleation of graphene at undesired locations as well as at locations to be presented in the present invention, , <B>, <C>, described above, consisting of the formation of graphene grains, which can be understood as neglecting the nucleation of graphene, Method. In an embodiment of the present invention, the present invention also provides a method for producing a non-catalytic substrate growth graphene selected from the above-described <A>, <B>, <C> , ≪ CC >, respectively.
<A-A>
Graphene which grows in a first direction parallel to the surface of the substrate and is in direct contact with the substrate layer is produced by the method of manufacturing the noncatalyst substrate growth graphenes described in the above <A>,
Preparing surface graphenes growing in a second direction parallel to the surface from the graphene and in direct contact with the substrate layer by the method of manufacturing the noncatalyst substrate growth graphene described in the above-described <A>; Characterized in that the method comprises the steps of:
<B-B>
Graphene which grows in a first direction parallel to the surface of the substrate and is in direct contact with the substrate layer is produced by the method of manufacturing the noncatalyst substrate growth graphenes described in <B> above,
Preparing surface graphenes growing in a second direction parallel to the surface from the graphene and in direct contact with the substrate layer by the method of manufacturing the non-catalyst substrate growth graphenes described in the above-mentioned <B>; Characterized in that the method comprises the steps of:
≪ C-C &
Graphene which grows in a first direction parallel to the surface of the substrate and is in direct contact with the substrate layer is produced by the method of manufacturing the noncatalyst substrate growth graphenes described in <C>
Preparing surface graphenes growing in a second direction parallel to the surface from the graphene and in direct contact with the substrate layer by the method of manufacturing the noncatalyst substrate growth graphenes described in the above < C >; A method for producing a non-catalytic substrate-grown graphene, which is selected from among the above-mentioned <A-A>, <B-B> and <C-C>
In one embodiment of the present invention, the method of manufacturing the selected non-catalytic substrate growth grains among the above-described <AA>, <BB>, <CC> further comprises cooling the graphene, Further comprising cooling the graphene; .
In one embodiment of the present invention,
With non-catalytic substrate growth graphene,
The non-catalyst substrate growth graphene directly contacts the surface of the substrate layer,
The crystal grain size in the first direction parallel to the surface of the non-catalyst substrate growth graphene is larger than the crystal grain size in any other direction parallel to the surface of the non-catalyst substrate growth graphene,
The grains in the first direction of the non-catalyst substrate growth grains are larger than the grains in the direction perpendicular to the surface of the grains; Free substrate growth graphene.
In one embodiment of the present invention,
With non-catalytic substrate growth graphene,
The noncatalytic substrate growth graphene directly contacts the surface of the substrate layer,
Wherein said non-catalytic substrate growth graphene has a grain boundary along a first direction parallel to said surface,
The corresponding noncatalytic substrate growth graphene having a grain boundary along a second direction parallel to the surface; Free substrate growth graphene. Further, in an embodiment of the present invention, the present invention is characterized in that the first direction and the second direction are orthogonal; Free substrate growth graphene.
In one embodiment of the present invention,
With non-catalytic substrate growth graphene,
The noncatalytic substrate growth graphene directly contacts the surface of the substrate layer,
The non-catalytic substrate-grown graphene has a plurality of grain boundaries along a first direction parallel to the surface,
The corresponding noncatalytic substrate growth graphene having a plurality of crystal grain boundaries along a second direction parallel to the surface; Free substrate growth graphene. Further, in an embodiment of the present invention, the present invention is characterized in that the first direction and the second direction are orthogonal; Free substrate growth graphene.
In one embodiment of the present invention, the present invention comprises a substrate with a substrate layer and a graphene formed by the method of making the non-catalyst substrate growth graphene. In one embodiment of the present invention, the method of making the non-catalyst substrate growth graphene may utilize a load-locked chamber
In one embodiment of the present invention, the present invention comprises graphene obtained by a process for the production of an uncatalyzed substrate growth graphene.
In one embodiment of the present invention, the present invention comprises an electronic component comprising graphene obtained by the process for producing a non-catalytic substrate growth graphene.
In one embodiment of the present invention, the present invention comprises a method of manufacturing an electronic component, characterized in that it comprises a method of manufacturing an uncatalyzed substrate growth graphene.
In one embodiment of the present invention, the present invention comprises an electronic component, characterized by comprising a method of manufacturing an electronic component, characterized in that it comprises a method of manufacturing a non-catalytic substrate growth graphene.
In one embodiment of the present invention, the present invention comprises an electronic component characterized by comprising a non-catalytic substrate growth graphene.
'' __
In one embodiment of the present invention, the present invention comprises a method for producing an uncatalyzed substrate growth graphene selected from the following <A> and <B>.
<A>
In one embodiment of the present invention,
a. A substrate having a substrate layer formed thereon,
b. Supplying a carbon-containing gas and performing plasma-enhanced chemical vapor deposition (PECVD)
c. In a heteroepitaxial growth type of van der Waals type nucleated on the surface of the substrate layer, adsorbing, diffusing, and the like of hydrocarbon radicals, Including growing graphene on a substrate layer; The method comprising the steps of:
<B>
In one embodiment of the present invention,
a. A substrate having a substrate layer formed thereon,
b. Supplying a carbon-containing gas and performing plasma-enhanced chemical vapor deposition (PECVD)
c. In the growth type of van der Waals type which is generated nuclei on the surface of the substrate layer by adsorbing, diffusing and the hydrocarbon radicals, graphene is deposited on the substrate layer without the catalyst layer Including growing; The present invention also provides a method for producing a non-catalytic substrate growth graphene, which is selected from among the above-described <A> and <B> constituted by a method for producing a non-catalytic substrate growth graphene. Further, in one embodiment of the present invention, the present invention comprises graphene obtained by a process for producing a non-catalytic substrate growth graphene selected from <A> and <B> described above. Further, in one embodiment of the present invention, the present invention includes an electronic component including the graphene.
In one embodiment of the present invention, the present invention relates to a method of manufacturing an uncatalyzed substrate growth graphene,
The carbon-containing gas supply
The concentration distribution of the carbon-containing gas in the substrate layer is made non-uniform,
Controlling the direction of growth of graphene; The method comprising the steps of: Of course, in one embodiment of the present invention, the starting point of graphene growth may be nucleation of graphene at undesired locations as well as at locations to be presented in the present invention, Can be understood as neglecting the nucleation of graphene generated in the graphene.
In one embodiment of the present invention, the present invention relates to a method of manufacturing an uncatalyzed substrate growth graphene,
The carbon-containing gas supply
The concentration of the carbon-containing gas is set to be high in a specific region of the substrate layer,
Grown to a graphene in a specific region of the substrate layer; The method comprising the steps of: Of course, in one embodiment of the present invention, the starting point of graphene growth may be nucleation of graphene at undesired locations as well as at locations to be presented in the present invention, Can be understood as neglecting the nucleation of graphene generated in the graphene.
In one embodiment of the present invention, the present invention relates to a method of manufacturing an uncatalyzed substrate growth graphene,
The carbon-containing gas supply is performed by growing the graphene in a direction parallel to the surface of the substrate as the concentration distribution in the direction parallel to the surface of the substrate becomes uneven in the concentration distribution of the carbon-containing gas in the substrate layer ; The method comprising the steps of: Of course, in one embodiment of the present invention, the starting point of graphene growth may be nucleation of graphene at undesired locations as well as at locations to be presented in the present invention, Can be understood as neglecting the nucleation of graphene generated in the graphene.
In one embodiment of the present invention, the present invention further comprises cooling the graphene grown on the substrate layer; The method comprising the steps of:
In one embodiment of the present invention,
a. Loading a substrate into a deposition chamber to form a substrate layer on the substrate; And
b. Loading the substrate into a PECVD chamber and supplying a carbon-containing gas to form an uncatalyzed substrate growth graphene by PECVD; , ≪ / RTI &
c. The substrate being sequentially loaded into the deposition chamber and the PECVD chamber using a load-locked chamber; The method comprising the steps of:
In one embodiment of the present invention,
a. Loading a substrate into a deposition chamber to form a substrate layer on the substrate; And
b. Selectively etching the substrate layer formed on the substrate by sequentially loading the substrate into chambers for performing selective etching; And
c. Loading the substrate into a PECVD chamber and supplying a carbon-containing gas to form an uncatalyzed substrate growth graphene by PECVD; , ≪ / RTI &
d. The substrate being sequentially loaded using a load-locked chamber; The method comprising the steps of:
In one embodiment of the present invention,
a. Loading a substrate into a deposition chamber to form a substrate layer on the substrate; And
b. Loading the substrate into a CMP chamber and performing a CMP process on the substrate layer formed on the substrate; And
c. Loading the substrate into a PECVD chamber and supplying a carbon-containing gas to form an uncatalyzed substrate growth graphene by PECVD; , ≪ / RTI &
d. The substrate being sequentially loaded using a load-locked chamber; The method comprising the steps of:
In one embodiment of the present invention,
a. Loading a substrate into a deposition chamber to form a substrate layer on the substrate; And
b. Loading the substrate into a CMP chamber and performing a CMP process on the substrate layer formed on the substrate; And
c. Selectively etching the substrate layer formed on the substrate by sequentially loading the substrate into chambers for performing selective etching; And
d. Loading the substrate into a PECVD chamber and supplying a carbon-containing gas to form an uncatalyzed substrate growth graphene by PECVD; , ≪ / RTI &
e. The substrate being sequentially loaded using a load-locked chamber; The method comprising the steps of:
In one embodiment of the present invention,
a. Forming a substrate layer on the substrate, and
b. Uniformly configuring the concentration distribution of the carbon-containing gas in the substrate layer, and
c. Performing PECVD, and
d. In the heteroepitaxial growth type of Van der Waals type which is generated nuclei on the surface of the substrate layer by adsorbing, diffusing and the hydrocarbon radicals, And growing graphene on the substrate layer; The method comprising the steps of:
In one embodiment of the present invention,
a. Forming a substrate layer on the substrate, and
b. Increasing the concentration of the carbon-containing gas in a specific region of the substrate layer in the substrate layer, and
c. Performing PECVD, and
d. A heteroepitaxial growth type of Van der Waals type nucleated on the surface of a substrate layer and adsorbing and diffusing hydrocarbon radicals on the surface of the substrate layer, (Of course, in one embodiment of the present invention, the starting point of graphene growth is not only the position to be proposed in the present invention, but also the nucleation of graphene occurs at an undesired position But it can be understood that the nucleation of graphene occurring at such an undesired position is properly ignored), and
e. The growth direction of graphene is such that graphene grows in a parallel direction in a specific region of the substrate layer, and
f. Finally including the step of forming graphene; The method comprising the steps of:
In one embodiment of the present invention,
a. Forming a substrate layer on the substrate, and
b. Uniformly configuring the concentration distribution of the carbon-containing gas in the substrate layer, and
c. Performing PECVD, and
d. In the growth type of van der Waals type which is generated nuclei on the surface of the substrate layer by adsorbing, diffusing and the hydrocarbon radicals, graphene is deposited on the substrate layer without the catalyst layer Including the step of growing; The method comprising the steps of:
In one embodiment of the present invention,
a. Forming a substrate layer on the substrate, and
b. Increasing the concentration of the carbon-containing gas in a specific region of the substrate layer in the substrate layer, and
c. Performing PECVD, and
d. Growing to a graphene in a specific region of the substrate layer with a growth type of van der Waals type nucleated on the surface of the substrate layer, adsorbing, diffusing, and hydrocarbyl radicals (Of course, in one embodiment of the present invention, at the beginning of the growth of graphene, nucleation of graphene may occur not only in the position to be proposed in the present invention but also in unwanted positions, It can be understood that the nucleation of graphene generated at the position is appropriately ignored), and
e. The growth direction of graphene is such that graphene grows in a parallel direction in a specific region of the substrate layer, and
f. Finally including the step of forming graphene; The method comprising the steps of:
In one embodiment of the present invention, the present invention comprises a method of producing an uncatalyzed substrate growth graphene selected from <A>, <B>, <C> described below.
<A>
The carbon-containing gas supply
The concentration distribution of the carbon-containing gas in the substrate layer is made non-uniform,
Controlling the direction of growth of graphene; ≪ / RTI > wherein the graphene graphene is grown on a substrate. Of course, in one embodiment of the present invention, the starting point of graphene growth may be nucleation of graphene at undesired locations as well as at locations to be presented in the present invention, Can be understood as neglecting the nucleation of graphene generated in the graphene.
<B>
The carbon-containing gas supply
The concentration of the carbon-containing gas is set to be high in a specific region of the substrate layer,
Grown to a graphene in a specific region of the substrate layer; ≪ / RTI > wherein the graphene graphene is grown on a substrate. Of course, in one embodiment of the present invention, the starting point of graphene growth may be nucleation of graphene at undesired locations as well as at locations to be presented in the present invention, Can be understood as neglecting the nucleation of graphene generated in the graphene.
<C>
The carbon-containing gas supply is performed by growing the graphene in a direction parallel to the surface of the substrate as the concentration distribution in the direction parallel to the surface of the substrate becomes uneven in the concentration distribution of the carbon-containing gas in the substrate layer ; ≪ / RTI > wherein the graphene graphene is grown on a substrate. Of course, in one embodiment of the present invention, the starting point of graphene growth may be nucleation of graphene at undesired locations as well as at locations to be presented in the present invention, , <B>, <C>, described above, consisting of the formation of graphene grains, which can be understood as neglecting the nucleation of graphene, Method. In an embodiment of the present invention, the present invention also provides a method for producing a non-catalytic substrate growth graphene selected from the above-described <A>, <B>, <C> , ≪ CC >, respectively.
<A-A>
In one embodiment of the present invention,
Graphene which grows in a first direction parallel to the surface of the substrate and is in direct contact with the substrate layer is produced by the method of manufacturing the noncatalyst substrate growth graphenes described in the above <A>,
Preparing surface graphenes growing in a second direction parallel to the surface from the graphene and in direct contact with the substrate layer by the method of manufacturing the noncatalyst substrate growth graphene described in the above-described <A>; The method comprising the steps of:
<B-B>
In one embodiment of the present invention,
Graphene which grows in a first direction parallel to the surface of the substrate and is in direct contact with the substrate layer is produced by the method of manufacturing the noncatalyst substrate growth graphenes described in <B> above,
Preparing surface graphenes growing in a second direction parallel to the surface from the graphene and in direct contact with the substrate layer by the method of manufacturing the non-catalyst substrate growth graphenes described in the above-mentioned <B>; The method comprising the steps of:
≪ C-C &
In one embodiment of the present invention,
Graphene which grows in a first direction parallel to the surface of the substrate and is in direct contact with the substrate layer is produced by the method of manufacturing the noncatalyst substrate growth graphenes described in <C>
Preparing surface graphenes growing in a second direction parallel to the surface from the graphene and in direct contact with the substrate layer by the method of manufacturing the noncatalyst substrate growth graphenes described in the above < C >; The present invention also provides a method for producing a non-catalytic substrate growth graphene selected from <AA>, <BB> and <CC> described above, . Further, in an embodiment of the present invention, the present invention further includes cooling the graphene, further comprising cooling the plane graphene; The method comprising the steps of:
In one embodiment of the present invention,
With non-catalytic substrate growth graphene,
The non-catalyst substrate growth graphene directly contacts the surface of the substrate layer,
The crystal grain size in the first direction parallel to the surface of the non-catalyst substrate growth graphene is larger than the crystal grain size in any other direction parallel to the surface of the non-catalyst substrate growth graphene,
The grains in the first direction of the non-catalyst substrate growth grains are larger than the grains in the direction perpendicular to the surface of the grains; Free substrate growth graphene.
In one embodiment of the present invention,
With non-catalytic substrate growth graphene,
The noncatalytic substrate growth graphene directly contacts the surface of the substrate layer,
Wherein said non-catalytic substrate growth graphene has a grain boundary along a first direction parallel to said surface,
The corresponding noncatalytic substrate growth graphene having a grain boundary along a second direction parallel to the surface; Free substrate growth graphene. Further, in an embodiment of the present invention, the present invention is characterized in that the first direction and the second direction are orthogonal; Free substrate growth graphene.
In one embodiment of the present invention,
With non-catalytic substrate growth graphene,
The noncatalytic substrate growth graphene directly contacts the surface of the substrate layer,
The non-catalytic substrate-grown graphene has a plurality of grain boundaries along a first direction parallel to the surface,
The corresponding noncatalytic substrate growth graphene having a plurality of crystal grain boundaries along a second direction parallel to the surface; Free substrate growth graphene. Further, in an embodiment of the present invention, the present invention is characterized in that the first direction and the second direction are orthogonal; Free substrate growth graphene.
In one embodiment of the present invention, the present invention comprises a method of manufacturing an electronic component, characterized in that it comprises a method of manufacturing an uncatalyzed substrate growth graphene.
In one embodiment of the present invention, the present invention comprises an electronic component, characterized by comprising a method of manufacturing an electronic component, characterized in that it comprises a method of manufacturing a non-catalytic substrate growth graphene.
In one embodiment of the present invention, the present invention comprises an electronic component characterized by comprising a non-catalytic substrate growth graphene.
In one embodiment of the present invention, the present invention comprises graphene obtained by a process for the production of an uncatalyzed substrate growth graphene.
In one embodiment of the present invention, the present invention comprises an electronic component comprising graphene obtained by the process for producing a non-catalytic substrate growth graphene.
In one embodiment of the present invention,
a. Positioning a substrate provided with a substrate layer,
b. Supplying a carbon-containing gas and performing plasma-enhanced chemical vapor deposition (PECVD)
c. In a heteroepitaxial growth type of van der Waals type nucleated on the surface of the substrate layer, adsorbing, diffusing, and the like of hydrocarbon radicals, Including growing graphene on a substrate layer; The method comprising the steps of:
In one embodiment of the present invention,
a. Positioning a substrate provided with a substrate layer,
b. Supplying a carbon-containing gas and performing plasma-enhanced chemical vapor deposition (PECVD)
c. In the growth type of van der Waals type which is generated nuclei on the surface of the substrate layer by adsorbing, diffusing and the hydrocarbon radicals, graphene is deposited on the substrate layer without the catalyst layer Including growing; The method comprising the steps of:
In one embodiment of the present invention,
a. Positioning a substrate provided with a substrate layer,
b. Supplying a carbon-containing gas and performing plasma-enhanced chemical vapor deposition (PECVD)
c. A heteroepitaxial growth type of van der Waals type nucleated on the surface of a substrate layer and adsorbing and diffusing compound radicals containing carbon and a catalyst layer Including growing graphene on a substrate layer in the absence of the substrate; The method comprising the steps of:
In one embodiment of the present invention,
a. Positioning a substrate provided with a substrate layer,
b. Supplying a carbon-containing gas and performing plasma-enhanced chemical vapor deposition (PECVD)
c. In a growing type of van der Waals type that occurs as a nucleus on the surface of a substrate layer, adsorbing, diffusing, and compound radicals containing carbon are formed on the substrate layer in the absence of a catalyst layer Including growing graphene; The method comprising the steps of:
In one embodiment of the present invention,
a. Positioning a substrate provided with a substrate layer,
b. Supplying a carbon-containing gas and performing plasma-enhanced chemical vapor deposition (PECVD)
c. In the heteroepitaxial growth type of Van der Waals type nucleated on the surface of the substrate layer and adsorbing, diffusing and decomposing decomposition products of carbon-containing compounds, Including growing graphene on a substrate layer in the state of < RTI ID = 0.0 > The method comprising the steps of:
In one embodiment of the present invention,
a. Positioning a substrate provided with a substrate layer,
b. Supplying a carbon-containing gas and performing plasma-enhanced chemical vapor deposition (PECVD)
c. In the growth type of Van der Waals type which is nucleated on the surface of the substrate layer, adsorption, diffuse and decomposition of the decomposition product of the carbon-containing compound, graphene ; ≪ / RTI > The method comprising the steps of:
In one embodiment of the present invention,
Supplying and discharging a carbon-containing gas, and
Performing Plasma-Enhanced Chemical Vapor Deposition (PECVD), and
In the heteroepitaxial growth type of Van der Waals type which is generated nuclei on the surface of the substrate layer by adsorbing, diffusing and the hydrocarbon radicals, And growing graphene on the substrate layer; The method comprising the steps of:
In one embodiment of the present invention,
Supplying and discharging a carbon-containing gas, and
Performing Plasma-Enhanced Chemical Vapor Deposition (PECVD), and
In the growth type of van der Waals type which is generated nuclei on the surface of the substrate layer by adsorbing, diffusing and the hydrocarbon radicals, graphene is deposited on the substrate layer without the catalyst layer Including the step of growing; The method comprising the steps of:
In one embodiment of the present invention, the present invention is directed to a method for producing an uncatalyzed substrate growth graphene, wherein the carbon-
The concentration distribution of the carbon-containing gas in the substrate layer is made non-uniform,
Controlling the direction of growth of graphene; The method comprising the steps of: Of course, in one embodiment of the present invention, the starting point of graphene growth may be nucleation of graphene at undesired locations as well as at locations to be presented in the present invention, Can be understood as neglecting the nucleation of graphene generated in the graphene.
In one embodiment of the present invention, the present invention is directed to a method for producing an uncatalyzed substrate growth graphene, wherein the carbon-
The concentration of the carbon-containing gas is set to be high in a specific region of the substrate layer,
Grown to a graphene in a specific region of the substrate layer; The method comprising the steps of: Of course, in one embodiment of the present invention, the starting point of graphene growth may be nucleation of graphene at undesired locations as well as at locations to be presented in the present invention, Can be understood as neglecting the nucleation of graphene generated in the graphene.
In one embodiment of the present invention, the present invention relates to a method for the production of an uncatalyzed substrate growth graphene, wherein the carbon-containing gas supply comprises a concentration distribution of the carbon-containing gas in the substrate layer, Growing graphene in a direction parallel to the surface of the substrate as the concentration distribution is made non-uniform; The method comprising the steps of: Of course, in one embodiment of the present invention, the starting point of graphene growth may be nucleation of graphene at undesired locations as well as at locations to be presented in the present invention, Can be understood as neglecting the nucleation of graphene generated in the graphene.
In one embodiment of the present invention,
a. Positioning a substrate having a substrate layer thereon, and
b. Supplying a carbon-containing gas and performing plasma-enhanced chemical vapor deposition (PECVD), and
c. Growing graphene on the substrate layer in the absence of a catalyst layer; The method comprising the steps of:
In one embodiment of the present invention, the present invention further comprises cooling the graphene grown on the substrate layer; The method comprising the steps of:
In one embodiment of the present invention, the present invention comprises graphene obtained by a process for the production of an uncatalyzed substrate growth graphene.
In one embodiment of the present invention, the present invention comprises a substrate with a substrate layer and a graphene formed by the method of making the non-catalyst substrate growth graphene.
In one embodiment of the present invention, the present invention comprises a method of manufacturing an electronic component, characterized in that it comprises a method of manufacturing an uncatalyzed substrate growth graphene.
In one embodiment of the present invention, the present invention comprises an electronic component comprising graphene obtained by the process for producing a non-catalytic substrate growth graphene.
'' __
'' ___
Here, "to be described" means "to be enumerated or described and described as it is with the contents and features of the object or process".
The present invention has been described as an upper group, a group, a range of a group, a lower range of a group, and an inclusion range of a group.
Advantages and features of the present invention and methods for accomplishing the same will become apparent with reference to the embodiments described in detail in the foregoing. However, the present invention is not limited to the embodiments described in detail, but may be embodied in various forms.
In one embodiment of the present invention, generally known methods, generally known mathematical formulas, generally known laws, generally known descriptions, generally known sequences and generally known techniques, The present invention can be applied to an embodiment of the present invention which is widely disclosed without relying on the use of the present invention.
In one embodiment of the present invention, methods, orders, and techniques that are known in the art, such as those specifically known to those skilled in the art, are not intended to be applied to the embodiments of the present invention.
Those skilled in the art will readily appreciate that a person skilled in the art will be able to carry out the invention without departing from the scope of the present invention, It will be appreciated that the invention is feasible.
The terms and expressions which have been employed herein are used as terms of the detailed description of the invention but are not intended to be limiting and are not intended to limit the terms or expressions of the described or illustrated features. However, various modifications are possible within the scope of the present invention. It is, therefore, to be understood that the exemplary embodiments and optional features, as well as modifications and variations of the concepts described herein, may be resorted to by the prior art and the like, even though the invention has been described by some preferred embodiments, Variations may be considered within the scope of the invention as defined by the appended claims.
In one embodiment of the present invention, the specific embodiments provided are illustrative of useful embodiments of the present invention, and those of ordinary skill in the art should understand that changes may be made to the elements, As will be appreciated by those skilled in the art.
Those skilled in the art will appreciate that in one embodiment of the invention particular embodiments of the invention may be used including various optional configurations and methods and steps.
The specific nomenclature of the components described or illustrated herein may be resorted to as an example, insofar as those of ordinary skill in the art to which the invention pertains may specifically refer to the specific names of the same components. Accordingly, the specific names of the components described or illustrated herein should be understood based on the overall description of the invention as set forth.
In one embodiment of the present invention, it is contemplated that combinations of the described or described groups of the present invention may be used to practice the present invention, if not otherwise stated.
In one embodiment of the present invention, combinations of the groups described or described that may be included in a higher group of the present invention may be used within a higher group of the present invention, unless otherwise stated.
In an embodiment of the present invention, individual values that may be included in the scope of the group described or described above as well as when the scope of the group described or described is given in detail may be used in the scope of the above described or described group.
In an embodiment of the present invention, combinations of groups that can be included in the scope of the groups described or described above, as well as when the scope of the groups described or described is given in detail, may be used in the scope of the groups described or described above .
In an embodiment of the present invention, when a range of the described or described group is given in detail, a group which can be included in the range of the above described or described group can be used in the range of the above described or described group.
In one embodiment of the present invention, equivalently known components or variants of the components described or illustrated can be used to practice the invention without intending to be mentioned otherwise.
In one embodiment of the present invention, the contents of the present invention have been described at the level of those skilled in the art.
In one embodiment of the invention, the description set forth in the context of groups, ranges of groups, sub-ranges of groups, and ranges of groups can be realized within the scope of the description of a possible higher group of the invention.
Those skilled in the art will appreciate that the various ways of practicing the invention may be employed in the practice of the invention without undue experimentation.
Further, those skilled in the art will appreciate that those skilled in the art can make and use the embodiments of the present invention in the context of the present invention, which is fully capable of describing the group, the scope of the group, the sub-scope of the group, You can see that it can be.
While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, the invention is not limited to the disclosed exemplary embodiments. It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit and scope of the invention.
It is also to be understood that the present invention which is properly illustrated schematically is merely illustrative and that those skilled in the art will appreciate that various modifications and equivalent embodiments are possible without departing from the scope of the present invention . Accordingly, the true scope of the present invention should be determined by the technical idea of the appended claims.
In one embodiment of the present invention, methods known equivalently to the described methods may be used in an embodiment of the present invention without intending to do so. .............
100: substrate with a substrate layer
300: Carbon-containing gas
500: Grain Pins
1001: Graphene device
1002: Graphene
1003: a substrate provided with a substrate layer
2000: substrate
2100: substrate layer
2500: gas spout
2600: Carbon-containing gas moving direction
Claims (45)
b. Supplying a carbon-containing gas and performing plasma-enhanced chemical vapor deposition (PECVD)
c. In a heteroepitaxial growth type of van der Waals type nucleated on the surface of the substrate layer, adsorbing, diffusing, and the like of hydrocarbon radicals, Including growing graphene on a substrate layer; of
Method for manufacturing graphene growth of non-catalytic substrate characterized
b. Supplying a carbon-containing gas and performing plasma-enhanced chemical vapor deposition (PECVD)
c. In the growth type of van der Waals type which is generated nuclei on the surface of the substrate layer by adsorbing, diffusing and the hydrocarbon radicals, graphene is deposited on the substrate layer without the catalyst layer Including growing; of
Method for manufacturing graphene growth of non-catalytic substrate characterized
The carbon-containing gas supply
The concentration distribution of the carbon-containing gas in the substrate layer is made non-uniform,
Controlling the direction of growth of graphene; of
Method for manufacturing graphene growth of non-catalytic substrate characterized
The carbon-containing gas supply
The concentration of the carbon-containing gas is set to be high in a specific region of the substrate layer,
Grown to a graphene in a specific region of the substrate layer; of
Method for manufacturing graphene growth of non-catalytic substrate characterized
The carbon-containing gas supply may cause grains to grow in a direction parallel to the surface of the substrate, as the concentration distribution of the carbon-containing gas in the direction parallel to the surface of the substrate among the concentration distribution of the carbon- To do; of
Method for manufacturing graphene growth of non-catalytic substrate characterized
Further comprising cooling the graphene grown on the substrate layer; of
Method for manufacturing graphene growth of non-catalytic substrate characterized
b. Loading the substrate into a PECVD chamber and supplying a carbon-containing gas to form an uncatalyzed substrate growth graphene by PECVD; , ≪ / RTI &
c. The substrate being sequentially loaded into the deposition chamber and the PECVD chamber using a load-locked chamber; of
Method for manufacturing graphene growth of non-catalytic substrate characterized
b. Selectively etching the substrate layer formed on the substrate by sequentially loading the substrate into chambers for performing selective etching; And
c. Loading the substrate into a PECVD chamber and supplying a carbon-containing gas to form an uncatalyzed substrate growth graphene by PECVD; , ≪ / RTI &
d. The substrate being sequentially loaded using a load-locked chamber; of
Method for manufacturing graphene growth of non-catalytic substrate characterized
b. Loading the substrate into a CMP chamber and performing a CMP process on the substrate layer formed on the substrate; And
c. Loading the substrate into a PECVD chamber and supplying a carbon-containing gas to form an uncatalyzed substrate growth graphene by PECVD; , ≪ / RTI &
d. The substrate being sequentially loaded using a load-locked chamber; of
Method for manufacturing graphene growth of non-catalytic substrate characterized
b. Loading the substrate into a CMP chamber and performing a CMP process on the substrate layer formed on the substrate; And
c. Selectively etching the substrate layer formed on the substrate by sequentially loading the substrate into chambers for performing selective etching; And
d. Loading the substrate into a PECVD chamber and supplying a carbon-containing gas to form an uncatalyzed substrate growth graphene by PECVD; , ≪ / RTI &
e. The substrate being sequentially loaded using a load-locked chamber; of
Method for manufacturing graphene growth of non-catalytic substrate characterized
b. Uniformly configuring the concentration distribution of the carbon-containing gas in the substrate layer, and
c. Performing PECVD, and
d. In the heteroepitaxial growth type of Van der Waals type which is generated nuclei on the surface of the substrate layer by adsorbing, diffusing and the hydrocarbon radicals, And growing graphene on the substrate layer; of
Method for manufacturing graphene growth of non-catalytic substrate characterized
b. Increasing the concentration of the carbon-containing gas in a specific region of the substrate layer in the substrate layer, and
c. Performing PECVD, and
d. A heteroepitaxial growth type of Van der Waals type nucleated on the surface of a substrate layer and adsorbing and diffusing hydrocarbon radicals on the surface of the substrate layer, To graphene, and
e. The growth direction of graphene is such that graphene grows in a parallel direction in a specific region of the substrate layer, and
f. Finally including the step of forming graphene; of
Method for manufacturing graphene growth of non-catalytic substrate characterized
b. Uniformly configuring the concentration distribution of the carbon-containing gas in the substrate layer, and
c. Performing PECVD, and
d. In the growth type of van der Waals type which is generated nuclei on the surface of the substrate layer by adsorbing, diffusing and the hydrocarbon radicals, graphene is deposited on the substrate layer without the catalyst layer Including the step of growing; of
Method for manufacturing graphene growth of non-catalytic substrate characterized
b. Increasing the concentration of the carbon-containing gas in a specific region of the substrate layer in the substrate layer, and
c. Performing PECVD, and
d. Growing into a graphene in a specific region of the substrate layer with a growth type of Van der Waals type nucleated on the surface of the substrate layer, adsorbing, diffusing and hydrocarbyl radicals , And
e. The growth direction of graphene is such that graphene grows in a parallel direction in a specific region of the substrate layer, and
f. Finally including the step of forming graphene; of
Method for manufacturing graphene growth of non-catalytic substrate characterized
Preparing surface graphenes growing in a second direction parallel to the surface from the graphene and in direct contact with the substrate layer by the method of manufacturing the noncatalyst substrate growth graphene according to claim 3; of
Method for manufacturing graphene growth of non-catalytic substrate characterized
Preparing surface graphenes growing in a second direction parallel to the surface from the graphene and in direct contact with the substrate layer by the method of manufacturing the noncatalyst substrate growth graphene according to claim 4; of
Method for manufacturing graphene growth of non-catalytic substrate characterized
Preparing surface graphenes growing in a second direction parallel to the surface from the graphene and in direct contact with the substrate layer by the method of manufacturing the noncatalyst substrate growth graphene according to claim 5; of
Method for manufacturing graphene growth of non-catalytic substrate characterized
Further comprising cooling said graphene,
Further comprising cooling said planar graphene; of
Method for manufacturing graphene growth of non-catalytic substrate characterized
The non-catalyst substrate growth graphene directly contacts the surface of the substrate layer,
The crystal grain size in the first direction parallel to the surface of the non-catalyst substrate growth graphene is larger than the crystal grain size in any other direction parallel to the surface of the non-catalyst substrate growth graphene,
The grains in the first direction of the non-catalyst substrate growth grains are larger than the grains in the direction perpendicular to the surface of the grains; of
Non-catalytic substrate growth characterized by graphene
The noncatalytic substrate growth graphene directly contacts the surface of the substrate layer,
Wherein said non-catalytic substrate growth graphene has a grain boundary along a first direction parallel to said surface,
The corresponding noncatalytic substrate growth graphene having a grain boundary along a second direction parallel to the surface; of
Non-catalytic substrate growth characterized by graphene
The first direction and the second direction being orthogonal; of
Non-catalytic substrate growth characterized by graphene
The noncatalytic substrate growth graphene directly contacts the surface of the substrate layer,
The non-catalytic substrate-grown graphene has a plurality of grain boundaries along a first direction parallel to the surface,
The corresponding noncatalytic substrate growth graphene having a plurality of crystal grain boundaries along a second direction parallel to the surface; of
Non-catalytic substrate growth characterized by graphene
The first direction and the second direction being orthogonal; of
Non-catalytic substrate growth characterized by graphene
b. Supplying a carbon-containing gas and performing plasma-enhanced chemical vapor deposition (PECVD)
c. In a heteroepitaxial growth type of van der Waals type nucleated on the surface of the substrate layer, adsorbing, diffusing, and the like of hydrocarbon radicals, Including growing graphene on a substrate layer; of
Method for manufacturing graphene growth of non-catalytic substrate characterized
b. Supplying a carbon-containing gas and performing plasma-enhanced chemical vapor deposition (PECVD)
c. In the growth type of van der Waals type which is generated nuclei on the surface of the substrate layer by adsorbing, diffusing and the hydrocarbon radicals, graphene is deposited on the substrate layer without the catalyst layer Including growing; of
Method for manufacturing graphene growth of non-catalytic substrate characterized
b. Supplying a carbon-containing gas and performing plasma-enhanced chemical vapor deposition (PECVD)
c. A heteroepitaxial growth type of van der Waals type nucleated on the surface of a substrate layer and adsorbing and diffusing compound radicals containing carbon and a catalyst layer Including growing graphene on a substrate layer in the absence of the substrate; of
Method for manufacturing graphene growth of non-catalytic substrate characterized
b. Supplying a carbon-containing gas and performing plasma-enhanced chemical vapor deposition (PECVD)
c. In a growing type of van der Waals type that occurs as a nucleus on the surface of a substrate layer, adsorbing, diffusing, and compound radicals containing carbon are formed on the substrate layer in the absence of a catalyst layer Including growing graphene; of
Method for manufacturing graphene growth of non-catalytic substrate characterized
b. Supplying a carbon-containing gas and performing plasma-enhanced chemical vapor deposition (PECVD)
c. In the heteroepitaxial growth type of Van der Waals type nucleated on the surface of the substrate layer and adsorbing, diffusing and decomposing decomposition products of carbon-containing compounds, Including growing graphene on a substrate layer in the state of < RTI ID = 0.0 > of
Method for manufacturing graphene growth of non-catalytic substrate characterized
b. Supplying a carbon-containing gas and performing plasma-enhanced chemical vapor deposition (PECVD)
c. In the growth type of Van der Waals type which is nucleated on the surface of the substrate layer, adsorption, diffuse and decomposition of the decomposition product of the carbon-containing compound, graphene ; ≪ / RTI > of
Method for manufacturing graphene growth of non-catalytic substrate characterized
Performing Plasma-Enhanced Chemical Vapor Deposition (PECVD), and
In the heteroepitaxial growth type of Van der Waals type which is generated nuclei on the surface of the substrate layer by adsorbing, diffusing and the hydrocarbon radicals, And growing graphene on the substrate layer; of
Method for manufacturing graphene growth of non-catalytic substrate characterized
Performing Plasma-Enhanced Chemical Vapor Deposition (PECVD), and
In the growth type of van der Waals type which is generated nuclei on the surface of the substrate layer by adsorbing, diffusing and the hydrocarbon radicals, graphene is deposited on the substrate layer without the catalyst layer Including the step of growing; of
Method for manufacturing graphene growth of non-catalytic substrate characterized
The carbon-containing gas supply
The concentration distribution of the carbon-containing gas in the substrate layer is made non-uniform,
Controlling the direction of growth of graphene; of
Method for manufacturing graphene growth of non-catalytic substrate characterized
The carbon-containing gas supply
The concentration of the carbon-containing gas is set to be high in a specific region of the substrate layer,
Grown to a graphene in a specific region of the substrate layer; of
Method for manufacturing graphene growth of non-catalytic substrate characterized
The carbon-containing gas supply may cause grains to grow in a direction parallel to the surface of the substrate, as the concentration distribution of the carbon-containing gas in the direction parallel to the surface of the substrate among the concentration distribution of the carbon- To do; of
Method for manufacturing graphene growth of non-catalytic substrate characterized
Further comprising cooling the graphene grown on the substrate layer; of
Method for manufacturing graphene growth of non-catalytic substrate characterized
b. Supplying a carbon-containing gas and performing plasma-enhanced chemical vapor deposition (PECVD), and
c. Growing graphene on the substrate layer in the absence of a catalyst layer; of
Method for manufacturing graphene growth of non-catalytic substrate characterized
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