KR20160076366A - Apparatus of cleaning wafer polished by chemical mechanical polishing process - Google Patents

Apparatus of cleaning wafer polished by chemical mechanical polishing process Download PDF

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Publication number
KR20160076366A
KR20160076366A KR1020140186480A KR20140186480A KR20160076366A KR 20160076366 A KR20160076366 A KR 20160076366A KR 1020140186480 A KR1020140186480 A KR 1020140186480A KR 20140186480 A KR20140186480 A KR 20140186480A KR 20160076366 A KR20160076366 A KR 20160076366A
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KR
South Korea
Prior art keywords
cleaning
wafer
module
modules
transfer arm
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KR1020140186480A
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Korean (ko)
Inventor
이승은
Original Assignee
주식회사 케이씨텍
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Priority to KR1020140186480A priority Critical patent/KR20160076366A/en
Publication of KR20160076366A publication Critical patent/KR20160076366A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043—Making grooves, e.g. cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations

Abstract

The present invention relates to a wafer washing apparatus, which comprises: a plurality of transfer arms which moves wafers along a predetermined path in a state of being held by a gripping unit; a plurality of washing modules which washes the wafers transferred by the transfer arms; and a plurality of waiting modules which waits while the wafers are washed in the washing modules after the transfer arms supply the wafers to the washing modules. The provided wafer washing apparatus is able to: prevent the transfer arms from being polluted by foreign matters or fluid for cleaning during a washing process as the transfer arms are positioned in the waiting modules without being positioned in the washing modules after the wafers are supplied to the washing modules by the transfer arms; and prevent the washing efficiency of the wafers from being lowered by a chemical reaction generated by mixing different kinds of cleaning fluid by the transfer arms through the washing process of the transfer arms for supporting the wafers by being in contact with the wafers after the wafers are supplied to the washing modules by the transfer arms.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a cleaning apparatus for a wafer,

The present invention relates to a wafer cleaning apparatus, and more particularly, to a wafer cleaning apparatus in which a transfer arm for transferring a wafer during a multistage cleaning process of a wafer is maintained in a state in which the cleaning liquid used in the cleaning module is not contaminated, The present invention relates to a cleaning apparatus for a wafer which prevents the cleaning efficiency from being lowered by a chemical reaction of a cleaning liquid even if the wafer is cleaned.

The chemical mechanical polishing (CMP) apparatus is a device for performing a wide-area planarization that removes a height difference between a cell region and a peripheral circuit region due to unevenness of a wafer surface generated by repeatedly performing masking, etching, To improve the surface roughness of the wafer due to contact / wiring film separation and highly integrated elements, and the like.

1, the chemical mechanical polishing apparatus X1 supplies the circular substrate W to the carrier head CH with the supply arm H so that the wafer mounted on the carrier head CH is transferred to the polishing table P The mechanical polishing process is performed by friction, and at the same time, the chemical polishing process is performed by the slurry supplied to the polishing surface plate P.

Since the chemical mechanical polishing process is terminated with many foreign substances adhering to the polishing surface of the wafer W, a cleaning process for cleaning the polishing surface of the wafer W is performed in multiple steps. The wafer W having been subjected to the CMP process is placed in the transfer arm 30 by the handler H to remove foreign substances adhering to the surface of the wafer W. When the transfer arm 30 reaches the predetermined path Rx, C2, and C3 of the wafer cleaning apparatus 1 while the wafer W is moved (moved) along the wafer W (Fig.

The cleaning mechanism of each of the cleaning modules C1, C2 and C3 is accommodated in the casing 10 as shown in Figs. 2A and 2B so that the wafer W is cleaned in the casing 10 of the cleaning module And flows into the spaces E1, E2, and E3, the cleaning process is performed while the cleaning liquid is sprayed from the cleaning mechanisms 16 and 18. [ Although the figure shows a nozzle for spraying a cleaning liquid, a rinse water or the like, various cleaning mechanisms such as a brush cleaning and an IPA rinse cleaning can be accommodated in the casing 10. [

However, the cleaning liquids used in the respective cleaning modules C1, C2, and C3 may be different from each other. For example, even if the wafer cleaning process in the first cleaning module C1 and the second cleaning module C2 performs the contact cleaning of the surface of the wafer while rotating the cleaning brush, the cleaning method is the same, (HF) and ammonia water (NH4OH), respectively. At this time, when the cleaning liquid used in the first cleaning module C1 is acid and the cleaning liquid used in the second cleaning module C2 is a base, when these cleaning liquids meet each other, salt is generated There is a problem that contamination due to by-products occurs during the wafer cleaning process.

The transfer arm 30 for transferring the wafer W does not go in and out of only one cleaning module but moves into and out of two or more cleaning modules for transferring the wafer W. Therefore, There is a problem that the cleaning liquid used in the different cleaning modules is mixed with each other by the cleaning liquid so that salt is generated at the portion where the wafer W comes into contact with the transfer arm 30 when the wafer W is gripped by the transfer arm 30 to contaminate the wafer.

Disclosure of Invention Technical Problem [8] The present invention has been made in view of the above-mentioned technical background, and it is an object of the present invention to provide a cleaning module for cleaning a wafer, The purpose.

Accordingly, it is an object of the present invention to prevent chemical reactions from occurring by mixing cleaning liquids having different properties during a cleaning process of a wafer, thereby preventing inhibition of cleaning of the wafer.

According to an aspect of the present invention, there is provided a wafer transfer apparatus comprising: a transfer arm that moves along a predetermined path while holding a wafer on a grip; A plurality of cleaning modules for cleaning the wafer transferred by the transfer arm; A waiting module waiting for the wafer to be cleaned in the cleaning module after the transfer arm supplies the wafer to the cleaning module; The wafer cleaning apparatus according to claim 1,

That is, after the wafer is supplied to the cleaning module by the transfer arm, the transfer arm is not located in the cleaning module but is located in the standby module, thereby preventing the transfer arm from being contaminated by the foreign substance or the cleaning liquid during the cleaning process.

To this end, the atmospheric module is preferably formed in the form of a chamber isolated from the inside of the cleaning chamber.

Particularly, the waiting module is provided with a cleaning device for cleaning the transfer arm. After the wafer is supplied to the cleaning module by the transfer arm, the transfer module carries out a cleaning process of the transfer arm that contacts and supports the wafer. The cleaning liquid or the like on the wafer does not affect the transferring process of the wafer to be transferred next so that the transfer arm is prevented from being contaminated by the foreign substance or the cleaning liquid, To the cleaning module.

This makes it possible to prevent the transfer arm from being contaminated by foreign matter adhering to a less cleaned wafer and to prevent secondary contamination of the next transferred wafer, It is possible to prevent the cleaning efficiency of the wafer from being lowered by the reaction.

The waiting module is provided with a cleaning nozzle for spraying a cleaning liquid toward the region where the wafer contacts the transfer arm. Even if the transfer arm is contaminated by the wafer, the contaminated portion is cleanly cleaned immediately so that the transfer arm is always clean So that the wafer can be gripped.

At this time, the standby module may be disposed adjacent to the cleaning module. Alternatively, the standby module may be configured to share a casing wall surface of the cleaning module.

The standby module is disposed between the cleaning modules, and can perform the cleaning process of the transfer arm from the standby module immediately during a standby time after the wafer is supplied to the cleaning module.

At this time, the plurality of transfer arms may be formed to reciprocate at the same time, or may be configured to move independently of each other.

The cleaning module is provided with a penetration portion through which the transfer arm moves, and a shutter which selectively opens and closes the penetration portion. The shutter is opened only when the transfer arm enters the cleaning module, After the wafer is returned to the inside of the cleaning module and then returned, the shutter closes the penetration portion, thereby minimizing the discharge of the cleaning liquid and the like to the outside during the cleaning process in the cleaning module.

The term " isolation " of the atmospheric module as described in the present specification and claims refers to being interrupted from the cleansing module, and is not limited to the state of being sealed with the outside due to the shape of the casing itself forming the atmospheric module. Therefore, even if the hole through which the transfer arm is passed is opened in the standby module, if the cleaning module is blocked by the shutter during the cleaning process, the standby module corresponds to the closed state. Further, even if an inflow hole is formed on the upper side of the cleaning chamber, it is defined as a state of being 'isolated' if it is blocked in the horizontal direction.

The term " grip " in this specification and claims is defined not to be limited to the " gripping shape ", but to be used in a broad sense including both retained and mounted states. Therefore, when the term 'phage' described in the present specification and claims is used in the meaning of 'operation', it means a process to be held or a process to be mounted.

According to the present invention, after the wafer is supplied to the cleaning module by the transfer arm, the transfer arm is not located in the cleaning module and is located in the standby module isolated from the cleaning module. Therefore, during the cleaning process, It is possible to obtain an effect of preventing contamination.

Above all, in the present invention, the cleaning module for cleaning the transfer arm is provided in the waiting module, and after the wafer is supplied to the cleaning module by the transfer arm, the wafer is subjected to the cleaning process of the transfer arm for contact- As the transfer arm transfers the wafer to any one of the cleaning modules, the cleaning liquid or the like accumulated on the wafer does not affect the transferring process of the next wafer to be transferred, thereby preventing the transfer arm from being contaminated by the foreign substance or the cleaning liquid, The wafer can be transferred to the cleaning module in a clean state.

This makes it possible to prevent the transfer arm from being contaminated by foreign matter adhering to a less cleaned wafer and to prevent secondary contamination of the next transferred wafer, It is possible to prevent the cleaning efficiency of the wafer from being lowered by the reaction.

1 is a plan view showing a chamber arrangement structure of a conventional wafer cleaning apparatus adjacent to a chemical mechanical polishing apparatus,
Figure 2a is a perspective view of the cleaning module of Figure 1,
FIG. 2B is a sectional view of FIG. 2A,
3 is a plan view showing a configuration of a wafer cleaning apparatus according to an embodiment of the present invention,
FIG. 4 is a plan view showing a state in which the transfer arm of the wafer cleaning apparatus of FIG. 3 is placed in the standby module,
5 is a perspective view showing the configuration of the transfer arm of the wafer cleaning apparatus,
FIG. 6 is a longitudinal sectional view of the wafer cleaning apparatus of FIG. 3,
7A and 7B are diagrams for explaining the operation principle of the wafer cleaning apparatus of FIG. 3,
8 is a cross-sectional view showing the cleaning process of the transfer arm in the standby module.

Hereinafter, the present invention will be described in detail with reference to the accompanying drawings. In the following description, well-known functions or constructions are not described in detail to avoid obscuring the subject matter of the present invention.

As shown in the drawings, the wafer cleaning apparatus 100 according to an embodiment of the present invention includes a plurality of cleaning modules C1, C2, C3 disposed inside and disposed in the longitudinal direction, A wafer transfer mechanism 120 for transferring the wafers W from the mechanical polishing apparatus X1 to the plurality of cleaning modules C1, C2 and C3 and the cleaning units C1, C2 and C3, (Z1, Z2, Z3) for forming a space in which the transfer arm (122), which is a holding portion of the wafer transfer mechanism (120), can stand by during the cleaning process.

The cleaning modules C1, C2 and C3 are provided with cleaning chambers E1, E2 and E3 which are separated from the outside air by the casing 110 and are provided with a cleaning device for cleaning the wafer W in the casing 110, (130). The cleaning equipment provided inside the casing 110 of the cleaning modules C1, C2 and C3 includes a mechanism for spin-spinning the wafer W and a mechanism for spin- And a mechanism for cleaning the surface of the wafer W by a cleaning brush rotating the wafer W, may be provided.

The casing 110 of the cleaning modules C1, C2 and C3 is provided with penetration portions 110i and 110e through which the wafer W transferred by the transfer arm 122 of the transfer mechanism 120 enters and exits, (110i, 110e) are opened or closed by the shutters (112, 114). Here, the shutters 112 and 114 provided for the respective casings 110 may be formed in two or more openings so as to open and close only a part of the penetration portions 110i and 110e, and the entire penetration portions 110i, And 110e.

An opening 111 is formed on the upper side of the casing 110 forming the cleaning modules C1, C2 and C3 so that a downward flow field 20v generated by the flow generator 20 is formed inside the casing 110 . This minimizes the flooding of the cleaning liquid or foreign matter into the surrounding air during the cleaning process performed in the cleaning modules (C1, C2, C3).

5, the wafer transfer mechanism 120 includes a transfer arm 122 formed to be capable of reciprocating movement 120d by a driving unit 125 along a predetermined path P12 formed on a frame FR, Respectively. The transfer arm 122 can be moved (120d) in a state in which the support surface 120a on which the edge of the wafer is placed is curved so that the wafer W can be stably contacted.

The transfer arm 122 may be reciprocally moved simultaneously by a lead screw method by the driving unit 125 or may be individually reciprocated by current control applied to the coil by a linear motor method. That is, the connection portion 124 formed between the transfer arm 122 and the driving portion 125 is moved along the path P12 determined by various driving modes.

Although the figure illustrates a configuration in which the transfer arm 122 horizontally transfers the wafer, the transfer arm 122 may hold and transfer the wafer in a vertical state. In this case, the inlet 110i and the outlet 110e of the cleaning modules C1, C2, and C3 through which the transfer arm 122 enters and exits are formed in the form of a slit erected vertically.

The standby modules Z1, Z2 and Z3 form a space for accommodating the transfer arm 122 after the transfer arm 122 transfers the wafer W to the cleaning modules C1, C2 and C3. Since the transfer arm 122 supplies one wafer W to each of the cleaning modules C1, C2 and C3, the transfer arm 122 is formed by the number of the cleaning modules C1, C2 and C3 .

Accordingly, the standby modules Z1, Z2, and Z3 may accommodate a plurality of transfer arms 122 within the casing of one standby module, but according to the preferred embodiment of the present invention, the standby modules Z1, Z2, Z3 are formed in the same number as the cleaning modules C1, C2, C3 to accommodate the transfer arms 122 one by one. The standby modules Z1, Z2, and Z3 are disposed adjacent to the cleaning modules C1, C2, and C3. After the transfer arm 122 transfers the wafer W, the standby modules Z1, Z2, Can be shortened.

At this time, the casing 149 of the standby modules Z1, Z2 and Z3 is isolated from the cleaning chambers E1, E2 and E3 during the cleaning process. That is, during the cleaning process, the shutters 112 and 114 of the cleaning modules C1, C2, and C3 keep the through portions 110i and 110e closed, so that the standby modules Z1, Z2, The waiting transfer arm 122 becomes isolated from the cleaning chambers E1, E2 and E3 which are the internal spaces of the cleaning modules C1, C2 and C3. Therefore, the cleaning liquid generated during the cleaning process in the cleaning chambers E1, E2, and E3 does not flow into the interior of the standby modules Z1, Z2, and Z3.

Although not shown in the drawings, in order to more reliably prevent the cleaning liquid or the like from being scattered and adhered to the standby transfer arm 122 in the standby modules Z1, Z2, and Z3, A shutter may be mounted on the holes 130i and 130e of the Z1, Z2, and Z3 to be opened and closed.

A nozzle 140 for injecting at least one of a cleaning liquid and a rinsing liquid to the transfer arm 122 is installed inside the standby modules Z1, Z2, and Z3. The transfer arm 122 transfers the wafer W to the cleaning modules C1, C2 and C3 and returns to the standby modules Z1, Z2 and Z3 in an empty state in which nothing is held, The rim of the edge CM of the wafer W is cleaned by the rinsing liquid or the high-pressure spraying liquid from the rinsing bath 140. [

Therefore, during the cleaning process of the wafer W in the cleaning modules C1, C2, and C3, the cleaning process of the transfer arm 122 is also performed in the standby modules Z1, Z2, and Z3 at the same time, Even if the wafer W enters the cleaning modules C1, C2, and C3 to grasp the wafer W that has been cleaned, the wafer W is transferred from the previously held wafer W to the transfer arm 122 There is no problem that the cleaning liquid is mixed through the transfer arm 122 because the wafer W is in a state in which no foreign matter or cleaning liquid remains.

In other words, even if cleaning fluids (for example, fluorine and ammonia), which are acid and base, are used in the adjacent cleaning modules C1, C2 and C3, there is no fear that they are mixed with each other in the transfer arm 122, The problem of contamination of the wafer by the salt produced can be solved. In addition, an advantage of not causing secondary contamination on the next wafer due to foreign matter transferred from the wafer before cleaning in the process of holding the wafer after the cleaning process is also obtained.

Hereinafter, the operation principle of the wafer cleaning apparatus 100 of the present invention constructed as described above will be described.

Step 1 : As shown in FIGS. 3 and 7A, the transfer arm 122 of the wafer transfer mechanism 120 is held by the driving unit 125 of the wafer transfer mechanism 120 in a state that the wafer W is gripped by the transfer arm 122 of the wafer transfer mechanism 120 The transfer arm 122 is transferred (120d) into each of the cleaning modules (C1, C2, C3). At this time, the shutters 112 and 114 of the cleaning modules C1, C2 and C3 are all kept open.

Step 2 : When the wafer W to be cleaned is located in the cleaning chambers E1, E2 and E3, the transfer arm 122 places the wafer W in the cleaning chambers E1, E2 and E3, And returns to the standby modules Z1, Z2, and Z3 as shown in FIG. 7B (120d ').

The perforations 110i and 110e of the cleaning modules C1, C2 and C3 are then closed by the shutters 112 and 114 so that the cleaning chambers E1, E2 and E3 and the standby modules Z1 and Z2 And Z3 are isolated from each other. Although not shown in the drawing, a shutter may be provided in the holes 130i and 130e of the standby modules Z1, Z2, and Z3 to close them.

Therefore, the cleaning process in the cleaning modules C1, C2, and C3 and the cleaning process in the standby modules Z1, Z2, and Z3 can be performed separately without affecting each other. The liquid droplets scattered to the periphery during the cleaning process are discharged through the lower discharge port by the downward flow field 20v at the upper side.

Next, the wafer W is cleaned by the cleaning device 130 installed in the cleaning modules C1, C2, and C3, and is transferred by the cleaning device 140 installed in the standby modules Z1, Z2, The arm 122 is cleaned. 8, a high-pressure cleaning liquid and a rinsing liquid 55 are directly sprayed from the lower cleaning nozzle 140D onto the support surface 120a of the transfer arm 122 on which the edge of the wafer is placed, 1, the foreign substance and the cleaning liquid which have been buried from the edge of the wafer W are completely removed.

On the other hand, in the upper cleaning nozzle 140U of the cleaning facility 140 of the standby modules Z1, Z2, and Z3, a solution having a large flow rate can be supplied to the transfer arm 122, A rinse solution such as pure water may be applied in spray form.

At this time, the solution 55 that is sprayed toward the contaminated area CM with which the wafer W comes in contact is selected so that no chemical reaction occurs with the cleaning liquids 551, 552, and 553 used in the adjacent cleaning module. For example, deionized water may be selected, and when the cleaning liquids 551, 552 and 553 used in adjacent cleaning modules are bases, the cleaning liquid 55 used in the standby module may also be a base.

The solution 55 is injected at a high pressure in an excited state by the megasonic exciter to exert a higher cleaning force on the contaminated region CM where the wafer W comes into contact with the contact portion 120a of the wafer, The cleaning effect of the foreign substance or the cleaning liquid used in the cleaning module can be completely removed.

Step 3 : When the cleaning process is completed, the shutters 112 and 114 of the cleaning modules C1, C2 and C3 are opened and the transfer arm 122 cleanly cleaned in the standby modules Z1, Z2 and Z3, (C1), (C2), and (C3), and transfers the wafer W to the next cleaning process or to the outside.

At this time, the transfer arm 122 located at the leftmost position on the basis of FIG. 4 is newly supplied with the wafer after the chemical mechanical polishing process is received and transferred to the first cleaning module C1, The wafer W on which the first cleaning process has been performed is gripped by the first cleaning module C1 and transferred to the second cleaning module C2 and the transfer arm located on the right side of the wafer W is held by the second cleaning module C2, (W) is gripped and transferred to the third cleaning module (C3). Although not shown in the drawing, the transfer arm located on the right side grasps the wafer W subjected to the third cleaning process in the third cleaning module C3 and discharges the wafer W to the outside.

The wafer cleaning apparatus 100 according to the present invention configured as described above is configured such that after the wafer W is supplied to the cleaning module by the transfer arm 122, the transfer arm 122 is rotated by the cleaning modules C1, C2, C3 C2, and C3) and foreign substances generated during the cleaning process and contaminated cleaning liquid droplets are deposited on the transfer module (C1, C2, C3) without being located in the cleaning module (Z1, Z2, Z3) It is possible to obtain an effect of preventing the dust particles 122 from being contaminated. Particularly, since the cleaning unit 140 for cleaning the transfer arm 122 is provided on the standby modules Z1, Z2, and Z3, the wafer W is transferred as the transfer arm 122 is cleaned in the air The foreign substances or the cleaning liquid left from the wafer do not remain when the wafer is gripped next so that the wafer W is secondarily contaminated via the transfer arm 122 or the wafer W is contaminated by the different cleaning modules C1, It is possible to obtain an advantageous effect that the cleaning efficiency of the wafer can be prevented from being lowered by producing by-products while the cleaning liquids 551, 552, and 553 are mixed.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, Modified, modified, or improved.

That is, in the above-described embodiment, the cleaning process of the wafers is performed stepwise in the three cleaning modules. However, according to another embodiment of the present invention, the cleaning process of the wafers is performed stepwise in two or four or more cleaning modules It will be apparent to those skilled in the art that the present invention is not limited thereto.

W: Wafer 100: Wafer cleaning device
110: casing 112:
114: penetration part 120: wafer transfer mechanism
122: transfer arm 130: cleaning mechanism
140: Arm cleaning device 149: Waiting module casing
C1, C2, C3: Cleaning module Z1, Z2, Z3: Waiting module

Claims (11)

A transfer arm that moves along a predetermined path while holding the wafer in the grip portion;
A plurality of cleaning modules for cleaning the wafer transferred by the transfer arm;
A waiting module waiting for the wafer to be cleaned in the cleaning module after the transfer arm supplies the wafer to the cleaning module;
The wafer cleaning apparatus comprising:
The method according to claim 1,
Wherein the at least one cleaning module is disposed adjacent to the cleaning module.
The method according to claim 1,
Wherein the at least one of the plurality of cleaning modules is disposed between the cleaning modules.
The method according to claim 1,
Wherein the plurality of transfer arms are formed and reciprocally moved at the same time.
The method according to claim 1,
Wherein the plurality of transfer arms are formed and move independently of each other.
The method according to claim 1,
Wherein the cleaning module includes a penetration portion through which the transfer arm moves, and a shutter that selectively opens and closes the penetration portion.
7. The method according to any one of claims 1 to 6,
Wherein the waiting module is provided with a cleaning device for cleaning the transfer arm.
8. The method of claim 7,
Wherein the waiting module is provided with a cleaning nozzle for spraying at least one of a cleaning solution and a rinsing solution toward an area where the wafer contacts the transfer arm.
9. The method of claim 8,
Wherein the solution injected by the cleaning nozzle does not chemically react with the cleaning solution used in the cleaning module adjacent to the atmospheric module.
9. The method of claim 8,
Wherein the cleaning nozzle is ejected in the form of a liquid excited by megasonic.
7. The method according to any one of claims 1 to 6,
Wherein the atmospheric module is formed in the form of a chamber isolated from the interior of the cleaning chamber.
KR1020140186480A 2014-12-22 2014-12-22 Apparatus of cleaning wafer polished by chemical mechanical polishing process KR20160076366A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109037101A (en) * 2018-07-13 2018-12-18 清华大学 Wafer processing
KR20200078911A (en) * 2018-12-24 2020-07-02 삼성전자주식회사 Cleaning device and method for driving cleaning device
CN117564917A (en) * 2024-01-15 2024-02-20 北京芯美达科技有限公司 Polycrystalline diamond polishing equipment

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109037101A (en) * 2018-07-13 2018-12-18 清华大学 Wafer processing
KR20200078911A (en) * 2018-12-24 2020-07-02 삼성전자주식회사 Cleaning device and method for driving cleaning device
CN117564917A (en) * 2024-01-15 2024-02-20 北京芯美达科技有限公司 Polycrystalline diamond polishing equipment
CN117564917B (en) * 2024-01-15 2024-04-02 北京芯美达科技有限公司 Polycrystalline diamond polishing equipment

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