KR20160037372A - substrate having inorganic-metal structure and fabricating method for the same - Google Patents
substrate having inorganic-metal structure and fabricating method for the same Download PDFInfo
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- KR20160037372A KR20160037372A KR1020140129535A KR20140129535A KR20160037372A KR 20160037372 A KR20160037372 A KR 20160037372A KR 1020140129535 A KR1020140129535 A KR 1020140129535A KR 20140129535 A KR20140129535 A KR 20140129535A KR 20160037372 A KR20160037372 A KR 20160037372A
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- substrate
- inorganic
- metal
- thin film
- metal structure
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 124
- 239000002184 metal Substances 0.000 title claims abstract description 124
- 239000000758 substrate Substances 0.000 title claims abstract description 108
- 238000000034 method Methods 0.000 title claims description 33
- 239000010409 thin film Substances 0.000 claims abstract description 76
- 238000001069 Raman spectroscopy Methods 0.000 claims abstract description 39
- 239000002105 nanoparticle Substances 0.000 claims abstract description 35
- 238000000151 deposition Methods 0.000 claims abstract description 24
- 239000011149 active material Substances 0.000 claims abstract description 23
- 230000008021 deposition Effects 0.000 claims abstract description 19
- 238000004519 manufacturing process Methods 0.000 claims abstract description 10
- 238000001771 vacuum deposition Methods 0.000 claims abstract description 10
- 229910010272 inorganic material Inorganic materials 0.000 claims description 38
- 239000011147 inorganic material Substances 0.000 claims description 38
- 229920000307 polymer substrate Polymers 0.000 claims description 21
- 238000005229 chemical vapour deposition Methods 0.000 claims description 20
- 238000001312 dry etching Methods 0.000 claims description 16
- 239000000126 substance Substances 0.000 claims description 15
- 238000004544 sputter deposition Methods 0.000 claims description 11
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 10
- 238000001704 evaporation Methods 0.000 claims description 10
- 230000008020 evaporation Effects 0.000 claims description 10
- 229910052802 copper Inorganic materials 0.000 claims description 9
- 239000007789 gas Substances 0.000 claims description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- 229920003050 poly-cycloolefin Polymers 0.000 claims description 6
- 238000004381 surface treatment Methods 0.000 claims description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 5
- 229910052769 Ytterbium Inorganic materials 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 229910052786 argon Inorganic materials 0.000 claims description 5
- 229910052788 barium Inorganic materials 0.000 claims description 5
- 229910052790 beryllium Inorganic materials 0.000 claims description 5
- 229910052793 cadmium Inorganic materials 0.000 claims description 5
- 229910052791 calcium Inorganic materials 0.000 claims description 5
- 229910052804 chromium Inorganic materials 0.000 claims description 5
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 5
- 239000001307 helium Substances 0.000 claims description 5
- 229910052734 helium Inorganic materials 0.000 claims description 5
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 5
- 239000001257 hydrogen Substances 0.000 claims description 5
- 229910052739 hydrogen Inorganic materials 0.000 claims description 5
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 5
- 229910052738 indium Inorganic materials 0.000 claims description 5
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 claims description 5
- 229910001635 magnesium fluoride Inorganic materials 0.000 claims description 5
- 229910052750 molybdenum Inorganic materials 0.000 claims description 5
- 238000005329 nanolithography Methods 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 150000004767 nitrides Chemical class 0.000 claims description 5
- 229910052701 rubidium Inorganic materials 0.000 claims description 5
- 229910052725 zinc Inorganic materials 0.000 claims description 5
- 229910052726 zirconium Inorganic materials 0.000 claims description 5
- 239000000956 alloy Substances 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 229910052763 palladium Inorganic materials 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 239000004417 polycarbonate Substances 0.000 claims description 4
- 229920000515 polycarbonate Polymers 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 229920012266 Poly(ether sulfone) PES Polymers 0.000 claims description 3
- 229920000058 polyacrylate Polymers 0.000 claims description 3
- 229920005749 polyurethane resin Polymers 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims 2
- 229910052718 tin Inorganic materials 0.000 claims 2
- 230000000694 effects Effects 0.000 abstract description 5
- RMVRSNDYEFQCLF-UHFFFAOYSA-N thiophenol Chemical compound SC1=CC=CC=C1 RMVRSNDYEFQCLF-UHFFFAOYSA-N 0.000 description 10
- 229920000139 polyethylene terephthalate Polymers 0.000 description 8
- 239000005020 polyethylene terephthalate Substances 0.000 description 8
- 230000008569 process Effects 0.000 description 5
- 238000001228 spectrum Methods 0.000 description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- -1 polyethylene terephthalate Polymers 0.000 description 4
- 238000001878 scanning electron micrograph Methods 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000002086 nanomaterial Substances 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 229910052500 inorganic mineral Inorganic materials 0.000 description 2
- 239000000543 intermediate Substances 0.000 description 2
- 239000011707 mineral Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000002808 molecular sieve Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 229910052706 scandium Inorganic materials 0.000 description 2
- URGAHOPLAPQHLN-UHFFFAOYSA-N sodium aluminosilicate Chemical compound [Na+].[Al+3].[O-][Si]([O-])=O.[O-][Si]([O-])=O URGAHOPLAPQHLN-UHFFFAOYSA-N 0.000 description 2
- 238000005477 sputtering target Methods 0.000 description 2
- 238000002198 surface plasmon resonance spectroscopy Methods 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 239000012491 analyte Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 108090000623 proteins and genes Proteins 0.000 description 1
- 102000004169 proteins and genes Human genes 0.000 description 1
- 238000004416 surface enhanced Raman spectroscopy Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/28—Investigating the spectrum
- G01J3/44—Raman spectrometry; Scattering spectrometry ; Fluorescence spectrometry
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/65—Raman scattering
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- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Laminated Bodies (AREA)
- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
Abstract
Description
The present invention relates to a substrate on which an inorganic-metal structure is formed and a method of manufacturing the same.
Raman scattering is an inelastic scattering in which the energy of incident light is changed. When the light is applied to a specific molecular sieve, light having slightly different wavelengths from the light irradiated by the inherent vibration transition of the molecular sieve is generated.
Raman spectroscopy using Raman scattering can be used to obtain signals even in the case of nonpolar molecules with a change in the induced polarization ratio of molecules, and virtually all organic molecules have a unique Raman shift. Further, it is not affected by interference by water molecules, and thus is more suitable for detection of biomolecules such as proteins and genes.
On the other hand, since the wavelength of the Raman emission spectrum indicates the chemical composition and the structural characteristic of the light absorbing molecule in the sample, analysis of the Raman signal can directly analyze the substance to be analyzed.
Thus, despite the advantage of being able to directly analyze the analyte, the intensity of the signal was so weak that it was difficult to commercialize it. However, since the surface enhanced Raman scattering has been reported by Fleishmann et al. In 1974, there have been increasing studies to amplify the signal intensity.
Surface enhancement Raman scattering is caused by surface plasmon resonance, which is excited by electromagnetic waves. Signals are significantly amplified by electromagnetic resonance.
Techniques for controlling the geometry of metal nanomaterials have been developed to induce surface plasmon resonance. Metal nanopatterns are formed on the substrate to induce a lot of hot spots.
When a hot spot is induced on a single substrate, the surface enhancement effect is increased by controlling the nanogap.
A technique for forming a structure on the surface of a substrate by applying a metal as a Raman active material on the surface of the substrate is a technique for inducing a conventional hot spot. However, such techniques tend to depend on the nanogap distance between the metals depending on the structure of the substrate surface. Also, the structure on the substrate surface can act as noise in the Raman signal because there is some information about the structure.
One example of such a technique is disclosed in Korean Patent Publication No. 10-2011-0097834. This patent relates to a substrate having a metal nano structure having a uniform density by forming a metal layer on a pattern (nanostructure) of an inverted triangle and a manufacturing method thereof.
As another technique, there is Korean Patent No. 10-0990580. This also relates to a technique of performing a metal coating after forming a specific pattern.
DISCLOSURE OF THE INVENTION The present invention has been made in order to overcome the limitations of the conventional technique of applying metal particles or metal thin films on a substrate having a specific pattern formed thereon and to facilitate the control of the nanogaps and to secure favorable characteristics of the substrate by using an inorganic material- .
Disclosure of the Invention An object of the present invention is to provide a substrate on which an inorganic-metal structure capable of easily controlling a nano-gap and introducing an inorganic material-containing thin film to secure adhesion and thermal stability, and a method for producing the same.
According to an aspect of the present invention, there is provided a substrate having a protruding structure having an upper protruding curved surface spaced apart from each other; Metal-containing nanoparticles formed on the protruding structure; A metal-containing thin film formed on the surface of the substrate; And an inorganic material-containing thin film formed between the metal-containing nanoparticles and the protuberant structure and between the metal-containing thin film and the surface of the substrate, wherein the metal-containing nanoparticle and the metal-containing thin film layer are formed on the substrate, Wherein the Raman active material is uniformly deposited on the metal thin film and the protruding structure at the same time but is concentratedly deposited on the protruding structure as the deposition progresses. The substrate on which the structure is formed can be provided.
Preferably, the substrate further comprises at least one or more inorganic material-containing thin films different in material from the inorganic material-containing thin film formed between the inorganic material-containing thin film and the substrate.
Preferably, the inorganic material is selected from the group consisting of Al, Ba, Be, Ca, Cr, Cu, Cd, Dy, Ga, Ge, Hf, In, Lu, Mg, Mo, Ni, Rb, Sc, , Oxides, nitrides, oxynitride, and magnesium fluoride of a metal selected from the group consisting of Ti, W, Zn, Zr, and Yb. A substrate on which an inorganic-metal structure is formed can be provided.
Preferably, the inorganic material-containing thin film is formed using any one of chemical vapor deposition (CVD), sputtering, and evaporation. have.
Preferably, the substrate is a polymer substrate, and the protruding structure is formed by surface-treating the polymer substrate.
Preferably, the surface treatment may be performed using any one of nanoimprinting, nanolithography, and dry etching.
Preferably, the dry etching is a plasma dry etching performed using at least one gas selected from the group consisting of argon, oxygen, hydrogen, helium, and nitrogen gas. .
Preferably, the Raman active material is selected from the group consisting of Au, Ag, Cu, Pt, and Pd, and an alloy thereof.
Preferably, the vacuum deposition is performed using one of chemical vapor deposition (CVD), sputtering, and evaporation. The substrate on which the inorganic-metal structure is formed may be provided.
Preferably, the spacing of the protruding structures and the size of the metal-containing nanoparticles are adjusted to adjust the spacing of the metal-containing nanoparticles, thereby providing a substrate on which the inorganic-metal structure is formed.
Preferably, the substrate is selected from the group consisting of Acrylic polymers, Polyethersulfone (PES), Polycycloolefin (PCO), Polyiourethane and Polycarbonate (PC) Metal substrate, and the substrate is a polymer substrate.
In addition, in the method of manufacturing a substrate on which the inorganic-metal structure is formed, surface-treating the substrate to form a protruding structure having an upper protruding curved surface spaced apart from each other; Forming an inorganic thin film on the substrate surface and the protruding structure; And simultaneously depositing a metal-containing nanoparticle on the upper protruding structure and a metal-containing thin film on the surface of the substrate by simultaneously vacuum depositing a Raman active material until a nanogap is formed between the adjacent metal-containing nanoparticles Wherein the Raman active material is uniformly deposited on the metal thin film and the protruding structure at an initial stage but is concentratedly deposited on the protruding structure as the deposition progresses. Can be provided.
Preferably, the method further comprises the step of forming at least one or more inorganic substance-containing thin films different in material from the inorganic substance-containing thin film before the inorganic substance-containing thin film is formed. .
Preferably, the inorganic material is selected from the group consisting of Al, Ba, Be, Ca, Cr, Cu, Cd, Dy, Ga, Ge, Hf, In, Lu, Mg, Mo, Ni, Rb, Sc, , Oxides, nitrides, oxynitride, and magnesium fluoride of a metal selected from the group consisting of Ti, W, Zn, Zr, and Yb. A method of manufacturing a substrate on which an inorganic-metal structure is formed.
Preferably, the inorganic material-containing thin film is formed using any one of chemical vapor deposition (CVD), sputtering, and evaporation. .
Preferably, the substrate is a polymer substrate, and the surface treatment is performed using any one of nanoimprinting, nanolithography, and dry etching.
Preferably, the dry etching is a plasma dry etching performed using at least one gas selected from the group consisting of argon, oxygen, hydrogen, helium, and nitrogen gas. A manufacturing method can be provided.
Preferably, the Raman active material is selected from the group consisting of Au, Ag, Cu, Pt, and Pd, and an alloy thereof.
Preferably, the vacuum deposition may be performed by any one of chemical vapor deposition (CVD), sputtering, and evaporation. .
Preferably, the nanogaps are controlled by controlling the distance between the protruding structures and the size of the metal-containing nanoparticles.
The substrate on which the inorganic-metal structure according to the present invention is formed can easily control the nanogap and has an effect of securing adhesion and thermal stability by introducing an inorganic material-containing thin film.
1 illustrates a substrate on which an inorganic-metal structure is formed according to an embodiment of the present invention.
2 is a view illustrating a substrate on which an inorganic-metal structure according to another embodiment of the present invention is formed.
3 is a view illustrating a process of manufacturing a substrate on which an inorganic-metal structure according to an embodiment of the present invention is formed.
4 is a SEM image of an inorganic material-containing thin film according to an embodiment of the present invention.
5 is a SEM image of a substrate on which an inorganic-metal structure is formed according to an embodiment of the present invention.
6 is a reflection spectrum of a substrate on which an inorganic-metal structure according to an embodiment of the present invention is formed.
7 is a view showing a spectrum of a Raman signal intensity of a substrate on which an inorganic-metal structure is formed according to an embodiment of the present invention.
BRIEF DESCRIPTION OF THE DRAWINGS The present invention is capable of various modifications and various embodiments, and specific embodiments are illustrated in the drawings and described in detail in the detailed description. It is to be understood, however, that the invention is not to be limited to the specific embodiments, but includes all modifications, equivalents, and alternatives falling within the spirit and scope of the invention.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.
Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. In order to facilitate a thorough understanding of the present invention, the same reference numerals are used for the same means regardless of the number of the drawings.
1 illustrates a substrate on which an inorganic-metal structure is formed according to an embodiment of the present invention.
1, a substrate on which an inorganic-metal structure according to an exemplary embodiment of the present invention is formed includes a
In an embodiment of the present invention, the
In the case of the
In one embodiment of the present invention, polyethylene terephthalate (PET) is used as the
The protruding
The protruding
The plasma etching may be performed using at least one gas selected from the group consisting of dry etching, argon, oxygen, hydrogen, helium, and nitrogen gas, but is not limited thereto.
The protruding
An inorganic material-containing
The inorganic material may be at least one selected from the group consisting of Al, Ba, Be, Ca, Cr, Cu, Cd, Dy, Ga, Ge, Hf, In, Lu, Mg, Mo, Ni, Rb, Sc, Si, But not limited to, oxide, nitride, oxynitride, and magnesium fluoride of a metal selected from the group consisting of Zn, Zr, and Yb. .
The inorganic material-containing
In one embodiment of the present invention, a sputtering method is used. First, the
The process conditions in the above embodiment are listed below.
- Base substrate: polyethylene terephthalate (PET) thickness 188 mm, transmittance 90%
- Initial vacuum degree: 2x10 -5 torr
- Sputtering target for inorganic layer coating: SiO 2 (size: 4 inch)
- Working gas: Ar
- Working vacuum: 2x10 -3 torr
- RF power: 200 W
4 is a SEM image of an inorganic material-containing
Referring again to FIG. 1, a metal-containing
The metal-containing
The metal-containing
The Raman active material is initially uniformly deposited on the metal thin film and the protruding structure, but is concentrated on the protruding
The nano gap, which is the spacing of the metal-containing
5 is a SEM image of a substrate on which an inorganic-metal structure is formed according to an embodiment of the present invention.
FIG. 5 shows the deposition of Ag metal-containing
2 is a view illustrating a substrate on which an inorganic-metal structure according to another embodiment of the present invention is formed.
2, a substrate on which an inorganic-metal structure according to another embodiment of the present invention is formed includes a
An inorganic material-containing
3 is a view illustrating a process of manufacturing a substrate on which an inorganic-metal structure according to an embodiment of the present invention is formed.
Referring to FIGS. 2 (A) and 2 (B), it can be seen that the
Referring to FIG. 2 (C), an inorganic
2 (D), a Raman active material is vacuum-deposited on the surface of the
6 is a reflection spectrum of a substrate on which an inorganic-metal structure according to an embodiment of the present invention is formed. The substrate on which the inorganic-metal structure was formed under the same conditions as in Fig. 5 was used.
In the reflection spectrum of FIG. 6, as a result of the absorption of light caused by the plasmon effect of the metal-containing
7 is a view showing a spectrum of a Raman signal intensity of a substrate on which an inorganic-metal structure is formed according to an embodiment of the present invention. The intensity of the Raman signal of the benzenethiol (BT) solution was measured using the substrate on which the inorganic-metal structure was formed under the same conditions as in FIG. The experimental conditions are as follows.
- excitation laser wavelength: 514 nm
- objective lens magnification: 50x
- Spot size: ~ 2㎛
- Power: 0.5mW
-Benzenethiol solution concentration: 2 mmol of ethanol in ethanol
- Laser exposure time: 10 sec
In FIG. 7, the Raman signal intensity of benzene thiol was measured from the inorganic-metal structure according to an embodiment of the present invention.
The substrate on which the inorganic-metal structure according to the present invention is formed has the following characteristics.
First, when the
Secondly, when the polymer substrate is used as Raman spectroscopy, deformation of the
Third, the inorganic material-containing
Fourth, by forming the inorganic
Fifthly, the metal-containing
The terminology used in this application is used only to describe a specific embodiment and is not intended to limit the invention. In the present application, the terms "comprises" or "having" and the like are used to specify that there is a feature, a number, a step, an operation, an element, a component or a combination thereof described in the specification, But do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, or combinations thereof.
110: substrate
120: protruding structure
130: inorganic thin film
132: inorganic thin film
140: metal-containing thin film
150: metal-containing nanoparticles
Claims (20)
Metal-containing nanoparticles formed on the protruding structure;
A metal-containing thin film formed on the surface of the substrate; And
Containing thin film formed between the metal-containing nanoparticles and the protruding structure and between the metal-containing thin film and the substrate surface,
The metal-containing nanoparticles and the metal-containing thin film layer are formed by simultaneously vacuum depositing a Raman active material on the substrate,
The Raman active material is initially uniformly deposited on the metal thin film and the protruding structure, but is concentratedly deposited on the protruding structure as the deposition progresses
Wherein the inorganic-metal structure is formed on the substrate.
And at least one or more inorganic substance-containing thin films different in material from the inorganic substance-containing thin film formed between the inorganic substance-containing thin film and the substrate
Wherein the inorganic-metal structure is formed on the substrate.
The inorganic material may be at least one of Al, Ba, Be, Ca, Cr, Cu, Cd, Dy, Ga, Ge, Hf, In, Lu, Mg, Mo, Ni, Rb, Sc, Si, Sn, Ta, , Oxide, nitride, oxynitride, and magnesium fluoride of a metal selected from the group consisting of Zn, Zr, and Yb
Wherein the inorganic-metal structure is formed on the substrate.
The inorganic material-containing thin film may be formed using any one of chemical vapor deposition (CVD), sputtering, and evaporation
Wherein the inorganic-metal structure is formed on the substrate.
Wherein the substrate is a polymer substrate,
The protruding structure is formed by surface-treating a polymer substrate
Wherein the inorganic-metal structure is formed on the substrate.
The surface treatment may be performed using any one of nanoimprinting, nanolithography, and dry etching
Wherein the inorganic-metal structure is formed on the substrate.
Wherein the dry etching is a plasma dry etching performed using at least one gas selected from the group consisting of argon, oxygen, hydrogen, helium, and nitrogen gas
Wherein the inorganic-metal structure is formed on the substrate.
The Raman active material is selected from the group consisting of Au, Ag, Cu, Pt and Pd, and alloys thereof
Wherein the inorganic-metal structure is formed on the substrate.
The vacuum deposition may be performed using one of chemical vapor deposition (CVD), sputtering, and evaporation
Wherein the inorganic-metal structure is formed on the substrate.
Wherein the distance between the protruding structures and the size of the metal-containing nanoparticles are adjusted to adjust the interval of the metal-containing nanoparticles
Wherein the inorganic-metal structure is formed on the substrate.
The substrate is a polymer substrate selected from the group consisting of acrylic polymers, polyethersulfone (PES), polycycloolefin (PCO), polyurethane resin and polycarbonate (PC)
Wherein the inorganic-metal structure is formed on the substrate.
Forming a protruding structure having an upper protruding curved surface spaced apart from each other by surface-treating the substrate;
Forming an inorganic thin film on the substrate surface and the protruding structure; And
And simultaneously forming a metal-containing nanoparticle on the upper protruding structure and a metal-containing thin film on the surface of the substrate by simultaneously vacuum-depositing the Raman active material until the nanogap is formed between the adjacent metal-containing nanoparticles However,
The Raman active material is initially uniformly deposited on the metal thin film and the protruding structure, but is concentratedly deposited on the protruding structure as the deposition progresses
Wherein the inorganic-metal structure is formed on the substrate.
And forming at least one or more inorganic substance-containing thin films different in material from the inorganic substance-containing thin film before the inorganic substance-containing thin film is formed
Wherein the inorganic-metal structure is formed on the substrate.
The inorganic material may be at least one of Al, Ba, Be, Ca, Cr, Cu, Cd, Dy, Ga, Ge, Hf, In, Lu, Mg, Mo, Ni, Rb, Sc, Si, Sn, Ta, , Oxide, nitride, oxynitride, and magnesium fluoride of a metal selected from the group consisting of Zn, Zr, and Yb
Wherein the inorganic-metal structure is formed on the substrate.
The inorganic material-containing thin film may be formed using any one of chemical vapor deposition (CVD), sputtering, and evaporation
Wherein the inorganic-metal structure is formed on the substrate.
Wherein the substrate is a polymer substrate,
The surface treatment may be performed using any one of nanoimprinting, nanolithography, and dry etching
Wherein the inorganic-metal structure is formed on the substrate.
Wherein the dry etching is a plasma dry etching performed using at least one gas selected from the group consisting of argon, oxygen, hydrogen, helium, and nitrogen gas
Wherein the inorganic-metal structure is formed on the substrate.
The Raman active material is selected from the group consisting of Au, Ag, Cu, Pt and Pd, and alloys thereof
Wherein the inorganic-metal structure is formed on the substrate.
The vacuum deposition may be performed using one of chemical vapor deposition (CVD), sputtering, and evaporation
Wherein the inorganic-metal structure is formed on the substrate.
Wherein the nanogaps are controlled by controlling the distance between the protruding structures and the size of the metal-containing nanoparticles
Wherein the inorganic-metal structure is formed on the substrate.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020140129535A KR20160037372A (en) | 2014-09-26 | 2014-09-26 | substrate having inorganic-metal structure and fabricating method for the same |
| CN201580051781.XA CN107075661B (en) | 2014-09-26 | 2015-09-24 | Substrate formed with a plurality of nanogaps and method for preparing the same |
| US15/513,597 US10527494B2 (en) | 2014-09-26 | 2015-09-24 | Substrate on which multiple nanogaps are formed, and manufacturing method therefor |
| PCT/KR2015/010066 WO2016048053A1 (en) | 2014-09-26 | 2015-09-24 | Substrate on which multiple nanogaps are formed, and manufacturing method therefor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020140129535A KR20160037372A (en) | 2014-09-26 | 2014-09-26 | substrate having inorganic-metal structure and fabricating method for the same |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020160005617A Division KR102197546B1 (en) | 2016-01-15 | 2016-01-15 | substrate having inorganic-metal structure and fabricating method for the same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20160037372A true KR20160037372A (en) | 2016-04-06 |
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