KR20150031933A - Aluminium paste composition and solar cell device using the same - Google Patents
Aluminium paste composition and solar cell device using the same Download PDFInfo
- Publication number
- KR20150031933A KR20150031933A KR20130111782A KR20130111782A KR20150031933A KR 20150031933 A KR20150031933 A KR 20150031933A KR 20130111782 A KR20130111782 A KR 20130111782A KR 20130111782 A KR20130111782 A KR 20130111782A KR 20150031933 A KR20150031933 A KR 20150031933A
- Authority
- KR
- South Korea
- Prior art keywords
- glass frit
- weight
- solar cell
- aluminum paste
- paste composition
- Prior art date
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims abstract description 76
- 239000000203 mixture Substances 0.000 title claims abstract description 44
- 229910052782 aluminium Inorganic materials 0.000 title claims description 59
- 239000004411 aluminium Substances 0.000 title 1
- 239000011521 glass Substances 0.000 claims abstract description 79
- 238000004519 manufacturing process Methods 0.000 claims description 35
- 238000000034 method Methods 0.000 claims description 28
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 8
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 6
- 239000002952 polymeric resin Substances 0.000 claims description 6
- 229920003002 synthetic resin Polymers 0.000 claims description 6
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Inorganic materials [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 claims description 5
- 229910052783 alkali metal Inorganic materials 0.000 claims description 4
- 150000001340 alkali metals Chemical class 0.000 claims description 4
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims description 4
- 150000001342 alkaline earth metals Chemical class 0.000 claims description 4
- 229910052788 barium Inorganic materials 0.000 claims description 4
- 229910052712 strontium Inorganic materials 0.000 claims description 4
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 claims description 3
- 230000004907 flux Effects 0.000 claims description 3
- YEXPOXQUZXUXJW-UHFFFAOYSA-N lead(II) oxide Inorganic materials [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 claims description 2
- 239000003960 organic solvent Substances 0.000 claims description 2
- 239000000758 substrate Substances 0.000 description 32
- 238000010304 firing Methods 0.000 description 16
- 238000002360 preparation method Methods 0.000 description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 12
- 229910052710 silicon Inorganic materials 0.000 description 12
- 239000010703 silicon Substances 0.000 description 12
- 238000007639 printing Methods 0.000 description 9
- 239000000243 solution Substances 0.000 description 9
- 238000000576 coating method Methods 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- -1 0 ~ 40 wt% Inorganic materials 0.000 description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 229920000056 polyoxyethylene ether Polymers 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- 238000007611 bar coating method Methods 0.000 description 4
- 238000001035 drying Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 4
- 238000007756 gravure coating Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 238000005215 recombination Methods 0.000 description 4
- 230000006798 recombination Effects 0.000 description 4
- 238000007650 screen-printing Methods 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- 239000004094 surface-active agent Substances 0.000 description 4
- 239000000654 additive Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 235000014113 dietary fatty acids Nutrition 0.000 description 3
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 3
- 239000002270 dispersing agent Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000000194 fatty acid Substances 0.000 description 3
- 229930195729 fatty acid Natural products 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000007645 offset printing Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- 239000013008 thixotropic agent Substances 0.000 description 3
- JNYAEWCLZODPBN-JGWLITMVSA-N (2r,3r,4s)-2-[(1r)-1,2-dihydroxyethyl]oxolane-3,4-diol Chemical class OC[C@@H](O)[C@H]1OC[C@H](O)[C@H]1O JNYAEWCLZODPBN-JGWLITMVSA-N 0.000 description 2
- ULQISTXYYBZJSJ-UHFFFAOYSA-N 12-hydroxyoctadecanoic acid Chemical compound CCCCCCC(O)CCCCCCCCCCC(O)=O ULQISTXYYBZJSJ-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 2
- 239000002202 Polyethylene glycol Substances 0.000 description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 150000004665 fatty acids Chemical class 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 238000007641 inkjet printing Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 229920001223 polyethylene glycol Polymers 0.000 description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 description 2
- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 2
- 239000001267 polyvinylpyrrolidone Substances 0.000 description 2
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000006748 scratching Methods 0.000 description 2
- 230000002393 scratching effect Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 239000000080 wetting agent Substances 0.000 description 2
- IBLKWZIFZMJLFL-UHFFFAOYSA-N 1-phenoxypropan-2-ol Chemical compound CC(O)COC1=CC=CC=C1 IBLKWZIFZMJLFL-UHFFFAOYSA-N 0.000 description 1
- 229940114072 12-hydroxystearic acid Drugs 0.000 description 1
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 1
- WMDZKDKPYCNCDZ-UHFFFAOYSA-N 2-(2-butoxypropoxy)propan-1-ol Chemical compound CCCCOC(C)COC(C)CO WMDZKDKPYCNCDZ-UHFFFAOYSA-N 0.000 description 1
- GZMAAYIALGURDQ-UHFFFAOYSA-N 2-(2-hexoxyethoxy)ethanol Chemical compound CCCCCCOCCOCCO GZMAAYIALGURDQ-UHFFFAOYSA-N 0.000 description 1
- XYVAYAJYLWYJJN-UHFFFAOYSA-N 2-(2-propoxypropoxy)propan-1-ol Chemical compound CCCOC(C)COC(C)CO XYVAYAJYLWYJJN-UHFFFAOYSA-N 0.000 description 1
- COBPKKZHLDDMTB-UHFFFAOYSA-N 2-[2-(2-butoxyethoxy)ethoxy]ethanol Chemical compound CCCCOCCOCCOCCO COBPKKZHLDDMTB-UHFFFAOYSA-N 0.000 description 1
- JDSQBDGCMUXRBM-UHFFFAOYSA-N 2-[2-(2-butoxypropoxy)propoxy]propan-1-ol Chemical compound CCCCOC(C)COC(C)COC(C)CO JDSQBDGCMUXRBM-UHFFFAOYSA-N 0.000 description 1
- WFSMVVDJSNMRAR-UHFFFAOYSA-N 2-[2-(2-ethoxyethoxy)ethoxy]ethanol Chemical compound CCOCCOCCOCCO WFSMVVDJSNMRAR-UHFFFAOYSA-N 0.000 description 1
- WAEVWDZKMBQDEJ-UHFFFAOYSA-N 2-[2-(2-methoxypropoxy)propoxy]propan-1-ol Chemical compound COC(C)COC(C)COC(C)CO WAEVWDZKMBQDEJ-UHFFFAOYSA-N 0.000 description 1
- IHCCLXNEEPMSIO-UHFFFAOYSA-N 2-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperidin-1-yl]-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethanone Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C1CCN(CC1)CC(=O)N1CC2=C(CC1)NN=N2 IHCCLXNEEPMSIO-UHFFFAOYSA-N 0.000 description 1
- UPGSWASWQBLSKZ-UHFFFAOYSA-N 2-hexoxyethanol Chemical compound CCCCCCOCCO UPGSWASWQBLSKZ-UHFFFAOYSA-N 0.000 description 1
- QCDWFXQBSFUVSP-UHFFFAOYSA-N 2-phenoxyethanol Chemical compound OCCOC1=CC=CC=C1 QCDWFXQBSFUVSP-UHFFFAOYSA-N 0.000 description 1
- DFGKGUXTPFWHIX-UHFFFAOYSA-N 6-[2-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperazin-1-yl]acetyl]-3H-1,3-benzoxazol-2-one Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)N1CCN(CC1)CC(=O)C1=CC2=C(NC(O2)=O)C=C1 DFGKGUXTPFWHIX-UHFFFAOYSA-N 0.000 description 1
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229910021364 Al-Si alloy Inorganic materials 0.000 description 1
- 239000001856 Ethyl cellulose Substances 0.000 description 1
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 1
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical class OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 1
- CTKINSOISVBQLD-UHFFFAOYSA-N Glycidol Chemical compound OCC1CO1 CTKINSOISVBQLD-UHFFFAOYSA-N 0.000 description 1
- 229920002153 Hydroxypropyl cellulose Polymers 0.000 description 1
- 229910018068 Li 2 O Inorganic materials 0.000 description 1
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical class CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 1
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229920002125 Sokalan® Polymers 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 150000003973 alkyl amines Chemical class 0.000 description 1
- 125000002877 alkyl aryl group Chemical group 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000010344 co-firing Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 229920001249 ethyl cellulose Polymers 0.000 description 1
- 235000019325 ethyl cellulose Nutrition 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 150000002314 glycerols Chemical class 0.000 description 1
- 238000007646 gravure printing Methods 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 239000003906 humectant Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 239000001863 hydroxypropyl cellulose Substances 0.000 description 1
- 235000010977 hydroxypropyl cellulose Nutrition 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000000651 laser trapping Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 230000037361 pathway Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000004584 polyacrylic acid Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920002503 polyoxyethylene-polyoxypropylene Polymers 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 150000003445 sucroses Chemical class 0.000 description 1
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 1
- JLGLQAWTXXGVEM-UHFFFAOYSA-N triethylene glycol monomethyl ether Chemical compound COCCOCCOCCO JLGLQAWTXXGVEM-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
- C03C8/18—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions containing free metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
- H01B1/023—Alloys based on aluminium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The present invention relates to a composition comprising a) 60 to 80% by weight aluminum powder,
b) 3.1-5 wt% glass frit, and c) 16.9-35 wt% organic vehicle; Wherein the glass frit comprises a fused glass frit and a non-fused glass frit, wherein the non-fused glass frit is comprised between 3 and 4 wt% based on the total weight of the composition, and the softening point of the non- ≪ / RTI >
Description
The present invention relates to an aluminum paste composition capable of producing a solar cell rear electrode having excellent water resistance and suppressing bowing, and a solar cell device using the same.
Solar cells, which are rapidly spreading in recent years, are next-generation energy sources, and are electronic devices that convert solar energy, which is clean energy, directly to electricity.
1, an N +
The
The aluminum paste composition for forming the
It is known that such a conventional aluminum paste composition causes a bowing phenomenon when the solar cell back electrode is formed, and has a disadvantage that water resistance is not sufficient.
Korean Patent Laid-Open Publication No. 10-2013-0042392 discloses a solar cell having a structure in which aluminum powder is used for the purpose of preventing a bowing phenomenon when a solar cell back electrode is formed; PbO-based first glass frit containing BaO; A non-PbO-based second glass frit containing BaO; And an organic vehicle.
However, the composition has the disadvantage that it can not control the difference in the degree of warping when the content of the lead-free glass frit is increased.
Disclosure of Invention Technical Problem [8] Accordingly, the present invention has been made keeping in mind the above problems occurring in the prior art, and an object of the present invention is to provide an aluminum paste composition for a back electrode of a solar cell having excellent water resistance and suppressing bowing.
It is another object of the present invention to provide a method of manufacturing a solar cell backside electrode with minimized warpage using the aluminum paste composition.
It is another object of the present invention to provide a solar cell back electrode made of the aluminum paste composition and a solar cell device having the back electrode.
According to the present invention,
About the total weight of the composition
a) 60 to 80% by weight of aluminum powder,
b) 3.1-5% by weight of glass frit, and
c) from 16.9 to 35% by weight of an organic vehicle;
Wherein the glass frit comprises a fused glass frit and a non-fused glass frit, wherein the non-fused glass frit is comprised between 3 and 4 wt% based on the total weight of the composition, and the softening point of the non- ≪ / RTI >
Further, according to the present invention,
The present invention provides a method for manufacturing a solar cell rear electrode with minimized warpage using the aluminum paste composition.
Further, according to the present invention,
A solar cell back electrode made of the aluminum paste composition, and a solar cell element having the electrode.
The aluminum paste composition of the present invention has a very excellent water resistance and greatly reduces the warpage of the silicon wafer substrate which occurs in the formation of the rear electrode.
Therefore, a solar cell element comprising a rear electrode made of the aluminum paste composition of the present invention exhibits improved efficiency.
BRIEF DESCRIPTION OF DRAWINGS FIG. 1 is a diagram schematically showing a sectional view of a solar cell element. FIG.
According to the present invention,
About the total weight of the composition
a) 60 to 80% by weight of aluminum powder,
b) 3.1-5% by weight of glass frit, and
c) from 16.9 to 35% by weight of an organic vehicle;
Wherein the glass frit comprises a fused glass frit and a non-fused glass frit, wherein the non-fused glass frit is comprised between 3 and 4 wt% based on the total weight of the composition, and the softening point of the non- The present invention relates to an aluminum paste composition.
When the content of the glass frit is low in the aluminum paste composition for a solar cell, the denseness of the aluminum after firing is lowered and the surface is easily broken, so that the glass frit should be contained in an amount of 3% by weight or more.
In order to improve the water resistance, it is necessary that the non-fused glass frit is contained in an amount of 3 to 4% by weight.
However, in such a case, there arises a problem that it is difficult to control the difference in the degree of warping of the silicon substrate as the content of the non-linked glass frit is increased.
Accordingly, the present invention is characterized by solving the above problems by using the softening point of the non-consolidated glass frit contained in the aluminum paste composition within a range of from 550 to 800 캜.
Hereinafter, the components of the aluminum paste composition will be described in detail.
1) Aluminum powder
In the aluminum paste of the present invention, aluminum powder having an average particle diameter of 1 to 10 mu m is used. When aluminum powder having a D 50 of less than 1 μm is used, thermal stability during firing is reduced to cause bump and bowing, and when aluminum powder having a D 50 of more than 10 μm is used, the filling rate is lowered and the efficiency is lowered. The aluminum powder is preferably contained in an amount of 60 to 80% by weight based on the total weight of the aluminum paste composition. When the aluminum powder is contained in an amount of less than 60% by weight, the printed aluminum layer becomes thinner after firing, and the rear BSF layer is not sufficiently formed, resulting in a problem of inefficiency. When the aluminum powder is more than 80% by weight, Which may result in warpage.
2) Glass Frit
Generally, the glass frit is contained in an amount of 0.01 to 5% by weight, preferably 0.05 to 5% by weight based on the total weight of the aluminum paste composition. When the content of the glycidol is less than 0.01% by weight, the adhesion of the wafer may deteriorate. If the content exceeds 5% by weight, the bowing increases and the resistance increases, thereby lowering the efficiency of the solar cell.
However, when the phenomenon of surface rubbing (or scratching) occurs after firing, the glass frit is preferably contained in an amount of 3.1 to 5% by weight. This is because when the glass frit is contained in an amount of less than 3.1% by weight, the density of the aluminum powder after firing is lowered to cause the above problems.
The glass frit used in the present invention may have a Tg of 380 to 550 ° C. More preferably, the Tg may have a value in the range of 400 to 450 占 폚. When the Tg of the glass frit is less than 380 DEG C, the thermal expansion coefficient of the glass frit is relatively large, which may cause a problem of increasing the warpage of the wafer after the firing process in the solar cell manufacturing process. The frit must be melted to provide adhesion between the aluminum layer and the silicon wafer layer. However, the glass frit may not be sufficiently melted during the firing process, resulting in a problem of poor adhesion
The glass frit includes a fused glass frit and a non-fused glass frit.
The flux-based glass frit that can be used in the present invention may include, for example, PbO, Al 2 O 3 , SiO 2 , and B 2 O 3 . If necessary, at least one member selected from the group consisting of R ' 2 O (R': alkali metal), R "O (R": alkaline earth metal excluding Sr and Ba), ZnO, SrO and P 2 O 5 As shown in FIG.
More specifically, the flux-based glass frit contains 50 to 80 wt% of PbO, 1 to 15 wt% of Al 2 O 3, 1 to 20 wt% of SiO 2 , 5 to 40 wt% of B 2 O 3 , R ' 2 O (R 0 to 10% by weight of ZnO, 0 to 10% by weight of SrO, 0 to 10% by weight of Al 2 O 3 , 0 to 10% by weight of Al 2 O 3 , 0 to 10% But it is not limited thereto.
The non-consolidated glass frit usable in the present invention is, for example, Al 2 O 3 . SiO 2, Bi 2 O 3, BaO, B 2 O 3, ZnO, SrO, Na 2 O, P 2 O 5, R "'2 O (R"': alkali metal other than the Na), R "" O ( R "": an alkaline earth metal other than Sr and Ba).
More specifically, Al 2 O 3 1 to 10% by weight, SiO 2 1-15 wt.%, Bi 2 O 3, 0 ~ 40 wt%, BaO 0.01 ~ 0.1 wt%, B 2 O 3 20 ~ 50 wt%, ZnO 0 ~ 10 wt%, SrO 0 ~ 5% by weight, Na 2 0 to 5% by weight of P 2 O, 0 to 10% by weight of P 2 O 5 , 0 to 5% by weight of Li 2 O and 0 to 5% by weight of K 2 O. However, the present invention is not limited thereto.
When the non-linked glass frit is contained in an amount of 3 to 4% by weight of the total weight of the aluminum paste, the non-fused glass frit is contained in an amount of 0.01 to 1% by weight based on the total weight of the aluminum paste, Use of a non-frit having a softening point (Tdsp) temperature of 550 to 800 ° C in the same component improves surface scratching and improves bowing.
3) Organic Vehicle
The organic vehicle solution contained in the aluminum paste of the present invention is preferably contained in an amount of 16.9 to 35% by weight based on the total weight of the aluminum paste. When the organic vehicle solution is contained in an amount of less than 16.9% by weight, the viscosity becomes too high and the printability is poor. When the organic vehicle solution is contained in an amount exceeding 35% by weight, the content of aluminum powder is decreased, do.
The organic vehicle solution may be prepared by dissolving a polymer resin in an organic solvent, and may further include a thixotropic agent, a wetting agent, an additive, and the like, if necessary.
The organic vehicle solution used in the present invention further contains 75 wt% or more of solvent, 1 to 25 wt% of polymer resin, 5 wt% or less of humectant and thixotropic agent, and 1 to 10 wt% of additive can do.
The solvent is preferably a solvent having a breaking point in the range of about 150-300 DEG C so that the paste can be dried during the printing process and the flowability can be controlled. As the solvent widely used, glycol ethers such as tripropylene glycol methyl ether, dipropylene glycol n-propyl ether, dipropylene glycol n-butyl ether, tripropylene glycol n-butyl ether, propylene glycol phenyl ether, diethylene glycol ethyl ether , Diethylene glycol n-butyl ether, diethylene glycol hexyl ether, ethylene glycol hexyl ether, triethylene glycol methyl ether, triethylene glycol ethyl ether, triethylene glycol n-butyl ether, ethylene glycol phenyl ether, , Ethylene glycol, and the like.
Examples of the polymer resin include polyvinylpyrrolidone, polyvinyl alcohol, polyethylene glycol, ethylcellulose, hydroxypropylcellulose, rosin, phenol resin, and acrylic resin. The content of the polymer resin is preferably 1 to 25% by weight, and more preferably 5 to 25% by weight based on the total weight of the organic vehicle solution. When the addition amount of the polymer resin is less than 1% by weight, the printing property and dispersion stability of the paste deteriorate. When the addition amount exceeds 25% by weight, the paste may not be printed.
As the thixotropic agent and wetting agent, any of those generally used in this field may be used without limitation.
Examples of the additives include those commonly used in the field such as a dispersing agent and the like. As the dispersing agent, commercially available surfactants may be used, and these may be used alone or in combination of two or more. Such surfactants include, for example, ether type surfactants such as alkyl polyoxyethylene ethers, alkylaryl polyoxyethylene ethers, and polyoxyethylene polyoxypropylene copolymers as nonionic surfactants; Ester ethers such as polyoxyethylene ethers of glycerine esters, polyoxyethylene ethers of sorbitan esters, polyoxyethylene ethers of sorbitol esters; Ester types such as polyethylene glycol fatty acid esters, glycerin esters, sorbitan esters, propylene glycol esters, sucrose esters, and alkylpolyglucosides; Fatty acid alkanolamide, polyoxyethylene fatty acid amide, polyoxyethylene alkylamine, amine oxide; Polyvinyl alcohol, polyvinylpyrrolidone, polyacrylic acid, polyacrylic acid-maleic acid copolymer, poly 12-hydroxystearic acid and the like as the polymeric surfactant.
Commercially available products include highmer KD (manufactured by Uniqema), AKM 0531 (manufactured by Nippon Oil Co., Ltd.), KP (manufactured by Shinetsu Chemical Industry Co., Ltd.), POLYFLOW (manufactured by Kyoeisha Chemical Co., ), EFTOP (manufactured by TOKEM PRODUCTS CO., LTD.), Asahi guard, Surflon (manufactured by Asahi Glass Co., Ltd.), SOLSPERSE (manufactured by Geneca), EFKA PB 821 (manufactured by Ajinomoto Co., Ltd.), BYK-184, BYK-185, BYK-2160 and Anti-Terra U (manufactured by BYK).
The dispersant is preferably contained in an amount of 1 to 10% by weight, more preferably 1 to 5% by weight based on the total weight of the organic vehicle solution.
The present invention also relates to a method of manufacturing a solar cell rear electrode with minimized warpage using the aluminum paste composition.
The present invention also relates to a solar cell rear electrode made of the above aluminum paste composition.
The electrode is formed through a process of printing, drying and firing an aluminum paste composition on a substrate, for example, a silicon wafer substrate having an Ag front electrode formed thereon. The printing method is not particularly limited, and for example, screen printing, gravure printing, offset printing, and the like can be used. Drying is performed at 60 to 300 ° C for several seconds to several minutes, and firing can be performed at 600 to 950 ° C for several seconds.
The electrode thus formed is applied to the back electrode of the solar cell element, suppressing the generation of bumps on the surface during firing, and thus has excellent appearance and warpage of the silicon wafer substrate, and has excellent water resistance.
The present invention relates to a solar cell element provided with a rear electrode made of the aluminum paste composition.
Hereinafter, an embodiment of a method of manufacturing a solar cell according to the present invention will be described.
According to the manufacturing method of the solar cell of the present invention, firstly, irregularities are formed on one surface of the substrate by the texture etching method of the crystalline silicon wafer substrate.
The substrate may be a monocrystalline or polycrystalline silicon wafer substrate and may be doped with a Group 3 element such as B, Ga, In or the like as a P-type impurity.
When the substrate is immersed in the etching liquid composition or when the etching liquid composition is sprayed onto the substrate, etching proceeds to form irregularities on the surface of the substrate.
If the surface of the substrate is roughened by the unevenness formation, the reflectance of the incident light decreases, and the optical trapping amount increases, thereby reducing the optical loss.
The width (width) of the irregularities is not particularly limited, and may be, for example, 1 to 20 탆 in size. The height of the concavities and convexities is not particularly limited, and may be, for example, 1 to 15 占 퐉. When the height of the concave and convex corresponds to the above range, it can be applied to a substrate having a thickness of 180 탆 or less. An emitter layer, which can be formed on the concave and convex portions, is then formed with a uniform doping profile, Uniformity of the pn junction at the interface between the antireflection film and the antireflection film can be improved and then the front electrode forming paste can be filled up to the concave portion formed according to the shape of the concave and convex portion to be coated, The resistance of the front electrode can be reduced.
The shape of the concavities and convexities is not particularly limited, and examples thereof include a pyramidal shape, a square shape, and a triangular shape.
After the formation of the unevenness, a step of forming an emitter layer on the unevenness; Forming an antireflection film on the emitter layer; Forming a front electrode through the antireflection film to connect to the emitter layer; And forming a rear electrode on the rear surface of the substrate.
The emitter layer may be formed on the substrate with the opposite conductivity type to the substrate. For example, the emitter layer may be doped with a Group 5 element P, As, Sb or the like as an n-type impurity. When the substrate and the emitter layer are doped with an impurity of the opposite conduction type, a pn junction is formed at the interface between the substrate and the emitter layer. When light is irradiated to the pn junction, photovoltaic power can be generated due to the photoelectric effect .
The emitter layer may be formed by a method such as a diffusion method, a spray method, an injection method, a printing method, or the like. In one example, the emitter layer can be formed by implanting an n-type impurity into the p-type semiconductor substrate.
Thereafter, an antireflection film is formed on the emitter layer.
Antireflection coatings passivate defects present in the surface or bulk of the emitter layer and reduce the reflectivity of sunlight incident on the front side of the substrate. When defects present in the emitter layer are passivated, the recombination sites of the minority carriers are removed to increase the open-circuit voltage (Voc) of the solar cell. When the reflectance of the sunlight decreases, the amount of light reaching the pn junction increases, Isc) is increased, so that the conversion efficiency of the solar cell is improved.
The antireflection film may be formed of any one single film selected from the group consisting of a silicon nitride film, a silicon nitride film including hydrogen, a silicon oxide film, a silicon oxynitride film, MgF 2 , ZnS, TiO 2 and CeO 2 , or a combination of two or more films It may have a multilayer structure.
The antireflection film may be formed by vacuum deposition, chemical vapor deposition, spin coating, screen printing or spray coating, but is not limited thereto.
Thereafter, a front electrode is formed on the antireflection film.
The front electrode is in contact with the emitter layer through the antireflection film, and is used as a carrier pathway of the carrier generated by the photoelectric effect.
The front electrode can be formed by applying a silver paste composition for forming a front electrode, known in the art, on the antireflection film in the form of a bar. The coating method is not particularly limited and includes, for example, a spin coating method, a casting method, a micro gravure coating method, a gravure coating method, a bar coating method, a roll coating method, a wire bar coating method, an immersion coating method, A flexographic printing method, an offset printing method, an inkjet printing method, a nozzle printing method, and the like.
After the application, a conventional heat treatment process may be performed. The silver powder becomes a liquid phase at a high temperature by the heat treatment, and is again recrystallized into a solid phase, and the front electrode is connected to the emitter layer by a fire through phenomenon penetrating the antireflection film through the glass frit.
Next, a rear electrode is formed on the rear surface of the substrate.
The backside electrode acts as another carrier's path of travel caused by the photoelectric effect. On the other hand, a back surface field layer may be formed on the interface between the rear electrode and the substrate. The backside layer can prevent the carrier from moving to the backside of the substrate and recombining. If the recombination of the carriers is prevented, the open voltage can be increased and the efficiency of the solar cell can be improved.
The rear electrode can be formed by applying the above-described aluminum paste composition according to the present invention to the rear surface of the substrate. The back electrode may have a structure in which a silver electrode and an aluminum electrode are formed, and the electrode may be manufactured using a silver paste composition known in the art.
The coating method is not particularly limited and includes, for example, a spin coating method, a casting method, a micro gravure coating method, a gravure coating method, a bar coating method, a roll coating method, a wire bar coating method, an immersion coating method, A flexographic printing method, an offset printing method, an inkjet printing method, a nozzle printing method, and the like.
After the application, a conventional heat treatment process may be performed. By the heat treatment, the aluminum contained in the aluminum paste composition application portion diffuses through the rear surface of the substrate, thereby forming the rear front layer at the interface between the rear electrode and the substrate. The backside layer minimizes the rear recombination of the electrons generated by the sunlight, thereby contributing to the improvement of the efficiency of the solar cell.
Hereinafter, the present invention will be described in more detail with reference to examples and comparative examples. However, the following examples and comparative examples are provided for illustrating the present invention, and the present invention is not limited by the following examples, and various modifications and changes may be made.
Manufacturing example 1 to 4: Glass Frit Produce
Glass frit was prepared with the ingredients and contents shown in Table 1 below.
Example 1: Manufacture of aluminum paste
75% by weight of aluminum powder having a particle size distribution of 3 to 6 탆, 1.0% by weight of a glass-based glass frit of Preparation Example 1, 3.0% by weight of a non-consolidated glass frit of Preparation Example 2, and dissolved in glycol ether And 21 wt% of the organic vehicle solution were sequentially added, followed by stirring at 1,000 rpm for 3 minutes using a mixer that performs rotation and revolution simultaneously to produce an aluminum paste.
Example 2: Manufacture of aluminum paste
An aluminum paste was prepared in the same manner as in Example 1 except that 1.0 weight% of the glass frit of the above-mentioned Preparation Example 1 and 3.0 weight% of the non-fusion glass frit of Preparation Example 3 were used as the glass frit.
Example 3: Manufacture of aluminum paste
An aluminum paste was prepared in the same manner as in Example 1 except that 1.0 wt% of the glass-frit used in the preparation example 1 and 3.0 wt% of the glass-frit used in the preparation example 4 were used as the glass frit.
Example 4: Manufacture of aluminum paste
75% by weight of an aluminum powder having a particle size distribution of 3 to 6 μm, 1.0% by weight of a liquid-based glass frit of Preparation Example 1 as the glass frit, 4.0% by weight of a non-consolidated glass frit of the Preparation Example 2, 20% by weight of an organic vehicle solution dissolved and dissolved therein was added sequentially, and then stirred at 1,000 rpm for 3 minutes using a mixer that performs rotation and revolution simultaneously to prepare an aluminum paste.
Example 5: Manufacture of aluminum paste
An aluminum paste was prepared in the same manner as in Example 4 except that 1.0 wt% of the glass-frit used in Preparation Example 1 and 4.0 wt% of the glass-frit used in Preparation Example 4 were used as the glass frit.
Comparative Example 1: Manufacture of aluminum paste
An aluminum paste was prepared in the same manner as in Example 1 except that 1.0 wt% of the glass-frit used in the preparation example 1 was used as the glass frit and 3.0 wt% was used as the glass-frit.
Comparative Example 2: Manufacture of aluminum paste
An aluminum paste was prepared in the same manner as in Example 1 except that 1.0 wt% of the glass-frit of the preparation example 1 and 3.0 wt% of the glass-frit of the preparation example 6 were used as the glass frit.
Comparative Example 3: Manufacture of aluminum paste
An aluminum paste was prepared in the same manner as in Example 4 except that 1.0 wt% of the glass frit of the preparation example 1 and 4.0 wt% of the non-fused glass frit of the production example 5 were used as the glass frit.
Comparative Example 4: Manufacture of aluminum paste
An aluminum paste was prepared in the same manner as in Example 4 except that 1.0 wt% of the glass-frit used in the Preparation Example 1 was used as the glass frit and 4.0 wt% was used as the non-fused glass frit.
Test Example 1: Manufacturing and testing of solar cells
A 156 x 156 mm, 200 μm thick monocrystalline wafer was subjected to a surface texturing process to form a pyramid height of about 4-6 microns and then coated on the N-side of the wafer with SiNx. Subsequently, the Bus Bar was printed on the backside of the wafer using silver paste and dried. Then, the paste exemplified in Examples 1 to 3 and Comparative Examples 1 to 6 was applied using a screen printing plate of 250 mesh and dried . The coating amount was printed to be 1.5 ± 0.1 g before drying, dried, and finger lines were printed and dried on the front SiNx side using silver paste.
The silicon wafer thus processed was fired in an infrared continuous firing furnace so that the firing temperature was 720-900 ° C to produce a solar cell.
The firing process may be performed by front and back co-firing while passing the silicon wafer into a belt furnace. In this case, the belt furnace includes a burn-out zone of about 600 ° C and a firing zone of about 800-950 ° C. After burning the organic matter in the paste, the front and rear surfaces are melted to form an electrode do.
After aligning the four corners of the solar cell manufactured above with the bottom, the degree of buckling of the central portion was measured to evaluate the degree of warping of the solar cell. Generally, bowing is good at less than 1.5 mm. The results are shown in Table 2 below.
As can be seen from the above Table 2, when the glass-bonded glass frit of Production Example 1 and the non-fused glass frit of Production Examples 2 to 4 having a Tdsp of 550 ° C or higher were mixed and used (Examples 1 to 5) It was confirmed that the bowing was not remarkably manifested and the increase of the flexural characteristics was not large even when the blending ratio of the non-fused glass frit was increased.
On the other hand, as can be seen in Table 3, in the case of Comparative Examples 1 to 4, which is a combination of the glass-based glass frit of Production Example 1 and the non-consolidated glass frit having a Tdsp of less than 550 ° C (Production Example 5 or 6) ), And it was confirmed that the increase of the flexural characteristics was also remarkably increased as the blending ratio of the non-linked glass frit was increased.
10: silicon wafer substrate 20: N + layer
30: antireflection film 40: front electrode
50: P + layer 60: rear electrode
Claims (8)
a) 60 to 80% by weight of aluminum powder,
b) 3.1-5% by weight of glass frit, and
c) from 16.9 to 35% by weight of an organic vehicle;
Wherein the glass frit comprises a fused glass frit and a non-fused glass frit, wherein the non-fused glass frit is comprised between 3 and 4 wt% based on the total weight of the composition, and the softening point of the non- ≪ / RTI >
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