KR20150014685A - Plating solution containing Au-Pd alloy for manufacturing PPF plating-layer of semiconductor leadframe - Google Patents

Plating solution containing Au-Pd alloy for manufacturing PPF plating-layer of semiconductor leadframe Download PDF

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KR20150014685A
KR20150014685A KR1020130090212A KR20130090212A KR20150014685A KR 20150014685 A KR20150014685 A KR 20150014685A KR 1020130090212 A KR1020130090212 A KR 1020130090212A KR 20130090212 A KR20130090212 A KR 20130090212A KR 20150014685 A KR20150014685 A KR 20150014685A
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palladium
gold
plating solution
cyanide
plating
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KR1020130090212A
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Korean (ko)
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길기환
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길기환
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    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/56—Electroplating: Baths therefor from solutions of alloys
    • C25D3/62—Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of gold
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
    • H01L23/49582—Metallic layers on lead frames

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Electroplating And Plating Baths Therefor (AREA)

Abstract

According to the present invention, disclosed is an ultra-thin gold-palladium alloy plating solution for forming the PPF plating layer of a semiconductor lead frame. The ultra-thin gold-palladium alloy plating solution for forming the PPF plating layer of a semiconductor lead frame is a plating solution which forms a plating layer on the surface of a lead frame during a semiconductor manufacturing process. The plating solution includes at least one selected from a group comprising potassium gold (I) cyanide, potassium gold (III) cyanide, gold (III) chloride hydrate, and sodium gold sulfite; and at least one selected from a group comprising dichloro tetraammonium palladium, palladium chloride anhydrous, palladium (II) acetate, palladium (II) nitrate, and palladium (II) cyanide. Accordingly, the manufacturing efficiency of a semiconductor process can be increased by securing adhesion, corrosion resistance, and wirebondability properties.

Description

반도체 리드프레임의 PPF 도금층 형성용 초박막 금-파라듐합금 도금액{Plating solution containing Au-Pd alloy for manufacturing PPF plating-layer of semiconductor leadframe}[0001] The present invention relates to an ultra-thin gold-palladium alloy plating solution for forming a PPF plating layer of a semiconductor lead frame (plating solution containing Au-Pd alloy for manufacturing PPF plating-layer of a semiconductor leadframe)

본 발명은 반도체 리드프레임의 PPF 도금층 형성용 초박막 금-파라듐합금 도금액에 관한 것으로, 더욱 상세하게는 밀착성, 내부식성은 물론 와이어본더빌리티(Wirebondability) 특성을 확보하여 반도체 공정의 제조효율을 향상시키는 반도체 리드프레임의 PPF 도금층 형성용 초박막 금-파라듐합금 도금액에 관한 것이다.
The present invention relates to an ultra-thin gold-palladium alloy plating solution for forming a PPF plating layer of a semiconductor lead frame, and more particularly to a plating solution for a gold-palladium alloy plating solution for improving the manufacturing efficiency of a semiconductor process by securing adhesion and corrosion resistance as well as wirebondability Ultra-thin gold-palladium alloy plating liquid for forming a PPF plating layer of a semiconductor lead frame.

일반적으로, 반도체공정은 두 가지 공정으로 이루어지는데, 리드프레임(Leadframe)의 틀을 제작하는 리드프레임 제조공정(Leadframe manufacturing process)과 제조된 리드프레임의 상부에 칩(Chip)을 얹어 조립을 완성하는 패키지공정(IC package process)이다.2. Description of the Related Art In general, a semiconductor process is composed of two processes: a leadframe manufacturing process for manufacturing a frame of a leadframe and a chip on the top of the manufactured leadframe. IC package process.

상기 2가지의 공정에는 필수적으로 그 각각의 프로세스상 도금액을 이용하여 적층되는 도금층을 이용하게 된다.In the above two processes, a plating layer which is laminated using essentially the respective plating liquid is used.

리드프레임 공정(Leadframe mfg process)에서는 동이나 동합금 또는 니켈이나 니켈합금의 표면에 은으로 도금층을 형성하고, 이어지는 패키지 공정에서 칩을 얹고 솔더(Soldering)를 이용하여 도금층을 형성하면, 반도체 칩(Semiconductor chip)을 제조할 수 있게 된다.In the leadframe process, when a plating layer is formed of copper or a copper alloy or a nickel or nickel alloy on the surface thereof and a chip is laid on the surface of the nickel / nickel alloy layer by soldering to form a plating layer, chip can be manufactured.

이렇게 리드프레임 공정과 패키지 공정에서 모두 도금이라는 공정을 거치게 되어 공수가 증가하여 제조효율이 저감되는 문제를 일거에 해결하기 위하여 이 두 공정을 하나의 공정으로 획기적으로 줄인 것이 프리플레이트프레임(PPF, Pre-Plated Frame)이다. In order to solve the problem of reducing the manufacturing efficiency by increasing the number of air holes through the plating process in both the lead frame process and the package process, the two processes are greatly reduced to one process by using the free plate frame (PPF, Pre -Plated Frame.

이 프리플레이트프레임으로 작업공정의 간소화 및 이로 인한 반도체 원가절감이 실현되고, 아울러 Soldering 도금을 하지 않기 때문에 납(Pb)을 공정에서 제거할 수 있어 친환경성이 아울러 확보되는 장점을 가지게 된다.This free plate frame realizes the simplification of the work process and the reduction of the semiconductor cost due to this, and since the soldering plating is not performed, the lead (Pb) can be removed from the process, and the advantage of being environmentally friendly can be obtained.

그러나, 이러한 프리플레이트프레임은 밀착성 및 내부식성이 낮아 공정중이나 사용중에 불량이 다발되는 문제점이 있었다.
However, such a free plate frame has poor adhesion and corrosion resistance, resulting in frequent defects during or during the process.

따라서, 본 발명이 이루고자 하는 기술적 과제는 밀착성, 내부식성은 물론 와이어본더빌리티(Wirebondability) 특성을 확보하여 반도체 공정의 제조효율을 향상시키는 반도체 리드프레임의 PPF 도금층 형성용 초박막 금-파라듐합금 도금액을 제공하는 것이다.
Accordingly, an object of the present invention is to provide an ultra-thin gold-palladium alloy plating solution for forming a PPF plating layer of a semiconductor lead frame that secures adhesion, corrosion resistance, and wirebondability, .

본 발명은 상술한 기술적 과제를 해결하기 위하여, 반도체 리드프레임의 PPF공정에 사용되는 초박막 금-파라듐합금 도금층을 형성하기 위한 도금액에 있어서, 상기 도금액은 도금층의 금 성분의 소스로 포타시움골드(I)시아나이드(Potassium gold(I) cyanide), 포타시움골드(III)시아나이드(Potassium gold(III) cyanide), 골드클로라이드하이드레이트(Gold(III) chloride hydrate) 및 소디움골드설파이트(Sodium gold sulfite)로 이루어진 군에서 선택된 적어도 하나와, 도금층의 팔라듐 성분의 소스로 디클로로테트라암모니움팔라듐(Dichloro tetraammonium palladium), 팔라듐클로라이드언히드러스(Palladium chloride anhydrous), 팔라듐아세테이트(Palladium(II) acetate), 팔라듐나이트레이트(Palladium(II) nitrate) 및 팔라듐시아나이드(Palladium(II) cyanide)로 이루어진 군에서 선택된 적어도 하나를 포함하는 것을 특징으로 하는 반도체 리드프레임의 PPF 도금층 형성용 초박막 금-파라듐합금 도금액을 제공한다.The present invention is a plating solution for forming an ultra-thin gold-palladium alloy plating layer used in a PPF process of a semiconductor lead frame, wherein the plating solution contains potassium metal (I) as a source of the gold component of the plating layer, ) Potassium gold (I) cyanide, Potassium gold (III) cyanide, Gold (III) chloride hydrate and Sodium gold sulfite And at least one selected from the group consisting of palladium tetraammonium palladium, palladium chloride anhydrous, palladium (II) acetate, palladium nitrate At least one selected from the group consisting of palladium (II) nitrate and palladium (II) cyanide For the PPF plated layer of the semiconductor lead frame as ranging form ultra thin film of gold-palladium alloy and provides a plating solution.

본 발명의 일실시예에 의하면, 상기 도금액에는 전도염인 소디움하이드로겐포스페이트(Sodium hydrogen phosphate), 포타시움시아나이드(Potassium cyanide), 포타시움타(르)트레이트(Potassium tartrate), 소디움설페이트(Sodium sulfate) 또는 소디움시트레이트(Sodium citrate)가 더 포함될 수 있다.According to an embodiment of the present invention, the plating solution may contain sodium hydrogen phosphate, potassium cyanide, potassium tartrate, sodium sulfate, ) Or sodium citrate may be further included.

본 발명의 다른 실시예에 의하면, 상기 도금액에는 전도향상제인 포타시움하이드로겐(Potassium hydrogen), 소디움하이드로겐(Sodium hydrogen), 포타시움카보네이트(Potassium carbonate), 젖산(Lactic acid), 말레익산(Malic acid) 또는 소디움글루콘산(Sodium gluconate)가 더 포함될 수 있다.According to another embodiment of the present invention, the plating solution may contain a conductive agent such as Potassium hydrogen, Sodium hydrogen, Potassium carbonate, Lactic acid, Malic acid, Or sodium gluconate may be further included.

본 발명의 또 다른 실시예에 의하면, 상기 도금액에는 킬레이트제인 소디움-EDTA(Sodium-EDTA), 니트릴로트리아세트산(Nitrilo triacetic acid) 또는 폴리이미드(Polyimide)가 더 포함될 수 있다.According to another embodiment of the present invention, the plating solution may further include a chelating agent such as sodium-EDTA, nitrilo triacetic acid, or polyimide.

본 발명의 또 다른 실시예에 의하면, 상기 도금액에는 안정제인 글리신(Glycine), 글리세린(Glycerin), 인산(Phosphoric acid) 또는 붕산(Boric acid)이 더 포함될 수 있다.According to another embodiment of the present invention, the plating solution may further contain stabilizer Glycine, glycerin, phosphoric acid, or boric acid.

본 발명의 또 다른 실시예에 의하면, 상기 도금액은 계면활성제인 폴리에틸렌글리콜 테르톡실 페닐에테르(Polyethylene glycol tertoctyl phenylether), 알킬 디유릴에테르 디설포네이트 소디움염(Alkyl diurylether disulfonate sodium salt), 에틸렌디아민(Ethylene diamine) 또는 폴리에틸렌글리콜설퓨릭산(Polyethylene glycol sulfuric acid)이 더 포함될 수 있다.
According to another embodiment of the present invention, the plating solution may contain at least one selected from the group consisting of polyethylene glycol tert-octyl phenyl ether, alkyl di- yryl ether disulfonate sodium salt, ethylenediamine diamine, or polyethylene glycol sulfuric acid.

본 발명에 따르는 반도체 리드프레임의 PPF 도금층 형성용 초박막 금-파라듐합금 도금액에 의하면, 밀착성, 내부식성은 물론 와이어본더빌리티(Wirebondability) 특성을 확보하여 반도체 공정의 제조효율을 향상시키는 효과가 있다.
According to the ultra-thin gold-palladium alloy plating solution for forming the PPF plating layer of the semiconductor lead frame according to the present invention, the adhesion and corrosion resistance as well as wirebondability are ensured, thereby improving the manufacturing efficiency of the semiconductor process.

이하, 본 발명을 더욱 상세하게 설명한다.Hereinafter, the present invention will be described in more detail.

본 발명에 따르는 반도체 리드프레임의 PPF공정에 사용되는 초박막 금-파라듐합금 도금층을 형성하기 위한 도금액에 있어서, 상기 도금액은 도금층의 금 성분의 소스로 포타시움골드(I)시아나이드(Potassium gold(I) cyanide), 포타시움골드(III)시아나이드(Potassium gold(III) cyanide), 골드클로라이드하이드레이트(Gold(III) chloride hydrate) 및 소디움골드설파이트(Sodium gold sulfite)로 이루어진 군에서 선택된 적어도 하나와, 도금층의 팔라듐 성분의 소스로 디클로로테트라암모니움팔라듐(Dichloro tetraammonium palladium), 팔라듐클로라이드언히드러스(Palladium chloride anhydrous), 팔라듐아세테이트(Palladium(II) acetate), 팔라듐나이트레이트(Palladium(II) nitrate) 및 팔라듐시아나이드(Palladium(II) cyanide)로 이루어진 군에서 선택된 적어도 하나를 포함하는 특징이 있다.In the plating solution for forming the ultra thin gold-palladium alloy plating layer used in the PPF process of the semiconductor lead frame according to the present invention, the plating solution is a potassium metal (I) cyanide at least one selected from the group consisting of cyanide, cyanide, potassium cyanide, gold (III) chloride hydrate and sodium gold sulfite, Dichloro tetraammonium palladium, Palladium chloride anhydrous, Palladium (II) acetate, Palladium (II) nitrate and the like were used as the source of the palladium component of the plated layer. And at least one selected from the group consisting of palladium (II) cyanide.

상기 포타시움골드(I)시아나이드(Potassium gold(I) cyanide), 포타시움골드(III)시아나이드(Potassium gold(III) cyanide), 골드클로라이드하이드레이트(Gold(III) chloride hydrate) 및 소디움골드설파이트(Sodium gold sulfite)로 이루어진 군에서 선택된 적어도 하나는 금 입자를 도금액에 제공하는 소스(source)로 사용되는 것으로, 그 농도는 2~15g/ℓ의 수용액상일 수 있다.The above potassium (I) cyanide, potassium (III) cyanide, gold (III) chloride hydrate and sodium gold sulfite Sodium gold sulfite) is used as a source for providing gold particles to the plating solution, and the concentration may be in the range of 2 to 15 g / l of aqueous solution.

또한, 상기 디클로로테트라암모니움팔라듐(Dichloro tetraammonium palladium), 팔라듐클로라이드언히드러스(Palladium chloride anhydrous), 팔라듐아세테이트(Palladium(II) acetate), 팔라듐나이트레이트(Palladium(II) nitrate) 및 팔라듐시아나이드(Palladium(II) cyanide)로 이루어진 군에서 선택된 적어도 하나 팔라듐 입자를 도금액에 제공하는 소스(source)로 사용되는 것으로, 0.2~10g/ℓ의 수용액상일 수 있다.In addition, the above-mentioned dichlorotetraammonium palladium, palladium chloride anhydrous, palladium (II) acetate, palladium (II) nitrate and palladium cyanide Palladium (II) cyanide), which may be in the range of 0.2 to 10 g / l of aqueous solution.

한편, 상기 도금액은 금과 팔라듐외에 전도염을 더 포함할 수 있는데, 소디움하이드로겐포스페이트(Sodium hydrogen phosphate), 포타시움시아나이드(Potassium cyanide), 포타시움타드레이트(Potassium tartrate), 소디움설페이트(Sodium sulfate) 또는 소디움시트레이트(Sodium citrate)에서 선택적으로 사용할 수 있다.The plating solution may further include a conductive salt in addition to gold and palladium. Examples of the plating solution include sodium hydrogen phosphate, potassium cyanide, potassium tartrate, sodium sulfate, Or sodium citrate. ≪ / RTI >

상기 전도염의 특성을 배가하기 위하여 상기 도금액은 전도향상제를 더 포함하는데, 포타시움하이드로겐(Potassium hydrogen), 소디움하이드로겐(Sodium hydrogen), 포타시움카보네이트(Potassium carbonate), 라틱산(Lactic acid), 말레익산(Malic acid) 또는 소디움글루콘산(Sodium gluconate)가 선택적으로 사용될 수 있다.In order to double the characteristics of the conductive salt, the plating solution further includes a conductivity enhancer, which may be selected from the group consisting of Potassium hydrogen, Sodium hydrogen, Potassium carbonate, Lactic acid, Malic acid or sodium gluconate may be optionally used.

아울러, 상기 도금액에는 금속이온을 흡착하여 도금층 형성에 기여하도록 킬레이트제(chelating agent)를 사용할 수 있는데, 소디움-EDTA(Sodium-EDTA), 니트릴로트리아세트산(Nitrilo triacetic acid) 또는 폴리이미드(Polyimide)가 더 포함할 수 있다.In addition, a chelating agent may be used in the plating solution to adsorb metal ions to contribute to the formation of a plating layer. For example, sodium-EDTA, nitrilo triacetic acid, or polyimide may be used. .

한편, 상기 도금액의 저장안정성이나 도금공정후 균일한 도금층 형성을 위하여 안정제를 사용할 수 있는데, 이러한 안정제로는 글리신(Glycine), 글리세린(Glycerin), 인산(Phosphoric acid) 또는 붕산(Boric acid)이 더 포함할 수 있다.On the other hand, a stabilizer may be used for the storage stability of the plating solution or for forming a uniform plating layer after the plating process. Examples of the stabilizer include Glycine, Glycerin, Phosphoric acid or Boric acid .

또한, 상기 도금액은 계면활성제인 폴리에틸렌글리콜 테르톡실 페닐에테르(Polyethylene glycol tertoctyl phenylether), 알킬 디유릴에테르 디설포네이트 소디움염(Alkyl diurylether disulfonate sodium salt), 에틸렌디아민(Ethylene diamine) 또는 폴리에틸렌글리콜설퓨릭산(Polyethylene glycol sulfuric acid)이 더 포함될 수 있다.The plating solution may contain at least one selected from the group consisting of polyethylene glycol tert-octyl phenyl ether, alkyl diaryl ether disulfonate sodium salt, ethylenediamine or polyethylene glycol sulfurous acid (Polyethylene glycol sulfuric acid).

실시예 1Example 1

수용액상으로 Potassium gold(I) cyanide 12g/ℓ, Dichlorotetraammonium palladium 3g/ℓ, Sodium hydrogen phosphate 150g/ℓ, Sodium hydrogen 30g/ℓ, Sodium gluconate 20g/ℓ, Nitrilo triacetic acid 2g/ℓ 및 Polyethylene glycol sulfuric acid 0.5g/ℓ를 혼합하여 pH 11.8의 도금액을 제조하여, 55 ℃ 작업온도를 유지하며, 전류밀도 1 A/㎡, 도금시간 5초로 처리하여 Au와 Pd와의 중량비 = 98 : 2이고, 도금두께 0.0055㎛인 동합금으로 이루어진 반도체 리드프레임의 최상부층(top layer)으로 도금층을 형성하였다.Sodium hydrogen 30 g / ℓ, Sodium gluconate 20 g / ℓ, Nitrilo triacetic acid 2 g / ℓ, and Polyethylene glycol sulfuric acid 0.5 g / ℓ, Potassium gold (I) cyanide 12 g / ℓ, Dichlorotetraammonium palladium 3 g / m 2 and a plating time of 5 seconds to obtain a plating solution having a weight ratio of Au to Pd of 98: 2, a plating thickness of 0.0055 탆 A plated layer was formed as a top layer of a semiconductor lead frame made of a copper alloy.

실시예 2Example 2

수용액상으로 Potassium gold(I)cyanide 11g/ℓ, Palladium(II) cyanide 4g//ℓ, Potassium cyanide 120g/ℓ, Potassium hydrogen 50g/ℓ, Potassium carbonate 30g/ℓ, Glycine 20g/ℓ, Sodium-EDAT 10g/ℓ, Polyethylene glycol tertoctyl phenylether 0.4g/ℓ를 혼합하여 pH 13의 도금액을 제조하여, 55 ℃ 작업온도를 유지하며, 전류밀도 1 A/㎡, 도금시간 5초로 처리하여 동합금으로 이루어진 반도체 리드프레임의 최상부층(top layer)으로 Au와 Pd와의 중량비 = 92 : 8이고, 도금두께 0.0055㎛인 도금층을 형성하였다.Potassium cyanide 120 g / l, Potassium hydrogen 50 g / l, Potassium carbonate 30 g / l, Glycine 20 g / l, Sodium-EDAT 10 g / l, Potassium cyanide 11 g / / l and polyethylene glycol tertoctyl phenylether at a current density of 1 A / m < 2 > and a plating time of 5 seconds to prepare a plating solution having a pH of 13, A plating layer having a top layer of Au: Pd ratio of 92: 8 and a plating thickness of 0.0055 mu m was formed.

실시예 3Example 3

수용액상으로 Potassium gold(III) cyanide 11g/ℓ, Dichloro tetraammonium palladium 8g/ℓ, Potassium tartrate 100g/ℓ, Lactic acid 50g/ℓ, Boric acid 30g/ℓ, Polyimide 5g/ℓ, Polyethylene glycol sulfuric acid 1g/ℓ를 혼합하여 pH 5.8의 도금액을 제조하여, 55 ℃ 작업온도를 유지하며, 전류밀도 1 A/㎡, 도금시간 5초로 처리하여 동합금으로 이루어진 반도체 리드프레임의 최상부층(top layer)으로 Au와 Pd와의 중량비 = 90 : 10이고, 도금두께 0.0055㎛인 도금층을 형성하였다.1 g / ℓ of Potassium gold (III) cyanide, 8 g / ℓ of Dichloro tetraammonium palladium, 100 g / ℓ of Potassium tartrate, 50 g / ℓ of Lactic acid, 30 g / ℓ of Boric acid, 5 g / ℓ of Polyimide, And a plating solution having a pH of 5.8 was prepared. The plating solution was treated at a current density of 1 A / m < 2 > and a plating time of 5 seconds at a working temperature of 55 DEG C to form a top layer of a semiconductor lead frame made of a copper alloy, A weight ratio = 90: 10, and a plating thickness of 0.0055 mu m.

실시예 4Example 4

수용액상으로 Gold(III) chloride hydrate 6g/ℓ, Palladium chloride anhydrous 1.5g/ℓ, Sodium citrate 70g/ℓ, Malic acid 45g/ℓ, Phosphoric acid 5g/ℓ, Nitrilo triacetic acid 5g/ℓ, Alkyl diurylether disulfonate sodium salt 0.2g/ℓ를 혼합하여 pH 3.6의 도금액을 제조하여, 55 ℃ 작업온도를 유지하며, 전류밀도 1 A/㎡, 도금시간 5초로 처리하여 동합금으로 이루어진 반도체 리드프레임의 최상부층(top layer)으로 Au와 Pd와의 중량비 = 97 : 3이고, 도금두께 0.0055㎛인 도금층을 형성하였다.Sodium citrate 70 g / ℓ, Malic acid 45 g / ℓ, Phosphoric acid 5 g / ℓ, Nitrilo triacetic acid 5 g / ℓ, Alkyl diurylether disulfonate sodium (0.2 g / l) to prepare a plating solution having a pH of 3.6. The plating solution was treated at a current density of 1 A / m < 2 > and a plating time of 5 seconds to maintain a working temperature of 55 [deg.] C to form a top layer of a semiconductor lead frame , A weight ratio of Au to Pd = 97: 3, and a plating thickness of 0.0055 mu m was formed.

실시예 5Example 5

수용액상으로 Sodium gold sulfite 5g/ℓ, Palladium(II) acetate 1g/ℓ, Sodium sulfate 60g/ℓ, Sodium gluconate 45g/ℓ, Glycine 15g/ℓ, Sodium-EDTA 5g/ℓ, Ethylene diamine 0.7g/ℓ를 혼합하여 pH 8.2의 도금액을 제조하여, 55 ℃ 작업온도를 유지하며, 전류밀도 1 A/㎡, 도금시간 5초로 처리하여 동합금으로 이루어진 반도체 리드프레임의 최상부층(top layer)으로 Au와 Pd와의 중량비 = 94 : 6이고, 도금두께 0.0055㎛인 도금층을 형성하였다.Sodium sulfite 5 g / ℓ, Palladium II acetate 1 g / ℓ, Sodium sulfate 60 g / ℓ, Sodium gluconate 45 g / ℓ, Glycine 15 g / ℓ, Sodium EDTA 5 g / ℓ and Ethylene diamine 0.7 g / M 2 and a plating time of 5 seconds to obtain a top layer of a semiconductor lead frame made of a copper alloy and having a weight ratio of Au to Pd = 94: 6, and a plating layer having a thickness of 0.0055 mu m was formed.

실시예 6Example 6

수용액상으로 Sodium gold sulfite 6g/ℓ, Palladium(II) nitrate 2g/ℓ, Sodium Citrate 50g/ℓ, Lactic acid 25g/ℓ, Boric acid 15g/ℓ, Polyimide 5g/ℓ, Polyethylene glycol sulfuric acid 1g/ℓ를 혼합하여 pH 6.5의 도금액을 제조하여, 55 ℃ 작업온도를 유지하며, 전류밀도 1 A/㎡, 도금시간 5초로 처리하여 동합금으로 이루어진 이루어진 반도체 리드프레임의 최상부층(top layer)으로 Au와 Pd와의 중량비 = 99 : 1이고, 도금두께 0.0055㎛인 도금층을 형성하였다.Sodium citrate, 50 g / l, Lactic acid, 15 g / l, Polyimide, 5 g / l, Polyethylene glycol sulfuric acid, 1 g / And a plating solution having a pH of 6.5 was prepared. The plating solution was treated at a current density of 1 A / m < 2 > and a plating time of 5 seconds at a working temperature of 55 DEG C to form a top layer of a semiconductor lead frame made of a copper alloy, A weight ratio of 99: 1, and a plating thickness of 0.0055 mu m.

실험예 1 밀착성 평가EXPERIMENTAL EXAMPLE 1 Evaluation of Adhesion

실시예 1 ~ 6에 의한 도금층을 395℃로 2분간 열처리를 하여 현미경과 육안으로 부풀어오름(Blistering), 벗겨짐(Peeling) 및 들뜸(Lifting)을 확인하였으며, 이어 도금층을 커터나이프로 긁어 보니 벗겨짐이 미발생하였다.The plating layer according to Examples 1 to 6 was subjected to heat treatment at 395 DEG C for 2 minutes to confirm blistering, peeling, and lifting with a microscope and the naked eye. After peeling off the plating layer with a cutter knife, Respectively.

또한 스카치테이프(3M Scotch tape - #540, #610)를 도금층에 밀착하여 강하게 부착한 후 필테이스를 하였으나 벗겨지거나 들뜨는 현상이 미발생하였다.In addition, Scotch tape (3M Scotch tape - # 540, # 610) was tightly adhered to the plated layer and strongly adhered to the plated layer. However, peeling or lifting did not occur.

실험예 2 내부식성 평가Experimental Example 2 Evaluation of corrosion resistance

실시예 1 ~ 6에 의한 도금층을 395℃로 2분간 열처리를 하여 NaCl 5% 수용액을 스프레이하는 염수분무테스터기 안에서 40℃, 24시간 동안 방치한 후 적출하여 현미경과 육안으로 부식여부를 확인하였으나, 부풀어오름이나 벗겨짐, 들뜸 현상은 미발생하였다.The plating layer according to Examples 1 to 6 was subjected to a heat treatment at 395 DEG C for 2 minutes and then left in a brine spray tester in which a 5% aqueous solution of NaCl was sprayed, at 40 DEG C for 24 hours and then taken out and examined for microscopic and visual corrosion. No rise, peeling, or lifting occurred.

실험예 3 와이어본더빌리티 평가Experimental Example 3 Evaluation of Wire Bondability

실시예 1 ~ 6에 의한 도금층을 395℃로 2분간 열처리를 하여 온도 200~220℃에서 와이어(gold wire)를 사용하여 테스트(bonding full test)를 실시하는데, 이는 와이어가 끊어질 때까지 당겨지는 힘을 측정하는 것으로, 이 테스트의 합격기준은 5g 이상의 당김값(full value)이다.The plating layer according to Examples 1 to 6 was subjected to a heat treatment at 395 DEG C for 2 minutes and a bonding full test was performed at a temperature of 200 to 220 DEG C using a gold wire, By measuring the force, the acceptance criterion of this test is a full value of 5 g or more.

앞서 밀착성 평가, 내부식성 평가 및 와이어본더빌리티 평가에 의한 결과를 아래 표 1에 나타냈다.The results of adhesion evaluation, corrosion resistance evaluation and wire bondability evaluation are shown in Table 1 below.

실시예 1Example 1 실시예 2Example 2 실시예 3Example 3 실시예 4Example 4 실시예 5Example 5 실시예 6Example 6 밀착성Adhesiveness OO OO OO OO OO OO 내부식성Corrosion resistance OO OO OO OO OO OO Wire
bondabilityWire
bondability OO OO OO OO OO OO

(O는 우수함을, X는 열악함을 표기)(O indicates excellent, X indicates poor)

상기 표 1을 참조하면, 본 발명에 의한 도금액의 특성이 반도체 리드프레임의 도금층으로 사용되는 경우에 밀착성, 내부식성 및 와이어본더빌리티가 우수함을 확인할 수 있다.Referring to Table 1, when the characteristics of the plating solution according to the present invention is used as a plating layer of a semiconductor lead frame, it can be confirmed that the adhesion, corrosion resistance, and wire bondability are excellent.

Claims (6)

반도체 리드프레임의 PPF공정에 사용되는 초박막 금-파라듐합금 도금층을 형성하기 위한 도금액에 있어서,
상기 도금액에는 도금층의 금 성분의 소스로 포타시움골드(I)시아나이드(Potassium gold(I) cyanide), 포타시움골드(III)시아나이드(Potassium gold(III) cyanide), 골드클로라이드하이드레이트(Gold(III) chloride hydrate) 및 소디움골드설파이트(Sodium gold sulfite)로 이루어진 군에서 선택된 적어도 하나와,
도금층의 팔라듐 성분의 소스로 디클로로테트라암모니움팔라듐(Dichloro tetraammonium palladium), 팔라듐클로라이드언히드러스(Palladium chloride anhydrous), 팔라듐아세테이트(Palladium(II) acetate), 팔라듐나이트레이트(Palladium(II) nitrate) 및 팔라듐시아나이드(Palladium(II) cyanide)로 이루어진 군에서 선택된 적어도 하나를 포함하는 것을 특징으로 하는 반도체 리드프레임의 PPF 도금층 형성용 초박막 금-파라듐합금 도금액.
In a plating solution for forming an ultra thin gold-palladium alloy plating layer used in a PPF process of a semiconductor lead frame,
Potassium gold (I) cyanide, Potassium gold (III) cyanide, Gold chloride (III) cyanide, and Gold chloride (III) cyanide were used as the source of the gold component of the plating layer. chloride hydrate and sodium gold sulfite, and at least one selected from the group consisting of sodium chloride,
Dichloro tetraammonium palladium, Palladium chloride anhydrous, Palladium (II) acetate, Palladium (II) nitrate and the like were used as the source of the palladium component of the plated layer. Palladium (III) cyanide, and palladium (II) cyanide. 2. The ultra-thin gold-palladium alloy plating solution for forming a PPF plating layer of a semiconductor lead frame according to claim 1,
제 1 항에 있어서,
상기 도금액에는 전도염인 소디움하이드로겐포스페이트(Sodium hydrogen phosphate), 포타시움시아나이드(Potassium cyanide), 포타시움타트레이트(Potassium tartrate), 소디움설페이트(Sodium sulfate) 또는 소디움시트레이트(Sodium citrate)가 더 포함되는 것을 특징으로 하는 반도체 리드프레임의 PPF 도금층 형성용 초박막 금-파라듐합금 도금액.
The method according to claim 1,
The plating solution may further contain a conductive salt such as sodium hydrogen phosphate, potassium cyanide, potassium tartrate, sodium sulfate, or sodium citrate. Wherein the gold-palladium alloy plating solution for forming a PPF plating layer of a semiconductor lead frame is characterized in that it is a gold-palladium alloy plating solution.
제 1 항에 있어서,
상기 도금액에는 전도향상제인 포타시움하이드로겐(Potassium hydrogen), 소디움하이드로겐(Sodium hydrogen), 포타시움카보네이트(Potassium carbonate), 젖산(Lactic acid), 말레익산(Malic acid) 또는 소디움글루콘산(Sodium gluconate)가 더 포함되는 것을 특징으로 하는 반도체 리드프레임의 PPF 도금층 형성용 초박막 금-파라듐합금 도금액.
The method according to claim 1,
Potassium hydrogen, sodium hydrogen, potassium carbonate, lactic acid, malic acid, or sodium gluconate are added to the plating solution. Wherein the copper foil is a gold-palladium alloy plating liquid for forming a PPF plating layer of a semiconductor lead frame.
제 1 항에 있어서,
상기 도금액에는 킬레이트제인 소디움-EDTA(Sodium-EDTA), 니트릴로트리아세트산(Nitrilo triacetic acid) 또는 폴리이미드(Polyimide)가 더 포함되는 것을 특징으로 하는 반도체 리드프레임의 PPF 도금층 형성용 초박막 금-파라듐합금 도금액.
The method according to claim 1,
Wherein the plating solution further comprises a chelating agent sodium-EDTA, nitrilo triacetic acid, or polyimide. The ultra-thin gold-palladium alloy for forming a PPF plating layer of a semiconductor lead frame Plating solution.
제 1 항에 있어서,
상기 도금액에는 안정제인 글리신(Glycine), 글리세린(Glycerin), 인산(Phosphoric acid) 또는 붕산(Boric acid)이 더 포함되는 것을 특징으로 하는 반도체 리드프레임의 PPF 도금층 형성용 초박막 금-파라듐합금 도금액.
The method according to claim 1,
Wherein the plating solution further comprises a stabilizer Glycine, Glycerin, Phosphoric acid or Boric acid as a stabilizer.
제 1 항에 있어서,
상기 도금액은 계면활성제인 폴리에틸렌글리콜 테르톡실 페닐에테르(Polyethylene glycol tertoctyl phenylether), 알킬 디유릴에테르 디설포네이트 소디움염(Alkyl diurylether disulfonate sodium salt), 에틸렌디아민(Ethylene diamine) 또는 폴리에틸렌글리콜설퓨릭산(Polyethylene glycol sulfuric acid)이 더 포함되는 것을 특징으로 하는 반도체 리드프레임의 PPF 도금층 형성용 초박막 금-파라듐합금 도금액.The method according to claim 1,
The plating solution may contain at least one selected from the group consisting of polyethylene glycol tert-octyl phenyl ether, alkyl diaryl ether disulfonate sodium salt, ethylenediamine, polyethylene glycol, polyethylene glycol, glycol sulfuric acid) for forming a PPF plating layer of a semiconductor lead frame.
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