KR20150014179A - Susceptor for chemical of vapor deposition apparatus - Google Patents

Susceptor for chemical of vapor deposition apparatus Download PDF

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Publication number
KR20150014179A
KR20150014179A KR1020130089517A KR20130089517A KR20150014179A KR 20150014179 A KR20150014179 A KR 20150014179A KR 1020130089517 A KR1020130089517 A KR 1020130089517A KR 20130089517 A KR20130089517 A KR 20130089517A KR 20150014179 A KR20150014179 A KR 20150014179A
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KR
South Korea
Prior art keywords
disk
rod
process chamber
susceptor
deposition
Prior art date
Application number
KR1020130089517A
Other languages
Korean (ko)
Inventor
김길중
Original Assignee
김길중
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김길중 filed Critical 김길중
Priority to KR1020130089517A priority Critical patent/KR20150014179A/en
Publication of KR20150014179A publication Critical patent/KR20150014179A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a susceptor for a process chamber for CVD (Chemical Vapor Deposition), and more particularly, to a susceptor for chemical vapor deposition (CVD), which is capable of preventing breakage of a deposition target, To susceptors for process chambers for vapor deposition.
In order to achieve this, a susceptor for a process chamber for chemical vapor deposition according to the present invention comprises:
A disk 10 disposed inside the process chamber C and having a deposition object O placed thereon;
A lifting means (20) for the disc (10); And
A rod 31 which is supported on the inner bottom surface of the process chamber C and is in contact with the evaporation object O through the disk 10; A supporter 30 comprising a body 32 slidably coupled to the lower portion of the disc 10 and a guide 33 guiding the lifting operation of the body 32;
Being made to include the
The rod (31)
A detachable tip head 311 is provided at the upper end,
The tip head 311 is made of SIC coated graphite,
.

Description

≪ Desc / Clms Page number 1 > SUSCEPTOR FOR CHEMICAL OF VAPOR DEPOSITION APPARATUS FOR CHEMICAL VAPOR DEPOSITION.

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a susceptor for a process chamber for chemical vapor deposition (CVD), and more particularly, to a susceptor for chemical vapor deposition (CVD), which is capable of preventing breakage of a deposition target, To susceptors for process chambers for vapor deposition.

In order to develop new materials, chemical vapor deposition (CVD) is widely used in vapor deposition (VD) for depositing a thin film on the surface of a substrate such as a semiconductor or glass.

Among various techniques for susceptors for process chambers for chemical vapor deposition,

"Lifting device" is proposed as the Utility Model Registration No. 10-2006-0023021 (published on March 13, 2006, hereinafter referred to as "prior art").

In the prior art,

A showerhead arranged in the process chamber and injecting a process gas supplied from the gas supply unit onto the substrate, a susceptor arranged at a predetermined distance apart from the showerhead, a susceptor arranged vertically in the susceptor, A lift pin disposed at a plurality of holes formed in the lift pin, a plate coupled to a lower end of the lift pin, an upper portion supporting the plate, a lower portion driving shaft exposed through the process chamber, And a driving unit connected to a lower portion of the driving shaft.

At this time, the susceptor is fixedly disposed inside the process chamber, and a substrate is placed on the susceptor.

Generally, a heater for maintaining the substrate at a proper temperature is formed in the susceptor so as to form a thin film having a uniform thickness during the deposition process, and is connected to an external power source.

Looking at the deposition process,

After the internal space of the process chamber is formed in a vacuum state, the heater inside the susceptor is heated through an external power source to heat the substrate to a proper temperature for deposition.

When the process gas is injected through the showerhead, a chemical reaction occurs in the inner space of the process chamber to form a thin film on the substrate.

When the deposition process is completed through the above process, the driving shaft, which receives the power from the driving unit disposed outside the process chamber, starts rising.

As the drive shaft rises, the plate connected to the drive shaft rises simultaneously, and the lift pin coupled to the upper portion of the plate rises.

At this time, the susceptor fixedly disposed inside the process chamber does not flow.

Therefore, the substrate placed on top of the susceptor rises by the lift pins.

According to this, a space portion is formed between the substrate and the susceptor.

At this time, the process chamber is opened, and the robot arm enters the space portion between the substrate and the susceptor from the outside, thereby drawing out the substrate to the outside.

When the substrate is pulled out, the plate and the lift pin are lowered again by the driving unit.

A general deposition process is performed through the above process. In order to prevent abrasion and deformation of the lifting pin due to repetitive lifting and lowering operations, a bushing is generally disposed between the susceptor and the lift pin.

1 and 2, the bushing 2 is coupled to the lower portion of the disk 1 disposed within the process chamber C and has through holes 5 , And two or more rollers (3) are arranged radially with respect to the through hole (5).

The disk 1 is guided smoothly up and down by the rotating operation in which the roller 3 disposed inside the bushing 2 slides along the lift pin 4 when the disk 1 is lifted or lowered.

That is, the friction generated in the lift pin 4 is minimized.

However, in the conventional bushing 1, the roller 3 is disposed only on one side.

2, when the roller 3 for guiding the bushing 1 is disposed only on the upper portion of the bushing 1, as the bushing 1 is repeatedly moved up and down, the lift pins 4) to the right and left.

That is, it is difficult for the center axis of the lift pin 4 to maintain a vertical state, and the tilt angle indicating the inclination of the lift pin 4 is increased.

As the tilt angle of the lift pin 4 increases, the friction between the roller 3 and the lift pin 4 increases and a jam phenomenon occurs in which the lift pin 4 stops moving up and down within the bushing 1 .

As a result, when the lift pin 4 is tilted without maintaining a vertical state, the substrate G supported horizontally by the lift pins 4 may be deformed or broken due to the flow.

The substrate G is heated to various temperatures according to the deposition method in the process chamber C. Due to the temperature difference between the substrate G and the lift pins 4 in contact with the substrate G, And the substrate G are in contact with each other.

The object of the present invention is to provide a susceptor for a chemical vapor deposition process chamber for chemical vapor deposition, which prevents destruction of a deposition target during a chemical vapor deposition process and minimizes the occurrence of marks on the surface of the deposition target object.

According to an aspect of the present invention, there is provided a process chamber susceptor for chemical vapor deposition,

A disk disposed in the process chamber and having an object to be deposited thereon;

Elevating means for the disc; And

A rod which is supported on the bottom surface of the process chamber and passes through the disk to be in contact with the deposition target object, a body that is embedded in the rod and slides up and down along the rod and is fixedly coupled to the lower portion of the disk, A supporter made up of a guiding guide;

Being made to include the

The above-

A removable tip head is provided on the top,

The tip head is made of SIC coated graphite

.

A susceptor for a process chamber for chemical vapor deposition according to the present invention comprises:

The rod is maintained in a vertical state within the body of the supporter that descends together with the disk when the disk is lowered by the raising and lowering means, thereby maintaining the horizontal state of the deposition subject, thereby minimizing the damage of the deposition subject.

The tip head of the rod minimizes the temperature difference between the tip head and the evaporation target object to minimize the occurrence of marks on the surface of the evaporation target object.

1 is a cross-sectional view of a susceptor for a process chamber for chemical vapor deposition in accordance with the prior art;
2 is a cross-sectional view of a bushing for a susceptor according to the prior art;
3 is a cross-sectional view of a susceptor for a process chamber for chemical vapor deposition in accordance with the present invention.
4 is a diagram showing a coupling relationship between a disk and a supporter of a susceptor according to the present invention.
5 is an operational view of a susceptor for a process chamber for chemical vapor deposition in accordance with the present invention.
Figure 6 is a supporter of a susceptor for a process chamber for chemical vapor deposition in accordance with the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will now be described in detail with reference to the accompanying drawings.

3 and 4, a susceptor for a process chamber for chemical vapor deposition according to the present invention includes:

And comprises a disk 10, a lifting means 20 and a supporter 30.

Looking at each configuration,

The disk 10

As shown in Figures 3 and 4,

The support members 14 are formed at both ends of the upper surface of the deposition chamber O and the deposition object O is placed on the support 14.

A plurality of coupling spaces S that are upwardly recessed are formed in the lower portion of the disk 10. The coupling spaces S are arranged symmetrically with respect to the center of the disk 10 .

The coupling space S is divided into a first space S1 and a second space S2 by a stopper 11 formed in the coupling space S.

At least two fastening portions 13 are formed radially below the disk 10 so that the bolts 12 are engaged with the peripheral region of the coupling space S.

The elevating means 20

As shown in Figures 3 and 4,

And a shaft 21 and a driving unit 22.

The shaft 21 is integrally formed on the bottom surface of the disk 10 in a vertical direction and the lower end of the shaft 21 extends to the outside of the process chamber C through the lower portion of the process chamber C. [

The driving unit 22 is disposed outside the process chamber C and connected to the lower end of the shaft 21 exposed to the outside of the process chamber C to transmit power to the shaft 21. [

The supporter 30

As shown in Figs. 4 to 6,

A rod 31, a body 32, and a guide 33.

The rod 31 has a bar shape and is provided with a tip head 311 which is detachably mounted on an upper end thereof.

The rod 31 is inserted into the coupling space S formed in the disk 10 from the top of the disk 10 so that the tip head 311 is engaged with the stopper 11, (31) is disposed in contact with the inner bottom surface of the process chamber (C) through the disk (10).

At this time, a plurality of the rods 31 are provided in the coupling space S, respectively.

4, the upper end of the body 32 is vertically coupled to the first space S 1 formed in the disk 10.

An annular engaging portion 321 is formed at the upper end of the body 32 along the periphery thereof.

At this time, the bolt 12 is inserted into the fastening part 13 formed on the disk 10 and the annular fastening part 321 is fastened to the head part of the bolt so that the body 32 is fixed to the disk 10 .

A through hole 322 is formed in the body 32. The rod 31 is embedded in the through hole 322 and slides up and down along the rod 31. [

A first receiving hole 323a and a second receiving hole 323b are formed on the upper and lower ends of the body 32, respectively.

At least two of the first receiving holes 323a and the second receiving holes 323b may be radially formed with respect to the rod 31, And is connected to the through hole 322.

The guide (33)

4 and 6, the first guide 331 and the second receiving hole 323b are disposed at the upper and lower ends of the body 32, respectively, And a second guide 332 disposed on the second guide plate 332.

The first guide 331 and the second guide 332 are made up of rollers 331a and 332a and support shafts 331b and 332b and the support shafts 331b and 332b are connected to the rollers 331a and 332b, And both side ends of the support shafts 331b and 332b are fixedly coupled to the inner walls on both sides of the receiving holes 323a and 323b.

At this time, the guide 33 is an idle roller A, and two or more of the idle rollers A are arranged radially in the body 32 with respect to the rod 31.

Therefore, the guide 33 is brought into contact with the rod 31 and is rotated by the upward and downward linear motion of the body 32.

Hereinafter, the operation of the present invention will be described.

As shown in FIGS. 5 and 6, when the deposition process is completed in the process chamber C, a process for withdrawing the deposition target O from the process chamber C is started.

When the driving force is transmitted to the shaft 21 by the driving unit 22, the shaft 21 starts to descend.

The disk 10 coupled to the shaft 21 is lowered and the supporter 30 vertically coupled to the coupling space S of the disk 10 is lowered.

When the supporter 30 is lowered, a first guide 331 disposed on the upper portion of the body 32 and a second guide 332 disposed on the lower portion of the body 32 are moved along the rod 31 Sliding begins to descend.

The lower portion of the rod 31 is in contact with the inner bottom surface of the process chamber C and the lower portion of the tip head 311 is in contact with the upper surface of the stopper 11 formed in the engagement space S, Do not.

The deposition object O placed on the support portion 14 of the disk 10 descends along the disk 10 and comes into contact with the tip head 311 of the rod 31 and does not descend any more.

The rod 31 supports the deposition object O in a vertical state.

Since the first guide 331 and the second guide 332 support the arbitrary two points of the rod 31 inside the body 32 and slide in the vertical direction, So that it can not be shaken in the left and right direction.

Here, the arbitrary two points are portions where the first guide 311 and the second guide 332 are in contact with the rod 31 while descending, and they are always kept at a constant interval.

Therefore, the rod 31 always maintains a vertical state in the body 32 of the supporter 30 descending with the descent of the disk 10 by the ascending / descending means 20.

In other words, since the tilt angle of the central axis of the rod 31 is minimized, it is possible to maintain the horizontal state of the deposition object O supported by the rod 31 while maintaining the vertical state at all times.

As a result, the evaporation object O is prevented from flowing or falling from the upper portion of the rod 31, thereby preventing the evaporation object O from being deformed or damaged.

Therefore, it is possible to contribute to productivity improvement and cost reduction due to deformation and breakage of the evaporation object O.

In such a case, the distance between the first guide 331 and the second guide 332 is increased within a range in which the robot arm can facilitate the drawing operation, Angle can be further minimized.

As shown in FIG. 5, when the disk 10 is lowered, a space is formed between the deposition target O and the disk 10.

When the space portion is formed, the outflow opening D formed on the side surface of the process chamber C is opened and the robot arm enters the inside of the process chamber C from the outside.

The robot arm moves into the space between the deposition target O and the disk 10 to draw the deposition target O out of the process chamber C. [

When the evaporation object O is drawn out, the disk 10 is lifted up by the lifting means 20 again.

Meanwhile, in order to form a thin film with a constant thickness on the surface of the deposition object O in the deposition process, the deposition object O is heated at a proper temperature according to the deposition object O.

The upper end of the rod 31 directly supporting the deposition object O generally has an aluminum anodizing surface.

The upper end of the rod 31 made of aluminum anodizing has an advantage such as improved abrasion resistance. However, due to the temperature difference between the upper end of the rod 31 and the deposition object O, There is a case where marks are formed on the contact surface.

In the present invention, a tip head 311 is detachably mounted on the upper end of the rod 31. The tip head 311 is made of SIC (Silicon Carbide) coated graphite.

Here, SIC coating refers to a method of forming SIC on a graphite surface by reacting carbon on the graphite surface with a silicon component using a chemical vapor reaction (CVR) method.

The tip head 311 formed by the above-described process has an improved thermal conductivity than general aluminum anodizing or simple graphite.

Therefore, the temperature difference between the deposition target O and the deposition target O is rapidly reduced, thereby minimizing the occurrence of marks on the deposition target O.

Also, it can contribute to productivity improvement because of excellent heat resistance, oxidation resistance and easy replacement.

Although the present invention has been described with reference to the accompanying drawings, a susceptor for a process chamber for chemical vapor deposition having a specific shape and structure has been described. However, the present invention can be modified and changed variously by those skilled in the art, Such variations and modifications are to be construed as falling within the scope of protection of the present invention.

C: Process chamber
10: Disc
11: Stopper 12: Bolt
13: fastening part 14: support part
S:
S1: first space portion S2: second space portion
20:
21: shaft 22:
30: Supporters
31: Load
311: Tip Head
32: Body
321: annular engaging portion 322: through hole
323: receiving hole
323a: first receiving hole 323b: second receiving hole
33: Guide
331: First guide
331a: roller 331b:
332: Second Guide
332a: roller 332b:

Claims (4)

A susceptor disposed in a chemical vapor deposition process chamber and being moved up and down by a driving device,

A disk 10 disposed inside the process chamber C and having a deposition object O placed thereon;
A lifting means (20) for the disc (10); And
A rod 31 which is supported on the inner bottom surface of the process chamber C and is in contact with the evaporation object O through the disk 10; A supporter 30 comprising a body 32 slidably coupled to the lower portion of the disc 10 and a guide 33 guiding the lifting operation of the body 32;
, ≪ / RTI >

A plurality of the rods 31 are arranged below the disk 10,
The guide 33 of the supporter 30 is provided at each of the upper and lower ends of the body 32. When the disk 10 is lowered by the elevating means 20, , And the vertical position of the rod (31) is maintained in the chamber (32), whereby the horizontal state of the deposition object (O) can be maintained.
The method according to claim 1,
The guide 33 of the supporter 30 is a cylindrical idler roller which comes into contact with the rod 31 and is rotated by the linear motion of the body 32,
Wherein the idler rollers are coupled to the body (32) radially with respect to the rod (31) with at least two of the idler rollers.
The method according to claim 1,
The rod 31 is provided with a removable tip head 311 at its upper end,
Wherein the tip head (311) is comprised of SIC coated graphite. ≪ RTI ID = 0.0 > 31. < / RTI >
The method according to claim 1,
The disk 10 is formed with a plurality of engagement space portions S upwardly recessed in a lower portion thereof,
An upper end of the body 32 is inserted into the coupling space S,
Characterized in that an annular engaging portion (321) is formed in the body (32) so as to be supported by a head of a bolt (12) fastened to a region around the engaging space portion (S) Susceptors for chambers.
KR1020130089517A 2013-07-29 2013-07-29 Susceptor for chemical of vapor deposition apparatus KR20150014179A (en)

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Application Number Priority Date Filing Date Title
KR1020130089517A KR20150014179A (en) 2013-07-29 2013-07-29 Susceptor for chemical of vapor deposition apparatus

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KR2020150004671U Division KR200480806Y1 (en) 2015-07-10 2015-07-10 Susceptor for chemical of vapor deposition apparatus

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180132353A (en) 2017-06-02 2018-12-12 주식회사 트리셀 ball bushing for substrate support member
CN112779521A (en) * 2019-11-04 2021-05-11 三星显示有限公司 Deposition apparatus and substrate processing method using the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180132353A (en) 2017-06-02 2018-12-12 주식회사 트리셀 ball bushing for substrate support member
CN112779521A (en) * 2019-11-04 2021-05-11 三星显示有限公司 Deposition apparatus and substrate processing method using the same

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