KR20140123257A - Nitride semiconductor light emitting device - Google Patents

Nitride semiconductor light emitting device Download PDF

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Publication number
KR20140123257A
KR20140123257A KR1020130040327A KR20130040327A KR20140123257A KR 20140123257 A KR20140123257 A KR 20140123257A KR 1020130040327 A KR1020130040327 A KR 1020130040327A KR 20130040327 A KR20130040327 A KR 20130040327A KR 20140123257 A KR20140123257 A KR 20140123257A
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current blocking
nitride layer
type nitride
blocking pattern
electrode pad
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KR1020130040327A
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Korean (ko)
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김승용
김두성
송정섭
황성주
김동우
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일진엘이디(주)
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials

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Abstract

Discloses a nitride semiconductor light emitting device capable of maximizing light extraction efficiency by improving light scattering characteristics by forming a current interruption pattern with a material having a refractive index (n) of 2.0 or more.
The nitride semiconductor light emitting device according to the present invention includes an n-type nitride layer; An active layer formed on the n-type nitride layer; A p-type nitride layer formed on the active layer; A current blocking pattern formed on the p-type nitride layer and formed of a material having a refractive index (n) of 2.0 or more; A transparent conductive pattern formed to cover the p-type nitride layer and the current blocking pattern; A p-electrode pad formed on the transparent conductive pattern and disposed at a position corresponding to the current blocking pattern; And an n-electrode pad formed in an exposed region of the n-type nitride layer.

Description

[0001] NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE [0002]

The present invention relates to a nitride semiconductor light emitting device, and more particularly, to a nitride semiconductor light emitting device having a light shielding pattern formed by a material having a refractive index (n) of 2.0 (at 450 nm) To a nitride semiconductor light emitting device capable of maximizing the light emitting efficiency.

Recently, a GaN-based nitride semiconductor light emitting device has been mainly studied as a nitride semiconductor light emitting device. Such a GaN-based nitride semiconductor light-emitting device has been applied to high-speed switching and high-output devices such as blue and green LED light emitting devices, MESFETs, and HEMTs.

In particular, blue and green LED light-emitting devices have already undergone mass production, and global sales are increasing exponentially.

In recent years, in order to improve the light efficiency of the nitride semiconductor light emitting device, a current blocking pattern is formed under the region where the p-electrode pad is located, and a transparent conductive pattern is formed to cover the entire surface of the current blocking pattern. At this time, the transparent conductive pattern acts as an electrode of the p-electrode pad and serves as a current diffusion.

The nitride semiconductor light emitting device having the above structure mainly uses a silicon oxide (SiO 2 ) material as a current blocking pattern material. However, when a current interruption pattern is formed using a silicon oxide (SiO 2 ) material, the refractive index is only about 1.46, which has a limitation in increasing the light extraction efficiency.

A related prior art is Korean Patent No. 10-0793337 (published on Jan. 11, 2008), which discloses a nitride-based semiconductor light emitting device and a manufacturing method thereof.

An object of the present invention is to provide a nitride semiconductor light emitting device capable of maximizing light extraction efficiency by improving light scattering characteristics by forming a current blocking pattern with a material having a refractive index (n) of 2.0 (at 450 nm) or more .

Another object of the present invention is to provide a light emitting device and a light emitting device capable of maximizing light extraction efficiency by forming a current blocking pattern with a material having a refractive index n of 2.0 (at 450 nm) or more, And to provide a nitride semiconductor light emitting device capable of improving a step coverage characteristic by being designed to have an inclined plane.

In order to achieve the above object, a nitride semiconductor light emitting device according to a first embodiment of the present invention includes an n-type nitride layer; An active layer formed on the n-type nitride layer; A p-type nitride layer formed on the active layer; A current blocking pattern formed on the p-type nitride layer and formed of a material having a refractive index (n) of 2.0 or more; A transparent conductive pattern formed to cover the p-type nitride layer and the current blocking pattern; A p-electrode pad formed on the transparent conductive pattern and disposed at a position corresponding to the current blocking pattern; And an n-electrode pad formed in an exposed region of the n-type nitride layer.

According to another aspect of the present invention, there is provided a nitride semiconductor light emitting device including: an n-type nitride layer; An active layer formed on the n-type nitride layer; A p-type nitride layer formed on the active layer; A current blocking pattern formed on the p-type nitride layer and formed of a material having a refractive index (n) of 2.0 or more; A transparent conductive pattern formed to cover the upper side of the p-type nitride layer and the side and upper portions of the current blocking pattern; A p-electrode pad formed on the current blocking pattern and the transparent conductive pattern, the p-electrode pad being in direct contact with the current blocking pattern; And an n-electrode pad formed in an exposed region of the n-type nitride layer.

The nitride semiconductor light emitting device according to the present invention, a refractive index of about 1.46 of a silicon oxide (SiO 2), instead, the refractive index (Refractive index; n) titanium dioxide having a 2.0 (@ 450nm) or more (TiO 2), tantalum pentoxide (Ta 2 O 5 ) and zirconium dioxide (ZrO 2 ), it becomes possible to adjust the refractive index to a similar level between the p-type nitride layer having a refractive index of 2.4 and the transparent conductive pattern having a refractive index of 1.9, Layer, the current blocking pattern, and the transparent conductive pattern interface, the light incident from the p-type nitride layer is prevented from being reflected and lost due to the difference in refractive index, thereby increasing the light extraction efficiency.

In addition, the nitride semiconductor light emitting device according to the present invention can improve the step coverage characteristic between the current blocking pattern and the transparent conductive pattern by forming the current blocking pattern so as to have at least one inclined face, It is possible to prevent the defect that the conductive pattern is disconnected and electrically disconnected.

In addition, the nitride semiconductor light emitting device according to the present invention can be manufactured by forming a p-electrode pad of a metal type with at least one oxide material selected from titanium dioxide (TiO 2 ), tantalum pentoxide (Ta 2 O 5 ), zirconium dioxide (ZrO 2 ) The p-electrode pad can be improved in adhesion properties by electrically and physically connecting the p-electrode pad and the current blocking pattern.

1 is a cross-sectional view illustrating a nitride semiconductor light emitting device according to a first embodiment of the present invention.
2 is a schematic diagram schematically illustrating the light extraction process of the nitride semiconductor light emitting device of FIG.
3 is an enlarged view of a portion A in Fig.
4 is an enlarged view of a portion B in Fig.
5 is a cross-sectional view illustrating a nitride semiconductor light emitting device according to a second embodiment of the present invention.
FIGS. 6 and 7 are graphs showing the results of measurement of the transmittance according to wavelengths according to Examples 1 to 8 and Comparative Example 1. FIG.

BRIEF DESCRIPTION OF THE DRAWINGS The advantages and features of the present invention, and how to accomplish them, will become apparent by reference to the embodiments described in detail below with reference to the accompanying drawings. It should be understood, however, that the invention is not limited to the disclosed embodiments, but may be embodied in many different forms and should not be construed as being limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. Is provided to fully convey the scope of the invention to those skilled in the art, and the invention is only defined by the scope of the claims. Like reference numerals refer to like elements throughout the specification.

Hereinafter, a nitride semiconductor light emitting device according to preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

FIG. 1 is a cross-sectional view illustrating a nitride semiconductor light emitting device according to a first embodiment of the present invention, and FIG. 2 is a schematic diagram illustrating a light extracting process of the nitride semiconductor light emitting device of FIG.

1 and 2, the nitride semiconductor light emitting device 100 according to the first embodiment of the present invention includes an n-type nitride layer 110, an active layer 120, a p-type nitride layer 130, A transparent conductive pattern 150, a p-electrode pad 160, and an n-electrode pad 170, as shown in FIG.

An n-type nitride layer 110 is formed on the substrate 101. The n-type nitride layer 110 is formed by alternately stacking a first layer (not shown) made of AlGaN doped with silicon (Si) and a second layer (not shown) made of undoped GaN And may have a laminated structure formed thereon. Of course, the n-type nitride layer may be grown as a single nitride layer, but since it is possible to secure excellent crystallinity without cracks by growing the first and second layers in a laminated structure in which the first and second layers are alternately formed, Is more preferable.

At this time, the substrate 101 may be formed of a material suitable for growing a nitride semiconductor single crystal. Typically, a sapphire substrate is exemplified. The substrate 101 may be formed of a material selected from zinc oxide (ZnO), gallium nitride (GaN), silicon carbide (SiC), aluminum nitride (AlN), and the like in addition to the sapphire substrate It is possible. The nitride semiconductor light emitting device 100 according to an embodiment of the present invention may further include a buffer layer (not shown) interposed between the substrate 101 and the n-type nitride layer 110. At this time, the buffer layer is selectively provided on the upper surface of the substrate 101, and is formed for the purpose of eliminating lattice mismatch between the substrate 101 and the n-type nitride layer 110. Examples of the material include AlN, GaN and the like.

The active layer 120 is formed on the n-type nitride layer 110. The active layer 120 may have a single quantum well structure or a multi-quantum well structure in which a plurality of quantum well layers and a quantum barrier layer are alternately stacked between the n-type nitride layer 110 and the p- MQW) structure. That is, in the active layer 120, the quantum barrier layer is a quaternary nitride layer of AlGaInN containing Al, and the quantum well layer has a multiple quantum well structure of InGaN. The active layer 120 having such a multi-quantum well structure can suppress spontaneous polarization caused by stress and deformation that occurs.

The p-type nitride layer 130 includes, for example, a first layer (not shown) of p-type AlGaN doped with Mg with a p-type dopant and a second layer (not shown) made of p-type GaN doped with Mg And may have a laminated structure formed alternately. In addition, the p-type nitride layer 130 can act as a carrier restricting layer in the same manner as the n-type nitride layer 110. [

The current blocking pattern 140 is disposed on the p-type nitride layer 130 and is formed of a material having a refractive index of 450 or greater. The current blocking pattern 140 is formed at a position corresponding to the p-electrode pad 160 to be described later.

At this time, the current blocking pattern 140 compensates for the occurrence of light loss due to photon absorption at the lower surface corresponding to the p-electrode pad 160. The current blocking pattern 140 has a low electrical conductivity at the periphery of the p-electrode pad 160 due to the formation of the p-type nitride layer 130 with a relatively thin thickness compared to the n-type nitride layer 110 And serves to prevent the current from being biased in advance.

It is preferable to use a material having a refractive index of 2.0 or more instead of silicon oxide (SiO 2 ) having a refractive index of approximately 1.46. When the current blocking pattern 140 is formed of a material having a refractive index of 2.0 or more , the light extraction efficiency can be improved by controlling the refractive index between the p-type nitride layer 130 and the interface of the transparent conductive pattern 150 to increase the brightness. That is, when the current blocking pattern 140 is formed with a material having a refractive index (n) of 2.0 (at 450 nm) or more, a p-type nitride layer 130 having a refractive index of approximately 2.4 and a transparent conductive pattern 150 having a refractive index of 1.9, The difference in refractive index between the interface of the p-type nitride layer 130, the current blocking pattern 140 and the transparent conductive pattern 150 becomes similar to each other and the incident light from the p-type nitride layer 130 The light is prevented from being reflected and lost due to the difference in refractive index, thereby increasing the light extraction efficiency.

It is preferable that the current blocking pattern 140 is formed of at least one material selected from titanium dioxide (TiO 2 ), tantalum pentoxide (Ta 2 O 5 ), and zirconium dioxide (ZrO 2 ). At this time, titanium dioxide (TiO 2 ) has a refractive index of approximately 2.47, and tantalum pentoxide (Ta 2 O 5 ) has a refractive index of approximately 2.21.

2, titanium dioxide (TiO 2 ), tantalum pentoxide (Ta 2 O 5 ), and zirconium dioxide (TiO 2 ) having a refractive index of 2.0 or more are used instead of silicon oxide (SiO 2 ) ZrO 2 ) or the like, the holes injected from the p-type nitride layer 130 and the electrons injected from the n-type nitride layer 120 are recombined to increase the refractive index of the active layer 120 can directly pass through the current blocking pattern 140 or can increase the extraction efficiency with respect to the light that is reflected by the substrate 101 and passes through the current blocking pattern 140, thereby increasing the brightness.

The current blocking pattern 140 preferably has a thickness of 500 to 5000 ANGSTROM, more preferably 1000 to 4000 ANGSTROM. When the thickness of the current blocking pattern 140 is less than 500 ANGSTROM, the thickness of the current blocking pattern 140 is too thin, so that it may be difficult to properly exhibit the current blocking function. On the contrary, when the thickness of the current blocking pattern 140 is more than 5000 ANGSTROM, it is advantageous in terms of shielding the current, but there is a great possibility that the light extraction efficiency is lowered due to the increase in thickness.

The transparent conductive pattern 150 is formed so as to cover the upper side of the p-type nitride layer 130 and the current blocking pattern 140. The transparent conductive pattern 150 is formed for the purpose of increasing the current injection area, and is preferably formed of a transparent conductive material in order to prevent the luminance from being adversely affected. That is, the transparent conductive pattern 150 may be formed of indium tin oxide (Indium Tin Oxide, ITO), indium zinc oxide (Indium Zinc Oxide, IZO), at least one material selected from FTO (fluorine doped tin oxide, SnO 2) .

The p-electrode pad 160 is formed on the transparent conductive pattern 150 and disposed at a position corresponding to the current blocking pattern 140. The p-electrode pad 160 may have a first area and the current blocking pattern 140 may have a second area that is greater than or equal to the first area.

The n-electrode pad 170 is formed in the exposed region of the n-type nitride layer 110. The p-electrode pad 160 and the n-electrode pad 170 may be formed by any one method selected from E-Beam deposition, thermal evaporation, sputtering deposition, and the like . The p-electrode pad 160 and the n-electrode pad 170 are formed of the same material by using the same mask. At this time, the p-electrode pad 160 and the n-electrode pad 170 may be formed of a material selected from Au, Cr-Au alloy, and the like.

On the other hand, FIG. 3 is an enlarged view of portion A of FIG. 1, and will be described in more detail with reference to FIG.

Referring to FIG. 3, the current interruption pattern 140 has inclined planes S at opposite side edges thereof when viewed in section. The inclined plane S is designed for the purpose of improving step coverage with the transparent conductive pattern 150. The slope θ of the inclined plane S is set to be larger than that of the p-type nitride layer 130 It is preferable to have 40 to 80 DEG with respect to the surface. When the inclination (?) Of the inclined plane (S) is less than 40 °, the thickness of the side edges is relatively small in terms of the step coverage characteristic, but the current interruption function at this portion is drastically lowered . Conversely, when the inclination? Of the inclined plane S exceeds 80, the step coverage characteristic with the transparent conductive pattern 150 is drastically lowered, A crack may be generated in the transparent conductive pattern 150 at the conductive pattern 150 and the resistance may increase sharply or if the conductive pattern 150 is severely broken, the conductive conductive pattern 150 may be broken and electrically disconnected.

Fig. 4 is an enlarged view of a portion B in Fig. 1. Fig.

Referring to FIG. 4, the current interruption pattern 140 may include at least two inclined planes S on opposing side edges when viewed in cross section. 4, an example in which the current blocking pattern 140 has two inclined planes S is shown.

It is preferable that the current interruption pattern 140 is formed so that the two inclined surfaces S are formed in a stepped shape. As described above, when the current blocking pattern 140 is designed in a stepped shape having two inclined planes S, the current blocking pattern 140 having the step coverage Lt; RTI ID = 0.0 > characteristic). ≪ / RTI > That is, the two inclined surfaces S serve to gently compensate the step between the current blocking pattern 140 and the transparent conductive pattern 150, and also to improve adhesion characteristics between the current blocking pattern 140 and the transparent conductive pattern 150 And the step coverage characteristic is improved.

The nitride semiconductor light emitting device according to the first embodiment of the present invention may be made of titanium dioxide (TiO 2 ) having a refractive index (n) of 2.0 (at 450 nm) or more instead of silicon oxide (SiO 2 ) having a refractive index of approximately 1.46 ), Tantalum pentoxide (Ta 2 O 5 ), zirconium dioxide (ZrO 2 ), or the like to adjust the refractive index to a similar level between the p-type nitride layer having a refractive index of about 2.4 and the transparent conductive pattern having a refractive index of 1.9 The difference in refractive index between the p-type nitride layer, the current blocking pattern and the transparent conductive pattern interface becomes similar to each other, so that the light incident from the p-type nitride layer is prevented from being reflected and lost due to the difference in refractive index, .

In addition, the nitride semiconductor light emitting device according to the first embodiment of the present invention can improve the step coverage characteristic between the current blocking pattern and the transparent conductive pattern by forming the current blocking pattern so as to have at least one inclined face, It is possible to prevent a defect that the transparent conductive pattern is cut off at the slant surface portion of the transparent conductive film to be electrically disconnected.

5 is a cross-sectional view illustrating a nitride semiconductor light emitting device according to a second embodiment of the present invention.

Referring to FIG. 5, the nitride semiconductor light emitting device 200 according to the second embodiment of the present invention includes an n-type nitride layer 210, an active layer 220, a p-type nitride layer 230, 240, a transparent conductive pattern 250, a p-electrode pad 260, and an n-electrode pad 270.

At this time, the n-type nitride layer 210, the active layer 220 and the p-type nitride layer 230 according to the second embodiment of the present invention are different from the n-type nitride layer (110 of FIG. 1) (120 in Fig. 1) and the p-type nitride layer (130 in Fig. 1), and a duplicate description thereof will be omitted.

The current blocking pattern 240 is disposed on the p-type nitride layer 230 and is formed of a material having a refractive index of 2.0 or more. The current cut-off pattern 240, rather than a refractive index of about 1.46 silicon (SiO 2) oxidation, the refractive index is titanium dioxide having more than 2.0 (TiO 2), tantalum pentoxide (Ta 2 O 5), zirconium dioxide (ZrO 2) And the like. At this time, when the current blocking pattern 240 is formed of a material having a refractive index of 2.0 or more, the brightness can be increased by improving the light extraction efficiency due to the increase of the refractive index. The current blocking pattern 240 preferably has a thickness of 500 to 5000 ANGSTROM, more preferably 1000 to 4000 ANGSTROM.

The transparent conductive pattern 250 is formed to cover the upper side of the p-type nitride layer 230 and the side and upper portions of the current blocking pattern 240. The transparent conductive pattern 250 is formed for the purpose of increasing the current injection area, and is preferably formed of a transparent conductive material in order to prevent the luminance from being adversely affected. That is, the transparent conductive pattern 250 may be formed of indium tin oxide (Indium Tin Oxide, ITO), indium zinc oxide (Indium Zinc Oxide, IZO), at least one material selected from FTO (fluorine doped tin oxide, SnO 2) .

The p-electrode pad 260 is formed on the current blocking pattern 240 and the transparent conductive pattern 250 and is in direct contact with the current blocking pattern 240. At this time, it is preferable that the p-electrode pad 260 has a first area when viewed in a plan view, and the current blocking pattern 240 has a second area wider than the first area. This is because it is advantageous to compensate for the occurrence of light loss due to photon absorption when the current blocking pattern 240 is formed to have a larger area than the p-electrode pad 260. That is, it is preferable that the p-electrode pad 260 is formed so that the entire area overlaps the current blocking pattern 240 when viewed in a plan view. This is because the current blocking pattern 240 should be formed in a larger area than the p-electrode pad 260 to improve the light scattering property.

In particular, the p-electrode pad 260 is electrically and physically connected directly to the current blocking pattern 240. The p-electrode pad 260 is directly connected to the transparent conductive pattern 250 and the current blocking pattern 240, and has a T shape when viewed in cross section. In this case, since the p-electrode pad 260 and the transparent conductive pattern 250 are each made of a metal series, the adhesion between the p-electrode pad 260 and the transparent conductive pattern 250 is poor. However, as in the second embodiment of the present invention, The current blocking layer 260 is electrically and physically directly connected to the current blocking pattern 240 made of at least one oxide material selected from titanium dioxide (TiO 2 ), tantalum pentoxide (Ta 2 O 5 ), and zirconium dioxide (ZrO 2 ) the adhesion property of the p-electrode pad 260 can be improved.

An n-electrode pad 270 is formed in the exposed region of the n-type nitride layer 210. The p-electrode pad 260 and the n-electrode pad 270 may be formed by E-beam deposition, thermal evaporation, sputtering deposition, or the like . The p-electrode pad 260 and the n-electrode pad 270 are formed of the same material by using the same mask. At this time, the p-electrode pad 260 and the n-electrode pad 270 may be formed of a material selected from Au, Cr-Au alloy, and the like.

The nitride semiconductor light emitting device according to the second embodiment of the present invention described above may be formed of titanium dioxide (TiO 2 ), tantalum pentoxide (Ta 2 O 5 ), zirconium dioxide (ZrO 2 ) having a refractive index of 2.0 or more, 2 ) or the like, it is possible to maximize the light extraction efficiency by improving the light scattering characteristic, and by forming the current interruption pattern so as to have at least one inclined surface, The step coverage characteristic can be improved.

In the nitride semiconductor light emitting device according to the second embodiment of the present invention, the p-electrode pad of the metal type is formed of one kind selected from titanium dioxide (TiO 2 ), tantalum pentoxide (Ta 2 O 5 ), zirconium dioxide (ZrO 2 ) By electrically and physically connecting to the current interruption pattern made of the above-mentioned oxide material, the adhesion property of the p-electrode pad can be improved.

Although the nitride semiconductor light emitting device in which an n-type nitride layer, an active layer, a p-type nitride layer, a current blocking pattern, a transparent conductive pattern, a p-electrode pad, and an n-electrode pad are sequentially stacked has been described in the present invention, And it may be obvious that the n-side and the p-side may be stacked in reverse order.

Example

Hereinafter, the configuration and operation of the present invention will be described in more detail with reference to preferred embodiments of the present invention. It is to be understood, however, that the same is by way of illustration and example only and is not to be construed in a limiting sense.

The contents not described here are sufficiently technically inferior to those skilled in the art, and a description thereof will be omitted.

1. Specimen Manufacturing

Example 1

An n-type nitride layer, an active layer and a p-type nitride layer were sequentially formed on a sapphire substrate having a thickness of 200 mu m. Then, TiO 2 was deposited on the p-type nitride layer to a thickness of 1000 Å to form a current interruption pattern. ITO (Indium Tin Oxide) was deposited to a thickness of 1000 Å and patterned to form a transparent conductive pattern. Thereafter, the p-type nitride layer, the active layer and the n-type nitride layer were sequentially subjected to mesa etching to expose a part of the n-type nitride layer, and then a p-electrode pad and an n-electrode pad were formed.

Example 2

A specimen was prepared in the same manner as in Example 1, except that TiO 2 was deposited to a thickness of 2000 Å to form a current interruption pattern.

Example 3

A sample was prepared in the same manner as in Example 1, except that TiO 2 was deposited to a thickness of 3000 Å to form a current interruption pattern.

Example 4

A TiO 2 layer was deposited to a thickness of 4000 Å to form a current interruption pattern. A sample was prepared in the same manner as in Example 1.

Example 5

A sample was prepared in the same manner as in Example 1, except that Ta 2 O 5 was deposited to a thickness of 1000 Å to form a current interruption pattern.

Example 6

A sample was prepared in the same manner as in Example 1, except that Ta 2 O 5 was deposited to a thickness of 2000 Å to form a current interruption pattern.

Example 7

A sample was prepared in the same manner as in Example 1 except that Ta 2 O 5 was deposited to a thickness of 3000 Å to form a current interruption pattern.

Example 8

A sample was prepared in the same manner as in Example 1 except that a current interruption pattern was formed by depositing Ta 2 O 5 to a thickness of 4000 Å.

Comparative Example 1

A specimen was prepared in the same manner as in Example 1, except that SiO 2 was deposited to a thickness of 4000 Å to form a current interruption pattern.

2. Evaluation of transmittance

Table 1 shows the results of simulation of GaN layer / current blocking pattern / transparent conductive pattern / (epoxy resin) transmittance at a wavelength of 450 nm according to the specimens for Examples 1 to 8 and Comparative Example 1. Table 1 shows the comparison between the state before sealing with an epoxy resin and the result after sealing with an epoxy resin, respectively.

[Table 1]

Figure pat00001

Referring to Table 1, it can be seen that in Examples 1 to 8, the transmittance was 92% or more at a wavelength of 450 nm regardless of sealing with an epoxy resin. Particularly, in the case of Examples 1 to 8, it can be confirmed that the transmittance at 450 nm was measured to be 96% or more when not sealed with an epoxy resin. On the other hand, in the case of Comparative Example 1, it can be confirmed that the transmittance at a wavelength of 450 nm was measured to be 85% or less irrespective of sealing with an epoxy resin.

FIGS. 6 and 7 are graphs showing the results of measurement of the transmittance of each wavelength according to Examples 1 to 8 and Comparative Example 1. FIG. Specifically, FIG. 6 shows the results of measurement after sealing with an epoxy resin, and FIG. 7 shows the results of measurement before sealing with an epoxy resin.

As shown in FIG. 6, it can be seen that the specimens according to Examples 1 to 8 exceeded the transmittance of 90% in the overall wavelength range even after sealing with epoxy resin. On the other hand, in the case of the test piece according to Comparative Example 1, it can be confirmed that even after sealing with the epoxy resin, the transmittance of each wavelength band shows a large deviation.

In addition, as shown in Fig. 7, it can be confirmed that in Examples 1 to 8 corresponding to the state before sealing the epoxy resin, the transmissivity was about 90% or more regardless of the wavelength band. On the other hand, in Comparative Example 1, which corresponds to the state before sealing the epoxy resin, the transmittance at 450 nm is only 69.6% as well as the transmittance is significantly varied at each wavelength band.

Although the preferred embodiments of the present invention have been disclosed for illustrative purposes, those skilled in the art will appreciate that various modifications, additions and substitutions are possible, without departing from the scope and spirit of the invention as disclosed in the accompanying claims. These changes and modifications may be made without departing from the scope of the present invention. Accordingly, the scope of the present invention should be determined by the following claims.

100, 200: a nitride semiconductor light emitting device 110, 210: an n-type nitride layer
120, 220: active layer 130, 230: p-type nitride layer
140, 240: current interruption pattern 150, 250: transparent conductive pattern
160, 260: p-electrode pad 170, 270: n-electrode pad
101, 201: substrate S: sloped surface
θ: slope of the slope

Claims (13)

an n-type nitride layer;
An active layer formed on the n-type nitride layer;
A p-type nitride layer formed on the active layer;
A current blocking pattern formed on the p-type nitride layer and formed of a material having a refractive index (n) of 2.0 or more;
A transparent conductive pattern formed to cover the p-type nitride layer and the current blocking pattern;
A p-electrode pad formed on the transparent conductive pattern and disposed at a position corresponding to the current blocking pattern; And
And an n-electrode pad formed in an exposed region of the n-type nitride layer.
The method according to claim 1,
The current blocking pattern
Wherein at least one of titanium dioxide (TiO 2 ), tantalum pentoxide (Ta 2 O 5 ), and zirconium dioxide (ZrO 2 ) is formed.
The method according to claim 1,
The current blocking pattern
And a thickness of 500 to 5000 ANGSTROM.
The method according to claim 1,
The current blocking pattern
And at least one inclined surface is provided on the edge of the nitride semiconductor light emitting device.
5. The method of claim 4,
The current blocking pattern
And the inclined surface has a slope of 40 to 80 DEG with respect to a surface of the p-type nitride layer.
5. The method of claim 4,
The current blocking pattern
Wherein at least two inclined surfaces are formed in a stepped shape.
The method according to claim 1,
The transparent conductive pattern
Wherein the first electrode is formed of at least one material selected from indium tin oxide (ITO), indium zinc oxide (IZO), and fluorine doped tin oxide (FTO).
an n-type nitride layer;
An active layer formed on the n-type nitride layer;
A p-type nitride layer formed on the active layer;
A current blocking pattern formed on the p-type nitride layer and formed of a material having a refractive index (n) of 2.0 or more;
A transparent conductive pattern formed to cover the upper side of the p-type nitride layer and the side and upper portions of the current blocking pattern;
A p-electrode pad formed on the current blocking pattern and the transparent conductive pattern, the p-electrode pad being in direct contact with the current blocking pattern; And
And an n-electrode pad formed in an exposed region of the n-type nitride layer.
9. The method of claim 8,
The current blocking pattern
Wherein the nitride semiconductor light emitting device is formed of at least one of titanium dioxide (TiO 2 ), tantalum pentoxide (Ta 2 O 5 ), and zirconium dioxide (ZrO 2 ), and has a thickness of 500 to 5000 Å.
9. The method of claim 8,
The current blocking pattern
And at least one inclined surface is provided on the edge of the nitride semiconductor light emitting device.
9. The method of claim 8,
The p-electrode pad
And the current blocking pattern has a second area larger than the first area when viewed in a plan view.
9. The method of claim 8,
The p-electrode pad
And the total area of the nitride semiconductor light emitting device is formed so as to overlap with the current blocking pattern when viewed in a plan view.
9. The method of claim 8,
The p-electrode pad
Wherein the nitride semiconductor light-emitting device has a T-shaped cross section.
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