KR20140098897A - The atomic cell using radiation shielding material - Google Patents

The atomic cell using radiation shielding material Download PDF

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Publication number
KR20140098897A
KR20140098897A KR1020130010872A KR20130010872A KR20140098897A KR 20140098897 A KR20140098897 A KR 20140098897A KR 1020130010872 A KR1020130010872 A KR 1020130010872A KR 20130010872 A KR20130010872 A KR 20130010872A KR 20140098897 A KR20140098897 A KR 20140098897A
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KR
South Korea
Prior art keywords
radiation
radiation source
semiconductor layer
shielding material
type semiconductor
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Application number
KR1020130010872A
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Korean (ko)
Inventor
박창제
이병철
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한국원자력연구원
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Priority to KR1020130010872A priority Critical patent/KR20140098897A/en
Publication of KR20140098897A publication Critical patent/KR20140098897A/en

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    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21F—PROTECTION AGAINST X-RADIATION, GAMMA RADIATION, CORPUSCULAR RADIATION OR PARTICLE BOMBARDMENT; TREATING RADIOACTIVELY CONTAMINATED MATERIAL; DECONTAMINATION ARRANGEMENTS THEREFOR
    • G21F1/00—Shielding characterised by the composition of the materials
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21H—OBTAINING ENERGY FROM RADIOACTIVE SOURCES; APPLICATIONS OF RADIATION FROM RADIOACTIVE SOURCES, NOT OTHERWISE PROVIDED FOR; UTILISING COSMIC RADIATION
    • G21H1/00—Arrangements for obtaining electrical energy from radioactive sources, e.g. from radioactive isotopes, nuclear or atomic batteries
    • G21H1/04—Cells using secondary emission induced by alpha radiation, beta radiation, or gamma radiation

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a nuclear fuel cell, and more particularly, to a nuclear fuel cell capable of being semi-permanently used by using a radioactive source having a relatively long half-life and generating electricity by a semiconductor system. A nuclear power cell using a radiation shielding material includes a radiation source for emitting gamma rays, a first shielding material provided at one side of the radiation source for generating electricity by interacting with the gamma rays, and a second shielding material provided at the other side of the radiation source, And a second shielding member for generating electricity. With such a configuration, the nuclear power cell can shield the radiation irradiated from the radiation source through the semiconductor device and generate electricity using the radiation. In addition, by miniaturizing the nuclear power cell, it can be used semi-permanently as an energy source of a compact electrical apparatus.

Description

[0001] The present invention relates to a radiation shielding material,

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a nuclear fuel cell, and more particularly, to a nuclear fuel cell capable of being semi-permanently used by using a radioactive source having a relatively long half-life and generating electricity by a semiconductor system.

Long-term, long-life nuclear power cells are capable of long-term supply of energy without the need for maintenance over a long period of time. Therefore, research and development are underway for a long time because of availability for space, military and medical applications.

 These nuclear power cells are similar in principle to solar cells. In solar cells, sunlight is used as an energy source while nuclear power cells use radiation as an energy source.

 Specifically, solar cells generate electricity by using sunlight. They convert light energy directly into electrical energy by using photovoltaic effect, while nuclear power cells use a similar principle to solar cells, It transforms energy into electrical energy.

Here, a radioactive isotope that generates the above radiation energy is used, and the radioactive isotope is an element that emits radiation having specific energy and collapses into a stable isotope. In addition, most radioisotope decay methods emit energy as alpha, beta, or gamma rays, resulting in stable isotopes. The amount of radioactive isotopes is expressed as the radioactive intensity, ie the number of collapses that occur in unit time. The time it takes for a radioactive element to decay to the first half of its volume is called the half-life period, which depends on the radioactive isotope. Depending on the half-life period, the specific radioactive isotope is used as the energy source And has applied various industrial applications.

Particularly, in recent years, a battery technology for generating electricity by irradiating a semiconductor with radiation has been developed.

Among these batteries, Korean Patent No. 10-0926598 discloses a semiconductor nuclear power battery using a solid radiation source.

According to embodiments of the present invention, a nuclear power cell is provided to shield a radiation irradiated from a radiation source through a semiconductor device and to generate electricity using radiation.

It is another object of the present invention to provide a nuclear fuel cell using a radiation shielding material that supplies electric energy semi-permanently by using the nuclear fuel cell as an energy source of a compact electrical apparatus by miniaturizing the nuclear fuel cell.

The atomic force battery using the radiation shielding material according to the embodiments of the present invention may include a radiation source for emitting gamma rays, a first shielding material provided on one side of the radiation source for generating electricity by interacting with the gamma rays, And a second shielding member which interacts with the gamma rays to generate electricity.

According to one embodiment, the first and second shielding materials shield the gamma rays emitted from the radiation source.

According to one embodiment, the first and second shielding materials are semiconductor layers, and the n-type semiconductor layer and the p-type semiconductor layer are bonded to each other.

According to an exemplary embodiment of the present invention, a first electrode electrically connected to the n-type semiconductor layer is provided, and a second electrode electrically connected to the p-type semiconductor layer is provided.

According to an embodiment, a plurality of the nuclear power cells may have a serial connection structure or a parallel connection structure.

According to one embodiment, the radiation source may emit an alpha ray (beta ray) or a beta ray (beta ray) instead of the gamma ray.

With such a configuration, the nuclear power cell can shield the radiation irradiated from the radiation source through the semiconductor device and generate electricity using the radiation. In addition, by miniaturizing the nuclear power cell, it can be used semi-permanently as an energy source of a compact electrical apparatus.

As described above, according to the embodiments of the present invention, the nuclear power cell can shield the radiation irradiated from the radiation source through the semiconductor device and generate electricity using the radiation.

In addition, by miniaturizing the nuclear power cell, it can be used semi-permanently as an energy source of a compact electrical apparatus.

1 is a cross-sectional view illustrating a nuclear fuel cell using a radiation shielding material according to an embodiment of the present invention.
2 is a cross-sectional view illustrating a semiconductor device which is a shielding material of a nuclear power cell according to an embodiment of the present invention.
3 is a cross-sectional view illustrating first and second electrodes of a nuclear power cell according to an embodiment of the present invention.
FIG. 4 is a configuration diagram illustrating a series connection and a parallel connection of a nuclear power cell according to an embodiment of the present invention.

Hereinafter, a nuclear power battery according to an embodiment of the present invention will be described in detail with reference to FIGS. 1 to 3. FIG.

FIG. 1 is a cross-sectional view illustrating a nuclear fuel cell using a radiation shielding material according to an embodiment of the present invention. FIG. 2 is a cross-sectional view illustrating a semiconductor device, which is a shielding material of a nuclear fuel cell according to an embodiment of the present invention. 1 is a cross-sectional view illustrating first and second electrodes of a nuclear power cell according to an embodiment of the present invention;

1 to 3, a nuclear power cell 100 using a radiation shielding material includes a radiation source 10 that emits a gamma ray, a radiation source 10 that is disposed at one side of the radiation source 10, A first shielding member 20 and a second shielding member 30 disposed on the other side of the radiation source 10 and generating electricity by interacting with the gamma rays.

The radiation source 10 uses a radioactive isotope that emits an alpha ray, a beta ray (beta ray), or a gamma ray (gamma ray) which is easily absorbed by itself. Here, the radiation source 10 may generate a relatively large electromotive force by using gamma rays whose energy density is relatively larger than the alpha ray and the beta ray. In addition, by using a radioactive isotope having a long half-life period as the radiation source 10, it is possible to have a semi-permanent long-term atomic battery 100.

The radiation source 10 is embedded between the first and second shielding materials 20 and 30. The gamma ray emitted from the radiation source 10 is a high energy electromagnetic wave, (20, 30). Here, 238 Pu, 244 Cm or 90 Sr may be used as the radiation source 10.

The first shielding material 20 is a shielding material for shielding gamma rays and is a generally used silicon semiconductor layer. In particular, a monocrystalline silicon or a polycrystalline silicon wafer of a crystalline silicon semiconductor can be used, and the monocrystalline silicon or polycrystalline silicon wafer can be converted It is efficient and reliable.

When the first shielding material 20 is provided on one side of the radiation source 10, the p-type semiconductor layer 21 and the n-type semiconductor layer 22 are bonded to each other, It is possible to generate electromotive force by interacting with the gamma rays generated from the source 10.

For example, the first shielding material 20 has a pn junction structure in which one surface of the n-type semiconductor layer 22 is in contact with one surface of the radiation source 10, Gamma rays to generate an electromotive force. More specifically, when the gamma rays radiated by the radiation source 10 are irradiated to the n-type semiconductor layer 22 of the first shielding material 20, the holes of the n- type semiconductor layer 22 type semiconductor layer 21, and electrons of the p-type semiconductor layer 21 move to the n - type semiconductor layer 22. [ Therefore, electrons are collected in the n-type semiconductor layer 22 and holes are collected in the p-type semiconductor layer 21 to generate a potential. An electromotive force is generated by this potential difference, and the generated electromotive force forms a load on the electrode If the load is connected, current can flow.

The second shielding material 30 is a shielding material for shielding gamma rays and is a generally used silicon semiconductor layer. In particular, a monocrystalline silicon or a polycrystalline silicon wafer of a crystalline silicon semiconductor can be used, and the monocrystalline silicon or polycrystalline silicon wafer can be converted It is efficient and reliable.

When the second shielding material 30 is provided on one side of the radiation source 10, the p-type semiconductor layer 31 and the n-type semiconductor layer 32 are bonded to each other, It is possible to generate electromotive force by interacting with the gamma rays generated from the source 10.

For example, the second shielding material 30 has a pn junction structure in which one surface of the n-type semiconductor layer 32 is in contact with one surface of the radiation source 10, Gamma rays to generate an electromotive force. More specifically, when the gamma rays radiated from the radiation source 10 are irradiated to the n-type semiconductor layer 32 of the second shielding material 30, the holes of the n-type semiconductor layer 32 type semiconductor layer 31 and electrons of the p-type semiconductor layer 31 move to the n - -type semiconductor layer 32. Therefore, the electrons are collected in the n-type semiconductor layer 32 and the holes are collected in the p-type semiconductor layer 31 to generate a potential. An electromotive force is generated by this potential difference and the generated electromotive force forms a load on the electrode When the load is connected, a current can flow.

The first electrode 41 and the second electrode 42 electrically connect the first shielding member 20 and the second shielding member 30 to each other.

The first electrode 41 is an electrode for electrically connecting the n-type semiconductor layer 22 of the first shielding material 20 and the n-type semiconductor layer 32 of the second shielding material 30, It is used by being coated with a high metal such as Au or the like and can act as a cathode.

The second electrode 42 is an electrode for electrically connecting the p-type semiconductor layer of the first shielding material 20 and the p-type semiconductor layer of the second shielding material 30, and may be formed of a metal having high electrical conductivity, Au, etc., and can act as an anode.

Therefore, a plurality of electron-hole pairs are generated by the gamma rays of the radiation source 10. The generated electron-hole pairs move electrons to the n < - > -type semiconductor layers 22 and 32 due to the electric field generated at the pn junction, and the holes move to the p-type semiconductor layers 21 and 31, And collected on the electrodes 41 and 42. The charge collected at each of the electrodes 41 and 42 may cause a current to flow in the load when a load is connected to the external circuit.

4 is a block diagram illustrating a series connection and a parallel connection of a nuclear power cell according to an embodiment of the present invention.

Referring to FIG. 4, FIG. 4 (a) shows a series connection structure in which a cathode of a plurality of nuclear power cells 100 is connected to a cathode, and a cathode is connected to an anode. This series connection structure can increase the voltage from the battery. 4 (b) shows a parallel connection structure in which the anode of the plurality of nuclear power cells 100 is connected to the anode, and the cathode to the cathode are connected to each other. This parallel connection structure can increase the current drawn from the cell.

With such a configuration, the nuclear power cell can shield the radiation irradiated from the radiation source through the semiconductor device and generate electricity using the radiation. In addition, by miniaturizing the nuclear power cell, it can be used semi-permanently as an energy source of a compact electrical apparatus.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments. The present invention is not limited to the above-described embodiments, and various modifications and changes may be made thereto by those skilled in the art to which the present invention belongs. Therefore, the spirit of the present invention should not be construed as being limited to the above-described embodiments, and all of the equivalents or equivalents of the claims, as well as the following claims, are included in the scope of the present invention.

10: radiation source 31: p-type semiconductor layer
20: first shielding material 32: n- type semiconductor layer
21: p-type semiconductor layer 41: first electrode
22: n- type semiconductor layer 42: second electrode
30: Second shielding material 100: Nuclear power cell

Claims (6)

A radiation source emitting gamma rays;
A first shielding member provided at one side of the radiation source and generating electricity by interacting with the gamma rays; And
A second shielding member provided on the other side of the radiation source and generating electricity by interacting with the gamma rays;
Wherein the radiation shielding material comprises a radiation shielding material. The method according to claim 1,
Wherein the first and second shielding materials shield the gamma rays emitted from the radiation source. The method according to claim 1,
Wherein the first and second shielding materials are semiconductor layers, and the n-type semiconductor layer and the p-type semiconductor layer are bonded to each other. 3. The method of claim 2,
A first electrode electrically connected to the n-type semiconductor layer; and a second electrode electrically connected to the p-type semiconductor layer. The method according to claim 1,
Wherein a plurality of the nuclear power cells have a serial connection structure or a parallel connection structure. The method according to claim 1,
Wherein the radiation source emits an alpha ray or a beta ray instead of the gamma ray.
KR1020130010872A 2013-01-31 2013-01-31 The atomic cell using radiation shielding material KR20140098897A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9685249B2 (en) 2014-12-22 2017-06-20 Korea Atomic Energy Research Institute Beta voltaic battery and method of preparing the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9685249B2 (en) 2014-12-22 2017-06-20 Korea Atomic Energy Research Institute Beta voltaic battery and method of preparing the same

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