KR20140082638A - Cartridge reactor for production of materials via the chemical vapor deposition process - Google Patents
Cartridge reactor for production of materials via the chemical vapor deposition process Download PDFInfo
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- KR20140082638A KR20140082638A KR1020147002798A KR20147002798A KR20140082638A KR 20140082638 A KR20140082638 A KR 20140082638A KR 1020147002798 A KR1020147002798 A KR 1020147002798A KR 20147002798 A KR20147002798 A KR 20147002798A KR 20140082638 A KR20140082638 A KR 20140082638A
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- container
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- deposition surface
- heated
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Silicon Compounds (AREA)
- Chemical Vapour Deposition (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The present invention overcomes the limitations of the Siemens reactor by allowing the deposition reaction to occur in a sealed crucible rather than in the entire cavity of a water-cooled reactor. The crucible itself is disposed within the reactor of the cartridge, which may have a heat shield (13) between the crucible and the reactor wall to significantly reduce radiant energy losses. Additionally, the ratio of the deposition surface area to the cavity volume in the crucible is much higher than the ratio of the rod deposition surface area to the total cavity volume in the Siemens reactor, resulting in a much higher contact ratio of gas molecules to the deposition surface. This results in a much higher actual conversion rate to the material on the deposition surface of the material in the gas.
Description
This patent application is a continuation-in-part of US patent application Ser. No. 12 / 597,151, entitled "Deposition of High-purity Silicon through High Area Gas-Solid or Gas-Liquid Interfaces and Recovering Through Liquids," filed October 22, 151 patent application ") is incorporated by reference in its entirety.
This application is also incorporated by reference in its entirety as co-pending application entitled " Deposition Cartridge for the Production of Materials via Chemical Vapor Deposition Process " filed concurrently with this application (to be added when the application number is known) . The present application is also related to US patent application Ser. No. 61504148 ("'148 Patented"), and U.S. Provisional Patent Application Ser. Filed on July 1, 2006, entitled " A cartridge reactor for the production of high purity amorphous and crystalline silicon and other materials ", filed on Jul. 1, Are incorporated by reference in their entirety. In the '151 patent application, the term "deposition plate" is defined as the surface on which silicon is deposited, but when describing actual physical components in the present patent application for the purpose of improved clarity, "Deposition plate" is defined as an actual physical flat plate (an object with a significantly larger surface area on its side with respect to its edges) on which material is deposited, preferably on one or more edges as well as on one or more edges . The sides and edges of the deposition plate are therefore the deposition surface. The term "deposition cartridge" is defined as a combination of a distribution rod and a solid deposition plate, or simply as a meander pattern deposition plate, any of which may include an insulating layer or a spacer. The term "Siemens reactor" is defined as the deposition reactor originally designed to utilize a seed rod.
The '151 patent application describes the limitations of the Siemens reactor, including:
1. Low average surface area of the polysilicon rod resulting in low volumetric deposition rates and hence low Siemens reactor productivity (as measured by a predetermined time period per year, typically the mass of polysilicon produced over metric tons) .
2. A low percentage of the surface area to volume of the polysilicon rod, resulting in high energy consumption to maintain the surface temperature required to achieve deposition during the extended time period required to achieve a meaningful deposition volume.
3. Labor-intensive and pollution-prone characteristics of the harvesting process.
The present invention described in the '151 patent application overcomes the first and second limitations by providing a high area electrically heated deposition plate. Silicon is deposited on this plate in high volume ratios through CVD processing, and then resealed by further heating of the plate. The additional heating allows a very thin layer of polysilicon to be liquefied at the plate interface and the solid crust of deposited polysilicon can be pulled from the plate mechanically or by gravity. The use of large size plates in Siemens reactors increases reactor productivity with respect to using conventional seed rods, while the use of small size plates results in the same productivity with respect to using seed rods While reducing the energy consumption of the reactor. However, additional limitations of the Siemens reactor remain, including, but not limited to, the following:
1. From the rod, in addition to the rod, a high radiant energy loss to the reactor wall to be cooled to prevent the deposition of polysilicon on the wall
2. Low contact percentage of the deposition gas molecules to the deposition surface area due to the low ratio of the deposition surface area to the overall cavity volume of the reactor. The low actual conversion rate of silicon in the gas to the silicon on the rod, which is related to the theoretical conversion rate, controlled by the reaction equilibrium, is the result of a low contact percentage.
The present invention overcomes the limitations of the Siemens reactor described above by allowing the deposition reaction to occur in a sealed crucible rather than in the entire cavity of a water-cooled reactor.
Deposition at the inner wall of the reactor is undesirable because it results in loss of material to be produced, while deposition at the inner wall of the crucible is actually desirable because it increases the volume deposition rate due to the addition of deposition surface area. The crucible itself is disposed within the cartridge reactor, which can have a heat shield between the crucible and the reactor wall to significantly reduce radiant energy losses. Typically, 60-70% of the energy used by the Siemens reactor is their loss to the shieldless water-cooled wall.
Additionally, the ratio of the deposition surface area to the cavity volume in the crucible is much higher than the ratio of the total cavity volume to the load deposition surface area in the Siemens reactor, resulting in a higher contact percentage of gas molecules with the deposition surface. This results in a very high actual conversion rate of the material in the gas to the material on the deposition surface.
Figure 1 shows a front view of one preferred embodiment of the main components of a cartridge reactor.
Figure 2 shows a top view of one preferred embodiment of the main components of the cartridge reactor.
Figure 3 shows a perspective view of one preferred embodiment of a deposition cartridge for a cartridge reactor.
Figure 4 shows a front view of one preferred embodiment of a cartridge reactor in which the lower assembly is lowered and the crucible is loaded.
Figure 5 shows a front view of one preferred embodiment of a cartridge reactor in which the lower assembly rises and the reactor is pressurized with an inert gas.
Figure 6 shows a front view of one preferred embodiment of a cartridge reactor in which the crucible is raised and the deposition cartridge is preheated.
Figure 7 shows a front view of one preferred embodiment of a cartridge reactor during a deposition sequence.
Figure 8 shows a front view of one preferred embodiment of a cartridge reactor during directional solidification into an inert gas in the reactor
Figure 9 shows a front view of one preferred embodiment of a cartridge reactor during cooling and edge purging.
Figure 10 shows a front view of one preferred embodiment of a cartridge reactor in which the lower assembly is lowered and the crucible is unloaded.
Figure 11 shows a side elevational view of one preferred embodiment of a reactor top assembly.
Figure 12 shows a front view of one preferred embodiment of a reactor top assembly.
Figure 13 shows a top view (as viewed) of one preferred embodiment of the reactor top assembly.
Figure 14 shows a side elevational view of one preferred embodiment of a crucible during deposition showing a gas flow pattern.
Figure 15 shows a top view of one preferred embodiment of a crucible after deposition showing a material crust.
The main components of one preferred embodiment of the
2, the
Figure 3 shows a perspective view of one preferred embodiment of an array of
This preferred embodiment of the
1. The crucible-loading phase is shown in FIG. Preferably, the reactor
2. An inert gas purge step is shown in FIG. Preferably, the reactor
3. The preheating step is shown in Fig. Preferably, the
4. The deposition sequence step is shown in Fig. Preferably, the deposition gas mixture, which is preferably trichlorosilane and hydrogen or monosilane when the deposition material is polysilicon, is pumped into the
Alternatively, in this preferred embodiment, if there is a leak in the
5. The crystallization step is shown in Fig. Preferably, the
However, in another preferred embodiment, if the flat section geometry is circular and a rotating puller rod is introduced into the
6. The cooling and air purging steps are shown in Fig. 9, wherein the vacuum is replaced by a circulating inert gas, preferably argon, for convective cooling. After sufficient cooling of the crucible to facilitate subsequent handling, Is purged with air in preparation for the unsealing and descent of the reactor lower assembly (6). In the preferred embodiment in which the crystallization step is omitted, cooling of the
7. The crucible-unloading step is shown in Fig. Preferably, the reactor lower assembly is opened and lowered, and the
A feature of the preferred embodiment of the
In this preferred embodiment, the vent gas continues to move upwardly and is removed through the vent
Bent gas is collected in a single stream from the vent gas outlet plurality of vent gas outlet annulus (25) and exits the reactor top assembly through vent gas outlet (22). On the other hand, the cooling water heated in the vent gas after-
11 and 13 show one preferred embodiment of the
A preferred embodiment of the
The preferred benefits of a cartridge reactor over a Siemens reactor are as follows:
1. A faster volumetric deposition rate due to the higher surface area for deposition.
2. A deposition gas to the material on the deposition surface resulting from more complete contact of the deposition surface and the deposition gas mixture possible by a combination of the deposition surface area relative to the deposition gas mixture receiving volume and the deposition cartridge geometry and the gas inlet nozzle geometry The high actual conversion rate of the material in the mixture.
3. Energy conservation because it minimizes radiant heat losses from the deposition cartridge geometry. Most of the radiant heat emitted from the heated deposition surface is absorbed by the adjacent deposition surface.
4. Energy savings due to minimized radioactive, conductive, convective heat loss to the water-cooled reactor walls. Since the deposition takes place in the sealed crucible, the reactor wall outside the crucible can be blocked by the
5. Energy saving due to melting rather than the ambient temperature for crystallization of the material from the deposition temperature. Whether crystallization occurs in the cartridge reactor or in a separate crystallization apparatus, the material already exists in the crucible, need not be treated directly, and therefore does not need to be cooled to ambient temperature.
6. Removal of actions for decontamination of materials from handling and reduction of contamination from handling such as acid etching.
7. Removal of movement for pushing material into a chuck of manageable size for loading into the crucible.
8. Faster, higher quality crystallization due to controlled recovery of the deposition cartridge from molten silicon.
9. A more complete conversion of the deposition gas mixture into the vent gas, resulting in a reduction in vent gas for downstream processing in the cartridge reactor.
10. A simplified electrical system comprising a single electrode pair for connecting deposition cartridges in parallel or in series, as compared to individual electrode pairs for each rod pair in a Siemens reactor.
11. Increased safety due to the combustible deposition gas mixture sealed inside the additional wall of the crucible and the inert gas in the reactor cavity maintained at a somewhat higher pressure than the deposition gas mixture in the crucible.
12. Easily scalable design. Simply increasing the planar cross-section of the cartridge reactor to include a large number of deposition gas mixture inlet nozzles and a large number of long deposition cartridges and increasing the height of the deposition cartridge will increase the production capacity of the cartridge reactor without most of the re- Can be significantly increased. An easily scaled, directional solidification, which may be an attempt on an external heating furnace of the molten material, can be achieved through heating and controlled recovery of the deposition cartridge from the molten silicon.
Claims (2)
a. Providing a container that can be sealed from a surrounding free space;
b. Providing a deposition surface that can be heated and placed in a container;
c. Providing a flow of the deposition gas mixture into the container while preventing the flow of the deposition gas mixture in the free space surrounding the container;
d. Providing a flow of vent gas to the exterior of the container while preventing the flow of vent gas in the free space surrounding the container;
e. Placing the deposition surface within the container, sealing the container from the surrounding free space, heating the deposition surface, allowing the deposition gas mixture to flow into the container, and allowing the vent gas to flow out of the container, So as to substantially fill the void volume of the container;
f. Stopping and purging the flow of the deposition gas mixture into the container and continuing the production cycle in one of the following ways:
i. In the case where the deposition surface is made of the same material as the laminate material, the container is simply opened and the container re-covered with a substantially filled crust of material for further processing,
ii. When the deposition surface is made from a material to be produced and a material or combination of materials having a higher melting temperature than the solid product,
1. further heating the deposition surface to a temperature of or above the melting temperature of the material so that the thin layer of material at the deposition surface interface is liquefied to separate the crust of the material,
2. Open the container, isolate the heated deposition surface from the separated crust in the container,
3. It is required to re-cover the container which is almost filled with the crust of material for further processing,
iii. When the deposition surface is made of a material or combination of materials having a higher melting temperature than the material to be produced and the molten product,
1. The deposition surface is further heated to or above the melting temperature of the material, and the deposition surface is maintained in contact with the material until the material is melted.
2. Open the container, isolate the heated deposition surface from the molten material in the container,
3. It is required to re-cover a container that is almost filled with molten material for further processing,
iv. When the deposition surface is made of a material or combination of materials having a melting temperature higher than the material to be produced and the crystalline product,
1. further heating the deposition surface to a temperature at or above the melting temperature of the material, contacting the material until the material is melted to maintain the deposition surface,
2. Open the container and isolate the heated deposition surface from the molten material at a controlled rate so that specific cooling and crystallization of the material occurs,
3. A method of manufacturing a material through a chemical vapor deposition process requiring re-covering of a container substantially filled with a crystallization material for further processing.
a. Providing a reactor that can be sealed from the surrounding free space;
b. Providing a container which can be placed in the reactor and which can be sealed from the rest of the free space inside the reactor;
c. Providing a deposition surface that can be heated and positioned within the container;
d. Providing a flow of a deposition gas mixture from the exterior of the reactor to the interior of the container in the reactor while preventing the flow of the deposition gas mixture from the rest of the free space inside the reactor;
e. Providing a flow of vent gas from the interior of the container within the reactor to the exterior of the reactor while preventing the flow of vent gas from the rest of the free space inside the reactor;
f. Placing the container in the reactor and sealing the reactor from the surrounding free space;
g. Placing the deposition surface inside the reactor and sealing the container from the rest of the free space inside the reactor;
h. Heating the deposition surface to allow the flow of the deposition gas mixture into the container and allowing the flow of the vent gas to the exterior of the container so that a crust of material is deposited over the deposition surface to substantially fill the void volume of the container;
i. Stopping and purging the flow of the deposition gas mixture into the container and continuing the production cycle in one of the following ways:
i. If the deposition surface is made of the same material as the deposition material, simply open the container, unseal the reactor, re-cover the container which is nearly filled with the crust of material for further processing,
ii. When the deposition surface is made of a material to be produced and a material or combination of materials having a higher melting temperature than the solid product,
1. The deposition surface is further heated to a temperature at or above the melting temperature of the material so that the thin layer of material at the deposition surface interface is liquefied and the crust of the material is separated,
2. Open the container, isolate the heated deposition surface from the crust of discrete material in the container,
3. It is required to open the reactor and re-cover the container which is almost filled with the crust of material for further processing,
iii. When the deposition surface is made of a material or combination of materials having a higher melting temperature than the material to be produced and the molten product,
1. further heating the deposition surface to a temperature at or above the melting temperature of the material, contacting the material until the material is melted to maintain the deposition surface,
2. Open the container, isolate the heated deposition surface from the molten material in the container,
3. It is required to open the reactor and re-cover the container which is almost filled with molten material for further processing,
iv. When the deposition surface is made of a material or combination of materials having a higher melting temperature than the material to be produced and the crystalline product,
1. The deposition surface is further heated to a temperature at or above the melting temperature of the material so that the thin layer of material at the deposition surface interface is liquefied and the crust of the material is separated,
2. Melt the material in one of the following ways,
a. By bringing the material and the heated plate into contact with each other until the melting of the material, melting by the heated deposition plate
b. The following steps:
i. Opening the container, isolating the heated deposition surface from the crust of discrete material in the container,
ii. By melting the material in a container that is external to the container but has a heater internal to the reactor, it is possible to melt the material by a heater external to the container but internal to the reactor,
3. Crystallize the molten material by one of the following methods,
a. The container is opened and the heated deposition surface is isolated from the molten material at a controlled rate to cause specific cooling and crystallization of the material to occur,
b. Providing heating from the heater external to the container but internal to the reactor at a controlled rate such that specific cooling and crystallization of the material occurs,
c. It is external to the container but provides an internal cooler in the reactor and provides cooling from such a cooler at a controlled rate such that specific cooling and crystallization of the material occurs,
d. Providing a rotary pulldower rod that is dewatered into the molten material and pulled from the molten material at a controlled rate to cause crystallization of the material,
4. A method and a reactor for producing a material through a chemical vapor deposition process in which it is required to open the reactor and re-cover the container which is almost filled with crystallization material for further processing.
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201161504148P | 2011-07-01 | 2011-07-01 | |
US201161504145P | 2011-07-01 | 2011-07-01 | |
US61/504,145 | 2011-07-01 | ||
US61/504,148 | 2011-07-01 | ||
PCT/US2012/045177 WO2013006523A1 (en) | 2011-07-01 | 2012-07-01 | Cartridge reactor for production of materials via the chemical vapor deposition process |
Publications (1)
Publication Number | Publication Date |
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KR20140082638A true KR20140082638A (en) | 2014-07-02 |
Family
ID=47437386
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020147002798A KR20140082638A (en) | 2011-07-01 | 2012-07-01 | Cartridge reactor for production of materials via the chemical vapor deposition process |
KR1020147002797A KR20140082637A (en) | 2011-07-01 | 2012-07-01 | Deposition cartridge for production materials via the chemical vapor deposition process |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
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KR1020147002797A KR20140082637A (en) | 2011-07-01 | 2012-07-01 | Deposition cartridge for production materials via the chemical vapor deposition process |
Country Status (8)
Country | Link |
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EP (2) | EP2726645A1 (en) |
JP (2) | JP2014523488A (en) |
KR (2) | KR20140082638A (en) |
CN (2) | CN103958732A (en) |
IN (1) | IN2014MN00197A (en) |
RU (2) | RU2014103707A (en) |
TW (2) | TWI472654B (en) |
WO (2) | WO2013006522A1 (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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GB2534192B (en) * | 2015-01-16 | 2019-10-23 | Oxford Instruments Nanotechnology Tools Ltd | Surface Processing Apparatus and Method |
JP2018123033A (en) * | 2017-02-02 | 2018-08-09 | 信越化学工業株式会社 | Method for producing polycrystalline silicon rod and polycrystalline silicon rod |
JP6969917B2 (en) * | 2017-07-12 | 2021-11-24 | 信越化学工業株式会社 | Manufacturing method of polycrystalline silicon rod and polycrystalline silicon rod |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4710260A (en) * | 1982-12-22 | 1987-12-01 | Texas Instruments Incorporated | Deposition of silicon at temperatures above its melting point |
US5320680A (en) * | 1991-04-25 | 1994-06-14 | Silicon Valley Group, Inc. | Primary flow CVD apparatus comprising gas preheater and means for substantially eddy-free gas flow |
JP2008535758A (en) * | 2005-04-10 | 2008-09-04 | アールイーシー シリコン インコーポレイテッド | Production of polycrystalline silicon |
WO2008134568A2 (en) * | 2007-04-25 | 2008-11-06 | Kagan Ceran | Deposition of high-purity silicon via high-surface area gas-solid or gas-liquid interfaces and recovery via liqued phase |
JP5428303B2 (en) * | 2007-11-28 | 2014-02-26 | 三菱マテリアル株式会社 | Polycrystalline silicon manufacturing method |
US8399072B2 (en) * | 2009-04-24 | 2013-03-19 | Savi Research, Inc. | Process for improved chemcial vapor deposition of polysilicon |
KR101115697B1 (en) * | 2009-12-02 | 2012-03-06 | 웅진폴리실리콘주식회사 | Cvd reactor with energy efficient thermal-radiation shield |
-
2012
- 2012-07-01 KR KR1020147002798A patent/KR20140082638A/en not_active Application Discontinuation
- 2012-07-01 EP EP12807788.0A patent/EP2726645A1/en not_active Withdrawn
- 2012-07-01 JP JP2014519213A patent/JP2014523488A/en active Pending
- 2012-07-01 EP EP12808029.8A patent/EP2726646A1/en not_active Withdrawn
- 2012-07-01 RU RU2014103707/02A patent/RU2014103707A/en not_active Application Discontinuation
- 2012-07-01 KR KR1020147002797A patent/KR20140082637A/en not_active Application Discontinuation
- 2012-07-01 CN CN201280042301.XA patent/CN103958732A/en active Pending
- 2012-07-01 WO PCT/US2012/045176 patent/WO2013006522A1/en active Application Filing
- 2012-07-01 RU RU2014103710/02A patent/RU2014103710A/en not_active Application Discontinuation
- 2012-07-01 WO PCT/US2012/045177 patent/WO2013006523A1/en active Application Filing
- 2012-07-01 CN CN201280042405.0A patent/CN103998648A/en active Pending
- 2012-07-01 JP JP2014519212A patent/JP2014522799A/en active Pending
- 2012-07-02 TW TW101123695A patent/TWI472654B/en not_active IP Right Cessation
- 2012-07-02 TW TW101123832A patent/TW201305376A/en unknown
-
2014
- 2014-01-30 IN IN197MUN2014 patent/IN2014MN00197A/en unknown
Also Published As
Publication number | Publication date |
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TW201305400A (en) | 2013-02-01 |
IN2014MN00197A (en) | 2015-08-21 |
JP2014523488A (en) | 2014-09-11 |
EP2726646A1 (en) | 2014-05-07 |
RU2014103707A (en) | 2015-08-10 |
KR20140082637A (en) | 2014-07-02 |
RU2014103710A (en) | 2015-08-10 |
CN103958732A (en) | 2014-07-30 |
EP2726645A1 (en) | 2014-05-07 |
JP2014522799A (en) | 2014-09-08 |
WO2013006522A9 (en) | 2013-02-14 |
WO2013006523A1 (en) | 2013-01-10 |
TWI472654B (en) | 2015-02-11 |
WO2013006522A1 (en) | 2013-01-10 |
CN103998648A (en) | 2014-08-20 |
TW201305376A (en) | 2013-02-01 |
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