KR20140078215A - Chemical vapor deposition apparatus and chemical vapor deposition method using the same - Google Patents

Chemical vapor deposition apparatus and chemical vapor deposition method using the same Download PDF

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Publication number
KR20140078215A
KR20140078215A KR1020120147311A KR20120147311A KR20140078215A KR 20140078215 A KR20140078215 A KR 20140078215A KR 1020120147311 A KR1020120147311 A KR 1020120147311A KR 20120147311 A KR20120147311 A KR 20120147311A KR 20140078215 A KR20140078215 A KR 20140078215A
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KR
South Korea
Prior art keywords
reaction chamber
chamber
chemical vapor
vapor deposition
precursor
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Application number
KR1020120147311A
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Korean (ko)
Inventor
정희석
김규석
차진욱
양은주
김미양
함석진
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삼성전기주식회사
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Priority to KR1020120147311A priority Critical patent/KR20140078215A/en
Publication of KR20140078215A publication Critical patent/KR20140078215A/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4488—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by in situ generation of reactive gas by chemical or electrochemical reaction
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electrochemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

The present invention relates to a chemical vapor deposition apparatus capable of performing accurate and precise deposition, and a chemical vapor deposition method using the same.
To this end, the vapor deposition apparatus according to the present invention comprises: a reaction chamber; A heating unit for heating the reaction chamber; A pre-chamber coupled to one end of the reaction chamber; And a transfer unit disposed in the preliminary chamber and transferring the precursor to the reaction chamber.

Description

TECHNICAL FIELD [0001] The present invention relates to a chemical vapor deposition apparatus and a chemical vapor deposition method using the same,

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a chemical vapor deposition apparatus and a chemical vapor deposition method using the same, and more particularly, to a chemical vapor deposition apparatus capable of performing accurate and precise deposition and a chemical vapor deposition method using the same.

In general, CVD (Chemical Vapor Phase Deposition) is used as a main method for growing various crystal films on various substrates.

In recent years, a horizontal chemical vapor deposition apparatus has been used for chemical vapor deposition. The chemical vapor deposition method using a horizontal chemical vapor deposition apparatus can be divided into three processes as follows.

First, a wafer and a metal precursor are charged into a boat and charged into a quartz tube. Then, a precursor is charged into a quartz tube and a deposition condition is formed. Finally, when the deposition condition is completed, a temperature of the furnace is raised to vaporize the precursor, and a vaporized precursor is deposited on the thin film.

However, in the conventional chemical vapor deposition apparatus, as described above, the precursor is charged into the quartz tube and the deposition condition is established. As a result, in the process of raising the temperature of the inside of the quartz tube at room temperature, the precursor may be deposited on the wafer before liquefaction and vaporization and the deposition conditions are satisfied.

In this case, there is a problem that the quality of the thin film is lowered because the deposition is not performed under the complete deposition condition.

Japanese Patent Application Laid-Open No. 2008-050228

It is an object of the present invention to provide a chemical vapor deposition apparatus capable of performing deposition under the completed deposition conditions, and a chemical vapor deposition method using the same.

It is another object of the present invention to provide a chemical vapor deposition apparatus capable of performing accurate and precise deposition and a chemical vapor deposition method using the same.

A chemical vapor deposition apparatus according to an embodiment of the present invention includes a reaction chamber; A heating unit for heating the reaction chamber; A pre-chamber coupled to one end of the reaction chamber; And a transfer unit disposed in the preliminary chamber and transferring the precursor to the reaction chamber.

In the present embodiment, the transfer unit may include: a transfer bar disposed inside the preliminary chamber; At least one boat coupled to the carrying rod, the at least one boat receiving the precursor; And a transport handle disposed outside the pre-chamber and magnetically coupled with the transport bar to move with the transport bar.

In this embodiment, the transfer portion may include a magnetic portion formed at one end of the carrying rod and magnetically coupled with the carrying handle inside the preliminary chamber.

In the present embodiment, the carrying rod has a plurality of engaging holes arranged at regular intervals, and the boat has a fixing hole corresponding to the engaging hole, And can be coupled to the carrying rod as it simultaneously penetrates the hole.

In the present embodiment, the boat may be formed with a coupling groove into which the transportation rod is inserted, on a lower surface coupled with the transportation rod.

In the present embodiment, a gas injection unit for supplying a transfer gas to the reaction chamber; And a gas exhaust unit for exhausting the gas in the reaction chamber to the outside.

In this embodiment, the gas injection unit may be connected to one end of the reaction chamber, and the gas exhaust unit may be connected to the other end of the reaction chamber.

According to another aspect of the present invention, there is provided a chemical vapor deposition method comprising: disposing a wafer in a reaction chamber and disposing a precursor in a preliminary chamber coupled to one end of the reaction chamber; Heating the reaction chamber to form optimal deposition conditions; And injecting the precursor into the reaction chamber when the optimal deposition condition is established.

In the present embodiment, the step of injecting the precursor into the reaction chamber may be a step of moving and placing the precursor into the reaction chamber by a sliding method.

The chemical vapor deposition apparatus and the chemical vapor deposition method using the same according to the present invention can introduce a precursor into the reaction chamber after the deposition conditions are completely formed.

Therefore, as compared with an apparatus and a method in which a temperature rise process is performed in a state where a precursor is put in a conventional manner, a chemical reaction can be performed more precisely, so that a chemical reaction of a precursor can be optimized and a thin film of good quality can be obtained.

Further, since the rate of the introduced precursor can be increased, the problem of remaining remnants of the precursor can be solved.

1 and 2 are sectional views schematically showing a chemical vapor deposition apparatus according to an embodiment of the present invention.
3 is a perspective view showing a conveyance unit according to an embodiment of the present invention;
FIG. 4 is an exploded perspective view of FIG. 3; FIG.

Before describing the present invention in detail, the embodiments described in the present specification and the configurations shown in the drawings described below are only the most preferred embodiments of the present invention, and not all of the technical ideas of the present invention are described. It should be understood that there may be various equivalents and variations that may be substituted at the time of filing. In this specification, the singular forms include plural forms unless the context clearly dictates otherwise

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 and 2 are cross-sectional views schematically showing a chemical vapor deposition apparatus according to an embodiment of the present invention. Here, FIG. 1 shows a state before a precursor is injected into a reaction chamber, and FIG. 2 shows a state where a precursor is injected into a reaction chamber.

1 and 2, a chemical vapor deposition apparatus 100 according to an embodiment of the present invention includes a reaction chamber 4, a heating unit 7, a gas injection unit 40, a gas exhaust unit 50, A preliminary chamber 20, and a transfer part 30. [

The reaction chamber 4 is a place where a chemical vapor reaction occurs between the precursor flowing into the inside and the wafer 10 as an object to be deposited, and provides an internal space of a predetermined size. The reaction chamber 4 may be made of a long quartz tube, and if necessary, the inner surface may be provided with a heat insulating material to withstand a high temperature atmosphere.

Both ends of the reaction chamber 4 may be coupled with a flange 3 capable of opening and closing. At least one of the flanges 3 may be opened or a window 5 capable of opening and closing may be formed. The window 5 can be used as a passageway when the precursor, the wafer 10, or the like is placed inside the reaction chamber 4.

Although not shown, various sensors (for example, temperature sensors, pressure sensors, etc.) capable of measuring the internal atmosphere temperature, pressure, gas flow, etc. of the reaction chamber 4 may be provided in the reaction chamber 4 .

The heating section 7 is disposed on the outer surface of the reaction chamber 4 or inside thereof to provide heat to the inside of the reaction chamber 4. [ In this embodiment, an example in which the electric heater using the coil 8 is used as the heating unit 7 is taken as an example. However, the present invention is not limited thereto, and various devices can be used according to need, such as high frequency induction, infrared radiation, and laser.

The gas injection unit 40 is connected to one end of the reaction chamber 4 to supply gas into the reaction chamber 4. At this time, the supplied gas may be supplied as a carrier gas to form a flow of gas in the reaction chamber 4.

For this purpose, the gas injection part 40 may include a gas supply part 42 for supplying a gas, a flow regulator 41 for regulating the flow of the gas, and an on-off valve 43 for controlling the inflow of the gas have.

The gas injection unit 40 is connected to the outside of the reaction chamber 4, that is, to one end thereof, and can supply gas to form a flow of gas to the other end of the reaction chamber 4 in which the wafer 11 is disposed.

The gas exhaust unit 50 is connected to the other end of the reaction chamber 4 to discharge the gas inside the reaction chamber 4 to the outside. The gas exhaust part 50 is provided to form the inside of the reaction chamber 4 in a vacuum state. And can also be used to form a flow of the carrier gas introduced from the gas injection unit 40.

The gas exhaust unit 50 may include a vacuum pump 52 for exhausting the gas, a pressure regulator 51 for regulating the flow of the exhaust gas, and an on-off valve 53.

The preliminary chamber 20 may be formed in the form of a tube and disposed at one end of the reaction chamber 4 and may be formed in a vacuum state together with the reaction chamber 4 by the gas exhaust portion 50. More specifically, the preliminary chamber 20 can be fastened to the flange 3 on which the flange 3 or window 5 is formed, which is disposed at one end of the reaction chamber 4. Therefore, the preliminary chamber 20 and the reaction chamber 4 are connected together by the window 5 so that the preliminary chamber 20 is connected to the reaction chamber 4, . ≪ / RTI >

In the interior of the preliminary chamber 20, a transfer unit 30 according to the present invention may be provided.

The transfer unit 30 is provided to be movable in the interior of the spare chamber 20 and can be moved into the reaction chamber 4 through the window 5 of the flange 3.

FIG. 3 is a perspective view showing a conveyance unit 30 according to an embodiment of the present invention, and FIG. 4 is an exploded perspective view of FIG.

Referring to this, the conveying unit 30 according to the present embodiment may include a conveying rod 37, a boat 31, and a conveying handle 35.

The transport rod 37 is shaped like a long rod and is temporarily moved between the preliminary chamber 20 and the reaction chamber 4 and transports the precursor into the interior of the reaction chamber 4. The carrier rod 37 may be formed with an engagement hole 38 at regular intervals. The engaging hole 38 is used when the boat 31 described later is engaged with the carrying rod 37.

At the other end of the carrying rod 37, a magnetic part 39 can be fastened. The magnetic portion 39 may be made of a metal material attached to a magnetic substance or a magnetic substance, and may be magnetically coupled to a carrying handle 35 described later.

The magnetic portion 39 may be formed in the same shape as the inner end surface of the preliminary chamber 20. And thus can be moved along the longitudinal direction of the preliminary chamber 20 in the interior of the preliminary chamber 20.

The boat 31 is a container for receiving the precursor therein. The boat 31 may be fastened or fixed to the carrying rod 37, and may be provided as many as necessary. The boat 31 according to the present embodiment includes at least one receiving groove 33 on the upper surface thereof for receiving the precursor and a coupling groove 32 for coupling the carrying rod 37 to the bottom surface thereof, And may include a fixing hole 34 for fixing.

The fixing pin 60 is inserted into the fixing hole 34 here. The fixing pin 60 penetrates the fixing hole 34 and is inserted into the fitting hole of the carrying rod 37 to fix the boat 31 and the carrying rod 37 in a fixed manner.

According to this configuration, the boats 31 can be fixedly coupled to various positions of the transportation rods 37, and a plurality of the boats 31 can be used as needed.

The carrying handle 35 can be coupled to the preliminary chamber 20. Specifically, the carrying handle 35 is formed in a ring shape and can be coupled to the preliminary chamber 20 in such a manner that the preliminary chamber 20 is accommodated in an inner hole. The carrying handle 35 may be made of a material having a magnetic force of the carrying rod 37 and magnetically coupled with the magnetic portion 39.

More specifically, a magnetic portion 39 of the carrying rod 37 may be disposed within the carrying handle 35, and the carrying handle 35 and the magnetic portion 39 may be coupled to each other through a pulling force . The magnetic portion 39 of the carrying rod 37 is moved along the carrying handle 35 when the carrying handle 35 is moved outside the preliminary chamber 20. [ That is, in response to the movement of the carrying handle 35, the carrying rod 37 and the boat 31 coupled thereto also move together.

In this embodiment, the carrying handle 35 is formed as a circular ring. However, the present invention is limited to this, and can be formed in various forms as long as the operator can easily move the carrying rod 37.

Next, a method of forming a thin film on a wafer using the chemical vapor deposition apparatus according to this embodiment will be described.

First, the selected precursor is put into the boat 31, and then the boat 31 is fixed to the carrying rod 37. Or the boat 31 may first be fixed to the carrying rod 37 and then the precursor may be injected into the boat 31. [

Then, as shown in Fig. 1, the carrying rod 37 is disposed inside the preliminary chamber 20. This can be done by moving the transport handle 35 to the end of the reserve chamber 20 (the opposite side of the reaction chamber).

Subsequently, the preliminary chamber 20 and the reaction chamber 4 are formed in a vacuum state, and the inside of the reaction chamber 4 is formed into an environment suitable for the deposition conditions. Here, various conditions can be set according to the type and material of the precursor and the wafer, and the optimum deposition conditions. For example, under optimal deposition conditions, the temperature may be set to 700 ° C to 800 ° C, the pressure may be set to 100 torr to 300 torr, and the transport gas amount may be set to 100 cm 3 / min to 300 cm 3 / min with respect to argon (Ar) gas.

This deposition condition may be performed by controlling the gas exhaust part 50, the gas injection part 40, and the heating part 7. At this time, since only the reaction chamber 4 is heated by the heating unit 7, heat is hardly applied to the precursor located in the preliminary chamber 20. Therefore, as the precursor is heated in advance, it is possible to prevent the chemical change in the precursor before the actual deposition process.

When the pressure in the reaction chamber 4, the amount of the carrier gas, the temperature, and the like reach the optimum deposition conditions, the boat 31, that is, the precursor fastened to the carrying rod 37 is moved to the reaction chamber 4 Lt; / RTI > That is, as shown in FIG. 2, as the carrying knob 35 is moved toward the reaction chamber 4, the precursor is moved into the reaction chamber 4 in a sliding manner, and the precursor is placed in the optimum deposition condition .

Thus, vaporization of the precursor and deposition of the wafer 10 are performed.

In the chemical vapor deposition apparatus and the chemical vapor deposition method using the same, the precursor may be introduced into the reaction chamber after the deposition conditions are completely formed.

Therefore, as compared with an apparatus and a method in which a temperature rise process is performed in a state where a precursor is put in a conventional manner, a chemical reaction can be performed more precisely, so that a chemical reaction of a precursor can be optimized and a thin film of good quality can be obtained.

Further, since the rate of the introduced precursor can be increased, the problem of remaining remnants of the precursor can be solved.

The above-described chemical vapor deposition apparatus and the chemical vapor deposition method using the same are not limited to the above-described embodiments, and various variations can be made by those skilled in the art within the technical idea of the present invention. Do.

For example, in the above-described embodiments, the position of the transporting rod is controlled by using a transport handle disposed outside the tube, but the present invention is not limited thereto. For example, the position of the transportation rod can be automatically adjusted by using a motor or the like, and can be modified into various forms as needed.

In addition, although the chemical vapor deposition apparatus and the chemical vapor deposition method using the chemical vapor deposition apparatus have been described as examples in the above embodiments, the present invention can be easily applied to a system or a method for injecting a sample or a precursor into the chamber, .

100: Chemical vapor deposition apparatus
10: wafer
4: reaction chamber
20: spare chamber
30:
31: Boat
35: Carrying handle
37: Carry bar
40: gas injection part
50: gas exhaust part

Claims (9)

A reaction chamber;
A heating unit for heating the reaction chamber;
A pre-chamber coupled to one end of the reaction chamber; And
A transfer unit disposed in the preliminary chamber, the transfer unit transferring the precursor to the reaction chamber;
And a chemical vapor deposition apparatus.
The image forming apparatus according to claim 1,
A transport rod disposed within the pre-chamber;
At least one boat coupled to the carrying rod, the at least one boat receiving the precursor; And
A transport handle disposed outside the pre-chamber and magnetically coupled with the transport bar to move with the transport bar;
And a chemical vapor deposition apparatus.
The image forming apparatus according to claim 2,
And a magnetic portion formed at one end of the carrying rod and magnetically coupled with the carrying handle inside the preliminary chamber.
3. The method of claim 2,
The boat has a plurality of engaging holes arranged at regular intervals, and the boat has a fixing hole corresponding to the engaging hole, and the boat is configured such that the fixing pin passes through the engaging hole and the fixing hole at the same time Wherein the carrier rod is coupled to the chemical vapor deposition apparatus.
The boat according to claim 2,
And a coupling groove into which the transportation rod is inserted is formed on a lower surface coupled to the transportation rod.
The method according to claim 1,
A gas injection unit for supplying a transfer gas to the reaction chamber; And
A gas evacuating unit for evacuating the gas in the reaction chamber to the outside;
Further comprising: a chemical vapor deposition apparatus.
The method according to claim 6,
Wherein the gas injection unit is connected to one end of the reaction chamber, and the gas exhaust unit is connected to the other end of the reaction chamber.
Disposing a wafer in a reaction chamber and disposing a precursor in a preliminary chamber coupled to one end of the reaction chamber;
Heating the reaction chamber to form optimal deposition conditions; And
Introducing the precursor into the reaction chamber when the optimal deposition condition is established;
≪ / RTI >
9. The method of claim 8,
And moving the precursor within the reaction chamber in a sliding manner.
KR1020120147311A 2012-12-17 2012-12-17 Chemical vapor deposition apparatus and chemical vapor deposition method using the same KR20140078215A (en)

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KR1020120147311A KR20140078215A (en) 2012-12-17 2012-12-17 Chemical vapor deposition apparatus and chemical vapor deposition method using the same

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KR1020120147311A KR20140078215A (en) 2012-12-17 2012-12-17 Chemical vapor deposition apparatus and chemical vapor deposition method using the same

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