KR20140015958A - Light emitting device package - Google Patents
Light emitting device package Download PDFInfo
- Publication number
- KR20140015958A KR20140015958A KR1020120082494A KR20120082494A KR20140015958A KR 20140015958 A KR20140015958 A KR 20140015958A KR 1020120082494 A KR1020120082494 A KR 1020120082494A KR 20120082494 A KR20120082494 A KR 20120082494A KR 20140015958 A KR20140015958 A KR 20140015958A
- Authority
- KR
- South Korea
- Prior art keywords
- light emitting
- emitting device
- wavelength conversion
- light
- wavelength
- Prior art date
Links
- 238000006243 chemical reaction Methods 0.000 claims abstract description 65
- 239000000463 material Substances 0.000 claims abstract description 39
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 41
- 239000002096 quantum dot Substances 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 19
- 239000010410 layer Substances 0.000 claims description 11
- 229920005989 resin Polymers 0.000 claims description 11
- 239000011347 resin Substances 0.000 claims description 11
- 239000011241 protective layer Substances 0.000 claims description 10
- 238000009792 diffusion process Methods 0.000 claims description 4
- 229920000642 polymer Polymers 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 2
- 239000000758 substrate Substances 0.000 description 8
- 230000008859 change Effects 0.000 description 7
- 230000008901 benefit Effects 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 239000003086 colorant Substances 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000009103 reabsorption Effects 0.000 description 2
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical compound C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000002952 polymeric resin Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 239000006097 ultraviolet radiation absorber Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The present invention relates to a light emitting device package, an aspect of the present invention,
A first wavelength conversion portion having a light emitting element, a package body on which the light emitting element is mounted, and a concave portion formed on an upper surface thereof, and a first wavelength conversion material converting the wavelength of light emitted from the light emitting element into light having a first wavelength; And a second wavelength conversion unit formed in the concave portion and having a second wavelength conversion material converting a wavelength of light emitted from the light emitting device into light having a second wavelength.
Description
The present invention relates to a light emitting device package.
In general, the phosphor material for wavelength conversion is used as a material for converting specific wavelength light of various light sources into the desired wavelength light. In particular, since light emitting diodes among various light sources can be advantageously applied as LCD backlights, automobile lights, and home lighting devices due to low power driving and excellent light efficiency, phosphor materials have recently been spotlighted as a core technology for manufacturing white light emitting devices.
In particular, many researches and patents on light emitting device packages using quantum dots having color reproducibility and high quantum efficiency have been recently conducted. However, currently, a light emitting device using quantum dots or a light emitting device directly applying quantum dots to silicon has low reliability due to deterioration and disappearance of the quantum dots and thus has many problems in commercialization.
That is, when the phosphor is applied alone, the problem of color nonuniformity, reabsorption of light, and light scattering, which are inherent problems of powder phosphors, still remain. In addition, when the quantum dot is applied, the quantum dot is very vulnerable to oxygen moisture because it is mixed with the organic material, and also the phenomenon that the quantum dot disappears or discolors due to excessive heat generated from the light emitting device chip.
The present invention improves the problems of the quantum dot and the phosphor, and in order to take advantage of the two materials at the same time to produce a cup-shaped phosphor layer containing the quantum dot after blocking oxygen moisture to improve the structure and implement color reproducibility and high brightness white A light emitting device package.
One object of the present invention is to provide a novel light emitting device package having a light emitting area in the entire visible light region and excellent in high brightness, color rendering, and color reproducibility.
One aspect of the present invention to solve the above problems,
A first wavelength conversion portion having a light emitting element, a package body on which the light emitting element is mounted, and a concave portion formed on an upper surface thereof, and a first wavelength conversion material converting the wavelength of light emitted from the light emitting element into light having a first wavelength; And a second wavelength conversion unit formed in the concave portion and having a second wavelength conversion material converting a wavelength of light emitted from the light emitting device into light having a second wavelength.
In one embodiment of the present invention, the first wavelength converting material may include an inorganic phosphor, and the second wavelength converting material may include a quantum dot phosphor.
In this case, it may further include a protective layer formed on the first wavelength conversion portion to seal the recess,
The protective layer may be a glass plate or a light transmissive polymer compound.
In this case, the first wavelength converter may be a ceramic structure made of the inorganic phosphor.
In this case, the first wavelength conversion part may be made of a transparent resin containing the inorganic phosphor.
In this case, the second wavelength converter may be made of a transparent resin containing the quantum dot phosphor.
In this case, the light emitting device may emit blue light, the first wavelength converting material may be a red phosphor, and the second wavelength converting material may be a green phosphor.
In this case, the light emitting device may emit blue light, the first wavelength conversion material may be a green phosphor, and the second wavelength conversion material may be a red phosphor.
In one embodiment of the present invention, the package body includes a cavity providing a mounting area of the light emitting device, the first wavelength conversion portion may be formed to cover the upper surface of the cavity.
In one embodiment of the present invention, the first wavelength conversion portion may be formed in a cup shape.
In one embodiment of the present invention, at least a portion of the first wavelength conversion portion may be formed to correspond to the shape of the inner wall of the cavity may be inserted into the cavity.
In one embodiment of the present invention, the first wavelength conversion portion may be formed spaced apart from the bottom surface of the cavity.
In one embodiment of the present invention, at least one of the first and second wavelength conversion portion may further contain a diffusion material for smooth diffusion of light in addition to the fluorescent material.
In one embodiment of the present invention, the cavity may be a plurality of layer structure with an inner side stepped.
In this case, the cavity may include a third wavelength conversion part formed in at least one of the plurality of layer structures of the cavity and having a different material from the first and second wavelength conversion parts.
According to one embodiment of the present invention, a semiconductor light emitting device and a light emitting device can be obtained by forming a reflective layer between the substrate and the semiconductor layer to increase the light extraction efficiency and at the same time improve the reliability of the device.
In addition, by applying a quantum dot wavelength conversion portion, the half width of the wavelength is narrow and excellent color reproducibility can be utilized. In addition, by using a cup-shaped phosphor layer to lower the temperature received by the quantum dot, by using a spacer to block the oxygen / moisture, it is possible to ensure a stable life of the light emitting device package.
1 is a cross-sectional view schematically showing a light emitting device package according to an embodiment of the present invention.
2 is a cross-sectional view schematically showing a light emitting device package according to an embodiment of the present invention.
3 is a cross-sectional view schematically showing a light emitting device package according to an embodiment of the present invention.
4 is a cross-sectional view schematically showing a light emitting device package according to an embodiment of the present invention.
5 is a graph showing light emitting performance according to time change in the light emitting device package according to the related art.
6 is a graph showing a change in light wavelength with time variation in the light emitting device package according to the prior art.
7 is a graph showing light emitting performance according to time variation in a light emitting device package according to an exemplary embodiment of the present invention.
8 is a graph showing a change in light wavelength with time variation in a light emitting device package according to an embodiment of the present invention.
Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings.
However, the embodiments of the present invention can be modified into various other forms, and the scope of the present invention is not limited to the embodiments described below. Further, the embodiments of the present invention are provided to more fully explain the present invention to those skilled in the art. Accordingly, the shape and size of elements in the drawings may be exaggerated for clarity, and the elements denoted by the same reference numerals in the drawings are the same elements.
1 is a cross-sectional view schematically showing a light emitting device package according to an embodiment of the present invention. Referring to FIG. 1, the light emitting device package according to the present exemplary embodiment includes a
Hereinafter, the components of the semiconductor light emitting device according to the present embodiment will be described in detail. However, in this specification, terms such as 'top', 'bottom', and 'side' are based on the drawings and may actually vary depending on the direction in which the device is disposed.
As long as the
In this case, the light emitting diode is a light source that generates light by applying a voltage, and is mainly used where a white light source is required, such as a backlight unit. A white light emitting diode chip is mainly used as the light emitting diode, but if necessary, a red, green, or blue light emitting diode chip may be collected and configured to selectively emit light of these three colors. In addition, the mixture of the three colors can express white light, and by installing all the LED chips of each color and varying the applied voltage of each chip, the desired specific color can also be expressed.
The
That is, the
The
The
On the other hand, the
The shape of the
On the other hand, the inner wall of the
In this case, the inclination inclination of the inner wall of the
In addition, the
That is, in general, since the light emitting diode chip used as the
The
In addition, the
In addition, the first
In this case, the
The first
In particular, the first
In addition, the
The
The
In general, the quantum dot phosphor has a small half width of the emission wavelength, which is very advantageous for color reproducibility. However, on the contrary, since it has a weak disadvantage in heat, there is a side that is denatured by heat emitted during operation of the
In the present embodiment, since the second
In addition, the second
In this case, the radius of curvature of the
As described above, in the present embodiment, light is converted into two stages through two stages of wavelength converting portions of the first and second
In this case, when the
First, when the
In contrast, when the
2 is a cross-sectional view schematically showing a light emitting device package according to another embodiment of the present invention. Referring to FIG. 2, in the present exemplary embodiment, the
The
The
In this case, since the
3 is a cross-sectional view schematically showing a light emitting device package according to another embodiment of the present invention. Referring to FIG. 3, in the present embodiment, the basic configuration of the first
That is, the first
Meanwhile, another region in which the protrusion of the
4 is a cross-sectional view schematically showing a light emitting device package according to another embodiment of the present invention. Referring to FIG. 4, the present embodiment differs from the embodiment illustrated in FIGS. 1 and 2 in that a stepped
In this case, the cavity may be formed to have a stepped multi-layer structure by using a plurality of sub-substrates having hollow portions that increase in diameter from bottom to top. Details similar to those of the foregoing embodiment will be omitted.
In the present embodiment, an embodiment in which the third
In addition, a pair of first and second wavelength converting portions are disposed in the stepped
5 is a graph showing light emitting performance according to time and temperature changes in a light emitting device package according to the prior art.
Referring to FIG. 5, when the luminescence performance at the start of the test was 100%, about 20% at room temperature, about 20% at room temperature, and 40% and 90% of the stiffness at a temperature of 85 ° and 60 °, respectively. It can be seen that there is a performance drop.
6 is a graph showing a change in light wavelength with time and temperature change in a light emitting device package according to the prior art.
Referring to FIG. 6, it can be seen that the light emission amount is significantly weakened over time, especially at wavelengths around 530 nm and 600 nm.
7 is a graph showing light emitting performance according to time and temperature changes in a light emitting device package according to an embodiment of the present invention.
Referring to FIG. 7, it can be seen that there is almost no deterioration in performance at room temperature and 60 degrees even after about 1000 hours after the start of the test. In addition, it can be seen that even under poor conditions of 85 ° C, the drop in light emission performance is only about 40%, which shows very excellent stability and lifespan compared to the above-described prior art.
8 is a graph showing a change in light wavelength according to time and temperature changes in a light emitting device package according to an embodiment of the present invention.
It can be seen that even after about 1000 hours, the same light output is shown in all light wavelength regions.
The present invention is not limited by the above-described embodiments and the accompanying drawings, but is defined by the appended claims. It will be apparent to those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined in the appended claims, As will be described below.
11, 21, 31, 41:
121, 122, 321:
14, 24, 34, 44: second wavelength conversion portion 25: reflective layer
26: protective layer 331: protrusion
422 step
Claims (16)
A package body on which the light emitting element is mounted;
A first wavelength conversion unit having a concave portion formed on an upper surface thereof and having a first wavelength conversion material converting the wavelength of light emitted from the light emitting device into light having a first wavelength; And
A second wavelength conversion unit formed in the concave portion and having a second wavelength conversion material converting wavelengths of light emitted from the light emitting device into light having a second wavelength;
Emitting device package.
The first wavelength converting material includes an inorganic phosphor, and the second wavelength converting material includes a quantum dot phosphor.
Light emitting device package further comprises a protective layer formed on the first wavelength conversion portion to seal the recess.
The protective layer is a light emitting device package, characterized in that the glass plate or a light transmitting polymer compound.
The first wavelength conversion unit is a light emitting device package, characterized in that the ceramic structure consisting of the inorganic phosphor.
The first wavelength conversion unit is a light emitting device package, characterized in that made of a transparent resin containing the inorganic phosphor.
The second wavelength conversion unit is a light emitting device package, characterized in that made of a transparent resin containing the quantum dot phosphor.
The light emitting device emits blue light,
The first wavelength conversion material is a red phosphor, the second wavelength conversion material is a light emitting device package, characterized in that the green phosphor.
The light emitting device emits blue light,
The first wavelength converting material is a green phosphor, and the second wavelength converting material is a light emitting device package, characterized in that the red phosphor.
The package body includes a cavity that provides a mounting area of the light emitting device,
The first wavelength conversion unit is a light emitting device package, characterized in that formed to cover the upper surface of the cavity.
The first wavelength conversion unit is a light emitting device package, characterized in that formed in a cup shape.
The first wavelength conversion unit is a light emitting device package, characterized in that formed spaced apart from the bottom surface of the cavity.
At least one of the first and the second wavelength conversion unit further comprises a diffusion material for smooth diffusion of light in addition to the fluorescent material.
The cavity has a light emitting device package, characterized in that the inner surface has a plurality of layer structure stepped.
And a third wavelength conversion unit formed in at least one of the plurality of layer structures of the cavity and having a different material from the first and second wavelength conversion units.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020120082494A KR20140015958A (en) | 2012-07-27 | 2012-07-27 | Light emitting device package |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020120082494A KR20140015958A (en) | 2012-07-27 | 2012-07-27 | Light emitting device package |
Publications (1)
Publication Number | Publication Date |
---|---|
KR20140015958A true KR20140015958A (en) | 2014-02-07 |
Family
ID=50265230
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020120082494A KR20140015958A (en) | 2012-07-27 | 2012-07-27 | Light emitting device package |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR20140015958A (en) |
-
2012
- 2012-07-27 KR KR1020120082494A patent/KR20140015958A/en not_active Application Discontinuation
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