KR20140015650A - Apparatus and method for processing semiconductor - Google Patents

Apparatus and method for processing semiconductor Download PDF

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Publication number
KR20140015650A
KR20140015650A KR1020120067619A KR20120067619A KR20140015650A KR 20140015650 A KR20140015650 A KR 20140015650A KR 1020120067619 A KR1020120067619 A KR 1020120067619A KR 20120067619 A KR20120067619 A KR 20120067619A KR 20140015650 A KR20140015650 A KR 20140015650A
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KR
South Korea
Prior art keywords
wafer
nozzle
processing liquid
chamber
liquid
Prior art date
Application number
KR1020120067619A
Other languages
Korean (ko)
Inventor
이진우
Original Assignee
에스브이에스 주식회사
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Priority to KR1020120067619A priority Critical patent/KR20140015650A/en
Publication of KR20140015650A publication Critical patent/KR20140015650A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material

Abstract

The present invention relates to a semiconductor wafer manufacturing apparatus and method for filling a conductor in a via hole of a wafer. More particularly, the present invention relates to a wafer chuck for holding and fixing a rear surface of a wafer on which a via hole is formed; A chuck rotating unit for rotating the wafer chuck; A chamber surrounding the wafer fixed to the wafer chuck to allow processing liquid to be supplied onto the wafer; A nozzle supporter which positions a nozzle on the wafer during supply and recovery of the processing liquid and moves the nozzle to the side of the chamber after supply and recovery of the processing liquid; And an ejector coupled to the nozzle for supplying and recovering the processing liquid through the nozzle.

Description

Apparatus and Method for processing semiconductor

The present invention relates to a semiconductor wafer manufacturing apparatus and method for filling conductors, insulators, and the like in via holes of a wafer.

Due to miniaturization and large capacity of electronic products, high integration density of semiconductors has been required. As a result, the directivity of the semiconductor has been remarkably developed. Recently, however, a method of increasing the directivity has been limited, and a 3D package method of stacking a plurality of chips in one package has been developed. There was a method of stacking a plurality of chips by a 3D packaging method and then connecting wires at corners. However, this method has a disadvantage in that it requires not only an increase in area but also an intermediate layer between the chips.

In order to overcome such a problem, a through silicon via (TSV) method in which a vertical electrical connection portion is formed in a chip is proposed. In order to use the TSV method, a process of filling an insulating layer, a barrier layer, and a conductor into a via hole that is narrow and long in the thickness direction is required, unlike simply forming a circuit on a semiconductor surface. This creates a completely different problem than plating the surface.

In particular, an insulating layer, a barrier layer, a conductor, and the like must be formed in the narrow and long via hole, but there is a problem in that it cannot be effectively formed by a conventional dry method. Although a wet type semiconductor manufacturing process may be used in which a chemical is used on a wafer processing surface, there are many problems such as contamination of surfaces other than the wafer processing surface and the use of excessive chemicals.

Embodiments of the present invention have been made to solve the above problems, can be effectively and stably filled in the via hole of the wafer, it is possible to prevent the contamination of the wafer even by using a wet method, a small amount of chemical An object of the present invention is to provide a semiconductor wafer manufacturing apparatus and method for performing a semiconductor process with a chemical.

In order to solve the above-mentioned problems, an embodiment of the present invention provides a wafer chuck for supporting and fixing a rear surface of a wafer on which a via hole is formed; A chuck rotating unit for rotating the wafer chuck; A chamber surrounding the wafer fixed to the wafer chuck to allow processing liquid to be supplied onto the wafer; A nozzle supporter which positions a nozzle on the wafer during supply and recovery of the processing liquid and moves the nozzle to the side of the chamber after supply and recovery of the processing liquid; And an ejector coupled to the nozzle for supplying and recovering the processing liquid through the nozzle.

The nozzle supporter may include a base installed next to the chamber, and a rotation rod installed on the base to be rotatable in an up and down direction to support the nozzle.

The ejector may be a vacuum method that operates by compressed air that is introduced and discharged at high speed.

The nozzle may be connected to the ejector through a connecting pipe fitted to be detachably attached to the upper side of the nozzle.

A tank connected with the ejector to store the supply and recovery of the processing liquid, a pressurized gas supply unit supplying a pressurized gas so that the processing liquid of the tank can be fed to the nozzle, and when the processing liquid is supplied, The valve may further include a valve connecting the tank and the pressurized gas supply unit and connecting the tank and the ejector to recover the treatment liquid.

At least one of a lamp and a vibrator that contacts and vibrates the processing liquid may be installed on the chamber so that the processing liquid supplied on the wafer may be activated.

The lamp and the vibrator may be installed to be able to lift and lower on the chamber.

On the other hand, the present invention in another category, the method comprising the steps of: positioning the wafer with the via hole is surrounded by the chamber; Positioning a nozzle on the loaded wafer to supply a processing liquid for filling a conductor into a via hole of the wafer through the nozzle, and then moving the nozzle located on the wafer to the side of the chamber; A step of processing the wafer while the supplied processing liquid is activated to at least one of a lamp, a vibrator and a heater; After processing the wafer, placing the nozzle back on the wafer to recover the supplied processing liquid through the nozzle; After recovering the processing liquid, applying the cleaning liquid onto the wafer through the nozzle while rotating the wafer, and then recovering the cleaning liquid through the nozzle; And removing the treatment liquid remaining on the wafer after the cleaning liquid is recovered, by rotating the wafer at a higher speed than when the cleaning liquid is applied.

As described above, according to the present invention, various effects including the following can be expected. However, the present invention does not necessarily achieve the following effects.

First, according to one embodiment of the present invention, the supply and recovery of the treatment liquid by the nozzle, the ejector can be made easily.

In addition, since the nozzle is positioned on the wafer only when the processing liquid is supplied and recovered, the nozzle is moved to the side of the chamber after the supply and recovery of the processing liquid, so that the loading / unloading of the wafer can be easily performed without being disturbed by the nozzle. The action of the lamp, the vibrator, etc. for the activation of is not disturbed by the nozzle. Thus, the processing liquid can be uniformly and evenly activated so that the conductors can be effectively and stably filled in the via holes of the wafer.

In addition, the via hole treatment process of the wafer, cleaning and drying can be solved by a single apparatus, which is effective.

BRIEF DESCRIPTION OF THE DRAWINGS The conceptual sectional drawing (cap lift state) of the semiconductor wafer manufacturing apparatus of 1st Example of this invention.
2 is a top schematic view of FIG. 1.
3 is a partial cross-sectional view of the cap lowered state of FIG.
4 is a schematic diagram showing a combined state of the heater and the processing liquid recovery part of FIG.
5 is a flowchart illustrating a method of manufacturing a semiconductor wafer in accordance with an embodiment of the present invention.
6 is a conceptual cross-sectional view of a semiconductor wafer manufacturing apparatus of a second embodiment of the present invention.

Hereinafter, specific embodiments of the present invention will be described in detail with reference to the drawings.

1 is a schematic cross-sectional view of a semiconductor wafer manufacturing apparatus according to an embodiment of the present invention, FIG. 2 is a plan schematic view of FIG. 1, FIG. 3 is a partial cross-sectional view of the cap lowered state of FIG. 1, and FIG. 4 is a heater and processing of FIG. 1. It is a schematic diagram which shows the combined state of the liquid collection | recovery part.

As shown in these figures, the semiconductor wafer manufacturing apparatus of the first embodiment of the present invention includes a wafer chuck 110 for holding the back surface of the wafer 200 on which the via holes are formed, and a chuck pivot for rotating the wafer chuck 110. 120, the annular chamber 100 surrounding the wafer 200 fixed to the wafer chuck 110, and the nozzle 300 on the wafer 200 when the processing liquid 210 is supplied or recovered. After the supply and recovery of the processing liquid 210, the nozzle support 310 for moving the nozzle 300 to the chamber 100 and the nozzle 300 are combined with the nozzle 300 to supply the processing liquid 210 through the nozzle 300. It may include an ejector 400 to recover.

The wafer chuck 110 has a lower portion at the center of the supporting portion 112 to minimize heat dissipation of the supporting portion 112 supporting the wafer 200 and the heater 180 installed under the wafer chuck 110. It may include a central protrusion 114 protruding toward and penetrating the heater 180. The supporting part 112 may be rotatably installed on the open lower side of the chamber 100 and cover the open lower side of the chamber 100. The supporting part 112 may be provided with a component for stably fixing the wafer 200 by a vacuum pressure or the like. The central protrusion 114 is integrally coupled with the driving shaft 122 of the chuck driving unit 120 so that the driving shaft 122 of the chuck driving unit 120 may be fitted in the vertical direction so as to be rotated by receiving the rotational force ( 114a) may be formed.

In particular, the wafer chuck 110 is formed of a thermally conductive material such as aluminum so that the heat of the heater 180 installed below the wafer chuck 110 can be transferred to the processing liquid 210 through the wafer chuck 110. Can be.

The chuck rotating unit 120 may be a motor 124, etc. In this case, the motor 124 may be a servo motor to adjust the rotation speed.

The nozzle 300 is a processing liquid 210 forms a supply and recovery passage, or a connection pipe 320 for supplying and recovering the processing liquid 210 is fitted to an upper side of the nozzle 300, or a connection pipe ( 320 may be formed to have an inner passage that is vertically penetrated so that the upper and lower penetrates. The connection pipe 320 may be made of a rubber hose or the like to have good fluidity, and may be attached or detached by fitting to the nozzle 300.

The nozzle support 310 has a simple nozzle 300 between a first point where the nozzle 300 is located on the wafer 200 and a second point where the nozzle 300 is moved to the chamber 100 and waiting. The nozzle 300 may be configured to be rotated about an up and down axis to move through a short path and to prevent interference with a surrounding.

As a preferred example for this purpose, the nozzle support 310 is installed in the base 312 side by side next to the chamber 100, and the rotating rod is installed on the base 312 so as to be rotatable in the vertical direction to support the nozzle 300 314 may include. The base 32 is fixed to the frame of the semiconductor wafer manufacturing apparatus. Rotating rod 310 is a vertical rod (314a) and the vertical rod (314a) is rotatably coupled in the vertical direction so that the nozzle 300 can be rotated between the first point and the second point described above, A horizontal rod 314b horizontally installed at an upper end of the 314a and having the nozzle 300 coupled to the free end thereof may be included. The rotating rod 310 may be integrally coupled to the rotating shaft of the motor installed in the base 312 so as to be rotated by the motor.

Ejector 400 is preferably composed of a vacuum-type ejector acting by compressed air that is introduced and discharged at high speed, in particular for the stable supply and recovery of the treatment liquid (210).

The ejector 400 may be connected through the nozzle 300 and the connection pipe 320 for supplying and recovering the treatment liquid 210 through the nozzle 300. The ejector 400 may be connected through a tank 410 and a hose in which the treatment liquid 300 to be supplied and recovered is stored.

In particular, the ejector 400 may be configured for the pumping of the processing liquid 210 only during the supply and recovery of the processing liquid 210. Of course, the ejector 400 may be configured to be driven only when the processing liquid 210 is supplied, or may be configured to be driven both when the processing liquid 210 is supplied and recovered. However, the supply of the processing liquid 210 may be more advantageously made by a pressure feeding method by the pressurized gas supplied from the pressurized gas supply unit 420. That is, the tank 410 is connected to the pressurized gas ball part 420 through a hose or the like, so that when the pressurized gas is pressurized into the tank 410, the processing liquid 210 of the tank 410 is pressurized by the press input. It may be discharged from 410 and supplied. The pressurized gas may be selected according to the chemical characteristics of the treatment liquid 210 so as not to react with the treatment liquid 210 at all. For example, the pressurized gas may be nitrogen gas (N 2 ) when the treatment liquid 210 is a nickel alloy.

In addition, a valve for opening and closing is configured at the connection part of the tank 410 and the pressurized gas supply part 420, and the connection part of the tank 410 and the ejector 400. That is, the valve connects the tank 410 and the pressurized gas supply part 420 when the processing liquid 210 is supplied, blocks the tank 410 and the ejector 400, and recovers the processing liquid 210. The 410 may be connected to the ejector 400, and may be blocked between the tank 410 and the pressurized gas supply unit 420.

On the other hand, the present invention is a vibrator 130 for vibrating the processing liquid 210 supplied on the wafer 200 surrounded by the chamber 100 and the processing liquid 210 scattered during the rotation of the wafer chuck 110 The apparatus may further include a processing liquid recovery unit 170 to recover and a heater 180 transferring heat to the processing liquid 210 supplied on the wafer 200 surrounded by the chamber 100.

The vibrator 130 may generate any vibration wave and transmit the vibration wave to the processing liquid 210. However, the vibrator 130 may be more advantageous for activating the processing liquid 210 to fill a conductor in the via hole of the wafer 200. In order to prevent the 200 from being damaged by an indirect impact due to the vibration of the processing liquid 210, a piezoelectric element or the like that generates ultrasonic waves by a piezoelectric effect may be preferable. The piezoelectric element array of the vibration difference may be designed in consideration of such a point so that the vibration may occur uniformly and evenly in response to the shape of the wafer 200 (eg, the disc shaped wafer 200).

In particular, the vibrator 130 may be installed to be in contact with the water surface of the processing liquid 210 to indirectly impact the wafer 200 with the vibration due to the processing liquid 210 therebetween. However, the vibrator 130 is more preferably installed in the chamber cap 140 installed to be able to move up and down on the upper side of the chamber 100 so as not to interfere with loading / unloading of the wafer 200. It may be desirable. That is, the vibrator 130 may be positioned below the chamber cap 140 and may be coupled to the chamber cap 140 so that the vibrator may be vertically elevated up and down with the chamber cap 140. The elevating device 150 for raising and lowering the chamber cap 140 may be implemented as a rack, a pinion, or as an elevator in various forms such as a cylinder.

In addition, the vibrator 130 may further enhance the vibration effect for activating the processing liquid 210 and may uniformly and evenly transmit vibration waves to the processing liquid 210, corresponding to the circular wafer 200. Concentric with and may be formed in a radially long bar shape in the wafer 200 to be rotatable. That is, the rotating shaft 132 of the vibrator 130 may be coupled to the chamber cap 140 so as to be rotatable in the vertical direction.

The configuration 160 for rotating the vibrator 130 may be formed of a motor coupled to the rotating shaft 132 of the vibrator 130, and the motor for rotating the vibrator 130 may rotate the vibrator 130 while rotating the vibrator 130. It can be implemented by a servo motor method to adjust the rotational speed of the.

The processing liquid recovery part 170 is formed in an annular tube shape in which a part of the inner circumference is opened in the circumferential direction, and is formed to surround the outer circumference of the wafer chuck 110. Therefore, the wafer chuck 110 rotates to prevent the processing liquid 210 remaining on the wafer 200 from scattering to the outside. The chamber 100 is provided with a discharge port (not shown) to discharge the liquid to the treatment liquid recovery unit 170.

The processing liquid recovery unit 170 is covered by the wafer chuck 110 with the upper side of the processing unit 175 and the lower side of the processing liquid recovery unit 170. It can form an internal space that is built. The cover portion 175 may be formed as a plate as shown, and may be formed in various ways, such as a cap structure, a dome structure, as needed.

The heater 180 transfers heat to the processing liquid 210 through the wafer chuck 110, and the processing liquid recovery unit 170, the cover 175, and the wafer chuck to minimize heat loss due to heat dissipation. It may be installed in the inner space formed by (110).

The heater 180 may be formed in a disc shape corresponding to the wafer 200 so that heat transfer may be uniformly performed. In the heater 180, a central through hole 180a may be formed to allow the central protrusion 14 of the wafer chuck 110 to pass therethrough. Furthermore, the heater 180 is formed in a disk shape by the plurality of heater members 181, 182, and 183 having a concentric circle structure formed in a disc or annular shape, respectively, for a uniform temperature distribution, and the temperature of each heater member 181, 182, 183 is the heater temperature. It can be independently controlled by a heater controller that makes adjustments. In addition, each heater member (181, 182, 183) may be divided equally or differentially along the radial direction of the circle. Each heater member 181, 182, 183 may be formed of the same material, or may be formed of different materials.

Meanwhile, the treatment liquid 210 may be determined according to which of several processes for filling a conductor in the via hole of the wafer 200, for example, copper plating after forming an insulating layer in the via hole of the wafer 200. As an intermediate step before forming the conductor layer, the nickel alloy may be used as a main chemical element or a chemical element capable of acting as an adhesive.

In addition, the processing liquid 210 is a post processing liquid for cleaning the wafer 200 after the processing by the main processing liquid 210 as well as the main processing liquid 210 for filling a conductor in the via hole of the wafer 200. There may be a cleaning liquid as 210. The main treatment liquid 210 and the after treatment liquid 210 may be supplied and recovered through a separate treatment liquid supply recovery device according to chemical characteristics.

Hereinafter, a description will be given of an operation for the above-described manufacturing apparatus while describing a manufacturing method for a processing process for filling a conductor in a via hole of a semiconductor wafer 200 of the present invention.

5 is a flowchart illustrating a method of manufacturing a semiconductor wafer 200 in accordance with an embodiment of the present invention.

As shown in FIG. 5, the method for manufacturing a semiconductor wafer 200 according to the present invention is one of a plurality of processes for filling a conductor in a via hole of a wafer 200, and a via hole for filling a main processing liquid 210. The treatment step may be followed by a subsequent post-treatment step.

The via hole treatment process step can be accomplished as follows.

First, the wafer 200 is loaded onto the wafer chuck 110 while the chamber cap 140 is elevated above the chamber 100 (S10), and then the vibrator 130 is lowered by lowering the chamber cap 140. A predetermined distance from the wafer 200 on the 110 is maintained (S20). Next, the main processing liquid 210 is supplied into the chamber 100 through a nozzle or the like (S30). At this time, the main treatment liquid 210 is supplied at a predetermined temperature for activation, and at least the water level is supplied at a predetermined level so that the water surface touches the vibrator 130. After the main treatment liquid 210 is filled in the chamber 100, the vibrator 130 is driven to generate ultrasonic waves, and the vibrator 130 is rotated (S40). Then, the main processing liquid 210 is more activated by the vibrator 130, so that the processing liquid 210 can be easily filled in the via hole of the wafer 200 without gaps, and the vibration of the processing liquid 210 The bubbles existing in the via holes of the wafer 200 are removed by the indirect shock, so that the wafer 200 can be processed uniformly and evenly without defects as a whole. In addition, the heater 180 is operated to maintain the temperature at the time of supply of the processing liquid 210 in order to prevent the activation of the processing liquid 210 from being lowered and heat the heater 180 through the wafer chuck 110 through the processing liquid ( To 210).

On the other hand, the supply of the main treatment liquid 210 may be made through the chamber cap 140 or the space between the chamber cap 140 and the chamber 100 after the lowering of the chamber cap 140, or the chamber cap 140 May be preceded before descending.

When the processing of the wafer 200 is completed, the driving and rotation of the vibrator 130 is stopped, the heater 180 is stopped (S50), and the process immediately proceeds to the post-processing step as follows.

First, the main processing liquid 210 supplied to the chamber 100 through a nozzle or the like is discharged and recovered outside the chamber 100 (S60). At this time, the recovery of the main treatment liquid 210 may be made in a state where the chamber cap 140 is lowered, or may be made after the chamber cap 140 is elevated.

After the recovery of the main processing liquid 210, the cleaning liquid is applied onto the wafer 200 while rotating the wafer chuck 110 (S70). Then, the cleaning liquid may be uniformly and evenly applied on the wafer 200 by the rotation of the wafer 200, and the cleaning liquid may clean the wafer 200 more cleanly by centrifugal force. At this time, the rotation speed of the wafer chuck 110 is set at a low speed so that the cleaning of the wafer 200 is sufficiently performed by the cleaning liquid.

After the cleaning of the wafer 200 is finished, the cleaning liquid is discharged and recovered outside the chamber 100 through a nozzle or the like (S80), and the wafer chuck 110 is rotated at high speed (S90). Then, the cleaning liquid remaining on the wafer 200 is scattered and removed from the wafer 200 by centrifugal force, and the wafer 200 can be dried quickly by the rotational wind of the wafer 200.

The cleaning liquid scattered from the wafer 200 may be discharged out of the chamber 100 through the liquid recovery part.

After the wafer 200 is sufficiently dried, the rotation of the wafer 200 is stopped (S100).

As described above, the wafer 200 is unloaded from the wafer chuck 110 after the via hole treatment process and the post-treatment such as cleaning and drying are continuously performed by one device (S110).

6 is a conceptual cross-sectional view of a semiconductor wafer manufacturing apparatus of a second embodiment of the present invention.

As shown in FIG. 6, in the semiconductor wafer manufacturing apparatus of the second embodiment of the present invention, as described above, the chamber 100, the wafer chuck 110, and the chuck rotation are referred to. Eastern part 120, nozzle 300, nozzle support 310, ejector 400, tank 410, and pressurized gas supply 420, in particular the treatment liquid for the formation of a conductor layer In the case of a conductive component, the lamp 500 may further include a lamp 500 installed above the chamber 100 for activating the processing liquid to irradiate light toward the wafer. The lamp 500 may be installed to be able to descend.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the invention.

100; Chamber 110; Wafer chuck
120; Chuck Drive 130; Oscillator
140; Chamber cap 150; Hoist
170; Processing liquid recovery unit 175; Abdomen
180; Heater 200; wafer
300; Nozzle 310; Nozzle support
400; Ejector 410; Tank
420; Pressurized gas supply unit 500; lamp

Claims (8)

A wafer chuck for holding and fixing a back surface of a wafer on which a via hole is formed;
A chuck rotation unit for rotating the wafer chuck;
A chamber surrounding the wafer fixed to the wafer chuck to allow processing liquid to be supplied onto the wafer;
A nozzle supporter which positions a nozzle on the wafer during supply and recovery of the processing liquid, and moves the nozzle to the side of the chamber after supplying and recovering the processing liquid;
An ejector coupled to the nozzle to supply and recover the treatment liquid through the nozzle;
Semiconductor wafer manufacturing apparatus comprising a. The method according to claim 1,
And the nozzle support part includes a base installed next to the chamber, and a rotation rod installed on the base to rotatably rotate the shaft in an up and down direction to support the nozzle. The method according to claim 1,
The ejector is a semiconductor wafer manufacturing apparatus, characterized in that the vacuum system acting by the compressed air flowing in, out at high speed. The method according to claim 1,
The nozzle is a semiconductor wafer manufacturing apparatus, characterized in that connected to the ejector through a connecting pipe which is fitted to be detachably attached to the upper side of the nozzle. The method according to claim 1,
A tank connected with the ejector to store the processing liquid supplied and recovered;
A pressurized gas supply unit supplying a pressurized gas so that the processing liquid of the tank may be fed to the nozzle and supplied;
And a valve for connecting the tank and the pressurized gas supply part when supplying the processing liquid and connecting the tank and the ejector when recovering the processing liquid. The method according to any one of claims 1 to 5,
And at least one of a lamp and a vibrator in contact with and vibrating the processing liquid so that the processing liquid supplied on the wafer can be activated on the chamber. The method of claim 6,
The lamp and the vibrator is a semiconductor wafer manufacturing apparatus, characterized in that installed so as to be able to lift on the chamber. Positioning the wafer on which the via hole is formed so as to be surrounded by the chamber;
Positioning a nozzle on the loaded wafer to supply a processing liquid for filling a conductor into a via hole of the wafer through the nozzle, and then moving the nozzle located on the wafer to the side of the chamber;
A step of processing the wafer while the supplied processing liquid is activated to at least one of a lamp, a vibrator and a heater;
After processing the wafer, placing the nozzle back on the wafer to recover the supplied processing liquid through the nozzle;
After recovering the processing liquid, applying the cleaning liquid onto the wafer through the nozzle while rotating the wafer, and then recovering the cleaning liquid through the nozzle;
After recovering the cleaning liquid, rotating the wafer at a higher speed than applying the cleaning liquid to remove the treatment liquid remaining on the wafer;
Semiconductor wafer manufacturing method comprising a.
KR1020120067619A 2012-06-22 2012-06-22 Apparatus and method for processing semiconductor KR20140015650A (en)

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KR20140015650A true KR20140015650A (en) 2014-02-07

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