KR20130110564A - Heating assembly and wafer processing apparatus using thereof - Google Patents

Heating assembly and wafer processing apparatus using thereof Download PDF

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Publication number
KR20130110564A
KR20130110564A KR1020120032614A KR20120032614A KR20130110564A KR 20130110564 A KR20130110564 A KR 20130110564A KR 1020120032614 A KR1020120032614 A KR 1020120032614A KR 20120032614 A KR20120032614 A KR 20120032614A KR 20130110564 A KR20130110564 A KR 20130110564A
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KR
South Korea
Prior art keywords
substrate
heat generating
heating
generating member
assembly
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Application number
KR1020120032614A
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Korean (ko)
Inventor
황희
유승관
박영헌
Original Assignee
주식회사 원익아이피에스
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Priority to KR1020120032614A priority Critical patent/KR20130110564A/en
Publication of KR20130110564A publication Critical patent/KR20130110564A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)

Abstract

PURPOSE: A heating member assembly and a substrate processing device including the same effectively deliver radiant energy generated from a heating member to a substrate to be heated by thinly coating the upper surface of a protective member protecting the heating member with an yttrium oxide. CONSTITUTION: A heating member (410) heats at least one substrate on a substrate support by discharging radiant energy. The heating member is composed of at least one among an optical heating member and an electric heating member. A protection member (420) transmits the radiant energy discharged from the heating member. A coating film (430) protects the protection member from process gas on a part of the protection member. The protection member includes a blocking member (422) blocking the transmission of the radiant energy discharged from the heating member and a cover member (421) covering the space of the blocking member.

Description

Heating element assembly and substrate processing apparatus comprising the same

The present invention relates to a substrate processing apparatus for manufacturing a semiconductor device, and more particularly to a heat generating member assembly for heating a substrate in a process chamber and a substrate processing apparatus using the same.

In order to manufacture a semiconductor device, it is subjected to various processes such as deposition and etching on a substrate. The process is generally performed in a chamber of a substrate processing apparatus. For example, in the case of a chemical vapor deposition (CVD) process, the substrate processing apparatus includes a substrate support and a gas injection means in the chamber together with the chamber. The substrate support has a substrate mounting portion for mounting the substrate on the upper surface, and can be heated by the heat generating means. The gas injection means is disposed above the substrate support to inject the deposition gas toward the rotating substrate support, so that the thin film is deposited on the substrate seated on the substrate mounting portion of the substrate support.

It is important to keep the temperature of the substrate or substrate support uniform in order to deposit a thin film evenly on the substrate, especially when processing a large diameter substrate or processing multiple wafers, it becomes more important to maintain the uniformity of this temperature. This is because the semiconductor device manufactured after the thin film deposition process may have a defect due to the nonuniformity of the substrate temperature with the target process temperature. Therefore, in order to provide a temperature on the substrate, a heat generating member is installed inside the substrate support or the bottom of the substrate support, and provides heat generated from the heat generating member through the substrate support to the substrate by using a radiation or heat conduction phenomenon.

Meanwhile, in order to process the substrate in the process chamber, fluoride such as NF 3 , chloride process gas such as BCl 3 and SnCl 4, and halogen compounds such as ClF 3 used to clean contaminants deposited in the process chamber are continuously used. . In this case, a material generally used as an internal material of a semiconductor process chamber, that is, a metal material such as aluminum or a nickel alloy, a thermal spray coating such as an aluminum anodized film or boron carbide, aluminum oxide (Al 2 O 3 ) or silicon nitride (Si Materials such as sintered body films such as 3 N 4 ) are susceptible to chemical damage by the highly corrosive halogen ions mentioned above, or to prominent corrosion and wear due to ceramic compound particles, ions excited by plasma, and the like. Occurs.

This chamber internal damage problem may also apply to the heating member that heats the substrate. Therefore, in order to prevent the heat generating member from being damaged by the process gas or the cleaning gas, it is necessary to make a protective member that can surround the heat generating member with a material having high corrosion resistance, or to contact the heat generating member with a highly corrosive process gas. In order to prevent the supply of an inert gas such as argon (Ar) from the lower portion of the heat generating member has been trying to prevent damage. However, when the heating member is wrapped in a separate member, there is a problem that the efficiency of heat transferred from the heating member to the substrate is lowered, and the method using an inert gas also makes it difficult to completely block the process gas. There has been a demand for a more effective solution to this problem.

SUMMARY OF THE INVENTION An object of the present invention is to solve the above-mentioned problems, and to provide the substrate with heat generated from the heat generating member efficiently, and at the same time, the surface of the protective member protecting the heat generating member by halogen-containing process gas, plasma ions or cleaning gas. The present invention provides a heating member assembly capable of protecting against corrosion and abrasion, and a substrate processing apparatus using the same.

The heat generating member assembly according to the present invention for achieving the above object is a heat generating member assembly provided in the lower portion of the substrate support provided in the reaction space of the substrate processing apparatus, at least one substrate on the substrate support by emitting radiation Heating member for heating the; And a protective member that transmits radiant energy emitted from the heating member and protects the heating member, and at least a portion of the protective member includes a coating film formed to have corrosion resistance to protect the protective member from the process gas. .

In addition, the substrate processing apparatus according to the present invention includes a process chamber having a reaction space therein; Gas injection means for injecting gas into the process chamber; A substrate support installed in the process chamber and having a substrate seating portion formed on an upper surface thereof so that at least one substrate is seated thereon; And a heat generating member assembly installed under the substrate support provided in the reaction space of the substrate processing apparatus, the heat generating member releasing radiant energy to heat at least one substrate on the substrate support. And a protective member that transmits radiant energy emitted from the heating member and protects the heating member, wherein at least a portion of the protective member has a coating film having a corrosion resistance to protect the protective member from the process gas. And a heat generating member assembly.

The heat generating member assembly according to the present invention effectively transmits radiant energy generated from the heat generating member to the substrate to be heated by coating a thin layer of yttrium oxide (Y 2 O 3 ) on the upper surface of the protective member protecting the heat generating member, and at the same time, the surface of the protective member. Can be protected from corrosion and abrasion caused by halogen-containing process gas, plasma ions or cleaning gas.

In addition, since the yttrium oxide coating film suppresses the generation of abnormal film that may occur on the surface of the protective member, it is also possible to obtain an effect of extending the life of the heat generating member assembly.

1 is a side cross-sectional view schematically showing a substrate processing apparatus according to an embodiment of the present invention.
2 is a partial perspective view illustrating a portion of a heat generating member assembly according to an embodiment of the present invention.

Hereinafter, with reference to the accompanying drawings, it will be described in detail the invention according to the preferred embodiment.

1 is a side cross-sectional view schematically showing a substrate processing apparatus according to an embodiment of the present invention.

Referring to FIG. 1, the substrate processing apparatus 10 according to the present exemplary embodiment is a device that processes various processes such as deposition, etching, and cleaning on a substrate for manufacturing a semiconductor or a display, and for example, injects gas into a substrate. To deposit a thin film. Therefore, the chamber 100 includes a chamber 100 in which a process of depositing such a thin film is performed, a gas injection means 200, a substrate support 300, a heat generating member assembly 400, and the like. In addition, the driving means 500 capable of elevating or rotating the substrate support 300, the exhaust means 600 capable of exhausting residual gas in the chamber 100 to the outside of the chamber, or the chamber 100. Plasma generating means (not shown) for exciting the process gas supplied to the plasma may be further included.

The chamber 100 has a reaction space therein. Here, the reaction space refers to a space in which a chemical reaction caused by injecting a gaseous mixture or a plasma gas mixture onto the heated substrate surface occurs in order to deposit a thin film on the substrate surface. The inner surface of the chamber may be coated with aluminum oxide (Al 2 O 3 ), Teflon, quartz or the like to protect the interior of the chamber from erosion or damage caused by such chemical reactions.

Meanwhile, the chamber 100 itself may also be made of stainless steel, a ceramic compound, aluminum oxide, or the like. The outer shape of the chamber may be cylindrical or polygonal, and the interior may be cylindrical. However, the body of the chamber according to the invention is not limited to any particular configuration or size.

The gas injection means 200 may be mounted on the top lid 110 covering the upper opening of the chamber 100 to seal the inside of the chamber 100.

The gas injection means 200 includes at least one gas injection unit 210 for injecting a process gas toward the substrates W mounted on the substrate mounting unit 310 to be described later.

The gas injector 210 sprays the process gas toward the substrates W while all the substrates W are rotated while the substrate W mounted on the substrate seat 310 is rotated by the rotation of the substrate support 300. Allow the process gas to be supplied. The gas injection unit 210 may be configured with a plurality of nozzles (not shown) for injecting a process gas, and may be configured in various forms such as a showerhead and an injector type.

In addition, a plasma generating means (not shown) is provided inside the gas injection means 200 to excite the gas supplied into the chamber to the plasma and supply the plasma to the substrate.

At least one substrate W is mounted and supported on the substrate support 300. Here, the substrate W may be a wafer or a glass substrate. The substrate support 300 may be installed to rotate about the rotation axis by a rotation driving means (not shown) in the inner space of the chamber 100 or to be lifted by a lifting driving means (not shown).

At least one substrate seating portion 310 on which at least one substrate W is mounted may be provided on an upper surface of the substrate support 300. In general, the substrate mounting portion 310 may be formed in various structures so that the substrate W may be seated. For example, the substrate mounting portion 310 may have a concave shape in which the substrate W may be accommodated. have.

A heating member assembly 400 is provided below the substrate support 300 to maintain the process temperature and to heat at least one substrate to help the thin film deposition reaction on the substrate surface.

The heat generating member assembly 400 includes a heat generating member 410 for radiating radiant energy to heat at least one substrate and a protection member 420 for protecting the heat generating member from process gas. Hereinafter, the heating member assembly 400 will be described with reference to FIG. 2.

2 is a partial perspective view illustrating a partial region of a heat generating member assembly according to an embodiment of the present invention, and shows a heat generating member 410 and a protecting member 420 for protecting it.

The heating member 410 supplies radiant energy generated by the heating member to the substrate support 310 to heat the substrate W seated thereon. The substrate heating means includes an optical heating member such as a lamp heater and a coil. An electrothermal heating member such as may be used.

When the optical heating member is used as the heating member 410, a plurality of circular lamp heaters having different inner diameters and power applying means (not shown) for applying power to the lamp heater may be included. The plurality of lamp heaters may be arranged along the concentric circles on the same plane, the temperature may be controlled simultaneously by one power applying means, or may be independently connected to each of the plurality of power applying means. Accordingly, the substrate temperature can be uniformly controlled in response to the temperature difference that may occur on the substrate support having a large area.

For example, the edge region of the substrate support may be lower in temperature than the central region of the substrate support due to the effect of process gas exiting the chamber wall or exhaust vent. At this time, when the temperature of each heating zone is different, the heat loss can be compensated by additionally applying the power corresponding to the heat loss to the heat loss zone. Accordingly, by controlling the temperature difference that may occur on the substrate support, the substrate on the substrate support can be heated evenly and evenly. Such independent temperature control can be applied even in the case of using an electrothermal heating element.

The heat generating member 410 not only lowers the heating efficiency of the substrate support but also reduces the heating efficiency of the substrate support 300 as well as the substrate support 300 to be heated. There is a risk of thermal damage to other parts that are not needed. Therefore, the protection member 420 may be included to increase the thermal efficiency of the substrate support and to protect the surrounding chamber components.

The protection member 420 forms a space for accommodating the heat generating member, and includes a blocking member 422 for blocking the transmission of radiant energy emitted from the heat generating member, and covers an accommodation space of the blocking member 422 and is disposed on one surface thereof. It may include a cover member 421 is formed with a coating film.

Quartz or silicon carbide (SiC) may be used as a material forming the cover member 421 according to an embodiment of the present invention. Cover member 421 is preferably made of a transparent material such as quartz that can transmit the radiant energy of the heat generating member 410 in order to increase the efficiency of the radiant energy delivered to the substrate.

One surface of the cover member 421 may be formed with a coating film 430 made of corrosion-resistant yttrium oxide (Y 2 O 3 ) to protect the surface of the heat generating member assembly 400 from the process gas, cleaning gas or plasma. At this time, it is preferable that the cover member 421 coated with the coating film 430 maintain a thickness sufficient to efficiently transmit the radiant energy emitted from the heating member 410. When the cover member is made of a transparent material as described above, in order to maintain transparency, the thickness of the coating film is preferably 5 to 20 μm, and the radiation transmittance of the coating film is preferably 75 to 80%.

As a method of forming the coating film 430 on the upper surface of the cover member 421, a physical vapor deposition (PVD) method, a chemical vapor deposition (CVD) method, or a plasma spray coating method, which is generally used in a semiconductor process, is used. The coating film 430 may be coated on the entire upper surface of the cover member 421, or may be coated only on a partial region as necessary.

The blocking member 422 includes a lower blocking portion 422a provided in the lower region of the heat generating member 410 and a side blocking portion 422b provided in the side region of the heating member 410. Both the lower and side shields are made of an opaque material such as silicon carbide (SiC), nickel or titanium, or alloys thereof, which are heat-resistant materials that can withstand the heat generated by the heating element without transmitting radiation, or quartz It can be made by opaque treatment on the back surface.

The lower blocking portion 422a and the side blocking portion 422b prevent radiated energy generated from the heat generating member 410 from being discharged to the lower region and the side region of the outside of the heat generating member assembly 400, thereby generating a heat generating member 410. It protects adjacent parts or chamber walls from thermal damage, and at the same time serves to protect the heat generating member 410 from corrosion or wear caused by process gas or cleaning gas.

In addition, the heating member assembly 400 may include a guide ring 440 formed along the upper edge of the protection member 420 to protect the upper chamber wall of the heating member assembly 400 from the radiant energy emitted from the heating member 410. ) May be further included. The guide ring 440 may also be made of an opaque material, or the surface may be opaque so that radiant energy emitted from the heat generating member 420 cannot be transmitted.

Meanwhile, the reflective film 450 may be formed on the inner surfaces of the lower blocking part 422a and the side blocking part 422b (that is, the surface area in contact with the heat generating member) by using a material having excellent light reflection characteristics. Through this, as described above, the radiant energy transmitted in the lower direction of the heat generating member 410 may be transferred to the substrate support 300 positioned on the heat generating member 410 to increase the substrate heating efficiency, and the radiant energy may have different components or The transfer to the chamber wall can be minimized. In addition to treating the inner surface of the blocking member 422 with a reflective material, the reflective film 450 may be formed in various structures such as installing a reflective plate in the form of a thin plate.

The heating member 410 according to an embodiment of the present invention may be accommodated in the protection member 420 provided with a closed space to prevent contamination by the process gas, at this time, the protection member 420 By supplying an inert gas to the inside to increase the internal pressure of the heat generating member assembly 400, it is possible to more completely block the inflow of external process gas. Alternatively, the inert gas may be supplied to the upper portion of the protection member 410 through which the radiant energy is transmitted, thereby preventing a phenomenon in which the transmittance is decreased due to the formation of an abnormal film by the process gas. To this end, a gas supply means (not shown) for supplying an inert gas to the inside or outside of the protective member 420 may be provided separately.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is clearly understood that the same is by way of illustration and example only and is not to be taken by way of limitation and that those skilled in the art will recognize that various modifications and equivalent arrangements may be made therein. It will be possible. Accordingly, the true scope of protection of the present invention should be determined only by the appended claims.

W: substrate 10. substrate processing apparatus
100..Chamber 110..Chamber Lead
200..Gas injection unit 210..Gas injection unit
300. Substrate support 310. Substrate seat
400. Heating element assembly 410 Heating element
420. Protection member 421. Cover member
422 .. Barrier element 422a. Lower part
422b .. Side shield 430. Coating film
440..Guide ring 450..Reflective film
500. Susceptor drive means 600. Exhaust means

Claims (13)

A heat generating member assembly provided below the substrate support provided in the reaction space of the substrate processing apparatus,
A heat generating member emitting radiant energy to heat at least one substrate on the substrate support; And
It includes a protective member for transmitting the radiant energy emitted from the heating member and protects the heating member,
And at least a portion of the protective member is provided with a coating film having a corrosion resistance to protect the protective member from the process gas.
The method of claim 1,
The heating member is a heat generating member assembly, characterized in that made of at least one of an optical heating member and an electrothermal heating member.
The method of claim 1,
Wherein,
A blocking member forming a space for accommodating the heat generating member and blocking transmission of radiant energy emitted from the heat generating member; And
And a cover member covering the receiving space of the blocking member and having the coating film formed on one surface thereof.
The method of claim 3,
The cover member is a heating member assembly, characterized in that formed of a material of quartz or silicon carbide.
The method of claim 3,
The blocking member further comprises a reflecting means for reflecting the radiant energy of the heat generating member to the substrate support in the interior forming the receiving space.
The method of claim 1,
The protection member further comprises a guide ring provided along the upper edge of the cover member.
The method according to claim 1, wherein
Heat generating member assembly, characterized in that the transmittance of the coating film is 75 ~ 80%.
The method of claim 7, wherein
The coating layer is a heating element assembly, characterized in that made of yttrium oxide (Y 2 O 3 ).
The method of claim 7, wherein
Thickness of the coating film is a heating element assembly, characterized in that 5 ~ 20㎛.
A process chamber having a reaction space therein;
Gas injection means for injecting gas into the process chamber;
A substrate support installed in the process chamber and having a substrate seating portion formed on an upper surface thereof so that at least one substrate is seated thereon; And
Claim 1 to 6, wherein the substrate processing apparatus including any one of the heat generating member assembly is installed in the lower portion of the substrate support provided in the reaction space of the substrate processing apparatus.
The method of claim 10,
Heat generating member assembly, characterized in that the transmittance of the coating film is 75 ~ 80%.
12. The method of claim 11,
The coating layer is a heating element assembly, characterized in that made of yttrium oxide (Y 2 O 3 ).
12. The method of claim 11,
Thickness of the coating film is a heating element assembly, characterized in that 5 ~ 20㎛.





KR1020120032614A 2012-03-29 2012-03-29 Heating assembly and wafer processing apparatus using thereof KR20130110564A (en)

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KR1020120032614A KR20130110564A (en) 2012-03-29 2012-03-29 Heating assembly and wafer processing apparatus using thereof

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KR20130110564A true KR20130110564A (en) 2013-10-10

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