KR20130096966A

KR20130096966A - Light emitting device

Info

Publication number: KR20130096966A
Application number: KR1020120018601A
Authority: KR
Inventors: 김경화; 곽호상
Original assignee: 엘지이노텍 주식회사
Priority date: 2012-02-23
Filing date: 2012-02-23
Publication date: 2013-09-02

Abstract

The embodiment includes a first semiconductor layer doped with a first dopant, a second semiconductor layer doped with a second dopant different from the first dopant, and an active layer between the first and second semiconductor layers, wherein the first semiconductor layer A light emitting structure having a recess formed in a direction toward a second surface in contact with the active layer, the insulating layer disposed on the first surface of the recess, the recess inclined with the first surface The light emitting device includes a first electrode disposed on the second and third surfaces of the second insulating layer, the first electrode electrically connected to the first semiconductor layer, and a second electrode electrically connected to the second semiconductor layer.

Description

[0001]

The embodiment relates to a light emitting device.

LED (Light Emitting Diode) is a device that converts electrical signals into infrared, visible light or light using the characteristics of compound semiconductors. It is used in household appliances, remote controls, display boards, The use area of LED is becoming wider.

In general, miniaturized LEDs are made of a surface mounting device for mounting directly on a PCB (Printed Circuit Board) substrate, and an LED lamp used as a display device is also being developed as a surface mounting device type . Such a surface mount device can replace a conventional simple lighting lamp, which is used for a lighting indicator for various colors, a character indicator, an image indicator, and the like.

LED semiconductors are grown by a process such as MOCVD or molecular beam epitaxy (MBE) on a substrate such as sapphire or silicon carbide (SiC) having a hexagonal system structure.

In the active layer, the holes provided in the p-type semiconductor layer and the electrons provided in the n-type semiconductor layer recombine to generate light. LEDs are an important problem to improve the efficiency of light efficiency by improving the probability of recombination of holes and electrons in the active layer.

When the current is uniformly distributed in the p-type semiconductor layer and the n-type semiconductor layer, holes and electrons may be recombined in the active layer as a whole to maximize light efficiency.

Embodiments provide a light emitting device having an electrode structure in which current supplied to a p-type semiconductor layer is easily spread.

The light emitting device according to the embodiment includes a first semiconductor layer doped with a first dopant and a recess formed on a first surface, an active layer and the active layer on a second surface opposite to the first surface of the first semiconductor layer. A light emitting structure comprising a second semiconductor layer disposed on and doped with a second dopant different from the first dopant, an insulating layer disposed on the first side of the recess, and inclined with the first side of the recess. The display device may include a first electrode disposed on at least one of a second surface and the insulating layer and a second electrode disposed on the second semiconductor layer.

In the light emitting device according to the embodiment, the first electrode is disposed on the inner surface of the recess formed in the first semiconductor layer, and is supplied to the first semiconductor layer by not overlapping with the second electrode disposed in the second semiconductor layer. It is advantageous to increase the luminous efficiency by facilitating the diffusion of the current to actively combine the electrons and holes in the active layer.

1 is a perspective view showing a light emitting device according to an embodiment.
2 is a cross-sectional perspective view showing a cut surface of the light emitting device shown in FIG.
3 is an operation diagram showing an operation of the light emitting device shown in FIG.
4 is a perspective view showing an embodiment of a light emitting device package including the light emitting device shown in FIG.
5 is a perspective view illustrating a lighting device including a light emitting device according to the embodiment.
FIG. 6 is a cross-sectional view illustrating a cross section taken along line AA ′ of the lighting apparatus illustrated in FIG. 5.
7 is an exploded perspective view of a liquid crystal display including the light emitting device according to the first embodiment.
8 is an exploded perspective view of a liquid crystal display including the light emitting device according to the second embodiment.

Advantages and features of the embodiments, and methods for achieving them will be apparent with reference to the embodiments described below in detail with the accompanying drawings. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. To fully disclose the scope of the invention to those skilled in the art, and the invention is only defined by the scope of the claims. Like reference numerals refer to like elements throughout.

In the description of the embodiments, it is to be understood that each layer (film), region, pattern or structure may be referred to as being "on" or "under" a substrate, each layer It is to be understood that the terms " on "and " under" include both " directly "or" indirectly " do. In addition, the criteria for the top / bottom or bottom / bottom of each layer are described with reference to the drawings.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. In the present specification, the singular form includes plural forms unless otherwise specified in the specification. It is noted that the terms "comprises" and / or "comprising" used in the specification are intended to be inclusive in a manner similar to the components, steps, operations, and / Or additions.

Unless otherwise defined, all terms (including technical and scientific terms) used in the present specification may be used in a sense that can be commonly understood by those skilled in the art. Also, commonly used predefined terms are not ideally or excessively interpreted unless explicitly defined otherwise.

The thickness and size of each layer in the drawings are exaggerated, omitted, or schematically shown for convenience and clarity of explanation. Also, the size and area of each component do not entirely reflect actual size or area.

Further, the angle and direction mentioned in the description of the structure of the light emitting device in the embodiment are based on those shown in the drawings. In the description of the structure of the light emitting device in the specification, reference points and positional relationship with respect to angles are not explicitly referred to, refer to the related drawings.

Hereinafter, embodiments will be described in detail with reference to the drawings.

1 is a perspective view showing a light emitting device according to the embodiment, Figure 2 is a cross-sectional perspective view showing a cut surface of the light emitting device shown in FIG.

1 and 2, the light emitting device 100 may include a light emitting structure 160 on the support substrate 110 and the support substrate 110.

The support substrate 110 may be formed using a material having excellent thermal conductivity and may be formed of a conductive material, and may be formed using a metal material or a conductive ceramic.

The support substrate 110 may be formed in a single layer, or may be formed in a double structure or multiple structures.

In an embodiment, the support substrate 110 is described as having conductivity, but may not have conductivity, but is not limited thereto.

That is, when the support substrate 110 is formed of a metal material, for example, gold (Au), nickel (Ni), tungsten (W), molybdenum (Mo), copper (Cu), aluminum (Al), tantalum It may be formed of any one selected from (Ta), silver (Ag), platinum (Pt), and chromium (Cr), or may be formed of two or more alloys, and may be formed by stacking two or more different materials.

As such, the support substrate 110 may facilitate the emission of heat generated from the light emitting device 100 to improve the thermal stability of the light emitting device 100.

In addition, when the support substrate 110 is formed of a semiconductor material, for example, silicon (Si), germanium (Ge), gallium arsenide (GaAs), zinc oxide (ZnO), silicon carbide (SiC), silicon germanium (SiGe), gallium nitride (GaN), gallium oxide (Ga2O3) may be formed of a carrier wafer.

The support substrate 110 may have a light transmissive property. For example, the support substrate 110 may have a light transmissive property when silicon (Si) is formed to a predetermined thickness or less, but is not limited thereto. Do not.

The support substrate 110 may be formed of a material having high thermal conductivity. The refractive index of the support substrate 110 may be smaller than the refractive index of the light emitting structure 160 for light extraction efficiency.

In addition, the support substrate 110 may include a patterned sapphire substrate (PSS) structure on an upper surface thereof in order to increase light extraction efficiency, but is not limited thereto.

The support substrate 110 may be formed using an electrochemical metal deposition method or a bonding method using a eutectic metal.

The metal bonding layer 111 may be stacked on the support substrate 110, and thus the metal bonding layer 111 may undergo an electromigration phenomenon in which a valence electric field of a first electrode (not shown) moves during application of current. Form to minimize. In addition, the metal bonding layer 111 may include at least one of a metal material or an adhesive having excellent adhesion to the underlying material.

A diffusion barrier layer (not shown) may be formed on the metal bonding layer 111 to prevent the diffusion of the current, but is not limited thereto.

The metal bonding layer 111 or the diffusion barrier layer is, for example, copper (Cu), niobium (Nb), tin (Sn), indium (In), scandium (Sc), tantalum (Ta), vanadium (V), Silicon (Si), Silver (Ag), Gold (Au), Zinc (Zn), Antimony (Sb), Aluminum (Al), Germanium (Ge), Hafnium (Hf), Lanthanum (La), Magnesium (Mg), Manganese (Mn), Nickel (Ni), Palladium (Pd), Tungsten (W), Ruthenium (Ru), Molybdenum (Mo), Iridium (Ir), Rhodium (Rh), Tantalum (Ta), Zirconium (Zr) or The metal bonding layer 111 may be formed of a metal or an alloy including at least one of titanium (Ti). Therefore, the metal bonding layer 111 may be formed in a single layer or a multilayer structure.

The light emitting structure 160 may include an active layer 166 between the first semiconductor layer 162, the second semiconductor layer 164, and the first and second semiconductor layers 162 and 164.

The first semiconductor layer 162 may be formed of a semiconductor compound. For example, the first semiconductor layer 162 may be formed of a compound semiconductor, such as Group 3-5, Group 2-6, or the like, and may be doped with a first conductivity type dopant. .

For example, the first semiconductor layer 162 may be implemented as a p-type semiconductor layer to inject holes into the active layer 124. For example, the p-type semiconductor layer is a semiconductor material having a composition formula of InxAlyGa1-x-yN (0≤x≤1, 0≤y≤1, 0≤x + y≤1), for example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN and the like may be selected, and p-type dopants such as Mg, Zn, Ca, Sr, and Ba may be doped.

Here, the first semiconductor layer 162 may have a recess formed on a first surface (not shown) adjacent to the support substrate 110.

That is, the first semiconductor layer 162 may include a first surface (not shown) adjacent to the support substrate 110 and a second surface (not shown) opposite the first surface and in contact with the active layer 166. The recess of the first semiconductor layer 162 may be formed in the direction of the second surface on the first surface, but is not limited thereto.

In this case, the recess may have a trapezoidal shape as shown in FIG. 2, but is not limited thereto.

First, the recess is disposed between the first surface (not shown) and the first surface adjacent to the second surface of the first semiconductor layer 162 and faces each other at a predetermined inclination angle. Second and third surfaces (not shown) may be included, and the third and fourth surfaces may be symmetrical with respect to the first surface, may be asymmetrical, and are not limited thereto.

The active layer 166 may be disposed on the first semiconductor layer 162.

The active layer 166 may include a region where electrons and holes are recombined, transition to a low energy level as the electrons and holes recombine, and generate light having a corresponding wavelength.

The active layer 166 may be formed of, for example, a semiconductor material having a compositional formula of InxAlyGa (1-xy) N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ x + y ≦ 1). It can be formed into a double junction structure, a single well structure or a multiple well structure.

Accordingly, in the active layer 166, more electrons are collected at a lower energy level of the quantum well layer, and as a result, the probability of recombination of electrons and holes may be increased, thereby improving the luminous effect. It may also include a quantum wire structure or a quantum dot structure.

A conductive clad layer (not shown) may be formed on or under the active layer 166, and the conductive clad layer may be formed of a semiconductor having a band gap wider than the band gap of the barrier layer of the active layer. have. For example, the conductive clad layer may include GaN, AlGaN, InAlGaN, superlattice structure, or the like. In addition, the conductive clad layer may be doped with n-type or p-type.

The second semiconductor layer 164 may be formed on the active layer 166.

Here, the second semiconductor layer 164 may be formed of a semiconductor compound, for example, may be implemented as a compound semiconductor, such as Group 3-5, Group 2-6, and the second conductive dopant may be doped. Can be. For example, the n-type semiconductor layer may be implemented. The n-type semiconductor layer may be formed of any one of GaN-based compound semiconductors such as a GaN layer, an AlGaN layer, an InGaN layer, or the like, and may be doped with an n-type dopant.

The second semiconductor layer 164 is, for example, a semiconductor material having a compositional formula of InxAlyGa (1-xy) N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ x + y ≦ 1), for example InAlGaN, GaN, AlGaN, InGaN, AlN, InN, etc. may be selected, and n-type dopants such as Si, Ge, Sn, and the like may be doped.

Meanwhile, the light emitting structure 160 may include a third conductivity type semiconductor layer (not shown) on the second semiconductor layer 164 that is opposite in polarity to the second semiconductor layer 164. In addition, the first semiconductor layer 162 may be a P-type semiconductor layer, and the second semiconductor layer 164 may be implemented as an N-type semiconductor layer. Accordingly, the light emitting structure 160 may include at least one of an N-P junction, a P-N junction, an N-P-N junction, and a P-N-P junction structure.

The first semiconductor layer 162, the active layer 166, and the second semiconductor layer 164 may be formed of metal organic chemical vapor deposition (MOCVD), chemical vapor deposition (CVD), and plasma chemical vapor deposition. (PECVD; Plasma-Enhanced Chemical Vapor Deposition), Molecular Beam Epitaxy (MBE), Hydride Vapor Phase Epitaxy (HVPE), Sputtering, or the like. It does not limit to this.

In addition, the doping concentrations of the conductive dopants in the first semiconductor layer 122 and the second semiconductor layer 124 may be uniformly or non-uniformly formed. That is, the structure of the plurality of semiconductor layers may be variously formed, but is not limited thereto.

Unlike the above description, the first semiconductor layer 162 may include an n-type semiconductor layer, and the second semiconductor layer 164 may include a p-type semiconductor layer. That is, although the positions in which the first semiconductor layer 162 and the second semiconductor layer 164 are formed with respect to the active layer 166 may be changed, the first semiconductor layer 162 may include a p-type semiconductor layer. It is formed to be close to the support substrate 110.

The second electrode 180 may be disposed on an upper surface of the second semiconductor layer 164, and an uneven pattern (not shown) may be formed on a portion or the entire area of the upper surface of the second semiconductor layer 164. Do not put

The first electrode disposed between the support substrate 110 and the light emitting structure 160 may include a reflective electrode 130 and a transparent electrode 140.

The transparent electrode 140 may be disposed on a first partial surface (not shown) of the second and third surfaces of the recess and the first surface of the first semiconductor layer 162.

That is, the transparent electrode 140 is integrally formed on the first partial surface and a part of the second and third surfaces, and thus has at least one bend, and an inclination angle between the second, third and first surfaces. It may have the same inclination angle.

In this case, the inclination angle may be 30 to 80 degrees to facilitate the diffusion of the current supplied to the first semiconductor layer 162.

In addition, the transparent electrode 140 may be in contact with the insulating layer 150. Here, the insulating layer 150 may be disposed on portions of the second and third surfaces of the recess and the first surface and the transparent electrode 140 which are not disposed, and may be in contact with the transparent electrode 140. Can be.

In an embodiment, the insulating layer 150 is shown as being in contact with the side of the transparent electrode 140, at least a portion of the insulating layer 150 and the transparent electrode 140 may be in overlapping contact with each other, but not limited thereto. Do not.

In addition, the insulating layer 150 is disposed on a second partial surface (not shown) overlapping the second electrode 180, thereby preventing a current grouping of the current supplied to the first semiconductor layer 162. (CBL, Current Blocking Layer) can play a role.

That is, the insulation layer 150 may be formed so that at least a portion thereof overlaps with the second electrode 180 in the vertical direction, whereby the current is concentrated at the shortest distance between the second electrode 180 and the support substrate 110. The light emitting efficiency of the light emitting device 100 may be improved by alleviating the phenomenon.

The insulating layer 150 may be formed of at least one of an electrically insulating material, a material having lower electrical conductivity than the reflective electrode 130 or the metal bonding layer 111, and a material forming a Schottky contact with the first semiconductor layer 162. It may be formed using, for example, may include at least one of S aluminum oxide (Al2O3), silicon oxide (SiO2), silicon nitride (Si3N4), aluminum nitride (AlN) and titanium oxide (TiOx). .

Meanwhile, the insulation layer 150 may be formed between the reflective electrode 130 and the transparent electrode 140, but is not limited thereto.

Here, the transparent electrode 140 is in ohmic contact with the first semiconductor layer 162 so that power is smoothly supplied to the light emitting structure 160. The transparent electrode 140 may selectively use a transparent conductive layer and a metal. For example, indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), and indium aluminum zinc oxide (AZO) ), Indium gallium zinc oxide (IGZO), indium gallium tin oxide (IGTO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IrOx, RuOx, RuOx / ITO, nickel (Ni ), Platinum (Pt), ruthenium (Ru), iridium (Ir), rhodium (Rh), tantalum (Ta), molybdenum (Mo), titanium (Ti), silver (Ag), tungsten (W), copper (Cu ), Chromium (Cr), palladium (Pd), vanadium (V), cobalt (Co), niobium (Nb), zirconium (Zr), Ni / IrOx / Au, or Ni / IrOx / Au / ITO It can be implemented in a single layer or multiple layers.

In this case, the reflective electrode 130 is disposed between the transparent electrode 140 and the insulating layer 150 and the support substrate 110, so that some of the light generated from the active layer 166 is directed toward the support substrate 110. The light extraction efficiency of the light emitting device 100 may be improved by reflecting light toward the upper and side directions of the light emitting device 100.

Therefore, the reflective electrode 130 may be formed of a material having good reflectance. The reflective layer 130 may be formed of, for example, a metal or an alloy including at least one of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, or Hf. Alternatively, the metal or alloy may be formed in a multilayer using light transmitting conductive materials such as ITO, IZO, IZTO, IAZO, IGZO, IGTO, AZO, and ATO, and specifically, IZO / Ni, AZO / Ag, and IZO. / Ag / Ni, AZO / Ag / Ni, Ag / Cu, Ag / Pd / Cu and the like can be laminated.

In addition, the reflective electrode 130 may have a groove (not shown) formed in a portion corresponding to the recess, but is not limited thereto.

Meanwhile, the reflective electrode 130 and the transparent electrode 140 may be formed to have different widths, and may be excellent in bonding strength because they are formed through a simultaneous firing process.

In an embodiment, the widths of the reflective electrode 130 and the transparent electrode 140 have been described as being different from each other. However, the widths of the reflective electrode 130 and the transparent electrode 140 may be the same, but not limited thereto, and the shape of the transparent electrode 140 is not limited. .

Here, when the reflective electrode 130 and the transparent electrode 140 are vertically separated, the protective layer 120 contacts the first semiconductor layer 162 in contact with both sides of the reflective electrode 130 and the transparent electrode 140. Can be.

For example, the protective layer 120 may include at least one of a metal material and an insulating material. In the case of the metal material, the protective layer 120 uses a material having lower electrical conductivity than the material forming the transparent electrode 140. Power applied to the 140 may be prevented from being applied to the protective layer 120.

The protective layer 120 may include at least one of titanium (Ti), nickel (Ni), platinum (Pt), lead (Pb), rhodium (Rh), iridium (Ir), and tungsten (W). The protective layer 120 may be formed in multiple layers.

In this case, the thickness of the protective layer 120 may be 1 μm to 10 μm, and when the thickness is less than 1 μm, the process may be difficult. When the protective layer 120 is thicker than 10 μm, power may not be smoothly supplied to the transparent electrode 140.

3 is an operation diagram showing an operation of the light emitting device shown in FIG.

Referring to FIG. 3, the light emitting device 100 includes a first semiconductor layer 162 in which a current diffused by a first electrode, that is, a reflective electrode 130 and a transparent electrode 140, is electrically connected to the support substrate 110. When the current is supplied to the second semiconductor layer 164 through the second electrode 180, the active layer 166 emits light (not shown) by combining electrons and holes.

In this case, the light in the active layer 166 may be emitted in an omnidirectional direction (360 degree direction), which will be described as light emitted in the direction of the first electrode in the embodiment.

The first electrode may reflect incident light incident on the active layer 166 according to the inclination angles of the reflective electrode 130 and the transparent electrode 140.

The incident light and the reflected light are represented by solid and dashed lines in FIG. 3, and in the case of the vertical light emitting device, light may be emitted in the upper and lateral directions of the light emitting device 100, and thus the steering angle may be widened. .

In addition, the light emitting device 100 may easily spread current supplied to the first semiconductor layer 162 by the transparent electrode 140 having at least one bending.

That is, the transparent electrode 140 is configured to receive current from the portion in contact with the first surface of the first semiconductor layer 162 and the portion in contact with the second and third sides of the recess in the direction of the active layer 166. Since the diffusion may be easy, more electrons and holes may be generated in the active layer 166, and thus the light efficiency and the light extraction efficiency may be improved.

4 is a perspective view showing an embodiment of a light emitting device package including the light emitting device shown in FIG.

4 is a transparent perspective view illustrating a part of the light emitting device package. In the embodiment, the light emitting device package may be a top view type, but may be a side view type, but is not limited thereto.

Referring to FIG. 4, the light emitting device package 200 may include a light emitting device 210 and a body 220 in which the light emitting device 210 is disposed.

The body 220 may include a first partition 222 disposed in a first direction (not shown) and a second partition 224 disposed in a second direction (not shown) crossing the first direction. The first and second barrier ribs 222 and 224 may be integrally formed with each other, and may be formed by injection molding, an etching process, and the like.

That is, the first and second barrier ribs 222 and 224 may be formed of a resin material such as polyphthalamide (PPA), silicon (Si), aluminum (Al), aluminum nitride (AlN), AlOx, liquid crystal polymer (PSG, photo sensitive glass), polyamide 9T (PA9T), neogeotactic polystyrene (SPS), metal, sapphire (Al2O3), beryllium oxide (BeO), ceramic, and at least one printed circuit board (PCB) Can be formed.

The top shape of the first and second barrier ribs 222 and 224 may have various shapes such as triangles, squares, polygons, and circles, depending on the use and design of the light emitting device 210, but is not limited thereto.

In addition, the first and second partitions 222 and 224 form a cavity s in which the light emitting device 210 is disposed, and the cross-sectional shape of the cavity s may be formed in a cup shape, a concave container shape, or the like. The first and second partitions 222 and 224 constituting the cavity s may be inclined downward.

In addition, the planar shape of the cavity s may have various shapes such as triangles, squares, polygons, and circles, without being limited thereto.

First and second lead frames 213 and 214 may be disposed on the lower surface of the body 220, and the first and second lead frames 213 and 214 may be formed of a metal material, for example, titanium (Ti) or copper. (Cu), nickel (Ni), gold (Au), chromium (Cr), tantalum (Ta), platinum (Pt), tin (Sn), silver (Ag), phosphorus (P), aluminum (Al), It may include one or more materials or alloys of indium (In), palladium (Pd), cobalt (Co), silicon (Si), germanium (Ge), hafnium (Hf), ruthenium (Ru), and iron (Fe). .

In addition, the first and second lead frames 213 and 214 may be formed to have a single layer or a multilayer structure, and the present invention is not limited thereto.

Inner surfaces of the first and second barrier ribs 222 and 224 are formed to be inclined with a predetermined inclination angle with respect to any one of the first and second lead frames 213 and 214, and the light emitting device 210 according to the inclination angle The reflection angle of the light emitted may vary, and thus the directivity angle of the light emitted to the outside may be adjusted. Concentration of light emitted from the light emitting device 210 to the outside increases as the directivity of the light decreases, while concentration of light emitted from the light emitting device 210 to the outside decreases as the directivity of the light increases.

The inner surface of the body 220 may have a plurality of inclination angles, but is not limited thereto.

The first and second lead frames 213 and 214 are electrically connected to the light emitting device 210, and are connected to the positive and negative poles of an external power source (not shown), respectively, to emit light of the light emitting device 210. ) Can be powered.

In an embodiment, the light emitting device 210 is disposed on the first lead frame 213, and the second lead frame 214 is described as being spaced apart from the first lead frame 213. Die-bonded with the first lead frame 213 and wire-bonded by the second lead frame 214 and a wire (not shown), so that power may be supplied from the first and second lead frames 213 and 214.

Herein, the light emitting device 210 may be bonded to the first lead frame 213 and the second lead frame 214 with different polarities.

In addition, the light emitting device 210 may be wire-bonded or die-bonded to each of the first and second lead frames 213 and 214, and the connection method is not limited.

In the embodiment, the light emitting device 210 is described as being disposed on the first lead frame 213, but is not limited thereto.

In addition, the light emitting device 210 may be adhered to the first lead frame 213 by an adhesive member (not shown).

Here, an insulating dam 216 may be formed between the first and second lead frames 213 and 214 to prevent electrical shorts (shorts) of the first and second lead frames 213 and 214.

In an embodiment, the insulating dam 216 may be formed in a semicircular shape, but the embodiment is not limited thereto.

A cathode mark 217 may be formed in the body 220. The cathode mark 217 distinguishes the polarity of the light emitting device 210, that is, the polarity of the first and second lead frames 213 and 214, so that the cathode mark 217 is confused when the first and second lead frames 213 and 214 are electrically connected to each other. May be used to prevent this.

The light emitting device 210 may be a light emitting diode. The light emitting diode may be, for example, a colored light emitting diode emitting red, green, blue, or white light, or an ultraviolet (UV) emitting diode emitting ultraviolet light, but is not limited thereto. A plurality of light emitting devices 210 may be mounted on the frame 213, and at least one light emitting device 210 may be mounted on the first and second lead frames 213 and 214, respectively. The number and mounting positions of 210 are not limited.

The body 220 may include a resin 218 filled in the cavity s. That is, the resin material 18 may be formed in a double molding structure or a triple molding structure, but is not limited thereto.

In addition, the resin material 218 may be formed in a film form, and may include at least one of a phosphor and a light diffusing material, and a translucent material that does not include the phosphor and the light diffusing material may be used. Do not.

FIG. 5 is a perspective view illustrating a lighting device including a light emitting device according to an embodiment, and FIG. 6 is a cross-sectional view illustrating the lighting device of FIG.

Hereinafter, in order to describe the shape of the lighting apparatus 300 according to the embodiment in more detail, the longitudinal direction (Z) of the lighting apparatus 300, the horizontal direction (Y) perpendicular to the longitudinal direction (Z), and the length The height direction X perpendicular to the direction Z and the horizontal direction Y will be described.

That is, FIG. 6 is a cross-sectional view of the lighting apparatus 300 of FIG. 5 cut in the plane of the longitudinal direction Z and the height direction X, and viewed in the horizontal direction Y. FIG.

5 and 6, the lighting device 300 may include a body 310, a cover 330 fastened to the body 310, and a closing cap 350 positioned at both ends of the body 310. have.

The light emitting device array 340 is fastened to the lower surface of the body 310, and the body 310 is conductive so that heat generated from the light emitting device package 344 can be discharged to the outside through the upper surface of the body 310. And it may be formed of a metal material having an excellent heat dissipation effect.

The light emitting device array 340 may include a light emitting device package 344 and a substrate 342.

The light emitting device package 344 may be mounted on the substrate 342 in a multicolored or multi-row array to form an array, and may be mounted at the same interval or may be mounted at various separation distances as necessary to adjust brightness. The substrate 342 may be a metal core PCB (MCPCB) or a PCB made of FR4.

The cover 330 may be formed in a circular shape to surround the lower surface of the body 310, but is not limited thereto.

Here, the cover 330 may protect the light emitting device array 340 from foreign matters.

In addition, the cover 330 may prevent glare of light generated from the light emitting device package 344, and a prism pattern may be formed on at least one of an inner surface and an outer surface of the cover 330. In addition, a phosphor may be applied to at least one of an inner surface and an outer surface of the cover 330.

On the other hand, since the light generated from the light emitting device package 344 is emitted to the outside through the cover 330, the cover 330 should have excellent light transmittance, and has sufficient heat resistance to withstand the heat generated by the light emitting device package 344. The cover 330 is preferably formed of a material including polyethylene terephthalate (PET), polycarbonate (PC), polymethyl methacrylate (PMMA), or the like. .

Closing cap 350 is located at both ends of the body 310 may be used for sealing the power supply (not shown). In addition, the closing cap 350 is formed with a power pin 352, the lighting device 300 according to the embodiment can be used immediately without a separate device to the terminal from which the existing fluorescent lamps are removed.

7 is an exploded perspective view of a liquid crystal display including the light emitting device according to the first embodiment.

7 is an edge-light method, the liquid crystal display device 400 may include a liquid crystal display panel 410 and a backlight unit 470 for providing light to the liquid crystal display panel 410.

The liquid crystal display panel 410 may display an image using light provided from the backlight unit 470. The liquid crystal display panel 410 may include a color filter substrate 412 and a thin film transistor substrate 414 facing each other with the liquid crystal interposed therebetween.

The color filter substrate 412 may implement a color of an image displayed through the liquid crystal display panel 410.

The thin film transistor substrate 414 is electrically connected to the printed circuit board 418 on which a plurality of circuit components are mounted through the driving film 417. The thin film transistor substrate 414 may apply a driving voltage provided from the printed circuit board 418 to the liquid crystal in response to a driving signal provided from the printed circuit board 418.

The thin film transistor substrate 414 may include a thin film transistor and a pixel electrode formed of a thin film on another substrate of a transparent material such as glass or plastic.

The backlight unit 470 may include a light emitting element array 420 for outputting light, a light guide plate 430 for changing the light provided from the light emitting element array 420 into a surface light source form, and providing the light to the liquid crystal display panel 410. Reflective sheet reflecting the light emitted to the light guide plate 430 to the plurality of films 450, 466, 464 and the light guide plate 430 to uniform the luminance distribution of the light provided from the light source 430 and to improve vertical incidence ( 440).

The light emitting device array 420 may include a PCB substrate 422 such that a plurality of light emitting device packages 424 and a plurality of light emitting device packages 424 may be mounted to form an array.

On the other hand, the backlight unit 470 is a diffusion film 466 for diffusing light incident from the light guide plate 430 toward the liquid crystal display panel 410, and a prism film 450 for condensing the diffused light to improve vertical incidence. ), And may include a protective film 464 for protecting the prism film 450.

8 is an exploded perspective view of a liquid crystal display including the light emitting device according to the second embodiment.

However, the parts shown and described in Fig. 7 are not repeatedly described in detail.

8, the liquid crystal display device 500 may include a liquid crystal display panel 510 and a backlight unit 570 for providing light to the liquid crystal display panel 510.

Since the liquid crystal display panel 510 is the same as that described with reference to FIG. 7, a detailed description thereof will be omitted.

The backlight unit 570 includes a plurality of light emitting element arrays 523, a reflective sheet 524, a lower chassis 530 in which the light emitting element arrays 523 and the reflective sheet 524 are accommodated, and an upper portion of the light emitting element arrays 523. It may include a diffusion plate 540 and a plurality of optical film 560 disposed in the.

The light emitting device array 523 may include a PCB substrate 521 such that a plurality of light emitting device packages 522 and a plurality of light emitting device packages 522 are mounted to form an array.

The reflective sheet 524 reflects the light generated from the light emitting device package 522 in the direction in which the liquid crystal display panel 510 is positioned to improve light utilization efficiency.

On the other hand, the light generated from the light emitting element array 523 is incident on the diffusion plate 540, the optical film 560 is disposed on the diffusion plate 540. The optical film 560 may include a diffusion film 566, a prism film 550, and a protective film 564.

Here, the lighting device 300 and the liquid crystal display device (400, 500) may be included in the lighting system, in addition to the light emitting device package, and the purpose of the lighting may also be included in the lighting system.

The features, structures, effects and the like described in the embodiments are included in at least one embodiment of the present invention and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects, and the like illustrated in the embodiments may be combined or modified with respect to other embodiments by those skilled in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

In addition, the above description has been made with reference to the embodiment, which is merely an example, and is not intended to limit the present invention. Those skilled in the art to which the present invention pertains will be illustrated as above without departing from the essential characteristics of the present embodiment. It will be appreciated that various modifications and applications are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.

Claims

A first semiconductor layer doped with a first dopant, a first semiconductor layer having a recess formed on the first surface, an active layer on the second surface opposite the first surface of the first semiconductor layer, and disposed on the active layer and the first dopant A light emitting structure including a second semiconductor layer doped with a second dopant different from the second semiconductor layer;
An insulating layer disposed on the first surface of the recess;
A first electrode disposed on at least one of the second surface inclined from the first surface of the recess and the insulating layer; And
And a second electrode disposed on the second semiconductor layer.

The method of claim 1,
And a support substrate electrically supporting the light emitting structure and electrically connected to the first electrode.

3. The method of claim 2,
The first electrode,
A reflective electrode disposed on the support substrate and overlapping the insulating layer; And
And a transparent electrode disposed between the reflective electrode and the first semiconductor layer and disposed on the second surface and the first partial surface of the first surface.

The method of claim 3, wherein
The transparent electrode,
In contact with the side of the insulating layer,
Or a light emitting device superimposed on at least a portion of the insulating layer.

The method of claim 3, wherein
The thickness of the transparent electrode,
Equal to the thickness of the insulating layer,
Or a light emitting device thicker than the thickness of the insulating layer.

The method of claim 3, wherein
The transparent electrode,
The light emitting device having the same bending angle as the inclination angle between the second surface and the first surface.

The method according to claim 6,
The inclination angle is,
30 to 80 degrees light emitting device.

The method of claim 3, wherein
The reflective electrode,
A light emitting device in overlapping contact with the transparent electrode and the insulating layer.

The method of claim 3, wherein
The reflective electrode,
And a groove corresponding to the recess in a surface adjacent to the support substrate.

The method of claim 3, wherein
Wherein the insulating layer
A light emitting device disposed on a second partial surface of the first semiconductor layer that vertically overlaps the second electrode in addition to the first partial surface.

3. The method of claim 2,
And a protective layer disposed between the support substrate and the first semiconductor layer and surrounding a circumference of the first electrode.

3. The method of claim 2,
And a metal bonding layer between the support substrate and the first electrode.

The method of claim 1,
On the second semiconductor layer,
A light emitting device in which the uneven pattern is formed.

The method of claim 1,
At least one of the first and second electrodes,
A light emitting element consisting of a plurality of layers.

An illumination system comprising the light emitting device of any one of claims 1-14.