KR20130072572A - Etching resist composition for screen printing - Google Patents
Etching resist composition for screen printing Download PDFInfo
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- KR20130072572A KR20130072572A KR1020110140058A KR20110140058A KR20130072572A KR 20130072572 A KR20130072572 A KR 20130072572A KR 1020110140058 A KR1020110140058 A KR 1020110140058A KR 20110140058 A KR20110140058 A KR 20110140058A KR 20130072572 A KR20130072572 A KR 20130072572A
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- South Korea
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- resist composition
- etching resist
- screen printing
- binder resin
- xylenol
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/80—Etching
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0041—Photosensitive materials providing an etching agent upon exposure
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/06—Silver salts
- G03F7/063—Additives or means to improve the lithographic properties; Processing solutions characterised by such additives; Treatment after development or transfer, e.g. finishing, washing; Correction or deletion fluids
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/12—Production of screen printing forms or similar printing forms, e.g. stencils
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
- G03F7/2043—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means with the production of a chemical active agent from a fluid, e.g. an etching agent; with meterial deposition from the fluid phase, e.g. contamination resists
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
Abstract
The present invention relates to an etching resist composition for screen printing. More particularly, the present invention relates to an etching resist composition for screen printing that can form a fine pattern by additionally including a liquid plasticizer as a main solvent, and further facilitates pattern formation and removal.
Description
The present invention relates to an etching resist composition for screen printing, and more particularly to an etching resist composition for screen printing that can form a pattern of high resolution.
Conventionally, in order to fabricate thin film transistors and wirings, patterns or lines of thin film transistors and wirings are formed by a photolithography method using an exposure apparatus. In such a photolithography method, an etching method by a photo process is used after forming a photoresist on a metal layer. However, since the photo equipment for performing such a photo process is expensive equipment, not only the manufacturing cost increases but also the manufacturing process is complicated. In addition, since the exposure area of the exposure apparatus is limited in the photolithography process of the display element, in order to manufacture a large-area display element, it is necessary to divide the screen and proceed the photo process several times. Therefore, there is a problem in that productivity is lowered because it is difficult not only to accurately match the position at the time of processing the divided region but also to repeat a plurality of photo processes. In order to overcome this problem, a printing method which is a pattern forming method using a photoresist has been proposed. For example, Korean Patent No. 10-0585871 discloses a printing method and a process of a printing equipment. The above-mentioned patent does not describe a resist composition, which can be inferred to use a general resist composition. However, since the general resist composition does not have excellent viscosity, a separate curing process is required, and thus, an expensive device is required, thereby having a high manufacturing cost.
Description of the crosslinking-curable resin composition using a printing method is disclosed. However, since an exposure process for curing the photopolymerizable composition is included, an expensive exposure apparatus is required, and thus the manufacturing cost, which is an advantage of the printing method, cannot be realized. In addition, the Republic of Korea Registration No. 10-623227 proposes a method for laminating a fine circuit wiring using an offset printing technique, but there is a problem in that a process for curing the photosensitive material is required, as in the registration and notification patent.
In order to solve these problems, thermosetting resin compositions have been introduced, but these resin compositions have a problem that it is difficult to form a fine pattern having a line width of 200 μm or less thereafter and damage the substrate during the peeling process.
An object of the present invention is to provide an etching resist composition for screen printing that is easy to form fine patterns without requiring photocuring and thermal curing.
An object of the present invention is to provide an etching resist composition for screen printing that is excellent in resistance to etchant and easy to peel off.
1. An etching resist composition for screen printing containing a liquid plasticizer as a main solvent.
2. In the above 1, the main solvent is 50% by weight or more of the total solvent etching resist composition for screen printing.
3. In the above 1, the main solvent is a phthalate compound, citric acid compound, fatty acid ester, polyalkylene glycol, glycerol ester, vegetable oil (vegetable oil), modified vegetable oil, allyl phosphate ester, di At least one selected from the group consisting of alkylether diesters, tricarboxylic acid esters, epoxidized oils, epoxidized esters, polyesters, polyglycol diesters, allylether diesters, aliphatic diesters, alkylether monoesters and dicarboxylic acid esters Screening etching resist composition.
4. In the above 1, the main solvent has a boiling point of 200 to 400 ℃ screen printing etching resist composition.
5. according to the above 1, the etching resist composition for screen printing further comprising a binder resin.
6. In the above 5, the binder resin is a screen printing etching resist composition comprising a novolak-based binder resin.
7. In the above 6, the novolak-based binder resin is a screen printing etching resist composition of the reaction of the aromatic alcohol and aldehyde.
8. In the above 7, the aromatic alcohol is phenol, o-cresol, m-cresol, p-cresol, o-ethylphenol, m-ethylphenol, p-ethylphenol, o-butylphenol, m-butylphenol, p -Butylphenol, 2,3-Xylenol, 2,4-Xylenol, 2,5-Xylenol, 2,6-Xylenol, 3,4-Xylenol, 3,5-Xyle Nol, 2,3,5-trimethylphenol, 3,4,5-trimethylphenol, p-phenylphenol, resorcinol, hydroquinone, hydroquinone monomethyl ether, pyrogallol, phloroglucinol, hydroxydiphenyl, bisphenol An etching resist composition for screen printing which is at least one selected from the group consisting of A, gallic acid, gallic acid ester, α-naphthol and β-naphthol.
9. In the above 7, wherein the aldehyde is at least one selected from the group consisting of formaldehyde, paraformaldehyde, acetoaldehyde, benzaldehyde and phenylaldehyde screen printing etching resist composition.
10. In the above 5, the weight average molecular weight of the binder resin is 2,000 to 30,000 screen printing etching resist composition.
11. In the above 5, the weight ratio of the binder resin and the main solvent is 4: 6 to 6: 4 screen printing etching resist composition.
12. The etching resist composition of claim 1, wherein the viscosity is 10,000 to 100,000 cps.
Since the etching resist composition of this invention can be screen-printed, the pattern formation process is simple.
Since the etching resist composition of the present invention does not undergo photocuring, an expensive exposure apparatus is not required.
Since the resist is formed by a drying process rather than thermosetting, the etching resist composition of the present invention does not need to use a strong peeling agent as in the case of using a thermosetting resist, and can prevent serious damage to the substrate in the peeling process.
The etching resist composition of the present invention has a low spreadability and is capable of forming a fine pattern.
The etching resist composition of the present invention has excellent resistance to etchant, and is easy to remove after forming a pattern.
The present invention relates to an etching resist composition for screen printing, which can form a fine pattern by including a liquid plasticizer as a main solvent, and is easy to form and remove.
Hereinafter, the present invention will be described in detail.
The etching resist composition for screen printing of the present invention is characterized by using a liquid plasticizer as the main solvent.
In the present invention, the main solvent means a solvent component having a content of at least 50% by weight, preferably at least 70% by weight, more preferably at least 90% by weight relative to the total solvent weight.
Solvents conventionally used for screen printing etch resist compositions have limitations in lowering the spreadability of the composition. Therefore, when such a composition is printed in a pattern shape, the pattern does not maintain its shape and spreads laterally, making it difficult to form a fine pattern, and thus, there is a problem in that it is not suitable for forming a high resolution pattern required recently.
However, the etching resist composition for screen printing of the present invention solves this problem by using a liquid plasticizer as the main solvent. According to the present invention, an etching resist composition for screen printing using a liquid plasticizer as a main solvent has a low spreadability of the composition, which is very easy to form a fine pattern, and thus is advantageous for high resolution pattern formation.
The main solvent according to the present invention may be used without limitation as long as it is a liquid plasticizer capable of dissolving the binder resin used in the resist composition. For example, phthalate compound; Citric acid compounds such as citric acid or citric acid ester; Fatty acid esters; Polyalkylene glycols such as polyethylene glycol or polypropylene glycol; Glycerol esters; Vegetable oils; Modified vegetable oils; Allyl phosphate esters; Dialkyl ether diesters; Tricarboxylic acid esters; Epoxidized oils; Epoxidized esters; Polyester; Polyglycol diesters; Allyl ether diesters; Aliphatic diesters; Alkyl ether monoesters; And dicarboxylic acid esters, or the like, may be used alone or in combination of two or more thereof. In consideration of environmentally friendly aspects, citric acid compounds, fatty acid esters, polyalkylene glycols, glycerol esters, vegetable oils, and modified vegetable An oil etc. can be used individually or in mixture of 2 or more types, More preferably, 2,2,4-trimethyl-1,3-pentanediol diisobutyrate (2,2,4-trimethyl-1,3- pentanediol diisobutyrate), acetyl tributyl citrate, and the like may be used alone or in combination, respectively, but is not limited thereto. In the liquid plasticizer, alkyl or alkylene means independently alkyl or alkylene having 1 to 5 carbon atoms.
It is preferable that the main solvent which concerns on this invention has a boiling point of 200-400 degreeC. The etching resist composition is exposed to air for a long time at a high temperature during the resist formation process, it is preferable that the boiling point has the above range in view of the main solvent is not easily evaporated or volatilized under such an environment.
The etching resist composition for screen printing of the present invention further includes a binder resin, and any binder resin may be used without limitation as long as it is a binder resin that does not require photocuring for screen printing. For example, an acrylate binder resin, a novolak-type binder resin, etc. are mentioned.
Examples of acrylate-based binder resins are binder resins or copolymer resins composed of one or more of the compounds described below. Examples of the b) acrylate-based binder resins include alkyl glycidyl ether (meth) acrylates having 2 to 8 carbon atoms, phenylglycidyl ether (meth) acrylates, (meth) acrylates, and polyfunctional (meth) acrylates. The rate etc. are mentioned, It is preferable to use polyfunctional (meth) acrylate among them.
Specific examples of the alkyl glycidyl ether (meth) acrylate having 2 to 8 carbon atoms include (meth) acrylate, ethylglycidyl ether (meth) acrylate, propylglycidyl ether (meth) acrylate, and butylglycidyl. A diether (meth) acrylate etc. are mentioned.
In addition, specific examples of the (meth) acrylate include tricyclodecyl (meth) acrylate, phenyl (meth) acrylate, benzyl (meth) acrylate, 2 or 4-methoxy phenyl (meth) acrylate, 2 or 4-methoxy benzyl (meth) acrylate, 2 or 4-ethoxy phenyl (meth) acrylate, 2 or 4-ethoxy benzyl (meth) acrylate, 2 or 4-chloro phenyl (meth) acrylate, 2 Or 4-chloro benzyl (meth) acrylate, 2 or 4-bromo phenyl (meth) acrylate, 2 or 4-bromo benzyl (meth) acrylate, and the like.
Specific examples of the multifunctional (meth) acrylate include ethylene glycol di (meth) acrylate, triethylene glycol di (meth) acrylate, 1,3-butanediol di (meth) acrylate, and neopentyl glycol di (meth). ) Acrylate, 1,6-hexanediol di (meth) acrylate, trimethylol tri (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, ditrimethylol Propane tetra (meth) acrylate, dipentaerythritol tetra (meth) acrylate, dipentaerythritol penta (meth) acrylate, dipentaerythritol hexyl (meth) acrylate, etc. are mentioned. The compounds described above may use one kind or two or more kinds.
In the present specification, (meth) acrylate refers to both acrylates and methacrylates, or optionally acrylates and methacrylates.
Novolac binder resins are the reaction products of aromatic alcohols and aldehydes.
Examples of the aromatic alcohols include phenol, o-cresol, m-cresol, p-cresol, o-ethylphenol, m-ethylphenol, p-ethylphenol, o-butylphenol, m-butylphenol and p-butylphenol , 2,3-xylenol, 2,4-xylenol, 2,5-xylenol, 2,6-xylenol, 3,4-xylenol, 3,5-xylenol, 2 , 3,5-trimethylphenol, 3,4,5-trimethylphenol, p-phenylphenol, resorcinol, hydroquinone, hydroquinone monomethyl ether, pyrogallol, phloroglucinol, hydroxydiphenyl, bisphenol A, gallic acid , Gallic acid ester, α-naphthol, β-naphthol and the like can be used alone or in combination of two or more thereof.
For example, formaldehyde, paraformaldehyde, acetoaldehyde, benzaldehyde, phenylaldehyde and the like may be used alone or in admixture of two or more thereof.
In the binder resin according to the present invention, the acrylate-based binder resin is inexpensive, but it is necessary to undergo a high temperature thermosetting process for pattern formation. In the case of using a novolak-based binder resin, a high temperature thermosetting process is not required, and a pattern may be formed through a drying process to evaporate only a solvent, and is more preferable than an acrylate-based binder resin in view of easy removal of the pattern. . Moreover, novolak-type binder resin is excellent also in resistance to an etchant, and is useful as a binder resin of an etching resist.
The binder resin according to the present invention preferably has an appropriate weight average molecular weight, for example, may have a weight average molecular weight of 2,000 to 30,000. Having a weight average molecular weight in the above range, it is possible to maintain a constant thickness without damaging the resist film during the pattern formation process, there is an advantage that the resist residue does not occur after the removal process.
The etching resist composition for screen printing of the present invention may further include additives known in the art as necessary without departing from the scope of the present invention. Such additives include flow control agents, hydrophobic materials, hydrophobic materials, drying inhibitors, silane coupling agents, and the like.
The rheology control agent has the function of improving the straightness of the pattern when screen printing by making the pattern have excellent mechanical strength. Examples of rheology modifiers are hexylamine, heptylamine, octylamine, nonylamine, decylamine, aniline, 2-, 3- or 4-methylaniline, 4-nitroaniline, 1- or 2-naphthyl amine, ethylenediamine , Tetramethylenediamine, hexamethylenediamine, hexamethylenetetramine, 4,4'-diamino-1,2-diphenylethane, 4,4'-diamino-3,3'-dimethyldiphenylmethane, 4, 4'-diamino-3,3'-diethyldiphenylmethane, dibutylamine, dipentylamine, dihexylamine, diheptylamine, dioctylamine, dinonylamine, didecylamine, N-methylaniline, Piperidine, diphenylamine, triethylamine, trimethylamine, tripropylamine, tributylamine, tripentylamine, trihexyl amine, triheptylamine, trioctylamine, trinonylamine, tridecylamine, methyldibutyl Amine, methyldipentylamine, methyldihexylamine, methyldicyclohexylamine, methyldiheptylamine, methyl dioctylamine, methyldinonylamine, methyldi Silamine, ethyldibutylamine, ethyldipentylamine, ethyldihexylamine, ethyldiheptylamine, ethyldioctylamine, ethyldinonylamine, ethyldidecylamine, dicyclohexylmethylamine, tris [2- (2 -Methoxyethoxy) ethyl] amine, triisopropanolamine, N, N-dimethylaniline, 2,6-isopropylaniline, imidazole, pyridine, 4-methylpyridine, 4-methylimidazole, b Pyridine, 2,2'-dipyridylamine, di-2-pyridylketone, 1,2-di (2-pyridyl) ethane, 1,2-di (4-pyridyl) ethane, 1,3- Di (4-pyridyl) propane, 1,2-bis (2-pyridyl) ethylene, 1,2-bis (4-pyridyl) ethylene, 1,2-bis (4-pyridyloxy) ethane, 4 , 4-dipyridyl sulfide, 4,4'-dipyridyl disulfide, 1,2-bis (4-pyridyl) ethylene, 2,2'-dipicolylamine, 3,3'-dipicolylamine , Tetramethylammonium hydroxide, tetraisopropylammonium hydroxide, tetrabutylammonium hydroxide and the like.
The hydrophobic material serves to prevent the penetration of the etchant into the etching resist film formed on the substrate. Examples of such hydrophobic materials include emulsions of polytetrafluoroethylene.
The anti-drying agent is for preventing the ink from drying in the inkjet nozzle to block the nozzle, glycols such as ethylene glycol, propylene glycol, diethylene glycol, triethylene glycol, polyethylene glycol; glycerin; Ethers of polyhydric alcohols such as diethylene glycol monobutyl ether; Acetates; Thioglycols; Amino acids such as glycine, methylglycine, proline, alanine, phenylalanine can be used.
The silane coupling agent is for improving adhesion between the etching resist composition and the substrate, and commonly known silane compounds such as beta- (3,4-epoxycyclohexyl) -ethyltrimethoxy silane, gamma-glycidoxypropyl Methyldiethoxy silane, gamma-glycidoxypropyl trimethoxy silane, gamma-glycidoxyoxy triethoxy silane, 3-methacryloxypropyl trimethoxy silane, 3-methacryloxypropyl methyldimethoxy silane, 3 -Methacryloxypropyl methyldiethoxy silane, 3-methacryloxypropyl triethoxy silane, N- (2-aminoethyl) -3-aminopropyl methyl dimethoxy silane, N- (2-aminoethyl) -3- Aminopropyl trimethoxy silane, N- (2-aminoethyl) -3-aminopropyl triethoxy silane, 3-aminopropyl trimethoxy silane, 3-aminopropyl triethoxy silane, N-phenyl-3-amino Propyl Triethoxy Silane, Non Nyltrichloro silane, vinyl trimethoxy silane, vinyl triethoxy silane, 3-chloropropyl trimethoxy silane, 3-mercaptopropyl trimethoxy silane and the like can be used. The silane coupling agent is a chelating compound, such as N-hydroxyethyl-ethylenediaminotriacetic acid, nitrotriacetic acid, hydroxyethylidene-1,1-diphosphate, aminotrimethylene phosphoric acid, ethylenediamino-tetramethylene phosphoric acid , Diethylenetriamino pentamethylene phosphoric acid, diethylenetriamino pentamethylene phosphoric acid, hexamethylenediaminotetraethylene phosphoric acid, and the like may be used instead or in combination.
Other additives include cationic, anionic, amphoteric or nonionic surfactants for controlling the surface tension of the ink and the contact angle on the substrate; Foaming inhibitors that are silicone or fluorine-based surfactants; Ultraviolet light absorbers such as benzotriazole or benzophenone; Light stabilizers such as phenols or amines; Microbial inhibitors such as chloromethylphenol; Chelating agents such as EDTA; Sulfurous acid-based oxygen absorber; thermosetting inhibitors such as p-anisole, hydroquinone, pyrocatechol, t-butylcatechol, phenothiazine; Additives such as thixotropic agents may be added depending on the specific use of the composition.
The additive according to the present invention is preferably included in 0 to 10% by weight relative to the total weight of the composition.
In the etching resist composition for screen printing of the present invention, the binder resin and the liquid plasticizer main solvent may be mixed in various mixing ratios as necessary without particular limitation as long as the binder resin is all dissolved in the main solvent. This may be appropriately adopted by those skilled in the art in some cases, for example, and may have a mixed weight ratio of binder resin: main solvent = 4: 6-6: 4. The fine pattern formation performance is the best within the mixed weight ratio range.
The etching resist composition for screen printing of the present invention may have an appropriate viscosity for printing properties and stability of the pattern. The viscosity of the composition may be appropriately adopted depending on various conditions such as the type of the substrate, for example, may have a viscosity of 10,000 to 100,000 cps, but is not limited thereto. It may have excellent printing properties and pattern stability in the viscosity range.
The etching resist composition for screen printing of the present invention may be applied to have a predetermined pattern on a substrate using screen printing methods used in the art. After coating in a predetermined pattern, a resist pattern is formed by evaporating the solvent through natural drying or heat treatment.
Hereinafter, preferred examples are provided to aid the understanding of the present invention, but these examples are merely illustrative of the present invention and are not intended to limit the scope of the appended claims, which are within the scope and spirit of the present invention. It is apparent to those skilled in the art that various changes and modifications can be made to the present invention, and such modifications and changes belong to the appended claims.
Example 1-2 and Comparative example 1-2
To the ingredients and compositions (units by weight) described in Table 1 below, it was mixed and stirred at 50-80 ° C. for 12 hours. After completion of the stirring, defoaming for 1-2 hours with an ultrasonicator to prepare an etching resist composition for screen printing.
The viscosity of the prepared composition was averaged after three measurements at 25 ° C. 50 rpm using a DV-III Ultra Rheometer (Brookfield, Inc.).
Binder Resin: Meta / Osso Cresol Novolak Resin (S55-series, Nanokor)
Solvent A: 2,2,4-trimethyl-1,3-pentanediol diisobutyrate (boiling point: 286 ° C.)
Solvent B: Acetyl tributyl citrate (boiling point: 343 ° C)
Solvent C: Propylene glycol monomethyl ether acetate (boiling point: 146 ° C.)
Solvent D: Ethyl lactate (boiling point: 151 ° C.)
Experimental Example
Solar cell in which SiN is deposited on silicon by etching pattern of etch resist composition prepared in Example and Comparative Example using pattern of 200 mesh in pattern width / inter-pattern spacing = 1mm / 1mm to 100㎛ / 100㎛ It was formed on a substrate. The substrate was heat-treated at 150 ° C. for 3 minutes in an infrared conveyor dryer to form a pattern. After performing an etching process with an etchant made of an inorganic acid, the pattern stability, limit resolution, and etch resistance of the pattern made of resist were Evaluated.
1. Pattern stability and marginal resolution
The pattern size of the plate making was printed on the Si substrate from 1mm to 100㎛ using a screen printing machine, and the pattern formed after drying with the infrared dryer was observed through optical microscopy to observe the pattern formation and the limit resolution.
○: pattern formation
△: spread after pattern formation
×: pattern can not be formed
2. Etch resistance
The residual ratio was measured and evaluated by measuring the pattern area after etching to the pattern area before etching.
○: 95% or more pattern residual ratio
(Triangle | delta): 90% or more of pattern residual ratio
×: less than 90% pattern residual ratio
Referring to Table 2, it can be seen that the embodiments using the liquid plasticizer as the main solvent have superior pattern forming ability, limit resolution, and etch resistance than the comparative examples.
Claims (12)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020110140058A KR20130072572A (en) | 2011-12-22 | 2011-12-22 | Etching resist composition for screen printing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020110140058A KR20130072572A (en) | 2011-12-22 | 2011-12-22 | Etching resist composition for screen printing |
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| Publication Number | Publication Date |
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| KR20130072572A true KR20130072572A (en) | 2013-07-02 |
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| KR1020110140058A KR20130072572A (en) | 2011-12-22 | 2011-12-22 | Etching resist composition for screen printing |
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| KR (1) | KR20130072572A (en) |
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