KR20130070692A - Thinner composition for removing photosensitive resin or anti-reflective coating and method of manufacturing semiconductor device or thin film transistor-liquid crystal device using the same - Google Patents

Abstract

PURPOSE: Photosensitive resin or thinner composition for removing reflection barrier are provided to have excellent solubility about various photoresist films, bottom antireflective coating (BARC), and under layer and improve coating performance of photoresist by including tetrahydrofurfuryl alcohol, alkyl lactate, or/and propylene glycol alkyl ether under optimal condition. CONSTITUTION: Photosensitive resin or thinner composition for removing reflection barrier comprises tetrahydrofurfuryl alcohol, and more than one selected from alkyl lactate and propylene glycol alkyl ether. The tetrahydrofurfuryl alcohol of 1-50 weight% is included about the total weight of thinner composition. More than one selected from the group consisting of alkyl lactate and propylene glycol alkyl ether are included as 50-99 weight% about the total weight of thinner composition. A manufacturing method of semiconductor device or thin film transistor liquid crystal display device comprises the following steps. Reflection barrier is removed by spraying photosensitive resin or thinner composition for removing reflection barrier on substrate coated with photosensitive resin.

Description

THINNER COMPOSITION FOR REMOVING PHOTOSENSITIVE RESIN OR ANTI-REFLECTIVE COATING AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE OR THIN FILM TRANSISTOR-LIQUID CRYSTAL DEV THE SAME}

The present invention relates to a thinner composition for removing a photosensitive resin or an anti-reflection film and a method of manufacturing a semiconductor device or a thin film transistor liquid crystal display device using the same.

The photolithography process of manufacturing a semiconductor device is a process of applying a photosensitive resin composition on a wafer, transferring a previously designed pattern, and composing an electronic circuit through an etching process appropriately according to the transferred pattern. This is one of the very important tasks.

The photolithography process includes (1) an application step of uniformly applying the photosensitive resin composition to the surface of the wafer, and (2) a soft baking step of evaporating the solvent from the applied photosensitive film to attach the photosensitive film to the surface of the wafer. (3) an exposure step of exposing the photoresist film by repeatedly and sequentially reducing and projecting the circuit pattern on the mask by using a light source such as ultraviolet ray, and (4) an exposure step of exposing the photoresist onto the photoresist film; Development process to selectively remove parts of different physical properties such as solubility difference by using developer, (5) hard baking process to adhere the photoresist film remaining on the wafer to the wafer more closely after development (6) an etching process for etching certain portions according to the developed photosensitive film pattern, and (7) unnecessary after the process. It proceeds to the peeling process etc. which remove a photosensitive film.

In the photolithography process, the photocoating film is supplied onto the wafer and the substrate is rotated to spread the surface evenly by centrifugal force, so that the photoresist film is gathered at the edge portion and the rear surface of the substrate due to the centrifugal force to form a small spherical material. The spherical material may be peeled off during transfer of the substrate after the baking process to cause particles in the apparatus, or may cause defocus during exposure.

This unnecessary photosensitive material causes equipment contamination and lowers the yield in the manufacturing process of the semiconductor device. Therefore, spray nozzles are installed above and below the edge portion and the rear portion of the substrate, and the organic solvent component is formed at the edge portion and the rear portion through the nozzle. It is removed by spraying a thinner composition consisting of.

Factors that determine the performance of the thinner composition include dissolution rate and volatility. The dissolution rate of the thinner composition is very important because it determines how quickly and effectively the photosensitive resin can be dissolved and removed. Specifically, in the rinse of the edge portion, it may have a smooth processing cross section only if it has an appropriate dissolution rate, and if the dissolution rate is too high, a photoresist attack may appear in the rinse of the photoresist applied to the substrate. On the contrary, when the dissolution rate is too low, a partially dissolved photosensitive film tail flow phenomenon called tailing may appear in the rinse of the photosensitive film applied to the substrate. In particular, due to the large diameter of the substrate due to the high integration and high density of the semiconductor integrated circuit in recent years, in the rinsing process using the abandonment of the rotation speed it is inevitable to reduce the rotation speed (rpm). In such a rinse process, when the substrate does not have an appropriate dissolution rate in the rocking phenomenon of the substrate due to low rotation and the contact speed of the sprayed thinner composition, a bounding phenomenon occurs and the use of unnecessary thinner composition increases. Due to the large diameter of such a substrate, a strong dissolution rate of thinner is required in a low rotation rinse process more than a conventional high rotation rinse process.

In addition, the thinner composition is required to easily volatilize and remain on the surface of the substrate after removing the photosensitive resin. When the volatility is too low and the thinner composition does not volatilize, the remaining thinner itself may act as a contaminant in various processes, in particular, subsequent etching, and thus may act as a problem of lowering the yield of the semiconductor device. On the contrary, if the volatility is too high, the substrate may be rapidly cooled and the thickness variation of the applied photoresist film may be increased, and the volatilization may easily volatilize into the air during use, contaminating the cleanliness itself.

Currently, i-line photoresist, KrF, ArF, EUV, KrF antireflection film, ArF antireflection film, etc., which are used as photoresist in semiconductor lithography process, all have different main components. Therefore, it is necessary to control the composition content of the organic solvent in order to improve solubility and coatability of all of them.

Republic of Korea Patent Publication No. 2001-0077101 is a thinner composition using a solvent such as ether acetate, ether, lactate and the like is used to remove the unnecessary photosensitive film of the main portion, the flue portion, the back portion of the substrate. However, when butyl acetate is added in the solvent, it is useful for removing unnecessary photoresist, but there is a problem in that the process for reducing photoresist before soft baking is less effective.

Republic of Korea Patent Publication No. 2001-0077101

SUMMARY OF THE INVENTION An object of the present invention is to provide a thinner composition having excellent solubility for various photoresist films, lower antireflection films (BARCs), and underlayers, and having an appropriate volatilization, which shows excellent coating performance in applying photoresists. It is to.

In order to achieve the above object, there is provided a thinner composition for removing a photosensitive resin or anti-reflective coating containing tetrahydrofurfuryl alcohol, and containing at least one selected from the group consisting of alkyl lactate and propylene glycol alkyl ether.

In another aspect, the present invention is a semiconductor device comprising the step of removing the photosensitive film by spraying a photosensitive resin containing a tetrahydrofurfuryl alcohol, alkyl lactate and propylene glycol alkyl ether or a thinner composition for removing the anti-reflection film on the substrate coated with the photosensitive resin Or it provides a method of manufacturing a thin film transistor liquid crystal display device.

The thinner composition for removing the photosensitive resin or the anti-reflection film according to the present invention is used on the edge portion and the back portion of the substrate used in the method of manufacturing a semiconductor device or a thin film transistor liquid crystal display device to efficiently remove unnecessary photoresist film in a short time. It has excellent solubility and EBR characteristics for various photoresists and anti-reflective coatings (BARC).

In particular, since it has excellent solubility and EBR characteristics with respect to EUV photoresist and underlayer, it can be used to remove photoresist and anti-reflection film used in semiconductor process with design rule of 20 nm or less.

In addition, it shows excellent characteristics when used in the rework process of the photoresist-coated wafers. In addition to the anti-reflective film removal process, the thinner composition is first applied to improve the coating performance of the photoresist before applying the photoresist. In the process, the amount of photoresist can be reduced, and the performance can be improved.

In addition, the thinner composition for removing the photosensitive resin or the anti-reflective coating of the present invention has no toxicity to the human body, has no discomfort due to the smell, and has excellent work stability, low corrosiveness, and contamination of the production facilities such as cup holders and clogging of the discharge port. It does not occur and can improve productivity.

Hereinafter, the present invention will be described in detail.

The present invention provides a thinner composition for removing a photosensitive resin or an anti-reflective coating containing tetrahydrofurfuryl alcohol and comprising at least one selected from the group consisting of alkyl lactate and propylene glycol alkyl ether.

At this time, the photosensitive resin or the anti-reflective coating thinner composition, 1 to 50% by weight of tetrahydrofurfuryl alcohol, based on the total weight of the composition, one selected from the group consisting of alkyl lactate and propylene glycol alkyl ether It is preferable to contain the above at 50-99 weight%.

In this case, when the tetrahydrofurfuryl alcohol is contained in less than 1% by weight based on the total weight of the composition, solubility in various photoresists such as EUV photoresist and lower anti-reflective coating (BARC) is lowered to reduce the RRC (reducing resist coating) effect When the content of the tetrahydrofurfuryl alcohol exceeds 50% by weight, the surface tension is increased so that it is not evenly spread during the application of the photoresist, and the tailing phenomenon of the photoresist occurs in the EBR (edge bead removing) process. It is undesirable to have residues during the rework process.

In addition, it is preferable to include at least 50 to 99% by weight of one or more selected from the group consisting of the alkyl lactate and propylene glycol alkyl ether, and if the above range is satisfied, the degree of volatilization in the edge bead removal (EBR) process It is possible to suppress the tailing phenomenon of the photoresist that may occur as the fall, and to reduce the RRC (Reducing Resist Coating) effect that occurs when the solubility falls.

In addition, the thinner composition comprises tetrahydrofurfuryl alcohol, alkyl lactate and propylene glycol alkyl ether, and 10 to 50% by weight of tetrahydrofurfuryl alcohol and 30 to 80% by weight of alkyl lactate based on the total weight of the thinner composition. And 10 to 40% by weight of propylene glycol alkyl ether, more preferably 10 to 30% by weight of tetrahydrofurfuryl alcohol, 40 to 60% by weight of alkyl lactate and 10 to 30% by weight of propylene glycol alkyl ether. It is good to be In this case, when the above-mentioned range is satisfied, the tailing phenomenon of the photoresist may be suppressed due to the decrease in volatilization in the edge bead removing process (EBR), and RRC (Reducing Resist Coating) occurs when the solubility is decreased. It can suppress that an effect becomes low.

The alkyl group of the alkyl lactate is preferably an alkyl group having 1 to 10 carbon atoms, but is preferably one or more selected from the group consisting of ethyl lactate, propyl lactate and butyl lactate, but is not limited thereto.

The alkyl group of the propylene glycol alkyl ether is preferably an alkyl group having 1 to 10 carbon atoms, and preferably at least one selected from the group consisting of propylene glycol monomethyl ether and propylene glycol monoethyl ether, but is not limited thereto.

Furthermore, it is preferable to further include a hydrocarbon glycol ether as an additive in the thinner composition, wherein the additive preferably has a molecular weight of 200 or less. In addition, the hydrocarbon-based glycol ether is preferably included in the range of 10 to 500ppm relative to the total weight of the thinner composition, and when the content of the additive satisfies the above-mentioned range, EBR characteristics are improved and defects that may occur in the process are reduced. do.

In addition, the thinner composition for removing the photosensitive resin or the anti-reflection film has excellent solubility in various photoresist films, lower anti-reflection films (BARC), and underlayers, and has excellent EBR characteristics, rework characteristics, and photoresist coating performance. Can be improved.

In particular, in the case of i-line, KrF, ArF and EUV photoresist, since the basic structure of the photosensitive resin to be composed is different, it is necessary to adjust the composition content of the organic solvent to improve solubility and coatability of all of them. The thinner composition for removing the photosensitive resin or the anti-reflection film satisfies this.

Furthermore, the thinner composition for removing the photosensitive resin or the anti-reflection film has excellent solubility in the main components of the photoresist and the anti-reflection film having a high polarity structure, and thus, the EBR process, the lower wafer cleaning process, and the upper surface of the wafer before the photoresist coating. After the pretreatment process, the cup holder of the coater is not contaminated or clogged.

The present invention is spraying a thinner composition for removing a photosensitive resin or an anti-reflective coating film containing the at least one selected from the group consisting of tetrahydrofurfuryl alcohol, alkyl lactate and propylene glycol alkyl ether on a substrate to which the photosensitive resin is applied To provide a method of manufacturing a semiconductor device or a thin film transistor liquid crystal display device comprising the step of removing the photosensitive film.

Specifically, the thinner composition may be sprayed on the edge portion and the rear portion of the substrate to which the photosensitive resin composition is applied to remove unnecessary photoresist, and at this time, the thinner composition is preferably sprayed at an injection amount of 5 to 50 cc / min. Subsequently, the process may be manufactured by general techniques known in the art in the manufacture of semiconductor devices or thin film transistor liquid crystal display devices.

Hereinafter, the present invention will be described in detail by way of examples.

However, the following examples are illustrative of the present invention, and the present invention is not limited to the following examples.

<Examples 1 to 10 and Comparative Examples 1 to 5>

Tetrahydro furfuryl alcohol (THFA), propylene glycol monomethyl ether (PGME), ethyl lactate (EL), propylene glycol monomethyl ether acetate (PGMEA), Butyl acetate (n-Butyl acetate, n-BA) and an additive (Hydrocarbon-based glycol ether surfactant) were added in the composition ratios shown in Table 1 below, and then stirred at a speed of 500 rpm for 1 hour at room temperature (25 °) for photosensitivity. The thinner composition for resin or anti-reflective film removal was manufactured.

THFA
(weight%) PGME
(weight%) EL
(weight%) PGMEA
(weight%) n-BA
(weight%) additive
(Weight ppm) Example 1 25 25 50 - - 10 ppm Example 2 35 15 50 - - 10 ppm Example 3 15 35 50 - - 10 ppm Example 4 35 25 40 - - 10 ppm Example 5 18.75 12.5 68.75 - - 10 ppm Example 6 30 - 70 - - 10 ppm Example 7 30 70 - - - 10 ppm Example 8 25 25 50 - - - Example 9 30 - 70 - - - Example 10 30 70 - - - - Comparative Example 1 - 30 70 - - 10 ppm Comparative Example 2 - 30 - 50 20 10 ppm Comparative Example 3 - 20 30 50 - 10 ppm Comparative Example 4 - - 40 50 10 10 ppm Comparative Example 5 - 30 50 - 20 10 ppm THFA: tetrahydrofurfuryl alcohol
PGME: propyleneglycol monomethylether
EL: ethyl lactate
PGMEA: propyleneglycol monomethylether acetate
n-BA: Butyl acetate (n-Butyl acetate)
Additive: Glycol ether surfactant

<Experimental Example 1>

Reducing Resist Coating (RRC) performance of the five photoresists of Table 2 was tested using the thinner compositions of Examples 1-10 and Comparative Examples 1-5. According to the recipe shown in Table 3, each thinner composition was applied before the five photoresists were applied to the 8-inch silicon oxide substrate, and then an RRC process was performed to measure the distribution and consumption of the photoresist according to the thinner. In the case of BARC, the RRC process was performed using each thinner composition without heat treatment. Table 4 below shows a result of photoresist consumption after coating 0.5cc thinner on an 8 inch wafer and applying 1.0cc for PR1 and 2, 0.8cc for PR3 and 4, and 0.4cc for Underlayer, respectively.

division Composition type Resin series Film thickness (占 퐉) PR 1 PR for ArF Acrylate 0.18 PR 2 PR for ArF-immersion Acrylate 0.12 PR 3 PR for EUV Acrylate 0.08 PR 4 PR for EUV Acrylate 0.07 Underlayer Underlayer for EUV - 0.01

step Time (sec) Speed (rpm) The accelerator (rpm / sec) Dispensing (cc) One 2.5 0 10,000 0.5 (Thinner) 2 1.5 900 10,000 0 3 9.5 2000 10,000 0 4 3.0 600 10,000 0.5 to 1 (PR) 5 5.0 1500 10,000 0 6 10.0 1000 10,000 0

PR 1 (1.0cc) PR 2 (1.0cc) PR 3 (0.8 cc) PR 4 (0.8 cc) Underlayer (0.4cc) Example 1 ◎ ◎ ◎ ◎ ◎ Example 2 ◎ ◎ ◎ ○ ◎ Example 3 ◎ ◎ ○ ◎ ○ Example 4 ◎ ◎ ○ ○ ○ Example 5 ◎ ◎ ◎ ◎ ○ Example 6 ◎ ◎ ○ ○ ◎ Example 7 ◎ ◎ ○ ○ ◎ Example 8 ◎ ◎ ◎ ○ ◎ Example 9 ◎ ◎ ○ ○ ◎ Example 10 ◎ ◎ ○ ○ ○ Comparative Example 1 ○ △ △ △ △ Comparative Example 2 ○ ○ △ △ △ Comparative Example 3 ○ ○ △ △ △ Comparative Example 4 ○ ○ △ △ △ Comparative Example 5 ○ △ △ △ △ ◎: 99 to 100% of the photoresist is applied to the wafer when the photoresist is applied after the thinner 0.5cc is applied to the 8-inch wafer RRC results
○: RRC results When the photoresist is applied to the wafer 8 inches and thinner 0.5cc and the photoresist is applied to the wafer less than 97 or less than 99%
(Triangle | delta): When the photoresist is apply | coated to a wafer more than 95% and less than 97% at the time of photoresist after apply | coating thinner 0.5cc on 8 inch wafer by RRC result
X: When RRC result is applied thinner 0.5cc on 8 inch wafer and photoresist is applied on wafer below 95%

As shown in Table 4, the thinner compositions of Examples 1 to 10 showed excellent RRC performance for all photoresist films, while the thinner compositions of Comparative Examples 1 to 5 did not improve the coating performance of the photoresist, and the coating properties. It can be seen that the fall significantly. In addition, compared to the thinner compositions of Comparative Examples 1 to 5, it can be seen that the thinner compositions of Examples 1 to 10 show excellent effects in PR 3, 4 and Underlayer. In addition, the thinner compositions of Examples 1 to 10 maintained an equally excellent form even when the rotational speed (rpm) condition of the RRC was changed. Through this, it can be seen that the thinner compositions of Examples 1 to 10 of the present invention show the same performance under various conditions, and are more stable than the conventional thinner compositions against changes in process conditions.

<Experimental Example 2>

After applying the photosensitive resin composition shown in Table 2 to an 8-inch silicon oxide substrate, the thinner compositions of Examples 1 to 10 and Comparative Examples 1 to 5 were subjected to the edge portion under the conditions described in Table 5. Edge bead removal (EBR) experiment was conducted to remove unnecessary photoresist. The thinner compositions of Examples 1 to 10 and Comparative Examples 1 to 5 were supplied from a pressure vessel equipped with a pressure gauge, and the pressure was 1 kgf, and the flow rate of the thinner composition from the EBR nozzle was 10 to 30 cc / min. It was set as. Thereafter, the removal performance of the unnecessary photoresist film was evaluated using an optical microscope and a scanning electron microscope, and the results are shown in Table 6 below.

division Rotational speed (rpm) Time (sec) Dispense condition 300 ~ 2000 7 Spin coating Adjustable according to the photoresist thickness 15 EBR Condition 1 2000 20 EBR Condition 2 2000 25 Drying conditions 1300 6

PR 1 PR 2 PR 3 PR 4 BARC Example 1 ◎ ◎ ◎ ◎ ◎ Example 2 ◎ ◎ ○ ○ ◎ Example 3 ◎ ◎ ○ ○ ◎ Example 4 ◎ ◎ ◎ ○ ◎ Example 5 ◎ ◎ ◎ ○ ○ Example 6 ◎ ◎ ○ ○ ○ Example 7 ◎ ○ ○ ○ ○ Example 8 ◎ ◎ ◎ ○ ◎ Example 9 ◎ ◎ ○ ○ ○ Example 10 ◎ ○ ○ ○ ○ Comparative Example 1 ○ ○ ○ △ ○ Comparative Example 2 ○ ○ △ △ △ Comparative Example 3 ○ ○ △ △ △ Comparative Example 4 ○ ○ △ △ △ Comparative Example 5 ○ △ ○ △ △ ◎: EBR line uniformity for the photoresist film after EBR is constant
○: Good linear state with EBR line uniformity of 75% or more on the photoresist film after EBR
(Triangle | delta): The shape of the edge part after EBR was distorted by the thinner melt action.
X: Tailing phenomenon occurs at the edge film after EBR

As shown in Table 6, the photosensitive resins or anti-reflective film removal thinner compositions of Examples 1 to 10 according to the present invention exhibit excellent EBR performance for all photoresist films. On the other hand, the thinner compositions of Comparative Examples 1 to 5 were found to be significantly less removable than the thinner composition for removing the photosensitive resin or the anti-reflective coating of the present invention according to Examples 1 to 10 in suppressing penetration into the photosensitive film. . As a result, it can be seen that the EBR performance of many kinds of photoresist and lower antireflection film (BARC) is satisfied.

In addition, even when changing the rotational speed (rpm) conditions of the EBR was maintained equally good form. This means that the thinner composition according to the present invention is not only effective under specific conditions, but also exhibits the same performance under various conditions, and is more stable than the conventional thinner composition with respect to changes in process conditions.

<Experimental Example 3>

Coating uniformity of the five photoresists of Table 2 was tested using the photosensitive resins or the antireflective film removal thinner compositions of Examples 1 to 10 and Comparative Examples 1 to 5. After applying the photoresist on the 8-inch silicon oxide substrate according to the recipe as shown in Table 7 below, including 12 points in the X-shaped 1 inch, 2 inches, 3 inches distance from the center of the wafer and the center of the wafer A total of 13 locations were measured to confirm whether the photoresist was uniformly applied and the results are shown in Table 8 below.

step Time (sec) Speed (rpm) The accelerator (rpm / sec) Dispensing (cc) One 5 0 10,000 2.0 (Thinner) 2 5 700 10,000 0 3 3 2,000 10,000 0 4 20 2,000 10,000 0.30 (PR) 5 5 700 10,000 0 6 5 0 10,000 0

PR 1 PR 2 PR 3 PR 4 BARC Example 1 ◎ ◎ ◎ ◎ ◎ Example 2 ◎ ◎ ◎ ○ ○ Example 3 ◎ ○ ○ ◎ ◎ Example 4 ◎ ◎ ◎ ○ ◎ Example 5 ◎ ◎ ◎ ○ ◎ Example 6 ◎ ◎ ◎ ○ ○ Example 7 ◎ ◎ ○ ◎ ○ Example 8 ◎ ◎ ◎ ○ ◎ Example 9 ◎ ◎ ◎ ○ ○ Example 10 ◎ ◎ ○ ○ ○ Comparative Example 1 ○ ○ △ △ △ Comparative Example 2 ○ ○ △ △ ○ Comparative Example 3 ○ ○ △ △ ○ Comparative Example 4 ○ ○ △ △ ○ Comparative Example 5 ○ ○ △ △ ○ ◎: when the standard deviation of the coating film thickness is 1% or less
○: when the standard deviation of the coating film thickness is 2% or less
(Triangle | delta): When the standard deviation of coating film thickness is 3% or less
X: Standard deviation of the coating film thickness is more than 3%

<Experimental Example 4>

The rework performance of the five photoresists of Table 2 was tested using the thinner compositions for removing the photosensitive resins or the anti-reflective coating films of Examples 1 to 10 and Comparative Examples 1 to 5. According to the recipe as shown in Table 9 below, five photoresists were applied to an 8-inch silicon oxide substrate, and then the rebaking process was performed on each wafer using the thinner composition. In the case of BARC, the rework process was performed using the thinner composition for removing the photosensitive resin or anti-reflective film of Examples 1 to 10 and Comparative Examples 1 to 5 in a state in which heat treatment was not performed after coating.

The reworked silicon oxide substrate was evaluated using a surface scan (surface scan, TOPCON, WM-1500) and the results are shown in Table 10 below.

step Time (sec) Speed (rpm) The accelerator (rpm / sec) Dispensing (cc) One 2 0 10,000 0 2 2 1000 10,000 0 3 4 1000 10,000 2.0 (Thinner) 4 9.5 2500 10,000 0 5 0 0 10,000 0

PR 1 PR 2 PR 3 PR 4 BARC Example 1 ◎ ◎ ◎ ◎ ◎ Example 2 ◎ ◎ ◎ ○ ○ Example 3 ◎ ○ ○ ○ ◎ Example 4 ◎ ◎ ○ ◎ ○ Example 5 ◎ ◎ ○ ○ ◎ Example 6 ◎ ◎ ○ ◎ ○ Example 7 ◎ ◎ ○ ◎ ○ Example 8 ◎ ◎ ○ ◎ ◎ Example 9 ◎ ◎ ○ ◎ ○ Example 10 ◎ ◎ ○ ○ ○ Comparative Example 1 ○ △ ○ △ ○ Comparative Example 2 ○ ○ △ △ △ Comparative Example 3 ○ ○ ○ ○ ○ Comparative Example 4 ○ ○ △ ○ △ Comparative Example 5 ○ ○ △ △ △ (Double-circle): When the number of reworked silicic oxide surface particles is less than 1000 as a result of surface scan
(Circle): When the number of reworked silicicon oxide surface particles as a result of surface scanning is 1000 or more and less than 2000
(Triangle | delta): When the number of reworked silicon oxide surface particles as a result of a surface scan is 2000 or more and less than 3000
X: Surface scan shows that the number of reworked silicon oxide surface particles is 3000 or more

Claims (10)

A thinner composition for removing a photosensitive resin or an anti-reflection film containing tetrahydrofurfuryl alcohol and comprising at least one selected from the group consisting of alkyl lactate and propylene glycol alkyl ether. The method according to claim 1, wherein 1 to 50% by weight of tetrahydrofurfuryl alcohol, 50 to 99% by weight of at least one selected from the group consisting of alkyl lactate and propylene glycol alkyl ether based on the total weight of the thinner composition A thinner composition for removing a photosensitive resin or an anti-reflective coating, characterized in that: The method according to claim 1, wherein the thinner composition comprises tetrahydrofurfuryl alcohol, alkyl lactate and propylene glycol alkyl ether, 10 to 50% by weight of tetrahydrofurfuryl alcohol, alkyl lactate 30 to 30 based on the total weight of the thinner composition Thinner composition for removing a photosensitive resin or an anti-reflection film, comprising 80% by weight and 10 to 40% by weight of propylene glycol alkyl ether. The thinner composition for removing a photosensitive resin or an anti-reflection film according to claim 1, wherein the alkyl group of the alkyl lactate is an alkyl group having 1 to 10 carbon atoms. The thinner composition according to claim 1, wherein the alkyl lactate is at least one selected from the group consisting of ethyl lactate, propyl lactate and butyl lactate. The thinner composition according to claim 1, wherein the alkyl group of the propylene glycol alkyl ether is an alkyl group having 1 to 10 carbon atoms. The thinner composition of claim 1, wherein the propylene glycol alkyl ether is at least one selected from the group consisting of propylene glycol monomethyl ether and propylene glycol monoethyl ether. The thinner composition according to claim 1, further comprising a hydrocarbon glycol ether as an additive to the thinner composition. A method of manufacturing a semiconductor device or a thin film transistor liquid crystal display device comprising the step of spraying the photosensitive resin or the anti-reflective film thinner composition of any one of claims 1 to 8 onto a substrate coated with the photosensitive resin to remove the photosensitive film. The method of manufacturing a semiconductor device or a thin film transistor liquid crystal display device according to claim 9, wherein the photosensitive resin or the thinner composition for removing an antireflection film is sprayed at 5 to 50 cc / min.