KR20130064407A - Light emitting diode - Google Patents

Light emitting diode Download PDF

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Publication number
KR20130064407A
KR20130064407A KR1020110130998A KR20110130998A KR20130064407A KR 20130064407 A KR20130064407 A KR 20130064407A KR 1020110130998 A KR1020110130998 A KR 1020110130998A KR 20110130998 A KR20110130998 A KR 20110130998A KR 20130064407 A KR20130064407 A KR 20130064407A
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KR
South Korea
Prior art keywords
layer
pad
light emitting
emitting diode
semiconductor structure
Prior art date
Application number
KR1020110130998A
Other languages
Korean (ko)
Inventor
정재혜
이준희
김창연
유종균
Original Assignee
서울옵토디바이스주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 서울옵토디바이스주식회사 filed Critical 서울옵토디바이스주식회사
Priority to KR1020110130998A priority Critical patent/KR20130064407A/en
Priority to PCT/KR2012/010436 priority patent/WO2013085255A1/en
Publication of KR20130064407A publication Critical patent/KR20130064407A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

The present invention relates to a light emitting diode. According to the present invention, a conductive substrate; A semiconductor structure layer provided on the conductive substrate and including an active layer; A pad pattern provided on the semiconductor structure layer, wherein the pad pattern includes at least one bonding pad provided on one edge of a surface of the semiconductor structure layer; And at least one current spreading pad spaced apart from the bonding pads.

Description

[0001] LIGHT EMITTING DIODE [0002]

The present invention relates to a light emitting diode.

The light emitting diode is basically a PN junction diode which is a junction between a P-type semiconductor and an N-type semiconductor.

When the P-type semiconductor and the N-type semiconductor are bonded to each other by applying a voltage to the P-type semiconductor and the N-type semiconductor, the light emitting diode (LED) Type semiconductor and the electrons of the N type semiconductor migrate toward the P type semiconductor, and the electrons and the holes move to the PN junction.

The electrons moved to the PN junction are combined with holes as they fall from the conduction band to the valence band. At this time, energy corresponding to a height difference between the conduction band and the electromotive band, that is, an energy difference, is emitted, and the energy is emitted in the form of light.

Such a light emitting diode is a semiconductor device that emits light and has characteristics such as eco-friendliness, low voltage, long lifespan, and low cost. In the past, light emitting diodes have been widely applied to simple information display such as display lamps and numbers. In particular, with the development of information display technology and semiconductor technology, it has been used in various fields such as display fields, automobile headlamps and projectors.

Such a light emitting diode may include a horizontal light emitting diode and a vertical light emitting diode.

The vertical type light emitting diode is superior in current dispersion performance to the horizontal type light emitting diode, the horizontal type light emitting diode is formed on a growth substrate for growing an epilayer, and the vertical type light emitting diode is formed on a metal substrate It has an advantage of excellent heat dissipation performance by using a metal substrate having a high thermal conductivity.

However, the vertical light emitting diode has a problem in that current is concentrated in the pad region, thereby decreasing luminous efficiency and shortening device life.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a light emitting diode in which current diffusion is uniformly distributed throughout the light emitting region.

In addition, another object of the present invention is to provide a light emitting diode having a uniform current spreading and an improved lifetime.

In order to achieve the above object, according to an aspect of the present invention, a conductive substrate; A semiconductor structure layer provided on the conductive substrate and including an active layer; A pad pattern provided on the semiconductor structure layer, wherein the pad pattern includes at least one bonding pad provided on one edge of a surface of the semiconductor structure layer; And at least one current spreading pad spaced apart from the bonding pads.

The pad pattern may further include at least one extension part connecting the bonding pad and the current spreading pad.

The current spreading pad may be provided on an edge other than one edge of a surface of the semiconductor structure layer.

The current spreading pad may be provided on an inner side of a surface of the semiconductor structure layer.

The semiconductor structure layer may include a second type semiconductor layer provided between the conductive substrate and the active layer and a first type semiconductor layer provided between the active layer and the pad pattern.

The light emitting diode may further include a current blocking pattern provided between the semiconductor structure layer and the conductive substrate.

The current blocking pattern may be located at least under the bonding pad and the current spreading pad.

The light emitting diode further includes a bonding metal layer between the current blocking pattern and the conductive substrate, and further includes an ohmic reflective metal pattern between the conductive substrate and the bonding metal layer, wherein the current blocking pattern has an open area, and the current The ohmic reflective metal pattern may be filled in an open area of the blocking pattern.

According to the present invention, there is an effect of providing a light emitting diode in which current spreading is uniform throughout the light emitting region.

In addition, according to the present invention, there is an effect of providing a light emitting diode having an improved lifetime due to uniform current spreading.

1 is a plan view showing a light emitting diode according to an embodiment of the present invention.
FIG. 2 is a cross-sectional view taken along the line AA ′ of FIG. 1.
Figure 3 is a picture showing a difference in current spread between the light emitting diode according to an embodiment of the present invention and the conventional light emitting diode.
4 is a plan view showing a light emitting diode according to another embodiment of the present invention.
5 is a plan view showing a light emitting diode according to another embodiment of the present invention.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 is a plan view showing a light emitting diode according to an embodiment of the present invention.

FIG. 2 is a cross-sectional view taken along the line AA ′ of FIG. 1.

Figure 3 is a picture showing a difference in current spread between the light emitting diode according to an embodiment of the present invention and the conventional light emitting diode.

1 and 2, a light emitting diode 100 according to an exemplary embodiment of the present invention may include a conductive substrate 110, a bonding metal layer 120, a current blocking pattern 130, and an ohmic reflective metal pattern 140. The semiconductor structure layer 150, the passivation layer 160, and the pad pattern 170 may be included.

The semiconductor structure layer 150 may include a first type semiconductor layer 152, an active layer 154, and a second type semiconductor layer 156.

The pad pattern 170 may include a bonding pad 172, a current spreading pad 174, and an extension 176.

The conductive substrate 110 serves to support the semiconductor structure layer 150. In addition, the conductive substrate 110 may serve to supply power to the light emitting diode 100, in particular, the semiconductor structure layer 150, that is, serve as an electrode of the light emitting diode 100.

The bonding metal layer 120 is interposed between the conductive substrate 110 and the current blocking pattern 130 or the semiconductor structure layer 150 positioned on the conductive substrate 110 to couple them.

In addition, the bonding metal layer 120 serves to maintain the reflectivity of the ohmic reflective metal pattern 140 by preventing metal elements from being diffused into the ohmic reflective metal pattern 140 from the conductive substrate 110.

The current blocking pattern 130 is provided between the bonding metal layer 120 and the semiconductor structure layer 150.

The current blocking pattern 130 prevents the current 180 supplied from the bonding pad 172, the current spreading pad 174, and the extension 176 from flowing in the direction directly below the pad pattern 170. The semiconductor structure layer 150 serves to uniformly flow throughout the active layer 154.

That is, in the current blocking pattern 130, the current 180 supplied to the semiconductor structure layer 150 is sufficiently dispersed in the first type semiconductor layer 152 of the semiconductor structure layer 150, thereby providing the first type semiconductor. It serves to supply to the active layer 154 provided under the layer 152.

In addition, the current blocking pattern 130 may serve to inform an end point of etching of the plurality of semiconductor layers for forming the semiconductor structure layer 150 during the process of manufacturing the light emitting diode 100.

The current blocking pattern 130 is made of an insulating material, and preferably, may be made of a silicon oxide film or a silicon nitride film.

Meanwhile, a schottky barrier metal layer (not shown) may be further included between the bonding metal layer 120 and the current blocking pattern 130.

The ohmic reflective metal pattern 140 is provided between the bonding metal layer 120 and the semiconductor structure layer 150. In this case, the current blocking pattern 130 may have an open area, and the ohmic reflective metal pattern 140 may be filled in the open area of the current blocking pattern 130. That is, the current blocking pattern 130 and the ohmic reflective metal pattern 140 may be provided as one layer.

The ohmic reflective metal pattern 140 may include a material in ohmic contact with the second type semiconductor layer 156. For example, when the second type semiconductor layer 156 is a P type semiconductor, the ohmic reflective metal pattern 140 may include nickel (Ni), platinum (Pt), palladium (Pd), rhodium (Rh), and tungsten (W). ), Titanium (Ti), silver (Ag), or gold (Au).

The semiconductor structure layer 150 may include a first type semiconductor layer 152, an active layer 154, and a second type semiconductor layer 156, and may be formed on the ohmic reflective metal pattern 140. The semiconductor layer 156 may be provided, the active layer 154 may be provided on the second type semiconductor layer 156, and the first type semiconductor layer 152 may be provided on the active layer 154.

In addition, the semiconductor structure layer 150 may further include a superlattice layer (not shown) or an electron breaking layer (not shown). In this case, the semiconductor structure layer 150 may be omitted except for the active layer 154.

The first type semiconductor layer 152 may be a III-N-based compound semiconductor doped with a first-type impurity, for example, an N-type impurity, for example, an (Al, Ga, In) N-based Group III nitride semiconductor layer. The first type semiconductor layer 152 may be a GaN layer doped with N-type impurities, that is, an N-GaN layer. In addition, when the first type semiconductor layer 152 is formed of a single layer or multiple layers, for example, the first type semiconductor layer 152 is formed of multiple layers, the first type semiconductor layer 152 may have a superlattice structure.

The active layer 154 may be formed of a III-N-based compound semiconductor, for example, an (Al, Ga, In) N semiconductor layer, and the active layer 154 may be formed of a single layer or a plurality of layers, and may be formed of at least a predetermined wavelength. It can emit light. In addition, the active layer 154 may have a single quantum well structure including one well layer (not shown), or a multiple quantum well having a structure in which a well layer (not shown) and a barrier layer (not shown) are alternately stacked. It may be provided in a structure. In this case, the well layer (not shown) or the barrier layer (not shown) may be formed of a superlattice structure, respectively or both.

The second type semiconductor layer 156 may be a III-N-based compound semiconductor doped with a second-type impurity, for example, a P-type impurity, such as a (Al, In, Ga) N-based Group III nitride semiconductor. The second type semiconductor layer 156 may be a GaN layer doped with P-type impurities, that is, a P-GaN layer. In addition, the second type semiconductor layer 156 may be formed of a single layer or multiple layers. For example, the second type semiconductor layer 156 may have a superlattice structure.

The superlattice layer (not shown) may be provided between the first type semiconductor layer 152 and the active layer 154, and the III-N series compound semiconductor, for example, (Al, Ga, In) N semiconductor layer A plurality of layers, for example, an InN layer and an InGaN layer, may be repeatedly stacked, and the superlattice layer (not shown) may be formed before forming the active layer 154 to form the active layer 154. It is possible to prevent dislocations or defects from being transmitted, thereby mitigating the formation of dislocations or defects in the active layer 154, and acting as an excellent crystallinity of the active layer 154. have.

The electron breaking layer (not shown) may be provided between the active layer 154 and the second type semiconductor layer 156 and may be provided to increase recombination efficiency of electrons and holes, and have a relatively wide band gap. It may be provided with a material. The electron breaking layer (not shown) may be formed of a (Al, In, Ga) N-based group III nitride semiconductor, and may be formed of a P-AlGaN layer doped with Mg.

The passivation layer 160 may be provided on one surface of the conductive substrate 110 having the semiconductor structure layer 150. In this case, the passivation layer 160 covers not only one surface of the semiconductor structure layer 150 but also a side surface thereof to protect the semiconductor structure layer 150 by preventing the semiconductor structure layer 150 from being exposed to the outside. can do.

The passivation layer 160 may be formed of an insulating film, such as a silicon oxide film or a silicon nitride film. The passivation layer 160 may include an opening 162 exposing a predetermined region of the first type semiconductor layer 152.

The pad pattern 170 may be provided on the passivation layer 160. In this case, although the pad pattern 170 is illustrated on the passivation layer 160, the pad pattern 170 is disposed between the semiconductor structure layer 150 and the passivation layer 160. The passivation layer 160 may be provided to cover the pad pattern 170. In this case, the passivation layer 160 may include an opening that opens the bonding pad 172 of the pad pattern 170.

The bonding pad 172 of the pad pattern 170 may be provided on a predetermined region of the passivation layer 160, preferably on one side edge of the surface of the semiconductor structure layer 150.

The bonding pad 172 is connected to an external device or an external power source through a wire (not shown). That is, the light emitting diode 100 according to an embodiment of the present invention, in particular, the semiconductor structure layer 150 is connected to an external power source through the bonding pad 172.

As illustrated in FIG. 2, the bonding pad 172 may be provided in a form in which the current blocking pattern 130 is positioned directly under the bonding pad 172.

In this case, the bonding pad 172 may have a size smaller than that of the current blocking pattern 130. In other words. The width of the bonding pad 172 illustrated in FIG. 2 may be provided to be smaller than the width of the current blocking pattern 130.

A plurality of current spreading pads 174 of the pad pattern 170 may be provided on a predetermined region of the passivation layer 160, and may be spaced apart from the bond pad 172. The current spreading pad 174 may be provided on the other edge of the surface of the semiconductor structure layer 150 except for one edge of the surface of the semiconductor structure layer 150 where the bonding pad 172 is located.

That is, as shown in FIG. 1, when the bonding pad 172 is positioned on one side edge of the surface of the semiconductor structure layer 150, the current spreading pad 174 is one side where the bonding pad 172 is located. It may be provided on the other edge of the surface of the semiconductor structure layer 150 facing the edge.

The current spreading pad 174 may be provided in a form in which the current blocking pattern 130 is positioned similarly to the bonding pad 172 illustrated in FIG. 2.

That is, the current spreading pad 174 is similar to the bottom structure of the bonding pad 172, in the direction immediately below the current spreading pad 174, preferably the current blocking pattern 130 under the semiconductor structure layer 150. A current injected into the semiconductor structure layer 150 from the current spreading pad 174 may be provided to be distributed and flow instead of being concentrated in a direct direction of the current spreading pad 174.

The current spreading pad 174 may be the same or smaller in size than the bonding pad 172. That is, the current spreading pad 174 may be smaller in size than at least the bonding pad 172. However, it is provided with a wider width than the width of the extension portion 176 described later.

An extension part 176 of the pad pattern 170 may be provided on the semiconductor structure layer 150.

The extension part 176 is connected to the bonding pad 172 and may be provided in a shape that is uniformly distributed on the semiconductor structure layer 150. That is, the extension part 176 may be arranged not only along the edge on the surface of the semiconductor structure layer 150 but also in a form crossing the center area.

The extension part 176 is connected to the bonding pad 172 and serves to distribute the power supplied from the outside to the semiconductor structure layer 150 to be injected into the semiconductor structure layer 150.

The extension part 176 electrically connects the bonding pad 172 and the current spreading pad 174.

The extension part 176 may be provided in a form in which the current blocking pattern 130 is positioned similarly to the bonding pad 172 shown in FIG. 2.

Therefore, the light emitting diode 100 according to the embodiment of the present invention includes a pad pattern 170 including the bonding pad 172, the current spreading pad 174, and the extension 176 on the semiconductor structure layer 150. And the current blocking pattern 130 in a direction directly below at least the bonding pad 172 and the current spreading pad 174 of the pad pattern 170, and the bonding pad 172. ) And the current spreading pad 174 interact with the current blocking pattern 130 so that the current flowing through the semiconductor structure layer 150 flows uniformly throughout and uniformly emits light in the entire region of the semiconductor structure layer 150. There is.

That is, as shown in FIG. 3, in the case of the light emitting diode according to the prior art, a current is concentrated by concentrating on a certain region, particularly, the region 190 corresponding to the bonding pad 172 of the present invention, and the region is different from the region thereof. It can be seen that the light emission stronger than. In other words. It can be seen that the light emitting diode according to the prior art concentrates current in the region 190 corresponding to the bonding pad 172 of the present invention.

On the contrary, in the case of the light emitting diode according to the exemplary embodiment of the present invention, the semiconductor structure layer 150, that is, the light emitting diode is relatively uniformly radiated over the entire surface of the light emitting region, and thus the current as well as the region in which the bonding pad 172 is provided. It can be seen that light is emitted relatively uniformly even in the region where the dispersion pad 174 is provided. That is, in the light emitting diode according to the exemplary embodiment of the present invention, it can be seen that current diffusion is uniformly performed over the semiconductor structure layer 150, that is, the entire light emitting area.

4 is a plan view showing a light emitting diode according to another embodiment of the present invention.

Referring to FIG. 4, the light emitting diode 200 according to another embodiment of the present invention is distributed in comparison with the light emitting diode 100 according to an embodiment of the present invention described with reference to FIGS. 1 and 2. The pad 174 is different in that it may be provided on the other edge of the semiconductor structure layer 150 except for one edge of the surface of the semiconductor structure layer 150.

That is, in the light emitting diode 200 according to another embodiment of the present invention, the current spreading pad 174 is disposed on the other edge of the edge of the semiconductor structure layer 150 except for the edge where the bonding pad 172 is provided. It may be provided in the structure.

5 is a plan view showing a light emitting diode according to another embodiment of the present invention.

Referring to FIG. 5, the light emitting diode 300 according to another embodiment of the present invention is compared with the light emitting diode 100 according to an embodiment of the present invention described with reference to FIGS. 1 and 2. The difference is that the dispersion pad 174 may be provided on the inner side of the surface of the semiconductor structure layer 150.

That is, in the LED 200 according to another embodiment of the present invention, the current spreading pad 174 is provided on a predetermined region on the surface of the semiconductor structure layer 150 except for edges of the semiconductor structure layer 150. It may be a structure.

The present invention has been described above with reference to the above embodiments, but the present invention is not limited thereto. Those skilled in the art will appreciate that modifications and variations can be made without departing from the spirit and scope of the present invention and that such modifications and variations also fall within the present invention.

110 conductive substrate 120 bonding metal layer
130: current blocking pattern 140: ohmic reflective metal pattern
150 semiconductor structure layer 160 passivation layer
170: pad pattern 172: bonding pads
174: current dispersion pad 176: extension

Claims (8)

Conductive substrates;
A semiconductor structure layer provided on the conductive substrate and including an active layer;
A pad pattern provided on the semiconductor structure layer;
The pad pattern may include at least one bonding pad provided on one edge of a surface of the semiconductor structure layer; And
At least one current spreading pad spaced apart from the bonding pad.
The light emitting diode of claim 1, wherein the pad pattern further includes at least one extension connecting the bonding pad and the current spreading pad.
The light emitting diode of claim 1, wherein the current spreading pad is disposed on an edge other than one edge of a surface of the semiconductor structure layer.
The light emitting diode of claim 1, wherein the current spreading pad is provided on an inner side of a surface of the semiconductor structure layer.
The light emitting diode of claim 1, wherein the semiconductor structure layer comprises a second type semiconductor layer provided between the conductive substrate and the active layer and a first type semiconductor layer provided between the active layer and the pad pattern.
The light emitting diode of claim 1, wherein the light emitting diode further comprises a current blocking pattern provided between the semiconductor structure layer and the conductive substrate.
The light emitting diode of claim 6, wherein the current blocking pattern is located at least under the bonding pad and the current spreading pad.
The method of claim 6, wherein the light emitting diode further comprises a bonding metal layer between the current blocking pattern and the conductive substrate, and further includes an ohmic reflective metal pattern between the conductive substrate and the bonding metal layer, wherein the current blocking pattern includes an open region. And an ohmic reflective metal pattern filled in an open area of the current blocking pattern.
KR1020110130998A 2011-12-08 2011-12-08 Light emitting diode KR20130064407A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1020110130998A KR20130064407A (en) 2011-12-08 2011-12-08 Light emitting diode
PCT/KR2012/010436 WO2013085255A1 (en) 2011-12-08 2012-12-04 Light emitting diode with improved current spreading

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020110130998A KR20130064407A (en) 2011-12-08 2011-12-08 Light emitting diode

Publications (1)

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KR20130064407A true KR20130064407A (en) 2013-06-18

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