KR20130060005A - Copper based thin metal layer and manufacturing method of graphene using the same - Google Patents

Copper based thin metal layer and manufacturing method of graphene using the same Download PDF

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KR20130060005A
KR20130060005A KR1020110126273A KR20110126273A KR20130060005A KR 20130060005 A KR20130060005 A KR 20130060005A KR 1020110126273 A KR1020110126273 A KR 1020110126273A KR 20110126273 A KR20110126273 A KR 20110126273A KR 20130060005 A KR20130060005 A KR 20130060005A
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copper
thin film
metal thin
based metal
graphene
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KR1020110126273A
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Korean (ko)
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KR101900758B1 (en
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윤종혁
나덕화
송영일
원동관
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삼성테크윈 주식회사
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Priority to KR1020110126273A priority Critical patent/KR101900758B1/en
Priority to CN201280058356.XA priority patent/CN103958730B/en
Priority to PCT/KR2012/008858 priority patent/WO2013081302A1/en
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    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • B82B3/0004—Apparatus specially adapted for the manufacture or treatment of nanostructural devices or systems or methods for manufacturing the same
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/182—Graphene
    • C01B32/184—Preparation
    • C01B32/186—Preparation by chemical vapour deposition [CVD]
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/08—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material

Abstract

PURPOSE: A metal thin film for synthesizing graphene and a graphene manufacturing method using the same are provided to include 0.001-0.05 wt% of Au, thereby improving sheet resistance and uniformity. CONSTITUTION: A metal thin film for synthesizing graphene comprises 0.001-0.05 wt% of Au. The size of a copper crystal grain of a copper based thin film(100) is at least 20Mm or greater. The copper based thin film includes an element of one kind or greater selected among S, As, Sb, Bi, Se, Te, Pb, and Sn and oxygen. The content of the oxygen is 0.01-0.05 wt%.

Description

Metal thin film for graphene synthesis and graphene manufacturing method using the same {Copper based thin metal layer and manufacturing method of graphene using the same}

The present invention relates to a metal thin film used for graphene synthesis and a graphene manufacturing method using the same.

Generally, graphite has a structure in which a plate-shaped two-dimensional graphene sheet in which carbon atoms are connected in a hexagonal shape is laminated. Recently, graphene was peeled off from graphite and examined for its properties.

The most notable feature is that when electrons move in graphene, they flow as if the mass of the electrons is zero. This means that the electrons flow at the speed at which the light travels in the vacuum, that is, the light flux. Graphene also has an unusual half-integer quantum hall effect for electrons and holes. In addition, it is known that the electron mobility of graphene has a high value of about 20,000 to 50,000 cm < 2 > / Vs.

As a method for synthesizing graphene, chemical vapor deposition (CVD) may be used. However, in order to be utilized in various fields throughout the industry, research to manufacture high quality graphene must be continuously conducted.

One embodiment of the present invention relates to a copper-based metal thin film for synthesizing high quality graphene and to a graphene manufacturing method using the same.

According to an aspect of the present invention, a copper-based metal thin film for catalytic metal for graphene synthesis, provides a copper-based metal thin film containing 0.001 ~ 0.05 wt% silver.

According to one feature of the invention, the size of the copper grains of the copper-based metal thin film may be at least 20μm or more.

According to another feature of the present invention, it may include oxygen and at least one or more selected from S, As, Sb, Bi, Se, Te, Pb, and Sn.

According to another feature of the invention, the oxygen content may be 0.01 to 0.05 wt%.

According to another feature of the invention, the at least one or more selected from S, As, Sb, Bi, Se, Te, Pb, and Sn may be included in 0.003 wt% or less.

According to another feature of the invention, the thickness of the copper-based metal thin film may be 5 ~ 75 μm.

According to another feature of the invention, the copper grains in the (1 0 0) direction of the copper grains of the copper-based metal thin film may be 80% or more.

According to another feature of the invention, the copper-based metal thin film can be produced by rolling.

According to another aspect of the invention, preparing a copper-based metal thin film containing 0.001 ~ 0.05 wt% of silver and the size of the copper grains of at least 20μm; And growing graphene on the copper-based metal thin film by providing a reaction gas and heat containing carbon to the copper-based metal thin film and reacting the same.

According to one feature of the invention, the thickness of the copper-based metal thin film may be 5 ~ 75 μm.

According to another feature of the invention, at least 80% of the copper grains of the copper-based metal thin film may face the same plane direction.

According to another feature of the invention, the plane direction may be a (10 0) direction.

According to another feature of the present invention, the copper-based metal thin film may include at least one type of winso and oxygen selected from S, As, Sb, Bi, Se, Te, Pb, and Sn.

According to another feature of the invention, the oxygen content may be 0.01 to 0.05 wt%.

According to another feature of the invention, the at least one or more selected from S, As, Sb, Bi, Se, Te, Pb, and Sn may be included in 0.003 wt% or less.

According to one embodiment of the present invention as described above, it is possible to produce a high quality graphene uniform and improved sheet resistance properties.

1A and 1B are conceptual views schematically illustrating copper grains of a copper metal thin film according to an embodiment of the present invention and copper grains of a copper thin film according to a comparative example of the present invention.
Figure 2a shows a cross-sectional image of the FIB-SIMS of the copper-based metal thin film according to an embodiment of the present invention.
2B shows an FIB-SIMS cross-sectional image of a copper thin film according to a comparative example of the present invention.
3A shows an EBSP image of a copper-based metal thin film according to an embodiment of the present invention.
3B shows an EBSP image of a copper thin film according to a comparative example of the present invention.
3C shows an EBSP in situ determination range diagram.
4 is a flowchart schematically showing a graphene manufacturing process using a copper-based metal thin film according to an embodiment of the present invention.

Advantages and features of the present invention and methods for achieving them will be apparent with reference to the embodiments described below in detail with the accompanying drawings. The present invention may, however, be embodied in many different forms and should not be construed as being limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. Is provided to fully convey the scope of the invention to those skilled in the art, and the invention is only defined by the scope of the claims. It is to be understood that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. In the present specification, the singular form includes plural forms unless otherwise specified in the specification. It is noted that the terms "comprises" and / or "comprising" used in the specification are intended to be inclusive in a manner similar to the components, steps, operations, and / Or additions. The terms first, second, etc. may be used to describe various elements, but the elements should not be limited by terms. Terms are used only for the purpose of distinguishing one component from another.

(Copper Metal Thin Film)

The copper-based metal thin film 100 according to the present invention basically includes copper and silver. Silver may be included from about 0.001 to 0.05 wt%. If silver is contained less than 0.001 wt%, it is difficult to produce high quality graphene because it cannot have a large copper grain, and if silver is contained more than 0.05wt%, grains of copper which are advantageous for graphene synthesis are not included. It may be difficult to form and may be detrimental to graphene seed formation.

 The copper-based metal thin film 100 may be manufactured by rolling, in which case the copper-based metal thin film 100 may be at least one selected from S, As, Sb, Bi, Se, Te, Pb, and Sn. And oxygen. Oxygen may be included 0.01 to 0.05 wt%, at least one element selected from S, As, Sb, Bi, Se, Te, Pb, and Sn is about 0.003wt% or less with respect to the copper-based metal thin film 100 It may be included to be.

1A and 1B are conceptual views schematically illustrating copper grains of a copper metal thin film according to an embodiment of the present invention and copper grains of a copper thin film according to a comparative example of the present invention.

1A and 1B, the size of the copper grains G1 of the copper-based metal thin film 100 including 0.001 to 0.05 wt% of silver is the copper grains G2 of the copper thin film 10 according to the comparative example. It is formed larger than the size of. The size of a copper grain shows the value measured by the linear crossover method. The linear crossover method is a method of determining the size of grains by measuring the length of grains passing through arbitrary straight lines in an EBSD map or microstructure image.

The phenomenon in which the size of the copper grains G1 of the copper-based metal thin film 100 containing 0.001 to 0.05 wt% silver is larger than the size of the copper grains G2 of the copper thin film 10 according to the comparative example is It is determined that the composition of the copper-based metal thin film 100 in the rolling process to be described below helps re-crystallization to form a large size of the grains (G1).

As described above, the copper-based metal thin film 100 may be manufactured through a rolling process. Hereinafter will be described an example of the manufacturing process of the copper-based metal thin film 100 according to an embodiment of the present invention.

First, a raw material is mix | blended based on the composition of the copper-based metal thin film 100 set previously, and it melt | dissolves and casts. That is, the alloy raw material which comprises a metal thin film is introduce | transduced suitably, it melt | dissolves, it injects into a mold, and it solidifies, casting a billet. Castings such as billets may be subjected to load deformation processing to a suitable size, or may be subjected to a heat treatment to soften the hardened billets again by processing.

After this, rolling is performed. Rolling can repeatedly perform a hot rolling process and a cold rolling process. For example, the process of annealing the hot-rolled cast body above the recrystallization temperature and cold rolling below the recrystallization temperature can be repeatedly performed, and finally, the rolling process can be completed by cold rolling. Through such a rolling step, the cast body may be manufactured from a copper-based metal sheet having a thickness of about 5 to 75 μm. Through the rolling process, the copper-based metal thin film 100 including copper and silver is recrystallized.

The copper-based metal thin film 100 has a larger size of the copper grains G1 than the general copper thin film 10 through recrystallization by rolling.

2A and 2B show an FIB-SIMS cross-sectional image of a copper-based metal thin film according to an embodiment of the present invention, and FIG. 1B shows an FIB-SIMS cross-sectional image of a copper thin film according to a comparative example of the present invention. Here, FIB-SIMS represents a Focused Ion Beam Instruments equipped with Secondary Ion Mass Spectrometer. 2A shows an image of copper grains of a copper-based metal thin film after recrystallization.

2A and 2B, it can be seen that the size of the copper grains G1 of the copper-based metal thin film 100 according to the embodiment of the present invention is larger. By adding silver, larger grains (G1) can be formed, and such copper grains (G1) advantageously work to produce graphene of uniform quality.

3A shows an EBSP image of a copper-based metal thin film according to an embodiment of the present invention, FIG. 3B shows an EBSP image of a copper thin film according to a comparative example of the present invention, and FIG. 3C shows an EBSP in situ determination range diagram. Here, EBSP represents Electron Backscatter Diffraction Pattern.

Referring to FIG. 3A, it can be seen that a substantial portion of the copper grains of the copper-based metal thin film 100 according to the embodiment of the present invention is oriented in the same plane direction. That is, it can be seen that at least 80% of the copper grains are oriented uniformly in the same plane direction in the (1 0 0) direction. On the other hand, referring to Figure 3b, it can be seen that the copper thin film 10 according to the comparative example of the present invention appears in a variety of crystal grain direction.

Since the copper-based metal thin film 100 according to the embodiment of the present invention is oriented in the same plane direction, the graphene synthesized using the copper-based metal thin film 100 may have improved uniformity.

Hereinafter, a graphene manufacturing process using a copper-based metal thin film according to the present invention will be described with reference to FIG. 4.

In step 410, the copper-based metal thin film 100 is prepared. The copper-based metal thin film 100 used in the manufacture of graphene may be a single layer of the copper-based metal thin film 100 described with reference to FIGS. 1 to 3 or the copper-based metal thin film described with reference to FIGS. 100) may be laminated on the base substrate. Specific configuration and characteristics of the copper-based metal thin film 100 will be replaced with the above description.

For example, the copper-based metal thin film 100 may be disposed in the chamber for graphene synthesis. The inside of the chamber is in a state where airtightness with the outside is maintained, and a reaction gas to be described below may be introduced.

In operation 420, graphene is grown on the copper-based metal thin film 100 by providing a reaction gas containing carbon and heat to the copper-based metal thin film 100.

Reaction gases containing carbon include methane (CH 4 ), carbon monoxide (CO), ethane (C 2 H 6 ), ethylene (CH 2 ), ethanol (C 2 H 5 ), acetylene (C 2 H 2 ), propane ( CH 3 CH 2 CH 3 ), propylene (C 3 H 6 ), butane (C 4 H 10 ), pentane (CH 3 (CH 2 ) 3 CH 3 ), pentene (C 5 H 10 ), cyclopentadiene (C 5 H 6 ), one or more selected from the group containing carbon atoms such as hexane (C 6 H 14 ), cyclohexane (C 6 H 12 ), benzene (C 6 H 6 ), toluene (C 7 H 8 ) have.

The heat provided to the copper-based metal thin film 100 may decompose the reaction gas into carbon atoms and hydrogen atoms. The decomposed reaction gas reacts with the copper-based metal thin film 100 to grow graphene on the copper-based metal thin film 100.

As another embodiment of the present invention, before the step 420 of providing a reaction gas and heat containing carbon, the method may further include a pretreatment step of cleaning the surface of the copper-based metal thin film 100. The pretreatment process is for removing foreign matter present on the surface of the copper-based metal thin film 100, and may use an unreacted gas such as hydrogen.

In step 430, the graphene-grown copper-based metal thin film 100 is cooled. Through cooling, graphene having a uniform arrangement may be completed.

Table 1 below is a table comparing the characteristics of the graphene produced using a copper-based metal thin film according to an embodiment of the present invention. The left side of the table shows the characteristics of the graphene fabricated using a copper-based metal thin film according to an embodiment of the present invention, for example, a copper-based metal thin film containing silver, the right side of the table is a metal thin film according to a comparative example of the present invention, namely It shows the characteristics of the graphene produced using a general copper thin film.

In both cases, a thin film having a thickness of 35 μm was used, and all four graphenes were manufactured using the metal thin films according to the Examples and Comparative Examples. Sheet resistance was measured at nine points randomly selected for each graphene.

Example (35 μm silver + copper metal thin film) Comparative Example (35μm Copper Thin Film) Measuring point Sample 1 Sample 2 Sample 3 Sample 4 Sample 5 Sample 6 Sample 7 Sample 8 One 422 472 414 377 714 852 735 454 2 407 397 355 358 637 759 690 449 3 395 420 403 382 783 720 728 511 4 405 428 402 367 604 774 696 424 5 401 397 372 394 558 706 690 457 6 379 410 388 354 696 646 656 505 7 495 418 409 388 515 990 probe error 478 8 403 381 367 386 548 709 probe
error 507 9 417 379 388 417 704 678 714 544 avg. 414 411 389 380 640 759 701 481 min. 379 379 355 354 515 646 656 424 max. 495 472 414 417 783 990 735 544 uniformity 14 11 8 8 21 23 6 12 total avg. 399 645 total
uniformity
10
15

The sheet resistance characteristics are as follows. Looking at Samples 1 to 4 of graphene fabricated using a copper-based metal thin film containing silver according to an embodiment of the present invention, the average sheet resistance per unit area is 399 Ω / sq., Whereas the copper thin film according to the comparative example is used. Looking at the graphene samples produced 5 to 8 it can be seen that the average sheet resistance per unit area is 645 Ω / sq. The sheet resistance between the comparative examples and the examples showed a difference of about 246 Ω / sq.

Meanwhile, the uniformity (umiformity,%) is as follows. Uniformity can be calculated as [(max + min) / (2 * avg)]. The sheet resistance uniformity of the graphene samples prepared using the copper-based metal thin film containing silver according to the embodiment of the present invention is about 10%, whereas the sheet resistance uniformity of the graphene samples prepared using the copper thin film according to the comparative example is It is large, about 15%.

Combining the above features, it can be seen that the graphene fabricated using the copper-based metal thin film according to the embodiment of the present invention is excellent in both sheet resistance and uniformity.

Although the present invention has been described in connection with the above-mentioned preferred embodiments, it is possible to make various modifications or variations without departing from the spirit and scope of the invention. Accordingly, it is intended that the appended claims cover all such modifications and variations as fall within the true spirit of the invention.

100: copper-based metal thin film
10: copper thin film according to the comparative example
G1: Copper grains of a copper metal thin film
G2: Copper grains of the copper thin film according to the comparative example

Claims (15)

Copper-based metal thin film for the catalytic metal for graphene synthesis,
Copper-based metal thin film containing 0.001 to 0.05 wt% silver. The method of claim 1,
The copper-based metal thin film of the copper-based metal thin film is at least 20μm in size. The method of claim 1,
A copper-based metal thin film comprising oxygen and at least one selected from S, As, Sb, Bi, Se, Te, Pb, and Sn. The method of claim 3,
The oxygen content is 0.01 ~ 0.05 wt% copper-based metal thin film. The method of claim 3,
The copper-based metal thin film of at least one or more selected from the S, As, Sb, Bi, Se, Te, Pb, and Sn is 0.003 wt% or less. The method of claim 1,
The copper-based metal thin film has a thickness of 5 to 75 μm. The method of claim 1,
The copper-based metal thin film of claim 1, wherein the copper grains in the direction of (1 0 0) among the copper grains of the copper-based metal thin film. The method of claim 1,
The copper-based metal thin film is a copper-based metal thin film produced by rolling. Preparing a copper-based metal thin film containing 0.001 to 0.05 wt% silver and having a copper grain size of at least 20 μm or more; And
Growing graphene on the copper-based metal thin film by providing a reaction gas and heat containing carbon to the copper-based metal thin film and reacting the same. 10. The method of claim 9,
The copper-based metal thin film has a thickness of 5 ~ 75 μm manufacturing method of graphene. 10. The method of claim 9,
80% or more of the copper crystal grains of the copper-based metal thin film is directed to the same plane direction. The method of claim 11,
The surface direction is a manufacturing method of graphene in the (1 0 0) direction. 10. The method of claim 9,
The copper-based metal thin film is graphene manufacturing method comprising at least one or more of the selected from S, As, Sb, Bi, Se, Te, Pb, Sn and oxygen and oxygen. The method of claim 13,
The oxygen content is 0.01 ~ 0.05 wt% of the production method of graphene. The method of claim 13,
At least one or more selected from S, As, Sb, Bi, Se, Te, Pb, and Sn is 0.003 wt% or less.
KR1020110126273A 2011-11-29 2011-11-29 Copper based thin metal layer and manufacturing method of graphene using the same KR101900758B1 (en)

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CN201280058356.XA CN103958730B (en) 2011-11-29 2012-10-29 For the synthesis of the thin metal film of Graphene and utilize its Graphene manufacture method
PCT/KR2012/008858 WO2013081302A1 (en) 2011-11-29 2012-10-29 Thin metal film for synthesizinggraphene and graphene manufacturing method using the same

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9446571B2 (en) 2013-11-12 2016-09-20 Samsung Display Co., Ltd. Touch panel and method of manufacturing touch panel
WO2017204408A1 (en) * 2016-05-24 2017-11-30 해성디에스 주식회사 Electric wire structure and manufacturing method therefor

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ES2593709B1 (en) * 2016-07-27 2017-11-07 La Farga Lacambra, S.A.U. Procedure for obtaining copper sheets as a substrate for the production of high quality graphene
CN114951610A (en) * 2022-05-13 2022-08-30 中车工业研究院有限公司 Graphene/copper composite material combining precise casting and chemical vapor deposition and preparation method thereof

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003193211A (en) * 2001-12-27 2003-07-09 Nippon Mining & Metals Co Ltd Rolled copper foil for copper-clad laminate
US20050025695A1 (en) * 2003-07-28 2005-02-03 Bhabendra Pradhan Catalyst and process to produce nanocarbon materials in high yield and at high selectivity at reduced reaction temperatures
JP2010150598A (en) * 2008-12-25 2010-07-08 Hitachi Cable Ltd Rolled copper foil
KR20110006644A (en) * 2009-07-14 2011-01-20 성균관대학교산학협력단 Preparing method of graphene sheet, graphene laminate, preparing method of transformation-affordable graphene sheet, transformation-affordable graphene sheet and device using the same
KR20110051584A (en) * 2009-11-10 2011-05-18 삼성전자주식회사 Method of fabricating graphene using alloy catalyst
KR20110064072A (en) * 2009-12-07 2011-06-15 주식회사 케이씨텍 Method and apparatus for manufacturing graphene sheet using atomic layer deposition
US20110200787A1 (en) * 2010-01-26 2011-08-18 The Regents Of The University Of California Suspended Thin Film Structures

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101285175B (en) * 2008-05-29 2010-07-21 中国科学院化学研究所 Process for preparing graphenes by chemical vapour deposition method
KR101251020B1 (en) * 2010-03-09 2013-04-03 국립대학법인 울산과학기술대학교 산학협력단 Method for manufacturing graphene, transparent electrode, active layer comprising thereof, display, electronic device, optoelectronic device, solar cell and dye-sensitized solar cell including the electrode or active layer
CN102092710B (en) * 2010-12-17 2013-01-23 中国科学院化学研究所 Regular graphene and preparation method thereof
CN102134067B (en) * 2011-04-18 2013-02-06 北京大学 Method for preparing single-layer graphene

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003193211A (en) * 2001-12-27 2003-07-09 Nippon Mining & Metals Co Ltd Rolled copper foil for copper-clad laminate
US20050025695A1 (en) * 2003-07-28 2005-02-03 Bhabendra Pradhan Catalyst and process to produce nanocarbon materials in high yield and at high selectivity at reduced reaction temperatures
JP2010150598A (en) * 2008-12-25 2010-07-08 Hitachi Cable Ltd Rolled copper foil
KR20110006644A (en) * 2009-07-14 2011-01-20 성균관대학교산학협력단 Preparing method of graphene sheet, graphene laminate, preparing method of transformation-affordable graphene sheet, transformation-affordable graphene sheet and device using the same
KR20110051584A (en) * 2009-11-10 2011-05-18 삼성전자주식회사 Method of fabricating graphene using alloy catalyst
KR20110064072A (en) * 2009-12-07 2011-06-15 주식회사 케이씨텍 Method and apparatus for manufacturing graphene sheet using atomic layer deposition
US20110200787A1 (en) * 2010-01-26 2011-08-18 The Regents Of The University Of California Suspended Thin Film Structures

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
Z. Luo et al. Chemistry of Materials. 2011, Vol. 23, pp. 1441-1447(2011.02.10.) 1부. *
Z. Luo et al. Chemistry of Materials. 2011, Vol. 23, pp. 1441-1447. *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9446571B2 (en) 2013-11-12 2016-09-20 Samsung Display Co., Ltd. Touch panel and method of manufacturing touch panel
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