KR20130051095A - Lead frame, manufacturing method the same and light emitting diode using the same - Google Patents
Lead frame, manufacturing method the same and light emitting diode using the same Download PDFInfo
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- KR20130051095A KR20130051095A KR1020110116249A KR20110116249A KR20130051095A KR 20130051095 A KR20130051095 A KR 20130051095A KR 1020110116249 A KR1020110116249 A KR 1020110116249A KR 20110116249 A KR20110116249 A KR 20110116249A KR 20130051095 A KR20130051095 A KR 20130051095A
- Authority
- KR
- South Korea
- Prior art keywords
- lead frame
- layer
- aluminum
- light emitting
- bragg reflector
- Prior art date
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 24
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 59
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 59
- 238000000034 method Methods 0.000 claims description 31
- 239000000758 substrate Substances 0.000 claims description 23
- 239000000463 material Substances 0.000 claims description 12
- 239000006185 dispersion Substances 0.000 claims description 8
- 238000001771 vacuum deposition Methods 0.000 claims description 7
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- 239000002994 raw material Substances 0.000 claims description 6
- 230000002265 prevention Effects 0.000 claims description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 3
- 238000000059 patterning Methods 0.000 claims description 3
- 230000003064 anti-oxidating effect Effects 0.000 claims description 2
- 238000000605 extraction Methods 0.000 abstract description 10
- 238000002845 discoloration Methods 0.000 abstract description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 8
- 239000011347 resin Substances 0.000 description 8
- 229920005989 resin Polymers 0.000 description 8
- 239000010949 copper Substances 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000007747 plating Methods 0.000 description 5
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 4
- 239000004926 polymethyl methacrylate Substances 0.000 description 4
- 238000002310 reflectometry Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000002096 quantum dot Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- 229910000906 Bronze Inorganic materials 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 2
- 239000003963 antioxidant agent Substances 0.000 description 2
- 230000003078 antioxidant effect Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 229920006336 epoxy molding compound Polymers 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229920002050 silicone resin Polymers 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- FSJWWSXPIWGYKC-UHFFFAOYSA-M silver;silver;sulfanide Chemical compound [SH-].[Ag].[Ag+] FSJWWSXPIWGYKC-UHFFFAOYSA-M 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 239000011573 trace mineral Substances 0.000 description 1
- 235000013619 trace mineral Nutrition 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The present invention provides a light emitting device comprising: a first lead frame having a region in which a light emitting diode chip is to be mounted; A second lead frame separated from the first lead frame; An aluminum (Al) layer formed on at least one side of the first and second lead frames; A lead frame formed on an upper surface of the aluminum (Al) layer, including a distributed Bragg reflector layer formed by alternately stacking first and second refractive films having different refractive indices, thereby preventing discoloration and improving light extraction efficiency; Provided are a manufacturing method and a light emitting diode package using the same.
Description
The present invention relates to a lead frame, a method of manufacturing the same, and a light emitting diode package using the same.
A light emitting diode is a device in which a material included in the device emits light by using electrical energy. The light emitting diode converts energy generated by recombination of electrons and holes of the bonded semiconductor into light and emits the light. Such light emitting diodes are widely used as lighting, display devices, and light sources, and their development is being accelerated.
In particular, the development of general lighting using light emitting diodes has recently been fueled by the commercialization of mobile phone keypads, side viewers, camera flashes, etc. using gallium nitride (GaN) based light emitting diodes, which have been actively developed and used. Like the backlight units of large TVs, automotive headlights, and general lighting, the use of light emitting diodes is gradually increasing in size, high output, and high efficiency, and the characteristics of light emitting diodes used in such applications are also satisfied. Higher levels are required.
However, the lead frame provided in the conventional light emitting diode has a problem in that the surface discoloration occurs frequently to reduce the external light extraction efficiency.
One of the objects of one embodiment of the present invention is to provide a lead frame and a method for manufacturing the same, in which discoloration is suppressed and light extraction efficiency is improved.
One object of one embodiment of the present invention is to provide a light emitting diode package using such a lead frame.
A lead frame according to an embodiment of the present invention includes a first lead frame having a region in which a light emitting diode chip is to be mounted; A second lead frame separated from the first lead frame; An aluminum (Al) layer formed on at least one side of the first and second lead frames; And a distributed Bragg reflector layer formed on an upper surface of the aluminum (Al) layer and formed by alternately stacking first and second refractive films having different refractive indices.
In this case, the aluminum (Al) layer may be formed on the surfaces of the first and second lead frames by vacuum deposition.
In addition, each of the first and second refractive films may be formed of a light transmissive material, and the first refractive film may include any one material of Ta 2 O 5 , ITO, TiO 2 , ZrO 2, and Si 3 N 4 . The second refractive film is SiO 2 , Al 2 O 3 And MgO.
The distributed Bragg reflector layer may be formed in a region where the LED chip of the first lead frame is to be mounted.
In addition, the distributed Bragg reflector layer may be a connection portion to be electrically connected to the light emitting diode chip is mounted, the connection portion may be a groove portion formed so that the aluminum (Al) layer is exposed on the bottom surface of the distributed Bragg reflector layer. .
A light emitting diode package according to an embodiment of the present invention includes a package body having a lead frame; And a light emitting diode chip mounted on the package body and electrically connected to the lead frame, wherein the lead frame comprises: a first lead frame having a region in which the light emitting diode chip is to be mounted; A second lead frame separated from the first lead frame; An aluminum (Al) layer formed on at least one side of the first and second lead frames; And a distributed Bragg reflector layer formed on an upper surface of the aluminum (Al) layer and formed by alternately stacking first and second refractive films having different refractive indices.
In this case, the aluminum (Al) layer may be formed on the surfaces of the first and second lead frames by vacuum deposition, and the first and second refractive films constituting the dispersed Bragg reflector layer are each made of a light transmissive material. Can be.
The package body may have a recess in which the first and second lead frames are exposed, and the distributed Bragg reflector layer may be formed on an upper surface of the first and second lead frames exposed in the recess.
In addition, the distributed Bragg reflector layer may be a connection portion to be electrically connected to the light emitting diode chip is mounted, the connection portion may be a groove portion formed so that the aluminum (Al) layer is exposed on the bottom surface of the distributed Bragg reflector layer. .
According to one or more exemplary embodiments, a method of manufacturing a lead frame includes: forming a first lead frame and a second lead frame having an area where a light emitting diode chip is to be mounted by patterning a raw material substrate; Forming an aluminum (Al) layer on at least one side of the first and second lead frames; Alternately stacking first and second refractive films having different refractive indices on the aluminum (Al) layer to form a dispersed Bragg reflector layer.
In this case, the forming of the aluminum (Al) layer may be a step of vacuum depositing aluminum (Al) on the surfaces of the first and second lead frames.
The method may further include forming an aluminum (Al) coating prevention layer on one side of the first and second lead frames before forming the aluminum (Al) layer. It may be an ultraviolet (UV) photosensitive film.
The method may further include forming an antioxidant layer on the aluminum (Al) layer before forming the dispersed Bragg reflector layer.
In this case, the package body may have a recess in which the first and second lead frames are exposed, and the distributed Bragg reflector layer may be formed on an upper surface of the first and second lead frames exposed in the recess.
In addition, the distributed Bragg reflector layer may be a connection portion to be electrically connected to the light emitting diode chip is mounted, the connection portion may be a groove portion formed so that the aluminum (Al) layer is exposed on the bottom surface of the distributed Bragg reflector layer. .
One of the objects of one embodiment of the present invention is to provide a lead frame and a method for manufacturing the same, in which discoloration is suppressed and light extraction efficiency is improved.
One object of one embodiment of the present invention is to provide a light emitting diode package using such a lead frame.
1 is a perspective view schematically showing a light emitting diode package according to an embodiment of the present invention.
FIG. 2 is a view schematically illustrating the shape of a cross section of the light emitting diode package illustrated in FIG. 1 along an AA ′ line.
3 is an enlarged view of a portion B of FIG. 2.
4 to 7 is a view schematically showing a method of manufacturing a lead frame according to an embodiment of the present invention.
8 to 9 are schematic views illustrating a method of manufacturing a light emitting diode package according to an embodiment of the present invention.
Hereinafter, with reference to the accompanying drawings will be described an embodiment according to the present invention.
These examples are provided to illustrate the scope of the invention to those skilled in the art with respect to the present invention. Therefore, the present invention is not limited to the following embodiments, but may be embodied in various forms suggested by the claims. Therefore, the shape and size of the components shown in the drawings may be exaggerated for more clear description, components having substantially the same configuration and function in the drawings will use the same reference numerals.
First, a lead frame and a light emitting diode package according to an embodiment of the present invention will be described.
1 is a perspective view schematically illustrating a light emitting diode package according to an embodiment of the present invention, and FIG. 2 is a view schematically illustrating a cross-sectional view of the light emitting diode package illustrated in FIG. 1 taken along line AA ′.
The lead frame according to an embodiment of the present invention may be manufactured by a manufacturing process of a light emitting diode package to be described later. Alternatively, the lead frame may be manufactured separately and provided to a manufacturing process of a light emitting diode package.
1 and 2, a lead frame according to an embodiment of the present invention may include a
The
The
Aluminum (Al) layers 112 and 122 are formed on at least one side of the
In general, silver (Ag) having high reflectivity is plated on the surface of the base substrate to improve the external light extraction efficiency of light emitted from the light emitting diode chip, but silver (Ag) is present in traces of sulfur (S ) May form silver sulfide (Ag 2 S), which discolors the surface of the lead frame, thereby reducing the reflectance on the surface of the lead frame, thereby reducing external light extraction efficiency and causing a decrease in the reliability of the product. It became.
The aluminum layers 112 and 122 have little reactivity with trace elements in the air in the manufacturing process, and thus do not cause discoloration to reduce the external light extraction efficiency, and have higher electrical conductivity and thermal conductivity than silver (Ag). And the reflectivity is almost the same, but the cost is an advantage. In addition, when the aluminum layers 112 and 122 are formed by a non-plating process such as vacuum deposition or sputtering, the plating process, which is sensitive to the surrounding environment and can be difficult to manage, can be removed from the manufacturing process. The process is simplified and the quality is kept uniform.
In addition, an aluminum (Al) coating prevention layer is formed on the lower surface of the base substrate before the forming of the aluminum (Al) layer, so that the aluminum (Al) layer is the first and second lead frames (110, 120) The light emitting
In addition, an anti-oxidation layer (not shown) may be formed on the aluminum (Al) layer to prevent damage to the aluminum (Al) layer. The antioxidant layer may be formed by UV coating, but is not limited thereto.
A distributed Bragg reflector (DBR) 113, 123 is formed on an upper surface of the aluminum (Al) layer.
As illustrated in FIG. 3, the distributed Bragg
The dispersed Bragg reflector layers 113 and 123 include a first
Specifically, the first refractive film 140a is formed of Ta 2 O 5 (refractive index: about 1.8), Material of any one of ITO (refractive index: about 2.0), TiO 2 (refractive index: about 2.3), ZrO 2 (refractive index: about 2.05), Si 3 N 4 (refractive index: about 2.02), and Refractive film 140b is SiO 2 (Refractive index: about 1.46), Al 2 O 3 (refractive index: about 1.68), MgO (refractive index: about 1.7) may include a material.
Meanwhile, the distributed Bragg reflector layers 113 and 123 may be formed to have a structure having high reflectance for a specific wavelength region. That is, the wavelength region corresponding to the wavelength light converted by the phosphor included in the
The distributed Bragg reflector layers 113 and 123 may be limitedly formed only in the exposed regions 110a and 120a of the
In addition, a part of the distributed Bragg reflector layers 113 and 123 is removed from the distributed Bragg reflector layers 113 and 123 to electrically connect the
Next, the
As shown in FIGS. 1 and 2, the
The
As described above, the first and second lead frames 110 and 120 may include the
The light emitting
The growth substrate may be sapphire, but is not limited thereto. For example, a known growth substrate such as spinel, SiC, GaN, GaAs, or the like may be used. Specifically, the light emitting
An electrode (not shown) formed on an upper surface of the
The
As described above, the light emitting
Next, the lead frames 110 and 120 and the manufacturing method of the
The method of manufacturing the lead frames 110 and 120 may include forming a base substrate, forming an aluminum (Al) layer on the base substrate, and forming a dispersed Bragg reflector layer on the aluminum (Al) layer. Include.
First, as shown in FIGS. 4 and 5A, the raw material substrate C including the metal is patterned to form the exposed
Next, as shown in FIG. 6, aluminum (Al) layers 112 and 122 are formed on the exposed
Next, as shown in FIG. 7, the distributed Bragg reflector layers 113 and 123 are formed on the aluminum (Al) layers 112 and 122. In this case, when the dispersed Bragg reflector layers 113 and 123 are formed only on the exposed
Contact points 114 and 124 are formed on the distributed Bragg reflector layers 113 and 123 to bond the light emitting
Next, a method of manufacturing the light emitting
First, as shown in FIG. 8, the
Next, as shown in FIG. 9, a light emitting
100: light emitting diode package 110: first lead frame
110a, 120a: exposed area 110b, 120b: buried area
111, 121:
113 and 123: distributed Bragg reflector layer 120: second lead frame
122a: first refractive film 122b: second refractive film
114 and 124: contact portion 130: package body
140: light emitting diode chip 150: wavelength conversion unit
W: Wire Bonding C: Raw Material Substrate
Claims (22)
A second lead frame separated from the first lead frame;
An aluminum (Al) layer formed on at least one side of the first and second lead frames;
And a distributed Bragg reflector layer formed on an upper surface of the aluminum (Al) layer and formed by alternately stacking first and second refractive films having different refractive indices.
The aluminum (Al) layer is formed on the surface of the first and second lead frame by vacuum deposition.
The first and the second refractive film is a lead frame, characterized in that each made of a light transmitting material.
The first refractive film is a lead frame, characterized in that containing any one material of Ta 2 O 5 , ITO, TiO 2 , ZrO 2 and Si 3 N 4 .
The second refractive film is SiO 2 , Al 2 O 3 And a material of any one of MgO.
The distributed Bragg reflector layer is formed in a region where the LED chip of the first lead frame is to be mounted.
The distributed Bragg reflector layer is a lead frame, characterized in that the connection portion to be electrically connected to the light emitting diode chip is mounted.
And the connection part is a groove part formed to expose the aluminum (Al) layer on a bottom surface of the dispersion Bragg reflector layer.
A light emitting diode chip mounted on the package body and electrically connected to the lead frame;
The lead frame,
A first lead frame having a region in which the LED chip is to be mounted;
A second lead frame separated from the first lead frame;
An aluminum (Al) layer formed on at least one side of the first and second lead frames; And
And a distributed Bragg reflector layer formed on an upper surface of the aluminum (Al) layer and formed by alternately stacking first and second refractive films having different refractive indices.
The aluminum (Al) layer is formed on the surface of the first and second lead frame by vacuum deposition, the light emitting diode package.
The first and the second refractive film constituting the dispersed Bragg reflector layer is a light emitting diode package, characterized in that each made of a light transmitting material.
The package body has a recess in which the first and second lead frames are exposed,
The distributed Bragg reflector layer is formed on the upper surface of the first and second lead frame exposed to the recess portion.
The distributed Bragg reflector layer is a light emitting diode package, characterized in that the connection portion is formed to be electrically connected to the light emitting diode chip is mounted.
The connection part is a light emitting diode package, characterized in that the groove portion formed to expose the aluminum (Al) layer on the bottom surface of the dispersion Bragg reflector layer.
Forming an aluminum (Al) layer on at least one side of the first and second lead frames;
And alternately stacking first and second refractive films having different refractive indices on the aluminum (Al) layer to form a distributed Bragg reflector layer.
The forming of the aluminum (Al) layer is a method of manufacturing a lead frame, characterized in that the vacuum deposition of aluminum (Al) on the surface of the first and second lead frame.
And forming an aluminum (Al) coating prevention layer on one side of the first and second lead frames before forming the aluminum (Al) layer.
The aluminum (Al) coating prevention layer is a lead frame manufacturing method characterized in that the ultraviolet (UV) photosensitive film.
And forming an anti-oxidation layer on the aluminum (Al) layer before forming the dispersed Bragg reflector layer.
The package body has a recess in which the first and second lead frames are exposed,
The dispersion Bragg reflector layer is formed on the upper surface of the first and second lead frame exposed to the recess portion.
The distributed Bragg reflector layer is a lead frame manufacturing method characterized in that the connection portion to be electrically connected to the light emitting diode chip is mounted.
And the connection part is a groove part formed to expose the aluminum (Al) layer on a bottom surface of the dispersion Bragg reflector layer.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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KR1020110116249A KR20130051095A (en) | 2011-11-09 | 2011-11-09 | Lead frame, manufacturing method the same and light emitting diode using the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020110116249A KR20130051095A (en) | 2011-11-09 | 2011-11-09 | Lead frame, manufacturing method the same and light emitting diode using the same |
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Publication Number | Publication Date |
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KR20130051095A true KR20130051095A (en) | 2013-05-20 |
Family
ID=48661189
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1020110116249A KR20130051095A (en) | 2011-11-09 | 2011-11-09 | Lead frame, manufacturing method the same and light emitting diode using the same |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9202990B2 (en) | 2014-02-04 | 2015-12-01 | Samsung Display Co., Ltd. | Light emitting diode package and backlight unit including the same |
-
2011
- 2011-11-09 KR KR1020110116249A patent/KR20130051095A/en not_active Application Discontinuation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9202990B2 (en) | 2014-02-04 | 2015-12-01 | Samsung Display Co., Ltd. | Light emitting diode package and backlight unit including the same |
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