KR20120134405A - Method for manufacturing fluorocarbon film - Google Patents

Method for manufacturing fluorocarbon film Download PDF

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Publication number
KR20120134405A
KR20120134405A KR1020110053275A KR20110053275A KR20120134405A KR 20120134405 A KR20120134405 A KR 20120134405A KR 1020110053275 A KR1020110053275 A KR 1020110053275A KR 20110053275 A KR20110053275 A KR 20110053275A KR 20120134405 A KR20120134405 A KR 20120134405A
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KR
South Korea
Prior art keywords
thin film
ptfe
pulsed
fluorocarbon thin
fluorocarbon
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KR1020110053275A
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Korean (ko)
Inventor
김태원
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삼성코닝정밀소재 주식회사
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Priority to KR1020110053275A priority Critical patent/KR20120134405A/en
Publication of KR20120134405A publication Critical patent/KR20120134405A/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3485—Sputtering using pulsed power to the target

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

The present invention relates to a fluorocarbon thin film manufacturing method, and more particularly to a fluorocarbon thin film manufacturing method for producing a fluorocarbon thin film by applying a pulsed RF power source to the target.
To this end, the present invention is a method for manufacturing a fluorocarbon thin film by a high frequency sputtering deposition method, comprising the steps of disposing a PTFE target, injecting a process gas into the chamber, and pulsed RF (Radio Frequency) to the PTFE target Providing a method for producing a fluorocarbon thin film comprising the step of forming a fluorocarbon thin film on the substrate by applying power, to produce a fluorocarbon thin film having properties similar to PTFE, that is, improved hydrophobicity and oleophobicity have.

Description

Fluorocarbon thin film manufacturing method {METHOD FOR MANUFACTURING FLUOROCARBON FILM}

The present invention relates to a fluorocarbon thin film manufacturing method, and more particularly to a fluorocarbon thin film manufacturing method for producing a fluorocarbon thin film by applying a pulsed RF power source to the target.

PTFE (Polytetrafluoroethylene) is known under the trade name Teflon, a material with low surface energy and is also known for its hydrophobic properties. Many methods are used to impart the properties of PTFE to the surface of an object, that is, to deposit a thin film having bulk PTFE properties. Among them, PECVD (Plasma Enhanced Chemical Vapor Deposition) is well known. . However, PECVD has a disadvantage in that toxic and expensive perfluorocarbon gases (CF 4 , C 4 F 8 , C 6 F 6 , and C 5 F 8 ) must be used.

In order to solve this problem, a method of manufacturing a fluorocarbon thin film by a sputtering deposition method using a PTFE polymer in the form of a bulk polymer has been proposed. PTFE targets are very inexpensive, and sputtering deposition is suitable for large-scale mass production, has good uniformity and good adhesion between the deposited film and the substrate. Particularly, the PTFE target is superior to other polymers. This is because the deposition rate is high, so that it is more suitable for the sputtering deposition method.

However, the fluorocarbon thin film produced by such a conventional sputtering deposition method has a problem in that the properties of PTFE are different from those of the bulk PTFE in that they do not exhibit the properties of PTFE well.

The present invention has been made to solve the problems of the prior art as described above, it is an object of the present invention to provide a method for producing a fluorocarbon thin film having properties similar to PTFE by the sputtering deposition method.

To this end, the present invention is a method for producing a fluorocarbon thin film by a high frequency sputtering deposition method, comprising the steps of: placing a PTFE target; Injecting a process gas into the chamber; And applying a pulsed RF (Radio Frequency) power source to the PTFE target to form a fluorocarbon thin film on a substrate.

Here, the pulsed RF power source may have a duty cycle of 10% or less.

In addition, the pulsed RF power source may be a pulsed RF power source of 13.56 MHz.

In addition, the pulsed RF power supply, RF power supply for supplying RF power; And

It may be applied by a pulse generator that pulses the RF power supplied by the RF power supply.

According to the present invention, it is possible to produce a fluorocarbon thin film having properties similar to PTFE, that is, improved hydrophobicity and oleophobicity.

In addition, the fluorocarbon thin film according to the present invention has improved chemical resistance and aging than the fluorocarbon thin film produced by an unpulsed power source.

1 is a schematic flowchart of a method of manufacturing a fluorocarbon thin film according to an embodiment of the present invention.
Figure 2 is a schematic diagram of a high frequency sputtering apparatus for producing a fluorocarbon thin film according to an embodiment of the present invention.
3 shows a comparison of a typical continuous RF power waveform with a pulsed RF power waveform.

Hereinafter, a method for manufacturing a fluorocarbon thin film according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings.

In the following description of the present invention, detailed description of known functions and configurations incorporated herein will be omitted when it may make the subject matter of the present invention rather unclear.

1 is a schematic flowchart of a fluorocarbon thin film manufacturing method according to an embodiment of the present invention, Figure 2 is a schematic configuration diagram of a high frequency sputtering apparatus for manufacturing a fluorocarbon thin film according to an embodiment of the present invention.

1 and 2, according to the present invention, a method of manufacturing a fluorocarbon thin film using a high frequency sputtering deposition method includes: placing a PTFE target; Injecting a process gas; And applying a pulsed RF (Radio Frequency) power source to the PTFE target to form a fluorocarbon thin film on the substrate.

The high frequency sputtering deposition method obtains plasma by an AC power supply rather than a direct current (DC) power supply. In the case of a non-conductive target, when a direct current power supply is used, charges are accumulated on the surface of the substrate, and thus sputtering is impossible. How to use.

 The high frequency sputtering deposition method discharges between a pair of RF (Radio Frequency) electrodes, sputters a metal film from the target surface, and ionizes metal particles protruding from the target through RF through a high plasma density region inside the chamber. , A method of growing a thin film through a process of forming a thin film on the substrate. The high frequency sputtering deposition method has an advantage of obtaining excellent adhesion and a dense structure by applying a bias voltage to a substrate.

Accordingly, in the present invention, in order to manufacture a fluorocarbon thin film by a high frequency sputtering deposition method, a PTFE target 200 is first placed in a chamber 100 of a high frequency sputtering apparatus. The PTFE target 200 is disposed above the inside of the chamber 100, and the substrate 300 is positioned below the inside of the chamber 100 facing the PTFE target 200.

The PTFE target 200 is very inexpensive, and in particular, the PTFE target has a higher deposition rate than other polymers and is suitable for sputter deposition.

Thereafter, the process gas is injected through the gas supply unit 400 of the sputtering apparatus. As the process gas, argon (Ar) gas or the like may be generally used.

Thereafter, the pulsed RF (Radio Frequency) power is applied to the PTFE target 200 through the power supply unit 500.

3 is a comparison of a typical continuous RF power waveform and the pulsed RF power waveform.

The pulsed RF power applied by the power supply unit 500 may be generated by connecting a pulse generator to the RF power supply.

Here, the pulsed RF power source may be a pulsed RF power source having a frequency of 13.56 MHz.

When the pulsed RF power is applied to the PTFE target 200, the process gas is ionized by glow discharge to generate a plasma discharge between the PTFE target 200 and the substrate 300. Positive charges present in the discharge region strike the surface of the PTFE target 200 by the electric force. At this price, atoms or molecules separated from the PTFE target 200 are deposited on the substrate 300 disposed opposite to the PTFE target, thereby forming a fluorocarbon thin film having properties similar to those of PTFE.

As such, some of the cations in the plasma are applied during the deposition process by applying a pulsed RF power source, i.e., giving off power to the power source, thereby causing an electrical force resulting from the potential difference between the plasma potential and the substrate potential. By reducing the bambarding phenomena (300), the amount of fluorine ions extracted from the deposited film can be reduced to produce a fluorocarbon thin film having a similar F / C ratio to PTFE. will be.

How similar to PTFE is based on the content ratio (F / C) of fluorine and carbon, known as "Teflon Character", and PTFE polymer (F / C) is 2. Therefore, the closer the F / C ratio of the deposited film is to 2, the closer to PTFE.

Thus, the present invention will set the duty cycle (pulse cycle) of the pulsed RF power supply to 10% or less to produce a fluorocarbon thin film close to the F / C ratio of 2. In other words, by controlling the ratio of On-time per cycle to 10% or less, a fluorocarbon thin film having properties similar to PTFE will be manufactured.

The ratio of fluorine to carbon (F / C) of the deposited film is generally known through X-ray photoelectron spectroscopy (XPS) analysis.

In this way, by producing a thin carbon fluoro thin film by sputtering deposition method using a pulsed RF power supply, it is possible to produce a thin fluoro carbide thin film having properties similar to PTFE, that is, improved hydrophobicity and oleophobicity.

In addition, the fluorine carbide thin film deposited by the non-pulsed RF power (Continuous Power) has the effect of improving the chemical resistance and the aging (Aging) phenomenon when exposed to the atmosphere.

While the invention has been shown and described with reference to certain preferred embodiments thereof, it will be understood by those of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims. This is possible.

Therefore, the scope of the present invention should not be limited by the described embodiments, but should be determined by the scope of the appended claims as well as the appended claims.

100 chamber 200 PTFE target
300: substrate 400: gas supply unit
500: power supply

Claims (4)

In the method for producing a fluorocarbon thin film by a high frequency sputtering deposition method,
Placing a PTFE target;
Injecting a process gas into the chamber; And
And forming a fluorocarbon thin film on a substrate by applying pulsed RF (Radio Frequency) power to the PTFE target.
The method of claim 1,
The pulsed RF power source has a duty cycle (Duty Cycle) of less than 10%, characterized in that the fluorocarbon thin film manufacturing method.
The method of claim 1,
Wherein said pulsed RF power supply is a pulsed RF power supply of 13.56 MHz.
The method of claim 1,
The pulsed RF power supply,
An RF power supply for supplying RF power; And
The fluorocarbon thin film manufacturing method, characterized in that applied by the pulse generator for pulsing the RF power supplied by the RF power supply.
KR1020110053275A 2011-06-02 2011-06-02 Method for manufacturing fluorocarbon film KR20120134405A (en)

Priority Applications (1)

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KR1020110053275A KR20120134405A (en) 2011-06-02 2011-06-02 Method for manufacturing fluorocarbon film

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Application Number Priority Date Filing Date Title
KR1020110053275A KR20120134405A (en) 2011-06-02 2011-06-02 Method for manufacturing fluorocarbon film

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KR20120134405A true KR20120134405A (en) 2012-12-12

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