KR20120133062A - Quantum Dot Film and Fabrication Method thereof - Google Patents

Quantum Dot Film and Fabrication Method thereof Download PDF

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Publication number
KR20120133062A
KR20120133062A KR1020110051554A KR20110051554A KR20120133062A KR 20120133062 A KR20120133062 A KR 20120133062A KR 1020110051554 A KR1020110051554 A KR 1020110051554A KR 20110051554 A KR20110051554 A KR 20110051554A KR 20120133062 A KR20120133062 A KR 20120133062A
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KR
South Korea
Prior art keywords
transparent substrate
quantum dot
light
conversion layer
dot film
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Application number
KR1020110051554A
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Korean (ko)
Inventor
송진원
김선태
Original Assignee
주식회사 큐디솔루션
한밭대학교 산학협력단
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Application filed by 주식회사 큐디솔루션, 한밭대학교 산학협력단 filed Critical 주식회사 큐디솔루션
Priority to KR1020110051554A priority Critical patent/KR20120133062A/en
Publication of KR20120133062A publication Critical patent/KR20120133062A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements

Abstract

PURPOSE: A quantum dot film and a manufacturing method thereof are provided to freely convert and output wavelength of incident light by forming a light conversion layer including a quantum dot inside a transparent substrate. CONSTITUTION: A first transparent substrate(10) is formed with a material having transparency. A light conversion layer(20) is formed on the top surface of the first transparent substrate. The light conversion layer comprises a quantum dot. The light conversion layer converts light which enters the first transparent substrate into light of a predetermined wavelength. A second transparent substrate(30) is laminated on the top surface of the light conversion layer.

Description

Quantum Dot Film and Fabrication Method

The present invention relates to a quantum dot film and a method of manufacturing the same. More specifically, the present invention relates to a quantum dot film and a method for manufacturing the same, which can convert a wavelength of incident light by forming a light conversion layer including a quantum dot in a transparent substrate and output the incident light.

In general, light emitting diodes (LEDs) are characterized in that light from other light emitting elements, for example, incandescent bulbs, emits light that is nearly monochromatic, unlike a broad emission spectrum. Since the energy of each of the LEDs differs depending on the electron / hole coupling, the LEDs are red, green, blue, orange, or yellow according to their characteristics.

Recently, LEDs that display white light or that can implement multiple colors have been developed. Among these methods, a white LED is manufactured by combining LED chips of various colors to display white color, or combining LED chips emitting light of a specific color and phosphors emitting fluorescent light of a specific color. In general, the latter method is commercialized.

For example, a white LED package can be obtained by sealing a blue LED chip with a molding resin in which yellow phosphors are dispersed. When light of 460 nm wavelength is generated from the blue LED chip, light of 545 nm wavelength is generated from the yellow phosphor absorbing the light, and two lights having different wavelengths are mixed to output white light. Therefore, light of a desired color can be obtained by combining various kinds of phosphors.

However, such a conventional technique can obtain a desired color by using a phosphor, but since the light source (LED) is sealed by molding a molding resin in which the phosphor is dispersed, it is difficult to reduce the thickness and the luminous efficiency of the LED is also lowered. .

SUMMARY OF THE INVENTION The present invention has been made in view of solving the above-described problems, and provides a quantum dot film in which light having a predetermined wavelength is generated using a wavelength of incident light using quantum dots.

In addition, it is another technical problem to provide a method of manufacturing a quantum dot film in connection with the technical problem.

However, the technical problem of the present invention is not limited to the above-mentioned matters, and other objects not mentioned will be clearly understood by those skilled in the art from the following description.

In order to achieve the above technical problem, the quantum dot film according to the present invention is formed on a first transparent substrate and an upper surface of the first transparent substrate, and the wavelength of light incident on the first transparent substrate is a light having a predetermined wavelength. And a second transparent substrate laminated on the upper surface of the light conversion layer including a quantum dot to convert to the light conversion layer.

At least one of the first transparent substrate and the second transparent substrate may be formed of a thermoplastic resin or a UV curable resin.

In addition, the first transparent substrate, the light conversion layer, and the second transparent substrate may each be laminated by an encapsulant layer.

Meanwhile, in order to achieve the above technical problem, a method of manufacturing a quantum dot film according to the present invention includes the steps of (a) preparing a first transparent substrate, and (b) a light conversion layer including a quantum dot in the first transparent substrate. Forming and (c) laminating a second transparent substrate on the light conversion layer.

Here, the step (b) is preferably formed by applying the solution containing the quantum dots to the first transparent substrate to form a thin film, wherein the thin film is more preferably formed by applying a spin coating method to the first transparent substrate. Do.

In addition, preferably, after the step (c) (d) it may be further comprising the step of cutting the quantum dot film to form a plurality of pieces.

According to this invention grasped | ascertained from the description of this specification, since the quantum dot film in which the light conversion layer containing a quantum dot is formed is used, thickness reduction can be achieved.

Further, according to the present invention, the wavelength of the incident light can be freely converted by changing the size of the quantum dots.

In addition, according to the present invention, since a quantum dot film can be produced by cutting a large quantum dot film and then producing a large quantity of quantum dot film at low cost.

1 is a view for explaining a quantum dot film according to an embodiment of the present invention,
2 is a view for explaining a quantum dot film according to another embodiment of the present invention,
3 is a flowchart illustrating a method of manufacturing a quantum dot film according to one embodiment of the present invention and another embodiment.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the description herein, when a component is described as being connected to another component, this means that the component may be directly connected to another component or an intervening third component may be interposed therebetween. In the drawings, the same reference numerals are used to designate the same or similar components throughout the drawings. At this time, the configuration and operation of the present invention shown in the drawings and described by it will be described as at least one embodiment, by which the technical spirit of the present invention and its core configuration and operation is not limited.

1 is a view for explaining a quantum dot film according to an embodiment of the present invention.

As illustrated in FIG. 1, the quantum dot film 100 according to an embodiment includes a first transparent substrate 10, a light conversion layer 20, and a second transparent substrate 30.

The first transparent substrate 10 is formed of a material having transparency on the basis on which the light conversion layer 20 to be described later is formed. Therefore, there is no limitation to the material of the first transparent base material 10.

However, when the first transparent substrate 10 is provided with a thermoplastic resin or a UV curable resin, it is possible to laminate the light conversion layer 20 by pressing or heat treatment or UV irradiation without a separate adhesive or encapsulant layer.

The light conversion layer 20 is formed on the upper surface of the above-described first transparent substrate 10 and includes a quantum dot (not shown) and exists in a thin film form on the upper surface of the first transparent substrate 10. The light conversion layer 20 converts light incident on the first transparent substrate 10 into light having a predetermined wavelength to generate wavelength converted light. Here, the predetermined wavelength means the wavelength of the light to be finally output through the quantum dot film 100, which is achieved by adjusting the size of the quantum dot. Details regarding wavelength conversion according to the size of the quantum dot will be described later.

Since the wavelength conversion function by the light conversion layer 20 is achieved by the quantum dots included in the light conversion layer 20, the quantum dots will be described in more detail here.

A quantum dot is a material having a crystal structure of several nano-sizes, and has a quantum confinement effect. Quantum dots generate light that is stronger than conventional phosphors in a narrow wavelength band. This luminescence of quantum dots is generated by the transition of electrons excited in the valence band in the conduction band, and even in the same material, the wavelength varies depending on the particle size. When the size of the quantum dot is adjusted, the incident light can be output by converting the wavelength. As the size (diameter) of the quantum dot is smaller, light of shorter wavelength is emitted, and as the size of the quantum dot is larger, light of a longer wavelength is emitted.

The second transparent substrate 30 may be formed of the same material as the first transparent substrate 10 described above and stacked on the upper surface of the light conversion layer 20 described above. When the second transparent substrate 20 is formed of a thermoplastic resin or a UV curable resin, the first transparent substrate 20 may be laminated with the light conversion layer 20 by pressing, heat treatment, or UV irradiation without a separate adhesive or encapsulant layer. The same as described for the transparent substrate 10.

As such, the quantum dot film 100 according to the exemplary embodiment has a film-shaped structure in which the first transparent substrate 10 and the second transparent substrate 30 are pressed and laminated on the light conversion layer 20 for converting the optical wavelength. To form. The reason for taking such a structure is that the quantum dots included in the conversion layer 20 are damaged when they come in contact with oxygen, moisture, etc., and thus the lifespan is reduced than the original life expectancy. 2 is due to the sealing to the transparent substrate 30 to prevent the shortening of the life of the light conversion layer (20).

A case in which white light is output using a blue LED as a light source by the quantum dot film 100 according to the above-described embodiment will be described. When light of 460nm wavelength band is generated from the blue LED, the light conversion layer 20 of the quantum dot film 100 absorbs the light to generate light of 545nm wavelength band. Therefore, two lights having different wavelengths are mixed to finally output white light.

Hereinafter, a description of the quantum dot film according to another embodiment of the present invention.

2 is a view for explaining a quantum dot film according to another embodiment of the present invention.

As shown in FIG. 2, the quantum dot film 100 according to another embodiment may include the first transparent substrate 10, the light conversion layer 20, the second transparent substrate 30, and the encapsulant layers 15 and 25. Include. The first transparent substrate 10, the light conversion layer 20, and the second transparent substrate 30 have been described in detail through one embodiment, and in the embodiments herein, these are the same as those in the embodiment. Description is omitted.

In another embodiment, the quantum dot film 100 is characterized in that it includes an encapsulant layer (15, 25). That is, the encapsulant layers 15 and 25 are provided between the first transparent substrate 10 and the light conversion layer 20, and between the light conversion layer 20 and the second transparent substrate 30, respectively. The encapsulant layers 15 and 25 are layers formed of an encapsulant, that is, an encapsulant composed of epoxy, silicone, acrylic polymer, glass, carbonate polymer, and mixtures thereof. The encapsulant layers 15 and 25 are made of a transparent material so that light incident on the first transparent substrate 10 is not affected by the light conversion layer 20 being converted and output through the second transparent substrate 30. It is preferable. Thus, for example, OCA (Optical Coherence Adhesive) can be used.

When the encapsulant layers 15 and 25 are used, the first transparent substrate 10 and the second transparent substrate 30 can be laminated with the light conversion layer 20 without being formed of a thermoplastic resin or a UV curable resin. . Alternatively, when only the first transparent substrate 10 of the first transparent substrate 10 and the second transparent substrate 30 is a thermoplastic resin or a UV curable resin, only between the second transparent substrate 30 and the light conversion layer 20. The encapsulant layer 25 may be formed, and the encapsulant layer 15 between the first transparent substrate 10 and the light conversion layer 20 may be omitted. Similarly, when only the second transparent substrate 30 is a thermoplastic resin or a UV curable resin, the encapsulant layer 15 may be used, but the encapsulant layer 25 may be omitted.

Hereinafter will be described a method of manufacturing a quantum dot film according to an embodiment of the present invention and another embodiment.

3 is a flowchart illustrating a method of manufacturing a quantum dot film according to one embodiment of the present invention and another embodiment.

As shown in FIG. 3, the method of manufacturing a quantum dot film includes preparing a first transparent substrate (S10), forming a quantum dot thin film by applying a solution including a quantum dot to the first transparent substrate (S20), and a thin film. And laminating a second transparent substrate (S30), and obtaining a slice by cutting the quantum dot film (S40).

Step S10 is a step of preparing a first transparent substrate, the description of the first transparent substrate is replaced with the above-described.

Step S20 is a step of applying a quantum dot solution to the first transparent substrate prepared in step S10. Here, the quantum dot solution is a solution containing the quantum dots, and means a solution formed by dispersing the quantum dots in a dispersion medium. The dispersion medium herein may also be a resin such as epoxy resin or silicone. Therefore, it should be noted that the same or similar material as the encapsulant layer described above.

In step S20, the quantum dot solution should be applied to the first transparent substrate, but the quantum dot solution should be able to form a thin film on the upper surface of the first transparent substrate. To this end, a spin coating method may be typically used as a method of applying the quantum dot solution to the first transparent substrate. However, spin-coating may not be the only method for forming a thin film, and the known sol-gel reaction method, dip-coating method, and metal-organic chemical vapor deposition method ( MOCVD, Metal-Organic Chemical Vapor Deposition) may be used. Descriptions of these known techniques are omitted for simplicity of specification.

Step S30 is a step of laminating the second transparent substrate to the thin film. Since the description of the second transparent substrate has been described above, the description thereof will be omitted. In addition, when the second transparent substrate is provided with a thermoplastic resin, the encapsulant layer may be omitted between the thin film and the second transparent substrate.

Step S40 is a step of obtaining a quantum dot film of small fragments by cutting the quantum dot film manufactured up to step S30. That is, in step S10 to step S40 to form a large area of the first transparent substrate, a thin film (same as the above-described light conversion layer), the second transparent substrate, and cut the quantum dot film thus prepared to obtain a plurality of quantum dot film do.

As described above, the present invention has been described by way of limited embodiments and drawings, but the present invention is not limited to the above-described embodiments, which can be variously modified and modified by those skilled in the art to which the present invention pertains. Modifications are possible. Accordingly, it is intended that the scope of the invention be defined solely by the claims appended hereto, and that all equivalents or equivalent variations thereof fall within the spirit and scope of the invention.

10: first transparent substrate 20: light conversion layer
30: second transparent substrate 15, 25: encapsulant layer
100: quantum dot film

Claims (7)

A first transparent substrate;
A light conversion layer formed on the first transparent substrate and including a quantum dot converting a wavelength of light incident on the first transparent substrate into light having a predetermined wavelength; And
A quantum dot film comprising a second transparent substrate laminated on the light conversion layer. The method of claim 1,
At least one of the first transparent substrate and the second transparent substrate is a quantum dot film, characterized in that formed of a thermoplastic resin or UV curable resin. The method of claim 1,
The first transparent substrate, the light conversion layer and the second transparent substrate is a quantum dot film, characterized in that each laminated by an encapsulant layer. (a) preparing a first transparent substrate;
(b) forming a light conversion layer including a quantum dot on the first transparent substrate; And
(C) a method of manufacturing a quantum dot film comprising the step of laminating a second transparent substrate on the light conversion layer. The method of claim 4, wherein step (b)
Method for producing a quantum dot film, characterized in that to form a thin film by applying a solution containing the quantum dot on the first transparent substrate. The method of claim 5, wherein the thin film
Method for producing a quantum dot film, characterized in that formed by applying a spin coating method on the first transparent substrate. The method of claim 5, wherein after step (c)
(d) cutting the quantum dot film to form a plurality of pieces, the method of manufacturing a quantum dot film, characterized in that it further comprises.
KR1020110051554A 2011-05-30 2011-05-30 Quantum Dot Film and Fabrication Method thereof KR20120133062A (en)

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104777669A (en) * 2015-04-24 2015-07-15 张家港康得新光电材料有限公司 Quantum dot film and backlight module
US20160061417A1 (en) * 2014-08-26 2016-03-03 Samsung Display Co., Ltd. Quantum dot sheet and light unit and liquid crystal display including the same
US9316777B2 (en) 2013-11-08 2016-04-19 Samsung Display Co., Ltd. Backlight assembly and display apparatus having the same
CN105891922A (en) * 2016-06-08 2016-08-24 汕头万顺包装材料股份有限公司 Quantum dot film product and producing method thereof
US9664828B2 (en) 2014-04-08 2017-05-30 Samsung Display Co., Ltd. Quantum dot sheet, and light unit and liquid crystal display including the same
US10249689B2 (en) 2016-06-29 2019-04-02 Samsung Display Co., Ltd. Color-conversion panel, method of manufacturing the panel, and display device including the panel
US10488709B2 (en) 2014-06-25 2019-11-26 Samsung Display Co., Ltd. Fluorescent sheet and light unit and liquid crystal display including the same

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9316777B2 (en) 2013-11-08 2016-04-19 Samsung Display Co., Ltd. Backlight assembly and display apparatus having the same
US9664828B2 (en) 2014-04-08 2017-05-30 Samsung Display Co., Ltd. Quantum dot sheet, and light unit and liquid crystal display including the same
US10488709B2 (en) 2014-06-25 2019-11-26 Samsung Display Co., Ltd. Fluorescent sheet and light unit and liquid crystal display including the same
US20160061417A1 (en) * 2014-08-26 2016-03-03 Samsung Display Co., Ltd. Quantum dot sheet and light unit and liquid crystal display including the same
US9581759B2 (en) 2014-08-26 2017-02-28 Samsung Display Co., Ltd. Quantum dot sheet and light unit and liquid crystal display including the same
CN104777669A (en) * 2015-04-24 2015-07-15 张家港康得新光电材料有限公司 Quantum dot film and backlight module
CN104777669B (en) * 2015-04-24 2017-09-12 张家港康得新光电材料有限公司 Quantum dot film and backlight module
CN105891922A (en) * 2016-06-08 2016-08-24 汕头万顺包装材料股份有限公司 Quantum dot film product and producing method thereof
CN105891922B (en) * 2016-06-08 2018-06-26 汕头万顺包装材料股份有限公司 Quantum dot membrane product and preparation method thereof
US10249689B2 (en) 2016-06-29 2019-04-02 Samsung Display Co., Ltd. Color-conversion panel, method of manufacturing the panel, and display device including the panel

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